1. wafer clean 2. thermal oxidation 3. pr coating and patterning, mask #1 4. wet boe etching sio2...

1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist become negative PR coating and patterning, Mask#2 6. E-beam evaporation Cr/Ni Lift-off process 7. Double side alignment and Dry etching on back side, Mask#B 8. PR coating and patterning , Mask#3 Nickel etching and PR stripping 10. Thick PR coating and patterning, Mask#4 11. Nickel electroplating Thick PR stripping, Cr etching, an wafer dicing. 12. TMAH bulk etching 13. Anodic bonding process Process flow Process flow

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1. Wafer clean 2. Thermal oxidation

3. PR coating and patterning, Mask #1

4. Wet BOE etching SiO2 Dry RIE etching low stress nitride

5. Positive resist become negative PR coating and patterning, Mask#2

6. E-beam evaporation Cr/Ni

Lift-off process

7. Double side alignment and Dry etching on back side, Mask#B

8. PR coating and patterning , Mask#3

Nickel etching and PR stripping

10. Thick PR coating and patterning, Mask#4

11. Nickel electroplating

Thick PR stripping, Cr etching, and wafer dicing.

12. TMAH bulk etching

13. Anodic bonding process

Process flowProcess flow

Page 2: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

Overview of the MEMS DevicesOverview of the MEMS Devices

Page 3: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

對準記號 (Alignment Mark)

First Mask

2nd Mask

Back Side

3rd Mask

4th Mask

Page 4: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

對準精度以及微影精度Alignment Resolution and Lithography Resolution

Alignment Resolution

Lithography Resolution

400um

40um

Page 5: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

Flow Channel 1

Channel width:160um

Flow Channel 2

Page 6: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

微流體結構Flow Channel 3

Flow Channel 4

210um

200um

130um

200um

Page 7: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

Flow Filter

120um

200um

Page 8: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

•Main square area length: 300 micrometer•Corner width: 60 micrometer; length: 80, 160, 280, 360 micrometer

•Main square area length: 300 micrometer•Corner area width: 80, 120, 160, 240 micrometer

•Main square area length: 212 micrometer, diagonal length: 300 micrometer.•Corner width: 40 micrometer; length: 80, 150, 200, 260 micrometer

•Main square area length: 212 micrometer, diagonal length: 300 micrometer.•Corner area horizontal length: 80, 180, 240, 280 micrometer.

Corner Compensation 1 Corner Compensation 2

Corner Compensation 3 Corner Compensation 4

角落補償

Page 9: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

溼度感測器Humidity sensor 1

Humidity sensor 2

Humidity sensor 3

Humidity sensor 4

Gap = 10um

Gap= 20um

Gap=5um

Wall=20um

Wall=30um

Wall= 20um

Page 10: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

溫度感測器及熱致動器

Temperature sensor Thermal Actuator 1 Thermal Actuator 2

Gap:45um

Beam width:110um

Gap:100um

Beam Width:100um

Metal line width:20um Metal line width:20um

Metal line width:20um

Page 11: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

Flow Sensor 1 Flow Sensor 2

Metal line width:40um

Gap:20um

Metal line width:40um

Width:25um

Gap:150um

Width:200um

Page 12: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

懸臂樑

•Beam width: 20; •Length: 40, 80, 120, 160, 200 micrometer•Space between each beam: 20 micrometer.

•Beam width:50; •Length: 40, 80, 120, 160, 200 micrometer•Space between each beam: 50 micrometer.

Page 13: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

•Mass area: 500 micrometer. (Width)•Open space: 300 micrometer•Support beam width: 20 micrometer; •Support beam length: 350 micrometer.

Accelerometer 1

加速規

Accelerometer 2

•Mass area: 1000 micrometer. (Width)•Open space: 350 micrometer•Support beam width: 20 micrometer; •Support beam length: 300 micrometer.

Accelerometer 3

•Mass area: 1000 micrometer. (Width)•Open space: 350 micrometer•Support beam width: 20 micrometer; •Support beam length: 350 micrometer.

Page 14: 1. Wafer clean 2. Thermal oxidation 3. PR coating and patterning, Mask #1 4. Wet BOE etching SiO2 Dry RIE etching low stress nitride 5. Positive resist

壓力計

Pressure sensor 1Beam Width=20 umBack Side Open Window=1080um x 1080um

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