1231231231231saxf asdf asdf.pdf

Post on 08-Jul-2018

222 views

Category:

Documents


0 download

TRANSCRIPT

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    1/94

    Tamkang University, VLSI Lab.

    Fundamentals of

    Microelectronics—Bipolar Amplifier

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    2/94

    Electronics 5-2Tamkang University

    Bipolar Amplifiers

    5.1 General Considerations5.2 Operating Point Analysis and Design5.3 Bipolar Amplifier Topologies5.4 Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    3/94

    Electronics 5-3Tamkang University

    5.1 General Considerations

    Voltage amplifiersVoltage gain: vout /v in

    What other aspects of an amplifier’sperformance are important?

    power dissipationspeednoise

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    4/94Electronics 5-4Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    In an ideal voltage amplifier, the input impedance isinfinite and the output impedance zero .

    But in reality, input or output impedances depart fromtheir ideal values.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    5/94Electronics 5-5Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    The figure above shows the techniques ofmeasuring input and output impedances.

    A zero voltage source is replaced by a short anda zero current source by an open.

    x

    x x i

    V R =

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    6/94Electronics 5-6Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    Input ImpedanceWhen calculating input/output impedance, small-

    signal analysis is assumed.β↑ or IC ↓⇒ r π ↑

    C

    T

    m

    x

    x

    I

    V

    gr

    r iv

    β β π

    π

    ==

    =

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    7/94Electronics 5-7Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    When calculating I/O impedances at a port, weusually ground one terminal while applying thetest source to the other terminal of interest.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    8/94Electronics 5-8Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    Impedance at Collector With Early effect, the impedance seen at the collector is

    equal to the intrinsic output impedance of the transistor(if emitter is grounded).

    oout r R =

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    9/94Electronics 5-9Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    Impedance at Emitter The impedance seen at the emitter of a

    transistor is approximately equal to one over itstransconductance (if the base is grounded).

    )(

    1

    1

    1

    ∞=≈

    +=

    A

    mout

    m x

    x

    V

    g R

    r gi

    v

    π

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    10/94Electronics 5-10Tamkang University

    5.1 General Considerations--Inputand Output Impedances

    Rule # 1: looking into the base , the impedance is r π if emitter is (ac) grounded.

    Rule # 2: looking into the collector , the impedance is r o ifemitter is (ac) grounded.Rule # 3: looking into the emitter , the impedance is 1/g mif base is (ac) grounded and Early effect is neglected.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    11/94Electronics 5-11Tamkang University

    5.1 General Considerations--Biasing

    Transistors and circuits must be biased because(1) transistors must operate in the active region,(2) their small-signal parameters depend on the biasconditions.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    12/94Electronics 5-12Tamkang University

    5.1 General Considerations--DC andSmall-Signal Analysis

    A procedure for the analysis of amplifiersFirst, DC analysis is performed to determineoperating point and obtain small-signal parameters.Second, sources are set to zero and small-signalmodel is used.

    Ground all constant voltage sourcesOpen all constant current sources

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    13/94

    Electronics 5-13Tamkang University

    5.1 General Considerations-- DCand Small-Signal Analysis

    Notation SimplificationHereafter, the battery that supplies power to the circuit isreplaced by a horizontal bar labeled Vcc, and inputsignal is simplified as one node called Vin.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    14/94

    Electronics 5-14Tamkang University

    5.2 Operating Point Analysis and Design

    Example of Bad BiasingIS=6X10 -16 A & the peak valueof the microphone signal is 20mV

    Vout

    =1.29X10 -12V

    The base of the amplifier isconnected to Vcc, trying toestablish a DC bias.Unfortunately, the output signal

    produced by the microphone isshorted to the power supply .

    2 O i i A l i d

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    15/94

    Electronics 5-15Tamkang University

    5.2 Operating Point Analysis andDesign--Simple Biasing

    Assuming a constant value for V BE, one can solve for both IB and I C anddetermine the terminal voltages of the transistor.

    IB →IC →VCEBias point is sensitive to β variations .

    β increases from 100 to 120 ⇒ IC rises from 1.65mA to 1.98mA & VCE falls from0.85V to 0.52V

    B

    BE CC C

    B

    BE CC B R

    V V I

    RV V

    I −=−= β ,

    regioactive forV R R

    V V V

    R R

    V V V

    I RV V

    BE C B

    BE CC CC

    C B

    BE CC CC

    C C CC CE

    >−−

    −−=

    −=

    β

    β

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    16/94

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    17/94

    Electronics 5-17Tamkang University

    5.2 Operating Point Analysis and Design--Resistive Divider Biasing

    Accounting for Base CurrentWith proper ratio of R 1 and R 2, IC can be insensitive to β; however, itsexponential dependence on resistor deviations makes it less useful.

    R2 ↑ 1% ⇒ exp(0.01V BE/VT ) ≈ 1.36 ⇒ IC ↑ 36%

    ⎟ ⎠ ⎞⎜

    ⎝ ⎛ −=

    T

    Thev BThevS C V

    R I V I I exp

    Thev

    BE Thev

    ThevS

    C T Thev B

    RV V

    R I I

    V V I

    −=

    ∗⎟⎟

    ⎠ ⎞

    ⎜⎜

    ⎝ ⎛ −=

    1ln

    l d

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    18/94

    Electronics 5-18Tamkang University

    5.2 Operating Point Analysis and Design--Biasing with Emitter Degeneration

    Emitter Degeneration BiasingThe presence of RE helps to absorb the error in V X soVBE stays relatively constant .This bias technique is less sensitive to β (I1 >> IB) andVBE variations.

    5 2 O i P i A l i d D i

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    19/94

    Electronics 5-19Tamkang University

    5.2 Operating Point Analysis and Design--Biasing with Emitter Degeneration

    Design ProcedureChoose an I C to providethe necessary small

    signal parameters, g m, r π,etc.Considering thevariations of R

    1, R

    2, and

    VBE, choose a value forVRE.With VRE chosen, and V BEcalculated, V x can bedetermined.Select R 1 and R 2 to

    provide V x.

    5 2 O i P i A l i d D i

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    20/94

    Electronics 5-20Tamkang University

    5.2 Operating Point Analysis and Design--Self-Biased Stage

    This bias technique utilizes the collectorvoltage to provide the necessary V x and I B.One important characteristic of this techniqueis that collector has a higher potential than the

    base, thus guaranteeing active operation of thetransistor.Design guidelines

    (1) provides insensitivity to β .(2) provides insensitivity to variation in V BE .

    BE CC BE

    BC

    V V V

    R R

    − β

    5 2 O ti P i t A l i d D i

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    21/94

    Electronics 5-21Tamkang University

    5.2 Operating Point Analysis and Design--Self-Biased Stage

    Design ProcedureBecause R C >> R B/β ⇒ Assuming R C =10R B/β

    BE CC BE

    BC

    V V V

    R R

    − β

    5 2 O ti g P i t A l i d D ig

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    22/94

    Electronics 5-22Tamkang University

    5.2 Operating Point Analysis and Design--Self-Biased Stage

    Summary of Biasing Techniques

    5 2 Operating Point Analysis and Design

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    23/94

    Electronics 5-23Tamkang University

    5.2 Operating Point Analysis and Design--Biasing of PNP Transistors

    VX = IBRB & VY = ICRC ifIBRB = ICRC,max⇒ RC,max = RB/βThe circuit suffers fromsensitivity to β.

    5 2 Operating Point Analysis and Design

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    24/94

    Electronics 5-24Tamkang University

    5.2 Operating Point Analysis and Design--Biasing of PNP Transistors

    If IB is significant,then the transistorbias heavily dependson .

    5 2 Operating Point Analysis and Design

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    25/94

    Electronics 5-25Tamkang University

    5.2 Operating Point Analysis and Design--Biasing of PNP Transistors

    5 2 Operating Point Analysis and Design

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    26/94

    Electronics 5-26Tamkang University

    5.2 Operating Point Analysis and Design--Biasing of PNP Transistors

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    27/94

    Electronics 5-27Tamkang University

    5.3 Bipolar Amplifier Topologies

    Three possible ways to apply an input to an amplifier and three possibleways to sense its output.However, in reality only three of six input/output combinations are useful.

    5 3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    28/94

    Electronics 5-28Tamkang University

    5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology

    Study of Common-Emitter Topology

    Analysis of CE CoreInclusion of Early EffectCE Stage With EmitterDegeneration

    Inclusion of Early Effect

    CE Stage with Biasing

    5 3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    29/94

    Electronics 5-29Tamkang University

    5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology

    C mv

    inmmC

    out

    in

    out v

    Rg A

    vgvg Rv

    vv

    A

    −=

    ==−

    =

    π

    Small Signal of CE Amplifier

    small-signal gain is negative

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    30/94

    Electronics 5-30Tamkang University

    5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology

    Limitation on CE Voltage GainSince g m can be written as I C/VT, the CE voltage gain can be written asthe ratio of V RC and V T.VRC is the potential difference between V CC and V CE, and V CE cannot gobelow V

    BEin order for the transistor to be in active region.

    T

    C C v V R I

    A =T

    RC v V V

    A =T

    BE CC v V V V

    A −

    <

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    31/94

    Electronics 5-31Tamkang University

    5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology

    VCC = 1.8 V, a powerbudget (P) of 1mW find Av,max

    VBE ≈ 800mV

    Q1 in soft saturationVCE ≈ 400mV

    Tradeoff between VoltageGain and Headroom

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    32/94

    Electronics 5-32Tamkang University

    5.3 po a p e opo og esCommon-Emitter Topology

    IC ↑ ⇒ Rin ↓ When measuring outputimpedance, the input porthas to be grounded so

    that Vin = 0.

    C

    T

    m X

    X in I V

    gr iv

    R β β π ==== C X

    X out Ri

    v R ==

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    33/94

    Electronics 5-33Tamkang University

    p p p gCommon-Emitter Topology

    CE Stage Trade-offs

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    34/94

    Electronics 5-34Tamkang University

    p p p gCommon-Emitter Topology

    Inclusion of Early EffectEarly effect will lower thegain of the CE amplifier,as it appears in parallelwith RC.

    As R C →∞, Av= - gm r Othe maximum voltage gainof the amplifier

    The intrinsic gain isindependent of the biascurrent.

    OC out

    OC mv

    r R R

    r Rg A

    ||)(

    =−=

    T

    Av

    Omv

    V V A

    r g A

    =

    −=

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    35/94

    Electronics 5-35Tamkang University

    p p p gCommon-Emitter Topology

    Current Gain Another parameter of the amplifier is the current gain ,which is defined as the ratio of current delivered to theload to the current flowing into the input.For a CE stage, it is equal to β.

    β =

    =

    CE I

    in

    out I

    Ai

    i A

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    36/94

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    37/94

    Electronics 5-37Tamkang University

    Common-Emitter Topology

    Small-Signal ModelInterestingly, this gain is equal to the total loadresistance to ground divided by 1/g m plus the totalresistance placed in series with the emitter .

    Av ↓ (1+ g mRE)Rin = r π + (β+1) R E

    E m

    C v

    E m

    C mv

    Rg

    R A

    Rg Rg

    A

    +−=

    +−=

    1

    1

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    38/94

    Electronics 5-38Tamkang University

    Common-Emitter Topology

    The input impedance of Q2 can becombined in parallel with R E toyield an equivalent impedance thatdegenerates Q

    1.

    21

    ||1 π r Rg

    R A

    E m

    C v

    +−=

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    39/94

    Electronics 5-39Tamkang University

    Common-Emitter Topology

    In this example, the inputimpedance of Q

    2can be

    combined in parallel with R Cto yield an equivalentcollector impedance toground.

    E m

    C

    v R

    g

    r R

    A +−=1

    2

    1|| π

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    40/94

    Electronics 5-40Tamkang University

    Common-Emitter Topology

    Input Impedance of Degenerated CE StageWith emitter degeneration, the input impedance

    is increased from r π to r π + (β+1)R E.

    E

    X

    X in

    X E X X

    A

    Rr iv

    R

    i Rir v

    V

    )1()1(

    ++==++=

    ∞=

    β

    β

    π

    π

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    41/94

    Electronics 5-41Tamkang University

    Common-Emitter Topology

    Output Impedance of Degenerated CEStage

    Emitter degeneration does not alter the outputimpedance in this case.

    C

    X

    X out

    E min

    A

    Riv

    R

    v Rvg

    r

    vvv

    V

    ==

    =⇒⎟⎟ ⎠

    ⎞⎜⎜

    ⎛ ++==

    ∞=

    00 π π π

    π π

    5.3 Bipolar Amplifier Topologies--

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    42/94

    Electronics 5-42Tamkang University

    Common-Emitter Topology

    If gmRE is much greater than

    unity, G m is more linear.If a load resistance is R C Av = - Gm RC

    If Gm RE >>1 ⇒ Av = - RC/RE

    E m

    m

    in

    out m

    E m

    inmout

    A

    Rgg

    vi

    G

    Rgr v

    gi

    V

    +≈=

    ++=

    ∞=

    1

    )(1 1π

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    43/94

    5.3 Bipolar Amplifier Topologies--C E i T l

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    44/94

    Electronics 5-44Tamkang University

    Common-Emitter Topology

    Input/Output ImpedancesRin1 is more important in practice as R B isoften the output impedance of the previous

    stage.

    C out

    E Bin

    E in

    A

    R R

    Rr R R

    Rr R

    V

    =+++=

    ++=∞=

    )1()1(

    22

    1

    β

    β

    π

    π

    5.3 Bipolar Amplifier Topologies--C E i T l

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    45/94

    Electronics 5-45Tamkang University

    Common-Emitter Topology

    Determine the voltage

    gain and I/O impedancesof the circuit A very large value for C1

    and neglect the Early effect. 1

    2

    2

    1

    ||)1(

    1

    1)(

    R R R

    Rr R

    R R

    g

    R R A

    C out

    in

    B

    m

    C v

    =++=

    +++

    −=

    β β

    π

    5.3 Bipolar Amplifier Topologies--C E itt T l

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    46/94

    Electronics 5-46Tamkang University

    Common-Emitter Topology

    Output Impedance of Degenerated Stagewith V A

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    47/94

    Electronics 5-47Tamkang University

    Common-Emitter Topology

    This seemingly complicated circuit can be greatlysimplified by first recognizing that the capacitor createsan AC short to ground , and gradually transforming the

    circuit to a known topology.

    [ ] 12 ||)||(1 Rr r Rg R Omout π +=[ ] Omout r r Rg R )||(1 21 π +=11 || out out R R R =

    5.3 Bipolar Amplifier Topologies--Common Emitter Topolog

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    48/94

    Electronics 5-48Tamkang University

    Common-Emitter Topology

    Called a “ cascode ”, the circuit offers manyadvantages that are described later in the

    book.

    [ ] 1121 )||(1 OOmout r r r g R π +=

    5.3 Bipolar Amplifier Topologies--Common Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    49/94

    Electronics 5-49Tamkang University

    Common-Emitter Topology

    Since the microphone has avery low resistance thatconnects from the base of Q 1to ground, it attenuates thebase voltage and renders Q 1without a bias current.

    Capacitor isolates the biasnetwork from the microphoneat DC but shorts themicrophone to the amplifier athigher frequencies.

    Use of Coupling Capacitor ac-coupled

    5.3 Bipolar Amplifier Topologies--Common Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    50/94

    Electronics 5-50Tamkang University

    Common-Emitter Topology

    DC and AC AnalysisCoupling capacitor is open for DCcalculations and shorted for AC calculations.

    OC out

    Bin

    OC mv

    r R R

    Rr R

    r Rg

    ||||

    )||(

    ==

    −=π

    5.3 Bipolar Amplifier Topologies--Common Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    51/94

    Electronics 5-51Tamkang University

    Common-Emitter Topology

    Since the speaker has aninductor , connecting it directlyto the amplifier would short thecollector at DC and thereforepush the transistor into deepsaturation .

    The AC coupling indeed allowscorrect biasing.However, due to the speaker’ssmall input impedance, theoverall gain drops considerably.

    Still No Gain!!!

    5.3 Bipolar Amplifier Topologies--Common Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    52/94

    Electronics 5-52Tamkang University

    Common-Emitter Topology

    OC out

    in

    OC mv

    r R R

    R Rr R

    r Rg A

    ||

    ||||)||(

    21

    ==−=

    π

    [ ]C out

    E in

    E m

    C v

    R R

    R R Rr R

    Rg

    R A

    =++=

    +−=

    21 ||||)1(

    1

    β π

    5.3 Bipolar Amplifier Topologies--Common-Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    53/94

    Electronics 5-53Tamkang University

    Common-Emitter Topology

    Capacitor shorts out R E at higherfrequencies and removes degeneration.

    C out

    in

    C mv

    R R

    R Rr R Rg A

    ==

    −=21 ||||π

    5.3 Bipolar Amplifier Topologies--Common-Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    54/94

    Electronics 5-54Tamkang University

    Common Emitter Topology

    1||||1

    ||21

    +++

    −=

    β R R R

    Rg

    R A

    s E

    m

    LC v

    5.3 Bipolar Amplifier Topologies--Common-Emitter Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    55/94

    Electronics 5-55Tamkang University

    Common Emitter Topology

    Summary of CE Concepts

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    56/94

    Electronics 5-56Tamkang University

    Common Base Topology

    In common base (CB) topology, where the baseterminal is biased with a fixed voltage, emitter is

    fed with a signal, and collector is the output.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    57/94

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    58/94

    Electronics 5-58Tamkang University

    Common Base Topology

    Tradeoff between Gain and HeadroomTo maintain the transistor out of saturation, themaximum voltage drop across R C cannot exceed VCC-VBE.

    T

    BE CC

    C T

    C v

    V

    V V

    RV I A

    −=

    = .

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    59/94

    Electronics 5-59Tamkang University

    p gy

    Ω=⇒

    Ω=⇒+=

    Ω=+⇒+≈≈

    K R

    K R

    V R R

    RV

    K R R

    R RV I I if

    CC b

    CC B

    7.67

    3.22

    90

    10

    2

    1

    21

    2

    21

    211

    V

    mV I

    I V

    mV V V

    S

    C T

    BE b

    354.1

    600)ln(

    600

    =

    +=

    +=

    2.17== C mv Rg A

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    60/94

    Electronics 5-60Tamkang University

    p gy

    The input impedance of CB stage is muchsmaller than that of the CE stage.

    min g

    R 1=

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    61/94

    Electronics 5-61Tamkang University

    p gy

    Practical Application of CB StageTo avoid “ reflections ”, need impedancematching .CB stage’s low input impedance can be

    used to create a match with 50 Ω.

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    62/94

    Electronics 5-62Tamkang University

    p gy

    Output Impedance of CB StageThe output impedance of CB stage is similarto that of CE stage.

    C Oout Rr R ||=

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    63/94

    Electronics 5-63Tamkang University

    CB Stage with Source ResistanceWith an inclusion of a source resistor, the input signal is attenuatedbefore it reaches the emitter of the amplifier; therefore, we see alower voltage gain .This is similar to CE stage emitter degeneration; only the phase isreversed.

    The CB stage displays a current gain of unity.

    S m

    C v

    Rg

    R A

    +

    =1

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    64/94

    Electronics 5-64Tamkang University

    An antenna usually has low output impedance;therefore, a correspondingly low input

    impedance is required for the following stage.

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    65/94

    Electronics 5-65Tamkang University

    Realistic Output Impedance of CB StageThe output impedance of CB stage is equal to R C inparallel with the impedance looking down into thecollector.

    [ ] ( )1

    1

    ||||)||(1

    out C out

    E O E mout

    R R Rr Rr r Rg R

    =++= π π

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    66/94

    Electronics 5-66Tamkang University

    The output impedances of CE, CB stages are the same if bothcircuits are under the same condition.This is because when calculating output impedance, the input port isgrounded, which renders the same circuit for both CE and CBstages.

    CE stageCB stage

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    67/94

    Electronics 5-67Tamkang University

    With an addition of base resistance, the voltage

    gain degrades .

    m

    B E

    C

    in

    out

    g

    R R

    Rvv

    1

    1+

    ++

    β

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    68/94

    Electronics 5-68Tamkang University

    The voltage gain of CB amplifier with base resistance isexactly the same as that of CE stage with baseresistance and emitter degeneration, except for a

    negative sign .

    m

    B E

    C

    in

    out

    g R R

    R

    v

    v

    11+++

    β 1

    1+

    ++

    −≈

    β B

    E m

    C

    in

    out

    R Rg

    Rvv

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    69/94

    Electronics 5-69Tamkang University

    Input Impedance of CB Stage with Base ResistanceThe input impedance of CB with base resistance is equal to1/g m plus R B divided by ( β+1).

    The base resistance is divided by ( β + 1) when “seen” from theemitter This is in contrast to degenerated CE stage, in which theresistance in series with the emitter is multiplied by (β+1)when seen from the base .

    11

    1 ++≈

    ++=

    β β π B

    m

    B

    X

    X Rg

    Rr iv

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    70/94

    Electronics 5-70Tamkang University

    To find the R X, we have to first find Req,treat it as the base resistance of Q 2 and

    divide it by ( β+1).

    ⎟⎟⎜⎜⎝ ⎛

    ++

    ++=

    11

    111

    12 β β B

    mm X

    Rgg

    R

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    71/94

    Electronics 5-71Tamkang University

    Bad Bias Techniquefor CB StageUnfortunately, no

    emitter current canflow.

    Bad Bias Techniquefor CB StageThe input signal has

    been shorted toground as well.

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    72/94

    Electronics 5-72Tamkang University

    Proper Biasing for CB Stage( ) C mS E min

    out

    E

    m

    in

    Rg R Rgv

    v

    Rg R

    ++=

    =

    111

    ||1

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    73/94

    Electronics 5-73Tamkang University

    Reduction of Input Impedance Due to R EThe reduction of input impedance due to R E is bad because it shuntspart of the input current to ground instead of to Q 1 (and R c) .

    RE ↓ ⇒ i1↑ & i2 ↓ ⇒ bad1/g

    m ↓ ⇒ i

    1↓ & i

    2 ↑ ⇒ good

    RE >> 1/g m ⇒ IC RE >> VT

    E m

    in Rg R ||1

    =

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    74/94

    Electronics 5-74Tamkang University

    Creation of V b

    Resistive divider lowers the gain .To remedy this problem, a capacitor is insertedfrom base to ground to short out the resistordivider at the frequency of interest.

    m

    B E

    C

    in

    out

    g R

    R

    Rvv

    11+

    ++

    β

    5.3 Bipolar Amplifier Topologies--Common-Base Topology

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    75/94

    Electronics 5-75Tamkang University

    For the circuit shown above, RE >> 1/g m.R1 and R 2 are chosen so that V b is at theappropriate value and the current that flows thruthe divider is much larger than the base current.Capacitors are chosen to be small compared to1/g m at the required frequency.

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    76/94

    Electronics 5-76Tamkang University

    Common Collector Amplifier When the input is increased by ΔV, output is alsoincreased by an amount that is less than ΔV due to theincrease in collector current and hence the increase inpotential drop across R E.However the absolute values of input and output differ bya VBE.

    level shift

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    77/94

    Electronics 5-77Tamkang University

    Small-Signal Model of Emitter Follower As shown above, the voltage gain is

    less than unity and positive .

    m E

    E

    E

    in

    out

    g R

    R

    Rr v

    v11

    11

    1

    +≈⋅+

    += β

    π

    ∞= AV

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    78/94

    Electronics 5-78Tamkang University

    Unity-Gain Emitter Follower The voltage gain is unity because aconstant collector current (= I 1) results in aconstant V BE, and hence V out follows Vinexactly.

    Vout = Vin - VBE

    1=v

    A

    ∞= AV

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    79/94

    Electronics 5-79Tamkang University

    Analysis of Emitter Follower as a VoltageDivider

    ∞= AV

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    80/94

    Electronics 5-80Tamkang University

    Emitter Follower with Source Resistance

    m

    S E

    E

    in

    out

    g R

    R

    Rvv

    11+

    ++

    =

    β

    ∞= AV

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    81/94

    Electronics 5-81Tamkang University

    Input Impedance of Emitter Follower The input impedance of emitter follower is exactly the same as that of CEstage with emitter degeneration .This is not surprising because the input impedance of CE with emitter

    degeneration does not depend on the collector resistance.

    E X

    X Rr iv )1( β π ++=

    ∞= AV

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    82/94

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    83/94

    Electronics 5-83Tamkang University

    Output Impedance of Emitter Follower Emitter follower lowers the source impedance by afactor of β+1 improved driving capability.

    A good voltage buffer

    E m

    sout Rg

    R R ||11 ⎟⎟ ⎞⎜⎜⎝ ⎛ ++= β

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    84/94

    Electronics 5-84Tamkang University

    Emitter Follower with Early Effect

    Since r O is in parallel with R E, its effect canbe easily incorporated into voltage gain

    and input and output impedance equations.

    ( )( )

    O E m

    sout

    O E in

    m

    S O E

    O E v

    r Rg

    R R

    r Rr R

    g R

    r R

    r R A

    ||||11

    ||1

    11

    ||||

    ⎟⎟ ⎞

    ⎜⎜⎝ ⎛ +

    +=

    ++=

    ++

    +=

    β

    β

    β

    π

    5.3 Bipolar Amplifier Topologies--Emitter Follower

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    85/94

    Electronics 5-85Tamkang University

    There is a current gain of (β+1) from base to emitter.Effectively speaking, the load resistance is multiplied by(β+1) as seen from the base.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    86/94

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    87/94

    Electronics 5-87Tamkang University

    The three amplifier topologies studied so farhave different properties and are used on

    different occasions.CE and CB have voltage gain with magnitudegreater than one, while follower’s voltage gain isat most one.

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    88/94

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    89/94

    Electronics 5-89Tamkang University

    Again, AC ground/short and Thevenin transformation areneeded to transform the complex circuit into a simplestage with emitter degeneration.

    S

    m

    S

    C

    in

    out

    R R R Rg

    R R Rvv +⋅+++

    −=1

    1

    21 1

    1||

    β

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    90/94

    Electronics 5-90Tamkang University

    The key for solving this problem is firstidentifying R eq , which is the impedance seen at

    the emitter of Q 2 in parallel with the infiniteoutput impedance of an ideal current source.Second, use the equations for degenerated CE

    stage with R E replaced by R eq .

    2

    1

    1

    211

    11

    1mm

    C v

    in

    g R

    g

    R A

    r Rr R

    +++

    −=

    ++=

    β

    π π

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    91/94

    Electronics 5-91Tamkang University

    The key for solving this problem is recognizing that CB atfrequency of interest shorts out R 2 and provide a groundfor R1.

    R1 appears in parallel with R C and the circuit simplifies toa simple CB stage.

    mS

    C v

    g R

    R R A 1||1

    +=

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    92/94

    Electronics 5-92Tamkang University

    The key for solving this problem is recognizing theequivalent base resistance of Q 1 is the parallelconnection of R E and the impedance seen at the emitterof Q

    2.

    12

    1||111

    1m

    E m

    Bin g

    Rg

    R R +⎥⎦

    ⎤⎢⎣

    ⎡⎟⎟ ⎠ ⎞

    ⎜⎜⎝ ⎛ +

    ++=

    β β

    5.3 Bipolar Amplifier Topologies--Summary and Additional Examples

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    93/94

    Electronics 5-93Tamkang University

    The key in solving this problem is recognizing a DCsupply is actually an AC ground and using Thevenintransformation to simplify the circuit into an emitterfollower.

    S S

    m

    O E

    O E

    in

    out

    R R R

    R R

    g

    r R R

    r R Rvv

    +⋅

    +

    ++=

    1

    1

    12

    2

    1

    ||1||||

    ||||

    β

    O E m

    S out r R Rg

    R R R ||||||1

    1||

    21

    ⎟⎟ ⎞

    ⎜⎜⎝ ⎛ +

    +=

    β

  • 8/19/2019 1231231231231saxf asdf asdf.pdf

    94/94