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Tamkang University, VLSI Lab.
Fundamentals of
Microelectronics—Bipolar Amplifier
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Electronics 5-2Tamkang University
Bipolar Amplifiers
5.1 General Considerations5.2 Operating Point Analysis and Design5.3 Bipolar Amplifier Topologies5.4 Summary and Additional Examples
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Electronics 5-3Tamkang University
5.1 General Considerations
Voltage amplifiersVoltage gain: vout /v in
What other aspects of an amplifier’sperformance are important?
power dissipationspeednoise
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4/94Electronics 5-4Tamkang University
5.1 General Considerations--Inputand Output Impedances
In an ideal voltage amplifier, the input impedance isinfinite and the output impedance zero .
But in reality, input or output impedances depart fromtheir ideal values.
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5/94Electronics 5-5Tamkang University
5.1 General Considerations--Inputand Output Impedances
The figure above shows the techniques ofmeasuring input and output impedances.
A zero voltage source is replaced by a short anda zero current source by an open.
x
x x i
V R =
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6/94Electronics 5-6Tamkang University
5.1 General Considerations--Inputand Output Impedances
Input ImpedanceWhen calculating input/output impedance, small-
signal analysis is assumed.β↑ or IC ↓⇒ r π ↑
C
T
m
x
x
I
V
gr
r iv
β β π
π
==
=
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5.1 General Considerations--Inputand Output Impedances
When calculating I/O impedances at a port, weusually ground one terminal while applying thetest source to the other terminal of interest.
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8/94Electronics 5-8Tamkang University
5.1 General Considerations--Inputand Output Impedances
Impedance at Collector With Early effect, the impedance seen at the collector is
equal to the intrinsic output impedance of the transistor(if emitter is grounded).
oout r R =
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9/94Electronics 5-9Tamkang University
5.1 General Considerations--Inputand Output Impedances
Impedance at Emitter The impedance seen at the emitter of a
transistor is approximately equal to one over itstransconductance (if the base is grounded).
)(
1
1
1
∞=≈
+=
A
mout
m x
x
V
g R
r gi
v
π
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10/94Electronics 5-10Tamkang University
5.1 General Considerations--Inputand Output Impedances
Rule # 1: looking into the base , the impedance is r π if emitter is (ac) grounded.
Rule # 2: looking into the collector , the impedance is r o ifemitter is (ac) grounded.Rule # 3: looking into the emitter , the impedance is 1/g mif base is (ac) grounded and Early effect is neglected.
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5.1 General Considerations--Biasing
Transistors and circuits must be biased because(1) transistors must operate in the active region,(2) their small-signal parameters depend on the biasconditions.
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12/94Electronics 5-12Tamkang University
5.1 General Considerations--DC andSmall-Signal Analysis
A procedure for the analysis of amplifiersFirst, DC analysis is performed to determineoperating point and obtain small-signal parameters.Second, sources are set to zero and small-signalmodel is used.
Ground all constant voltage sourcesOpen all constant current sources
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Electronics 5-13Tamkang University
5.1 General Considerations-- DCand Small-Signal Analysis
Notation SimplificationHereafter, the battery that supplies power to the circuit isreplaced by a horizontal bar labeled Vcc, and inputsignal is simplified as one node called Vin.
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Electronics 5-14Tamkang University
5.2 Operating Point Analysis and Design
Example of Bad BiasingIS=6X10 -16 A & the peak valueof the microphone signal is 20mV
Vout
=1.29X10 -12V
The base of the amplifier isconnected to Vcc, trying toestablish a DC bias.Unfortunately, the output signal
produced by the microphone isshorted to the power supply .
2 O i i A l i d
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Electronics 5-15Tamkang University
5.2 Operating Point Analysis andDesign--Simple Biasing
Assuming a constant value for V BE, one can solve for both IB and I C anddetermine the terminal voltages of the transistor.
IB →IC →VCEBias point is sensitive to β variations .
β increases from 100 to 120 ⇒ IC rises from 1.65mA to 1.98mA & VCE falls from0.85V to 0.52V
B
BE CC C
B
BE CC B R
V V I
RV V
I −=−= β ,
regioactive forV R R
V V V
R R
V V V
I RV V
BE C B
BE CC CC
C B
BE CC CC
C C CC CE
>−−
−−=
−=
β
β
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Electronics 5-17Tamkang University
5.2 Operating Point Analysis and Design--Resistive Divider Biasing
Accounting for Base CurrentWith proper ratio of R 1 and R 2, IC can be insensitive to β; however, itsexponential dependence on resistor deviations makes it less useful.
R2 ↑ 1% ⇒ exp(0.01V BE/VT ) ≈ 1.36 ⇒ IC ↑ 36%
⎟ ⎠ ⎞⎜
⎝ ⎛ −=
T
Thev BThevS C V
R I V I I exp
Thev
BE Thev
ThevS
C T Thev B
RV V
R I I
V V I
−=
∗⎟⎟
⎠ ⎞
⎜⎜
⎝ ⎛ −=
1ln
l d
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Electronics 5-18Tamkang University
5.2 Operating Point Analysis and Design--Biasing with Emitter Degeneration
Emitter Degeneration BiasingThe presence of RE helps to absorb the error in V X soVBE stays relatively constant .This bias technique is less sensitive to β (I1 >> IB) andVBE variations.
5 2 O i P i A l i d D i
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Electronics 5-19Tamkang University
5.2 Operating Point Analysis and Design--Biasing with Emitter Degeneration
Design ProcedureChoose an I C to providethe necessary small
signal parameters, g m, r π,etc.Considering thevariations of R
1, R
2, and
VBE, choose a value forVRE.With VRE chosen, and V BEcalculated, V x can bedetermined.Select R 1 and R 2 to
provide V x.
5 2 O i P i A l i d D i
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Electronics 5-20Tamkang University
5.2 Operating Point Analysis and Design--Self-Biased Stage
This bias technique utilizes the collectorvoltage to provide the necessary V x and I B.One important characteristic of this techniqueis that collector has a higher potential than the
base, thus guaranteeing active operation of thetransistor.Design guidelines
(1) provides insensitivity to β .(2) provides insensitivity to variation in V BE .
BE CC BE
BC
V V V
R R
− β
5 2 O ti P i t A l i d D i
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Electronics 5-21Tamkang University
5.2 Operating Point Analysis and Design--Self-Biased Stage
Design ProcedureBecause R C >> R B/β ⇒ Assuming R C =10R B/β
BE CC BE
BC
V V V
R R
− β
5 2 O ti g P i t A l i d D ig
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Electronics 5-22Tamkang University
5.2 Operating Point Analysis and Design--Self-Biased Stage
Summary of Biasing Techniques
5 2 Operating Point Analysis and Design
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Electronics 5-23Tamkang University
5.2 Operating Point Analysis and Design--Biasing of PNP Transistors
VX = IBRB & VY = ICRC ifIBRB = ICRC,max⇒ RC,max = RB/βThe circuit suffers fromsensitivity to β.
5 2 Operating Point Analysis and Design
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Electronics 5-24Tamkang University
5.2 Operating Point Analysis and Design--Biasing of PNP Transistors
If IB is significant,then the transistorbias heavily dependson .
5 2 Operating Point Analysis and Design
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5.2 Operating Point Analysis and Design--Biasing of PNP Transistors
5 2 Operating Point Analysis and Design
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Electronics 5-26Tamkang University
5.2 Operating Point Analysis and Design--Biasing of PNP Transistors
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Electronics 5-27Tamkang University
5.3 Bipolar Amplifier Topologies
Three possible ways to apply an input to an amplifier and three possibleways to sense its output.However, in reality only three of six input/output combinations are useful.
5 3 Bipolar Amplifier Topologies--
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5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology
Study of Common-Emitter Topology
Analysis of CE CoreInclusion of Early EffectCE Stage With EmitterDegeneration
Inclusion of Early Effect
CE Stage with Biasing
5 3 Bipolar Amplifier Topologies--
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Electronics 5-29Tamkang University
5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology
C mv
inmmC
out
in
out v
Rg A
vgvg Rv
vv
A
−=
==−
=
π
Small Signal of CE Amplifier
small-signal gain is negative
5.3 Bipolar Amplifier Topologies--
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5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology
Limitation on CE Voltage GainSince g m can be written as I C/VT, the CE voltage gain can be written asthe ratio of V RC and V T.VRC is the potential difference between V CC and V CE, and V CE cannot gobelow V
BEin order for the transistor to be in active region.
T
C C v V R I
A =T
RC v V V
A =T
BE CC v V V V
A −
<
5.3 Bipolar Amplifier Topologies--
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5.3 Bipolar Amplifier TopologiesCommon-Emitter Topology
VCC = 1.8 V, a powerbudget (P) of 1mW find Av,max
VBE ≈ 800mV
Q1 in soft saturationVCE ≈ 400mV
Tradeoff between VoltageGain and Headroom
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5.3 po a p e opo og esCommon-Emitter Topology
IC ↑ ⇒ Rin ↓ When measuring outputimpedance, the input porthas to be grounded so
that Vin = 0.
C
T
m X
X in I V
gr iv
R β β π ==== C X
X out Ri
v R ==
5.3 Bipolar Amplifier Topologies--
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p p p gCommon-Emitter Topology
CE Stage Trade-offs
5.3 Bipolar Amplifier Topologies--
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p p p gCommon-Emitter Topology
Inclusion of Early EffectEarly effect will lower thegain of the CE amplifier,as it appears in parallelwith RC.
As R C →∞, Av= - gm r Othe maximum voltage gainof the amplifier
The intrinsic gain isindependent of the biascurrent.
OC out
OC mv
r R R
r Rg A
||)(
=−=
T
Av
Omv
V V A
r g A
=
−=
5.3 Bipolar Amplifier Topologies--
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p p p gCommon-Emitter Topology
Current Gain Another parameter of the amplifier is the current gain ,which is defined as the ratio of current delivered to theload to the current flowing into the input.For a CE stage, it is equal to β.
β =
=
CE I
in
out I
Ai
i A
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5.3 Bipolar Amplifier Topologies--
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Common-Emitter Topology
Small-Signal ModelInterestingly, this gain is equal to the total loadresistance to ground divided by 1/g m plus the totalresistance placed in series with the emitter .
Av ↓ (1+ g mRE)Rin = r π + (β+1) R E
E m
C v
E m
C mv
Rg
R A
Rg Rg
A
+−=
+−=
1
1
5.3 Bipolar Amplifier Topologies--
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Common-Emitter Topology
The input impedance of Q2 can becombined in parallel with R E toyield an equivalent impedance thatdegenerates Q
1.
21
||1 π r Rg
R A
E m
C v
+−=
5.3 Bipolar Amplifier Topologies--
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Common-Emitter Topology
In this example, the inputimpedance of Q
2can be
combined in parallel with R Cto yield an equivalentcollector impedance toground.
E m
C
v R
g
r R
A +−=1
2
1|| π
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Common-Emitter Topology
Input Impedance of Degenerated CE StageWith emitter degeneration, the input impedance
is increased from r π to r π + (β+1)R E.
E
X
X in
X E X X
A
Rr iv
R
i Rir v
V
)1()1(
++==++=
∞=
β
β
π
π
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Electronics 5-41Tamkang University
Common-Emitter Topology
Output Impedance of Degenerated CEStage
Emitter degeneration does not alter the outputimpedance in this case.
C
X
X out
E min
A
Riv
R
v Rvg
r
vvv
V
==
=⇒⎟⎟ ⎠
⎞⎜⎜
⎝
⎛ ++==
∞=
00 π π π
π π
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Electronics 5-42Tamkang University
Common-Emitter Topology
If gmRE is much greater than
unity, G m is more linear.If a load resistance is R C Av = - Gm RC
If Gm RE >>1 ⇒ Av = - RC/RE
E m
m
in
out m
E m
inmout
A
Rgg
vi
G
Rgr v
gi
V
+≈=
++=
∞=
−
1
)(1 1π
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5.3 Bipolar Amplifier Topologies--C E i T l
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Electronics 5-44Tamkang University
Common-Emitter Topology
Input/Output ImpedancesRin1 is more important in practice as R B isoften the output impedance of the previous
stage.
C out
E Bin
E in
A
R R
Rr R R
Rr R
V
=+++=
++=∞=
)1()1(
22
1
β
β
π
π
5.3 Bipolar Amplifier Topologies--C E i T l
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Electronics 5-45Tamkang University
Common-Emitter Topology
Determine the voltage
gain and I/O impedancesof the circuit A very large value for C1
and neglect the Early effect. 1
2
2
1
||)1(
1
1)(
R R R
Rr R
R R
g
R R A
C out
in
B
m
C v
=++=
+++
−=
β β
π
5.3 Bipolar Amplifier Topologies--C E itt T l
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Common-Emitter Topology
Output Impedance of Degenerated Stagewith V A
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Common-Emitter Topology
This seemingly complicated circuit can be greatlysimplified by first recognizing that the capacitor createsan AC short to ground , and gradually transforming the
circuit to a known topology.
[ ] 12 ||)||(1 Rr r Rg R Omout π +=[ ] Omout r r Rg R )||(1 21 π +=11 || out out R R R =
5.3 Bipolar Amplifier Topologies--Common Emitter Topolog
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Common-Emitter Topology
Called a “ cascode ”, the circuit offers manyadvantages that are described later in the
book.
[ ] 1121 )||(1 OOmout r r r g R π +=
5.3 Bipolar Amplifier Topologies--Common Emitter Topology
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Common-Emitter Topology
Since the microphone has avery low resistance thatconnects from the base of Q 1to ground, it attenuates thebase voltage and renders Q 1without a bias current.
Capacitor isolates the biasnetwork from the microphoneat DC but shorts themicrophone to the amplifier athigher frequencies.
Use of Coupling Capacitor ac-coupled
5.3 Bipolar Amplifier Topologies--Common Emitter Topology
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Common-Emitter Topology
DC and AC AnalysisCoupling capacitor is open for DCcalculations and shorted for AC calculations.
OC out
Bin
OC mv
r R R
Rr R
r Rg
||||
)||(
==
−=π
5.3 Bipolar Amplifier Topologies--Common Emitter Topology
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Common-Emitter Topology
Since the speaker has aninductor , connecting it directlyto the amplifier would short thecollector at DC and thereforepush the transistor into deepsaturation .
The AC coupling indeed allowscorrect biasing.However, due to the speaker’ssmall input impedance, theoverall gain drops considerably.
Still No Gain!!!
5.3 Bipolar Amplifier Topologies--Common Emitter Topology
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Common-Emitter Topology
OC out
in
OC mv
r R R
R Rr R
r Rg A
||
||||)||(
21
==−=
π
[ ]C out
E in
E m
C v
R R
R R Rr R
Rg
R A
=++=
+−=
21 ||||)1(
1
β π
5.3 Bipolar Amplifier Topologies--Common-Emitter Topology
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Common-Emitter Topology
Capacitor shorts out R E at higherfrequencies and removes degeneration.
C out
in
C mv
R R
R Rr R Rg A
==
−=21 ||||π
5.3 Bipolar Amplifier Topologies--Common-Emitter Topology
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Common Emitter Topology
1||||1
||21
+++
−=
β R R R
Rg
R A
s E
m
LC v
5.3 Bipolar Amplifier Topologies--Common-Emitter Topology
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Common Emitter Topology
Summary of CE Concepts
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Common Base Topology
In common base (CB) topology, where the baseterminal is biased with a fixed voltage, emitter is
fed with a signal, and collector is the output.
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5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Common Base Topology
Tradeoff between Gain and HeadroomTo maintain the transistor out of saturation, themaximum voltage drop across R C cannot exceed VCC-VBE.
T
BE CC
C T
C v
V
V V
RV I A
−=
= .
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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p gy
Ω=⇒
Ω=⇒+=
Ω=+⇒+≈≈
K R
K R
V R R
RV
K R R
R RV I I if
CC b
CC B
7.67
3.22
90
10
2
1
21
2
21
211
V
mV I
I V
mV V V
S
C T
BE b
354.1
600)ln(
600
=
+=
+=
2.17== C mv Rg A
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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p gy
The input impedance of CB stage is muchsmaller than that of the CE stage.
min g
R 1=
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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p gy
Practical Application of CB StageTo avoid “ reflections ”, need impedancematching .CB stage’s low input impedance can be
used to create a match with 50 Ω.
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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p gy
Output Impedance of CB StageThe output impedance of CB stage is similarto that of CE stage.
C Oout Rr R ||=
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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CB Stage with Source ResistanceWith an inclusion of a source resistor, the input signal is attenuatedbefore it reaches the emitter of the amplifier; therefore, we see alower voltage gain .This is similar to CE stage emitter degeneration; only the phase isreversed.
The CB stage displays a current gain of unity.
S m
C v
Rg
R A
+
=1
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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An antenna usually has low output impedance;therefore, a correspondingly low input
impedance is required for the following stage.
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Realistic Output Impedance of CB StageThe output impedance of CB stage is equal to R C inparallel with the impedance looking down into thecollector.
[ ] ( )1
1
||||)||(1
out C out
E O E mout
R R Rr Rr r Rg R
=++= π π
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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The output impedances of CE, CB stages are the same if bothcircuits are under the same condition.This is because when calculating output impedance, the input port isgrounded, which renders the same circuit for both CE and CBstages.
CE stageCB stage
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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With an addition of base resistance, the voltage
gain degrades .
m
B E
C
in
out
g
R R
Rvv
1
1+
++
≈
β
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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The voltage gain of CB amplifier with base resistance isexactly the same as that of CE stage with baseresistance and emitter degeneration, except for a
negative sign .
m
B E
C
in
out
g R R
R
v
v
11+++
≈
β 1
1+
++
−≈
β B
E m
C
in
out
R Rg
Rvv
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Input Impedance of CB Stage with Base ResistanceThe input impedance of CB with base resistance is equal to1/g m plus R B divided by ( β+1).
The base resistance is divided by ( β + 1) when “seen” from theemitter This is in contrast to degenerated CE stage, in which theresistance in series with the emitter is multiplied by (β+1)when seen from the base .
11
1 ++≈
++=
β β π B
m
B
X
X Rg
Rr iv
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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To find the R X, we have to first find Req,treat it as the base resistance of Q 2 and
divide it by ( β+1).
⎟⎟⎜⎜⎝ ⎛
++
++=
11
111
12 β β B
mm X
Rgg
R
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Bad Bias Techniquefor CB StageUnfortunately, no
emitter current canflow.
Bad Bias Techniquefor CB StageThe input signal has
been shorted toground as well.
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Proper Biasing for CB Stage( ) C mS E min
out
E
m
in
Rg R Rgv
v
Rg R
++=
=
111
||1
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Reduction of Input Impedance Due to R EThe reduction of input impedance due to R E is bad because it shuntspart of the input current to ground instead of to Q 1 (and R c) .
RE ↓ ⇒ i1↑ & i2 ↓ ⇒ bad1/g
m ↓ ⇒ i
1↓ & i
2 ↑ ⇒ good
RE >> 1/g m ⇒ IC RE >> VT
E m
in Rg R ||1
=
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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Creation of V b
Resistive divider lowers the gain .To remedy this problem, a capacitor is insertedfrom base to ground to short out the resistordivider at the frequency of interest.
m
B E
C
in
out
g R
R
Rvv
11+
++
≈
β
5.3 Bipolar Amplifier Topologies--Common-Base Topology
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For the circuit shown above, RE >> 1/g m.R1 and R 2 are chosen so that V b is at theappropriate value and the current that flows thruthe divider is much larger than the base current.Capacitors are chosen to be small compared to1/g m at the required frequency.
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Common Collector Amplifier When the input is increased by ΔV, output is alsoincreased by an amount that is less than ΔV due to theincrease in collector current and hence the increase inpotential drop across R E.However the absolute values of input and output differ bya VBE.
level shift
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Small-Signal Model of Emitter Follower As shown above, the voltage gain is
less than unity and positive .
m E
E
E
in
out
g R
R
Rr v
v11
11
1
+≈⋅+
+= β
π
∞= AV
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Unity-Gain Emitter Follower The voltage gain is unity because aconstant collector current (= I 1) results in aconstant V BE, and hence V out follows Vinexactly.
Vout = Vin - VBE
1=v
A
∞= AV
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Analysis of Emitter Follower as a VoltageDivider
∞= AV
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Emitter Follower with Source Resistance
m
S E
E
in
out
g R
R
Rvv
11+
++
=
β
∞= AV
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Input Impedance of Emitter Follower The input impedance of emitter follower is exactly the same as that of CEstage with emitter degeneration .This is not surprising because the input impedance of CE with emitter
degeneration does not depend on the collector resistance.
E X
X Rr iv )1( β π ++=
∞= AV
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5.3 Bipolar Amplifier Topologies--Emitter Follower
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Output Impedance of Emitter Follower Emitter follower lowers the source impedance by afactor of β+1 improved driving capability.
A good voltage buffer
E m
sout Rg
R R ||11 ⎟⎟ ⎞⎜⎜⎝ ⎛ ++= β
5.3 Bipolar Amplifier Topologies--Emitter Follower
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Emitter Follower with Early Effect
Since r O is in parallel with R E, its effect canbe easily incorporated into voltage gain
and input and output impedance equations.
( )( )
O E m
sout
O E in
m
S O E
O E v
r Rg
R R
r Rr R
g R
r R
r R A
||||11
||1
11
||||
⎟⎟ ⎞
⎜⎜⎝ ⎛ +
+=
++=
++
+=
β
β
β
π
5.3 Bipolar Amplifier Topologies--Emitter Follower
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There is a current gain of (β+1) from base to emitter.Effectively speaking, the load resistance is multiplied by(β+1) as seen from the base.
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5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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Electronics 5-87Tamkang University
The three amplifier topologies studied so farhave different properties and are used on
different occasions.CE and CB have voltage gain with magnitudegreater than one, while follower’s voltage gain isat most one.
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5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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Electronics 5-89Tamkang University
Again, AC ground/short and Thevenin transformation areneeded to transform the complex circuit into a simplestage with emitter degeneration.
S
m
S
C
in
out
R R R Rg
R R Rvv +⋅+++
−=1
1
21 1
1||
β
5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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The key for solving this problem is firstidentifying R eq , which is the impedance seen at
the emitter of Q 2 in parallel with the infiniteoutput impedance of an ideal current source.Second, use the equations for degenerated CE
stage with R E replaced by R eq .
2
1
1
211
11
1mm
C v
in
g R
g
R A
r Rr R
+++
−=
++=
β
π π
5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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The key for solving this problem is recognizing that CB atfrequency of interest shorts out R 2 and provide a groundfor R1.
R1 appears in parallel with R C and the circuit simplifies toa simple CB stage.
mS
C v
g R
R R A 1||1
+=
5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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The key for solving this problem is recognizing theequivalent base resistance of Q 1 is the parallelconnection of R E and the impedance seen at the emitterof Q
2.
12
1||111
1m
E m
Bin g
Rg
R R +⎥⎦
⎤⎢⎣
⎡⎟⎟ ⎠ ⎞
⎜⎜⎝ ⎛ +
++=
β β
5.3 Bipolar Amplifier Topologies--Summary and Additional Examples
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The key in solving this problem is recognizing a DCsupply is actually an AC ground and using Thevenintransformation to simplify the circuit into an emitterfollower.
S S
m
O E
O E
in
out
R R R
R R
g
r R R
r R Rvv
+⋅
+
++=
1
1
12
2
1
||1||||
||||
β
O E m
S out r R Rg
R R R ||||||1
1||
21
⎟⎟ ⎞
⎜⎜⎝ ⎛ +
+=
β
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