17 09 10 manuscript - pdfs.semanticscholar.org

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Pleasedonotadjustmargins

a. MichaelGrätzelCenterforMesoscopicSolarCells,WuhanNationalLaboratoryforOptoelectronics,SchoolofOpticalandElectronicInformation,HuazhongUniversityofScienceandTechnology,Wuhan430074,Hubei,PRChina.Email:[email protected]

b. InstituteofAdvancedMaterials(INAM),UniversitatJaumeI,12006Castelló,Spain.Email:[email protected]

c. DepartmentofChemistry,FacultyofScience,KingAbdulazizUniversity,Jeddah,SaudiArabia.

†Theseauthorscontributedequallytothiswork.Electronic Supplementary Information (ESI) available: [details of anysupplementary information available should be included here]. SeeDOI:10.1039/x0xx00000x

TunablehysteresiseffectforperovskitesolarcellsYaoguangRonga†,YueHua†,SandheepRavishankarb†,HuaweiLiua,XiaomengHoua,YusongShenga,AnyiMeia,QifeiWanga,DaiyuLia,MiXua,JuanBisquertb,c*,HongweiHana*

Perovskite solar cells (PSCs) usually suffer an anomalous hysteresis in current-voltagemeasurements that leads to aninaccurateestimationofthedeviceefficiency.Althoughionmigration,chargetrapping/detrappingandaccumulationhavebeen proposed as a basis for the hysteresis, the origin of hysteresis has not been apparently unraveled. Herein wereportedatunablehysteresiseffectbaseduniquelyonopen-circuitvoltagevariationsinprintablemesoscopicPSCswithasimplifiedtriple-layerTiO2/ZrO2/Carbonarchitecture.TheelectronsarecollectedbythecompactTiO2/mesoporousTiO2(c-TiO2/mp-TiO2)bilayer,andtheholesarecollectedbythecarbonlayer.Byadjustingthespraydepositioncyclesforthec-TiO2 layer,we achievedhysteresis-normal, hysteresis-free, andhysteresis-invertedPSCs. Suchunique trends of tunablehysteresis are analysed by considering the polarization of the TiO2/perovskite interface,which can accumulate positivecharges reversibly. Successfully tuning the hysteresis effect clarifies the critical importance of the c-TiO2/perovskiteinterface in controlling the hysteretic trends observed, providing important insights towards the understanding of thisrapidlydevelopingphotovoltaictechnology.

1.IntroductionRecently, organic-inorganic metal halide perovskite solar

cells(PSCs)usingamethylammoniumleadhalide(MAPbX3,X=halogen) and its analogues as the light absorber have rapidlydeveloped.1-3 These perovskites have a large absorptioncoefficient, high carrier mobility, long diffusion length anddirect band gap, which make them ideal semiconductors forefficientphotovoltaics.4-6Besides,theyarecomprisedofearth-abundantmaterialsandcanbedepositedbylow-temperaturesolution methods, thus providing a promising prospect forapplications.Inthepastseveralyears,greateffortshavebeendevotedtoachievinghighefficiencyanddevelopingbeneficialdevice fabricationprocesses, launching thepower conversionefficiencies (PCEs) to over 22%.7 At the same time, manyattempts to understand the fundamental working principleandmechanismofPSCshavebeenreported,8-11especiallytheanomalous current-voltage (J-V) hysteresis behavior.12-16 Thisanomaloushysteresisbehaviourhasbeenfurthercomplicatedby the emergence of an ‘inverted hysteresis’ phenomenonrecently. In general, ‘normal’ hysteresis is the case where thereoccurs a large loss of photocurrent and fill factor (FF) during thereverse to forward voltage (R-F) scan, (also leading to a reducedopen-circuitvoltage,VOC)ascomparedtotheforwardtoreverse(F-R) scan.14 Invertedhysteresishasbeenobservedasa reduction intheshort-circuitcurrent(JSC)forF-RscanscomparedtoR-FscansbyShenetal.17andNemnesetal.18whileTressetal.19observedalossin the FF in the form of an S-shaped kink for the F-R scan. Both

normal and inverted hysteresis trends have been observed tobecomemoreacuteforfasterscans.

Since the observed trends in literature are mostly strongvariations in the photocurrent, the general models employed toexplain these types of hysteresis were based on variations in thecollectionefficiencyofPSCs,whichismodulatedbythescreeningoftheinternalelectricfieldbythemobileions.14,20Therefore,normalhysteresis was explained based on the fact that a forward biasvoltagecorrespondedtoafavourablechargeextractionsituationascomparedtoshort-circuit,whilethis trend is reversedfor invertedhysteresis due to a possible extraction barrier at theTiO2/perovskite interface, where the accumulation of anions atshort-circuit creates a dipole that facilitates band alignment andhenceefficientchargeextraction.19

Previously,wehavedevelopedatriple-layerarchitectureofTiO2/ZrO2/Carbonto fabricateahole-conductor-freeprintablemesoscopic PSC.21, 22 By optimizing the mesoporous scaffoldand perovskite absorber, hysteresis-less devices have beenobtainedwithTiO2astheelectrontransportinglayer(ETL).

23,24Inthisstudy, itwasfoundthatthetypeofhysteresiseffectinprintable mesoscopic PSCs was highly dependent on theinterlayer of c-TiO2. Through controlling the deposition of c-TiO2 layer, we realized normal and inverted hysteresis effectfor such printable mesoscopic PSCs. Furthermore, theobserved hysteresis was uniquely different from the typicalhysteresis for PSCs as detailed previously, with the maindifferenceinJ-Vcurvesbetweenforwardandbackwardscansbeing the VOC, not JSCorFF. We analysed the trends of suchtunablehysteresiseffectbyconsideringthepolarizationofthe

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Fig.1Deviceconfigurationandcorrespondingworkingmechanismofatypical printable mesoscopic PSC. (a) Device architecture of FTO/c-TiO2/mp-TiO2/ZrO2/Carbon/Perovskite.Theperovskiteof(5-AVA)x(MA)1-xPbI3(5-AVA=5-ammoniumvalericacid)isinfiltratedinthemesoporouslayersof mp-TiO2,ZrO2andcarbonbysimpledrop-castingmethod.(b)Band energy diagram of printablemesoscopic PSCs. The electron-holepairs generated in the perovskite absorber separates by injecting theelectron into mp-TiO2 and transporting the holes to the carbonelectrodes.

c-TiO2/perovskiteinterface,andproposedthisphenomenonisassociated with the kinetics of accumulation andrecombinationof ionsandchargesat this interfaceduringJ-Vscans.

Atpresent,therehavebeenmanyreportsofhysteresis-lessPSCs that in cases have been obtained by combination ofexcellentbulkmorphologiesandmanipulationofthecontacts,oftenavoidingtheuseofmetal-oxides.13,25,26Inthiswork,weshow that robust devices fabricated with carbon holeextraction electrodes, still show a degree of dynamichysteresis that is completely controlled by the quality of thethin TiO2 contact layer. We relate the extent of hysteresisobservedindifferentconditionsofdynamicscansandwaitingtimes. Remarkably, the transient effects maintain the goodfeatures of photocurrent and the shape of J-V curves, butaffect mainly the apparent photovoltage. The results will beinterpretedintermsoftheinteractionofchargeaccumulationandrecombinationeffects, followingpreviousobservationsoftransient decays dependence on slow ionic kinetics.27 Theanalysis of photovoltage changes provides a generalstandpoint for understanding of the operation of contacts intheperovskitebasedphotovoltaics.

2.Results2.1Deviceconfigurationandworkingmechanism

The device architecture used in this study is shown in Fig.1a, where c-TiO2, mp-TiO2, ZrO2 and carbon layers aredepositedonasingleFTOglasssubstratelayerbylayerasthescaffoldfordepositingperovskiteabsorber.Typically, the threemesoporous layers have a thickness of ca. 1.0, 2.0 and 10.0µm, respectively.Amixed-cationperovskiteof (5-AVA)x(MA)1-xPbI3 (5-AVA=5-ammoniumvaleric acid) is infiltrated into thethree mesoporous layers as the light absorber, and no HTMlayer is needed in the device. The energy band alignment ofthedevice (Fig.1b)demonstrates that theelectron-holepairsgenerated in the perovskite absorber separates by injectingthe electron into mp-TiO2 and transporting the holes to thecarbon back contact.22 In this process, the ZrO2 layereffectively prevents the direct contact between TiO2 andcarbonlayer.Thec-TiO2layerpreventsthevalencebandholesin the perovskite from reaching the FTO-covered frontelectrode. With the construction of these selective contacts,the electrons generated in the perovskite absorber areeffectivelycollectedbytheETLofthemp-TiO2andtransferredto FTO front electrode via the c-TiO2, and the holes arecollected by the carbon back contact. Themp-TiO2 layer hasbeen considered mainly responsible for the hysteresis inconventional structured PSCs.13, 25 Particularly, the thickness,pore size and treatment process of the mp-TiO2 layer havebeen reported to influence the hysteresis of the devices.28-30Here, for printable mesoscopic PSCs using a 1-μm-thick mp-TiO2 layer, hysteresis-less devices have been fabricated andreported.22We consider themp-TiO2 scaffoldwith extremelylarge surface area is able to provide efficient pathways forelectron extraction and transportation rather than causechargeaccumulationandpossiblehysteresis.On thecontrary,for thec-TiO2 layer thatblockshole injection fromperovskite intoFTOlayer,itiscriticaltoachieveabalancebetweenrecombinationsuppressionandchargecarriertransportation.Wehavefoundthatthe properties of the c-TiO2 layer and corresponding interfacessignificantly affect the J-V hysteresis in the simplified triple-layerarchitecture based PSCs. For the deposition of c-TiO2 layer, wefirstlytreatedtheFTOglasssubstrateswithUV-Ozonefor2.5min,andthenemployedanaerosolspraypyrolysismethodtoprepareac-TiO2layerwithdifferentsprayingcycles(Fig.S1,ESI†).

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Fig.3Dependenceofphotovoltaicparametersonscandirectionsandscanrates.(a)hysteresis-normal,(b)hysteresis-freeand(c)hysteresis-invertedprintablemesoscopicPSCs.

2.2HysteresiseffectforprintablemesoscopicPSCsToevaluatethehysteresiseffectofthedevicesbasedonac-TiO2

layer with different spray deposition cycles, J-V curves weremeasured in forward scandirection (from reversebias to forwardbias, R-F) and backward scan direction (from forward bias toreversebias,F-R)undersimulatedAM1.5100mWcm-2sunlightatascanrateof250mVs-1.NotethatthescandirectionisindicatedR-ForF-R,andanywaitingtimeatRorFbiasisnoted.BeforeJ-Vscans,the devices were illuminated for several minutes, which canminimizetheinfluenceofthetrapstatesandobtainasteadystate.For typical J-V hysteresis phenomenon in PSCs, the photocurrentandefficiencyforF-RscanishigherthanthatforR-Fscan.When4or 3 spraying cycles of c-TiO2 layer was applied for printablemesoscopicPSCs,thesametrendwasobservedandwedefinedthiscaseashysteresis-normal(Fig.2a).Whenwereducedthesprayingcycles,itwasfoundthatthenormalhysteresiseffectcouldbefirstlyeliminated for 2 cycles (Fig. 2b), and then be inverted (Fig. 2c)completely for 1 cycle, which is regarded as tunable hysteresiseffectforprintablemesoscopicPSCs.Thecorrespondingdevicesarecodedashysteresis-normal,hysteresis-freeandhysteresis-inverted.Besidesthesprayingcyclesofc-TiO2 layer,suchtunablehysteresiseffectisalsorelatedtotheUV-Ozonetreatment(TableS1,ESI†).Itis important to remark that thedynamic hysteresis in our devicesmainly affects the apparent photovoltage, and as a consequencetheFF,whichindicatesthatrecombinationchangesoccurringalongthe dynamic scan might play a dominant role in the observedchanges.Furtherdetailsoninterpretationarepresentedinthelastsectionofthiswork.

The photovoltaic parameters of devices showing differenthysteresiseffectsaresummarizedinTable1.Generally,thedevicesfabricatedwith different cycles sprayed c-TiO2 layers show similarperformance, especially for the JSC and PCE. When the spraydepositioncyclewasreducedfrom4to1, theVOCdecreasedfrom

0.92V to 0.86V, and the FF increased from0.63 to 0.69. For theparametersmeasuredwithF-RandR-Fscans,themaindifferenceslieinVOCratherthanJSCorFF.ThisisquitedifferentfromthetrendoftypicalhysteresisphenomenonforPSCs.12

Besides scan directions, the scan rates also influence thehysteresis behaviors of PSCs. To investigate the rate-dependenthysteresiseffectof thedevices, thephotovoltaicparametersweremeasuredatascanrateof25mVs-1,50mVs-1,100mVs-1and250mVs-1,andcomparedinFig.3.Althoughtheparametersmeasuredat different scan rates varied, the differences between the valuesobtainedwithF-RandR-F scans stillprovideessential informationfor the hysteresis behaviors of printable mesoscopic PSCs. Forhysteresis-normaldevices(Fig.3a),thedifferenceinVOCforF-RandR-F scans reduced from ~70 mV to ~20 mV when the scan ratedecreasedfrom250mVs-1to25mVs-1,whilethedifferenceinJSC

Table1|Hysteresiseffect,photovoltaicparametersandhysteresiseffectindex(HEI)ofthedevicesfabricatedusingc-TiO2 layerwithdifferentspraydepositioncycles.

Hysteresis c-TiO2 Scan direction VOC (V) JSC (mA cm-2) FF PCE HEI

Normal 4 cycle F-R 0.92 21.32 0.64 12.60

0.0422±0.0068 R-F 0.85 21.30 0.63 11.52

Normal 3 cycle F-R 0.92 21.40 0.63 12.37

0.0171±0.0054 R-F 0.89 21.33 0.63 11.87

Free 2 cycle F-R 0.91 21.40 0.65 12.77

0.0010±0.0035 R-F 0.91 21.45 0.65 12.78

Inverted 1 cycle F-R 0.86 22.14 0.66 12.55

-0.0434±0.0093 R-F 0.88 21.51 0.69 13.15

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Fig. 4 Dependence of hysteresis effect index (HEI) (a) on c-TiO2 layerspraydepositioncyclesand(b)onscanningratesforhysteresis-normal,hysteresis-freeandhysteresis-inverteddevices.

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Fig.5Functionsofc-TiO2layerinprintablemesoscopicPSCsandcapacitanceanalysisofthedevices.(a)Electronandholeseparation/transportationinFTO/mp-TiO2/ZrO2/perovskite,andFTO/c-TiO2/mp-TiO2/ZrO2/perovskite.(b)AFMimagesofbareFTOsubstrateandc-TiO2sprayedFTOsubstrate.(c-e)darkJ-Vcurvesatroomtemperatureinlogarithmscaledcurrentrepresentationatdifferentscanratesforhysteresis-free,hysteresis-normalandhysteresis-inverteddevices.Thearrowsinverticalscaleindicatethedirectionofincreasingcurrent,eitherpositiveornegative.

increasedslightly.FortheoverallPCE,F-RatallscanratesledtoahighervaluethanR-F.Forhysteresis-freedevices(Fig.3b),F-RandR-FscansshowedalmostthesamephotovoltaicparametersofVOC,JSC, FF and PCE at all different scan rates, though the valuesdecreased slightly when the scan slowed down. For hysteresis-inverted devices (Fig. 3c), R-F scan resulted in higher VOC and FFwhile lower JSC than F-R scan, leading to higher PCE, and thedifferencebetweenR-FandF-Rscansdidnotchangemuch forallthescanrates.

Series resistance (RS) and shunt resistance (RSH) of deviceswithdifferent hysteresis behaviors are also summarized in Table S2(ESI†)andcomparedinFigureS2(ESI†).AllRSslightlydecreasedasthe scan rate increased from 50 to 250 mV s-1, while RSH showsmuch more stable values as scan rates increased. Particularly,hysteresis-free devices showed slightly larger RS, but similar RSH,compared with hysteresis-normal and hysteresis-inverted devicesindependentlyofthescanrates.ForRSandRSHmeasuredatF-RandR-F scans, hysteresis-normal and hysteresis-inverted devicesshowed similar RS, but larger RSH at F-R scans. Hysteresis-freedevicesshowedsimilarRSH,butsmallerRSatF-Rscans.

2.3Hysteresisindexcharacterization

AhysteresisindexhasbeendefinedtodescribethedifferencesinJ-V curves appearing near open-circuit condition.28 In our case,sincethehysteresishasbeeninvertedcausingtheR-Fscantoshowhigher current density and overall performance, a modified J-Vhysteresiseffectindex(HEI)isdefinedbyequation1.

(0.8 ) (0.8 )

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whereJRS(0.8Voc)andJFS(0.8Voc)representcurrent-densityat80%ofVOCfor F-R and R-F scans, respectively. Even though our observationsdiffermarkedlyfortheearlyobservationsthatleadtothedefinitionofHEI intermsofcurrentdifference,15theHEIshowninFig.4stillservestoillustratetheconsistentevolutionofJ-Vcurvesdependingon the changes of the TiO2 compact layer. For hysteresis-normaldevices, the JRS(0.8VOC) is higher than JFS(0.8VOC), leading to a positiveHEI value. On the contrary, hysteresis-inverted devices shownegativeHEI values, as shown inTable1. The reductionof c-TiO2spraydepositioncyclesresultedinsignificantdecreaseofHEIfrompositive values of 0.0422 and 0.017 to 0.001, then to a negativevalue of -0.0434 (Fig. 4a). The transition of HEI from hysteresis-normaltohysteresis-invertedisalmostlineartothespraydepositioncycles of c-TiO2. Due to the relatively stable JSC at different scanrates, the HEI values of all the three types of devices also stayedalmostunchangedasthescanratedecreased(Fig.4b).Consideringthat such printable mesoscopic PSCs show different trends forhysteresiseffect,thevariationsinVOCprovidemorekeyinformationforanalysingsuchtunablehysteresisforprintablemesoscopicPSCs.

2.4Characterizationofc-TiO2layer

Ionmigrationwith the perovskite film, high trap-state density forcharge carriers at the perovskite surface and unbalanced chargecarrier transport have been considered as the origins of thehysteresiseffectforPSCs.3,27,28Greateffortshavebeenmadetodevelop deposition methods that are able to obtain high-qualityperovskitecrystals.Typically,perovskitelayerswithlargegrainsize,uniformmorphologyandappropriatecompositionwillpossesslowdefect density and show restricted ion migrations, which enablehysteresis-free/lessdeviceswithvariousarchitectures.25,31,32Inourcase,theformationoftheperovskitecrystalswasfirstlytemplatedby5-AVAcationswithpreferentialgrowth inthenormaldirection,and then hosted by the scaffold of TiO2/ZrO2/Carbon triple-layer.Thus,thehysteresiseffectoriginatingfromthequalityofperovskitecrystals has been minimized. Considering the remarkable devicestability under working conditions, we propose that the J-Vhysteresis effect in our devices is mainly due to the chargeaccumulation at the interfaces rather than composition change inthe perovskite crystals, which would cause severe performancedegradation of the devices.33,34 In printablemesoscopic PSCs, themp-TiO2collectsandtransfertheelectronsastheETL,whilec-TiO2layerworksasaselectivecontactlayerthattransportselectronsbutblocks holes.Without a c-TiO2 layer, the perovskite absorber willdirectly contactFTO frontelectrode, resulting in significantchargerecombination and voltage loss for the device (Fig. 5a).Unfortunately,theelectronmobilityofTiO2isonlyabout10

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-2– 100 cm2V-1s-1).37 Thus, it was proposedthatthemp-TiO2 layer inconventionalstructuredPSCswould limittheelectron transport,andcausecapacitivehysteresis.38,39Hereinwe show that the hysteresis in c-TiO2 andmp-TiO2 based PSCs is

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mainlydependentonthec-TiO2layerandassociatedinterfaces,notonthemp-TiO2layer.

Asweshow later, thec-TiO2 surfacemeets theperovskite layerand here the ionic and electronic carriers find a barrier andestablish essential charge accumulation and bandbending thatwhencombinedwithsurfacerecombinationratesplayakeyroleinthe apparent voltage in transient conditions. In addition, theaccumulation of electrons at the thin c-TiO2 itself is also animportant factor tocontrol themeasuredvoltage.Theseelementswill form the main considerations in our model, which motivatesfurtheranalysisofthestructureofthec-TiO2layer.

It should be noted that the deposition of c-TiO2 layer betweenmp-TiO2andFTOlayersalsoimprovethecontactandfacilitatethecharge transfer at the interfaces. Atomic forcemicroscope (AFM)and scanning electron microscope (SEM) measurements wereperformedtounravelthedifferencesofthesurfacemorphologyofbareandc-TiO2 sprayedFTOsubstrates (Fig.5bandFig.S3†).TheFTOsubstratepossessedapolyhedroncomposedmorphologywitharoot-mean-square(RMS)roughnessof15.12nm.Aftersprayingac-TiO2 layer, the surface turned to be composed of sphere-shapeparticlesandtheroughnessdecreasedslightlyto14.18nm.Duetothe rough surface of FTO layer, we cannot accurately obtain thethicknessofthec-TiO2layersprayedonFTOsubstrateswith1to4cycles.Instead,wesprayedthec-TiO2layeronasiliconwaferwith8cycles,andmeasureditsthicknessbyaprofilometer.Thethicknessof the c-TiO2 layer was 52.7±5.50 nm. Thus, we suppose thethicknessofc-TiO2layerssprayedwith1-4cycleswas6.59±0.69nm,13.18±1.37nm,19.76±2.06nmand26.35±2.75nm,respectively.ItisexpectedthattheFTOparticlesarewrappedbyanultra-thinTiO2film, and this can be regarded as an interfacemodification ratherthanformationofanextrainterlayer.

XPSmeasurementswerecarriedouttoinvestigatetheTielementin the 1-4 cycle c-TiO2 sprayed FTO substrates. The Ti peak areasweresummarizedandcomparedusingSnpeakasareferencepeak.The Ti/Sn ratio increased significantly from1.581 to 3.93, then to10.3and22.1for1-4cyclec-TiO2spraying(Fig.S4,ESI†).Inaddition,

the work function of the c-TiO2 sprayed FTO substrates werecharacterized,which decreased slightly from 4.79 eV for the bareFTO to 4.45-4.62 eV for the 1-4 cycle c-TiO2 sprayed FTO (Fig. S5,ESI†).Theinfluenceofthec-TiO2layeronthechargeextractionwasinvestigated by time-resolved photoluminescence (TRPL) spectra(Fig.S6,ESI†).Semi-devicesofFTO/c-TiO2/mp-TiO2/ZrO2/Perovskitewere fabricated with 1-4 cycles sprayed c-TiO2 layer. A very fastdecayfollowedbyaslowerdecaywasobservedforallsamples,asalso observed elsewhere.40 The curves were fitted by abiexponential decay function, and the results are summarized inTableS3. Itwas foundthatτ1andτ2arealmost identicalas thec-TiO2 spraying cycles increased, indicating thicker c-TiO2 layer doesnotsignificantlymodifythechargeextractionofthec-TiO2/mp-TiO2bilayer.Removeref42

2.5Capacitivehysteresischaracterization

Capacitanceanalysisofvoltagesweepunderdarkwasperformedtoinvestigatethecapacitivehysteresiseffect inprintablemesoscopicPSCs (Fig. 5c-e), whichwas proposed to be caused by the chargeaccumulation at the TiO2/perovskite interface.

38, 39 The voltagevariation,ΔV,appliedtothesolarcellproducesatransientresponsebefore reaching the steady state. The time interval Δt betweenappliedvoltagestepsmightbeshorterthanthetimeofrelaxation.In the cases in which charging process occurs, an additionaltransient current is expected to be observed caused by the timevariation of the accumulated charges. Furthermore, capacitivecurrents should vanish as the scan rate approaches steady-stateconditions. For the hysteresis-normal device (Fig. 5d), significantcapacitivehysteresiswasobservedalongwith similardark currentdensity with hysteresis-free and hysteresis-inverted devices at aforward (positive) bias. When spraying cycles for c-TiO2 layerdecreased from 4 to 1, the capacitive hysteresis effect firstlyvanished(Fig.5c),andthencameback(Fig.5e).Thedarkcapacitivetrends indicate a strong polarization may exist at the c-TiO2/perovskite interface,

38whichcanhaveasignificant impactonthehysteretictrendsunderillumination.

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2.6Effectofdelaytime

Asmentioned in the previous section, for the hysteresis effect ofprintablemesoscopicPSCs,themaindifferencebetweenF-RandR-Fscans lies inVOC rather than JSCorFF.Thus,wesummarizedandcomparedtheVOCforF-RandR-Fscans,presentedas[VOC(F-R)-VOC(R-F)] versus scan rates in Fig. 6. Notably, we found the intervalsand sequence between J-V scans also influence the deviceperformance,which canprovideuswith somekey information. InthiscasetheVOCwasmeasuredbysequentialscanswithintervalof0sor60sat250mVs-1,100mVs-1,50mVs-1and25mVs-1firstlyinF-Rdirection,and then inR-Fdirection.ThedependenceofVOConscanratesisshowninFig.S7(ESI†).

Withoutanydelay(intervalof0s)betweenscans,[VOC(F-R)-VOC(R-F)]decreasedasthescanratesloweddownfrom250mVs-1 to25mV s-1 for hysteresis-normal and hysteresis-free devices,whileincreased for the hysteresis-inverted device. Remarkably, in thiscondition, the hysteresis-inverted device showed higher VOC andPCE for F-R scans. In other words, this hysteresis-inverted deviceshowed normal hysteresis effect. When an interval of 60 s wasapplied between the scans, the evolution of the VOC changedsignificantly. For hysteresis-normal and hysteresis-free devices,[VOC(F-R)-VOC(R-F)] increasedasthescanratesloweddown,whichshowed completely opposite trends against the results obtainedwithintervalof0s.Significantly,thevaluesof[VOC(F-R)-VOC(R-F)]forhysteresis-inverted device became negative, and was consistentwiththeresultsdiscussedintheprevioussection.

3.DiscussionSincetheVOCisthemainphotovoltaicvariablemodifiedinthetypeof hysteresis in our cells, themechanismsof hysteresis cannot beexplained based on the models of charge collection presentlydominant in the literature. The observation of a consistent JSCirrespective of scan rate and direction indicates that chargetransport and extraction is identical at low F biases, pointing to apreferentialrecombinationmechanismat largeFbiases,modifyingthe output voltage. In consideration of the above arguments, weexplain the trends observed by considering the dominantcontribution of the c-TiO2/perovskite interface. Fig. 7 provides apictureofthechargeaccumulationandpolarizationfeaturesattheinterface. The formation of an accumulation of cations andelectronic holes at the c-TiO2/perovskite interface underilluminationhasbeendiscussed42andisshowninFig.7c.Notethatthe morphology of the mesoporous layer is neglected as it isassumedthatrathernarrowbandbendingoccursattheperovskiteside. This accumulation of cations and electronic holes in astabilizedsituationcreatesexcesspotentialatthec-TiO2/perovskiteinterface that enhances VOC. It also serves as a strong source ofsurface recombination, by electrons coming from the TiO2 side ofthecontact.

Slowkineticfeaturesresultinhysteresispatternsthataremainlyinducedbythesluggishionicdynamics,asalreadyremarkedonthecapacitiveresponseinFig.5.TheionicdisplacementiscompletedatFvoltageatthestartofanF-Rscan,causingthelargeaccumulation,Fig.7c,which isalmostasteady-statevaluethat isnotmodulatedbyionicdriftrates.Contrarily,fortheR-Fscan,theaccumulationisdelayed,whichcreatesanasymmetryofVOCvalues.InanR-Fscan,theionsaremovedawayatRbias,sothatthevoltagecannotreachthe same value as that of the F-R scan, explaining the normalhysteresis. It is noted from Fig. 2 that the F-R VOC is identical for

normalhysteresisandhysteresis-freedevicesbutisreducedby~50mVfortheinvertedhysteresissamples.Thisindicatesthatanothermajor factor to consider in the variation of photovoltage is theamountofrecombination,ascommentedbefore.Forthinnerc-TiO2layer, the covering of FTO may be incomplete, facilitatingrecombinationofsurfaceelectronsas indicatedinFig.7c.(process4).TheR-FscanVOC is increasedby~70mVforthehysteresis-freeandinvertedhysteresisdevices.Thisisalsoattributedtothelargerwork function of the thin c-TiO2 layers (Fig. S5, ESI†), creatingsmallerbuilt-inpotentialfortheperovskite,whichallowsforlargeraccumulationatagivenFvoltage intheR-Fscan.Forthe invertedhysteresis devices, the large R-F voltage is sustained likely due tothesluggishkineticsofthesurfacerecombinationindicatedin(4)inFig. 7c. The improved R-FVOC values contribute to the hysteresis-free behavior, and in conjunction with the VOC drop in the F-Rdirectionforaverythinc-TiO2 layer,yields the invertedhysteresistrend in our samples. TRPL analysis showed that the kinetics ofchargeextractionisrathersimilarinthedifferentthicknesscasessothatdifferencesofinterfacialkineticsdoesnotappearasignificantfactorcontrollingthechangesofhysteresispattern.

Wenowproceed toexplain the rich varietyofbehaviorsof thedependenceofVOConthescanrates(Fig.3)andwaitingtimes(Fig.S7,ESI†).FortheF-Rscan,theaccumulatedpositivechargesatthesurface at steady state recombine immediately upon cycling thevoltage. Therefore, faster scans provide a larger VOC in the F-Rdirection. Thisisobservedforalldevices,irrespectiveofthetypeofhysteresis, Fig. 3. The effect of waiting time under illumination isidentical, where the accumulation is enhanced due to thephotogenerated carriers, providing larger output voltages in alldevicesexceptthehysteresis-inverteddevices.Thiscouldoccurduetotheincreasedsurfacerecombinationofphotogeneratedcarriersfor very thin c-TiO2 layers previously described. For theR-F scans,theVOCimprovesforfasterscanratessincethepositiveionsdonot

Fig. 7Schematicdiagramof thec-TiO2 (blue layer)/perovskite (orangefilm)interfaceindicatingtheprocessesgoverningtheVOC.Weconsiderap-typeperovskiteatshortcircuitconditionshownin(a)withabuilt-inpotential at the perovskite/c-TiO2 interface (electrons represented inred, holes and cations in blue and green respectively). (b) The PSCunderanappliedforwardbias.Process1 indicatesthekineticsofdriftofcationsandholestowardstheinterface.(c)ThePSCatlargeforwardbias (VOC). The accumulation of cations and holes at the interfacecreatesanupwardbandbendingwhichcanbedescribedbyasurfacevoltage Vs represented in 2. These accumulated charges can act as apreferentialzoneforbothrecombinationwithelectronsinthebulk(3)and in the c-TiO2/FTO region. Recombination pathway 4 cruciallydependent on the thickness of the c-TiO2 layer, and is the dominantmechanism controlling recombination rates of accumulated chargesandtheoutputVOCinatransientscan.

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have enough time to drift away from the c-TiO2 layer, therebyimprovingtheVOC.Theeffectofwaitingtimeunder illumination isfor the photovoltage to drive positive ions towards the c-TiO2,therebyfacilitatingaccumulationandalsoenhancedVOCduringtheRFscan.

In summary,weobserve that the interplayof slowdynamicsofcharge accumulation and changes of recombination rates explainstheobservedhysteresispatterns.HysteresisinPSCsisregardedasacombinationof processes inherent to theoperationof this deviceandnotasingleeffectthatcanberemoved.However,highqualityof materials and interface do minimize the influence of dynamichysteresis,whichmainlyaffects thephotovoltageaccordingto thescanningprocedure.

ConclusionsWehaveidentifiedatunablehysteresiseffectconsistingofVOCvariations where the type of hysteresis can be altered solelythroughmodificationofthec-TiO2layer.Thetrendsoftunablehysteresis effect are considered here to be caused by thepolarization of the c-TiO2/perovskite interface, and is relatedto the kinetics of accumulation of positive charges at thisinterface during J-V scans, in combinationwith the extent ofsurface recombination. The nature and properties of the c-TiO2/perovskite interface are critical for the recombinationrates of accumulated charges at this interface, which is thedominantmechanism controlling the hysteretic trends in thePSCs. The demonstration of such tunable hysteresis effect inprintable mesoscopic PSCs shows that the properties of c-TiO2/perovskite interfacearecrucial forcontrollingthedeviceperformancemetrics.Weshowedthathysteresis-freedevicescan be formed by adapting specific conditions of the contactfrom a broad range of possibilities, and that hysteresis-freedevices may not coincide with optimal solar cell operation.Therefore,wesuggestthatunderstandingthephenomenonofhysteresis is necessary for a better control of PSCsmaterialsandinterfaces.

AcknowledgementsTheauthorsacknowledge financial support from theNationalNatural Science Foundation of China (91433203, 61474049,51502141,21702069),theMinistryofScienceandTechnologyof China (2015AA034601), the 111 Project (No. B07038), andthe China Postdoctoral Science Foundation (2016M600588).We also acknowledge funding from MINECO of Spain underProject MAT2016-76892-C3-1-R and Generalitat ValencianaProjectPROMETEOII/2014/020.S.R.acknowledgesGeneralitatValencianaforthegrant(GRISOLIA/2014/034).

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