2sk2903-01mr
DESCRIPTION
2SK2903-01MRTRANSCRIPT
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1Item Symbol Rating UnitDrain-source voltage VDS 60Continuous drain current ID 50Pulsed drain current ID(puls] 200Gate-source voltage VGS 30Maximum Avalanche Energy EAV *1 720.8Max. power dissipation PD 50Operating and storage Tch +150temperature range Tstg
Electrical characteristics (Tc =25C unless otherwise specified)
Thermalcharacteristics
2SK2903-01MR FUJI POWER MOS-FETN-CHANNEL SILICON POWER MOS-FET
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Equivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)
Gate(G)Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=60V
VGS=30V ID=40A VGS=10VID=40A VDS=25V
VCC=30V ID=80AVGS=10VRGS=10 W
Min. Typ. Max. UnitsVVAmAnAmWSpF
AVns
C
ns
Min. Typ. Max. UnitsThermal resistance
Rth(ch-c) channel to caseRth(ch-a) channel to ambient
2.5 62.5
C/WC/W
SymbolBVDSSVGS(th)
IGSSRDS(on)gfsCissCossCrsstd(on)trtd(off)tfIAVVSDtrrQrr
ItemDrain-source breakdown voltagetGate threshold voltage
Gate-source leakage currentDrain-source on-state resistanceForward transcondutanceInput capacitanceOutput capacitanceReverse transfer capacitanceTurn-on time ton
Turn-off time toff
Avalanche capabilityDiode forward on-voltageReverse recovery timeReverse recovery charge
Test ConditionsID=1mA VGS=0VID=10mA VDS=VGS Tch=25CVGS=0V Tch=125C VDS=0V
VDS=25VVGS=0Vf=1MHz
L=100 H Tch=25CIF=50A VGS=0V Tch=25CIF=50A VGS=0V-di/dt=100A/s Tch=25C
V A A V mJ WCC
*1 L=0.384mH, Vcc=24V
602.5 3.0 3.5
10 5000.2 1.0
10 1009.5 12
20 403100 46501300 1950350 530
20 3085 12088 13065 120
501.0 1.5
700.13
-55 to +150
TO-220F15
3. Source
2.54
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2Characteristics
2SK2903-01MR FUJI POWER MOSFET
0 50 100 1500
10
20
30
40
50
60
Power DissipationPD=f(Tc)
PD [W
]
Tc [C]10-1 100 101 102 103
10-1
100
101
102
103
ID [A
]VDS [V]
Safe operating areaID=f(VDS):D=0.01,Tc=25C
t=
1s10s
1ms
10ms
100ms
100s
D.C.
tT
D=
t
T
0 1 2 3 4 50
50
100
150
200
6.0V
5.5V
4.0V
3.5V
4.5V
10V
8V
5.0V
VGS=20V
Typical output characteristicsID=f(VDS):80s pulse test,Tc=25C
ID [A
]
VDS [V]0 2 4 6 8 10
0.1
1
10
100
Typical transfer characteristicsID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A
]
VGS [V]
100 101 102 103100
101
102
103
Typical forward transconductancegfs=f(ID):80s pulse test,VDS=25V,Tch=25C
gfs
[s]
ID [A]0 50 100 150 200
0
10
20
30
40
50
6V
RD
S(on
) [m W
]
ID [A]
Typical Drain-Source on-State ResistanceRDS(on)=f(ID):80s pulse test,Tch=25C
8V10V20V
4.5V 5.0V4.0V
VGS=3.5V
5.5V
-
30 20 40 60 80 100 120 1400
5
10
15
20
25
12V30V
Vcc=48V
Typical Gate Charge CharacteristicsVGS=f(Qg):ID=80A,Tch=25C
0
10
20
30
40
50
VDS
[V]
VGS [V]
Qg [nC]
VGS
VDS
10-1 100 101 102101
102
103
104
t [ns]
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. IDt=f(ID):Vcc=30V,VGS=10V,RG=10 W
2SK2903-01MR FUJI POWER MOSFET
-50 0 50 100 1500
5
10
15
20
25
30
max.
typ.
Drain-source on-state resistanceRDS(on)=f(Tch):ID=40A,VGS=10V
RD
S(on
)[m W
]
Tch [C]-50 -25 0 25 50 75 100 125 1500.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(
th) [V
]Tch [C]
Gate Threshold Voltage vs. TchVGS(th)=f(Tch):VDS=VGS,ID=10mA
min.
typ.
max.
10-2 10-1 100 101 102100p
1n
10n
100n
Typical capacitancesC=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
20
40
60
80
100
120
140
160
180
200
Typical Forward Characteristics of Reverse DiodeIF=f(VSD):80s pulse test,Tch=25C
10V 5V VGS=0V
IF [A
]
VSD [V]
-
42SK2903-01MR FUJI POWER MOSFET
0 50 100 1500
10
20
30
40
50
60
Maximum Avalanche Current vs. starting TchI(AV)=f(starting Tch)
I(AV)
[A]
Starting Tch [C]
0 50 100 1500
200
400
600
800
Maximum Avalanche energy vs. starting TchEas=f(starting Tch):Vcc=24V, I(AV)
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