advances in materials problem solving with the electron...

Advances in MaterialsProblem Solving With the

Electron Microscope

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Cambridge University Press978-1-107-41335-1 - Materials Research Society Symposium Proceedings: Volume 589:Advances in Materials Problem Solving with the Electron MicroscopeEditors: Jim Bentley, Charles Allen, Uli Dahmen and Ivan PetrovFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 589

Advances in MaterialsProblem Solving With the

Electron Microscope

Symposium held November 30-December 3, 1999, Boston, Massachusetts, U.S.A.

EDITORS:

Jim BentleyOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.

Charles AllenArgonne National Laboratory

Argonne, Illinois, U.S.A.

Uli DahmenLawrence Berkeley National Laboratory

Berkeley, California, U.S.A.

Ivan PetrovUniversity of Illinois

Urbana, Illinois, U.S.A.

IMIRIS1Materials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xiii

Materials Research Society Symposium Proceedings xiv

MAGNETIC MA TERIALS

*Microstructural Characterization of Longitudinal MagneticRecording Media 3

Robert Sinclair, Dong-Won Park, Claus Habermeier, and Kai Ma

Electron Holography of Nanostructured Magnetic Materials 13R.E. Dunin-Borkowski, B. Kardynal, M.R. McCartney,M.R. Scheinfein, and David J. Smith

Flux Mapping and Magnetic Behavior of Grain Boundaries in Nd-Fe-BMagnets 19

V.V. Volkov and Yimei Zhu

CRYSTALLOGRAPHY AND DEFECTS

*LEEM Investigations of bcc Metals Grown Heteroepitaxially onSapphire 27

W. Swiech, M. Ondrejcek, R.S. Appleton, C.S. Durfee,M. Mundschau, and C.P. Flynn

^Electron Backscatter Diffraction: A Powerful Tool for PhaseIdentification in the SEM 39

J.R. Michael and R.P. Goehner

Measuring the Thin Film Strain Tensor Near Aluminum GrainBoundaries via a New Image Processing Approach to CBEDHOLZ Patterns 51

J. Inoue, A.F. Schwartzman, and L.B. Freund

*Controlled Environment Transmission Electron Microscopy 57I.M. Robertson

* Invited Paper






Analysis of the Atomic Scale Defect Chemistry in OxygenDeficient Materials by STEM 69

Y. Ito, S. Stemmer, R.F. Klie, N.D. Browning, A. Sane,and T.J. Mazanec

Energy Dispersive X-ray Spectrometry With the Transition EdgeSensor Microcalorimeter: A Revolutionary Advanced in MaterialsMicroanalysis 75

Dale Newbury, David Wollman, Kent Irwin, Gene Hilton,and John Martinis

Surface Sensitivity Effects With Local Probe Scanning Auger-ScanningElectron Microscopy 81

D.T.L. van Agterveld, G. Palasantzas, and J.Th.M. De Hosson

X-ray Elemental Mapping of Multi-Component Steels 87Adam J. Papworth and David B. Williams

High Sensitivity Convergent Beam Electron Diffraction for theDetermination of the Tetragonal Distortion of Epitaxial Films 93

C. Schuer, M. Leicht, T. Marek, and H.P. Strunk

Determination of Coherency Strain Fields Around CoherentParticles in Ni-Al Alloys by HREM and CBED 99

H.A. Calderon, L. Calzado, C. Kisielowski, C.Y. Wang, andR. Kilaas

An Electron Microscope Study of Diffusion Assisted DislocationProcesses in Inter metallic Gamma TiAl 105

F. Appel, U. Lorenz, and M. Oehring

Specimen Current Imaging of Delamination in Ceramic Filmson Metal Substrates in the SEM I l l

S. Rangarajan and A.H. King

In Situ Observation of Melting and Solidification 117H. Saka, S. Arai, S. Muto, H. Miyai, and S. Tsukimoto

Site Occupancy Determination by ALCHEMI of Nb and Cr inY-TiAl and Their Effects on the a to y Massive Phase Transformation 123

T.M. Miller, L. Wang, W.H. Hofmeister, J.E. Wittig, andI.M. Anderson






Electron Channeling X-ray Microanalysis for Cation Configurationin Irradiated Magnesium Aluminate Spinel 129

S. Matsumura, T. Soeda, NJ. Zaluzec, and C. Kinoshita

In Situ Study of Zirconia Stabilization by Anion Exchange(N for O) Using High-Temperature, Controlled AtmosphereElectron Diffraction 135

Renu Sharma, Eberhard Schweda, and Dirk Naedele

Environmental Scanning Electron Microscopy as a Tool toStudy Shrinkage Microcracks in Cement-Based Materials 141

J. Bisschop and J.G.M. van Mier

Microcharacterization of Heterogeneous Specimens ContainingTire Dust 147

Marina Camatini, Gaia M. Corbetta, Giovanni F. Crosta,Tigran Dolukhanyan, Giampaolo Giuliani, and Changmo Sung

MICROELECTRONIC MA TERIALS

Experimental Methods and Data Analysis for Fluctuation Microscopy 155P.M. Voyles, M.M.J. Treacy, J.M. Gibson, H-C. Jin, andJ.R. Abelson

Microdiffraction, EDS, and HREM Investigation for Phase IdentificationWith the Electron Microscope 161

P. Ruterana and A. Redjaimia

Energy-Loss Filtered Imaging of Segregation-Induced InterfaceBroadening in SiGe/Si p-Channel MOSFET Device Structures 167

D.J. Norris, A.G. Cullis, T.J. Grasby, and E.H.C. Parker

Atomic-Scale Imaging of Dopant Atom Distributions Within

Silicon 5-Doped Layers 173R. Vanfleet, D.A. Muller, H.J. Gossmann, P.H. Citrin, andJ. Silcox

In Situ Annealing Transmission Electron Microscopy Study ofPd/Ge/Pd/GaAs Interfacial Reactions 179

F. Radulescu, J.M. McCarthy, and E.A. Stach

Incoherent High-Resolution Z-Contrast Imaging of Silicon andGallium Arsenide Using HAADF-STEM 185

Y. Kotaka, T. Yamazaki, Y. Kikuchi, and K. Watanabe






The Atomic Structure of Mosaic Grain Boundary Dislocations inGaN Epitaxial Layers 191

V. Potin, G. Nouet, P. Ruterana, and R.C. Pond

Interface Structure and Zn Diffusion in the CdTe/ZnTe/Si SystemGrown by MBE 197

S-C.Y. Tsen, David J. Smith, P.A. Crozier, S. Rujirawat,G. Brill, and S. Sivananthan

Relationship Between Structure and Luminescent Properties ofEpitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates 203

H-J. Gao, G. Duscher, X.D. Fan, S.J. Pennycook, D. Kumar,K.G. Cho, P.H. Holloway, and R.K. Singh

PARTIALLY ORDERED ANDNANOPHASE MATERIALS

Imaging Heterophase Molecular Materials in the Environmental SEM 211B.L. Thiel, A.M. Donald, D.J. Stokes, I.C. Bache, andN. Stelmashenko

A New Approach Towards Property Nanomeasurements Using In Situ TEM 217Z.L. Wang, P. Poncharal, W.A. de Heer, and R.P. Gao

Electron Microscopy of Single Molecules 223D.E. Luzzi and B.W. Smith

Nanocrystal Thickness Information From Z-STEM: 3-D Imaging inOne Shot 229

A.V. Kadavanich, T. Kippeny, M. Erwin, S.J. Rosenthal, andS.J. Pennycook

Epitaxy and Atomic Structure Determination of Au/TiC>2 Interfacesby Combined EBSD and HRTEM 235

F. Cosandey and P. Stadelmann

Theoretical Explanation of Pt Trimers Observed by Z-Contrast STEM 241Karl Sohlberg, Sokrates T. Pantelides, and Stephen J. Pennycook

Ion-Implanted Amorphous Silicon Studied by Variable Coherence TEM 247J-Y. Cheng, J.M. Gibson, P.M. Voyles, M.M.J. Treacy, andD.C. Jacobson






Analytical High-Resolution TEM Study on Au/TiO2 Catalysts 253T. Akita, K. Tanaka, S. Tsubota, and M. Haruta

High-Resolution Scanning Electron Microscopy and Microanalysisof Supported Metal Catalysts 259

Jingyue Liu

On-Particle EDS Analysis of Bimetallic, Carbon-Supported Catalysts 265Deborah L. Boxall, Edward A. Kenik, and Charles M. Lukehart

INTERFACES IN METALSAND CERAMICS

Structure Refinement of S-Phase Precipitates in Al-Cu-Mg Alloysby Quantitative HRTEM 273

R. Kilaas, V. Radmilovic, and U. Dahmen

^Quantitative Mapping of Concentrations and Bonding States byEnergy Filtering TEM 279

J. Mayer and J.M. Plitzko

Combined HRTEM and EFTEM Study of Precipitates in Tungstenand Chromium-Containing TiB2 289

W. Mader, B. Freitag, K. Kelm, R. Telle, and C. Schmalzried

High Spatial Resolution X-ray Microanalysis of Radiation-InducedSegregation in Proton-Irradiated Stainless Steels 295

E.A. Kenik, J.T. Busby, and G.S. Was

Investigation of Copper Segregation to the Z5(310)/[001] SymmetricTilt Grain Boundary in Aluminum 301

Jiirgen M. Plitzko, Geoffrey H. Campbell, Wayne E. King, andStephen M. Foiles

STEM Analysis of the Segregation of Bi to Z19a Grain Boundaries in Cu 307W. Sigle, L-S. Chang, W. Gust, and M. Ruhle

^Investigating Atomic Scale Phenomena at Materials Interfaces WithCorrelated Techniques in STEM/TEM 311

N.D. Browning, A.W. Nicholls, E.M. James, I. Arslan, Y. Xin,K. Kishida, and S. Stemmer

•Invited Paper

IX






Atomic Scale Analysis of Cubic Zirconia Grain Boundaries 323E.C. Dickey, X. Fan, M. Yong, S.B. Sinnott, and S.J. Pennycook

SEM/EDX Spectrum Imaging and Statistical Analysis of aMetal/Ceramic Braze 329

Paul G. Kotula, Michael R. Keenan, and Ian M. Anderson

Characterization of the Interface Between Lanthanum Hexa-Aluminateand Sapphire by Exit Wave Reconstruction 335

B. Wessler, A. Steinecker, and W. Mader

Atomic and Electronic Structure Analysis of £=3,9 and 27 Boundary,

and Multiple Junction in P-SiC 341K. Tanaka and M. Kohyama

Electronic Effects on Grain Boundary Structure in bcc Metals 347Geoffrey H. Campbell, Wayne E. King, James Belak,John A. Moriarty, and Stephen M. Foiles

Structural Study of a [100] 45° Twist Plus 7.5° Tilt Grain Boundary inAluminium by HREM 353

M. Shamsuzzoha, P.A. Deymier, and David J. Smith

Atomic Structure of Gold and Copper Boundaries 359C.J.D. Hetherington

Formation of A1N Films on Ti/TiN Arc-Layer Interface With Al-0.5%CuInterconnects Evaluated by XPS and Energy-Filtered-TEM 365

J. Gazda, J. Zhao, P. Smith, and R.A. White

Effects of "As Deposited" and Alloying Temperatures on theDistribution of Cu in 0.5%Cu-Al Films 371

P.L. Smith and J. Gazda

Interfacial Interaction Between Cr Thin Films and Oxide Glasses 377N. Jiang and J. Silcox

Characterization of Intergranular Phases in Doped ZirconiaPolycrystals 383

N.D. Evans, P.H. Imamura, J. Bentley, and M.L. Mecartney






The Effect of Different Oxidizing Atmospheres on the InitialKinetics of Copper Oxidation as Studied In Situ UHV-TEM 389

Mridula D. Bharadwaj, Anu Gupta, J. Murray Gibson,and Judith C.Yang

Bonding in Ion-Implanted Carbon Films Characterized by TEMSpectrum Lines and Energy-Filtered Imaging 395

J. Bentley, K.C. Walter, and N.D. Evans

Author Index 401

Subject Index 403






PREFACE

Symposium Q, "Advances in Materials Problem Solving With the Electron Microscope,"was held November 30-December 3 at the 1999 MRS Fall Meeting in Boston, Massachusetts.More than 100 papers were presented in ten sessions including four poster sessions. Thesessions were well attended and the discussions were lively.

The symposium was motivated by the remarkable advances that continue to be made inelectron microscope instrumentation and techniques for applications to materials science.Characterization problems can now be tackled that were beyond reach just a few years ago. Theadvances include quantitative high resolution imaging, atomic-resolution Z-contrast imaging,elemental mapping by energy-filtered TEM or spectrum imaging, atomic resolution EELS forcomposition and bonding, quantitative CBED, site occupancy determination by ALCHEMI,electron holography, EBSP in the SEM for phase identification and orientation imagingmicroscopy, low-voltage microanalysis of bulk specimens, and in-situ experiments of dynamicphenomena. The aim of the symposium was to emphasize how these recent developments inelectron microscopy are being used to solve materials problems.

For the most part, the sessions were organized to feature different groups of materials ormicrostructural components rather than electron microscope techniques or instrumentation.Attendees heard discussions of low-energy electron microscopy of surfaces, crystallography,defects, specimen preparation, and interfaces in metals and ceramics. Technologicalapplications ranged over magnetic materials, microelectronic materials, partially ordered andnanophase materials, polymers, ceramics, metallic alloys, concrete, biomaterials, and glasses.

The symposium organizers are grateful to the following for assisting in chairing sessions:I.M. Anderson, N.D. Browning, V.P. Dravid, C.P. Flynn, RJ. Gottschall, R. Hull, K.M.Krishnan, M.R. Libera, J. Mayer, J.R. Michael, D.J. Miller, I.M. Robertson, M. Sarikaya, R.Sinclair, D.J. Smith, A. Thust, R.D. Twesten, G.C. Weatherly, and Y. Zhu. Many of thesecolleagues also presented invited talks.

Symposium support was provided by Argonne National Laboratory, Lawrence BerkeleyNational Laboratory, Oak Ridge National Laboratory, the University of Illinois, JEOL USA,Inc. and Fischione Instruments, Inc. The symposium organizers and the Materials ResearchSociety gratefully acknowledge their support. Finally, special thanks go to the helpful MRSstaff.

Jim BentleyCharles AllenUli DahmenIvan Petrov

June 2001






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 557— Amorphous and Heterogeneous Silicon Thin Films: Fundamentals toDevices—1999, H.M. Branz, R.W. Collins, H. Okamoto, S. Guha, R. Schropp,1999, ISBN: 1-55899-464-5

Volume 558— Flat-Panel Displays and Sensors—Principles, Materials and Processes, F.R. Libsch,B. Chalamala, R. Friend, T. Jackson, H. Ohshima, 2000, ISBN: 1-55899-465-3

Volume 559— Liquid Crystal Materials and Devices, T.J. Bunning, S.H. Chen, L.C. Chien,T. Kajiyama, N. Koide, S-C.A. Lien, 1999, ISBN: 1-55899-466-1

Volume 560— Luminescent Materials, J. McKittrick, B. DiBartolo, K. Mishra, 1999,ISBN: 1-55899-467-X

Volume 561— Organic Nonlinear Optical Materials and Devices, B. Kippelen, H.S. Lackritz,R.O. Claus, 1999, ISBN: 1-55899-468-8

Volume 562— Polycrystalline Metal and Magnetic Thin Films, D.E. Laughlin, K.P. Rodbell,O. Thomas, B. Zhang, 1999, ISBN: 1-55899-469-6

Volume 563— Materials Reliability in Microelectronics IX, C.A. Volkert, A.H. Verbruggen,D.D. Brown, 1999, ISBN: 1-55899-470-X

Volume 564— Advanced Interconnects and Contacts, D.C. Edelstein, T. Kikkawa, M.C. Oztttrk,K-N. Tu, E J. Weitzman, 1999, ISBN: 1-55899-471-8

Volume 565— Low-Dielectric Constant Materials V, J. Hummel, K. Endo, W.W. Lee, M. Mills,S-Q. Wang, 1999, ISBN: 1-55899-472-6

Volume 566— Chemical-Mechanical Polishing—Fundamentals and Challenges, S.V. Babu,S. Danyluk, M. Krishnan, M. Tsujimura, 2000, ISBN: 1-55899-473-4

Volume 567— Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, H.R. Huff,C.A. Richter, M.L. Green, G. Lucovsky, T. Hattori, 1999, ISBN: 1-55899-474-2

Volume 568— Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions,H-J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka, 1999,ISBN: 1-55899-475-0

Volume 569— In Situ Process Diagnostics and Modelling, O. Auciello, A.R. Krauss, E.A. Irene,J.A. Schultz, 1999, ISBN: 1-55899-476-9

Volume 570— Epitaxial Growth, A-L. Barabasi, M. Krishnamurthy, F. Liu, T.P. Pearsall, 1999,ISBN: 1-55899-477-7

Volume 571— Semiconductor Quantum Dots, S.C. Moss, D. Ila, H.W.H. Lee, D.J. Norris, 2000,ISBN: 1-55899-478-5

Volume 572— Wide-Bandgap Semiconductors for High-Power, High-Frequency andHigh-Temperature Applications—1999, S.C. Binari, A.A. Burk, M.R. Melloch,C. Nguyen, 1999, ISBN: 1-55899-479-3

Volume 573— Compound Semiconductor Surface Passivation and Novel Device Processing,H. Hasegawa, M. Hong, Z.H. Lu, S.J. Pearton, 1999, ISBN: 1-55899-480-7

Volume 574— Multicomponent Oxide Films for Electronics, M.E. Hawley, D.H.A. Blank, C-B. Eom,D.G. Schlom, S.K. Streiffer, 1999, ISBN: 1-55899-481-5

Volume 575— New Materials for Batteries and Fuel Cells, D.H. Doughty, L.F. Nazar, M. Arakawa,H-P. Brack, K. Naoi, 2000, ISBN: 1-55899-482-3

Volume 576— Organic/Inorganic Hybrid Materials II, L.C. Klein, L.F. Francis, M.R. DeGuire,J.E. Mark, 1999, ISBN: 1-55899-483-1

Volume 577— Advanced Hard and Soft Magnetic Materials, M. Coey, L.H. Lewis, B-M. Ma,T. Schrefl, L. Schultz, J. Fidler, V.G. Harris, R. Hasegawa, A. Inoue, M.E. McHenry,1999, ISBN: 1-55899-485-8

Volume 578— Multiscale Phenomena in Materials—Experiments and Modeling, D.H. Lassila,I.M. Robertson, R. Phillips, B. Devincre, 2000, ISBN: 1-55899-486-6

Volume 579— The Optical Properties of Materials, J.R. Chelikowsky, S.G. Louie, G. Martinez,E.L. Shirley, 2000, ISBN: 1-55899-487-4

Volume 580— Nucleation and Growth Processes in Materials, A. Gonis, P.E.A. Turchi, A.J. Ardell,2000, ISBN: 1-55899-488-2

Volume 581— Nanophase and Nanocomposite Materials III, S. Komarneni, J.C. Parker, H. Hahn,2000, ISBN: 1-55899-489-0

Volume 582— Molecular Electronics, S.T. Pantelides, M.A. Reed, J. Murday, A. Aviram, 2000,ISBN: 1-55899-490-4






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 583— Self-Organized Processes in Semiconductor Alloys, A. Mascarenhas, B. Joyce,T. Suzuki, D. Follstaedt, 2000, ISBN: 1-55899-491-2

Volume 584— Materials Issues and Modeling for Device Manofabrication, L. Merhari, L.T. Wille,K. Qonsalves, M.F. Qyure, S. Matsui, L.J. Whitman, 2000, ISBN: 1-55899-492-0

Volume 585— Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth andProcessing, S. Moss, E.H. Chason, B.H. Cooper, T. Diaz de la Rubia, J.M.E. Harper,R. Murti, 2000, ISBN: 1-55899-493-9

Volume 586— Interfacial Engineering for Optimized Properties II, C.B. Carter, E.L. Hall,C.L. Briant, S. Nutt, 2000, ISBN: 1-55899-494-7

Volume 587— Substrate Engineering—Paving the Way to Epitaxy, D.P. Norton, D.Q. Schlom,N. Newman, D.H. Matthiesen, 2000, ISBN: 1-55899-495-5

Volume 588— Optical Microstructural Characterization of Semiconductors, J. Piqueras,T. Sekiguchi, M.S. Unlu, N.M. Kalkhoran, 2000, ISBN: 1-55899-496-3

Volume 589— Advances in Materials Problem Solving with the Electron Microscope, J. Bentley,U. Dahmen, C. Allen, I. Petrov, 2000, ISBN: 1-55899-497-1

Volume 590— Applications of Synchrotron Radiation Techniques to Materials Science V,S.R. Stock, D.L. Perry, S.M. Mini, 2000, ISBN: 1-55899-498-X

Volume 591— Nondestructive Methods for Materials Characterization, T. Matikas, N. Meyendorf,Q. Baaklini, R. Gilmore, 2000, ISBN: 1-55899-499-8

Volume 592— Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon andRelated Structures, H.J. von Bardeleben, D.A. Buchanan, A.H. Edwards, T. Hattori,2000, ISBN: 1-55899-500-5

Volume 593— Amorphous and Nanostructured Carbon, J. Robertson, J.P. Sullivan, O. Zhou,T.B. Allen, B.F. Coll, 2000, ISBN: 1-55899-501-3

Volume 594— Thin Films—Stresses and Mechanical Properties VIII, R. Vinci, O. Kraft, N. Moody,P. Besser, E. Shaffer II, 2000, ISBN: 1-55899-502-1

Volume 595— GaN and Related Alloys—1999, R. Feenstra, T. Myers, M.S. Shur, H. Amano, 2000,ISBN: 1-55899-503-X

Volume 596— Ferroelectric Thin Films VIII, R.W. Schwartz, S.R. Summerfelt, P.C. Mclntyre,Y. Miyasaka, D. Wouters, 2000, ISBN: 1-55899-504-8

Volume 597— Thin Films for Optical Waveguide Devices and Materials for Optical Limiting,K. Nashimoto, B.W. Wessels, J. Shmulovich, A.K-Y. Jen, K. Lewis, R. Pachter,R. Sutherland, J. Perry, 2000, ISBN: 1-55899-505-6

Volume 598— Electrical, Optical, and Magnetic Properties of Organic Solid-StateMaterials V, S.P. Ermer, J.R. Reynolds, J.W. Perry, A.K-Y. Jen, Z. Bao, 2000,ISBN: 1-55899-506-4

Volume 599— Mineralization in Natural and Synthetic Biomaterials, P. Li, P. Calvert, R.J. Levy,T. Kokubo, C.R. Scheid, 2000, ISBN: 1-55899-507-2

Volume 600— Electroactive Polymers, Q.M. Zhang, T. Furukawa, Y. Bar-Cohen, J. Scheinbeim,2000, ISBN: 1-55899-508-0

Volume 601— Superplasticity—Current Status and Future Potential, P.B. Berbon, M.Z. Berbon,T. Sakuma, T.G. Langdon, 2000, ISBN: 1-55899-509-9

Volume 602— Magnetoresistive Oxides and Related Materials, M. Rzchowski, M. Kawasaki,A.J. Millis, M. Rajeswari, S. von Molnar, 2000, ISBN: 1-55899-510-2

Volume 603— Materials Issues for Tunable RF and Microwave Devices, Q. Jia, F.A. Miranda,D.E. Oates, X. Xi, 2000, ISBN: 1-55899-511-0

Volume 604— Materials for Smart Systems HI, M. Wun-Fogle, K. Uchino, Y. Ito, R. Gotthardt,2000, ISBN: 1-55899-512-9

Volume 605— Materials Science of Microelectromechanical Systems (MEMS) Devices II,M.P. deBoer, A.H. Heuer, S.J. Jacobs, E. Peeters, 2000, ISBN: 1-55899-513-7

Volume 606— Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, A.C. Jones,J. Veteran, S. Kaushal, D. Mullin, R. Cooper, 2000, ISBN: 1-55899-514-5

Volume 607— Infrared Applications of Semiconductors III, B.J.H. Stadler, M.O. Manasreh,I. Ferguson, Y-H. Zhang, 2000, ISBN: 1-55899-515-3

Volume 608— Scientific Basis for Nuclear Waste Management XXIII, R.W. Smith, D.W. Shoesmith,2000, ISBN: 1-55899-516-1

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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