fds 3890
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February 2001
2001 Fairchild Semiconductor Corporation FDS3890 Rev B(W)
FDS389080V N-Channel Dual PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventionalswitching PWM controllers.
These MOSFETs feature faster switching and lowergate charge than other MOSFETs with comparableR
DS(ON)specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),and DC/DC power supply designs with higher overallefficiency.
Features
4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V
RDS(ON) = 50 m @ VGS = 6 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
S2
SO-8G2
S1G1
D2
D2D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 80 V
VGSS Gate-Source Voltage 20 V
ID Drain Current Continuous (Note 1a) 4.7 A
Pulsed 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1.0
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/WRJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W
Package Marking and Ordering InformationDevice Marking Device Reel Size Tape width Quantity
FDS3890 FDS3890 13 12mm 2500 units
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Electrical Characteristics TA
= 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)WDSS Single Pulse Drain-Source
Avalanche EnergyVDD = 40 V, ID = 4.7 A 175 mJ
IAR Maximum Drain-Source AvalancheCurrent
4.7 A
Off CharacteristicsBVDSS DrainSource Breakdown Voltage VGS = 0 V, ID = 250 A 80 V
BVDSSTJ
Breakdown Voltage TemperatureCoefficient
ID = 250 A, Referenced to 25C 86 mV/C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A
IGSSF GateBody Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR GateBody Leakage, Reverse VGS = 20 V VDS = 0 V 100 nA
On Characteristics (Note 2)VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2 2.3 4 V
VGS(th)TJ Gate Threshold VoltageTemperature Coefficient ID = 250 A, Referenced to 25C 6 mV/C
RDS(on) Static DrainSourceOnResistance
VGS = 10 V, ID = 4.7 A
VGS = 6.0 V, ID = 4.4 A
VGS = 10 V, ID = 4.7 A, TJ = 125C
34
37
60
44
50
82
m
ID(on) OnState Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 10 V, ID = 4.7 A 24 S
Dynamic CharacteristicsCiss Input Capacitance 1180 pF
Coss Output Capacitance 171 pF
Crss Reverse Transfer Capacitance
VDS = 40 V, V GS = 0 V,
f = 1.0 MHz
50 pF
Switching Characteristics (Note 2)td(on) TurnOn Delay Time 11 20 ns
tr TurnOn Rise Time 8 16 ns
td(off) TurnOff Delay Time 26 50 ns
tf TurnOff Fall Time
VDD =40 V, ID = 1 A,VGS = 10 V, RGEN = 6
12 25 ns
Qg Total Gate Charge 25 35 nC
Qgs GateSource Charge 4.5 nC
Qgd GateDrain Charge
VDS = 40 V, ID = 4.7 A,VGS = 10 V
5.8 nC
DrainSource Diode Characteristics and Maximum RatingsIS Maximum Continuous DrainSource Diode Forward Current 1.3 A
VSDDrainSource Diode ForwardVoltage
VGS = 0 V, IS = 1.3 A (Note 2) 0.74 1.2 V
Notes:
1. RJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC
is guaranteed by design while RCA
is determined by the user's board design.
a) 78C/W whenmounted on a 1in
2
pad of 2 oz copper
b) 125C/W whenmounted on a .04 in
2
pad of 2 oz copper
c) 135C/W when mounted on aminimum pad.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
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Typical Characteristics
0
4
8
12
16
20
0 1 2 3 4
VDS, DRAIN-SOURCE VOLTAGE (V)
ID,DRAINCURRENT(A)
5.0V
4.0V
VGS = 10V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
RDS(ON),NORMALIZED
DRAIN-SOURCEON-RESISTANC
E
VGS = 4.0V
4.5V5.0V
10V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON),NORMALIZED
DRAIN-SOURCEON-RESISTANC
ID = 4.7A
VGS = 10V
0
0.025
0.05
0.075
0.1
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON),ON-RESISTANCE(OHM)
ID = 2.4 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation withTemperature.
Figure 4. On-Resistance Variation withGate-to-Source Voltage.
0
4
8
12
16
20
1 2 3 4 5
VGS, GATE TO SOURCE VOLTAGE (V)
ID,DRAINCURRENT(A)
TA = 125oC
-55
o
C
VDS = 5V
25oC
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS,REVERSEDRAINCURRENT(A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.
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Typical Characteristics
0
2
4
6
8
10
0 6 12 18 24 30
Qg, GATE CHARGE (nC)
VGS,GATE-SOURCEVOLTAGE(V)
ID = 4.7A VDS = 10V
40V
20V
0
500
1000
1500
2000
0 20 40 60 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE(pF)
CISS
CRSSCOSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID,DRAINCURRENT(A)
DC
10s
1s
100ms
100sRDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RJA = 135oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
0.01 0.1 1 10 100
t1, TIME (sec)
P(pk),PEAKTRANSIENTPOWER(W)
SINGLE PULSE
RJA = 135C/W
TA = 25C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse MaximumPower Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t),NORMALIZEDEFFECTIVE
TRANSIENTTHERMALRESISTANCE
RJA(t) = r(t) + RJA
RJA = 135C/W
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/ t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.Transient thermal response will change depending on the circuit board design.
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:
1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.
2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Formative orIn Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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