lec 18 low power
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Introduction to
CMOS VLSIDesign
Design for Low Power
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CMOS VLSI DesignDesign for Low Power Slide 2
Outline
Power and Energy
Dynamic Power
Static Power
Low Power Design
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CMOS VLSI DesignDesign for Low Power Slide 3
Power and Energy
Power is drawn from a voltage source attached to
the VDDpin(s) of a chip.
Instantaneous Power:
Energy:
Average Power:
( ) ( )DD DD
P t i t V
0 0
( ) ( )
T T
DD DDE P t dt i t V dt
avg
0
1 ( )
T
DD DDEP i t V dtT T
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CMOS VLSI DesignDesign for Low Power Slide 4
Dynamic Power
Dynamic power is required to charge and discharge
load capacitances when transistors switch.
One cycle involves a rising and falling output.
On rising output, charge Q = CVDDis required
On falling output, charge is dumped to GND
This repeats Tfswtimes
over an interval of T
Cfsw
iDD
(t)
VDD
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CMOS VLSI DesignDesign for Low Power Slide 5
Dynamic Power Cont.
Cfsw
iDD
(t)
VDD
dynamicP
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CMOS VLSI DesignDesign for Low Power Slide 6
Dynamic Power Cont.
Cfsw
iDD
(t)
VDD
dynamic
0
0
sw
2sw
1( )
( )
T
DD DD
T
DDDD
DDDD
DD
P i t V dtT
V i t dt T
VTf CV
T
CV f
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CMOS VLSI DesignDesign for Low Power Slide 7
Activity Factor
Suppose the system clock frequency = f
Let fsw= af, where a= activity factor
If the signal is a clock, a= 1
If the signal switches once per cycle, a= Dynamic gates:
Switch either 0 or 2 times per cycle, a=
Static gates:
Depends on design, but typically a= 0.1
Dynamic power:2
dynamic DDP CV fa
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CMOS VLSI DesignDesign for Low Power Slide 8
Short Circuit Current
When transistors switch, both nMOS and pMOS
networks may be momentarily ON at once
Leads to a blip of short circuit current.
< 10% of dynamic power if rise/fall times are
comparable for input and output
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CMOS VLSI DesignDesign for Low Power Slide 9
Example
200 Mtransistor chip
20M logic transistors
Average width: 12 l
180M memory transistors Average width: 4 l
1.2 V 100 nm process
Cg= 2 fF/mm
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CMOS VLSI DesignDesign for Low Power Slide 10
Dynamic Example
Static CMOS logic gates: activity factor = 0.1
Memory arrays: activity factor = 0.05 (many banks!)
Estimate dynamic power consumption per MHz.Neglect wire capacitance and short-circuit current.
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CMOS VLSI DesignDesign for Low Power Slide 11
Dynamic Example
Static CMOS logic gates: activity factor = 0.1
Memory arrays: activity factor = 0.05 (many banks!)
Estimate dynamic power consumption per MHz.Neglect wire capacitance.
6
logic
6mem
2
dynamic logic mem
20 10 12 0.05 / 2 / 24
180 10 4 0.05 / 2 / 72
0.1 0.05 1.2 8.6 mW/MHz
C m fF m nF
C m fF m nF
P C C f
l m l m
l m l m
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CMOS VLSI DesignDesign for Low Power Slide 12
Static Power
Static power is consumed even when chip is
quiescent.
Ratioed circuits burn power in fight between ON
transistors
Leakage draws power from nominally OFF
devices
0 1
gs t ds
T T
V V V
nv v
ds dsI I e e
0t t ds s sb sV V V V
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CMOS VLSI DesignDesign for Low Power Slide 13
Ratio Example
The chip contains a 32 word x 48 bit ROM
Uses pseudo-nMOS decoder and bitline pullups
On average, one wordline and 24 bitlines are high
Find static power drawn by the ROM b= 75 mA/V2
Vtp= -0.4V
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CMOS VLSI DesignDesign for Low Power Slide 14
Ratio Example
The chip contains a 32 word x 48 bit ROM
Uses pseudo-nMOS decoder and bitline pullups
On average, one wordline and 24 bitlines are high
Find static power drawn by the ROM b= 75 mA/V2
Vtp= -0.4V
Solution: 2
pull-up
pull-up pull-up
static pull-up
24A2
29W
(31 24) 1.6 mW
DD tp
DD
V VI
P V I
P P
b
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CMOS VLSI DesignDesign for Low Power Slide 15
Leakage Example
The process has two threshold voltages and two
oxide thicknesses.
Subthreshold leakage:
20 nA/mm for low Vt
0.02 nA/mm for high Vt
Gate leakage:
3 nA/mm for thin oxide
0.002 nA/mm for thick oxide Memories use low-leakage transistors everywhere
Gates use low-leakage transistors on 80% of logic
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CMOS VLSI DesignDesign for Low Power Slide 16
Leakage Example Cont.
Estimate static power:
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CMOS VLSI DesignDesign for Low Power Slide 17
Leakage Example Cont.
Estimate static power:
High leakage:
Low leakage:
6 620 10 0.2 12 0.05 / 2.4 10m ml m l m
6
6 6
20 10 0.8 12 0.05 /
180 10 4 0.05 / 45.6 10
m
m m
l m l
l m l m
6
6
2.4 10 20 / / 2 3 /
45.6 10 0.02 / / 2 0.002 /
32
38
static
static static DD
I m nA m nA m
m nA m nA m
mA
P I V mW
m m m
m m m
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CMOS VLSI DesignDesign for Low Power Slide 18
Leakage Example Cont.
Estimate static power:
High leakage:
Low leakage:
If no low leakage devices, Pstatic= 749 mW (!)
6 620 10 0.2 12 0.05 / 2.4 10m ml m l m
6
6 6
20 10 0.8 12 0.05 /
180 10 4 0.05 / 45.6 10
m
m m
l m l
l m l m
6
6
2.4 10 20 / / 2 3 /
45.6 10 0.02 / / 2 0.002 /
32
38
static
static static DD
I m nA m nA m
m nA m nA m
mA
P I V mW
m m m
m m m
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CMOS VLSI DesignDesign for Low Power Slide 19
Low Power Design
Reduce dynamic power
a:
C:
VDD: f:
Reduce static power
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CMOS VLSI DesignDesign for Low Power Slide 20
Low Power Design
Reduce dynamic power
a: clock gating, sleep mode
C:
VDD:
f:
Reduce static power
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CMOS VLSI DesignDesign for Low Power Slide 21
Low Power Design
Reduce dynamic power
a: clock gating, sleep mode
C: small transistors (esp. on clock), short wires
VDD:
f:
Reduce static power
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CMOS VLSI DesignDesign for Low Power Slide 22
Low Power Design
Reduce dynamic power
a: clock gating, sleep mode
C: small transistors (esp. on clock), short wires
VDD
: lowest suitable voltage
f:
Reduce static power
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CMOS VLSI DesignDesign for Low Power Slide 23
Low Power Design
Reduce dynamic power
a: clock gating, sleep mode
C: small transistors (esp. on clock), short wires
VDD
: lowest suitable voltage
f: lowest suitable frequency
Reduce static power
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CMOS VLSI DesignDesign for Low Power Slide 24
Low Power Design
Reduce dynamic power
a: clock gating, sleep mode
C: small transistors (esp. on clock), short wires
VDD
: lowest suitable voltage
f: lowest suitable frequency
Reduce static power
Selectively use ratioed circuits
Selectively use low Vtdevices Leakage reduction:
stacked devices, body bias, low temperature
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