versatile 200 mm rtp/rtcvd system temperature range: room ... · purge gas line with needle valve...
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Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Versatile 200 mm RTP/RTCVD system Temperature range: Room temperature up to 1500°C
Pressure range: Atmosphere down to 10-6 Torr
AS-Master
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Applications: RTP & RTCVD
• Implant annealing • Contact annealing (III-V and SiC) • Silicon carbonization • Rapid Thermal Oxidation (RTO) • Rapid Thermal Nitridation (RTN) • Diffusion from spin-on dopants • Densification and crystallization • Selenization • Rapid Thermal CVD (Si poly, SiO2, SiNx) • Etc.
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Substrate types
• Silicon wafers • Compound semiconductor wafers • GaN/Sapphire wafers for LEDs • Silicon carbide wafers • Poly silicon wafers for solar cells • Glass substrates • Metals • Etc…
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Key Features
• Multi-zone infrared halogen lamp furnace with close loop air cooling • Stainless steel cold wall chamber technology • Fast digital PID temperature controller • Thermocouple and pyrometer control • Atmospheric and vacuum process capability • Purge gas line with needle valve • Up to 6 process gas lines with digital MFC • PC control with Ethernet communication for fast data logging • Optional turbo pump and pressure control • Manual or cassette to cassette loading
Stand alone system for substrates up to 200 mm
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Multi configuration system to meet customer requirements
• Several furnace configurations: • S20: standard, 6 zones, up to 1150°C • S20 HT: high temperature, 6 zones, up to 1500°C • 2000: enhanced uniformity, 10 zones, up to 1250°C • 2000 HT: can run in S20 HT or 2000 configuration
• Multi temperature port locations to meet different substrate sizes • Optional pumping chamber for low vacuum processes • Gas panel for annealing to CVD applications • Optional pressure control • Optional turbo pumping • Cassette to cassette version
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Infrared furnace configurations
Model Number of heating zones
Max. Temperature
Max. ramp rate (200 mm wafer)
up to 1100°C
Power
S20 6 1150°C 100°C/s 75 kW 2000 10 1250°C 150°C/s 86 kW S20 HT 6 1500°C(1) 200°C/s 102 kW 2000 HT(2) 10 (2000 mode)
6 (HT mode) 1250°C 1500°C
150°C/s 200°C/s
102 kW
(1) The maximum temperature depends on substrate and process conditions. (2) The AS-Master 2000HT can switch from 2000 to S20HT mode. The switch from one configuration to the other is software controlled.
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Reactor design
Water-cooled bedplate
Wafer
Pyrometer
Vacuum
Quartz pins
Halogen lamps
Quartz window GAS INLET
Thermocouple Thermocouple
Pyrometer position at edge viewport
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Easy and fast installation of quartz pins for different substrate sizes
Wafer
Standard quartz pins installation: Easy substrate size change for 4’, 6’, 200 and 240 mm
Outer quarts pins
Holding quarts pins
Quartz pins for intermediate substrate sizes: 5’ or others
Bedplate
Quartz pins for small substrate and substrate with different shapes:
Drawing pins shape quartz pins Can be installed at any location
Substrate
Bedplate
Thermocouple
6’ 4’
Bedplate
Wafer
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Furnace control
Infrared halogen tubular lamp furnace with fan cooling: Low noise level No compressed air consumption
Power blocks are power control (not voltage control) Power to lamps is independent of
Lamp filament resistivity Lamp aging
=> Better process reproducibility
Multi zone control: Excellent temperature uniformity
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Multi-zone furnace
Zone 1
Zone 4
Zone 2
Zone 3
Zone 5
Zone
6
Zone
9
Zone
7
Zone
8
Zone
10
Lamp distribution 2000 and 2000 HT versions
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Zone 1
Zone 4
Zone 2 Zone 3
Zone
5
Zone
6
Lamp distribution S20 and S20 HT versions
Multi-zone furnace
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Process chamber
Lamp air cooling system
Lamp furnace Lamp furnace
FAN
Rear view
Heat exchanger
Water
Heat exchanger
Hot air
Cold air
Process chamber
Side view
Close loop circuit for lamp cooling – No heat released to the cleanroom
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Temperature control
Thermocouple temperature control: • K type thermocouple: Room temperature to 1000°C • 5 thermocouple feedthroughs
Pyrometer temperature control: • High temperature range pyrometer: 400°C to 1500°C • Low temperature range pyrometer: 150°C to 1100°C • 4 possible pyrometer locations for different substrate sizes • Optional second pyrometer
Fast digital temperature controller: • Overshoot-less capability • Several sets of PID parameters for different temperature levels • Autotuning procedure • Possibility to associate a PID parameter table to each recipe
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Additional pumping chamber
Turbo pump
Auxiliary pumping chamber
Gate valve
High vacuum conductance between process chamber and turbo pump
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Option fast cooling system
Water-cooled bedplate
Process heating position: wafer held by quartz pins
Wafer
Bellows
Pyrometer Piston
Quartz pin
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Fast cooling position: wafer in contact with water-cooled bedplate
Wafer
Quartz pin
Very fast cooling rate up to 100 ºC/s down to room temperature
Option fast cooling system
Water-cooled bedplate
Bellows
Pyrometer Piston
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Temperature control quartz window
Pump Heat exchanger
Water in Water out
RTCVD: temperature controlled window to limit deposition on window
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Substrate rotation RTCVD : substrate rotation for enhanced deposition uniformity
Wafer
Vacuum feedthrough Motor
Rotating bedplate
Bearings Atmosphere
Vacuum
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Standard Vacuum and Gas configuration
MFC
Purge Gas 1 Gas 2 Gas 3
Vacuum gauge
Vacuum valve
To Vacuum pump
Exhaust Check valve
Opt
iona
l MFC
MFC
Gas 4 Gas 5 M
FC
MFC
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Gas panel
The gas panel is housed in an independent cabinet on the system backside
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Configuration with turbo pump and CVD gas panel
Capacitance Manometer
10 Torr
Vacuum valve
Exhaust
Pressure switch
Purge Gas 1
MFC
MFC
Gas 2
MFC
Gas 3
MFC
NO Valve
NC Valve Gas 5
Primary vacuum pump
Throttle valve
Pressure controller
MFC
MFC
Gas 6 Gas 4
Process chamber
Forepump Turbo Pump
Gate valve
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Easy substrate loading with full wafer access
Manual loading version
Pneumatic jack
Pneumatic jack
CHAMBER CLOSED
CHAMBER OPEN
wafer
Thermocouples
From development to production : manual loading to cassette to cassette loading
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Chamber loading
ROBOT
CHAMBER CLOSED
CHAMBER OPEN
ROBOT
Cassette to cassette loading version
From development to production : manual loading to cassette to cassette loading
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Cluster tool version
Cluster
ROBOT Pyrometer
Cluster
ROBOT
Pyrometer
Loading mode
Process mode
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Cassette
Cooling station
Furnace
Robot
AS-Master
Top view: Single cassette configuration for wafer annealing
Custom configuration depending on customer application
Cassette to cassette version
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Multi cassette configuration for multi wafer annealing with susceptors Compound semiconductors and sapphire applications, LED production
Loading station
Cassette to cassette version Custom configuration depending on customer application
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Access modes: • Operator, Engineer, Administrator
Recipe mode: • Up to 100 steps per recipe • TC and pyrometer calibration associated to recipe • PID table associated to recipe
Process: • Full data logging • All data and table saved in process historical • Automatic autotuning (PID calculation) • Automatic pyrometer calibration
Manual mode: • Manual control of heating, vacuum and gas
Configuration mode: • Mass flow ranges, calibration tables, alarm values…
Same software for all Annealsys systems = robustness and reliability
PC Control Software
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master PC Control Software: Real time display and data collection
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master PC Control Software: Real time display and data collection
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master PC Control Software: Diagnostic capabilities
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Easy access for service
Control module Reactor module
Pneumatic lift of upper flange for quartz window access
Lamp furnace opening for halogen lamp access
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
1400
1104
Control Module
Process chamber and air cooling system
700
800
Maintenance access area
Maintenance access area
600
Computer Optional Transformer
Optional Vacuum Pump
Gas
cab
inet
Manual loading version layout
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Cassette to cassette version layout
1400
1104
Control Module
Process chamber and air cooling system
700
800
Maintenance access area
Maintenance access area
600
Computer Optional
Transformer
Optional Vacuum Pump
Gas
cab
inet
Robot Handling
unit
620
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Temperature uniformity on 200-mm wafer measured with a wafer probe Temperature uniformity: 0.14% @1023°C (AS-Master 2000)
Thermocouple R Θ T (°C) TC1 5 0° 1025 TC2 50 0° 1021 TC3 50 315° 1024
TC4 50 270° 1023 TC5 90 0° 1023 TC6 50 315° 1030 TC7 90 270° 1023
TC2 TC5 TC1
TC4
TC7
TC6
TC 3 45°
Θ
Wafer probe configuration
Process results
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Temperature uniformity on 6-inch wafer measured by RTO: ±3°C @1000°C AS-Master 2000
y = 0.5881x + 901.01R2 = 0.9997
975
980
985
990
995
1000
1005
1010
1015
1020
1025
0 50 100 150 200 250
Oxide thickness
Tem
pera
ture
Oxydation kinetic
Process Wafersize
Temp. Oxide thickness (nm) Calculated temperatures (°C) Uniformity(Tmax-Tmin)/2
Uniformity3 Sigma
°C Min Max Center 3 Sigma Min Max Center 3 Sigma +/- °C +/- °COX-0980 6" 980 126.69 169.00 134 10.53 976 1000 980 6.19 12.44 3.10OX-1000 6" 1000 163.00 182.86 169 9.62 997 1009 1000 5.66 5.84 2.83OX-1020 6" 1020 184.70 223.10 202 12.80 1010 1032 1020 7.53 11.29 3.76
Process results
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Specifications AS-Master
Maximum substrate diameter 200 mm Chamber dimensions 300 mm diameter x 30 mm Number of lamps 20 to 32 (depending on version) Lamp cooling Fan with heat exchanger and closed loop air circuit Temperature range RT to 1500°C Ramp rate 0.1°C to 200°C/s (depends on furnace version) Temperature control Fast digital PID controller Thermocouple 2 K type Low / high temperature pyrometer range 150°C to 1100°C / 400°C to 1500°C Pyrometer ports 4 Gas injection Under quartz window Purge gas line Standard Process gas line with mass flow cont. Up to 6 Pumping port Backside of chamber Vacuum valve and vacuum gauge Standard
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Facility requirements AS-Master
Voltage 3x400V+N Optional transformer for other voltage
Power 75 kW (Standard version) 86 kW (10 zones version)
102 kW (High temperature version)
Water flow 30 l/mn (Standard version) 40 l/mn(10 zones version)
50 l/mn (High temperature version)
Compressed air 6 bars / 0.1 m3/h
Process gases 2 bars
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Dimensions and Weight
AS-Master Manual loading AS-Master + Robot module Width 1,100 mm 1,100 mm Height 2,500 mm 2,500 mm Depth 1,550 mm 2,170 mm
Weight 800 kg 1,050 kg
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
Customers
China: Chinese Academy of Science France: CNRS LAAS Germany: Robert Bosch Japan: AIST Osaka Prefecture University Showa Denko Luxembourg: CRP Gabriel Lippmann (RTCVD) Norway: SINTEF Russia: Technoinfo Spain: CSIC IMB Barcelona (RTCVD) Taiwan: Promos Thailand: TMEC
Non-contractual document, specifications subject to change without notice
ANNEALSYS AS-Master
ANNEALSYS
Bâtiment T2, PIT de la Pompignane Rue de la Vieille Poste
34055 MONTPELLIER Cedex 1 France
Tel: +33 (0) 467 20 23 63
Email: info@annealsys.com
www.annealsys.com
Thank you for your attention
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