an idiosyncratic survey of...
TRANSCRIPT
An idiosyncratic surveyof
Spintronics
From 1963to the
Present
Peter M LevyNew York University
Three Nobel laureates I’ve worked with
Louis Néel - 1970
Albert Fert - 2007
John H. van Vleck - 1977
The early years
1963-85
The early period: 1960-85
• Grenoble 1963 Néel et al.Interlayer coupling
Proceedings of ICM’64
The early period: 1960-85
• Paris 1968-76 Fert & CampbellTwo current model of conduction in ferromagnetic metals
• 1971-82 Spin dependent tunneling
The early period: 1960-85
• Heterostructures 1970’s Esaki
The early period: 1960-85
• Metallic multilayers- 1980’s Schuller, Shinjo, Prinz,Grünberg
• Spin accumulation and injection -1987 Silsbee and Johnsonvon Son and Wyder
The early period: 1960-85
Metallic multilayers&
GMR
1985-95
• Interlayer coupling 1986, Grünberg, Salamon,Flynn, Kwo, Majkrzak, Yafet.
• Giant magnetoresistance [GMR] 1988, Fert, Grünberg
1985 - 1995
Spintronics- control of current through spin of electron
The two current model of conduction in ferromagnetic metals
Parallel configuration Antiparallel configuration
1988 Giant magnetoresistanceAlbert Fert & Peter Grünberg
Two current model in magnetic multilayers
Data on GMR
M.N. Baibich et al., Phys. Rev. Lett. 61, 2472 (1988).
• Spin currents in tunnel juctions 1989, Slonczewski
• CPP-MR 1991 Levy, Bass
Current in the plane (CIP)-MR
vs
Current perpendicular to the plane (CPP)-MR
• CPP-MR 1993 Valet-Fert
• Spin valves 1992, Speriosu, Dieny, Parkin
400 H (Oe)-40
400
110
H (kOe)-40
H // [ 011]
spin-valve
multi-layer GMR-metallic spacerbetweenmagnetic layers-current flows in-plane of layers
Co95Fe5/Cu[110]
ΔR/R~110% at RTField ~10,000 Oe
Py/Co/Cu/Co/Py
ΔR/R~8-17% at RTField ~1 Oe NiFe + Co nanolayer
NiFeCo nanolayerCuCo nanolayerNiFeFeMn
H(Oe)
H(kOe)[011]
S.S.P. Parkin
GMR in Multilayers and Spin-Valves
1995 GMR heads
From IBM website
• Larger GMR 1994-5, Parkin, Schad,Bruynseraerde
Oscillations in GMR:Polycrystalline vs.
Single Crystal Co/CuMultilayers
S.S.P. Parkin et al,Phys. Rev. Lett. 66, 2152(1991)
Polycrystalline
Single crystalline
S.S.P. Parkin
Sputter deposited on MgO(100), MgO(110)and Al2O3 (0001) substrates using Fe/Pt seedlayers deposited at 500C and Co/Cu at ~40C
From IBM website; http://www.research.ibm.com/research/gmr.html
Magnetic tunneljunctions
&MRAM
1995-2000
Tunneling-MR
Two magnetic metallic electrodes separated by an insulator; transport controlled by tunneling phenomena not by characteristics of conductionin metallic electrodes
2000 magnetic tunnel junctions used in magnetic random access memory
From IBM website;
http://www.research.ibm.com/research/gmr.html
• Reproducible MR with MTJ’s 1995, Moodera, Meservey,and Miyazake
1995-2000
• Magnetic Random Access Memory 1997 DARPA Initiative {IBM, Motorola, Honywell, NYU}
• Bias dependence of tunneling MR 1997 Zhang, Levy, Parkin. Inelastic scattering.
1995-20001995-2000
• Crystalline barriers, Oxides and semiconductors, 1997- Butler, MacLaren, and Mathon
1995-2000
• Predictions of very large TMR for MgO, 2001 Butler et al., Mathon and Umerski
1995-2000
2001
The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier
•Experimental confirmation of predictions of high TMR for MTJ’s with MgO barriers 2004, Yuasa
Ohno et al.
• CMOS technology, merging spintronics with semiconductors
• Spin injection into semiconductors- 2000 Schmidt et al., Fert & Jaffrès; the Spin transistor-1990 Datta & Das
1995-2000
Resistance mismatch
Spin transfer
2000-2005
2000-2005
• Spin currents produce torques-1996, Berger, Slonczewski
• How charge current produce spin currents which lead to torques acting on background magnetization; back in 1989 JC Slonczewski had the following idea for MTJ’s.
�
I p =2e
hT!"#µ# $T#"!µ![ ]
µ# % µ L µ! % µ R
ˆ T !"# & ˆ ' # ˆ t #!( )*
ˆ ' ! ˆ t !#( )
Particle current:
�
ˆ t !" =t
d+ t
mS
z
" /!t
mS#" /!
tmS
+
" /!t
d# t
mS
z
" /!
$
% &
'
( )
ˆ t !" = tdˆ 1 + t
m
! * +! S " /!
Density matrix:
�
ˆ ! =!" 0
0 !#
$
%
&
'
(
)
Rotated:
�
!"0
+ "zcos# $i"
zsin#
i"zsin# "
0$ "
zcos#
%
& '
(
) *
Transmission amplitude:
Charge current
�
Ic
=2e
2V
hTr
!
ˆ T
Spin current
�
Tr!! ! ˆ T "#$ %Tr!
! ! ˆ T $#"
! T " &Tr! [
! ! ˆ T $#" ]
! T $ &Tr! [
! ! ˆ T "#$ ]
! I s
=2e
2
h
! T "µ" '
! T $µ$[ ]
=2e
2
h
12
µ" + µ$( )! T " '
! T $[ ] + eV ( 1
2
! T " +
! T $[ ]{ }
Equilibrium spin current
�
! T ! "! T #[ ] $
! % ! &
! % #
None other than interlayer exchange coupling
Out of equilibrium spin current
�
! T ! +
! T "[ ]#$"
0 ! $ ! + $!0 ! $ "
�
(! ! "! a )(! ! "
!
b ) =! a "
!
b + i! ! " (! a #
!
b )
�
ˆ T !"# = td
2
ˆ $ # ˆ $ !
For tm=0
�
ˆ t !" = tdˆ 1 + t
m
! # $! S " /!
Spin current
�
�
! I
s
!
�
! I
s
!
�
! I
s
�
! I
s=
e
heV !
! T " +
! T #[ ]
Torque on an electrode
�
! y" #eV td
2
sin$%0
"%z
&
�
! y"
= ! y#(#$")
�
! ! " # $"(
! I
s$! I
s
")
! !
% # $"(! I
s
% $! I
s)
�
! ! "#
= $" (! I
s$! I
s
#)% ˆ # [ ]% ˆ # = $"
! I
s% ˆ # ( )% ˆ #
! ! "
&= $" (
! I
s
& $! I
s)% ˆ & [ ]% ˆ & = "
! I
s% ˆ & ( )% ˆ &
There’s something funny about the equilibrium spin current:
�
! I s
=2e
2
h1
2µ! + µ"( ) f (#)$ d#{ }
! T ! %
! T "[ ]
! T ! %
! T "[ ]&#F td
2 ! ' ! (! ' "
�
! I s!
2e2
h"Ftd
2 ! # $ %
! # &
Resolution:
�
H = !2
2m
" ! 2
+" #S$%(r & r$ )+" #S'%(r & r' )
2nd order perturbation of the free electron energy due to local moments, i.e., RKKY
�
!E = "J(r#$ )! S # %! S $ + i& %
! S # '! S ${ }
2nd order correctionto the energy
Produces precession of conductionelectrons spin
�
d! !
dt= i"
! H "! ! ,! ! [ ]
! H # $iJ(r%& )
! S % '! S &
d! !
dt( J(r%& )
! ! '
! S % '! S &( )
�
! I s!"
Ft
d
2 ! # $ %
! # & ! J(r$& )
! S $ %! S &( )
2000-2005
• Experimental confirmation of current driven magnetization reversal (switching)-CIMS-2000,
PHYSICAL REVIEW LETTERS VOLUME 84, 3149 (2000)Current-Driven Magnetization Reversal and Spin-Wave Excitations in CoCuCo PillarsJ. A. Katine, F. J. Albert, and R. A. BuhrmanSchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853E. B. Myers and D. C. RalphLaboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853
How can one rotate a magnetic layer with a spin polarized current?
By spin torques:Slonczewski-1996Berger -1996Waintal et al-2000Brataas et al-2000
Current induced switching of magnetic layers by spin polarized currents can be divided in two parts:
Creation of torque on background by the electric current, and
reaction of background to torque.
Latter epitomized by Landau-Lifschitz equation; micromagnetics
Former is focus of articles by PML between 2002-2005
Extension of Valet-Fert to noncollinear multilayers
Central idea
fout Tequil
fequilTout
Transmission of out-of-equilibrium distributions across interface
Conventional
Noncollinear multilayers one should also consider
The following does not enter in linear response:
fout
fout
fout foutTout
2000-2005
• Current driven motion of domain walls- 1986-89 Berger exp’t. confirmation 2003-, Fert, Ono, Ohno, Rüdiger.
• Additional theory 2004-2006,
• Gilbert vs LL form of damping, 2007 Wayne Saslow
• Additional theory 2004-2006,
2000-2005
• Spin transfer oscillators STO’s, orspin transfer driven FMR 2006 - Sankey, Buhrman & Ralph; Boulle, Barnas, Fert
2000-2005
• Relativistic treatment of torque, the transfer of orbital angular momentum 2006- Weinberger, Györffy
The present2006-
2006 -
• Spin Hall effect 1999- , Hirsch, SZ. Zhang, Jairo Sinova
• Semiconductors as barriers; ferromagnetic semi-conductors as electrodes in MTJ’s 1968~2000-Kasuya,Wachter, von Molnar, Methfessel, Mattis;2000- Ohno, Munekata, Dietl, Chiba, Das Sarma,Samarth,Awschalom, MacDonald, Sinova, Wunderlich, Halperin, Brataas, Inoue, Bauer.
• MTJ’s with spin filtering barriers, ~2004 - Moodera,Thales group (Barthélemy, Bibes, Gajek,…), Grünberg,
•
2006 -
• Multiferroics magnetoelectrics, 2005- Tsymbal, Thales.
• Carbon nanotubes ~2000- see review by Roche et al.RMP79,677 (2007). As applied to spintronics, see
• Graphene, massless Dirac Fermions ~2005- Kim,..see review by Geim et al. in RMP 2007, to appear(con-mat/0709.1163).
2006 -
• Molecular spintronics ~2000- Ratner, Reed, McEuen, Sanvito,
arXiv:cond-mat/070345v1; Provisionally accepted for publication in Journal of Physics D: Applied Physics
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