basics of dft applications to solids and surfaces

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  • 7/29/2019 Basics of DFT applications to solids and surfaces

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    Peter Kratzer

    Physics Department, University Duisburg-Essen, Duisburg, Germany

    E-mail: [email protected]

    Periodicity in real space and reciprocal space

    Example: honeycomb lattice

    Lattice vectors a1, a2, a3Unit cell volume

    Crystallographic basis consisting of two atoms

    Reciprocal-lattice vectors b1, b2, b3 , each

    perpendicular to a pair of lattice vectors

    real space

    Reciprocal (wave-vector)

    space

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    From molecules to solids

    Electronic bands as limit of bonding and anti-bonding combinations of

    atomic orbitals

    R. Hoffmann,

    Solids and Surfaces - A chemists view of bonding in extended structures, VCH Publishers, 1998

    Blochs theorem

    In an infinite periodic solid, the solutions of the Kohn-Sham equations must

    behave like

    under translations by a lattice vector

    Consequently, we can write

    with a lattice-periodic part uj,k(r).

    The index kis a vector in reciprocal space taken

    from the first Brillouin zone.

    The number of different k-indices equals the

    number of unit cells in a crystal.

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    Brillouin zones

    in two dimensions

    for a square lattice

    for a hexagonal lattice

    in three dimensions

    for a face-centered cubic (fcc)lattice

    Band structure - schematic

    The orbital energies are smoothfunctions ofk

    Example: chain of Pt-R4 complexes

    Adopted from: R. Hoffmann, Solids and Surfaces - A chemists view of bonding in extended

    structures, VCH Publishers, 1998

    k=0 k=/a

    0 k /a

    z2xy

    xz,yz

    x

    2

    -y

    2

    z

    energy

    z

    xy

    xz

    z2

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    Brillouin zone sampling

    Charge densities (and other quantities) are

    represented by Brillouin-zone integrals

    Integrand smooth (for non-metals):

    replace integral by sum over sampling points

    H.J. Monkhorst and J.D. Pack, Phys. Rev.B 13, 5188 (1976); Phys. Rev. B 16, 1748 (1977)

    16 8 MP grid

    In a metal, some (at least one) energy bands

    are only partially occupied by electrons.The Fermi energy Fdefines the highest

    occupied state(s). Plotting the relation

    in reciprocal space yields the Fermi surface(s).

    The grid used ink-space must be suffficiently fine to accurately sample the Fermi surface.

    Fermi surfaces

    http://www.phys.ufl.edu/fermisurface/

    Fermi

    surface

    of Cu

    Fermi

    surface ofFe (spin )

    Fermi

    surface ofFe (spin )

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    Band structure of a magnetic material

    A. Yamasaki & T. Fujiwara, J. Phys.

    Soc. Japan 72, 607 (2003)

    Spin-resolved band

    structure for fcc iron

    GW method (full)

    LSDA (dashed)

    Correct description of

    magnet properties

    requires dense k-spacesampling !

    F

    How to treat metals in DFT

    Fermi distribution functionfFenters Brillouin zone integral:

    Simplest method: smearing of the Fermi function

    artificially increased kBTel~ 0.2 eV

    Extrapolation of the total energy to Tel= 0

    Alternatives:

    Methfessel-Paxton distribution [ Phys. Rev. B 40, 3616 (1989) ]

    Marzari-Vanderbilt ensemble-DFT method [ Phys. Rev. Lett. 79, 1337 (1997) ]

    Tetrahedron method

    Fermi surface is approximated by a polyhedron consisting of small tetrahedra in

    each plaquette [P. E. Blchl et al., Phys. Rev. B 49, 16223 (1994)]

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    Total-energy correction for finite Tel

    -60

    -40

    -20

    0

    20

    40

    60

    80

    0.01

    0.03

    0.05

    0.07

    0.09

    electronic temperature [eV]

    E[meV]

    extrapolated to 0

    E(T)

    substitutional adsorption of Na on Al(111)

    J. Neugebauer and M. Scheffler,

    Phys. Rev. B 46, 16067 (1992)

    Indium adatom on GaAs(001)

    c(4x4) surface

    E. Penev, unpublished

    Ezero = (F(T)+E(T)) + O(T3) = F(T) Tel Sel(T) + O(T3)

    E

    Ezero

    F

    Density of states (DOS)

    Information about the single-particle contribution to the total energy

    Projected density of states (PDOS)

    is the atomic orbital with angular momentum lat atomI

    Recovery of the chemical interpretation in terms of orbitals

    Qualitative analysis tool; ambiguities must be resolved by truncating

    the r-integral orby Lwdin orthogonalization of the

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    energy

    Ferromagnetic half-metal: Co2MnSi

    DOS (states / eV)

    SiMn

    Cominority spin band structure

    Surfaces: geometric andelectronic structure

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    atomic structure: relaxation and reconstruction

    change of interlayerdistances near the surface

    response of the surface

    atoms to an adsorbate

    change of the symmetry

    atomic rearrangement, formation of new bonds

    relaxation reconstruction

    oxygen on Ru(0001)

    supercell

    adatom(+superficial periodic images)

    Supercell approach to surfaces

    Approach accounts for the lateral periodicity

    Sufficiently broad vacuum region to decouple theslabs

    Sufficient slab thickness to mimic semi-infinite

    crystal

    Semiconductors: saturate dangling bonds on theback surface

    Inequivalent surfaces: use dipole correction

    With some codes, slabs with inversion symmetry(for metals) are computationally more efficient

    Alternative: cluster model

    Points to consider:

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    LM

    Surface Brillouin zone

    L

    U

    XZW

    K

    Y'

    Y

    K 6

    RQ

    kz

    kx

    ky

    example: fcc crystal, (111) surface

    M

    K

    Surface band structure of Cu(111)

    (111)

    Shockley surface state

    Tamm surface state

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    Surface states (I)

    gap

    2 |VG|

    /a k

    i

    (k) matching condition

    potential

    exp[ i(k+ i) z]

    ~exp[z]

    Shockley surface state

    complex band structure

    approximation of the nearly-free-electron metal

    Surface states (II)

    In the tight-binding

    (localized orbital) picture,

    surface states mayappear due to dangling

    orbitals split off from the

    band edge Tamm surface state

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    CoCo

    MnSi

    CoCo

    MnMn

    Out-of-plane

    dorb.In-plane dorb.Minority

    bands

    Spin-down components of d

    orbital ofsurface Mn andsubsurface Co

    Surface states derived

    mainly from Co d3r2z2 in

    subsurface layer

    Orbital mixing of Co orbitals withMn dxz dyz orbitals pushes Co

    states out of the gap.

    Co2MnSi: spin-polarized surface state

    P. Kratzeret al., J. Appl.

    Phys. 101, 081725 (2007)PDOS (states/eV)

    Dimerization at (001)-surface of group IV-elements

    top view

    side view

    [001]

    bulk-terminated atomic structure

    reconstructionside view

    [1 1 0]

    [1 1 0]

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    Stabilization of dimerized Si(100) surface

    sp3 sp3 sp3 sp3

    pz

    s-like

    -bond re-hybridisation and charge transfer

    sp2-backbondsp-backbondsJahn-Teller-like effect enhances the

    splitting of the surface state.

    [see, e.g., J. Dabrowski and M. Scheffler,

    Appl. Surf. Sci. 56-58, 15 (1992)]

    Different reconstructions of group-IV (001)-surfaces

    -bonding

    Jahn-Teller effect

    (buckling)

    Jahn-Teller effekt

    (buckling)

    C

    Si

    Ge

    P. Krger & J. Pollmann, Phys. Rev. Lett. 74, 1155 (1995)

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    Surface reconstruction of Si(001)

    top view of Si(001)

    A. Ramstad, G. Brocks, and P. J. Kelly,

    Phys. Rev. B 51, 14504 (1995).

    Thermodynamics ofsurfaces

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    n

    _a

    [001]

    a(O)

    O

    surface free energy

    definition:

    (n) = free energy per unit arearequired to create a surface

    Depends on orientation of the planein a crystal, and on temperature andpressure

    (n)

    Simple metal: potassium

    M. Timmer, unpublished

    DFT calculations at T=0 K: A = Eslab - Natom Ebulk

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    Quantum size effects: Al(110)

    A. Kiejna, J. Peisert and P. Scharoch, Surf. Sci. 432 (1999) 54

    LDA, 20Ry plane wave cut-off,

    16 k-points in IBZ

    EF

    binary material: GaAs

    Gibbs free enthalpy G(p, T, NGa, NAs)

    Surface (free) energy

    equilibrium with bulk GaAs fixes one

    chemical potential: Ga + As = GaAs

    remaining variable ( for instance, As )

    determined by gas pressure

    coexistence with elemental bulk phases setsbounds for As(p,T)

    =[G(p,T,NGa, NAs) NGa Ga NAs As]/A

    As crystal face

    (001)

    Ga crystal face

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    Surface relaxation: GaAs(001) 2 (2x4)

    LDA, 10 Ry plane-wave cut-off,

    2 x 4 k-points in full BZ

    Slabs with n layersEbulk(n) := [Eslab(n) Eslab(n 2)]/Natsurface energy(n)A := Eslab(n) (NAs+NGa) Ebulk(n) (NAs-NGa)As(p,T)

    As2 pressure determines the stable structure

    Under the conditions

    commonly used in

    molecular beamepitaxy, the 2

    surface recon-

    struction is stable.

    Only at lower

    temperatures and

    higher As2 pressures,the c(4 4) structure

    prevails (terminating

    As double layer).

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    Summary & Acknowledgements

    Bjrn Hlsen,FHI

    Sung Sakong,

    UDE

    Matthias Timmer,

    UDE

    S. Javad Hashemifar,

    Isfahan University of

    Technology

    The chemical physics of solid surfaces and interfaces is an active

    and exciting field of current research !