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    Cha ter 2

    DIODE

    Part 1

    Resistance Levels

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 1

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    I-V Characteristics : Silicon vs. Germanium

    Peak Inverse Voltage (PIV) isthe maximum reverse-biasPotential that can be a liedbefore entering the Zenerregion.

    Si: PIV ~ 1000VGe: PIV ~ 400V

    Si: temperature up to 200 C.Ge: temperature below 100 C.

    : T~ .Ge: VT~ 0.3V

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 1

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    Resistance Levels

    i) DC or Static Resistance The application of DC voltage to acircuit containing a semiconductordiode will result in an o eratin ointon the characteristic curve that will notchange with time.

    The dc resistance levels at the kneeand below will be greater than theresistance levels obtained for the

    vertical rise section of thecharacteristics.

    Resistance, RDat the operating pointThe lower the current through adiode the higher the dc resistance

    level.

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 2

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    Example : DC or Static Resistance

    : e erm ne e c res s ance eve s orthediode at

    D=(b) ID= 20mA

    (c) VD= -10V

    Solution

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 3

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    ii) AC or Dynamic Resistance

    If a sinusoidal voltage(signal) is applied,the varyinginput will move the instantaneous operating point upand down a region of the characteristics and

    us e nes a spec c c ange n currenand voltage.

    With no applied varying signal, the point of operation-

    applied dc levels.Quiescent: still or unvarying

    AC Resistance, rd

    e ower t e -po nt o operat on(smaller current or lower voltage) thehigher the AC resistance.

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 4

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    Example : AC or Dynamic Resistance

    Solution

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 5

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    iii) Average AC Resistance

    produce a broad swing, the resistanceassociated with the device for this regionis called the average ac resistance.

    The average ac resistance is the resistance

    determined by a straight line drawn between

    maximum and minimum values of inputvoltage.

    minimum

    The lower the level of currents used todetermine the average resistance the higherthe resistance level.

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 6

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    Summary of Resistance Levels

    Chapter 2 DIODE, Part 1 Resistance LevelSEE 2063 7

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    Cha ter 2

    DIODE

    Part 2

    Diode Equivalent Circuits

    Chapter 2 DIODE, Part 2 Diode Equivalent Circuits 1

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    An equivalent circuit is a combination of elements properly chosen to best represent theActual terminal characteristics of a device, system, or such in a particular operating region.

    i) Piecewise-Linear Equivalent CircuitOne technique for obtaining an equivalent circuit for a diode is to approximate the characteristicsof the device by the straight-line segments. For a sloping section,the average ac resistance isthe resistance level appearing in the equivalent circuit of the actual device.

    only one direction of conduction through a device, anda reverse-bias condition will result in the open-circuit

    state for the device.Since a diode does not reach the conduction stateuntil VDreaches 0.7V with the forward bias, a batteryVTopposing the conduction direction must appear in

    .

    Chapter 2 DIODE, Part 2 Diode Equivalent Circuits 2

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    ii Sim lified E uivalent Circuit

    For most applications, the resistance rav is sufficiently small to be ignored incomparison to the other elements of the network.

    It states that a forward-bias silicon diode in an electronic system under dc

    conditions has a drop of 0.7V across it in the conduction state at any level ofo e.

    Chapter 2 DIODE, Part 2 Diode Equivalent Circuits 3

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    iii Ideal E uivalent Circuit

    Let us take it a step further and establish that a 0.7V level can often be ignored incomparison to the applied voltage level.

    Chapter 2 DIODE, Part 2 Diode Equivalent Circuits 4

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    Summary of Diode Equivalent Circuits

    Chapter 2 DIODE, Part 2 Diode Equivalent Circuits 5

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    Cha ter 2

    DIODE

    Part 3

    Diode Notation and Testing

    Chapter 2 DIODE, Part 3 Diode Notation and Testing 1

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    The notation frequently used for semiconductor diodes.

    Various type ofjunction diodes.

    Chapter 2 DIODE, Part 3 Diode Notation and Testing 2

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    ON state :

    The meter has ansource (~2mA) that willdefine the voltage level

    ~ . .

    Digital TesterOL indication:O en

    Chapter 2 DIODE, Part 3 Diode Notation and Testing 3

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    Chapter 2 DIODE, Part 3 Diode Notation and Testing 4

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    Cha ter 2

    DIODE

    Part 4

    Load Line Analysis

    Chapter 2 DIODE, Part 4 Load Line Analysis 1

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    Load Line AnalysisThe a lied load will have an im act on the oint or re ion of a device. A line can

    be drawn on the I-V characteristics of the device that represents the applied load.

    Kirchoffs voltage law

    Load

    Chapter 2 DIODE, Part 4 Load Line Analysis 2

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    Example 1: Determine (a) VDQ and IDQ (b) VR

    Chapter 2 DIODE, Part 4 Load Line Analysis 3

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    Example 2: Change R to 2kOhm. Determine (a) VDQ and IDQ (b) VR

    Chapter 2 DIODE, Part 4 Load Line Analysis 4

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    Example 3: Repeat example 1. Determine (a) VDQ and IDQ using approximate

    Chapter 2 DIODE, Part 4 Load Line Analysis 5

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    Example 4: Repeat example 2. Determine (a) VDQ and IDQ using approximate

    Chapter 2 DIODE, Part 4 Load Line Analysis 6

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    Example 5: Repeat example 1. Determine (a) VDQ and IDQ using ideal diode model

    Chapter 2 DIODE, Part 4 Load Line Analysis 7

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    Approximate and Ideal Diode Models

    rav was not employed because rav is typically muchLess than the other series elements of the network.

    rav was not employed because rav is typically muchLess than the other series elements of the network.

    Chapter 2 DIODE, Part 4 Load Line Analysis 8

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    Cha ter 2

    DIODE

    Part 4

    Series Diodes Configurations

    with DC Inputs

    Chapter 2 DIODE, Series Diode Configurations 1

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    Series Diode Configuration with DC Inputs

    Series diode configuration

    (1) Determining the state of the diode (2) Substituting the equivalent

    model for the on diode

    Chapter 2 DIODE, Series Diode Configurations 2

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    (1) Determining the state of the diode

    (2) Substituting the equivalent

    model for the off diode

    Chapter 2 DIODE, Series Diode Configurations 3

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    Example 6: Determine VD, VRand ID.

    Solution

    e app e vo tage esta s es a current nthe clockwise direction to match the arrow

    of the symbol and the diode is in the ONs a e .

    Series diode configuration

    Chapter 2 DIODE, Series Diode Configurations 4

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    Example 7: Repeat example 6 with the diode reversed.Determine V V and I .

    Solution

    in the diode symbol. Diode is in OFF stateresulting to open circuit.

    Series diode configuration

    1. An open circuit can have any voltage across its terminals, but the current is always 0 A.

    2. A short circuit has a 0V drop across its terminals, but the current is limited only by theSurrounding network.

    ource notat on

    Chapter 2 DIODE, Series Diode Configurations 5

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    Example 8: Determine VD, VRand ID.

    The level of the applied voltage is

    OFF Operating pointSeries diode configuration

    insufficient to turn the silicon diodeON. The point of operation on thecharacteristics shown in the figureestablishing the open circuit equivalent.

    Chapter 2 DIODE, Series Diode Configurations 6

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    Example 9: Determine VD, and ID.

    o u on:

    The resulting current has the same directionas e arrow ea s o e sym o s o o o es.

    Here, E=12V > (0.7V + 0.3V)= 1V.

    Determining the state of the diode and

    Chapter 2 DIODE, Series Diode Configurations 7

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    Example 10: Determine VD, Voand ID.The combination of aShort circuit in seriesWith an open circuit alwaysResults in an open circuit

    = .

    e erm n ng e s a e o e o e ansubstituting the equivalent model for the diodeSeries diode configuration

    Chapter 2 DIODE, Series Diode Configurations 8

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    Example 11: Determine I, V1 V2and Vo .

    Series diode configuration Determining the state of the diode andsubstituting the equivalent model for the diode

    Chapter 2 DIODE, Series Diode Configurations 9

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    Cha ter 2

    DIODE

    Configurations

    w t nputs

    Chapter 2 DIODE, Parallel and Series Diodes Conf. 1

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    Example 12: Determine Vo , I1 , ID1 and ID2 .

    Parallel diode configuration

    Determining the state of the diode and

    substitutin the e uivalent model for the diode

    Assuming diodes of similar characteristics,

    Chapter 2 DIODE, Parallel and Series Diodes Conf. 2

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    Example 13: Determine I.

    Parallel diode configurationDetermining the state of the diode and

    substituting the equivalent model for the diode

    Chapter 2 DIODE, Parallel and Series Diodes Conf. 3

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    Example 14: Determine Vo . The applied voltage will turn both diodes on. , , .

    the silicon diode would not match 0.3V across the Gediode as required by the fact that the voltage acrossparallel elements must be the same.

    Parallel diode configuration

    Determining the state of the diode andsubstituting the equivalent model for the diode

    Chapter 2 DIODE, Parallel and Series Diodes Conf. 4

    E l 15 D i I I d I

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    Example 15: Determine I1,I2and ID2 .

    Series and Parallel diode configuration

    eterm n ng t e state o t e o e an

    substituting the equivalent model for the diode

    Chapter 2 DIODE, Parallel and Series Diodes Conf. 5

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    Cha ter 2

    DIODE

    Chapter 2 DIODE, AND / OR Gates 1

    E ample 16 Determine V

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    Example 16: Determine V0 .

    Redrawn OR Gates

    Positive logic OR GatesFirst, assume that D1 is on and D2 is off.

    Vo = E - VD = 10V 0.7V = 9.3V (level 1)With 9.3V at the cathode (-) side of D2 and0V at the anode (+) side, D2 is in the off state.

    ur assump on s correc .

    Chapter 2 DIODE, AND / OR Gates 2

    Example 17: Determine V

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    Example 17: Determine V0 .

    Positive logic AND Gates

    Redrawn OR Gates

    With 10V at the cathode side of D1, it is assumed that D1 is in the off state even though

    1 .D2 is assumed to be in the on state due to the low voltage at the cathode side and theAvailability of the 10V source through the 1kOhm resistor.

    The voltage at Vo is 0.7V due to the forward-biased diode D2. With 0.7V at the anode ofD1 and 10V at the cathode, D1 is definitely in the off state.

    Chapter 2 DIODE, AND / OR Gates 3

    Ideal Diode

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    Ideal Diode

    Chapter 2 Ideal Diode 1