chemical vapor deposition of refractory metals and...
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Chemical Vapor Deposition ofRefractory Metals and Ceramics
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 168
Chemical Vapor Deposition ofRefractory Metals and Ceramics
Symposium held November 29-December 1, 1989, Boston,Massachusetts, U.S.A.
EDITORS:
Theodore M. BesmannOak Ridge National Laboratory, Oak Ridge, Tennessee, U.S.A.
Bernard M. GalloisStevens Institute of Technology, Hoboken, New Jersey, U.S.A.
IMIR1S1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City
Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA
Published in the United States of America by Cambridge University Press, New York
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© Materials Research Society 1990
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First published 1990 First paperback edition 2012
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isbn 978-1-107-41027-5 Paperback
Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.
This work was supported in part by the U.S. Army Research Office under Grant Number DAAL03-90-G-0014. The views, opinions, and/or findings contained in this report are those of the authors and should not be construed as an official Department of the Army position, policy, or decision unless so designated by other documentation.
This work was supported by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under Grant Number AFOSR 90-0081.
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
Contents
PREFACE xi
ACKNOWLEDGMENTS xi i i
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xv
PART I: FUNDAMENTALS/MODELING
•BENEFITS AND LIMITS OF THE THERMODYNAMIC APPROACH TOC.V.D. PROCESSES 3
C. Bernard and R. Madar
•PREDICTING THE CHEMISTRY IN CVD SYSTEMS 19Karl E. Spear and Ryan R. Dirkx
GAS PHASE REACTIONS RELEVANT TO CHEMICAL VAPORDEPOSITION: NUMERICAL MODELING 31
D. Burgess, Jr. and M.R. Zachariah
BOND GRAPHS FOR CVD PROCESSES 37Surya R. Kalidindi and Seshu B. Desu
CALCULATION OF TRANSPORT-SHIFTED-CVD PHASE DIAGRAMS 43Daniel E. Rosner and Joshua Collins
TRANSPORT PROPERTIES OF CVI PREFORMS AND COMPOSITES 49G.B. Freeman, T.L. Starr, and T.C. Elston
3-D MODELING OF FORCED-FLOW THERMAL-GRADIENT CVI FORCERAMIC COMPOSITE FABRICATION 55
Thomas L. Starr and Arlynn W. Smith
ANALYTICAL SIMULATION OF AN IMPROVED CVI PROCESS FORFORMING HIGHLY DENSIFIED CERAMIC COMPOSITES 61
Nyan-Hwa Tai and Tsu-Wei Chou
A MODEL FOR CHEMICAL VAPOR INFILTRATION OF FIBROUSSUBSTRATES 67
Rajesh R. Melkote and Klavs F. Jensen
MODELLING TRANSPORT, REACTION, AND PORE STRUCTUREEVOLUTION DURING DENSIFICATION OF CELLULAR OR FIBROUSSTRUCTURES 73
Stratis V. Sotirchos and Manolis M. Tomadakis
PART II: DIAGNOSTICS
BORAZINE ADSORPTION AND REACTION ON A Re(0001) SURFACE 81J.-W. He and D.W. Goodman
•Invited Paper
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EARLY GROWTH IN THE CHEMICAL VAPOR DEPOSITION OF TiNAND TiC AND MONITORING BY LASER SCATTERING 93
Max Klein and Bernard Gallois
LIGHT-SCATTERING MEASUREMENTS OF CVD SILICON CARBIDE 9 9B.W. Sheldon and T.M. Besmann
IN SITU REFLECTOMETRY DURING LPCVD TUNGSTEN GROWTH 107Jisk Holleman, Albert Hasper, and Jan Middelhoek
INITIAL STAGES IN THE GROWTH OF OXIDE THIN FILMS BY CVD 113Lisa A. Tietz, Scott R. Summerfelt, Gerald R. English,and C. Barry Carter
GAS PHASE DECOMPOSITION OF AN ORGANOMETALLIC CHEMICALVAPOR DEPOSITION PRECURSOR TO A1N: [Al (CHO oNHJ 3 119
Carmela C. Amato, John B. Hudson, andLeonard V. Interrante
MECHANISTIC ASPECTS OF THE DEPOSITION OF THIN ALUMINAFILMS DEPOSITED BY MOCVD 125
R.W.J. Morssinkhof, T. Fransen, M.M.D. Heusinkveld,and P.J. Gellings
GAS PHASE CHARACTERIZATION IN LP CVD PROCESSES BY APERFORMANT RAMAN EQUIPMENT : GAS TEMPERATURE IN THEVICINITY OF THE SUBSTRATE 131
R. Gaufres, P. Huguet, D. Boya, and J. Lafforet
GAS PHASE REACTIONS RELEVANT TO CHEMICAL VAPORDEPOSITION: OPTICAL DIAGNOSTICS 137
D. Burgess, Jr.
PART III: PROCESS-MICROSTRUCTURE RELATIONSHIPS
•CORRELATION AMONG PROCESS ROUTES, MICROSTRUCTURES ANDPROPERTIES OF CHEMICALLY VAPOR DEPOSITED SILICON CARBIDE 145
Robert F. Davis
MICROSTRUCTURAL CHARACTERIZATION OF MULTIPHASE COATINGSPRODUCED BY CHEMICAL VAPOR DEPOSITION 159
R.A. Lowden, K.L. More, T.M. Besmann, and R.D. James
CHEMICAL VAPOR DEPOSITION OF SILICON BORIDES 167T. Goto, M. Mukaida, and T. Hirai
CHARACTERIZATION OF SILICIDE FORMATION OF LPCVD-W BYMEANS OF RUTHERFORD BACKSCATTERING SPECTROMETRY ANDX-RAY DIFFRACTOMETRY ^ 173
S.-L. Zhang, R. Buchta, and M. Ostling
SELECTIVE CHEMICAL VAPOUR DEPOSITION OF TUNGSTEN USING./WF6 CHEMISTRYC.A. van der Jeugd, A.H. Verb rug g<G.C.A.M. Janssen, and S. Radelaar
SiH-/WF6 CHEMISTRY 179C.A. van der Jeugd, A.H. Verbruggen, G.J. Leusink,
•Invited Paper
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IDENTIFICATION OF W20O58 PHASE IN CVD TUNGSTEN FILMS 185M. Lawrence A. Dass, Siva Sivaram, and Bryan Tracy
INVESTIGATION OF CVD S-SiC SURFACES PRODUCED VIA A"NOVEL" SURFACE REPLICATION PROCESS 193
Aliki K. Collins, Joseph T. Keeley,Michael A. Pickering, and Raymond L. Taylor
INFLUENCE OF IMPURITIES AND MICROSTRUCTURE ON THERESISTIVITY OF LPCVD TITANIUM NITRIDE FILMS 199
M.J. Buiting and A.H, Reader
PART IV: MICROSTRUCTURE-MECHANICALPROPERTY RELATIONSHIPS
ADHESION OF DIAMOND FILMS ON VARIOUS SUBSTRATES 207Tyan-Ywan Yen, Cheng-Tzu Kuo, and S.E. Hsu
TUNGSTEN CARBIDE EROSION RESISTANT COATING FOR AEROSPACECOMPONENTS 213
D. Garg and P.N. Dyer
INTERNAL STRESSES IN AMORPHOUS MOCVD SiO2 FILMS 221Seshu B. Desu
INFLUENCE OF SUBSTRATE AND PROCESS PARAMETERS ON THEPROPERTIES OF CVD-SiC 227
A. Parretta, G. Giunta, E. Cappelli, V. Adoncecchi,and V. Vittori
EFFECTS OF DEPOSITION CONDITIONS ON THE MICROSTRUCTUREAND PROPERTIES OF CVD SiC 233
Eric Minford, Robert E. Stevens, Vincent L. Magnotta,Paul N. Dyer, Thomas R. Watkins, and David J. Green
INTERACTION OF TITANIUM WITH SiC COATED BORON FIBER 239Luchen Hwan, Beng Jit Tan, Steven L. Suib, andFrancis S. Galasso
OXIDATION RESISTANT COATINGS PRODUCED BY CHEMICAL VAPORDEPOSITION: IRIDIUM AND ALUMINUM OXYNITRIDE COATINGS 247
P. Netter and Ph. Campros
PART V: NOVEL/LARGE-SCALE TECHNOLOGIES
•APPLICATION OF AI CONTROL TO THE VLS SiC WHISKER PROCESS 255Peter D. Shalek and W.J. Parkinson
MORPHOLOGICAL EVOLUTION OF TITANIUM CARBIDE WHISKERS 267R. Mathur and B.M. Gallois
CHARACTERIZATION OF CERAMIC MATRIX COMPOSITES FABRICATEDBY CHEMICAL VAPOR INFILTRATION 273
D.P. Stinton, D.M. Hembree, Jr., K.L. More,B.W. Sheldon, and T.M. Besmann
•Invited Paper
vii
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THE EMERGENCE OF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION(PECVD) AS A VIABLE INDUSTRIAL COATING PROCESS 281
George Engle and James W. Warren
LASER CHEMICAL VAPOR DEPOSITION OF TiN FILMS 287B. Chen, N. Biunno, R.K. Singh, and J. Narayan
LASER INDUCED PHOTOCHEMICAL VAPOR DEPOSITION OF TUNGSTENON SILICON 293
A.J.P. van Maaren and W.C. Sinke
SILICON NITRIDE SYNTHESIS BY LASER PYROLYSIS OF ANAEROSOL-DISPERSED PRECURSOR 299
Tongsan D. Xiao, Peter R. Strutt, andKenneth E. Gonsalves
REACTIVE CHEMICAL VAPOR DEPOSITION (R.C.V.D.) AS AMETHOD FOR COATING CARBON FIBRE WITH CARBIDES 305
J. Bouix, C. Vincent, H. Vincent, and R. Favre
A LOW TEMPERATURE CVD PROCESS FOR TiN COATINGS 311A. Aguero, D. Little, and P. Lowden
PART VI: METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
*LOW TEMPERATURE MOCVD ROUTES TO THIN FILMS FROMTRANSITION METAL PRECURSORS 319
Gregory S. Girolami and John E. Gozum
LOW TEMPERATURE MOCVD OF SILICON-BASED CERAMIC FILMS 331Honghua Du, Yongwoong Bae, Bernard Gallois,and Kenneth E. Gonsalves
CHARACTERIZATION OF MOCVD GROWN EPITAXIAL CERAMIC OXIDETHIN FILMS 337
J.C. Parker, H.L.M. Chang, J.J. Xu, and D.J. Lam
PREPARATION, STRUCTURE AND PROPERTIES OF VO AND TiO«THIN FILMS BY MOCVD X 343
H.L.M. Chang, J.C. Parker, H. You, J.J. Xu,and D.J. Lam
STRUCTURE, COMPOSITION, AND PROPERTIES OF MOCVD ZrO«THIN FILMS 349
Seshu B. Desu, Tian Shi, and Chi K. Kwok
TITANIUM NITRIDE THIN FILMS: PROPERTIES AND APCVDSYNTHESIS USING ORGANOMETALLIC PRECURSORS 357
Renaud M. Fix, Roy G. Gordon, and David M. Hoffman
CHEMICAL VAPOR DEPOSITION OF NIOBIUM CARBIDE USING ANOVEL ORGANOMETALLIC PRECURSOR 363
Paul D. Stupik, Linda K. Cheatham, John J. Graham,and Andrew R. Barron
•Invited Paper
viii
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LOW-TEMPERATURE CHEMICAL VAPOR DEPOSITION OF RHODIUM ANDIRIDIUM THIN FILMS 3 69
David C. Smith, Steve G. Pattillo, Norman E. Elliott,Thomas G. Zocco, Carol J. Burns, Joseph R. Laia, andAlfred P. Sattelberger
ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION OF STRONTIUMTITANATE THIN FILMS 375
W.A. Feil, B.W. Wessels, L.M. Tonge, and T.J. Marks
HIGHLY RESOLVED GRADIENT PATTERNS IN GLASS BY MEANS OFCHEMICAL VAPOR DEPOSITION 381
E. Wolkow, H.D. Gafney, E. Mendoza, P. Wong,and A.L. Hanson
THE EFFECT OF METAL IMPREGNATION ON THE MICROSTRUCTUREOF POROUS VYCOR GLASS 3 87
D. Sunil, J. Sokolov, M.H. Rafailovich, E. Mendoza,E. Wolkow, H.D. Gafney, G.G. Long, P. Jemian, andA.L. Hanson
AUTHOR INDEX 39 5
SUBJECT INDEX 397
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 4 01
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Preface
The papers contained in this volume were originally presentedat the Symposium on the Chemical Vapor Deposition of RefractoryMetals and Ceramics held at the Fall Meeting of the MaterialsResearch Society in Boston, Massachusetts on November 29 -December lf 19 89. This symposium was sponsored by the Directorateof Electronic and Materials Sciences - Air Force Office ofScientific Research and the Army Research Office. The object ofthe symposium was to promote dialogue between scientists andengineers who are working in the field of chemical vapor deposi-tion of refractory materials. With this focus the symposium wasable to directly address issues which are often bypassed in othervapor deposition meetings that principally concentrate on low-temperature process for electronic materials.
The sessions in the symposium were designed to move smoothlyfrom fundamentals/model ing and diagnostics, emphasizing theunderstanding and monitoring of basic deposition processes,through process-microstructure and microstructural-mechanicalproperty relationships which deal with understanding and predict-ing deposit characteristics. Additional sessions dealt withnovel/large-scale technologies allowing some very innovative ideasto be presented, and metal-organic chemical vapor deposition,which is a blossoming area resulting in lower deposition tempera-tures and heretofore impossible to produce coatings.
The invited papers, presented by leaders in the field, laidthe groundwork for the various sessions of the symposium. Theinvited papers on fundamentals/modeling clearly demonstrated thehigh degree of sophistication that has just recently been obtainedin understanding and modeling chemical vapor deposition, andhighlighted the long way we still have to go. The invited paperson process-property relationships displayed the breadth of ourunderstanding, which is just beginning to depart from theempirical. The invited paper on metal-organic chemical vapordeposition clearly demonstrated the enormous versatility of thetechnique, as well as its certain pitfalls.
January 19, 19 90 T.M. BesmannB.M. Gallois
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
Acknowledgments
The symposium cochairs would like to thank the session chairswho did an excellent job of organizing and running the sessions.These very helpful individuals were:
E.A.L.C.W.J.N.A.P.N.F.S.
WhittakerHammondLackeyScovilleDyerGalasso
D. GaillardK. GonsalvesD.P. Stinton
The invited speakers, leaders in the field, expendedsignificant effort in contributing to this volume, and we wouldlike to acknowledge them:
C. BernardR. MadarK.E.R.F.P.D.W.J.G.S.J.E.
SpearDavisShalekParkinsonGirolamiGozum
We are also greatly indebted to C.A. Valentine who organized,kept track, revised, mailed, and did everything else necessary toprepare this book for publication by the MRS.
Finally, we sincerely appreciate the financial supportprovided by the Directorate of Electronic and Materials Sciences- Air Force Office of Scientific Research and Division of MaterialScience of the Army Research Office.
xiii
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Recent Materials Research Society Symposium Proceedings
Volume 145—III-V Heterostructures for Electronic/Photonic Devices, C.W. Tu,V.D. Mattera, A.C. Gossard, 1989, ISBN: 1-55899-018-6
Volume 146—Rapid Thermal Annealing/Chemical Vapor Deposition and IntegratedProcessing, D. Hodul, J. Gelpey, M.L. Green, T.E. Seidel, 1989,ISBN: 1-55899-019-4
Volume 147—Ion Beam Processing of Advanced Electronic Materials, N.W. Cheung,A.D. Marwick, J.B. Roberto, 1989, ISBN: 1-55899-020-8
Volume 148—Chemistry and Defects in Semiconductor Heterostructures, M. Kawabe,T.D. Sands, E.R. Weber, R.S. Williams, 1989, ISBN: 1-55899-021-6
Volume 149—Amorphous Silicon Technology-1989, A. Madan, M.J. Thompson,P.C. Taylor, Y. Hamakawa, P.G. LeComber, 1989, ISBN: 1-55899-022-4
Volume 150—Materials for Magneto-Optic Data Storage, CJ. Robinson, T. Suzuki,CM. Falco, 1989, ISBN: 1-55899-023-2
Volume 151—Growth, Characterization and Properties of Ultrathin Magnetic Films andMultilayers, B.T. Jonker, J.P. Heremans, E.E. Marinero, 1989,ISBN: 1-55899-024-0
Volume 152—Optical Materials: Processing and Science, D.B. Poker, C. Ortiz, 1989,ISBN: 1-55899-025-9
Volume 153—Interfaces Between Polymers, Metals, and Ceramics, B.M. DeKoven,AJ. Gellman, R. Rosenberg, 1989, ISBN: 1-55899-026-7
Volume 154—Electronic Packaging Materials Science IV, R. Jaccodine, K.A. Jackson,E.D. Lillie, R.C. Sundahl,1989, ISBN: 1-55899-027-5
Volume 155—Processing Science of Advanced Ceramics, LA. Aksay, G.L. McVay,D.R. Ulrich, 1989, ISBN: 1-55899-028-3
Volume 156—High Temperature Superconductors: Relationships Between Properties,Structure, and Solid-State Chemistry, J.R. Jorgensen, K. Kitazawa,J.M. Tarascon, M.S. Thompson, J.B. Torrance, 1989, ISBN: 1-55899-029
Volume 157—Beam-Solid Interactions: Physical Phenomena, J.A. Knapp, P. Borgesen,R.A. Zuhr, 1989, ISBN 1-55899-045-3
Volume 158—In-Situ Patterning: Selective Area Deposition and Etching, R. Rosenberg,A.F. Bernhardt, J.G. Black, 1989, ISBN 1-55899-046-1
Volume 159—Atomic Scale Structure of Interfaces, R.D. Bringans, R.M. Feenstra,J.M. Gibson, 1989, ISBN 1-55899-047-X
Volume 160—Layered Structures: Heteroepitaxy, Superlattices, Strain, andMetastability, B.W. Dodson, L.J. Schowalter, J.E. Cunningham,F.H. Pollak, 1989, ISBN 1-55899-048-8
Volume 161—Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films,Quantum Well Structures and Dilute Magnetic Systems, J.F. Schetzina,F.J. Bartoli, Jr., H.F. Schaake, 1989, ISBN 1-55899-049-6
Volume 162—Diamond, Boron Nitride, Silicon Carbide and Related Wide BandgapSemiconductors, J.T. Glass, R.F. Messier, N. Fujimori, 1989,ISBN 1-55899-050-X
Volume 163—Impurities, Defects and Diffusion in Semiconductors: Bulk and LayeredStructures, J. Bernholc, E.E. Haller, D.J. Wolford, 1989,ISBN 1-55899-051-8
Volume 164—Materials Issues in Microcrystalline Semiconductors,P.M. Fauchet, C.C. Tsai, K. Tanaka, 1989, ISBN 1-55899-052-6
Volume 165—Characterization of Plasma-Enhanced CVD Processes, G. Lucovsky,D.E. Ibbotson, D.W. Hess, 1989, ISBN 1-55899-053-4
Volume 166—Neutron Scattering for Materials Science, S.M. Shapiro, S.C. Moss,J.D. Jorgensen, 1989, ISBN 1-55899-054-2
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Cambridge University Press978-1-107-41027-5 - Materials Research Society Symposium Proceedings: Volume 168:Chemical Vapor Deposition of Refractory Metals and CeramicsEditors: Theodore M. Besmann and Bernard M. GalloisFrontmatterMore information
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 167—Advanced Electronic Packaging Materials, A. Barfknecht, J. Partridge,C-Y. Li, CJ. Chen, 1989, ISBN 1-55899-055-0
Volume 168—Chemical Vapor Deposition of Refractory Metals and Ceramics,T.M. Besmann, B.M. Gallois, 1989, ISBN 1-55899-056-9
Volume 169—High Temperature Superconductors: Fundamental Properties and NovelMaterials Processing, J. Narayan, C.W. Chu, L.F. Schneemeyer,D.K. Christen, 1989, ISBN 1-55899-057-7
Volume 170—Tailored Interfaces in Composite Materials, C.G. Pantano, EJ.H. Chen,1989, ISBN 1-55899-058-5
Volume 171—Polymer Based Molecular Composites, D.W. Schaefer, J.E. Mark, 1989,ISBN 1-55899-059-3
Volume 172—Optical Fiber Materials and Processing, J.W. Fleming, G.H. Sigel,S. Takahashi, P.W. France, 1989, ISBN 1-55899-060-7
Volume 173—Electrical, Optical and Magnetic Properties of Organic Solid-StateMaterials, L.Y. Chiang, D.O. Cowan, P. Chaikin, 1989,ISBN 1-55899-061-5
Volume 174—Materials Synthesis Utilizing Biological Processes, M. Alper, P.D. Calvert,P.C. Rieke, 1989, ISBN 1-55899-062-3
Volume 175—Multi-Functional Materials, D.R. Ulrich, F.E. Karasz, AJ. Buckley,G. Gallagher-Daggitt, 1989, ISBN 1-55899-063-1
Volume 176—Scientific Basis for Nuclear Waste Management XIII, V.M. Oversby,P.W. Brown, 1989, ISBN 1-55899-064-X
Volume 177—Macromolecular Liquids, C.R. Safinya, S.A. Safran, P.A. Pincus, 1989,ISBN 1-55899-065-8
Volume 178—Fly Ash and Coal Conversion By-Products: Characterization, Utilizationand Disposal VI, F.P. Glasser, R.L. Day, 1989, ISBN 1-55899-066-6
Volume 179—Specialty Cements with Advanced Properties, H. Jennings, A.G. Landers,B.E. Scheetz, I. Odler, 1989, ISBN 1-55899-067-4
MATERIALS RESEARCH SOCIETY MONOGRAPH
Atom Probe Microanalysis: Principles and Applications to Materials Problems,M.K. Miller, G.D.W. Smith, 1989; ISBN 0-931837-99-5
Earlier Materials Research Society Symposium Proceedings listed in the back.
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