configurations - philadelphia university...electronic devices and circuit theory, 9th ed., boylestad...

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9 th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 1 Philadelphia University Faculty of Engineering Communication and Electronics Engineering Bipolar Junction Transistor Configurations: Common Base Configuration Fig. 3.2 Types of transistors: (a) pnp; (b) npn. Fig. 3.6 Notation and symbols used with the common-base configuration: npn transistor. Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.

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Page 1: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 1

Philadelphia University Faculty of Engineering

Communication and Electronics Engineering

Bipolar Junction Transistor

Configurations:

Common Base Configuration

Fig. 3.2 Types of transistors: (a) pnp; (b) npn.

Fig. 3.6 Notation and symbols used with the common-base configuration: npn transistor.

Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.

Page 2: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 2

Common Emitter Configuration

Common Collector Configuration

Fig. 3.13 Notation and symbols used with the common-emitter configuration: npn transistor

Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b) base characteristics.

Fig. 3.20 Notation and symbols used with the common-collector configuration: (a) pnp transistor; (b) npn transistor.

Page 3: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 3

Operating Point

Fixed Bias Circuit

Fig. 4.1 Various operating points within the limits of operation of a transistor.

Fig. 4.2 Fixed-bias circuit.

Fig. 4.3 DC equivalent of Fig. 4.2.

Page 4: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 4

Fig. 4.4 Base–emitter loop.

Fig. 4.5 Collector–emitter loop.

Fig. 4.7 DC fixed-bias circuit for Example 4.1.

Fig. 4.9 Determining ICsat. Fig. 4.10 Determining ICsat for the fixed-bias configuration.

Page 5: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 5

Example 4.1.:

Example 4.3:

Page 6: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 6

Emitter Bias

Fig. 4.17 BJT bias circuit with emitter resistor.

Fig. 4.18 Base–emitter loop.

Fig. 4.19 Network derived from the result of Fig. 4.18

Fig. 4.20 Reflected impedance level of RE.

Page 7: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 7

Fig. 4.21 Collector–emitter loop.

Fig. 4.14 Effect of an increasing level of RC on the load line

and the Q-point.

Fig. 4.15 Effect of lower values of VCC on the load line and the Q-point.

Page 8: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 8

Example 4.4:

Fig. 4.22 Emitter-stabilized bias circuit for Example 4.4.

Page 9: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II 9

Example 4.7:

Fig. 4.31 Beta-stabilized circuit for Example 4.7.

Page 10: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 4.15:

Fig. 4.40 Collector feedback with RE = 0Ω

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 4.16: Determine VC and VB for the network of Fig. 4.41.

Page 12: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 4.17:

Fig. 4.42 Common-base configuration.

Page 13: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Design Operation

Example 4.19:

Fig. 4.47 Example 4.19.

Fig. 4.48 Example 4.20.

Page 14: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 4.20:

Page 15: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Transistor Switching Network

Page 16: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 4.24:

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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AC Analysis: • A model is an equivalent circuit that represents the AC characteristics of the

transistor.

Page 18: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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• A model uses circuit elements that approximate the behavior of the transistor. • There are two models commonly used in small signal AC analysis of a

transistor: – re model – Hybrid equivalent model

The re Transistor Model:

BJTs are basically current-controlled devices, therefore the re model uses a diode and a current source to duplicate the behavior of the transistor. One disadvantage to this model is its sensitivity to the DC level. This model is designed for specific circuit conditions.

Common Base Configuration

Common Emitter Configuration

Fig. 5.6 (a) Common-base BJT transistor; (b) re model for the configuration of (a).

Fig. 5.7 Common-base re equivalent circuit.

Fig. 5.9 Defining Av = Vo/Vi for the common-base configuration.

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Common Collector Configuration Use the common-emitter model for the common-collector configuration.

The Hybrid Equivalent Model: The following hybrid parameters are developed and used for modeling the transistor. These parameters can be found in a specification sheet for a transistor:

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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• hi = input resistance • hr = reverse transfer voltage ratio (Vi/Vo) 0 • hf = forward transfer current ratio (Io/Ii) • ho = output conductance

Fig. 5.22 Complete hybrid equivalent circuit.

Fig. 5.23 Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent circuit

Fig. 5.24 Common-base configuration: (a) graphical symbol; (b) hybrid equivalent circuit.

Page 21: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Common-Emitter re vs. h-Parameter Model

Page 22: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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BJT Amplifier Circuits:

Common Emitter Configurations:

Common Emitter Fixed-bias • The input is applied to the base • The output is from the collector • High input impedance • Low output impedance • High voltage and current gain • Phase shift between input and output is 180

Fig. 5.34 Common-emitter fixed-bias configuration.

Fig. 5.35 Network of Fig. 5.34 following the removal of the effects of VCC, C1 and C2.

Fig. 5.36 Substituting the re model into the network of Fig. 5.35.

Fig. 5.37Determining Zo for the network of Fig. 5.36.

Co 10Rre

Cv

e

oC

i

ov

r

RA

r

)r||(R

V

VA

eBCo r10R ,10Rri

eBCo

oB

i

oi

A

)r)(RR(r

rR

I

IA

C

ivi R

ZAA

Page 23: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Page 24: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 5.4:

Solution:

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Common Emitter Voltage-divider Bias

Fig. 5.40 Voltage-divider bias configuration.

Fig. 5.41Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.40.

eCo

Co

r10R ,10Rri

oi

10Rrei

oi

eCo

o

i

oi

I

IA

rR

R

I

IA

)rR)(R(r

rR

I

IA

C

ivi R

ZAA

Co 10Rre

C

i

ov

e

oC

i

ov

r

R

V

VA

r

r||R

V

VA

Fig. 5.42 Example 5.5.

Page 26: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 5.5:

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Solution:

Page 28: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Common Emitter Bias 1) Unbypassed :

Fig. 5.43 CE emitter-bias configuration.

Fig. 5.44 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.43.

Fig. 5.46 Example 5.6.

Eb

Eeb

RZE

C

i

ov

)R(rZEe

C

i

ov

b

C

i

ov

R

R

V

VA

Rr

R

V

VA

Z

R

V

VA

bB

B

i

oi ZR

R

I

IA

C

ivi R

ZAA

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Page 30: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 5.6:

Solution:

Common Base Configuration • The input is applied to the emitter. • The output is taken from the collector. • Low input impedance. • High output impedance. • Current gain less than unity. • Very high voltage gain. • No phase shift between input and output.

Page 31: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Fig. 5.57 Common-base configuration.

Fig. 5.58 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.57.

e

C

e

C

i

ov r

R

r

R

V

VA

1I

IA

i

oi

Page 32: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 5.11:

Solution:

Common Collector (Emitter follower) Configuration • The input is applied to the base. • The output is taken from the emitter. • The output voltage is slightly less than the input one (VoVi) • It is use for impedance-matching purposes • High input impedance. • Low output impedance. • No phase shift between input and output.

Fig. 5.59 Example 5.11.

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Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Page 34: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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Example 5.10:

Solution:

Fig. 5.54 Example 5.10.

Page 35: Configurations - Philadelphia University...Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky Lecturer: Dr. Omar Daoud Part II 18 • A model uses circuit elements

Module: Electronics I Module Number: 610/650221-222 Electronic Devices and Circuit Theory, 9th ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud Part II

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