copyright prentice-hall chapter 28 fabrication of microelectronic devices

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Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

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Page 1: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Copyright Prentice-Hall

Chapter 28Fabrication of Microelectronic Devices

Page 2: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Parts Made by Chapter 28 Processes

(a) (b) (c)

(a) A completed eight-inch wafer with completed dice. (b) A single chip in a ball-grid array (BGA) with cover removed. (c) A printed circuit board. Source: Courtesy of Intel Corporation.

Q18.2 (25) Point out the ball grid array in Figure 28.1.

Page 3: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Fabrication of Integrated Circuits

Outline of the general fabrication sequence for integrated circuits.

Page 4: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Fabrication of MOS (metal-oxide semiconductor) Transistor

Cross-sectional views of the fabrication of a MOS transistor. Source: After R. C. Jaeger.

Page 5: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Allowable Particle Size Counts for Clean Rooms

Allowable particle size counts for different clean room classes.

Page 6: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Crystallographic Structure and Miller Indices for Silicon

Crystallographic structure and Miller indices for silicon. (a) Construction of a diamond-type lattice from interpenetrating face-centered cubic-cells; one of eight penetrating cells is shown. (b) Diamond-type lattice of silicon; the interior atoms have been shaded darker than the surface atoms. (c) Miller indices for a cubic lattice.

Page 7: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Finishing Operations on a Silicon Ingot to Produce

Wafers

Finishing operations on a silicon ingot to produce wafers (a) sawing the ends off the ingot; (b) grinding of the end and cylindrical surfaces of a silicon ingot; (c) machining of a notch or flat; (d) slicing of wafers; (e) end grinding of wafers; (f) chemical-mechanical polishing of wafers.

Page 8: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

CVD Diagrams

Schematic diagrams of (a) a continuous, atmospheric-pressure CVD reactor and (b) a low-pressure CVD. Source: After S. M. Sze.

Page 9: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Silicon Dioxide Growth

Growth of silicon dioxide showing consumption of silicon. Source: After S. M. Sze.

Page 10: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

General Characteristics of Lithography Techniques

Comparison of lithography techniques.

Page 11: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Spinning of Organic Coating on Wafer

Spinning of an organic coating on a wafer.

Page 12: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Techniques of Pattern Transfer

Schematic illustration of (a) wafer stepper technique to pattern transfer and (b) step-and-scan technique.

Page 13: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Pattern Transfer by Photolithography

Pattern transfer by photolithography. Note that the mask in Step 3 can be a positive or negative image of the pattern.

Page 14: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Moore’s Law

Illustration of Moore’s law. Source: After M. Madou.

Page 15: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Etching Directionality

Etching directionality. (a) Isotropic etching: etch proceeds vertically and horizontally at approximately the same rate, with significant mask undercut. (b) Orientation-dependant etching (ODE): etch proceeds vertically, terminating on {111} crystal planes with little mask undercut. (c) Vertical etching: etch proceed vertically with little mask undercut. Source: Courtesy of K. R. Williams, Agilent Laboratories.

Page 16: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Application of Boron Etch Stop and Back Etching to Form Membrane and Orifice

Application of a boron etch stop and back etching to form a membrane and orifice. Source: After Brodie, I., and Murray, J.J., The Physics of Microfabrication, Plenum Press, 1982.

Page 17: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Machining Profiles Associated with Dry-Etching

Machining profiles associated with different dry-etching techniques: (a) sputtering; (b) chemical; (c) ion-enhanced energetic; (d) ion-enhanced inhibitor. Source: After M Madou.

Page 18: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Holes Generated from Square Mask

Various holes generated from a square mask in: (a) isotropic (wet) etching; (b) orientation-dependant etching (ODE); (c) ODE with a larger hole; (d) ODE with a rectangular hole; (e) deep reactive-ion etching; and (f) vertical etching. Source: After M. Madou.

Page 19: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Interconnection of Integrated Circuit Hierarchy

Connections between elements in the hierarchy for integrated circuits.

Page 20: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Two-Level Metal Interconnect Structures

(a) Scanning electron microscope (SEM) photograph of a two-level metal interconnect. Note the varying surface topography. (b) Schematic illustration of a two-level metal interconnect structure. Source: (a) Courtesy of National Semiconductor Corporation. (b) After R. C. Jaeger.

Page 21: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Wire Bonds Connecting Package Leads to Die Bonding Pads

(a) SEM photograph of wire bonds connecting package leads (left-hand side) to die bonding pads. (b) and (c) Detailed views of (a). Source: Courtesy of Micron Technology, Inc.

(a) (b) (c)

Page 22: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Thermosonic Welding of Gold Wires

Schematic illustration of thermosonic welding of gold wires from package leads to bonding pads.

Page 23: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

IC Packages

Schematic illustration of various IC packages: (a) dual-in-line package (DIP); (b) flat, ceramic package; (c) common surface-mount configurations; (d) ball-grid arrays.

Page 24: Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices

Circuit Board Structures and Features

Printed circuit board structures and design features.