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    Procese tehnologice avansate

    Titularul de disciplin:Prof. Dr. Ing. Dan Dasclu

    Cerc.st. gr. I, dr. Ing. Mircea Dragoman

    Dr. Emil Mihai Pavelescu (IMT).

    [email protected]

    Cursul 6

    Metode de autoasamblare

    Metode de crestere prin matrite (template)

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    Semiconductor doping is a key technological process in microelectronics andaccompanies the deposition processes. It is well known that p- or n-doping of asemiconductor changes significantly the electrical, chemical and mechanicalcharacteristics of semiconductors. These changes are often referred to as thefunctionalization or engineering of the material. The electrical changes areused to produce almost any active electronic component, such as transistors anddiodes, while the mechanical changes create MEMS devices with prescribed

    mechanical characteristics. Impurities ofp- or n-type are controllable introducedin intrinsic silicon via diffusion into furnaces at high temperatures from liquid or solidsources or via ion implantation techniques, which are more accurate with respect tothe amount of impurities/area and the prescribed impurity profile.

    The variety of functionalization techniques at nanoscale is much richercompared to that of microscale transistors, diodes and integrated circuits.The doping is still used, for example, for nanotube transistors, but the

    functionalization of nanowires or dots can be done via oxygenation,hydrogenation, adsorbing of molecules, biomolecules etc

    Semiconductor doping

    Doping by diffusion

    Typical doping

    concentration

    1015-1019atoms/cm3

    Procese tehnologice avansate

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    Feature size (nm)

    1000 100 10 1 0.1

    SUBMICRON

    TECHNOLOGYNANOTECHNOLOGY ATOM TECHNOLOGY

    EB

    FIB

    EUV

    Optical

    AFM, STM

    Atom lithography

    Nanoimprint

    Next lecture

    Procese tehnologice avansate

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    Self-Assembly Techniques

    The self-assembly process refers to the spontaneous organization of various components (molecules or

    various nanosize objects such as nanoparticles) into a single, ordered aggregate. The organization process is

    made into a desired structure via physical, chemical, or biochemical interactive processes involving, for

    example, electrostatic and surface forces, hydrophobic and hydrophilic chemical interactions. All these

    processes, irrespective of their origin, are very selective and reject defects so that the resulting desired

    structure is characterized by a high degree of perfection

    The Langmuir-Blodgett (LB)technique dedicated to thin film realization is a well spread self-

    assembly technique in which the organized aggregate is built by growing one monolayer at a

    time. A monolayer of a desired material, which is initially adsorbed at a gas-liquid interface, is

    transported to a substrate on which the self-assembly structure will be grown. For example, a

    monolayer of some molecular species, such as a fatty acid, is spread over the surface of the water.In the water there is a glass microscope slide, which plays the role of the self-assembly substrate.

    If we pull out the glass slide the monolayer will be attached to it. If we then pass the glass slide

    several times through the water surface we will deposit on it a monolayer at each passing .The

    LB technique is implemented with specialized instruments comprising a Langmuir trough, a

    dipping device for the substrate that will be raised or lowered, and a movable barrier controlled

    by a pressure sensor, which slides on the gas-liquid interface to maintain a certain surfacepressure

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    Water

    Fat acid

    Monolayer Glass plate

    LB technique

    Although 2D gold, nanoparticle arrays,

    semiconducting quantum dots and

    polymeric films were realized usingthe LB technique, the method is quite

    difficult and requir esexpensive

    instrumentation

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    The electrostatic self-assemblyis realized through the electrostaticinteraction between molecules or nanoparticles. This self-assembly technique

    originates from the fabrication of multilayer films where each layer is composed of

    positive- and negative-charged colloid particles such as Si and Al. The method is

    widespread in the implementation of nanostructured films containing metals,

    semiconductors, magnetic materials, polymers, or organic molecules. The resulting

    film is uniform and stable due to strong ionic bonds between negative- andpositive-charged particles, and the defects are minimized due to the repulsive

    force between the particles involved in the process. The utilization of polymers

    in combination with layers of charged nanoparticles is the best way to minimize

    the defects. The electrostatic self-assembly process starts with the immersion of

    a clean substrate into a cationic solution, followed by a dip of the substrate

    coated with cations into an anionic solution where the adsorption of anionicmolecules takes place at a molecular level.For example, positively charged gold

    nanoparticles are self-assembled on a negative glass substrate by immersion into 4-

    ATP(aminotiophenol)-capped gold solution with pH = 4. A layer of negatively charged

    Ag nanoparticles can be further deposited by immersion of the glass coated with Au

    particles into a 4-CTP(carboxythiophenol)-capped silver solution with pH = 8.5 Thus, it

    is possible to obtain a heterostructure consisting of successive layers of Au and Agnanoparticles.

    Procese tehnologice avansate

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    Cationic

    solutionAnionic

    solution

    Water

    water

    RINSE DRY RINSE DRY

    Water

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    The chemical self-assembly methods are the most commonly used

    techniques. Among them, SAM (self-assembled monolayers) and MPC(monolayer-protected clusters) are the most prominent. SAM deals withthe spontaneous formation of monolayers via immersion of a suitablesubstrate into a solution, while MPC refers to nanoclusters whose surface isderivatized by ligand molecules with the help of chemisorption

    Biomolecular self-assembly uses DNA or proteins as basic constituents to

    realize: 1) biomolecular-metal complexes such as DNA-Au complexes, 2)self-assembly of semiconducting nanoparticles such as CdSe quantum dotensembles, or 3) functionalized metallic nanoparticles.

    Au substrate Au

    nanoparticleAlkanethiol

    molecules

    SAM MPC

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    Procese tehnologice avansate

    DNA origami

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    Nanoparticles

    The physical properties, and especially the electronic structure of metal nano-

    particles, are very different from those of bulk metals and are strongly dependenton their size. For example, the conduction band of bulk metals is replaced by

    discrete energy states in a metal nanoparticle. Thus, the metal particle behaves like

    a quantum dot, in which electrons are confined in all directions, in contrast with thefree electrons of bulk metals. Metal particles covered with organic molecules such as

    thiols are able to self-organize in 1D, 2D and 3D arrays. The discreteness of

    electronic states in a metal nanoparticle is characterized by the Kubo gap (i.e., the

    average spacing between successive quantum levels)

    nE 3/4 Fwhere EFis the Fermi energy, and nis the number of electrons in the nano-

    particle. The nanoparticle is metallic if :

    TkB

    For example, a silver particle with a diameter of 3 nm, for

    which = 10 meV, is metallic at room temperature sincekBT

    =25 meV for T= 300 K.

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    CdS (semiconductor nanoparticles)

    Gold substrate

    CdS (semiconductor nanoparticles)

    Gold substrate

    There are not only metal nanoparticles, but also semiconductor nanoparticles

    such as silicon nanoparticles, III-V nanoclusters, elemental II-VI semiconductorquantum dots in solution or gaseous phases.

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    Nanowires

    A nanowire is a metallic, semiconducting, superconducting or magnetic physical system,which is confined in two dimensions. The nanowire has a transverse area of a few nm and

    can attain 100300 nm in length, although longer nanowires, up to 1 m, have also been

    fabricated. Nanowires can be realized via many methods.

    Aluminium

    Anodized aluminaSourcematerial

    Template synthesis

    SiO2

    Si Si Si

    MetalCracksNanowire array Top

    view

    Self assembly

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    Nanowires with ultra-small diameters are grown using CVD or MOCVD. The nanowire

    precursor material is heated to produce vapors that penetrate the nanopores of thetemplate, which is then cooled to get the solidified nanowires. Nearly single-crystal

    nanowires are obtained with the CVD method, while in the rest of the above-mentioned

    methods mainly polycrystalline nano-wires are fabricated. Single-crystal nanowires of Bi,

    GaN, GaAs, and InAs, with diameters less than 10 nm, can be grown with the CVD

    techniques. Carbon nanotubes (CNTs), are also grown in alumina templates via CVD

    techniques. CNTs with very small diameters, of a few nm, can be grown by replacing the

    alumina template with a zeolite template.The vapor-liquid-solid (VLS) nanowire growthmethod is based on the fact that the vapors (V) of the source material can be absorbed into

    a liquid (L) droplet of a catalyst. The nanowire is obtained due to the solidification (S) of the

    source material as a result of the saturation of the liquid alloy followed by a nucleation

    process, which creates a preferential site for further deposition at the liquid boundary.

    Growth

    direction

    Vapors (V)

    Liquid catalyst

    (L)

    Nanowire (S)

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    Millions of CNTs can be aligned and integrated using a large-scale assembly technique

    inspired from biomolecular self-assembly processes . In this method, chemically

    functionalized patterns on a surface are first realized, on which millions of CNTs spread

    in a solution are then aligned. Two distinct regions coated via direct deposition with polar

    groups and nonpolar groups, respectively, create the functionalization of the surface. By

    placing the functionalized surface into a liquid suspension containing millions of CNTs

    the nanotubes are attracted by the polar regions and millions of CNTs are aligned in less

    than 10 s, The electrostatic attraction force rotates the CNTs towards the polar regionand confines them only in this region. The efficiency of alignment is very high, of about

    90%.

    Polar region

    Gold surface

    Rotationtowards polar

    region

    Nonpolar

    region

    Procese tehnologice avansate

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    Dielectrophoresis(or DEP) is a phenomenon in which a forceis exerted

    on a dielectricparticle when it is subjected to a non-uniform electricAll

    particles exhibit dielectrophoretic activity in the presence of electric fields.

    However, the strength of the force depends strongly on the medium and

    particles' electrical properties, on the particles' shape and size, as well as

    on the frequency of the electric field. Consequently, fields of a particular

    frequency can manipulate particles with great selectivity. This has allowed,

    for example, the separation of cells or the orientation and manipulation ofnanoparticles and nanowires.

    Procese tehnologice avansate

    http://en.wikipedia.org/wiki/Forcehttp://en.wikipedia.org/wiki/Dielectrichttp://en.wikipedia.org/wiki/Electric_fieldhttp://nanotechweb.org/articles/journal/5/10/2/1http://nanotechweb.org/articles/journal/5/10/2/1http://en.wikipedia.org/wiki/Electric_fieldhttp://en.wikipedia.org/wiki/Dielectrichttp://en.wikipedia.org/wiki/Force
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    CNT

    interconnect

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    Al template

    Si nanowire

    ZnO

    GaN CNT

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