DBH Automotive Program

Aug, 2012

2 / 16

DBH Automotive Program

DBH Automotive Quality Policy

– Driving Continuous Improvement to Supply Long-term Reliable Product

– Achieving Quality Level in All that We Do to Exceed Customer Expectations

– Screening Controls with Visibility & Traceability in the Manufacturing Process

All DBH Fabs Certified ISO/TS16949 since 2003

– Integrated Quality Management System

DBH Automotive Program

– Robust Technology & Design Kit

– Rigorous Process Qualification Criteria

– Closed-loop CIP (Continuous Improvement Plan) Flow

– Tightened Defect Management and Yield Performance

– FMEA (Failure Mode and Effect Analysis)

– 15 Years Record Retention

– Fully Equipped Failure Analysis & 8D Problem Solving

3 / 16

Many Concentration Areas

Dongbu HiTek

Automotive

Package

Process Technology

Rich Component Set

Good Mis-Matching

Low Noise

Best-in-Class Ron

Design Kit

180C SPICE Models

IP Characterization

NVM Characterization

Robust ESD

Automotive IP

Differentiated Blocks

Proven IP Providers

IP Tailored to Process

Wafer Fabs

Rigorous Change Control

DPPM & Cpk Focus

Certifications

Dual-Fab Strategy

Reliability

Grade-0 Mission Profile

150C Characterization

Integral to Process Dev’t

Safe Operating Area

Ecosystem Partners

Automotive Expertise

Design Houses

Package Houses

4 / 16

Technology Features

Baseline: 1P3M (up to 4M)

M1 Pitch: 1.0 µm

Top Metal: 3 μm Al (Option)

LVCMOS: 3.3V or 5V

HVCMOS: 8V

CMOS: Low-VT

CMOS: Isolated

BD350 – 0.35um, 60V Automotive Process

V-NPN LSD LDMOS 3.3V CMOS

NLDMOS: 7V – 60V

PLDMOS: 8V – 60V

DECMOS: 12V – 60V

NPN: 15V, 25V

RES: Poly 320, 2K Ω/sq

CAP: 5V MIM 1.87 fF/µm2

NVM: Fuse, MTP

PDK: Cadence, Others

Available: Now

Dev’d for Automotive

Char’d for Automotive

Qual’d for Automotive

P+ Substrate

NBL, Epi, & Deep N+

Guard Rings

Multiple Fabs

200 WAS Parameters

K’s of Wafers/Month

5 / 16

Technology Features

MS180 – 0.18um, 1.8V/3.3V Automotive Process

0.18µm 1Poly 6Metal Dual Gox Process for Mixed Signal

Certified by Automotive Customer for Automotive Ethernet Solution

Devices

LV CMOS: 1.8V, HV CMOS : 3.3V

Isolated CMOS by Deep-Nwell (+1 mask)

PNP: 1.8V Vertical/Lateral, 3.3V Vertical

NPN: 1.8V Vertical

Capacitor: 3.3V MIM 1.0 fF/µm2 (+1 mask)

High-R Resistor: 1Kohm/sq (+1 mask)

Cadence Process Design Kits (PDK)

Standard Cell Library, IO, Memory Compiler

6 / 16

DBH Certification Roadmap

Quality Management System

ISO/TS16949 (Dec.09, 2003, BSI / IATF) for Automotive

Occupational Health & Safety Management System

OHSAS18001 (Nov.03, 2004, URS / UKAS)

Information Security

ISO27001 (Oct.02, 2006, BSI / UKAS)

Environmental Management System

ISO14001(Jan.24, 2002, URS / UKAS)

Quality Management System

ISO9001(Dec.09, 2003, BSI / IATF)

ISO/TS16949

OHSAS18001

ISO27001

Sony GP

ISO9001

Green Partner Environmental

- Sony GP (Jun.12, 2006)

- Samsung S-P (Oct.15, 2010)

- QC 080000 HSPM

(Jun.19.2011)

ISO14001

Samsung S-P QC 080000

Quality Management

System

- ISO13485 for Medical

(Dec.13,2011, BSI/UKAS)

ISO13485

US Defense Military DLA Qualified Fab Supplier

- Nov.30,2011, US DLA (Defense Logistics Agency)

- Applicable Spec : MIL-PRF-38535 & MIL-STD-883

- Certified Fab Process : 0.18um Mixed Signal

& 0.35um BCD Process

7 / 16

Automotive Market Product Areas

8 / 16

Automotive Production Performance

Proven Track Record of Driving DPPM

Levels Down Over Time

Based on Data from Multiple Tier-1

Automotive Customers

US & Japan Regions

DPPM Focus During Development,

then into Production

• The data is provided by the DBH’s major customer.

• The DBH’s major customer provides this data to DBH

through the Quarterly Quality Review Meeting.

0

2

4

6

8

10

12

14

2005 2006 2007 2008 2009 2010 2011 2012

DPPM Trend (Tier-1)

9 / 16

Automotive IP from Ecosystem Partners

The Analog POWERHouse™ Connection

World Class Technologies for

Analog and Power

Automotive Programs for Robust

Solutions

500+ Years Experience ISO 9001 Certified

LIN Transceiver • Compatible to LIN Spec Rev 2.1

• Operating voltage up to 27V

• Slew control for good EMI behavior

• LIN Bus pin DC range -40V to +40V

• Fully integrated input receiver filter

• Integrated power FET protection clamps on both gate and drain terminals

• Gate pre-drive control input is CMOS compatible, high impedance port with hysteresis

• Gate pre-drive monitors for On-state shorted-load and Off-state open-load fault protection

Low-Side FET Pre-driver

10 / 16

Rigorous Process Qualification Criteria

Automotive Process Qualification

Quick WLR PLR

• Accelerated Lifetime Stress

- EFR, HTOL, THB

• Accelerated Environment

Stress

- HTS, LTS, PCT, TC

• Electrical Verification

- ESD, Latch-up

Intrinsic Component Level Reliability

Quick validation of devices during process development

• MOS HCI Reliability

• Interconnect Reliability

• Resistor Reliability

• Bipolar Reliability

• Diode Integrity

• Dielectric Integrity

• PMOS BTI

• IMD Integrity

• Transistor Reliability

- HCI @ NMOS

- BTI @ PMOS

- HE-SOA @ NLDMOS

& DENMOS

- Thermal SOA

- HTRB @ N/P LDMOS

& N/P DEMOS

• Gate Oxide Integrity @ N/PMOS

• EM @ Contact/Via, Metal

Test Vehicle Reliability for Process Development

Full WLR

• Quick WLR: quick wafer level reliability • Full WLR: component base reliability (wafer level / package level) • PLR: product level reliability (package level reliability )

11 / 16

Extensive WLR Characterization

Weibull plot for TDDB

TTF plot for TDDB

HCI Lifetime HCI

Characterization

1 10 100 1000

1

10

40

70

95

99.5

99.999

Via fed lead_Metal 1 (width=0.4um)

Via fed lead_Metal 2 (width=0.4um)

Via fed lead_Metal 3 (width=0.4um)

Via fed lead_Metal 1 (width=3.0um)

Via fed lead_Metal 2 (width=3.0um)

Via fed lead_Metal 3 (width=3.1um)

Cu

m.

Fa

ilu

re (

%)

Design Dependency ( Hrs )

EM Characterization

exp( * ) * exp( )Ea

TTF A γ EkT

12 / 16

Closed-Loop Continuous Improvement Plan

In-line Defect

SPC

PCM (WAT)

Yield

Incoming

Reliability

Monitoring Failure

Event Data analysis

Root

cause

verification

Corrective

action

8D report

1 page report

Control plan FMEA

CIP

Periodic CpK review

DM sampling

RPN prioritization

SEV, OCC, DET

8D approach

EFA, PFA

Abnormal

Quality issue

PCM (WAT) scrap

Low yield

Field return

Audit

Readiness

RPN* = Risk Priority Number SEV* = Severity , OCC* = Occurrence, DET* = Detection EFA* = Electrical Failure Analysis, PFA* = Physical FA

13 / 16

DBH Automotive Audit Success

Tier-1 Supplier Audit

Audit Results:

1) Grade: A

2) Rating: “Strategic Component Supplier”

Audit Comments:

1) Very Clean Fab

2) Very Well Disciplined

3) Preparation for Our Audit Was Evident

4) Training Program Looks Excellent

5) Dongbu Has Been Very Cooperative

6) Excellent Job Responding to Open Items

14 / 16

AEC-Q100 Qualification Requirements

Group A

Accelerated Environment Stress Tests

PC, THB, TC, HTSL

Group B

Life Tests

HTOL, ELFR, NVM

Group C

Package Assembly Integrity Tests

Bond Shear, Bond Pull, Solderability,

Solder Ball Shear, Lead Integrity

Group E

Electrical Verification Tests

Pre/Post Stress Test, ESD,

Latchup, Characterization

Group D

Die Fabrication Reliability Tests

EM, TDDB, HCI, NBTI, SM

Definitions:

PC = Pre-Conditioning

THB = Temperature Humidity Bias

TC = Temperature Cycling

HTSL = High Temperature Storage Life

HTOL = High Temperature Operating Life

ELFR = Early Life Failure Rate

NVM = Non-Volatile Memory (Endurance, Data Retention)

EM = Electro-Migration

TDDB = Time Dependent Dielectric Breakdown

HCI = Hot Carrier Injection

NBTI = Negative Bias Temperature Instability

SM = Stress Migration

Product Qualification Process Qualification

Group D Tests Are Fully

Supported by DBH

15 / 16

15 years data retention

Document Period

Contract review document and record Indefinitely

Qualification document Indefinitely

Customer specification Indefinitely

Inspection and test data Min. 15 years

Product identification and traceability Min. 15 years

Lot history records Min. 15 years

Incoming inspection record Min. 15 years

Shipping report Min. 15 years

Internal audit recall and corrective action record Min. 15 years

Record retention

16 / 16

Thank you