device description aida-2020 run 11748 filevidyo cern. 29-10-2018 centro nacional del...

Vidyo CERN. 29-10-2018

Centro Nacional del Microelectrónica Instituto de Microelectrónica de Barcelona

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IMB-CNM Activities for ATLAS & CMS Timing Layers

Device Description AIDA-2020 Run 11748

M. Carulla, A. Doblas, D. Flores, S. Hidalgo,

A. Merlos, G. Pellegrini, D. Quirion, I. VilaCentro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona, Spain

Instituto de Física de Cantabria, IFCA-UC-CSIC, Santander, Spain



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4’’ Thin LGAD 4 AIDA2020 (35-50 µm thick Si-Si)

o Run 11748. AIDA2020 14 Si-Si 4” wafers (35-50 µm

High-Res) 9 Mask Levels (CNM913) JTE all structures (5, 10, 15 µm

width) 37, 47, 57 µm Inter-Pad Gap Boron multiplication layer 100 Fabrication Steps An open window in the top metal

layer for Laser characterization (100x100 µm2)

Temporary metal layer for matrix devices electrical characterization (shorting all pixels)



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LGAD 4 AIDA2020. Fabrication Processes Status

o LGADs for ATLAS and CMS Timing Layers. AIDA2020. Run 11748 We use three different implantation dose values for the

multiplication area (2,3,8,9 low; 4,5,10,11 medium; 6,7,13,14 high)

Wafers 3,5,7 are 35 µm thick. Wafers 9,11,14 are 50 µm thick Wafers 3,5,7,9,11,14 do not use temporary metal and they will

be tested on-wafer using some single pad devices to evaluate the fabrication process quality

We will only use temporary metal on wafers 1,2,4,6,8,10,12,13 All wafers will be provided diced We are using the same mask set (CNM913) for 6 Dummy

Wafers. This fabrication process (Run 12119) uses 6 wafers with metal layer only



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4’’ Thin LGAD 4 AIDA2020 (Run 11748)

ALTIROC0 2x2 matrix for first version of readout chip ALTIROC1 5x5 matrix SINGLE DIODE PAD (1x1 and 1.3x1.3 mm2) UBM opening for bumps

Passivation opening of 90 μm Large opening for wire-bond + probe

200 x 100 μm2

An open window in the top metal layer for Laser characterization 100 x 100 μm2

33 µm

JTE

33 µm 300 µm1.0 x 1.0 mm²1.3 x 1.3 mm²



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Wafers Diced 3, 5, 7, 9, 11, 14 35 µm 3, 5, 7 Low 3, 9

50 µm 9, 11, 14 Med 5, 11

High 7, 14

Devices/Wafer

Inter-Pad Gap ATLAS 5X5 ATLAS 2X2 1.3 ATLAS 2X2 1.0 LGAD 1.3 LGAD 1.0 PiN 1.3 PiN 1.0

X_37 6 16 9 10 18 2 2

X_47 8 18 9 14 16 4 3

X_57 8 18 8 16 18 2 3

Total 22 52 26 40 52 8 8

Diced 11 26 14 40 52 8 8

UBM 11 26 12

Samples Delivered

Laboratory Device Type W5 W11

IFCA

LGAD 1.0 26 26

LGAD 1.3 9 9

PiN 1.0 7 8

PiN 1.3 6 6

IFAE

ATLAS 2x2 1.3 5

X_37 3

X_47 2

LGAD 1.3 3 3

Joern (from IFCA)LGAD 1.3 9 9

PiN 1.3 2 2

6 Wafers Diced: 3, 5, 7, 9, 11, 14 3 Wafers 35 µm thick: 3, 5, 7 3 Wafers 50 µm thick: 9, 11, 14 3 Gain Layer Implantation Doses: Low,

Med, High 3 Inter-Pad Gaps: 37, 47, 57 µm ATLAS Modules: 50 % Diced, 50 % UBM Some samples delivered to IFAE, IFCA

and Joern (from IFCA)




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Preliminary Results

Wafer Dose Thickhness (µm)

3,9 Low 35,50

5,11 Medium 35,50

7,14 High 35,50

1,75 1,80 1,85 1,90100

120

140

160

180

200

220

240

260

280

DA33_35um

DA33_50um

DB31_35um

DB31_50um

Bre

akd

ow

n v

olt

ag

e (

V)

Pwell Dose (x1012 cm-2)

Run11748 Lgad 4" AIDA2020

W3

W5

W7

W9

W11

W14

Low Medium High




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device description aida-2020 run 11748 filevidyo cern. 29-10-2018 centro nacional del...

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