ikw15t120 rev2 4g new - farnell element14 · 2017. 3. 15. · ikw15t120 trenchstop® series ifag...
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IKW15T120TrenchStop® Series
IFAG IPC TD VLS 1 Rev. 2.4 12.06.2013
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diode
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10s Designed for :
- Frequency Converters- Uninterrupted Power Supply
TrenchStop®
and Fieldstop technology for 1200 V applicationsoffers :
- very tight parameter distribution- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due topositive temperature coefficient in VCE(sat)
Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC
1for target applications
Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package
IKW15T120 1200V 15A 1.7V 150C K15T120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VC E 1200 V
DC collector currentTC = 25CTC = 100C
IC
3015
A
Pulsed collector current, tp limited by Tjmax IC p u l s 45
Turn off safe operating area
VCE 1200V, Tj 150C
- 45
Diode forward current
TC = 25C
TC = 100C
IF
30
15
Diode pulsed current, tp limited by Tjmax IF p u l s 45
Gate-emitter voltage VG E 20 V
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
tS C 10 s
Power dissipation
TC = 25C
P t o t 110 W
Operating junction temperature T j -40...+150 C
Storage temperature T s t g -55...+150
1J-STD-020 and JESD-022
2)Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 2 Rev. 2.4 12.06.2013
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R t h J C 1.1 K/W
Diode thermal resistance,
junction – case
R t h J C D 1.5
Thermal resistance,
junction – ambient
R t h J A 40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Symbol ConditionsValue
Unitmin. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.5mA 1200 - - V
Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=15A
T j=25C
T j=125C
T j=150C
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage VF VG E=0V, IF=15A
T j=25C
T j=125C
T j=150C
-
-
-
1.7
1.7
1.7
2.2
-
-
Gate-emitter threshold voltage VG E ( t h ) IC=0.6mA,VC E=VG E 5.0 5.8 6.5
Zero gate voltage collector current IC E S VC E=1200V ,
VG E=0V
T j=25C
T j=150C
-
-
-
-
0.2
2.0
mA
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA
Transconductance g f s VC E=20V, IC=15A - 10 - S
Integrated gate resistor RG i n t none Ω
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 3 Rev. 2.4 12.06.2013
Dynamic Characteristic
Input capacitance C i s s VC E=25V,
VG E=0V,
f=1MHz
- 1100 - pF
Output capacitance Co s s - 100 -
Reverse transfer capacitance C r s s - 50 -
Gate charge QG a t e VC C=960V, IC=15A
VG E=15V
- 85 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC ( S C ) VG E=15V, tS C10s
VC C = 600V,T j = 25C
- 90 - A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=25C,VC C=600V, IC=15A,VG E=0/15V,RG=56 ,L
2 )=180nH,
C2 )
=39pFEnergy losses include“tail” and diodereverse recovery.
- 50 - ns
Rise time t r - 30 -
Turn-off delay time td ( o f f ) - 520 -
Fall time t f - 60 -
Turn-on energy Eo n - 1.3 - mJ
Turn-off energy Eo f f - 1.4 -
Total switching energy E t s - 2.7 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=25C,
VR=600V, IF=15A,
diF /d t=600A/s
- 140 - ns
Diode reverse recovery charge Q r r - 1.9 - µC
Diode peak reverse recovery current I r r m - 17 - A
Diode peak rate of fall of reverserecovery current during tb
di r r /d t - 230 - A/s
1)Allowed number of short circuits: <1000; time between short circuits: >1s.
2)Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 4 Rev. 2.4 12.06.2013
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter Symbol ConditionsValue
Unitmin. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=150C,VC C=600V, IC=15A,VG E=0/15V,RG= 56L
1 )=180nH,
C1 )
=39pFEnergy losses include“tail” and diodereverse recovery.
- 50 - ns
Rise time t r - 35 -
Turn-off delay time td ( o f f ) - 600 -
Fall time t f - 120 -
Turn-on energy Eo n - 2.0 - mJ
Turn-off energy Eo f f - 2.1 -
Total switching energy E t s - 4.1 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=150C
VR=600V, IF=15A,
diF /d t=600A/s
- 330 - ns
Diode reverse recovery charge Q r r - 3.4 - µC
Diode peak reverse recovery current I r r m - 21 - A
Diode peak rate of fall of reverserecovery current during tb
di r r /d t - 190 - A/s
1)Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 5 Rev. 2.4 12.06.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
10Hz 100Hz 1kHz 10kHz 100kHz0A
10A
20A
30A
40A
TC=110°C
TC=80°C
I C,
CO
LLE
CT
OR
CU
RR
EN
T
1V 10V 100V 1000V
0,1A
1A
10A
DC
10µs
tp=2µs
50µs
500µs
20ms
150µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency(Tj 150C, D = 0.5, VCE = 600V,VGE = 0/+15V, RG = 56)
Figure 2. Safe operating area(D = 0, TC = 25C,Tj 150C;VGE=15V)
Pto
t,P
OW
ER
DIS
SIP
AT
ION
25°C 50°C 75°C 100°C 125°C0W
20W
40W
60W
80W
100W
I C,
CO
LLE
CT
OR
CU
RR
EN
T
25°C 75°C 125°C0A
10A
20A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function ofcase temperature(Tj 150C)
Figure 4. Collector current as a function ofcase temperature(VGE 15V, Tj 150C)
Ic
Ic
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 6 Rev. 2.4 12.06.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V 4V 5V 6V
0A
10A
20A
30A
40A
15V
7V
9V
11V
13V
VGE
=17V
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V 4V 5V 6V
0A
10A
20A
30A
40A
15V
7V
9V
11V
13V
VGE
=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic(Tj = 25°C)
Figure 6. Typical output characteristic(Tj = 150°C)
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 2V 4V 6V 8V 10V 12V0A
5A
10A
15A
20A
25A
30A
35A
40A
25°C
TJ=150°C
VC
E(s
at)
,C
OLLE
CT
OR
-EM
ITT
SA
TU
RA
TIO
NV
OLT
AG
E
-50°C 0°C 50°C 100°C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=15A
IC=30A
IC=8A
IC=5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic(VCE=20V)
Figure 8. Typical collector-emittersaturation voltage as a function ofjunction temperature(VGE = 15V)
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 7 Rev. 2.4 12.06.2013
t,S
WIT
CH
ING
TIM
ES
0A 10A 20A1ns
10ns
100ns
tr
td(on)
tf
td(off)
t,S
WIT
CH
ING
TIM
ES
1ns
10ns
100ns
1µs
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=56Ω, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=15A,Dynamic test circuit in Figure E)
t,S
WIT
CH
ING
TIM
ES
0°C 50°C 100°C 150°C10ns
100ns
tr
tf
td(on)
td(off)
VG
E(t
h),
GA
TE-E
MIT
TT
RS
HO
LD
VO
LT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE=600V,VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 0.6mA)
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 8 Rev. 2.4 12.06.2013
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
5A 10A 15A 20A 25A0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
Ets*
Eoff
*) Eon
and Etsinclude losses
due to diode recovery
Eon
*E
,S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
0 mJ
1 mJ
2 mJ
3 mJ
4 mJ
5 mJE
ts*
Eon
*
*) Eon
and Ets
include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy lossesas a function of collector current(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, RG=56Ω, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ=150°C,VCE=600V, VGE=0/15V, IC=15A,Dynamic test circuit in Figure E)
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
50°C 100°C 150°C0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon
*
*) Eon
and Ets
include losses
due to diode recovery
Eoff
E,
SW
ITC
HIN
GE
NE
RG
YLO
SS
ES
400V 500V 600V 700V 800V0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
Ets*
Eon
*
*) Eon
and Ets
include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load, VCE=600V,VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ=150°C,VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E)
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 9 Rev. 2.4 12.06.2013
VG
E,
GA
TE-E
MIT
TE
RV
OLT
AG
E
0nC 50nC 100nC0V
5V
10V
15V
960V240V
c,
CA
PA
CIT
AN
CE
0V 10V 20V10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge(IC=15 A)
Figure 18. Typical capacitance as a functionof collector-emitter voltage(VGE=0V, f = 1 MHz)
t SC,
SH
OR
TC
IRC
UIT
WIT
HS
TA
ND
TIM
E
12V 14V 16V0µs
5µs
10µs
15µs
I C(s
c),short
circu
itC
OLLE
CT
OR
CU
RR
EN
T
12V 14V 16V 18V0A
25A
50A
75A
100A
125A
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as afunction of gate-emitter voltage(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collectorcurrent as a function of gate-emitter voltage(VCE 600V, Tj 150C)
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 10 Rev. 2.4 12.06.2013
VC
E,
CO
LLE
CT
OR
-EM
ITT
ER
VO
LT
AG
E
0V
200V
400V
600V
0A
10A
20A
30A
1.5us1us0.5us0us
IC
VCE
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V
200V
400V
600V
0A
10A
20A
30A
1.5us1us0.5us0us
IC
VCE
t, TIME t, TIME
Figure 21. Typical turn on behavior(VGE=0/15V, RG=56Ω, Tj = 150C,Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior(VGE=15/0V, RG=56Ω, Tj = 150C,Dynamic test circuit in Figure E)
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
LR
ES
IST
AN
CE
10µs 100µs 1ms 10ms 100ms10
-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
LR
ES
IST
AN
CE
10µs 100µs 1ms 10ms 100ms10
-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance(D = tp / T)
Figure 24. Diode transient thermalimpedance as a function of pulsewidth(D=tP/T)
R , ( K / W ) , ( s ) 0.121 1.73*10-1
0.372 2.75*10-2
0.381 2.57*10-3
0.226 2.71*10-4
C 1=1 /R 1
R 1 R2
C 2=2 /R 2
R , ( K / W ) , ( s ) 0.360 7.30*10-2
0.477 8.13*10-3
0.434 1.09*10-3
0.224 1.55*10-4
C1=1 /R1
R1 R 2
C2=2 /R 2
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 11 Rev. 2.4 12.06.2013
t rr,
RE
VE
RS
ER
EC
OV
ER
YT
IME
200A/µs 400A/µs 600A/µs 800A/µs0ns
100ns
200ns
300ns
400ns
500ns
600ns
TJ=25°C
TJ=150°C
Qrr,
RE
VE
RS
ER
EC
OV
ER
YC
HA
RG
E
200A/µs 400A/µs 600A/µs 800A/µs0µC
1µC
2µC
3µC
TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time asa function of diode current slope(VR=600V, IF=15A,Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR=600V, IF=15A,Dynamic test circuit in Figure E)
I rr,
RE
VE
RS
ER
EC
OV
ER
YC
UR
RE
NT
200A/µs 400A/µs 600A/µs 800A/µs0A
5A
10A
15A
20A
25A
30A
TJ=25°C
TJ=150°C
di rr
/dt,
DIO
DE
PE
AK
RA
TE
OF
FA
LL
OF
RE
VE
RS
ER
EC
OV
ER
YC
UR
RE
NT
200A/µs 400A/µs 600A/µs 800A/µs-0A/µs
-100A/µs
-200A/µs
-300A/µs
TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery currentas a function of diode currentslope(VR=600V, IF=15A,Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=600V, IF=15A,Dynamic test circuit in Figure E)
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 12 Rev. 2.4 12.06.2013
I F,
FO
RW
AR
DC
UR
RE
NT
0V 1V 2V0A
10A
20A
30A
40A
150°C
TJ=25°C
VF,
FO
RW
AR
DV
OLT
AG
E
-50°C 0°C 50°C 100°C0,0V
0,5V
1,0V
1,5V
2,0V
15A
8A
IF=30A
5A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current asa function of forward voltage
Figure 28. Typical diode forward voltage as afunction of junction temperature
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 13 Rev. 2.4 12.06.2013
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 14 Rev. 2.4 12.06.2013
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS
QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+
t =t tr r S F
+
Figure C. Definition of diodesswitching characteristics
p(t)1 2 n
T (t)j
11
2
2
n
n
TC
r r
r
r
rr
Figure D. Thermal equivalentcircuit
Figure E. Dynamic test circuitLeakage inductance L =180nHand Stray capacity C =39pF.
Figure A. Definition of switching times
Figure B. Definition of switching losses
IKW15T120TrenchStop® Series
IFAG IPC TD VLS 15 Rev. 2.4 12.06.2013
Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.
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