IXYSPOWEREfficiency Through Technology

Introducing P-Channel Power MOSFETsnext generation p-channel power mosfets -50v to -600v

IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction

of two advanced new families; TrenchPTM and PolarPTM. These families take

advantage of proven technology strategies which have helped to make the IXYS

device portfolio the most efficient in the industry.

The TrenchPTM P-Channel Power MOSFET family targets low voltage applications

requiring drain to source breakdown voltages from -50V to -150V with drain current

ratings of -18 amperes to -140 amperes. This P-Channel family (manufactured

using the advanced IXYS Trench2TM process) features an ultra low Rdson, thus

minimizing conduction losses and promoting improved operating and thermal

efficiencies.

The PolarPTM P-Channel Power MOSFET family targets applications requiring

much larger drain to source breakdown voltages starting from -100V to -600V

with drain current ratings of -10 amperes to -170 amperes. This P-Channel family

(manufactured using the advanced IXYS PolarTM process) has been especially

tailored to minimize on-state resistance and gate charge.

These new TrenchPTM and PolarPTM P-Channel Power MOSFETs represent the

most efficient and rugged discrete P-Channel solutions available for applications

from -50V to -600V.

septemBer 2008

n e w p r o D U c t B r i e f

overview

visit us at www.ixys.com

for more information, contact product support at (408) 457-9004 PBTRENCHPOLARP 1.3September 2008

PolarPTM P-Channel Power MOSFETsnew polar generation p-channel mosfets -100v to -600v

IXYS’ PolarP™ P-Channel Power MOSFETs are designed to bring a more cost-effective

solution to ‘high side’ switching applications where a simple drive circuit referenced to

ground can be employed, circumventing additional ‘high side’ driver circuitry commonly

involved when using a N-Channel MOSFET. This results in a reduction in component count,

promoting cost savings and circuit simplification in low to medium power applications.

These PolarP™ P-Channel MOSFETS are fabricated using IXYS’ Polar technology platform,

which significantly reduces the on-state resistance (Rdson) by 30% and gate charge (Qg)

by 40% in comparison to legacy counterparts, resulting in lower conduction loss and

providing excellent switching performance. They are dynamic dV/dt and avalanche rated

making them extremely rugged in demanding operating environments and can easily be

paralleled due to an on-state resistance with positive temperature coefficient.

IXYS’ PolarP™ P-Channel Power MOSFETs are ideal in a variety of applications, with best-

in-class performance and competitive pricing. Applications include push-pull amplifiers,

buck converters, DC choppers, power solid state relays, CMOS high power amplifiers,

high current regulators, and high side switching in automotive and test equipment. The

superior ruggedness of the PolarPTM Power MOSFETs also makes them suitable devices for

motor control and power cut-off switches or power SSRs for energy saving applications.

To facilitate optimum part selection, IXYS offers voltage ratings for these devices at -100V,

-150V, -200V, -500V and -600V with drain currents ranging from -10A to -170A. They are

offered in various standard discrete packages such as the TO-247, TO-3P, TO-220, TO-268, TO-

264, TO-263, and SOT-227. In addition, IXYS proprietary ISOPLUS™ packages will be offered

providing UL recognized 2500V electrical junction-to-case isolation with superior thermal

performance while maintaining the same footprint of an un-isolated standard package.

overview

featUresFast intrinsic diode• Dynamic dv/dt rated• Avalanche Rated• Rugged PolarP• TM processlow gate charge and rds(on) • characterizationlow package inductance•

BEnEFITSlow gate charge results in simple • drive requirementimproved gate, avalanche and • dynamic dv/dt ruggednesshigh power density• Fast switching• easy to parallel•

applicationshigh side switching• push-pull amplifiers• Dc-Dc and Dc-ac converters• Current regulators• automatic test equipment• Battery charger applications•

www.ixys.com

PolarPTM p-channel power mosfet application circuits

PolarPTM p-channel power mosfet competitive analysis

IXYS IXTA52P10P yielded the lowest Thermal Resistance (RthJC), On-Resistance

(Rdson), Gate Charge (Qg), and Reverse Recovery Time (Trr) in comparison to

competitor device offerings. We observed as low as a 48.5% decrease in (RthJC),

16.7% decrease in (Rdson), 29% decrease in (Qg), and a 25% decrease in (Trr).

Competitive analysis was completed with each device rated with the following

parameters: Vdss = -100V, Id = -30A, & TO-263 (D2-Pak) housing package.

IXYS IXTA52P10P yielded the highest Repetitive Avalanche Energy rating

(Eas) and Maximum Power Dissipation (Pd) in comparison to other major

competitor device offerings. We observed as high as a 69% increase in

(Ear) and a 48% increase in (Pd) compared to competitor device offerings.

Competitive analysis was completed with each device rated with the following

parameters: Vdss = -100V, Id = -30A, & TO-263 (D2-Pak) housing package.

0

20

40

60

80

100

120

140

160

Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)

RthJC (C⁰/W) (max)

60

120

5 0.5

85

160

6 0.97

IXYS - IXTA52P10P Fairchild - FQB34P10

0

50

100

150

200

250

300

Pd (W) Tc=25°C (max) Ear(mJ)(max)

300

50

155

15.5

200

20

IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L

0

20

40

60

80

100

120

140

160

Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)

RthJC (C⁰/W) (max)

60

120

5 0.5

85

160

6 0.97

IXYS - IXTA52P10P Fairchild - FQB34P10

0

50

100

150

200

250

300

Pd (W) Tc=25°C (max) Ear(mJ)(max)

300

50

155

15.5

200

20

IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L

0

20

40

60

80

100

120

140

160

Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)

RthJC (C⁰/W) (max)

60

120

5 0.5

85

160

6 0.97

IXYS - IXTA52P10P Fairchild - FQB34P10

0

50

100

150

200

250

300

Pd (W) Tc=25°C (max) Ear(mJ)(max)

300

50

155

15.5

200

20

IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L

0

20

40

60

80

100

120

140

160

Qg (nC) (typ) Trr (nS) (typ) Rds(on) mΩ (max)

RthJC (C⁰/W) (max)

60

120

5 0.5

85

160

6 0.97

IXYS - IXTA52P10P Fairchild - FQB34P10

0

50

100

150

200

250

300

Pd (W) Tc=25°C (max) Ear(mJ)(max)

300

50

155

15.5

200

20

IXYS - IXTA52P10P Fairchild - FQB34P10 IR - IRF5210S/L

P-Channel Power MOSFET used

as a positive supply switch

P-Channel Power MOSFET

used as high-side switchP-Channel MOSFETs used in

battery protection circuit

TrenchPTM P-Channel Power MOSFETsnew trench p-channel power mosfets -50v to -150v

IXYS expands its P-Channel product portfolio with the introduction of the TrenchPTM

P-Channel Power MOSFET family. This new family of P-Channel devices capitalize on

benefits derived from IXYS’ advanced trench cell technology to achieve remarkably low

on-state resistance (Rdson) values per silicon area. This benefit, combined with low gate

charge and intrinsic gate resistance provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications. Additional features include an

extended forward bias operating area (FBSOA) and excellent avalanche capabilities.

TrenchPTM P-Channel MOSFETs are well suited for ‘high side’ switching applications

where a simple drive circuit referenced to ground can be employed, avoiding additional

‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This

enables designers to reduce component count, thereby improving drive circuit simplicity

and over-all component cost structure. Furthermore, it allows for the design of a

complementary power output stage with a corresponding IXYS N-Channel MOSFET, for a

power half bridge stage paired with a simple drive circuit.

These products are available to support applications requiring voltage ratings from -50V

to -150V and current ratings from -18A to -140A. Package options include the TO-220, TO-

247, TO-3P and surface mount TO-263 housing. Common applications that will benefit

from these devices include high side or load switching, DC/DC converters, high current

regulators, DC choppers, CMOS high power amplifiers, push-pull amplifiers, battery

chargers, and power solid state relays.

overview

featUresinternational standard packages Fast intrinsic diode Avalanche Rated low Qg and rds(on) Extended FBSOA

applicationsload switches high side switches low voltage applications (automotive, Dc/Dc converters)high efficiency switching power supplies for portable and battery operated systemsinverters and battery chargers

BEnEFITSlow gate charge resulting in simple drive requirementhigh power density Fast Switching

www.ixys.com

TrenchPTM p-channel power mosfet application circuits

TrenchPTM p-channel power mosfet competitive analysis

1

Application Examples:

Fig. 2: P-channel gate driving example for PWM application

Fig. 2 shows one example of gate driving circuit for high side P-channel power MOSFET. This is much simpler and more cost effective than the driving circuits in Figure 5 and 7 for N-channel MOSFET. In the circuit, Dz, Rz, and Ch were added to the typical gate driving circuit for an N-channel power MOSFET. The capacitor “Ch”, which holds DC voltage between the higher and lower gate drive circuits, must be much larger than the input capacitance of the P-channel MOSFET. Dz keeps the gate to source voltage in the range of –Zener voltage to 0.

The product of Ch and Rz determines the speed of the DC voltage adjustment across Ch. If it’s too small, there will be a large current, which can damage the gate drive IC or Dz. If it’s too big, the P-channel MOSFET will operate in the linear mode for a prolonged period of time. This is due to the slower rise time of the gate pulse amplitude and can damage the MOSFET. Rh2 and Rl2 are resistors for controlling MOSFET turn off speed. (Rh1 + Rh2) and (Rl1 + Rl2) are resistors for controlling MOSFET turn on speed. In most cases, slower turn on speed is desirable.

2

Figure 6 shows an isolated gate driver circuit driving both N-channel and P-channel MOSFET with a single pulse transformer. The N-channel MOSFET is used as a high side switch, while the P-channel MOSFET is the low side switch. They are connected in a source to source configuration. This circuit provides dead time by the time constant difference of charging and discharging the gate input capacitance.

Figure 6: Single pulse transformer diving both N-channel and P-channel MOSFET

As pulse transformers are bulky and not so reliable; many application circuits use expensive photo or current source coupled gate drive ICs. The simplest method for supplying power to the IC is using the bootstrap technique, shown in Figure 7. While Ml is turned on and the source voltage of Mh is near zero, the dc link capacitor Cb is charged by Db and Rb. In case of the ground voltage of the upper gate drive IC goes below its reference ground, the IC can make failure. To reduce this possibility, the gate resistors are located at the source side of Mh.

3

Figure 8: Low frequency N-channel MOSFET Driving with charge pump

Commonly used in car applications, almost all loads are connected between switches and body ground. The switches connect the +12 V supply to the grounded loads. So, when the car taking rest, the both ends of the load are in car body ground. If any load is connected directly to the +12 V supply, it will collect negative ions and it will easily get rusty or become dirty. Also, there is a chance that some careless repairman will short the high potential load to ground, which will cause sparks. Therefore, almost all the switches in automotive applications are located at the positive side. To drive the positive side n-channel MOSFET at a very low frequency, pulse transformer or bootstrap techniques can not be used. Figure 8 shows the circuit for providing a gate voltage higher than the DC-link voltage. When the square wave generator output is at ground, the diode Dc charges the charge pump capacitor Cp. When the square wave generator output is at the positive DC-link voltage, diode Dd discharges Cp. The charge is transferred to Cd, which is the power source of the high side gate drive circuit.

LoadIn

Mh

Rh1

Rh2

RiQi

Dz

Figure 9: Low frequency P-channel MOSFET driving circuit

As shown in Figure 9, P-channel MOSFET greatly simplifies the overall circuit of Figure 8. Generally, the simpler circuit is more reliable. Although the P-channel MOSFET has higher A*Rds(on) than that of the N-channel MOSFET, in many cases, this simple circuit makes the larger expensive P-channel MOSFET the most cost effective solution.

Audio Amplifier: Maybe, audio amplifier is the most important application of P-channel MOSFET. As the mobility of carrier becomes lower at higher temperature, some heated part in MOSFET chip pushes out current to the remaining part of the chip. So, the current density is automatically well distributed over the whole area of chip. In the other hand, the heated part of BJT (Bipolar Junction Transistor) attracts more current density. So, current density concentrates in heated part and increases temperature more. This positive feed back makes BJT go into ‘second mode breakdown’. To avoid this, ‘emitter ballast resistance’ can be used in BJT. But, it makes an additional power loss.

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

0

10

20

30

40

50

60

70

80

Rds(on) (max) mOhms

Trr (typ) nS

36

26

60

71

IXYS - IXTP32P05T IR - IRF5305

0

20

40

60

80

100

120

140

160

180

Qg (typ) nC Rds(on) (max) mOhm

Trr (typ) nS

46 4531

54

80

175

IXYS - IXTA28P065T ON - MTB30P06V

0

20

40

60

80

100

120

140

Rds(on) (max) mOhms

Trr (typ) nS

120

62

140

120

IXYS - IXTP18P10T Fairchild - FQP17P10

Single pulse transformer driving both

N-Channel and P-Channel MOSFET

Low Frequency P-Channel

MOSFET Drive Circuit

P-Channel Gate Driving Example

for PWM applications

IXYS IXTP18P10T yielded the lowest on-state resistance Rds(on) and reverse recovery time (trr) in comparison to

other major competitor devices. We observed as low as a 15% decrease in Rds(on) and 48% decrease in trr.

Competitive analysis was completed with each device rated with the following parameters: Vdss=100V, Id=18A,

& TO-220 housing package.

IXYS IXTP32P05T yielded the lowest on-state resistance Rds(on) and reverse recovery time (trr) in comparison to

other major competitor devices. We observed as low as a 40% decrease in Rds(on) and 63% decrease in trr.

Competitive analysis was completed with each device rated with the following parameters: Vdss=50V, Id=32A, &

TO-220 housing package.

IXYS IXTA28P065T yielded the lowest on-state resistance Rds(on), gate charge (Qg) and reverse recovery

time (trr) in comparison to other major competitor devices. We observed as low as a 44% decrease in

Rds(on), 15% decrease in Qg, and 82% decrease in trr.

Competitive analysis was completed with each device rated with the following parameters: Vdss=65V,

Id=28A, & TO-263 housing package.

PolarPTM and TrenchPTM summary table

part number vdss (max) vid @ tc=25°c

(a)rds(on) @ tc=25°c (Ω)

ciss (pf) typ

Qg (nc) typ

trr @ tc= 25°c (ns)

r(th)Jc (°c/w) pd (w) package

TrenchP P-Channel Power MOSFETsIXTA32P05T -50 -32 0.036 1975 46 26 1.5 83 TO-263IXTP32P05T -50 -32 0.036 1975 46 26 1.5 83 TO-220

IXTA140P05T -50 -140 0.008 13500 200 53 0.42 298 TO-263IXTP140P05T -50 -140 0.008 13500 200 53 0.42 298 TO-220IXTH140P05T -50 -140 0.008 13500 200 53 0.42 298 TO-247IXTA28P065T -65 -28 0.045 2030 46 31 1.5 83 TO-263IXTP28P065T -65 -28 0.045 2030 46 31 1.5 83 TO-220

IXTA120P065T -65 -120 0.01 13200 185 53 0.42 298 TO-263IXTP120P065T -65 -120 0.01 13200 185 53 0.42 298 TO-220IXTH120P065T -65 -120 0.01 13200 185 53 0.42 298 TO-247IXTA24P085T -85 -24 0.065 2090 41 40 1.5 83 TO-263IXTP24P085T -85 -24 0.065 2090 41 40 1.5 83 TO-220IXTA96P085T -85 -96 0.013 13100 180 55 0.42 298 TO-263IXTP96P085T -85 -96 0.013 13100 180 55 0.42 298 TO-220IXTH96P085T -85 -96 0.013 13100 180 55 0.42 298 TO-247IXTA18P10T -100 -18 0.12 2100 39 62 1.5 83 TO-263IXTP18P10T -100 -18 0.12 2100 39 62 1.5 83 TO-220IXTA76P10T -100 -76 0.024 13700 197 70 0.42 298 TO-263IXTP76P10T -100 -76 0.024 13700 197 70 0.42 298 TO-220IXTH76P10T -100 -76 0.024 13700 197 70 0.42 298 TO-247IXTA44P15T -150 -44 0.065 13400 175 140 0.42 298 TO-263IXTP44P15T -150 -44 0.065 13400 175 140 0.42 298 TO-220IXTH44P15T -150 -44 0.065 13400 175 140 0.42 298 TO-247IXTQ44P15T -150 -44 0.065 13400 175 140 0.42 298 TO-3P

PolarP P-Channel Power MOSFETsIXTA52P10P -100 -52 0.05 2845 60 120 0.42 300 TO-263IXTH52P10P -100 -52 0.05 2845 60 120 0.42 300 TO-247IXTP52P10P -100 -52 0.05 2845 60 120 0.42 300 TO-220IXTQ52P10P -100 -52 0.05 2845 60 120 0.42 300 TO-3PIXTR90P10P -100 -57 0.27 5800 120 144 0.66 190 ISOPLUS247IXTH90P10P -100 -90 0.25 5800 120 144 0.27 462 TO-247IXTT90P10P -100 -90 0.25 5800 120 144 0.27 462 TO-268

IXTR170P10P -100 -108 0.013 12600 240 176 0.4 312 ISOPLUS247IXTK170P10P -100 -170 0.012 12600 240 176 0.14 890 TO-264IXTX170P10P -100 -170 0.012 12600 240 176 0.14 890 PLUS247IXTN170P10P -100 -170 0.012 12600 240 176 0.14 890 SOT-227IXTC36P15P -150 -22 0.12 2950 55 150 1 150 ISOPLUS220IXTR36P15P -150 -22 0.12 2950 55 150 1 150 ISOPLUS247IXTA36P15P -150 -36 0.11 3100 55 228 0.42 300 TO-263IXTP36P15P -150 -36 0.11 3100 55 228 0.42 300 TO-220IXTQ36P15P -150 -36 0.11 3100 55 228 0.42 300 TO-3PIXTA26P20P -200 -26 0.17 2740 56 240 0.42 300 TO-263IXTH26P20P -200 -26 0.17 2740 56 240 0.42 300 TO-247IXTP26P20P -200 -26 0.17 2740 56 240 0.42 300 TO-220IXTQ26P20P -200 -26 0.17 2740 56 240 0.42 300 TO-3PIXTR48P20P -200 -30 0.093 5400 103 260 0.66 190 ISOPLUS247IXTH48P20P -200 -48 0.085 5400 103 260 0.27 462 TO-247IXTT48P20P -200 -48 0.085 5400 103 260 0.27 462 TO-268IXTR90P20P -200 -90 0.048 12000 205 315 0.4 312 ISOPLUS247IXTK90P20P -200 -90 0.044 12000 205 315 0.14 890 TO-264IXTX90P20P -200 -90 0.044 12000 205 315 0.14 890 PLUS247IXTN90P20P -200 -90 0.044 12000 205 315 0.14 890 SOT-227IXTA10P50P -500 -10 1 2840 50 414 0.5 250 TO-263IXTH10P50P -500 -10 1 2840 50 414 0.5 250 TO-247IXTP10P50P -500 -10 1 2840 50 414 0.5 250 TO-220IXTQ10P50P -500 -10 1 2840 50 414 0.5 250 TO-3PIXTR20P50P -500 -13 0.49 5120 103 406 0.66 190 ISOPLUS247IXTH20P50P -500 -20 0.45 5120 103 406 0.27 462 TO-247IXTT20P50P -500 -20 0.45 5120 103 406 0.27 462 TO-268IXTR40P50P -500 -22 0.26 11500 205 477 0.4 312 ISOPLUS247IXTK40P50P -500 -40 0.23 11500 205 477 0.14 890 TO-264IXTX40P50P -500 -40 0.23 11500 205 477 0.14 890 PLUS247IXTN40P50P -500 -40 0.23 11500 205 477 0.14 890 SOT-227IXTR16P60P -600 -10 0.79 5120 92 440 0.66 190 ISOPLUS247IXTH16P60P -600 -16 0.72 5120 92 440 0.27 460 TO-247IXTT16P60P -600 -16 0.72 5120 92 440 0.27 460 TO-268IXTR32P60P -600 -18 0.385 11100 196 480 0.4 310 ISOPLUS247IXTK32P60P -600 -32 0.35 11100 196 480 0.14 890 TO-264IXTX32P60P -600 -32 0.35 11100 196 480 0.14 890 PLUS247IXTN32P60P -600 -32 0.35 11100 196 480 0.14 890 SOT-227