materials synthesis and processing using ion...

Materials Synthesis andProcessing Using Ion Beams

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Cambridge University Press978-1-107-40946-0 - Materials Synthesis and Processing Using Ion Beams: Materials ResearchSociety Symposium Proceedings: Volume 316Editors: Robert J. Culbertson, O. W. Holland, Kevin S. Jones and Karen Maex FrontmatterMore information

http://www.cambridge.org/9781107409460

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 316

Materials Synthesis andProcessing Using Ion Beams

Symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.

EDITORS:

Robert J. CulbertsonArizona State UniversityTempe, Arizona, U.S.A.

O.W. HollandOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.

Kevin S. JonesUniversity of Florida

Gainesville, Florida, U.S.A.

Karen MaexIMEC

Leuven, Belgium

IMIRIS1MATERIALS RESEARCH SOCIETY

Pittsburgh, Pennsylvania






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Contents

PREFACE xvii

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xviii

PART I: RADIATION DAMAGE AND RELATED PHENOMENA

A. Damage Production and Morphology

*ION BEAM INDUCED STRUCTURAL AND ELECTRICAL MODIFICATIONSIN CRYSTALLINE AND AMORPHOUS SILICON 3

S. Coffa, A. Battaglia, and F. Priolo

*DYNAMIC ANNEALING AND AMORPHOUS PHASE FORMATION INSi, GaAs AND AlGaAs UNDER ION IRRADIATION 15

J.S. Williams, H.H. Tan, R.D. Goldberg, R.A. Brown, andC. Jagadish

MICROSTRUCTURES OF Si SURFACE LAYERS IMPLANTED WITH Cu 27David M. Follstaedt and Samuel M. Myers

BINDING OF COPPER AND NICKEL TO CAVITIES IN SILICONFORMED BY HELIUM ION IMPLANTATION 33

S.M. Myers, D.M. Follstaedt, and D.M. Bishop

STUDIES OF DISLOCATION FORMATION IN ANNEALED SELF-ION IRRADIATED SILICON 39

R.D. Goldberg, T.W. Simpson, I.V. Mitchell, and P.J. Schultz

ACCUMULATION OF IMPLANTATION DAMAGE IN MeVIMPLANTED DIAMOND CRYSTALS 45

John D. Hunn, S.P. Withrow, R.E. Clausing, L. Heatherly,J. Bentley, D.M. Hembree, Jr., and N.R. Parikh

CHARACTERIZATION AND APPLICATIONS OF ARSENIC-IMPLANTED MOCVD-GROWN GaAs STRUCTURES 51

Fereydoon Namavar, N. Kalkhoran, A. Cremins, and S. Vernon

REDUCTION OF DEFECT FLUXES USING DUAL-ION-BEAMPROCESSING 57

A. Iwase, L.E. Rehn, P.M. Baldo, P.R. Okamoto, H. Wiedersich,and L. Funk

EFFECT OF ION-BEAM RADIATION ON THE ANISOTROPY OFRESISTIVITY IN YBaXu^O. . THIN FILMS 63

J.Z. Wu, Z.H. Zhang, V.W. Chen, N. Yu, and W.K. Chu

DAMAGE ACCUMULATION IN MgALO4 CRYSTALS BY Xe IONIRRADIATIONS 69

N. Yu, M. Nastasi, M.G. Hollander, C.R. Evans, C.J. Maggiore,K.E. Sickaius, and J.R. Tesmer

THE ELECTRONIC MICROSTRUCTURE IN THE IMPLANT LAYEROF ION IMPLANTED POLYMERS 75

R.E. Giedd, D. Robey, Y.Q. Wang, M.G. Moss, and J. Kaufmann

*Invited Paper






ION DAMAGE STUDIES IN GaAs/Al0 6Ga0 4As/GaAsHETEROSTRUCTURES . 81

B.A. Turkot, D.V. Forbes, H. Xiao, I.M. Robertson, J.J. Coleman,M.A. Kirk, L.E. Rehn, and P. Baido

DETAILS OF THE DEFECT PROFILE IN SELF-ION IMPLANTEDSILICON 87

P.X. Zhang, R.D. Goldberg, I.V. Mitchell, P.J. Schultz,and DJ. Lockwood

DEFECT ENGINEERING AND CHARACTERIZATION IN OXIDESURFACES USING ELECTRON BEAM IRRADIATION 93

D.L. Doering, K.H. Siek, P. Xiong-Skiba, and D.L. Carroll

ION-IRRADIATION-INDUCED DENSIFICATION OF ZIRCONIASOL-GEL THIN FILMS 99

Timothy E. Levine, Emmanuel P. Giannelis, Padma Kodali,Joseph Tesmer, Michael Nastasi, and James W. Mayer

THE INFLUENCE OF AN IN-S1TU ELECTRIC FIELD ON H+

AND He+ IMPLANTATIpN INDUCED DEFECTS IN SILICON 105J. Ravi, Yu. Erokhin, S. Koveshnikov, G.A. Rozgonyi, andC.W. White

EXTENDED DAMAGE DEPTH DETERMINATIONS IN Ar- ANDH-IMPLANTED SILICA GLASS I l l

G.W. Arnold, G. Battaglin, and P. Mazzoldi

HIGH RESISTIVITY IN N-TYPE InP AND InGaAsP BY He+

ION INDUCED AMORPHIZATION 117V. Sargunas, D. Comedi, J. Zhao, K. Jankowska, D.A. Thompson,and J.G. Simmons

HELIUM ION BEAM INDUCED ARSENIC ATOM DISPLACEMENTSTUDIED BY MEDIUM-ENERGY ION SPECTROSCOPY 123

Shin Yokoyama, Zbigniew J. Radzimski, Kensaku Ishibashi,Takeshi Watanabe, and Masataka Hirose

SLIGHT RADIATION DAMAGE IN SILICON FOR Si-BASEDDEVICE PROCESSING 129

A. Harnau and H.-U. Schreiber

NANOSIZED THALLIUM INCLUSIONS IN ALUMINIUM 135E. Johnson, A. Johansen, K.K. Bourdelle, H.H. Andersen,and L. Sarholt-Kristensen

POINT DEFECT PRODUCTION, GEOMETRY AND STABILITY INSILICON: A MOLECULAR DYNAMICS SIMULATION STUDY 141

M.-J. Caturla, T. Diaz de la Rubia, and G.H. Gilmer

DISLOCATION LOOPS IN SPINEL CRYSTALS IRRADIATEDSUCCESSIVELY WITH DEEP AND SHALLOW ION IMPLANTS 147

Rebecca X. Ai, Nicole Bordes, Elizabeth A. Cooper,Kurt E. Sickafus, Rodney C. Ewing, and Michael Nastasi

FLUX DEPENDANCE OF AMORPHOUS LAYER FORMATION ANDDAMAGE ANNEALING IN ROOM TEMPERATURE IMPLANTATIONOF BORON INTO SILICON 153

Robert Simonton, Jinghong Shi, Ted Boden, Philippe Maillot,and Larry Larson

Vi






DIVACANCY ANNEALING IN SILICON MONITORED BYDIFFERENTIAL CALORIMETRY AND INFRARED ABSORPTIONSPECTROSCOPY 159

Sjoerd Roorda

FORMATION AND THERMAL STABILITY OF END-OF-RANGEDEFECTS IN Ge IMPLANTED SILICON 167

M. Seibt, J. Imschweiler, and H.-A. Hefner

B. Thermally Activated Processes: Annealing,Gettering, and Diffusion

RBS STUDY OF THE DIFFUSION OF IMPLANTED Au AND PbIN a-Zr 173

Cesar R.S. da Silva and Fernando C. Zawislak

DIFFUSION OF ION IMPLANTED RUTHENIUM AND OSMIUMIN GaAs AND InP 179

M. Kuttler, A. Knecht, D. Bimberg, and H. Krautle

ION IMPLANTATION DAMAGE AND ANNEALING IN GaSb 185S. Iyer, R. Parakkat, B. Patnaik, N. Parikh, and S. Hegde

EXTENDED DEFECTS IN Fe-IMPLANTED InP AFTER THERMALANNEALING 191

C. Frigeri, C. Bocchi, A. Camera, A. Gasparotto,N. Gambacorti, and F. Longo

MODELING OF DOPANT DIFFUSION DURING ANNEALING OFSUB-AMORPHIZING IMPLANTS 197

Scott Dunham

C. Beam-Induced Phase Transformations: Ion Beam Mixing,Amorphization, and Crystallization

*SOLID-PHASE EPITAXIAL CRYSTALLISATION OF GexSi , xALLOY LAYERS 205

Robert G. Elliman, Wan-Chung Wong, and Per Kringh0j

SUPPRESSION OF THERMAL GRAIN GROWTH IN NICKEL BYPRIOR ELECTRON IRRADIATION 217

Yuzun Gao, Charles W. Allen, and R.C. Birtcher

DEFECT INDUCED AMORPHIZATION IN SILICON: A TIGHTBINDING MOLECULAR DYNAMICS SIMULATION 223

D. Marie and L. Colombo

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OFSINGLE CRYSTALLINE 6H-SJC 229

V. Heera, R. Kogler, W. Skorupa, and E. Glaser

INDUCED CRYSTALLIZATION IN CW LASER-IRRADIATEDSOL-GEL DEPOSITED TITANIA FILMS 235

Gregory J. Exarhos and Nancy J. Hess

DENSITY REDUCTION: A MECHANISM FOR AMORPHIZATIONAT HIGH ION DOSES 241

E.D. Specht, D.A. Walko, and S.J. Zinkle

*Invited Paper

VII






ErrataAMORPHIZATION AND DYNAMIC RECOVERY OF A,BO4 STRUCTURETYPES DURING 1.5 MeV KRYPTON ION-BEAM IRRADIATION 247

L.M. Wang, W.L. Gong, and R.C. Ewing

LAYER BY LAYER AMORPfflZATION IN Si: TEMPERATURE,ION MASS AND FLUX EFFECTS 253

A. Battaglia, G. Romano, and S.U. Campisano

A CRITICAL REGIME FOR AMORPHIZATION OF IONIMPLANTED SILICON 259

R.D. Goldberg, J.S. Williams, and R..G. Elliman

ELECTRON ENERGY DEPENDENCE OF AMORPfflZATION IN Zr.Fe 265A.T. Motta, L.M. Howe, and P.R. Okamoto

MODULATION WAVELENGTH DEPENDENCE OF ION MIXINGIN METALLIC SUPERLATTICES 271

Dale E. Alexander, Eric E. Fullerton, P.M. Baldo, C.H. Sowers,and L.E. Rehn

ATOMIC TRANSPORT BY BALLISTIC ATOMIC MIXING EFFECTIN BILAYER STRUCTURE 277

K.H. Chae, J.M. Choi, S.M. Jung, J.H. Song, J.J. Woo, andC.N. Whang

METASTABLE CRYSTALLINE PHASES SYNTHESIZED BY IONBEAM MIXING IN SOME Nb-BASED BINARY METAL SYSTEMS 283

B.X. Liu and Z J . Zhang

A CUBIC PHASE FORMED IN IMMISCIBLE Fe/Ag(Cu) SYSTEMSBY ION MIXING 289

B.X. Liu, F. Pan, and K. Tao

PART II: MATERIALS MODIFICATIONBY IMPLANTATION DOPING

A. Electrical

*A VIEW OF THE COMMERCIAL APPLICATION OF IONIMPLANTATION FOR SILICON VLSI MANUFACTURING 297

Michael I. Current

ION IMPLANTATION DOPING OF SEMI-INSULATINGPOLYCRYSTALLINE SILICON 307

Salvatore Lombardo and S.U. Campisano

BARRIER EFFECT OF RETROGRADE WELL AGAINST ION-INDUCED-CHARGE CARRIERS .313

Hirokazu Sayama, Takehisa Kishimoto, Mikio Takai,Hiroshi Kimura, Yoshikazu Ohno, Ken-Ichiro Sonoda,Norihiko Kotani, and Shin-Ichi Satoh

ION BEAM PROCESSING OF InGaAsP 319S.J. Pearton, C.R. Abernathy, P.W. Wisk, and F. Ren

THE EFFECTS OF AMORPHOUS LAYER REGROWTH ON CARBONACTIVATION IN GaAs AND InP 325

A.J. Moll, J.W. Ager III, K.M. Yu, W. Walukiewicz, andE.E. Haller

CHANNELING PHENOMENA OF DIRECT Si-IMPLANTATION TOLIQUID-GLASS ENCAPSULATION CZOCHRALSKI GaAs CRYSTALWAFERS THROUGH OBSERVATWN OF THRESHOLD VOLTAGES . . 331

Yasuyuki Saito and Katsuyoshi Fukuda

*Invited Paperviii






rTHE EFFECT OF MASS RESOLUTION DURING ION IMPLANTATIONON DEFECT FORMATION AND ELECTRICAL PROPERTIES INGALLIUM ARSENIDE 337

Craig Jasper, Scott Klingbeil, K.S. Jones, and H.G. Robinson

FORMATION OF SHALLOW ENERGY LEVELS IN Mn+ IMPLANTEDGaAs WITH EXTREMELY LOW BACKGROUND IMPURITYCONCENTRATION 343

Honglie Shen, Yunosuke Makita, Akimasa Yamada, Shigeru Niki,Tsutomu Iida, Hajime Shibata, Paul Fons, and Akira Obara

PIEZORESISTIVITY IN ION IMPLANTED POLYMER FILMS 349Y.Q. Wang, D.S. Robey, R.E. Giedd, and M.G. Moss

ION BEAM SURFACE MODIFICATION FOR ACHIEVINGRECTIFICATION IN GOLD-ALUMINUM NITRIDE-SILICONJUNCTIONS 355

T. Stacy, B.Y. Liaw, A.H. Khan, G. Zhao, E.M. Charlson,EJ. Charlson, J.M. Meese, M. Prelas, J.L. Wragg,J.E. Chamberlain, and H.W. White

MeV BORON IMPLANTATION AND MASKING 361James P. Lavine, A.J. Filo, D.L. Losee, P.A. Guidash, S.-T. Lee,G.H. Braunstein, S.L. Kosman, and H. Kyan

STRUCTURE AND ELECTRICAL PROPERTIES OF YTTRIA STABILIZEDZIRCONIA BY IRON ION IMPLANTATION 367

Wang Guomei and Qu Zuyuan

DISCHARGE-PUMPED VUV F2 MOLECULAR LASER ANNEALING OFHEAVILY Se+-IMPLANTED GaAs 373

Hajime Shibata, Yunosuke Makita, Kawakatsu Yamada, Yutaka Uchida,and Sabro Satoh

THERMALLY STABLE OXYGEN AND NITROGEN IMPLANT ISOLATIONOF C-DOPED AlO33Ga«65As 379

J.C. Zolper, M.E. Sherwin, A.G. Baca, and R.P. Schneider, Jr.

B. Optical

•ERBIUM ION IMPLANTATION FOR OPTICAL DOPING 385A. Polman

*ERBIUM IMPLANTATION IN SILICON: A WAY TOWARDS Si-BASEDOPTOELECTRONICS 397

F. Priolo, G. Franz6, S. Coffa, A. Polman, V. Bellani,A. Camera, and C. Spinella

*ION BEAM SYNTHESIS OF LUMINESCENT Si AND Ge NANOCRYSTALSIN A SILICON DIOXIDE MATRIX 409

H.A. Atwater, K.V. Shcheglov, S.S. Wong, K.J. Vahala, R.C. Flagan,M.L. Brongersma, and A. Polman

•NONLINEAR OPTICAL MATERIALS SYNTHESIZED BY IONIMPLANTATION: METAL QUANTUM DOTS IN TRANSPARENTDIELECTRICS 421

Richard F. Haglund, Jr., D.H. Osborne, Jr., Li Yang,R.H. Magruder III, C.W. White, and R.A. Zuhr

•Invited Paper

ix






EFFECTS OF ANNEALING AND COBALT IMPLANTATION ON THEOPTICAL PROPERTIES OF jSFeSij 433

M.S. Finney, Z. Yang, M.A. Harry, K.J. Reeson, K.P. Homewood,R.M. Gwilliam, and B.J. Sealy

TEMPERATURE DEPENDENCE OF THE FADING SPEED OFBLUE-GREEN PRODUCED BY Cu ION IMPLANTATION INTO LiNbO3 439

Yukinori Saito, Shinji Suganomata, and P. Moretti

THE EFFECT OF Si, F IMPLANTATION ON THE FORMATION ANDLIGHT EMITTING PROPERTIES OF POROUS SILICON 445

Lianwei Wang, Chenglu Lin, Ping Liu, Zuyao Zhou, andShichang Zou

HOST GUEST INTERACTIONS IN Ti-IMPLANTED SILICA,BOROSILICATE AND ALUMINOSILICATE GLASSES 451

D.O. Henderson, S.H. Morgan, R. Mu, W.E. Collins, R.H. Magruder,C.W. White, and R.A. Zuhr

NANOSIZE METAL ALLOY PARTICLE FORMATION IN Ag AND CuSEQUENTIALLY IMPLANTED SILICA 457

R.A. Zuhr, R.H. Magruder III, T.A. Anderson, and J.E. Wittig

OPTICAL AND STRUCTURAL PROPERTIES OF MeV ERBIUMIMPLANTED LiNbQ, 463

M. Fleuster, Ch. Buchal, E. Snoeks, and A. Polman

CHARACTERIZATION OF THERMALLY ANNEALED Sb IMPLANTEDFUSED SILICA 469

S.H. Morgan, Z. Pan, D.O. Henderson, S.Y. Park, R.A. Weeks,R.H. Magruder III, and R.A. Zuhr

NANO-STRUCTURE Ge FORMED IN THIN FILM SiO2 USING IONIMPLANTATION 475

J.R. Phillips, Olof C. Hellman, N. Kobayashi, Yunosuke Makita,Hajime Shibata, A. Yamada, P. Fons, Yushin Tsai, Shigeru Niki,Masataka Hasegawa, and Tsutomu Iida

ION-IMPLANTED THIN FILM PHOSPHORS FOR FULL-COLORFIELD EMISSION DISPLAYS 481

Nader M. Kalkhoran, H. Paul Maruska, and Fereydoon Namavar

ORIENTED Si AND Ge NANOCRYSTALS FORMED IN AL,O3 BYION IMPLANTATION AND ANNEALING 487

C.W. White, J.D. Budai, S.P. Withrow, S.J. Pennycook,D.M. Hembree, D.S. Zhou, T. Vo-Dinh, and R.H. Magruder

FLUORINE-ENHANCED Si:Er LIGHT EMISSION 493F.Y.G. Ren, J. Michel, D.C. Jacobson, J.M. Poate, and L.C. Kimerling

COLLOIDAL Au NANOCLUSTERS FORMED IN FUSED SILICABY MeV ION IMPLANTATION AND ANNEALING 499

C.W. White, D.S. Zhou, J.D. Budai, R.A. Zuhr, R.H. Magruder, andD.H. Osborne

C. Tribological

*ION IMPLANTATION INTO HIGH-SPEED STEEL FOR IMPROVEDTECHNOLOGY 507

J-P. Hirvonen, D. Ruck, S. Yan, R. Lappalainen, and P. Torri

*Invited Paper






*THERMAL SURFACE TREATMENT USING INTENSE, PULSED IONBEAMS 521

R.W. Stinnett, R.G. Buchheit, F.A. Greulich, C.R. Hills, A.C. Kilgo,D.C. Mclntyre, J.B. Greenly, M.O. Thompson, G.P. Johnston,and DJ. Rej

*U.S. DoD APPLICATIONS OF ION BEAM PROCESSING 533James K. Hirvonen

*ION BEAM ASSISTED DEPOSITION-R&D TO PRODUCTION 545James K. Hirvonen

THE TRIBOLOGICAL PROPERTIES FOR PULSED W+C ANDMo+C DUAL IMPLANTED H13 STEEL 557

Zhang Tonghe, Wei Fuzhong, Chen Jun, Zhang Huixing, Zhang Xioji,Lu Ting, and Sun Guiru

TRIBOMECHANICAL PROPERTY MODIFICATION OF COMMERCIALTiN COATINGS BY CARBON ION IMPLANTATION 563

L.J. Liu, D.K. Sood, and R.R. Manory

TANTALUM ION IMPLANTATION INTO Cu-12Nb FORELECTROMAGNETIC RAILGUN TECHNOLOGY 569

M.A. Otooni, Ian Brown, Xiang You, and S. Foner

APPLICATION OF COATINGS FOR ELECTROMAGNETIC GUN TECHNOLOGY 577M.A. Otooni, A. Graf, G. Colombo, J. Conrad, K. Sridharan,M.M. Shamim, R.P. Fetherston, and A. Chen

SURFACE MODIFICATION OF ELECTROMAGNETIC RAILGUN COMPONENTS 585M.A. Otooni, A. Graf, C. Dunham, Ian Brown, and Xiang Yao

FIRST RESULTS FROM THE LOS ALAMOS PLASMA SOURCE IONIMPLANTATION EXPERIMENT 593

D.J. Rej, J.R. Conrad, R.J. Faehl, RJ. Gribble, I. Henins, N. Horswill,P. Kodali, M. Nastasi, W.A. Reass, M. Shamim, K. Sridharan, J.R. Tesmer,K.C. Walter, and B.P. Wood

IMPROVEMENT OF STRENGTH AND RELIABILITY OF STRUCTURALCERAMIC THROUGH ION IMPLANTATIONS 599

Rabi S. Bhattacharya and A.K. Rai

STRUCTURAL CHARACTERISTICS AND TRIBOLOGICAL PROPERTIESOF DIAMONDLIKE CARBON FILMS 605

Xiao-Ming He, Wen-Zhi Li, and Heng-De Li

D. Characterization, Simulation,Implantation Equipment

*LARGE SCALE ION BEAM EQUIPMENT AND PROCESSING-REVIEW OFAMMTRA PROJECT 611

Koji Matsuda

A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORONIMPLANTS INTO (100) SINGLE-CRYSTAL SILICON 623

Steven J. Morris, Shyh-Horng Yang, David H. Lim, and Al F. Tasch

ION IMPLANTATION DISTRIBUTION STUDY IN BIOLOGICAL SAMPLES 629Ting Lu, Fengsui Zhu, and Shanyuan Zhou

*Invited Paper

XI






IN-SITU CONTROL OF WAFER CHARGE NEUTRALIZATION DURINGHIGH CURRENT ION IMPLANTS 633

E.N. Shauly, E. Koltin, I. Munin, and Y. Avrahamov

A MORE EFFICIENT APPROACH FOR MONTE CARLO SIMULATION OFDEEPLY-CHANNELED IMPLANTED PROFILES IN SINGLE-CRYSTAL SILICON 639

Shyh-Horng Yang, David Lim, Steven J. Morris, and Al F. Tasch

NEW METHOD FOR THE FULL PROCESSING OF EXPERIMENTALSPECTRA IN THE RESONANT NUCLEAR REACTION ANALYSIS 645

Alexander I. Kul'ment'ev and Oleg I. Zabashta

THE USE OF NEGATIVE IONS IN ION IMPLANTATION WITH TANDEMHIGH ENERGY ACCELERATORS 649

John P. O'Connor and Nobuhiro Tokoro

HIGH RESOLUTION TRIPLE AXIS DIFFRACTOMETRY IN INDIUM-CARBONAND GALLIUM-CARBON CO-IMPLANTED GALLIUM ARSENIDE 655

S.T. Horng, J.H. Madok, N.M. Haegel, and M.S. Goorsky

CHANNELING IN LiNbO3:Fe MODULATED BY HOLOGRAPHIC STRESSFIELD SUPERLATTICE 661

N. Kukhtarev, T. Kukhtareva, D. Ila, E.K. Williams, R.L. Zimmerman,and H J . Caulfield

ELECTRIC FIELD INDUCED DE-CHANNELING IN LiNbO, 667R.L. Zimmerman, D. Ila, N. Kukhtarev, and E.K. Williams

ION IMPLANTATION MONITORING OF GaAs USING THERMAL WAVES 673R. Garcia, E J . Jaquez, R J . Culbertson, C. D'Acosta, and C. Jasper

VISUALIZATION OF ION CHANNELING OF (100)Si AND S i ^ G e ,EPITAXIAL GROWN LAYERS ON SILICON 679

M. Xu, Z. Atzmon, A. Schroer, B.J. Wilkens, and J.W. Mayer

PART III: ION BEAM SYNTHESIS BYHIGH-DOSE IMPLANTATION

*RECENT PROGRESS IN SOI MATERIALS AND DEVICES FORVLSI APPLICATIONS 687

H.H. Hosack

*SIMOX MATERIAL DEVELOPMENT FOR SUB-0.25/im CMOSTECHNOLOGY 699

D.K. Sadana, H J . Hovel, J.L. Freeouf, and S.F. Chu

ION BEAM SYNTHESIS OF BURIED CoxNL£L LAYERS IN SILICON 711M.F. Wu, J. De Wachter, A.-M. Van Bavel, H. Pattyn, G. Langouche,J. Vanhellemont, H. Bender, K. Temst, B. Wuyts, and Y. Bruynseraede

CRYSTALLOGRAPHIC STRUCTURE OF MESOTAXIAL IrSi3 IN Si 717H.-J. Hinneberg, T.P. Sjoreen, and M.F. Chisholm

ELECTRICAL AND OPTICAL PROPERTIES OF Co ALLOYED /J-FeSLFORMED BY ION BEAM SYNTHESIS 723

D. Panknin, W. Henrion, E. Wieser, M. Voelskow, W. Skorupa,and H. Vohse

EXPERIMENTAL STUDY OF PRECIPITATION PROCESSES INOXYGEN IMPLANTED SILICON 729

R. Weber, R. Yankov, R. Muller, W. Skorupa, S. Reiss, and K.-H. Heinig

*Invited Paper

xii






Si ION IMPLANTATION FOR SECONDARY DEFECT REDUCTIONIN SIMOX MATERIAL 735

S.L. Ellingboe and M.C. Ridgway

FORMATION OF CoSL WIRES BY MASKLESS IMPLANTATION WITHTHE FOCUSED ION BEAM 741

J. Teichert, L. Bischoff, E. Hesse, D. Panknin, and W. Skorupa

ION BEAM SYNTHESIS OF IrSL BY 1-MeV Ir ION IMPLANTATIONINTO Si(ll l) : 747

T.P. Sjoreen and H.-J. Hinneberg

DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES INHIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL 753

J.D. Lee, J.C. Park, D. Venables, SJ. Krause, and P. Roitman

CHARACTERIZATION OF GeSi LAYER FORMED BY HIGH DOSE GeIMPLANTATION INTO Si 759

W.Y. Cheung, S.P. Wong, I.H. Wilson, and T.H. Zhang

SYNTHESIS OF (SiC)3N4 THIN FILMS BY ION IMPLANTATION 765C. Uslu, D.H. Lee, Y. Berta, B. Park, N.N. Thadhani, and D.B. Poker

FORMATION OF SiGe AND SiGeC LAYERS ON Si BY Ge AND C IONIMPLANTATION AND SUBSEQUENT ION-BEAM-INDUCED EPITAXIALCRYSTALLIZATION 771

Naoto Kobayashi, Masataka Hasegawa, J.R. Phillips, Nobuyuki Hayashi,Hisao Tanoue, Hajime Shibata, and Yunosuke Makita

ION IMPLANTATION OF Ti,Mo W,Mo+C and W+C IN H13 STEELAND ALUMINUM AT ELEVATED TEMPERATURE 777

Zhang Tonghe, Wei Fuzhong, Chen Jun, Zhang Huixing, Zhang Xioji, andLu Ting

OXIDE FORMATION ON NbAL AND TiAl DUE TO ION IMPLANTATIONOF 18O 783

Robert J. Hanrahan, Jr., Ellis D. Verink, Jr., Stephen P. Withrow, andEero O. Ristolainen

EVOLUTION OF DEFECT AND IMPURITY PROFILE DURING HIGH DOSECo IMPLANTATION INTO Si AT ELEVATED TEMPERATURES 789

S. Schippel and A. Witzmann

METAL VAPOUR VACUUM ARC ION SOURCE TO SYNTHESIZEREFRACTORY METAL SILICIDES 795

B.X. Liu, D.H. Zhu, H.B. Lu, and K. Tao

GROWTH RATE OF SOLDER INTERMETALLICS 801J.D. Demaree

ULTRATHIN NITRIDE FILMS GROWN UNDER LOW-ENERGYION BOMBARDMENT 809

Zhong-Min Ren, Zhi-Feng Ying, Xia-Xing Xiong, Mao-Qi He,Yuan-Cheng Du, Liang-Yao Chen, and Fu-Ming Li

CHARACTERIZATION OF ION BEAM SYNTHESIZED MATERIALSUSING MICROSCOPE-SPECTROPHOTOMETRY 813

Rachel M. Geatches, Karen J. Reeson, Alan J. Criddle, Mark S. Finney,Milton A. Harry, Roger P. Webb, and Peter J. Pearson

IS SELF-ORGANISATION DURING OSTWALD RIPENING A CRUCIALPROCESS IN ION BEAM SYNTHESIS? 819

S. Reiss, K.-H. Heinig, R. Weber, and W. Skorupa

xiii






SYNTHESIS OF Si,_xGe -ON-INSULATOR BY 74Ge+ ION IMPLANTATIONIN A SIMOX SUBSTRATE 825

C J . Patel, C D . Marsh, U. Magnusson, C. Jeynes, M. Ostling,H. Norstrom, G.R. Booker, and J.B. Butcher

PART IV: LOW-ENERGY ION EFFECTS

A. Direct or Assisted Thin-Film Depositionby Ion Beams

*LOW ENERGY ION IMPLANTATION/DEPOSITION AS A FILM SYNTHESISAND BONDING TOOL 833

Andre" Anders, Simone Anders, Ian G. Brown, and Igor C. Ivanov

ELEMENT PROFILES OF SURFACE LAYERS CREATED BY METALION BEAM ASSISTED DEPOSITION 845

Sergei M. Duvanov, Alexander P. Kobzev, and Alexander M. Tolopa

ADHESION AND TRIBOLOGICAL BEHAVIOR OF Si-DLC COATINGS ONSTEEL PROCESSED BY ION BEAM-ASSISTED DEPOSITION 851

C.G. Fountzoulas, T.Z. Kattamis, and M. Chen

IN-PLANE MAGNETIC AND STRUCTURAL ANISOTROPIES INNi AND Fe FILMS PRODUCED BY ION-ASSISTED DEPOSITION 857

W.A. Lewis, M. Farle, B.M. Clemens, and R.L. White

LOW ENERGY ION BEAM ASSISTED DEPOSITION OF LOWRESISTIVITY ALUMINUM USING TMAA 863

H.Q. Yan, H. Wang, and A.J. Steckl

ION BEAM-ASSISTED DEPOSITION OF BORON NITRIDE FROM ACONDENSED LAYER OF DIBORANE AND AMMONIA AT 78 K 869

R J . Kroczynski, D.R. Strongin, M.W. Ruckman, and M. Strongin

DEVELOPMENT OF AN ATOMIC OXYGEN SOURCE FOR THIN OXIDEFILM FORMATION 875

S. Inoue, Y. Kawagoe, K. Yamanishi, and M. Tanaka

CHARACTERIZATION OF DOPED DIAMONDLIKE CARBON FILMS ANDMULTILAYERS 881

H.C. Hofsass, J. Biegel, C. Ronning, R.G. Downing, and G.P. Lamaze

EPITAXIAL PLANARIZATION USING ION BEAM ASSISTEDDEPOSITION 887

Bertha P. Chang, Neville Sonnenberg, Paul C. Mclntyre, Michael J. Cima,Jonathan Z. Sun, and Lock See Yu-Jahnes

DEPOSITION OF DLC VIA INTENSE ION BEAM ABLATION 893Gregory P. Johnston, Prabhat Tiwari, Donald J. Rej, Harold A. Davis,William J. Waganaar, Ross E. Muenchausen, David Tallant,Regina L. Simpson, David B. Williams, and Xiamei Qui

ECR PLASMA SYNTHESIS OF SILICON NITRIDE FILMS ON GaAsAND InSb 899

J.C. Barbour, M.L. Lovejoy, C.I.H. Ashby, A.J. Howard, J.S. Custer,and R.J. Shul

LOW TEMPERATURE EPITAXIAL GROWTH OF TiO2 RUTILE FILMS BYICB DEPOSITION AND MECHANICAL PROPERTIES IN HELIUMIMPLANTED RUTILE FILMS 905

K. Fukushima, G.H. Takaoka, and I. Yamada

*Invited Paper

xiv






HARD CARBON FILMS WITH VARIOUS MICROSTRUCTURE PREPAREDBY ION ASSISTED EVAPORATION 911

J. Ullmann, A. Weber, and U. Falke

TiOX,, THIN FILM DEPOSITION BY CO2+-ION BEAM SPUTTERING

OF TITANIUM 917Bertilo E. Kempf

EFFECTS OF NITROGEN ON FORMATION AND PROPERTIES OFDIAMONDLIKE FILMS SYNTHESIZED BY DUAL K)N BEAM DEPOSITION 923

Xiaoming He, Hongwei Song, Wenzhi Li, Fuzhai Cui,Hengde Li, Yu Wang, and Dawei You

STRESSES IN ION ASSISTED DEPOSITED OXIDE THIN FILMS 929M. Ghanashyam Krishna, Mansour Al Robaee, S. Kanakaraju,K. Narasimha Rao, and S. Mohan

PTCDA FILMS DEPOSITED BY IONIZED BEAM METHOD 935Hiroaki Usui, Kiyoshi Kashihara, Kuniaki Tanaka, and Seizo Miyata

MICROSTRUCTURE AND RESIDUAL STRESSES IN ALA PREPAREDBY ION BEAM ASSISTED DEPOSITION 941

M.G. Goldiner, G.S. Was, LJ. Parfitt, and J.W. Jones

FABRICATION OF W/C MULTILAYERS BY DIRECT ION BEAMDEPOSITION 947

K. Ito, K. Nishimoto, K. Watanabe, I. Kataoka, and Fr&teric Widmann

ION BEAM-ASSISTED DEPOSITION OF BIAXIALLY ALIGNED CeO2AND ZrO2 THIN FILMS ON AMORPHOUS SUBSTRATES 953

Kevin G. Ressler, Neville Sonnenberg, and Michael J. Cima

NUCLEATION AND GROWTH OF CUBIC BORON NITRIDE FILMSPRODUCED BY ION-ASSISTED PULSED LASER DEPOSITION 959

T.A. Friedmann, D.L. Medlin, P.B. Mirkarimi, K.F. McCarty,E.J. Klaus, D.R. Boehme, H.A. Johnsen, MJ. Mills, D.K. Ottesen,and J.C. Barbour

B. Physical Effects: Sputtering, Etching,Doping, and Damage

*DAMAGE-FREE ION BEAM DOPING OF CARBON DURING MOLECULARBEAM EPITAXY OF GaAs 965

Yunosuke Makita, Tsutomu Iida, Shinji Kimura, Stefan Winter,Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki,Yushin Tsai, and Shin-ichiro Uekusa

*AN OVERVIEW OF DRY ETCHING DAMAGE 977Stephen J. Fonash

SURFACE MICROSTRUCTURE OF HIGH TEMPERATURE BERYLLIUMIMPLANTED WITH DEUTERIUM 987

K. Touhouche and B. Terreault

INTRA-CASCADE SURFACE RECOMBINATION OF POINT DEFECTSDURING ION BOMBARDMENT OF Ge (001) 993

J.A. Floro, B.K. Kellerman, E. Chason, S.T. Picraux, D.K. Brice,and K.M. Horn

MOLECULAR DYNAMICS SIMULATION OF THE EFFECTS OFENERGETIC CLUSTER ION IMPACT ON SOLID SURFACE 999

Z. Insepov, M. Sosnowski, G.H. Takaoka, and I. Yamada

•Invited Paper

XV






IRRADIATION EFFECTS OF Ar-CLUSTER ION BEAMS ON Si SURFACES 1005G.H. Takaoka, G. Sugahara, R.E. Hummel, J.A. Northby, M. Sosnowski,and I. Yamada

EFFECTS OF HYPERTHERMAL CARBON SUBIMPLANTATION DOPING ONTHE RAMAN SPECTRA OF GaAs 1011

P. Fons, Yunosuke Makita, Shinji Kimura, Tsutomu Iida, Akimasa Yamada,Hajime Shibata, Akira Obara, Yushin Tsai, and Shin-Ichiro Uekusa

STRUCTURAL ANALYSIS OF SILICON DOPED BY PLASMA SOURCEION IMPLANTATION 1017

RJ. Matyi, D.L. Chapek, J.R. Conrad, and S.B. Felch

MOLECULAR DYNAMICS SIMULATIONS OF DIAMOND ANDCARBON CLUSTERS 1023

Bernard A. Pailthorpe

LOW TEMPERATURE PHOTOLUMINESCENCE FROM GaAs IMPINGED BYMASS-SEPARATED LOW-ENERGY C+ ION BEAMS DURING MOLECULARBEAM EPITAXY 1029

Tsutomu Iida, Yunosuke Makita, Stefan Winter, Shinji Kimura, Yushin Tsai,Yoko Kawasumi, Paul Fons, Akimasa Yamada, Hajime Shibata, Akira Obara,Shigeru Niki, Shin-ichiro Uekusa, and Takeyo Tsukamoto

FORMATION OF DOUBLE-HEIGHT Si(001) STEPS BY SPUTTERINGWITH Xe IONS-A COMPUTER SIMULATION 1035

K.-H. Heinig, D. Stock, H. Boettger, V.A. Zinovyev, A.V. Dvurechenskii,and L.N. Aleksandrov

REACTIVE ION ETCHING PROCESSES FOR AMORPHOUS GERMANIUMALLOYS 1041

Yue Kuo

INVESTIGATION OF DAMAGE INDUCED BY LOW ENERGY FOCUSEDION BEAM IRRADIATION IN GaAs 1047

Toshihiko Kosugi, Yoshihiko Yuba, and Kenji Gamo

ULTRATHIN LOW ENERGY SIMOX FOR LOW COST, HIGH DENSITYAPPLICATIONS 1053

Fereydoon Namavar, N.M. Kalkhoran, and A. Cremins

APPLICATION OF ION-PLASMA-ELECTRON TECHNOLOGICALSOURCE TAMEK FOR MODIFICATION OF MATERIALS 1059

Alexander M. Tolopa

LIGHT IMPURITY DEPTH PROFILING IN THE NUCLEARREACTION ANALYSIS 1065

Oleg I. Zabashta, A.I. KuTment'ev, and V.E. Storizko

AUTHOR INDEX 1071

SUBJECT INDEX 1077

XV!






Preface

This volume contains papers presented at Symposium A of the 1993 MRS Fall Meetingheld November 29-December 3, 1993 in Boston, Massachusetts. This symposium, entitled"Materials Synthesis and Processing Using Ion Beams," brought together scientists andengineers involved in research related to ion-beam modification of materials. It consistedof 19 sessions (15 oral and 4 poster) over 4 1/2 days, and included two joint sessions: onewith Symposium D, "Silicides, Germanides and Their Interfaces," and one with SymposiumE, "Crystallization and Related Phenomena in Amorphous Materials: Ceramics, Metals,Polymers, and Semiconductors." The papers in this volume are not necessarily published inthe order of presentation at the meeting, but rather topically according to content. A peerreview process was used in refereeing the papers.

The symposium featured a wide range of issues related to beam-solid interactions, inparticular those resulting in materials modification. A strong emphasis on commercializa-tion emerged from the meeting that was highlighted by a half-day panel discussion heldspecifically to address issues related to the commercialization of various ion-beam tech-nologies. Research highlights included innovations in nanostructuring of materials by ionimplantation especially in the areas of optics and optoelectronics. Visible photolumines-cence arising from quantum confinement effects in colloidal glasses were reported, as wellas nonlinear optical responses in a host of implanted dielectrics. Also, results werepresented which provided insight into the role of impurities in enhancing the photolumines-cence yield of Er-implanted Si. "Defect engineering" of material is another area whereimportant innovation is occurring. This is particularly true in the area of SIMOX where itwas shown that appropriate manipulation of ion-induced defect profiles could markedlyreduce the dislocation density in the material.

Financial support from the following companies or organizations, which was of criticalimportance to the success of this symposium, is gratefully acknowledged:

Ion Tech Inc.National Electrostatics CorporationVarian Associates Inc., Ion Implant SystemsOak Ridge National LaboratoryApplied MaterialsNissin Electric Company Ltd.

We would also like to thank Ms. Kristen Perkins for her secretarial support.

Robert J. CulbertsonO.W. HollandKevin S. JonesKaren Maex

xvii






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 297— Amorphous Silicon Technology—1993, E.A. Schiff, M.J. Thompson,P.G. LeComber, A. Madan, K. Tanaka, 1993, ISBN: 1-55899-193-X

Volume 298— Silicon-Based Optoelectronic Materials, R.T. Collins, M.A. Tischler,G. Abstreiter, M.L. Thewalt, 1993, ISBN: 1-55899-194-8

Volume 299— Infrared Detectors—Materials, Processing, and Devices, A. Appelbaum,L.R. Dawson, 1993, ISBN: 1-55899-195-6

Volume 300— III-V Electronic and Photonic Device Fabrication and Performance,K.S. Jones, SJ . Pearton, H. Kanber, 1993, ISBN: 1-55899-196-4

Volume 301— Rare-Earth Doped Semiconductors, G.S. Pomrenke, P.B. Klein,D.W. Langer, 1993, ISBN: 1-55899-197-2

Volume 302— Semiconductors for Room-Temperature Radiation Detector Applications,R.B. James, P. Siffert, T.E. Schlesinger, L. Franks, 1993,ISBN: 1-55899-198-0

Volume 303— Rapid Thermal and Integrated Processing II, J.C. Gelpey, J.K. Elliott,J.J. Wortman, A. Ajmera, 1993, ISBN: 1-55899-199-9

Volume 304— Polymer/Inorganic Interfaces, R.L. Opila, A.W. Czanderna, F.J. Boerio,1993, ISBN: 1-55899-200-6

Volume 305— High-Performance Polymers and Polymer Matrix Composites, R.K. Eby,R.C. Evers, D. Wilson, M.A. Meador, 1993, ISBN: 1-55899-201-4

Volume 306— Materials Aspects of X-Ray Lithography, G.K. Celler, J.R. Maldonado, 1993,ISBN: 1-55899-202-2

Volume 307— Applications of Synchrotron Radiation Techniques to Materials Science,D.L. Perry, R. Stockbauer, N. Shinn, K. D'Amico, L. Terminello, 1993,ISBN: 1-55899-203-0

Volume 308— Thin Films—Stresses and Mechanical Properties IV, P.H. Townsend,J. Sanchez, C-Y. Li, T.P. Weihs, 1993, ISBN: 1-55899-204-9

Volume 309— Materials Reliability in Microelectronics HI, K. Rodbell, B. Filter, P. Ho,H. Frost, 1993, ISBN: 1-55899-205-7

Volume 310— Ferroelectric Thin Films III, E.R. Myers, B.A. Tuttle, S.B. Desu,P.K. Larsen, 1993, ISBN: 1-55899-206-5

Volume 311— Phase Transformations in Thin Films—Thermodynamics and Kinetics,M. Atzmon, J.M.E. Harper, A.L. Greer, M.R. Libera, 1993,ISBN: 1-55899-207-3

Volume 312— Common Themes and Mechanisms of Epitaxial Growth, P. Fuoss, J. Tsao,D.W. Kisker, A. Zangwill, T.F. Kuech, 1993, ISBN: 1-55899-208-1

Volume 313— Magnetic Ultrathin Films, Multilayers and Surfaces/Magnetic Interfaces-Physics and Characterization (2 Volume Set), C. Chappert, R.F.C. Farrow,B.T. Jonker, R. Clarke, P. Griinberg, K.M. Krishnan, S. Tsunashima/E.E. Marinero, T. Egami, C. Rau, S.A. Chambers, 1993,ISBN: 1-55899-211-1

Volume 314— Joining and Adhesion of Advanced Inorganic Materials, A.H. Carim,D.S. Schwartz, R.S. Silberglitt, R.E. Loehman, 1993, ISBN: 1-55899-212-X

Volume 315— Surface Chemical Cleaning and Passivation for Semiconductor Processing,G.S. Higashi, E.A. Irene, T. Ohmi, 1993, ISBN: 1-55899-213-8






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 316—Materials Synthesis and Processing Using Ion Beams, R.J. Culbertson,K.S. Jones, O.W. Holland, K. Maex, 1994, ISBN: 1-55899-215-4

Volume 317—Mechanisms of Thin Film Evolution, S.M. Yalisove, C.V. Thompson,D.J. Eaglesham, 1994, ISBN: 1-55899-216-2

Volume 318—Interface Control of Electrical, Chemical, and Mechanical Properties,S.P. Murarka, T. Ohmi, K. Rose, T. Seidel, 1994, ISBN: 1-55899-217-0

Volume 319—Defect-Interface Interactions, E.P. Kvam, A.H. King, M.J. Mills, T.D. Sands,V. Vitek, 1994, ISBN: 1-55899-218-9

Volume 320—Silicides, Germanides, and Their Interfaces, R.W. Fathauer, L. Schowalter,S. Mantl, K.N. Tu, 1994, ISBN: 1-55899-219-7

Volume 321—Crystallization and Related Phenomena in Amorphous Materials, M. Libera,T.E. Haynes, P. Cebe, J. Dickinson, 1994, ISBN: 1-55899-220-0

Volume 322—High-Temperature Silicides and Refractory Alloys, B.P. Bewlay, J.J. Petrovic,C.L. Briant, A.K. Vasudevan, H.A. Lipsitt, 1994, ISBN: 1-55899-221-9

Volume 323— Electronic Packaging Materials Science VII, R. Pollak, P. Borgesen,H. Yamada, K.F. Jensen, 1994, ISBN: 1-55899-222-7

Volume 324— Diagnostic Techniques for Semiconductor Materials Processing,O.J. Giembocki, F.H. Pollak, S.W. Pang, G. Larrabee, G.M. Crean, 1994,ISBN: 1-55899-223-5

Volume 325— Physics and Applications of Defects in Advanced Semiconductors,M.O. Manasreh, M. Lannoo, H.J. von Bardeleben, E.L. Hu, G.S. Pomrenke,D.N. Talwar, 1994, ISBN: 1-55899-224-3

Volume 326—Growth, Processing, and Characterization of Semiconductor Heterostructures,G. Gumbs, S. Luryi, B. Weiss, G.W. Wicks, 1994, ISBN: 1-55899-225-1

Volume 327—Covalent Ceramics II: Non-Oxides, A.R. Barron, G.S. Fischman, M.A. Fury,A.F. Hepp, 1994, ISBN: 1-55899-226-X

Volume 328—Electrical, Optical, and Magnetic Properties of Organic Solid State Materials,A.F. Garito, A. K-Y. Jen, C. Y-C. Lee, L.R. Dalton, 1994,ISBN: 1-55899-227-8

Volume 329—New Materials for Advanced Solid State Lasers, B.H.T. Chai, T.Y. Fan,S.A. Payne, A. Cassanho, T.H. Allik, 1994, ISBN: 1-55899-228-6

Volume 330— Biomolecular Materials By Design, H. Bayley, D. Kaplan, M. Navia, 1994,ISBN: 1-55899-229-4

Volume 331—Biomaterials for Drug and Cell Delivery, A.G. Mikos, R. Murphy,H. Bernstein, N.A. Peppas, 1994, ISBN: 1-55899-230-8

Volume 332— Determining Nanoscale Physical Properties of Materials by Microscopy andSpectroscopy, M. Sarikaya, M. Isaacson, H.K. Wickramasighe, 1994,ISBN: 1-55899-231-6

Volume 333—Scientific Basis for Nuclear Waste Management XVII, A. Barkatt,R. Van Konynenburg, 1994, ISBN: 1-55899-232-4

Volume 334— Gas-Phase and Surface Chemistry in Electronic Materials Processing,T.J. Mountziaris, P.R. Westmoreland, F.TJ. Smith, G.R. Paz-Pujalt, 1994,ISBN: 1-55899-233-2

Volume 335—Metal-Organic Chemical Vapor Deposition of Electronic Ceramics, S.B. Desu,D.B. Beach, B.W. Wessels, S. Gokoglu, 1994,ISBN: 1-55899-234-0

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society






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