mcgraw-hill 5-1 © 2013 the mcgraw-hill companies, inc. all rights reserved. electronics principles...
TRANSCRIPT
![Page 1: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors](https://reader036.vdocument.in/reader036/viewer/2022062322/5697bf7b1a28abf838c83a08/html5/thumbnails/1.jpg)
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ElectronicsElectronics
Principles & ApplicationsPrinciples & ApplicationsEighth EditionEighth Edition
Chapter 5Transistors
(student version)
Charles A. Schuler
©2013
5-1
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• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types• Transistors as Switches
INTRODUCTION
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Dear Student:
This presentation is arranged in segments. Each segmentis preceded by a Concept Preview slide and is followed by aConcept Review slide. When you reach a Concept Reviewslide, you can return to the beginning of that segment byclicking on the Repeat Segment button. This will allow youto view that segment again, if you want to.
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Concept Preview• Amplifiers provide gain (the output is larger than
the input).• Transistors have gain.• Transistors have a collector, a base, and an
emitter.• The C-B junction is reverse biased.• The B-E junction is forward biased.• Most of the emitter carriers reach the collector.• The base current is relatively small but controls
the larger currents.
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Amplifier Out
InGain =
In
Out
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N
P
N
NPN Transistor Structure
The collector is lightly doped. C
The base is thin and is lightly doped.
B
The emitter is heavily doped. E
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The C-B junction is reverse biased.
N
P
N
NPN Transistor Bias
C
B
E
No current flows.
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The B-E junction is forward biased.
N
P
N
NPN Transistor Bias
C
B
E
Current flows.
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When both junctionsare biased....
N
P
N
NPN Transistor Bias
C
B
E
Current flowseverywhere.
Most of the emitter carriersdiffuse through the thin base
region since they are attractedby the collector.
Note that IB is smallerthan IE or IC.
IC
IB
IE
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N
P
N C
B
E
Although IB is smallerit controls IE and IC.
IC
IB
IE
Note: when the switch opens, all
currents go to zero.
Gain is something smallcontrolling something large
(IB is small).
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Transistor structure and bias quiz
The heaviest doping is found in the___________ region. emitter
The thinnest of all three regions is calledthe ____________. base
The collector-base junction is ___________biased. reverse
The base-emitter junction is ____________biased. forward
The majority of the emitter carriers flow tothe ___________. collector
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Concept Review• Amplifiers provide gain (the output is larger than
the input).• Transistors have gain.• Transistors have a collector, a base, and an
emitter.• The C-B junction is reverse biased.• The B-E junction is forward biased.• Most of the emitter carriers reach the collector.• The base current is relatively small but controls
the larger currents.
Repeat Segment
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Concept Preview• The base to collector gain is called (beta).• To find divide the collector current by the base
current.• The emitter current is the largest since it is the
sum of the base and collector currents.• PNP transistors have opposite polarity from NPN
transistors.• In an NPN transistor, the major flow is made up of
electrons.• In a PNP transistor, the major flow is made up of
holes.
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N
P
C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
= IC
IB
The current gain frombase to collector
is called
99 mA
1 mA= 99
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N
P
C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
IE = IB + IC
99 mA= 1 mA +
= 100 mA
Kirchhoff’scurrent law:
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C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
In a PNP transistor,holes flow from
emitter to collector.
Notice the PNPbias voltages.
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Transistor currents quiz
is the ratio of collector current to ______current. base
The sum of the base and collector currentsis the __________ current. emitter
In NPN transistors, the flow from emitter tocollector is composed of _______. electrons
In PNP transistors, the flow from emitter tocollector is composed of _______. holes
Both NPN and PNP transistors show__________ gain. current
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Concept Review• The base to collector gain is called (beta).• To find divide the collector current by the base
current.• The emitter current is the largest since it is the
sum of the base and collector currents.• PNP transistors have opposite polarity from NPN
transistors.• In an NPN transistor, the major flow is made up of
electrons.• In a PNP transistor, the major flow is made up of
holes.
Repeat Segment
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Concept Preview• The NPN schematic symbol shows the emitter
arrow as Not Pointing iN.• The collector curves are a graph of collector
voltage versus collector current.• Both dc beta (dc) and ac beta (ac) can be
determined from the collector curves.• The collector circuit of a transistor can be modeled
as a resistor, as a closed switch or as an open switch.
• The amount of base current determines which of the three models applies.
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Emitter
NPN schematic symbol
Base
Collector
Memory aid: NPNmeans Not Pointing iN.
EBC
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Collector
Base
Emitter
PNP schematic symbol
EBC
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IB
IC
VCE
B
C
E
This circuit is used tocollect IC versus
VCE data forseveral values of IB.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
When graphed, the data provide anNPN collector family of curves.
20 A
0 A
100 A
80 A
60 A
40 A
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
= IC
IB
= 15040 A
6 mA
100 A
14 mA= 140 This type of gain
is called dc or hFE.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
ac = Another type of gainis called ac or hfe.
IC
IB
= 12520 A
2.5 mA
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IBWith these values of IB:
The C-E model is a resistor.
C
E
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IB When IB >> 100 A
VCE 0
The model is a closed switch.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IB When IB = 0
IC = 0
The model is an open switch.
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Transistor operating conditions quiz
When IB is large and VCE 0, the transistoracts as a ___________ switch. closed
When IB = 0 and IC = 0, the transistoracts as an ___________ switch. open
When IB > 0 and VCE > 0, the transistoracts as a ___________. resistor
Two current gain measures are dc and__________. ac
The symbol hfe is the same as _________.ac
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Concept Review• The NPN schematic symbol shows the emitter
arrow as Not Pointing iN.• The collector curves are a graph of collector
voltage versus collector current.• Both dc beta (dc) and ac beta (ac) can be
determined from the collector curves.• The collector circuit of a transistor can be modeled
as a resistor, as a closed switch or as an open switch.
• The amount of base current determines which of the three models applies.
Repeat Segment
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Concept Preview• It is possible to test transistors out-of-circuit using
an ohmmeter.• The E-B and C-B junctions act as diodes during
ohmmeter testing.• The C-E test shows a high resistance because two
junctions are involved; one of which is reverse biased by the ohmmeter.
• Gain can be verified by using a resistor in conjunction with the ohmmeter test.
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0
The E-B junction is forward biased by the ohmmeter.
V
mA
NPN
E
BC
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0
The C-E resistance is very high.
V
mA
NPN
E
BC
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0
The meter reading is < 100 kdue to gain.
V
mA
NPN
E
BC
100 k
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Concept Review• It is possible to test transistors out-of-circuit using
an ohmmeter.• The E-B and C-B junctions act as diodes during
ohmmeter testing.• The C-E test shows a high resistance because two
junctions are involved; one of which is reverse biased by the ohmmeter.
• Gain can be verified by using a resistor in conjunction with the ohmmeter test.
Repeat Segment
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Concept Preview• Bipolar junction transistors (BJTs) are controlled by base
current.• Junction field effect transistors (JFETs) are controlled by
gate voltage.• JFETs operate in the depletion mode (as normally on
devices).• Metal oxide semiconductor field effect transistors
(MOSFETs) usually operate in the enhancement mode (as normally off devices).
• Insulated gate bipolar transistors (IGBTs) are modified MOSFETs and have very low on-resistance.
• Unijunction transistors (UJTs) are not used as amplifiers.
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Current OutCurrent In CurrentAmplifier
The BJT iscurrent
controlled.
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Transistors
BJTs FETs
JFETs MOSFETs
NPN PNP
Depletion Mode Depletion Mode Enhancement Mode
N-Channel N-Channel N-ChannelP-Channel P-Channel P-Channel
D D D D D D
GGGGGG
S S S S S S
CC
E E
BB
BJTs are current controlled and FETs are voltage controlled.
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Current OutVoltage In VoltageAmplifier
The JFET isa voltage
controlledamplifier.
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DrainSource
Drain
Source
Gate
Gate
Structure of anN-channel JFET
P-type substrate
P
N-channel
The channel has carriers so it conducts from source to drain.
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DrainSource
Drain
Source
Gate
Gate
P
N-channel
P-type substrate
A negative gate voltagecan push the carriers from
the channel and turn the JFET off.
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0VDS in Volts
ID in mA
-4 V
-5 V
0 V
-1 V
-2 V
-3 VVGS
N-channel JFET drain family of characteristic curves
This is known as a depletion-mode device.
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n
Source
Gate
Drain
VDD
p
n
It’s possible to make enhancementtype field effect transistors as well.
G
S
D
VGG
Gate bias enhances the channel and turns the device on.
Metaloxide
insulator
N-channelMOSFET
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0VDS in Volts
ID in mA
1 V
0 V
5 V
4 V
3 V
2 VVGS
Enhancement mode MOSFET drain family of characteristic curves
Drain
Source
Gate
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The IGBT (insulated gate bipolar transistor)
Operation and structuresimilar to a MOSFET
Voltage controlled(like the MOSFET)
Has one more junctionthan a MOSFET
Hole injection reducesthe collector resistance
Faster turn off thanBJTs but not as fast
as MOSFETS
RCE = 8.33 m
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Courtesy of Powerex, Inc.
Three major power device technologies
hole injection
Extrajunction
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Typical IGBT driver circuit
IGBT
Typically +15 V for turn on
Typically - 5 to -15 V for turn off
Control signal
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Powerex IGBT module structure
Powerex high voltage IGBT package
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Base 2
Base 1
Emitter
The unijunction transistor fires when its emitter voltage reaches VP.
VP
Emitter current
Em
itte
r vo
ltag
e
Then, the emitter voltagedrops due to its negativeresistance characteristic.
The UJT is not useful as an amplifier.It is used in timing and control applications.
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Other transistor types quiz
BJTs are __________ -controlledamplifiers. current
FETs are __________ -controlledamplifiers. voltage
JFETs operate in the _________ mode.depletion
MOSFETs operate in the __________mode. enhancement
UJTs are not useful as __________.amplifiers
IGBTs are __________ -controlledamplifiers. voltage
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Concept Review• Bipolar junction transistors (BJTs) are controlled by base
current.• Junction field effect transistors (JFETs) are controlled by
gate voltage.• JFETs operate in the depletion mode (as normally on
devices).• Metal oxide semiconductor field effect transistors
(MOSFETs) usually operate in the enhancement mode (as normally off devices).
• Insulated gate bipolar transistors (IGBTs) are modified MOSFETs and have very low on-resistance.
• Unijunction transistors (UJTs) are not used as amplifiers.
Repeat Segment
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Concept Preview• BJTs can be used as switches.• No base current = switch is off.• High base current = switch is on.• The dissipation is always zero in an ideal switch:
off = no current flow and on = no voltage drop.• MOSFETs can also be used as switches: no gate
voltage = switch is off and high gate voltage = switch is on.
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How do transistor switches work?How do transistor switches work?Can be viewed as solid state relays:they are either ON or they are OFF.
BJT switches are characterized by:
high base current (or no base current)
low resistance from collector to emitter(or very high resistance)
low collector dissipationPC = VCE x IC
PC = 0 x IC = 0 W(or PC = VCE x 0 = 0 W)
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LOADLOADLOAD
DRIVER
The driver output is zero volts, IB = 0 and ILOAD = 0The driver output is positive, IB > 0 and the load is onThe driver output is zero volts, IB = 0 and the load is off
RCE RCE 0RCE
NPN SWITCH
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LOAD
DRIVER
The driver output is off (high Z): the resistorpulls the base voltage up so that VBE = 0
PNP SWITCH
The driver output goes low: the voltage dropacross the resistor makes VBE negative
The driver output is off (high Z): the resistorpulls the base voltage up so that VBE = 0
LOADLOAD
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PNP SWITCH WITH NPN DRIVER
LOADLOADLOAD
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NPN SWITCH WITH PNP DRIVER(NEGATIVE POWER SUPPLY)
LOADLOADLOADVBE -0.7 V
VBE +0.7 V
VBE 0 V
VBE 0 V
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A
B
C
D
A B C D
STEPPER MOTOR
Enhancement modepower MOSFETsused as switches
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LOADLOADLOAD
DRIVER
This circuit is oftenused when the driver
amplitude is notgreat enough to
saturate the MOSFET.
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The next slide shows a different type of transistor switch. It does not have a digital output; it has an analog input and output. It does have a digital input for controlling on and off. Thus, these switches can be used to connect or disconnect analog signals. Some are bidirectional left to right or right to left.
Digital on/off input
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© 2013 The McGraw-Hill Companies, Inc. All rights reserved.The signal source is a sine wave.
The output is switched on and off
by the control.
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When the control input (pin 6) is at logic 0, the input signal applied to the COM terminal (pin 1) is routed to the NC (normally closed) terminal (pin 2) and when the control input is logic 1, the input signal is connected to the NO (normally open) terminal (pin 8). The MAX4649 integrated circuit acts as a static (no moving parts) SPDT (single-pole-double-throw) relay. It is an example of a mixed-signal integrated circuit. Mixed signal ICs have both digital and analog features and are covered in more detail in subsequent chapters.
Control input (logic 0 or 1)
Input signal
Output signal
Output signal
The MAX4649 is an integrated
circuit (IC) analog switch.
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Concept Review• BJTs can be used as switches.• No base current = switch is off.• High base current = switch is on.• The dissipation is always zero in an ideal switch:
off = no current flow and on = no voltage drop.• MOSFETs can also be used as switches: no gate
voltage = switch is off and high gate voltage = switch is on.
Repeat Segment
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REVIEW
• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types• Transistors as Switches