new progress and functionalities in pwmat

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New progress and functionalities in PWmat 2019.12.27 [email protected]

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New progress and functionalities in PWmat

2019.12.27

[email protected]

Topics

Accuracy, speed and size

More complete function combination

Electrochemical methods

Nonadiabatic dynamic methods

Charge transfer and electron-phonon coupling

Charge patching method

FSM + Escan

GW methods

U calculation in LDA+U

Machine learning

Modules

Accuracy The new HSE can converge to very high accuracy

Very accurate results

Very accurate results

Accuracy

Phonon spectrum: Cu2ZnSnO4, both using HSE for phonon calculation

Same phonon spectrum using HSE

SOC band structure. CdSe, comparing PWmat with QE

Accuracy

water splitting, formation energies and phonon energies

VASP PWmat

Accuracy

cell relaxation (need larger Ecut, or stress correction procedure)

System Code Psp Ecut(eV) XC U(Ni) Kpoints a b c

LiNiO2

PWmat SG15 952 LDA+U

2.6eV

8 4 2

2.84 5.95 10.24

VASP PAW 520 2.81 5.91 10.24

Accuracy

Size and Speed

(4) Optimize the GPU memory usage.

For PBE, LDA calculation, can calculate system > 2000 atoms!

体系 截断能 K point xc SCF time

Si512 50Ry Gamma HSE 1.6 Hour

Si2016 30Ry Gamma PBE 13 Hour

All on one Mstation!

Iteration steps

Convergence error

Rho_error

V_error

30Ry Ecut, 6-13 hours for SCF convergence on one Mstation

Size and Speed

2016 Si atoms, 8064 electron

Biological systems (protein pocket with

a drug molecule).

Large supercell ! (a lot of empty space).

Another example for biological system ( 1640 atoms)

One Mstation (4 GPU)

Size and Speed

similar to atomic orbital codes for large systems!

Size and Speed

Size and speed for a Mcluster (48 GPUs)

Size and Speed

Size and speed for a Mcluster (48 GPUs)

Size and Speed

Relax convergence

We have improved the convergence, and identify the parameters:

193个原子,927个电子的复杂体系

这个结构用CG的方法很难收敛,这里我们采用PCG的方法进行结构优化

体系在第71个离子步达到收敛标准,用时5541秒

(1) Ecut2=4Ecut; (2) Larger Rcut (especially for LDA+U); (3) higher SCF convergence

More complete function combination

HSE

LDA+U

HSE

SOC

LDA+U

SOC

HSE

SOC

LDA+U

Yes Yes Yes Yes

Note: no stress for spin=22 and spin=222;

no force for LDA+U when spin=22 or 222;

SPIN XCFUNCTIONAL PRECISION PSEUDOPOTETIAL

SOC 22,222 LDA,PBE,HSE SINGLE,DOUBLE NCPP

LDA+U 1,2,222 LDA,PBE,HSE SINGLE,DOUBLE NCPP

Electrochemical methods

Implicit solvent model

New approach for over

potential calculations

Electrochemical methods

Module for Pourbaix

diagram calculations

Electrochemical methods

Grand canonical

Fixed electrode potential

Calculations.

Poisson Boltzmann Eq.

For the solvent model.

Fix Fermi energy SCF.

Energy Correction term.

Nonadiabatic MD (NAMD)

A density matrix based new formalism for NAMD,

Including: coherence decay time and detail balance

NAMD is done as a post process after a AIMD

rt-TDDFT with Boltzmann factor

A mean field treatment to restore detailed balance

can treat problems like hot carrier cooling

occupied

states

Time (fs)

Orb

ita

l e

ne

rgy (

eV

)

Charge transfer calculations

(b) Model-II

(a) Model-I

0.6nm

1.2nmSi HfO2

SiO2-1

3

211

21

2

1

2

3

Si/SiO2-1 SiO2/HfO2-2

HfO2-1

(c) Model-III: Amorphous

0.6nmSpecial module for charge transfer calc.

Realistic amorphous oxide model

HSE, yield accurate band alignment

Marcus theory for transfer transfer

Besides:

New formalism for multi-phonon process

Procedure to correct anharmonic effect

Charge patching method

Easier to use charge motif generation procedure

More flexible ways to generate the motifs

Adjustable tolerance

CPM is an extremely powerful method to study nanosystems with >10,000 atoms

Can be used to study:

(1) Moire’s pattern

(2) Defect level

(3) Charge transfer

(4) Nanostructures

(5) Amorphous system

(6) For >10,000 atom systems

Charge patching method

CPM accuracy example: Moire’s pattern (graphene + h-BN)

CPM DFT

State 884

Eigen energy Difference: 7.5 meV

Automatic generate many motifs

Charge patching method

Example: using CPM to

study defect level coupling

in 2D material, and the hopping

Transport.

(user provided example)

FSM and Escan (20,000 atoms!)

This follows the CPM, to calculate the electronic structure

Defect level energy and wave function, using CPM Hamiltonian

21,952 Si atoms. One Mstation, 10 hours

GW calculations: YAMBO

Yes, we can do GW calculations using YAMBO

Easy step by step procedure (module) for how to calculate YAMBO with Pwmat

Easy to install (run script) on Mstation

Using the linear respond and Koopmans’ approach to calculate U

A module to calculate U in LDA+U

A new section in atom.config

DeepMD + PWmat

Machine Learning

PWmat

Han Wang, Lin Feng Zhang, et al, Computer Physics Communications,228(2018)

Machine Learning

We are developing new ML-FF based on energy decomposition

Crystal growth MD simulation using ML-FF (1088 atom cell)

PWmat Modules One major area of growth for Pwmat

Each module is one recipe for a class of physics problem calculations