rad-tolerant class v, wideband operational amplifier (rev. a

1FEATURES DESCRIPTION/ORDERING INFORMATION

APPLICATIONS

DIFFERENTIAL ADC DRIVE

From

50

Source

W

THS4304-SP

SGDS038A–SEPTEMBER 2007–REVISED OCTOBER 2007www.ti.com

RAD-TOLERANT CLASS V, WIDEBAND OPERATIONAL AMPLIFIER

• Wide Bandwidth: 1 GHz The THS4304 is a wideband, voltage-feedbackoperational amplifier designed for use in high-speed• Minimum Gain of 2 V/V (6 dB)analog signal processing chains operating with a• High Slew Rate: 800 V/μssingle 5 V power supply. Developed in the BiCom3

• Low Voltage Noise: 2.4 nV/√Hz silicon germanium process technology, the THS4304• Single Supply: 5 V, 3 V offers best-in-class performance using a single 5 V

supply as opposed to previous generations of• Quiescent Current: 18 mAoperational amplifiers requiring ±5 V supplies.

• Rad-Tolerant: 150 kRad (Si) TIDThe THS4304 is a traditional voltage-feedback• QML-V Qualified, SMD 5962-07219topology that provides the following benefits:balanced inputs, low offset voltage and offset current,low offset drift, high common mode and power supply

• Active Filter rejection ratio.• ADC Driver The THS4304 is offered in 10-pin ceramic flatpack• Ultrasound (U) and is specified over the full military temperature• Gamma Camera range, –55°C to 125°C.• RF/Telecom

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright © 2007, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

http://focus.ti.com/docs/prod/folders/print/ths4304-sp.html

www.ti.com

5 6

7

8

9

10

VS–

DISSIPATION RATINGS

ABSOLUTE MAXIMUM RATINGS (1)

THS4304-SP

SGDS038A–SEPTEMBER 2007–REVISED OCTOBER 2007

These devices have limited built in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.

U PACKAGETOP VIEW

NC – No internal connection

ORDERING INFORMATION (1)

TRANSPORT MEDIA,PACKAGED DEVICES PACKAGE TYPE (2) PACKAGE MARKINGS QUANTITY5962-0721901VHA Ceramic Flatpack 0721901VHA Tubes, 25

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com.

(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.

POWER RATING (1)θJC θJAPACKAGE (°C/W) (°C/W) TA ≤ 25°C TA = 85°C TA = 125°CU (10) 14.7 189 661 mW 344 mW 132 mW

(1) Power rating determined for a maximum junction temperature of 150°C. However, distortion starts to substantially increase above125°C. Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performanceand long-term reliability.

over operating free-air temperature range (unless otherwise noted)

UNITVS Supply voltage +6.0 VVI Input voltage ±VS

IO Output current 150 mAVID Differential input voltage ±2 V

Continuous power dissipation See Dissipation Rating TableTJ Maximum junction temperature, any condition (2) 150°CTstg Storage temperature range –65°C to 150°C

HBM 1600 VESD Ratings CDM 1000 V

MM 100 V

(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings maycause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These arestress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature mayresult in reduced reliability and/or lifetime of the device.

2 Copyright © 2007, Texas Instruments Incorporated

Product Folder Link(s): THS4304-SP


http://www.ti.com

www.ti.com/packaging


www.ti.com

RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS (Unchanged after 150 kRad)

THS4304-SP


over operating free-air temperature range (unless otherwise noted)

MIN MAX UNITDual supply ±1.35 ±2.5

Supply voltage, (VS+ and VS–) VSingle supply 2.7 5

Input common-mode voltage range VS– – 0.2 VS+ + 0.2 V

Specifications: VS = 5 V: RF = 249 Ω, RL = 100 Ω, and G = +3 unless otherwise noted

TYP OVER TEMPERATUREPARAMETER CONDITIONS –55°C to MIN/25°C 25°C UNITS125°C MAX

AC PERFORMANCEG = +2, VO = 100 mVpp 1 GHz Typ

Small-Signal Bandwidth G = +3, VO = 100 mVpp 800 MHz TypG = +5, VO = 100 mVpp 220 MHz Typ

Gain Bandwidth Product G > +5 1 GHz TypG= +3, VO = 100 mVpp,0.1 dB Flat Bandwidth 100 MHz TypCF = 0 pF

Large-Signal Bandwidth G = +3, VO = 2 VPP 290 MHz TypSlew Rate G = +3, VO = 2-V Step 800 V/μs TypSettling Time to 1% G = +3, VO = 2-V Step 11 ns TypRise/Fall Times G = +3, VO = 2-V Step 2.5 ns TypHarmonic Distortion

RL= 100 Ω –67 dBc TypSecond HarmonicG = +3,Distortion RL = 1 kΩ –85 dBc TypVO = 2 VPP,

RL = 100 Ω –100 dBc Typf = 10 MHzThird Harmonic DistortionRL = 1 kΩ –85 dBc Typ

Third-Order Intermodulation –80 dBc TypG = +3, VO= 2-VPP envelope,Distortion (IMD3)200 kHz tone spacing,

Third-Order Output Intercept f = 20 MHz 41 dBm Typ(OIP3)Noise Figure G = +2, f = 1 GHz 15 dB TypInput Voltage Noise f = 1 MHz 2.4 nV/√Hz TypInput Current Noise f = 1 MHz 2.1 pA/√Hz Typ

Copyright © 2007, Texas Instruments Incorporated 3




www.ti.com


THS4304-SP


Specifications: VS = ±2.5 V, VCM = 0 V, RL = 500 Ω unless otherwise noted

TYP OVER TEMPERATUREPARAMETER CONDITIONS –55°C to MIN/25°C 25°C UNITS125°C MAX

DC PERFORMANCEOpen-Loop Voltage Gain VO = ±0.8 V 58 54 49 dB Min(AOL)Input Offset Voltage 0.5 4 6 mV Max

Input Offset Voltage Drift 5 μV/°C TypInput Bias Current 7 12 20 μA Max

VO = 0 VInput Bias Current Drift 50 nA/°C Typ

Input Offset Current 0.5 1 1.5 μA MaxInput Offset Current Drift 10 nA/°C Typ

INPUT CHARACTERISTICSCommon-Mode Input Range ±2.7 ±2.3 ±2 V MinCommon-Mode Rejection VO = 0 V, VCM = ±1 V 86 78 52 dB MinRatioInput Resistance 100 kΩ Typ

Each input, referenced to GNDInput Capacitance 1.5 pF TypOUTPUT CHARACTERISTICS

RL = 100 Ω ±1.4 ±1.3 ±1.15Output Voltage Swing V Min

RL = 1 kΩ ±1.5 ±1.4 ±1.25Output Current (Sourcing) RL = 10 Ω 98 80 70 mA MinOutput Current (Sinking) RL = 10 Ω 95 70 55 mA MinOutput Impedance f = 100 kHz 0.016 Ω TypPOWER SUPPLYMaximum Operating Voltage ±2.5 ±2.75 ±2.75 Max

VMinimum Operating Voltage ±2.5 ±1.35 ±1.35 MinMaximum Quiescent Current IO = 0 mA 18 18.9 19.7 mA MaxMinimum Quiescent Current IO = 0 mA 18 17.5 16.0 mA MinPower Supply Rejection VS+ = 3 V to 2 V, VS– = –2.5 V 78 72 64 dB Min(+PSRR)Power Supply Rejection VS+ = 2.5 V, VS– = –2 V to –3 V 60 57 53 dB Min(–PSRR)





www.ti.com


THS4304-SP


Specifications: VS = 3 V: RF = 249 Ω, RL = 500 Ω, and G = +3 unless otherwise noted

TYP OVER TEMPERATUREPARAMETER CONDITIONS MIN/25°C 25°C –55°C to 125°C UNITS MAX

AC PERFORMANCEG = +2, VO = 100 mVpp 1 GHz Typ

Small-Signal BandwidthG = +5, VO = 100 mVpp 230 MHz Typ

Gain Bandwidth Product G > +5 1 GHz TypSlew Rate G = +3, VO = 1-V Step 675 V/μs TypRise/Fall Times G = +3, VO = 0.5-V Step 1.5 ns TypHARMONIC DISTORTION

Second Harmonic Distortion G = +3, –82 dBc TypVO = 0.5 VPP, RL = 499 Ω –82 dBcThird Harmonic Distortion Typf = 10 MHz

Noise Figure G = +2, f = 1 GHz 15 dB TypInput Voltage Noise f = 1 MHz 2.4 nV/√Hz TypInput Current Noise f = 1 MHz 2.1 pA/√Hz Typ





www.ti.com


THS4304-SP


Specifications: VS = ±1.5 V, VCM = 0 V, RL = 500 Ω unless otherwise noted

TYP OVER TEMPERATUREPARAMETER CONDITIONS MIN/25°C 25°C –55°C to 125°C UNITS MAX

DC PERFORMANCEOpen-Loop Voltage Gain (AOL) VO = ±0.3 V 57 52 50 dB MinInput Offset Voltage 1 4 6 mV Max

Input Offset Voltage Drift 5 μV/°C TypInput Bias Current 6 12 20 μA Max

VO = 0 VInput Bias Current Drift 50 nA/°C Typ

Input Offset Current 0.4 1 1.5 μA MaxInput Offset Current Drift 10 nA/°C Typ

INPUT CHARACTERISTICSCommon-Mode Input Range ±1.7 ±1.3 ±1 V MinCommon-Mode Rejection VO = 0 V, VCM = ±0.3 V 68 62 50 dB MinRatioInput Resistance 100 kΩ Typ

Each input, referenced to GNDInput Capacitance 1.5 pF TypOUTPUT CHARACTERISTIC

RL = 100 Ω ±0.4 ±0.3 ±0.2Output Voltage Swing V Min

RL = 1 kΩ ±0.5 ±0.4 ±0.3Output Current (Sourcing) RL = 10 Ω 30 25 20 mA MinOutput Current (Sinking) RL = 10 Ω 32 27 21 mA MinOutput Impedance f = 100 kHz 0.016 Ω TypPOWER SUPPLYMaximum Operating Voltage ±1.5 ±2.75 ±2.75 Max

VMinimum Operating Voltage ±1.5 ±1.35 ±1.35 MinMaximum Quiescent Current IO = 0 mA 17.2 17.9 18.6 mA MaxMinimum Quiescent Current IO = 0 mA 17.2 16.5 15.0 mA MinPower Supply Rejection VS+ = 1.8 V to 1.2 V, VS– = –1.5 V 80 60 53 dB Min(+PSRR)Power Supply Rejection VS+ = 1.5 V, VS– = –1.2 V to –1.8 V 60 55 52 dB Min(–PSRR)





www.ti.com

TYPICAL CHARACTERISTICS

THS4304-SP


Table of GraphsFIGURE

5 VFrequency Response 1 through 3, 5, 60.1 dB Flatness 4S-Parameters vs Frequency 72nd Harmonic Distortion vs Frequency 8, 103rd Harmonic Distortion vs Frequency 9, 11Harmonic Distortion vs Output voltage 12

IMD3 3rd Order Intermodulation Distortion vs Frequency 13OIP3 3rd Order Output Intercept Point vs Frequency 14SR Slew Rate vs Output voltage 15Vn/In Noise vs Frequency 16

Noise Figure vs Frequency 17Iq Quiescent Current vs Supply voltage 18

Rejection Ratio vs Frequency 19VO Output Voltage vs Load resistance 20VOS Input Offset Voltage vs Input common-mode voltage 21IIB/IIO Input Bias and Offset Current vs Case temperature 22VOS Input Offset Voltage vs Case temperature 23VO Small-signal Transient Response 24VO Large-signal Transient Response 25VO Settling Time 26VO Overdrive Recovery Time 273 V

Frequency Response 28 through 30Harmonic Distortion vs Frequency 31Harmonic Distortion vs Output voltage 32

SR Slew Rate vs Output voltage 33VO Output Voltage vs Load resistance 34IIB/IIO Input Bias and Offset Current vs Case temperature 35VOS Input Offset Voltage vs Case temperature 36





www.ti.com

TYPICAL CHARACTERISTICS (5 V)

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–

f Frequency Hz– –

G = 3

G = 5

G = 2

V = 100 mV ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

1 M 10 M 100 M 1 G 10 G

Sig

nal G

ain

dB

–


C = 0.5 pFF

C = 0 pFF

C = 1 pFF

Gain = 2,V = 100 mV ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–

V = 100 mVO P-P


V = 1 VO P-P

V = 2 VO P-P

Gain = 2,

R = 249 ,

R = 100 ,

V = 5 V

F

L

S

W

W

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–


G = 5

G = 3

G = 2

V = 1 V ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

1 M 10 M 100 M 1 G

Sig

na

l G

ain

dB

–


Gain = 3,V = 100 mV ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–


G = 5

G = 3

G = 2V = 2 V ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

2n

d-H

arm

on

ic D

isto

rtio

nd

Bc

–

f Frequency MHz– –

R = 100L

R = 1 KL

Gain = 3,V = 2 V ,

R = 249 ,

V = 5 V

O pp

F

S

W

3rd

-Ha

rmo

nic

Dis

tort

ion

dB

c–


R = 100L

R = 1 KL

Gain = 3,V = 2 V ,

R = 249 ,

V = 5 V

O pp

F

S

W

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–


S21S22

S11S12

Gain = 3,V = 100 mV ,

R = 249 ,

R = 100 ,

V = 5 V

O pp

F

L

S

W

W

THS4304-SP


FREQUENCY RESPONSE FREQUENCY RESPONSE FREQUENCY RESPONSE

Figure 1. Figure 2. Figure 3.

0.1 dB FLATNESS FREQUENCY RESPONSE FREQUENCY RESPONSE


S-PARAMETERS 2nd-HARMONIC DISTORTION 3rd-HARMONIC DISTORTIONvs vs vs

FREQUENCY FREQUENCY FREQUENCY






www.ti.com


R = 100L

R = 1 KL

2n

d-H

arm

on

ic D

isto

rtio

nd

Bc

–

Gain = 3,V = 1 V ,

R = 249 ,

V = 5 V

O pp

F

S

W

3rd

-Ha

rmo

nic

Dis

tort

ion

dB

c–


Gain = 3,V = 1 V ,

R = 249 ,

V = 5 V

O pp

F

S

W

R = 100L

R = 1 KL

Ha

rmo

nic

Dis

tort

ion

dB

c–

HD2

Output Voltage V– pp

HD3

Gain = 3,

R = 249 ,

R = 100 ,

V = 5 V

f = 10 MHz

F

L

S

W

W

V = 1 V

envelopeO PP

IMD

dB

c3

–

f Frequency M z– – H

V = 2 V

envelopeO PP

Gain = 3,

R = 249 ,

R = 100 ,

200 kHz spacing,V = 5 V

F

L

S

Ω

Ω

400

450

500

550

600

650

700

750

800

850

900

0 0.5 1 1.5 2 2.5 3

Gain = 2,RF = 249 Ω,RL = 100 Ω,VS = 5 V

SR

− S

lew

Rat

e −

V/

VO − Output V oltage −V PP

sµ

Rise

Fall

OIP

dB

c3

–


V = 1 V

envelopeO PP

V = 2 V

envelopeO PP

V = 5 VS

Gain = 3,

R = 249 ,

R = 100 ,

200 kHz spacing

F

L

W

W

1

10

100

1000

10 100 1 k 10 k 100 k 1 M 10 M

f − Frequency − Hz

nV/

Hz

− Vo

ltage

Noi

se −

Vn

I n−

Cur

rent

Noi

se −

pA/

Hz

Vn

In

0

2

4

6

8

10

12

14

16

18

20

10 M 500 M 1 G

Noi

se F

igur

e −

dB


Gain = 2,RF = 249 Ω,RG = 249 Ω,RL = 100 Ω,VS = 5 V

0

2

4

6

8

10

12

14

16

18

20

22

2 2.5 3 3.5 4 4.5 5

I−

Qui

esce

nt C

urre

nt −

mA

VS − Supply V oltage − V

TA = 85°C

TA = -40°C

TA = 25°C

q

TA = -55°C

TA = 125°C

THS4304-SP


TYPICAL CHARACTERISTICS (5 V) (continued)

2nd-HARMONIC DISTORTION 3rd-HARMONIC DISTORTION HARMONIC DISTORTIONvs vs vs

FREQUENCY FREQUENCY OUTPUT VOLTAGE


3rd-ORDER INTERMODULATION 3rd-ORDER OUTPUT INTERCEPTDISTORTION POINT SLEW RATE

vs vs vsFREQUENCY FREQUENCY OUTPUT VOLTAGE


NOISE NOISE FIGURE QUIESCENT CURRENTvs vs vs

FREQUENCY FREQUENCY SUPPLY VOLTAGE






www.ti.com

1

1.5

2

2.5

3

3.5

4

10 100 1000

VS = 5 V

RL − Load Resistance − Ω

− O

utpu

t Vol

tage

− V

V O

0

10

20

30

40

50

60

70

80

90

100

110

10 k 100 k 1 M 10 M 100 M 1 G


Rej

ectio

n R

atio

− d

B

CMRR

PSRR+

PSRR−

VS = 5 V

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

−1 0 1 2 3 4 5 6

− In

put O

ffset

Vol

tage

− m

VV

OS

VICR − Input Common-Mode Range − V

VS = 5 V

Input B

ias C

urr

ent

µA

–

Case Temperature °C–

Input O

ffset C

urr

ent

nA

–

IIO

IIB–

IIB

V = 5 VS

Ou

tpu

t V

olta

ge

V–

Time ns–

Inp

ut

Vo

lta

ge

V–

Input

Output

Gain = 3,

R = 249 ,

R = 100 ,

V = 5 V

F

L

S

W

W

Inp

ut O

ffset V

olta

ge

µV

–

Case Temperature °C–

V = 5 VS

Outp

ut V

oltage

V–

Time ns–

Input

Output

Input V

oltage

V–

Gain = 3,

R = 249 ,

R = 100 ,

V = 5 V

F

L

S

W

W

Ou

tpu

t V

olta

ge

%o

f F

ina

l V

alu

e–

Time ns–

Gain = 3,

R = 249 ,

R = 100 ,

V = 2 V

V = 5 V

F

L

S

W

W

O PP

Ou

tpu

t V

olta

ge

V–

Time µs–

Input

Output

Inp

ut

Vo

lta

ge

V–

Gain = 3,

R = 249 ,

R = 100 ,

V = 5 V

F

L

S

W

W

THS4304-SP


TYPICAL CHARACTERISTICS (5 V) (continued)

REJECTION RATIO OUTPUT VOLTAGE INPUT OFFSET VOLTAGEvs vs vs

FREQUENCY LOAD RESISTANCE INPUT COMMON-MODE VOLTAGE


INPUT BIAS AND OFFSETCURRENT INPUT OFFSET VOLTAGE

vs vs SMALL-SIGNALCASE TEMPERATURE CASE TEMPERATURE TRANSIENT RESPONSE


LARGE-SIGNAL OVERDRIVETRANSIENT RESPONSE SETTLING TIME RECOVERY TIME






www.ti.com

TYPICAL CHARACTERISTICS (3 V)

Sig

na

l G

ain

dB

–


1 M 10 M 100 M 1 G 10 G0

5

10

15

C = 0 pFF

C = 0.5 pFF

C = 1 pFF

Gain = 2,V = 100 mV ,

R = 249 ,

R = 499 ,

V = 3 V

O pp

F

L

S

W

W

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–


V = 100 mV ,

R = 249 ,

R = 499 ,

V = 3 V

O pp

F

L

S

W

W

0

5

10

15

G = 5

G = 2

1 M 10 M 100 M 1 G 10 G

Sig

na

l G

ain

dB

–


V = 100 mVO

V = 200 mVO

V = 500 mVO

Gain = 2,

R = 249 ,

R = 499 ,

V = 3 V

F

L

S

W

W

Ha

rmo

nic

Dis

tort

ion

dB

c–


1 10 100

-110

-100

-90

-80

-70

-60

-50

-40

Gain = 3,

R = 249 ,

R = 499 ,

V = 3 V

F

L

S

W

W

V = 500 mV ,O pp

HD2

HD3

400

450

500

550

600

650

700

750

800

850

900

0 0.1 0.2 0.3 0.4 0.5 0.6

Rise

Fall

Gain = 2,RF = 249 Ω,RL = 499 Ω,VS = 3 V

SR

− S

lew

Rat

e −

V/µ

s

VO − Output V oltage − V PP

Ha

rmo

nic

Dis

tort

ion

dB

c–

Output Voltage Vpp–

Gain = 3,

R = 249 ,

R = 499 ,

V = 3 V

F

L

S

W

W

f = 10 MHz,

HD3

HD2

T Case Temperature °C –– C

Inp

ut B

ias C

urr

en

tµ

A–

Inp

ut O

ffset C

urr

en

tn

A–

IIB+

IIB-

IIO

Vs = 3 V

0.5

0.75

1

1.25

1.5

1.75

2

2.25

10 100 1000

− O

utpu

t Vol

tage

− V

VO

RL − Load Resistance −

VS = 3 V

Inp

ut

Offse

t V

olta

ge

mV

–

T Case Temperature °C – – C

Vs = 3 V

THS4304-SP


FREQUENCY RESPONSE FREQUENCY RESPONSE FREQUENCY RESPONSE


HARMONIC DISTORTION HARMONIC DISTORTION SLEW RATEvs vs vs

FREQUENCY OUTPUT VOLTAGE OUTPUT VOLTAGE


INPUT BIAS ANDOUTPUT VOLTAGE OFFSET CURRENT INPUT OFFSET VOLTAGE

vs vs vsLOAD RESISTANCE CASE TEMPERATURE CASE TEMPERATURE






www.ti.com

APPLICATION INFORMATION

For many years, high-performance analog design has required the generation of split power supply voltages, like

SNR SignalNoise

SFDR SignalSpur

GENERAL APPLICATION

HARMONIC DISTORTION

THS4304-SP


±15 V, ±8 V, and more recently ±5 V, to realize the full performance of the amplifiers available. Modern trends inhigh-performance analog are moving toward single-supply operation at 5 V, 3 V, and lower. This reducespower-supply cost due to less voltage being generated and conserves energy in low-power applications. It alsocan take a toll on available dynamic range, a valuable commodity in analog design, if the available voltage swingof the signal also must be reduced.

Two key figures of merit for dynamic range are signal-to-noise ratio (SNR) and spurious free dynamic range(SFDR).

SNR is simply the signal level divided by the noise:

and SFDR is the signal level divided by the highest spur:

In an operational amplifier, reduced supply voltage typically results in reduced signal levels due to lower voltageavailable to operate the transistors within the amplifier. When noise and distortion remain constant, the result is acommensurate reduction in SNR and SFDR. To regain dynamic range, the process and the architecture used tomake the operational amplifier must have superior noise and distortion performance with lower power supplyoverhead required for proper transistor operation.

The THS4304 BiCom3 operational amplifier is just such a device. It is able to provide 2 Vpp signal swing at itsoutput on a single 5 V supply with noise and distortion performance similar to the best 10 V operational amplifierson the market today

The THS4304 is a traditional voltage-feedback topology with wideband performance up to 1 GHz at a gain of2 V/V. Care must be taken to ensure that parasitic elements do not erode the phase margin.

Capacitance at the output and inverting input, and resistance and inductance in the feedback path, can causeproblems.

To reduce parasitic capacitance, the ground plane should be removed from under the part. To reduce inductancein the feedback, the circuit traces should be kept as short and direct as possible.

For a gain of +2V/V, it is recommended to use a 249 Ω feedback resistor. With good layout, this should keep thefrequency response peaking to around 6 dB. This resistance is high enough to not load the output excessively,and the part is capable of driving 100 Ω load with good performance. Higher-value resistors can be used, withmore peaking. Lower-value feedback resistors also can be used to reduce peaking, but degrade the distortionperformance with heavy loads.

Power supply bypass capacitors are required for proper operation. The most critical are 0.1 μF ceramiccapacitors; these should be placed as close to the part as possible. Larger bulk capacitors can be shared withother components in the same area as the operational amplifier.

For best second harmonic (HD2), it is important to use a single-point ground between the power supply bypasscapacitors when using a split supply. It also is recommended to use a single ground or reference point for inputtermination and gain-setting resistors (R8 and R11 in the non-inverting circuit). It is recommended to follow theEVM layout closely in your application.





www.ti.com

EVALUATION MODULES

1

2

43

5

VREF

R3 R6+VS

C8 R8 C3

R7

+VS

U1

R9

C7J1 R10

R11 R1

VREF

−VS

THS4304 R2 C9 J2

C5 C1

−VSFB1 FB2

J3 J4 J6 J5

−VS +VSGND GND

+VS

TP1GND

C2 C4

R12*

C6*−VS +VS

*C6 − DGK EVM Only

*R12 − DBV EVM Only

THS4304-SP


The THS4304 has two evaluation modules (EVMs) available. One is for the MSOP (DGK) package and the otherfor the SOT-23 (DBV) package. These provide a convenient platform for evaluating the performance of the partand building various different circuits. The full schematics, board layout, and bill of materials (as supplied) for theboards are shown in the following illustrations.

Figure 37. EVM Full Schematic





www.ti.com

THS4304-SP


EVM BILL OF MATERIALSTHS4304 EVM (1)

SMD Reference PCB Manufacturer's Distributor'sItem Description Size Designator Quantity Part Number Part Number1 FB1, FB2 2 (STEWARD) (DIGI-KEY)Bead, ferrite, 3 A, 80 Ω 1206 HI1206N800R-00 240-1010-1-ND2 Capacitor, 3.3 μF, Ceramic 1206 C1, C2 2 (AVX) 1206YG335ZAT2A (GARRETT)

1206YG335ZAT2A3 Capacitor, 0.1 μF, Ceramic 0603 C4, C5 2 (AVX) 0603YC104KAT2A (GARRETT)

0603YC104KAT2A4 Open 0603 C3, C6 (2) 25 Open 0603 R1, R3, R6, 5

R9, R12 (3)

6 Resistor, 0 Ω, 1/10 W, 1% 0603 C7. C8, C9, 4 (KOA) RK73Z1JTTD (GARRETT)C10 RK73Z1JTTD

7 Resistor, 49.9 Ω, 1/10 W, 1% 0603 R2, R11 2 (KOA) RK73H1JLTD49R9F (GARRETT)RK73H1JLTD49R9F

8 Resistor, 249 Ω, 1/10 W, 1% 0603 R7, R8 2 (KOA) RK73H1JLTD2490F (GARRETT)RK73H1JLTD2490F

9 Jack, banana recepticle, 0.25 in. J3, J4, J5, J6 4 (HH SMITH) 101 (NEWARK) 35F865diameter hole

10 Test point, black TP1 1 (KEYSTONE) 5001 (DIGI-KEY) 5001K-ND11 Connector, edge, SMA PCB jack J1, J2 2 (JOHNSON) 142-0701-801 (NEWARK) 90F262412 Integrated Circuit, THS4304 U1 1 (TI) THS4304DGK, or

(TI) THS4304DBV13 Standoff, 4-40 HEX, 0.625 in. 4 (KEYSTONE) 1808 NEWARK) 89F1934

Length14 Screw, Phillips, 4-40, 0.250 in. 4 SHR-0440-016-SN15 Board, printed-circuit 1 (TI) THS4304DGK ENG A, or

(TI) THS4304DBV ENG A

(1) NOTE: All items are designated for both the DBV and DGK EVMs unless otherwise noted.(2) C6 used on DGK EVM only.(3) R12 used on DBV EVM only.





www.ti.com

THS4304-SP


Figure 38. THS4304DGK EVM Layout Top and L2 Figure 39. THS4304DGK EVM Layout Bottom and L3

Figure 40. THS4304DBV EVM Layout Top and L2 Figure 41. THS4304DBV EVM Layout Bottom and L3





www.ti.com

NON-INVERTING GAIN WITH SPLIT SUPPLY

1

2

4

3

5

C8

0

R8

249 249

R7

+VS

U1

−VS +VSFB1 FB2

−VS +VSGND GND

J3 J4 J6 J5

C50.1 F

C13.3 F

GND

TP1

C23.3 F

C40.1 F

J1 C7 R10

0 0R1149.9 −VS

THS4304DBV

R2

49.9

C9

0

J2

THS4304-SP


The following schematic shows how to configure the operational amplifier for non-inverting gain with split powersupply (±2.5V). This is how the EVM is supplied from TI. This configuration is convenient for test purposesbecause most signal generators and analyzer are designed to use ground-referenced signals by default. Notethe input and output provides 50 Ω termination.

Figure 42. Non-Inverting Gain With Split Power Supply





www.ti.com

INVERTING GAIN WITH SPLIT POWER SUPPLY

1

2

43

5

−VS +VSFB1 FB2

−VS +VSGND GND

J3 J4 J6 J5

C50.1 F

C13.3 F

GND

TP1

C23.3 F

C40.1 F

+VS

J1 C7 R9

0R1161.9

−VS

THS4304DBV

C9

0

J2

221

R1124

C80

U1R2

49.9

R7

249

51

2

43 +

−

THS4304-SP


The following schematic shows how to configure the operational amplifier for inverting gain of 1 (–1 V/V) withsplit power supply (±2.5 V). Note the input and output provides 50 Ω termination for convenient interface tocommon test equipment.

Figure 43. Inverting Gain With Split Power Supply





www.ti.com

NON-INVERTING SINGLE-SUPPLY OPERATION

1

2

43

5

+VSFB2

−VS +VSGND GND

J3 J4 J6 J5

GND

TP1

C23.3 F

C40.1 F

NC

C8 R8

249 249

R7

+VS

U1

J1 C7 R10

0 0R149.9

THS4304DBV

R2

49.9

C9

0

J2

VREF

R3

10 k 10 k

R6+VS

0.1 F

C5

VREF

3

41

5

2+

−

DIFFERENTIAL ADC DRIVE AMPLIFIER

THS4304-SP


The THS4304 EVM can easily be configured for single 5 V supply operation, as shown in the followingschematic, with no change in performance. This circuit passes dc signals at the input, so care must be taken toreference (or bias) the input signal to mid-supply.

If dc operation is not required, the amplifier can be ac coupled by inserting a capacitor in series with the input(C7) and output (C9).

Figure 44. Non-Inverting 5-V Single-Supply Amplifier

The circuit shown in Figure 44 is adapted as shown in Figure 45 to provide a high-performance differentialamplifier drive circuit for use with high-performance ADCs, like the ADS5500 (14 bit 125 MSP ADC). For testingpurposes, the circuit uses a transformer to convert the signal from a single-ended source to differential. If theinput signal source in your application is differential and biased to mid-rail, no transformer is required.

The circuit employs two amplifiers to provide a differential signal path to the ADS5500. A resistor divider (two10 kΩ resistors) is used to obtain a mid-supply reference voltage of 2.5 V (VREF) (the same as shown in thesingle-supply circuit of Figure 44). Applying this voltage to the one side of RG and to the positive input of theoperational amplifier (via the center-tap of the transformer) sets the input and output common-mode voltage ofthe operational amplifiers to mid-rail to optimize their performance. The ADS5500 requires an inputcommon-mode voltage of 1.5 V. Due to the mismatch in required common-mode voltage, the signal is ac coupledfrom the amplifier output, via the two 1 nF capacitors, to the input of the ADC. The CM voltage of the ADS5500 isused to bias the ADC input to the required voltage, via the 1 kΩ resistors. Note: 100 μA common-mode current isdrawn by the ADS5500 input stage (at 125 MSPS). This causes a 100 mV shift in the input common-modevoltage, which does not impact the performance when driving the input to –1 dB of full scale. To offset this effect,a voltage divider from the power supply can be used to derive the input common-mode voltage reference.

Because the operational amplifiers are configured as non-inverting, the inputs are high impedance. This isparticularly useful when interfacing to a high-impedance source. In this situation, the amplifiers provideimpedance matching and amplification of the signal.





www.ti.com

+5V

A IN+

A IN−

ADS 5500

RFRG

49 .9

VIN

From50

Source

1001:1

RFRG

CM

CM

0.1

THS4304

THS4304

1k

+3.3 VA +3.3 VD

D

A

0.1

+5V

10 k

VREF (= 2.5V)

VREF

VREF

VREF

1nF

1nF

+5VCM

10 k

100

1k

F

F

THS4304-SP


Figure 45. Differential ADC Drive Amplifier Circuit





PACKAGING INFORMATION

Orderable Device Status (1) PackageType

PackageDrawing

Pins PackageQty

Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

5962-0721901VHA ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part ina new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please checkhttp://www.ti.com/productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be solderedat high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHScompatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak soldertemperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it isprovided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to theaccuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limitedinformation may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF THS4304-SP :

• Catalog: THS4304

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

PACKAGE OPTION ADDENDUM

www.ti.com 15-Oct-2009

Addendum-Page 1

http://www.ti.com/productcontent

http://focus.ti.com/docs/prod/folders/print/ths4304.html

IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. Customers shouldobtain the latest relevant information before placing orders and should verify that such information is current and complete. All products aresold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standardwarranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except wheremandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products andapplications using TI components. To minimize the risks associated with customer products and applications, customers should provideadequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license from TI to use such products or services or awarranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectualproperty of the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompaniedby all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptivebusiness practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additionalrestrictions.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids allexpress and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is notresponsible or liable for any such statements.TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonablybe expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governingsuch use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, andacknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their productsand any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may beprovided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products insuch safety-critical applications.TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products arespecifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet militaryspecifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely atthe Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products aredesignated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designatedproducts in automotive applications, TI will not be responsible for any failure to meet such requirements.Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers amplifier.ti.com Audio www.ti.com/audioData Converters dataconverter.ti.com Automotive www.ti.com/automotiveDLP® Products www.dlp.com Broadband www.ti.com/broadbandDSP dsp.ti.com Digital Control www.ti.com/digitalcontrolClocks and Timers www.ti.com/clocks Medical www.ti.com/medicalInterface interface.ti.com Military www.ti.com/militaryLogic logic.ti.com Optical Networking www.ti.com/opticalnetworkPower Mgmt power.ti.com Security www.ti.com/securityMicrocontrollers microcontroller.ti.com Telephony www.ti.com/telephonyRFID www.ti-rfid.com Video & Imaging www.ti.com/videoRF/IF and ZigBee® Solutions www.ti.com/lprf Wireless www.ti.com/wireless

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2009, Texas Instruments Incorporated

http://amplifier.ti.com

http://www.ti.com/audio

http://dataconverter.ti.com

http://www.ti.com/automotive

http://www.dlp.com

http://www.ti.com/broadband

http://dsp.ti.com

http://www.ti.com/digitalcontrol

http://www.ti.com/clocks

http://www.ti.com/medical

http://interface.ti.com

http://www.ti.com/military

http://logic.ti.com

http://www.ti.com/opticalnetwork

http://power.ti.com

http://www.ti.com/security

http://microcontroller.ti.com

http://www.ti.com/telephony

http://www.ti-rfid.com

http://www.ti.com/video

http://www.ti.com/lprf

http://www.ti.com/wireless

rad-tolerant class v, wideband operational amplifier (rev. a

Documents