radiation lot acceptance testing (rlat) of 54hcxx devices for … · 2008. 4. 16. · radiation lot...

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Final Report An ISO 9001:2000 Certified Company Radiation Assured Devices 4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800 Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview and Background It is well known that ionizing radiation can cause parametric degradation and ultimately functional failure in electronic devices. The damage occurs via electron-hole pair production, transport and trapping in the dielectric regions. In advanced CMOS technology nodes (0.6μm and smaller) the bulk of the damage is manifested in the thicker isolation regions, such as shallow trench or local oxidation of silicon (LOCOS) oxides (also known as “birds-beak” oxides). Because of the preponderance of damage in the thicker oxides the initial and primary effect of ionizing radiation is to see increases in standby or input currents. For CMOS devices, where the damage is in these thicker oxide regions, a higher dose rate is considered worst-case and MIL-STD-883 TM1019.7 calls out a rate of 50 to 300rad(Si)/s as Condition A. 2.0. Radiation Test Apparatus The TID testing described in this test plan was performed using the Co-60 irradiator at Radiation Assured Devices’ Longmire Laboratories in Colorado Springs, CO. The Co-60 rods are held in the base of the irradiator heavily shielded by lead, during the irradiation the rod is raised by an electronic timer/controller and the exposure is performed in air. The dose rate for this irradiator in this configuration ranges from <10mrad(Si)/s to a maximum of approximately 65rad(Si)/s, determined by the distance from the source. For high-dose rate experiments (>50rad(Si)/s) the bias boards are placed in a radial fashion equidistant from the raised Co-60 rods. The irradiator calibration is maintained by Radiation Assured Devices Longmire Laboratories using thermoluminescent dosimeters (TLDs) traceable to the National Institute of Standards and Technology (NIST). 3.0. Radiation Test Conditions The 54HCxx devices were irradiated in a static (or quiescent) biased configuration with all of the inputs tied high (5-devices for each device type) and all of the inputs tied low (5-devices for each device type). See the “Bias Diagram” page on each individual test breakout for the details of the bias circuits). The bias circuits satisfy the requirements of MIL-STD-883G TM1019.7 Section 3.9.3 Bias and Loading Conditions . Specifically the specification states “Care shall be taken in selecting the loading such that the rise in the junction temperature is minimized.” The irradiation for each device type will be performed to a total ionizing dose of 10krad(Si) in a single step. In some cases there was a control pin that affects which data lines are inputs and which are outputs. For example the 54HC245 can have either the “A” lines as data and the “B” lines as bus or the “A” lines as bus and the “B” lines as data. For this part we have biased the OE\ and DIR pins identically for the two bias conditions, therefore keeping the part as “A” lines data and “B” lines bus for both bias conditions. The inputs, that is the “A” lines are biased high (for all inputs high condition) or low (for all inputs low condition) while the “B” bus lines are left floating (since they are configured as outputs).

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Page 1: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments

1.0. Overview and Background It is well known that ionizing radiation can cause parametric degradation and ultimately functional failure in electronic devices. The damage occurs via electron-hole pair production, transport and trapping in the dielectric regions. In advanced CMOS technology nodes (0.6μm and smaller) the bulk of the damage is manifested in the thicker isolation regions, such as shallow trench or local oxidation of silicon (LOCOS) oxides (also known as “birds-beak” oxides). Because of the preponderance of damage in the thicker oxides the initial and primary effect of ionizing radiation is to see increases in standby or input currents. For CMOS devices, where the damage is in these thicker oxide regions, a higher dose rate is considered worst-case and MIL-STD-883 TM1019.7 calls out a rate of 50 to 300rad(Si)/s as Condition A. 2.0. Radiation Test Apparatus The TID testing described in this test plan was performed using the Co-60 irradiator at Radiation Assured Devices’ Longmire Laboratories in Colorado Springs, CO. The Co-60 rods are held in the base of the irradiator heavily shielded by lead, during the irradiation the rod is raised by an electronic timer/controller and the exposure is performed in air. The dose rate for this irradiator in this configuration ranges from <10mrad(Si)/s to a maximum of approximately 65rad(Si)/s, determined by the distance from the source. For high-dose rate experiments (>50rad(Si)/s) the bias boards are placed in a radial fashion equidistant from the raised Co-60 rods. The irradiator calibration is maintained by Radiation Assured Devices Longmire Laboratories using thermoluminescent dosimeters (TLDs) traceable to the National Institute of Standards and Technology (NIST). 3.0. Radiation Test Conditions The 54HCxx devices were irradiated in a static (or quiescent) biased configuration with all of the inputs tied high (5-devices for each device type) and all of the inputs tied low (5-devices for each device type). See the “Bias Diagram” page on each individual test breakout for the details of the bias circuits). The bias circuits satisfy the requirements of MIL-STD-883G TM1019.7 Section 3.9.3 Bias and Loading Conditions. Specifically the specification states “Care shall be taken in selecting the loading such that the rise in the junction temperature is minimized.” The irradiation for each device type will be performed to a total ionizing dose of 10krad(Si) in a single step. In some cases there was a control pin that affects which data lines are inputs and which are outputs. For example the 54HC245 can have either the “A” lines as data and the “B” lines as bus or the “A” lines as bus and the “B” lines as data. For this part we have biased the OE\ and DIR pins identically for the two bias conditions, therefore keeping the part as “A” lines data and “B” lines bus for both bias conditions. The inputs, that is the “A” lines are biased high (for all inputs high condition) or low (for all inputs low condition) while the “B” bus lines are left floating (since they are configured as outputs).

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

4.0. Test Conditions and Tested Parameters All SMD Group A, Subgroup 1 parameters were tested for each of the 54HCxx devices. See the table under the “Tested Parameters and Limits” section for the individual breakout of each tested parameter and a subset of the test conditions. In this report we identify the load conditions for all tests that have more than one condition. For example, in the HC00 SMD there are a total of 5 load conditions each for Vol and Voh; three tests with a load of 20μA (VCC at 2, 4.5 and 6V), one test with a load of 4mA (VCC at 4.5) and one test with a load of 5.2mA (VCC at 6V). These different load conditions are shown in the upper right-hand portion of the “Tested Parameters and Limits” table for each individual device. The definitions for this device are: Vol1 and Voh1 represent the load condition of Ioh=20 µA and Vcc=2.0 V, Vol2 and Voh2 represent the load condition of Ioh=20 µA and Vcc=4.5 V, Vol3 and Voh3 represent the load condition of Ioh=20 µA and Vcc=6.0 V, Vol4 and Voh4 represent the load condition of Ioh=4.0 mA and Vcc=4.5 V and Vol5 and Voh5 represent the load condition of Ioh=5.2 mA and Vcc=6.0 V.

If not explicitly noted in this report, then the operation of the part and the condition of the pins during the test were biased according to the SMD. The overview page for each device lists the SMD number. The SMD can be obtained from the DSCC website at: http://www.dscc.dla.mil/programs/milspec/docsearch.asp. Note that the limits shown in each “Tested Parameters and Limits” table are the SMD limits. The following post-irradiation limits were applied for determining pass/fail criteria: Quiescent Supply Current (ICC) shall be 250µA maximum and the Tri-State Output Leakage Current (IOZL) shall be 30µA maximum. Electrical testing was performed on all ten devices plus 2 control devices within one hour of the end of each irradiation according to MIL STD 883G TM1019.7

5.0. Results Summary

The data was obtained as read and record and all the raw data plus an attributes summary for the full set of test conditions is compiled as a separate Excel file for each device type. Within the Excel file the results of the various test conditions are contained in separate worksheets. In addition to the read and record data, the full Excel file contains the complete attributes data, which is divided into two groups, one for the inputs biased high condition and the other for the inputs biased low condition. The KTL value used for the analysis is 2.742 per MIL HDBK 814 using one sided tolerance limits of 90/90 for five samples. The following criteria was used to determine whether or not the devices passed the qualification: following the radiation exposure each of the 5 pieces from the two bias conditions pass the specification value (either the SMD value or the modified limit, as noted above) and the average value for the five-piece sample must pass the specification value when the KTL limit is applied. If either of these conditions is not satisfied following the radiation exposure, then the lot will be logged as a failure.

Table 5.1 summarizes the results of the RLAT testing and lists the file name where the complete datasets can be located.

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Table 5.1. Summary of RLAT Results and File Names for Complete Datasets

Part Type RLAT Result Complete Data Set

(File Name) Comments

54HC00 PASS HC00SummarizedDataFinalRev2.xls

54HC02 PASS HC02SummarizedDataFinalRev3.xls

54HC04 PASS HC04SummarizedDataFinalRev3.xls

54HC08 PASS HC08SummarizedDataFinalRev3.xls

54HC10 PASS HC10SummarizedDataFinalRev3.xls

54HC109 PASS HC109SummarizedDataFinalRev3.xls

54HC11 PASS HC11SummarizedDataFinalRev2.xls

54HC138 PASS HC138SummarizedDataFinalRev3.xls

54HC139 PASS HC139SummarizedDataFinalRev3.xls

54HC14 PASS HC14SummarizedDataFinalRev2.xls

54HC153 PASS HC153SummarizedDataFinalRev2.xls

54HC157 PASS HC157SummarizedDataFinalRev3.xls

54HC161 PASS HC161SummarizedDataFinalRev3.xls

54HC164 PASS HC164SummarizedDataFinalRev3.xls

54HC166 PASS HC166SummarizedDataFinalRev3.xls

54HC174 PASS HC174SummarizedDataFinalRev2.xls

54HC20 PASS HC20SummarizedDataFinalRev2.xls

54HC244 PASS HC244SummarizedDataFinalRev3.xls

54HC245 FAIL HC245CurrentsSummarizedDataFinalRev3.xls HC245VoltagesSummarizedDataFinalRev3.xls

3 parts fail Iinh limit post-irradiation

54HC251 PASS HC251SummarizedDataFinalRev2.xls

54HC27 PASS HC27SummarizedDataFinalRev3.xls

54HC273 PASS HC273SummarizedDataFinalRev3.xls

54HC32 PASS HC32SummarizedDataFinalRev3.xls

54HC374 PASS HC374SummarizedDataFinalRev3.xls

54HC74 PASS HC74SummarizedDataFinalRev3.xls

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

54HC85 PASS HC85SummarizedDataFinalRev3.xls

54HC86 PASS HC86SummarizedDataFinalRev3.xls

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23657J R1.1 070608

Customer: Texas Instruments Part Type Tested: Quadruple 2-Input Positive-NAND Gates Commercial Part Number: 54HC00 SMD Part Number: 5962-8403701VCA Customer Part Number: 7150024-1 TI Part Number: MPD23657J Lot Number/Date Code: 0720A Wafer Lot Number: 7093860SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23657J (54HC00)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Output N/A N/C 11 Output N/A N/C12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC00

Inputs High

TID Static Bias Conditions forPart Number 54HC00

Inputs Low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23657J (54HC00)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A3-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 NOTES VolVoh Voh3_Y4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y1 3.98 function for VOH and VOL tests. VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 1.00E-07 Iin Iil_A2 1.00E-07 Iin Iil_A3 1.00E-07 Iin Iil_A4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_B1 1.00E-07 Iin Iil_B2 1.00E-07 Iin Iil_B3 1.00E-07 Iin Iil_B4 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC00 to Show Part Markings

Page 11: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23660J R1.1 070608

Customer: Texas Instruments Part Type Tested: Quadruple 2-Input Positive-NOR Gates Commercial Part Number: 54HC02 SMD Part Number: 5962-8404101VCA Customer Part Number: 7150024-4 TI Part Number: MPD23660J Lot Number/Date Code: 0720A Wafer Lot Number: 7094006SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23660J (54HC02)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Output N/A N/C 1 Output N/A N/C2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Output N/A N/C 4 Output N/A N/C5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 GND Jumper GND 7 GND Jumper GND8 Input 1 kOhm 5.5V 8 Input 1 kOhm GND9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Output N/A N/C 10 Output N/A N/C11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Output N/A N/C 13 Output 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC02

Inputs High

TID Static Bias Conditions forPart Number 54HC02

Inputs Low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23660J (54HC02)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 NOTES VolVoh Voh3_Y4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y1 3.98 function for VOH and VOL tests. VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 2.00E-06Icc Icc_Vss 2.00E-06Iin Iil_A1 1.00E-07Iin Iil_A2 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_A3 1.00E-07Iin Iil_A4 1.00E-07Iin Iil_B1 1.00E-07Iin Iil_B2 1.00E-07Iin Iil_B3 1.00E-07Iin Iil_B4 1.00E-07Iin Iih_A1 1.00E-07Iin Iih_A2 1.00E-07Iin Iih_A3 1.00E-07Iin Iih_A4 1.00E-07Iin Iih_B1 1.00E-07Iin Iih_B2 1.00E-07Iin Iih_B3 1.00E-07Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC02 to Show Part Markings

Page 17: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23675J R1.1 070608

Customer: Texas Instruments Part Type Tested: Hex Inverters Commercial Part Number: 54HC04 SMD Part Number: 5962-8409801VCA Customer Part Number: 7150024-19 TI Part Number: MPD23675J Lot Number/Date Code: 0721A Wafer Lot Number: 7093858SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23675J (54HC04)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Output N/A N/C 2 Output N/A N/C3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Output N/A N/C 4 Output N/A N/C5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND

10 Output N/A N/C 10 Output N/A N/C11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC04

Inputs High

TID Static Bias Conditions forPart Number 54HC04

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23675J (54HC04)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y6) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y6) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y6) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y6) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y6) VolVoh Voh1_Y5 1.9 VolVoh Voh1_Y6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1A6) VolVoh Voh2_Y1 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 1A1-1A6) VolVoh Voh2_Y2 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-A6) VolVoh Voh2_Y3 4.4 VolVoh Voh2_Y4 4.4 VolVoh Voh2_Y5 4.4 VolVoh Voh2_Y6 4.4 NOTES VolVoh Voh3_Y1 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Y2 5.9 function for VOH and VOL tests. VolVoh Voh3_Y3 5.9 VolVoh Voh3_Y4 5.9 VolVoh Voh3_Y5 5.9 VolVoh Voh3_Y6 5.9 VolVoh Voh4_Y1 3.98 VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh4_Y5 3.98 VolVoh Voh4_Y6 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Voh5_Y5 5.48 VolVoh Voh5_Y6 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol1_Y5 0.1 VolVoh Vol1_Y6 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol2_Y5 0.1 VolVoh Vol2_Y6 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol3_Y4 0.1 VolVoh Vol3_Y5 0.1 VolVoh Vol3_Y6 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol4_Y5 0.26 VolVoh Vol4_Y6 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VolVoh Vol5_Y5 0.26 VolVoh Vol5_Y6 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_A5 1.5 VilVih * Vih1_A6 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_A5 3.15 VilVih * Vih2_A6 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_A5 4.2 VilVih * Vih3_A6 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_A5 0.3 VilVih * Vil1_A6 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_A5 0.9 VilVih * Vil2_A6 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_A5 1.2 VilVih * Vil3_A6 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 1.00E-07 Iin Iil_A2 1.00E-07 Iin Iil_A3 1.00E-07 Iin Iil_A4 1.00E-07 Iin Iil_A5 1.00E-07 Iin Iil_A6 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_A5 1.00E-07 Iin Iih_A6 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC04 to Show Part Markings

Page 23: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23664J R 1.1 070608

Customer: Texas Instruments Part Type Tested: Quadruple 2-Input Positive-AND Gates Commercial Part Number: 54HC08 SMD Part Number: 5962-8404701VCA Customer Part Number: 7150024-8 TI Part Number: MPD23664J Lot Number/Date Code: 0720A Wafer Lot Number: 7093861SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

Page 24: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23664J (54HC08)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND

10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Output N/A N/C 11 Output N/A N/C12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC08

Inputs High

TID Static Bias Conditions forPart Number 54HC08

Inputs low

Page 25: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23664J (54HC08)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 NOTES VolVoh Voh3_Y4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y1 3.98 function for VOH and VOL tests. VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 1.00E-07 Iin Iil_A2 1.00E-07 Iin Iil_A3 1.00E-07 Iin Iil_A4 1.00E-07 Iin Iil_B1 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_B2 1.00E-07 Iin Iil_B3 1.00E-07 Iin Iil_B4 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC08 to Show Part Markings

Page 29: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23658J R1.0 070606

Customer: Texas Instruments Part Type Tested: Triple 3-Input Positive-NAND Gates Commercial Part Number: 54HC10 SMD Part Number: 5962-8403801VCA Customer Part Number: 7150024-2 TI Part Number: MPD23658J Lot Number/Date Code: 0720A Wafer Lot Number: 7095090SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

Page 30: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23658J (54HC10)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND

10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC10

Inputs High

TID Static Bias Conditions forPart Number 54HC10

Inputs low

Page 31: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23658J (54HC10)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y3) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y3) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y3) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y3) VolVoh Voh2_Y1 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y3) VolVoh Voh2_Y2 4.4 VolVoh Voh2_Y3 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1C3) VolVoh Voh3_Y1 5.9 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2C3) VolVoh Voh3_Y2 5.9 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3C3) VolVoh Voh3_Y3 5.9 VolVoh Voh4_Y1 3.98 VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh5_Y1 5.48 NOTES VolVoh Voh5_Y2 5.48 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_Y3 5.48 function for VOH and VOL tests. VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_C1 1.5 VilVih * Vih1_C2 1.5 VilVih * Vih1_C3 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_B1 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_C1 3.15 VilVih * Vih2_C2 3.15 VilVih * Vih2_C3 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_C1 4.2 VilVih * Vih3_C2 4.2 VilVih * Vih3_C3 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_C1 0.3 VilVih * Vil1_C2 0.3 VilVih * Vil1_C3 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_C1 0.9 VilVih * Vil2_C2 0.9 VilVih * Vil2_C3 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_C1 1.2 VilVih * Vil3_C2 1.2 VilVih * Vil3_C3 1.2

Icc Icc_Vdd 2.00E-06Icc Icc_Vss 2.00E-06Iin Iil_1A -1.00E-07Iin Iil_2A -1.00E-07Iin Iil_3A -1.00E-07Iin Iil_1B -1.00E-07Iin Iil_2B -1.00E-07Iin Iil_3B -1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_1C -1.00E-07Iin Iil_2C -1.00E-07Iin Iil_3C -1.00E-07Iin Iih_1A 1.00E-07Iin Iih_2A 1.00E-07Iin Iih_3A 1.00E-07Iin Iih_1B 1.00E-07Iin Iih_2B 1.00E-07Iin Iih_3B 1.00E-07Iin Iih_1C 1.00E-07Iin Iih_2C 1.00E-07Iin Iih_3C 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC10 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23665J R1.0 070606

Customer: Texas Instruments Part Type Tested: Triple 3-Input Positive-AND Gates Commercial Part Number: 54HC11 SMD Part Number: 5962-8404801VCA Customer Part Number: 7150024-9 TI Part Number: MPD23665J Lot Number/Date Code: 0720A Wafer Lot Number: 7094008SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23665J (54HC11)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC11

Inputs High

TID Static Bias Conditions forPart Number 54HC11

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23665J (54HC11) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y3)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y3) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y3) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y3) VolVoh Voh2_Y1 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y3) VolVoh Voh2_Y2 4.4 VolVoh Voh2_Y3 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1C3) VolVoh Voh3_Y1 5.9 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2C3) VolVoh Voh3_Y2 5.9 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3C3) VolVoh Voh3_Y3 5.9 VolVoh Voh4_Y1 3.7 VolVoh Voh4_Y2 3.7 NOTES VolVoh Voh4_Y3 3.7 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_Y1 5.2 function for VOH and VOL tests. VolVoh Voh5_Y2 5.2 VolVoh Voh5_Y3 5.2 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol4_Y1 0.4 VolVoh Vol4_Y2 0.4 VolVoh Vol4_Y3 0.4 VolVoh Vol5_Y1 0.4 VolVoh Vol5_Y2 0.4 VolVoh Vol5_Y3 0.4 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_C1 1.5 VilVih * Vih1_C2 1.5 VilVih * Vih1_C3 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_A3 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_C1 3.15 VilVih * Vih2_C2 3.15 VilVih * Vih2_C3 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_C1 4.2 VilVih * Vih3_C2 4.2 VilVih * Vih3_C3 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_C1 0.3 VilVih * Vil1_C2 0.3 VilVih * Vil1_C3 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_C1 0.9 VilVih * Vil2_C2 0.9 VilVih * Vil2_C3 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_C1 1.2 VilVih * Vil3_C2 1.2 VilVih * Vil3_C3 1.2

Icc Icc_Vdd 4.00E-05 Icc Icc_Vss 4.00E-05

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_A1 -1.00E-06 Iin Iil_A2 -1.00E-06 Iin Iil_A3 -1.00E-06 Iin Iil_B1 -1.00E-06 Iin Iil_B2 -1.00E-06 Iin Iil_B3 -1.00E-06 Iin Iil_C1 -1.00E-06 Iin Iil_C2 -1.00E-06 Iin Iil_C3 -1.00E-06 Iin Iih_A1 1.00E-06 Iin Iih_A2 1.00E-06 Iin Iih_A3 1.00E-06 Iin Iih_B1 1.00E-06 Iin Iih_B2 1.00E-06 Iin Iih_B3 1.00E-06 Iin Iih_C1 1.00E-06 Iin Iih_C2 1.00E-06 Iin Iih_C3 1.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC11 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23682J R1.0 070606

Customer: Texas Instruments Part Type Tested: Hex Schmitt-Trigger Inverters Commercial Part Number: 54HC14 SMD Part Number: 5962-8409101VCA Customer Part Number: 7150024-26 TI Part Number: MPD23682J Lot Number/Date Code: 0721A Wafer Lot Number: 7093859SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23682J (54HC14)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Output N/A N/C 2 Output N/A N/C3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Output N/A N/C 4 Output N/A N/C5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Output N/A N/C 10 Output N/A N/C11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC14

Inputs High

TID Static Bias Conditions forPart Number 54HC14

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23682J (54HC14) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y6)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y6) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y6) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y6) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y6) VolVoh Voh1_Y5 1.9 VolVoh Voh1_Y6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1A6) VolVoh Voh2_Y1 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2A6) VolVoh Voh2_Y2 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3A6) VolVoh Voh2_Y3 4.4 VolVoh Voh2_Y4 4.4 VolVoh Voh2_Y5 4.4 NOTES VolVoh Voh2_Y6 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Y1 5.9 function for VOH and VOL tests. VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 VolVoh Voh3_Y4 5.9 VolVoh Voh3_Y5 5.9 VolVoh Voh3_Y6 5.9 VolVoh Voh4_Y1 3.98 VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh4_Y5 3.98 VolVoh Voh4_Y6 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Voh5_Y5 5.48 VolVoh Voh5_Y6 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol1_Y5 0.1 VolVoh Vol1_Y6 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol2_Y5 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol2_Y6 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol3_Y5 0.1 VolVoh Vol3_Y6 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol4_Y5 0.26 VolVoh Vol4_Y6 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VolVoh Vol5_Y5 0.26 VolVoh Vol5_Y6 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_A5 1.5 VilVih * Vih1_A6 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_A5 3.15 VilVih * Vih2_A6 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_A5 4.2 VilVih * Vih3_A6 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_A5 0.3 VilVih * Vil1_A6 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_A5 0.9 VilVih * Vil2_A6 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_A5 1.2 VilVih * Vil3_A6 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_A4 -1.00E-07 Iin Iil_A5 -1.00E-07 Iin Iil_A6 -1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_A5 1.00E-07 Iin Iih_A6 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC14 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23659J R1.0 070606

Customer: Texas Instruments Part Type Tested: Dual 4-Input Positive-NAND Gates Commercial Part Number: 54HC20 SMD Part Number: 5962-8403901VCA Customer Part Number: 7150024-3 TI Part Number: MPD23659J Lot Number/Date Code: 0720A Wafer Lot Number: 7094996SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

Page 48: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23659J (54HC20)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 N/C N/A N/C 3 N/C N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 N/C N/A N/C 11 N/C N/A N/C12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC20

Inputs High

TID Static Bias Conditions forPart Number 54HC20

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23659J (54HC20)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y2) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y2) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y2) VolVoh Voh2_Y1 4.4 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y2) VolVoh Voh2_Y2 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y2) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1D2) VolVoh Voh4_Y1 3.7 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2D2) VolVoh Voh4_Y2 3.7 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3D2) VolVoh Voh5_Y1 5.2 VolVoh Voh5_Y2 5.2 VolVoh Vol1_Y1 0.1 NOTES VolVoh Vol1_Y2 0.1 * Tests shall be guaranteed if applied as a forcing VolVoh Vol2_Y1 0.1 function for VOH and VOL tests. VolVoh Vol2_Y2 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol4_Y1 0.4 VolVoh Vol4_Y2 0.4 VolVoh Vol5_Y1 0.4 VolVoh Vol5_Y2 0.4 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_C1 1.5 VilVih * Vih1_C2 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_C1 3.15 VilVih * Vih2_C2 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_C1 4.2 VilVih * Vih3_C2 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vil1_A1 0.3

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil1_A2 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_C1 0.3 VilVih * Vil1_C2 0.3 VilVih * Vil1_D1 0.3 VilVih * Vil1_D2 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_C1 0.9 VilVih * Vil2_C2 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_C1 1.2 VilVih * Vil3_C2 1.2 VilVih * Vil3_D1 1.2 VilVih * Vil3_D2 1.2

Icc Icc_Vdd 4.00E-05 Icc Icc_Vss 4.00E-05 Iin Iil_A1 -1.00E-06Iin Iil_A2 -1.00E-06Iin Iil_B1 -1.00E-06Iin Iil_B2 -1.00E-06Iin Iil_C1 -1.00E-06Iin Iil_C2 -1.00E-06Iin Iil_D1 -1.00E-06Iin Iil_D2 -1.00E-06Iin Iih_A1 1.00E-06Iin Iih_A2 1.00E-06Iin Iih_B1 1.00E-06Iin Iih_B2 1.00E-06Iin Iih_C1 1.00E-06Iin Iih_C2 1.00E-06Iin Iih_D1 1.00E-06Iin Iih_D2 1.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC20 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23661J R1.0 070606

Customer: Texas Instruments Part Type Tested: Triple 3-Input Positive-NON Gates Commercial Part Number: 54HC27 SMD Part Number: 5962-8404201VCA Customer Part Number: 7150024-5 TI Part Number: MPD23661J Lot Number/Date Code: 0720A Wafer Lot Number: 7095093SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23661J (54HC27)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC27

Inputs High

TID Static Bias Conditions forPart Number 54HC27

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23661J (54HC27) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y3)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y3) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y3) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y3) VolVoh Voh2_Y1 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y3) VolVoh Voh2_Y2 4.4 VolVoh Voh2_Y3 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1C3) VolVoh Voh3_Y1 5.9 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2C3) VolVoh Voh3_Y2 5.9 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3C2) VolVoh Voh3_Y3 5.9 VolVoh Voh4_Y1 3.98 VolVoh Voh4_Y2 3.98 NOTES VolVoh Voh4_Y3 3.98 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_Y1 5.48 function for VOH and VOL tests. VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_C1 1.5 VilVih * Vih1_C2 1.5 VilVih * Vih1_C3 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_A3 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_C1 3.15 VilVih * Vih2_C2 3.15 VilVih * Vih2_C3 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_C1 4.2 VilVih * Vih3_C2 4.2 VilVih * Vih3_C3 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_C1 0.3 VilVih * Vil1_C2 0.3 VilVih * Vil1_C3 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_C1 0.9 VilVih * Vil2_C2 0.9 VilVih * Vil2_C3 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_C1 1.2 VilVih * Vil3_C2 1.2 VilVih * Vil3_C3 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iil_C1 -1.00E-07 Iin Iil_C2 -1.00E-07 Iin Iil_C3 -1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_C1 1.00E-07 Iin Iih_C2 1.00E-07 Iin Iih_C3 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC27 to Show Part Markings

Page 58: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23662J R1.0 070606

Customer: Texas Instruments Part Type Tested: Quadruple 2-Input Positive-OR Gates Commercial Part Number: 54HC32 SMD Part Number: 5962-8404501VCA Customer Part Number: 7150024-6 TI Part Number: MPD23662J Lot Number/Date Code: 0720A Wafer Lot Number: 7094005SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23662J (54HC32)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Output N/A N/C 11 Output N/A N/C12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC32

Inputs High

TID Static Bias Conditions forPart Number 54HC32

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23662J (54HC32) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4)VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 NOTES VolVoh Voh3_Y4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y1 3.98 function for VOH and VOL tests. VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_A1 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_A4 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iil_B4 -1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC32 to Show Part Markings

Page 64: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23666J R1.0 070606

Customer: Texas Instruments Part Type Tested: Dual D-Type Positive-Edge-Triggered Flip-Flops with Clear and Preset Commercial Part Number: 54HC74 SMD Part Number: 5962-8405601VCA Customer Part Number: 7150024-10 TI Part Number: MPD23666J Lot Number/Date Code: 0720A Wafer Lot Number: 7095198SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23666J (54HC74)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 1Clear\ 1 kOhm 5.5V 1 1Clear\ 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 1Clock\ 1 kOhm 5.5V 3 1Clock\ 1 kOhm GND4 1Preset\ 1 kOhm 5.5V 4 1Preset\ 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Output\ N/A N/C 6 Output\ N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output\ N/A N/C 8 Output\ N/A N/C9 Output N/A N/C 9 Output N/A N/C10 2Preset\ 1 kOhm 5.5V 10 2Preset\ 1 kOhm GND11 2Clock\ 1 kOhm 5.5V 11 2Clock\ 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 2Clear\ 1 kOhm 5.5V 13 2Clear\ 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC74

Inputs High

TID Static Bias Conditions forPart Number 54HC74

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23666J (54HC74) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Q1-1Q\2)

VolVoh Voh1_Q1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Q1-2Q\2) VolVoh Voh1_Q2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Q1-3Q\2) VolVoh Voh1_Q\1 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Q1-4Q\2)VolVoh Voh1_Q\2 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Q1-5Q\2)VolVoh Voh2_Q1 4.4 VolVoh Voh2_Q2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\1-1D2) VolVoh Voh2_Q\1 4.4 Vil2, Vih2: Vcc=4.5 V (inputs2CLR\1-2D2) VolVoh Voh2_Q\2 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\1-3D2) VolVoh Voh3_Q1 5.9 VolVoh Voh3_Q2 5.9 CLR\ = Inverse CLR VolVoh Voh3_Q\1 5.9 PRE\ = Inverse PRE VolVoh Voh3_Q\1 5.9 Q\ = Inverse Q VolVoh Voh4_Q1 3.98 VolVoh Voh4_Q2 3.98 VolVoh Voh4_Q\1 3.98 NOTES VolVoh Voh4_Q\2 3.98 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_Q1 5.48 function for VOH and VOL tests. VolVoh Voh5_Q2 5.48 VolVoh Voh5_Q\1 5.48 VolVoh Voh5_Q\2 5.48 VolVoh Vol1_Q1 0.1 VolVoh Vol1_Q2 0.1 VolVoh Vol1_Q\1 0.1 VolVoh Vol1_Q\2 0.1 VolVoh Vol2_Q1 0.1 VolVoh Vol2_Q2 0.1 VolVoh Vol2_Q\1 0.1 VolVoh Vol2_Q\2 0.1 VolVoh Vol3_Q1 0.1 VolVoh Vol3_Q2 0.1 VolVoh Vol3_Q\1 0.1 VolVoh Vol3_Q\2 0.1 VolVoh Vol4_Q1 0.26 VolVoh Vol4_Q2 0.26 VolVoh Vol4_Q\1 0.26 VolVoh Vol4_Q\2 0.26 VolVoh Vol5_Q1 0.26 VolVoh Vol5_Q2 0.26 VolVoh Vol5_Q\1 0.26 VolVoh Vol5_Q\2 0.26 VilVih * Vih1_CLR\1 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_CLR\2 1.5 VilVih * Vih1_CLK1 1.5 VilVih * Vih1_CLK2 1.5 VilVih * Vih1_PRE\1 1.5 VilVih * Vih1_PRE\2 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih2_CLR\1 3.15 VilVih * Vih2_CLR\2 3.15 VilVih * Vih2_CLK1 3.15 VilVih * Vih2_CLK2 3.15 VilVih * Vih2_PRE\1 3.15 VilVih * Vih2_PRE\2 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih3_CLR\1 4.2 VilVih * Vih3_CLR\2 4.2 VilVih * Vih3_CLK1 4.2 VilVih * Vih3_CLK2 4.2 VilVih * Vih3_PRE\1 4.2 VilVih * Vih3_PRE\2 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vil1_CLR\1 0.3 VilVih * Vil1_CLR\2 0.3 VilVih * Vil1_CLK1 0.3 VilVih * Vil1_CLK2 0.3 VilVih * Vil1_PRE\1 0.3 VilVih * Vil1_PRE\2 0.3 VilVih * Vil1_D1 0.3 VilVih * Vil1_D2 0.3 VilVih * Vil2_CLR\1 0.9 VilVih * Vil2_CLR\2 0.9 VilVih * Vil2_CLK1 0.9 VilVih * Vil2_CLK2 0.9 VilVih * Vil2_PRE\1 0.9 VilVih * Vil2_PRE\2 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil3_CLR\1 1.2 VilVih * Vil3_CLR\2 1.2 VilVih * Vil3_CLK1 1.2 VilVih * Vil3_CLK2 1.2 VilVih * Vil3_PRE\1 1.2 VilVih * Vil3_PRE\2 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_D1 1.2 VilVih * Vil3_D2 1.2

Icc Icc_Vdd 4.00E-06 Icc Icc_Vss 4.00E-06 Iin Iil_CLR\1 -1.00E-07 Iin Iil_CLR\2 -1.00E-07 Iin Iil_CLK1 -1.00E-07 Iin Iil_CLK2 -1.00E-07 Iin Iil_PRE1 -1.00E-07 Iin Iil_PRE2 -1.00E-07 Iin Iil_D1 -1.00E-07 Iin Iil_D2 -1.00E-07 Iin Iih_CLR\1 1.00E-07 Iin Iih_CLR\2 1.00E-07 Iin Iih_CLK1 1.00E-07 Iin Iih_CLK2 1.00E-07 Iin Iih_PRE1 1.00E-07 Iin Iih_PRE2 1.00E-07 Iin Iih_D1 1.00E-07 Iin Iih_D2 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC74 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23696J R1.0 070606

Customer: Texas Instruments Part Type Tested: High-Speed CMOS Logic 4-Bit Magnitude Comparator Commercial Part Number: 54HC85 SMD Part Number: N/A Customer Part Number: 5150028-2 TI Part Number: MPD23696J Lot Number/Date Code: 0722A Wafer Lot Number: 3126076DLN Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23696J (54HC85)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Input 1 kOhm 5.5V 15 Input 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC85

Inputs High

TID Static Bias Conditions forPart Number 54HC85

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23696J (54HC85)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1A>B-1A=B) VolVoh Voh1_A>B 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2A<B-2A=B) VolVoh Voh1_A<B 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3A>B-3A=B) VolVoh Voh1_A=B 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4A>B-4A-B)VolVoh Voh2_A>B 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5A>B-5A=B)VolVoh Voh2_A<B 4.4 VolVoh Voh2_A=B 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A>B-1B3) VolVoh Voh3_A>B 5.9 Vil2, Vih2: Vcc=4.5 V (inputs 2A>B-2B3) VolVoh Voh3_A<B 5.9 Vil3, Vih3: Vcc=6.0 V (inputs 3A>B-3B3) VolVoh Voh3_A=B 5.9 VolVoh Voh4_A>B 3.98 VolVoh Voh4_A<B 3.98 NOTES VolVoh Voh4_A=B 3.98 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_A>B 5.48 function for VOH and VOL tests. VolVoh Voh5_A<B 5.48 VolVoh Voh5_A=B 5.48 VolVoh Vol1_A>B 0.1 VolVoh Vol1_A<B 0.1 VolVoh Vol1_A=B 0.1 VolVoh Vol2_A>B 0.1 VolVoh Vol2_A<B 0.1 VolVoh Vol2_A=B 0.1 VolVoh Vol3_A>B 0.1 VolVoh Vol3_A<B 0.1 VolVoh Vol3_A=B 0.1 VolVoh Vol4_A>B 0.26 VolVoh Vol4_A<B 0.26 VolVoh Vol4_A=B 0.26 VolVoh Vol5_A>B 0.26 VolVoh Vol5_A<B 0.26 VolVoh Vol5_A=B 0.26 VilVih * Vih1_A>B 1.5 VilVih * Vih1_A<B 1.5 VilVih * Vih1_A=B 1.5 VilVih * Vih1_A0 1.5 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_B0 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_A>B 3.15 VilVih * Vih2_A<B 3.15 VilVih * Vih2_A=B 3.15 VilVih * Vih2_A0 3.15 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_B0 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih3_A>B 4.2 VilVih * Vih3_A<B 4.2 VilVih * Vih3_A=B 4.2 VilVih * Vih3_A0 4.2 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_B0 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vil1_A>B 0.3 VilVih * Vil1_A<B 0.3 VilVih * Vil1_A=B 0.3 VilVih * Vil1_A0 0.3 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_B0 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil2_A>B 0.9 VilVih * Vil2_A<B 0.9 VilVih * Vil2_A=B 0.9 VilVih * Vil2_A0 0.9 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_B0 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil3_A>B 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_A<B 1.2 VilVih * Vil3_A=B 1.2 VilVih * Vil3_A0 1.2 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_B0 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_A>B -1.00E-07 Iin Iil_A<B -1.00E-07 Iin Iil_A=B -1.00E-07 Iin Iil_A0 -1.00E-07 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_B0 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iih_A>B 1.00E-07 Iin Iih_A<B 1.00E-07 Iin Iih_A=B 1.00E-07 Iin Iih_A0 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_B0 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC85 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23663J R1.0 070606

Customer: Texas Instruments Part Type Tested: Quadruple 2-Input Exclusive-OR Gates Commercial Part Number: 54HC86 SMD Part Number: 5962-8404601VCA Customer Part Number: 7150024-7 TI Part Number: MPD23663J Lot Number/Date Code: 0720A Wafer Lot Number: 7094998SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23663J (54HC86)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Output N/A N/C 8 Output N/A N/C9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND

10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Output N/A N/C 11 Output N/A N/C12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC86

Inputs High

TID Static Bias Conditions forPart Number 54HC86

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23663J (54HC86) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4)VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1A1-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2A1-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3A1-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 NOTES VolVoh Voh3_Y4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y1 3.98 function for VOH and VOL tests. VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_A1 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 2.00E-06 Icc Icc_Vss 2.00E-06 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_A4 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iil_B4 -1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC86 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23677J R1.0 070606

Customer: Texas Instruments Part Type Tested: Dual J-K\ Positive-Edge-Triggered Flip-Flops with Clear and Preset Commercial Part Number: 54HC109 SMD Part Number: 5962-8415001VEA Customer Part Number: 7150024-21 TI Part Number: MPD23677J Lot Number/Date Code: 0721A Wafer Lot Number: 7094002SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23677J (54HC109)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 1Clear\ 1 kOhm 5.5V 1 1Clear\ 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input\ 1 kOhm 5.5V 3 Input\ 1 kOhm GND4 1Clock 1 kOhm 5.5V 4 1Clock 1 kOhm GND5 1Preset\ 1 kOhm 5.5V 5 1Preset\ 1 kOhm GND6 Output N/A N/C 6 Output N/A N/C7 Output\ N/A N/C 7 Output\ N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Output\ N/A N/C 9 Output\ N/A N/C

10 Output N/A N/C 10 Output N/A N/C11 2Preset\ 1 kOhm 5.5V 11 2Preset\ 1 kOhm GND12 2Clock 1 kOhm 5.5V 12 2Clock 1 kOhm GND13 Input\ 1 kOhm 5.5V 13 Input\ 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 2Clear\ 1 kOhm 5.5V 15 2Clear\ 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC109

Inputs High

TID Static Bias Conditions forPart Number 54HC109

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23677J (54HC109)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Q1-1Q\2) VolVoh Voh1_Q1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Q1-2Q\2) VolVoh Voh1_Q2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Q1-3Q\2) VolVoh Voh1_Q\1 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Q1-4Q\2) VolVoh Voh1_Q\2 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Q1-5Q\2) VolVoh Voh2_Q1 4.4 VolVoh Voh2_Q2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\1-1K2) VolVoh Voh2_Q\1 4.4 Vil2, Vih2: Vcc=4.5 V (inputs2CLR\1-2K2) VolVoh Voh2_Q\2 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\1-3K2) VolVoh Voh3_Q1 5.9 VolVoh Voh3_Q2 5.9 CLR\ = Inverse CLR VolVoh Voh3_Q\1 5.9 PRE\ = Inverse PRE VolVoh Voh3_Q\1 5.9 K\ = Inverse K VolVoh Voh4_Q1 3.98 Q\ = Inverse Q VolVoh Voh4_Q2 3.98 VolVoh Voh4_Q\1 3.98 VolVoh Voh4_Q\2 3.98 NOTES VolVoh Voh5_Q1 5.48 * Tests shall be guaranteed if applied as a forcing VolVoh Voh5_Q2 5.48 function for VOH and VOL tests. VolVoh Voh5_Q\1 5.48 VolVoh Voh5_Q\2 5.48 VolVoh Vol1_Q1 0.1 VolVoh Vol1_Q2 0.1 VolVoh Vol1_Q\1 0.1 VolVoh Vol1_Q\2 0.1 VolVoh Vol2_Q1 0.1 VolVoh Vol2_Q2 0.1 VolVoh Vol2_Q\1 0.1 VolVoh Vol2_Q\2 0.1 VolVoh Vol3_Q1 0.1 VolVoh Vol3_Q2 0.1 VolVoh Vol3_Q\1 0.1 VolVoh Vol3_Q\2 0.1 VolVoh Vol4_Q1 0.26 VolVoh Vol4_Q2 0.26 VolVoh Vol4_Q\1 0.26 VolVoh Vol4_Q\2 0.26 VolVoh Vol5_Q1 0.26 VolVoh Vol5_Q2 0.26 VolVoh Vol5_Q\1 0.26 VolVoh Vol5_Q\2 0.26 VilVih * Vih1_CLR\1 1.5 VilVih * Vih1_CLR\2 1.5 VilVih * Vih1_CLK1 1.5 VilVih * Vih1_CLK2 1.5 VilVih * Vih1_PRE\1 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_PRE\2 1.5 VilVih * Vih1_J1 1.5 VilVih * Vih1_J2 1.5 VilVih * Vih1_K\1 1.5 VilVih * Vih1_K\2 1.5 VilVih * Vih2_CLR\1 3.15 VilVih * Vih2_CLR\2 3.15 VilVih * Vih2_CLK1 3.15 VilVih * Vih2_CLK2 3.15 VilVih * Vih2_PRE\1 3.15 VilVih * Vih2_PRE\2 3.15 VilVih * Vih2_J1 3.15 VilVih * Vih2_J2 3.15 VilVih * Vih2_K\1 3.15 VilVih * Vih2_K\2 3.15 VilVih * Vih3_CLR\1 4.2 VilVih * Vih3_CLR\2 4.2 VilVih * Vih3_CLK1 4.2 VilVih * Vih3_CLK2 4.2 VilVih * Vih3_PRE\1 4.2 VilVih * Vih3_PRE\2 4.2 VilVih * Vih3_J1 4.2 VilVih * Vih3_J2 4.2 VilVih * Vih3_K\1 4.2 VilVih * Vih3_K\2 4.2 VilVih * Vil1_CLR\1 0.3 VilVih * Vil1_CLR\2 0.3 VilVih * Vil1_CLK1 0.3 VilVih * Vil1_CLK2 0.3 VilVih * Vil1_PRE\1 0.3 VilVih * Vil1_PRE\2 0.3 VilVih * Vil1_J1 0.3 VilVih * Vil1_J2 0.3 VilVih * Vil1_K\1 0.3 VilVih * Vil1_K\2 0.3 VilVih * Vil2_CLR\1 0.9 VilVih * Vil2_CLR\2 0.9 VilVih * Vil2_CLK1 0.9 VilVih * Vil2_CLK2 0.9 VilVih * Vil2_PRE\1 0.9 VilVih * Vil2_PRE\2 0.9 VilVih * Vil2_J1 0.9 VilVih * Vil2_J2 0.9 VilVih * Vil2_K\1 0.9 VilVih * Vil2_K\2 0.9 VilVih * Vil3_CLR\1 1.2 VilVih * Vil3_CLR\2 1.2 VilVih * Vil3_CLK1 1.2 VilVih * Vil3_CLK2 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_PRE\1 1.2 VilVih * Vil3_PRE\2 1.2 VilVih * Vil3_J1 1.2 VilVih * Vil3_J2 1.2 VilVih * Vil3_K\1 1.2 VilVih * Vil3_K\2 1.2

Icc Icc_Vdd 4.00E-06Icc Icc_Vss 4.00E-06Iin Iil_CLR\1 -1.00E-07Iin Iil_CLR\2 -1.00E-07Iin Iil_CLK1 -1.00E-07Iin Iil_CLK2 -1.00E-07Iin Iil_PRE\1 -1.00E-07Iin Iil_PRE\2 -1.00E-07Iin Iil_J1 -1.00E-07Iin Iil_J2 -1.00E-07Iin Iil_K\1 -1.00E-07Iin Iil_K\2 -1.00E-07Iin Iih_CLR\1 1.00E-07Iin Iih_CLR\2 1.00E-07Iin Iih_CLK1 1.00E-07Iin Iih_CLK2 1.00E-07Iin Iih_PRE\1 1.00E-07Iin Iih_PRE\2 1.00E-07Iin Iih_J1 1.00E-07Iin Iih_J2 1.00E-07Iin Iih_K\1 1.00E-07Iin Iih_K\2 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC109 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23667J R1.0 070606

Customer: Texas Instruments Part Type Tested: 3-Line to 8-Line Decoders/Demultiplexers Commercial Part Number: 54HC138 SMD Part Number: 5962-8406201VEA Customer Part Number: 7150024-11 TI Part Number: MPD23667J Lot Number/Date Code: 0721A Wafer Lot Number: 7094997SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23667J (54HC138)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input\ 1 kOhm 5.5V 4 Input\ 1 kOhm GND5 Input\ 1 kOhm 5.5V 5 Input\ 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Output N/A N/C 9 Output N/A N/C10 Output N/A N/C 10 Output N/A N/C11 Output N/A N/C 11 Output N/A N/C12 Output N/A N/C 12 Output N/A N/C13 Output N/A N/C 13 Output N/A N/C14 Output N/A N/C 14 Output N/A N/C15 Output N/A N/C 15 Output N/A N/C16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC138

Inputs High

TID Static Bias Conditions forPart Number 54HC138

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23667J (54HC138)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y0-1Y7) VolVoh Voh1_Y0 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y0-2Y7) VolVoh Voh1_Y1 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y0-3Y7) VolVoh Voh1_Y2 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y0-4Y7)VolVoh Voh1_Y3 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y0-5Y7) VolVoh Voh1_Y4 1.9 VolVoh Voh1_Y5 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1G1-1A) VolVoh Voh1_Y6 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2G1-2A) VolVoh Voh1_Y7 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3G1-3A) VolVoh Voh2_Y0 4.4 VolVoh Voh2_Y1 4.4 G2A\ = Inverse G2A VolVoh Voh2_Y2 4.4 G2B\ = Inverse G2B VolVoh Voh2_Y3 4.4 VolVoh Voh2_Y4 4.4 VolVoh Voh2_Y5 4.4 NOTES VolVoh Voh2_Y6 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh2_Y7 4.4 function for VOH and VOL tests. VolVoh Voh3_Y0 5.9 VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 VolVoh Voh3_Y3 5.9 VolVoh Voh3_Y4 5.9 VolVoh Voh3_Y5 5.9 VolVoh Voh3_Y6 5.9 VolVoh Voh3_Y7 5.9 VolVoh Voh4_Y0 3.98 VolVoh Voh4_Y1 3.98 VolVoh Voh4_Y2 3.98 VolVoh Voh4_Y3 3.98 VolVoh Voh4_Y4 3.98 VolVoh Voh4_Y5 3.98 VolVoh Voh4_Y6 3.98 VolVoh Voh4_Y7 3.98 VolVoh Voh5_Y0 5.48 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Voh5_Y5 5.48 VolVoh Voh5_Y6 5.48 VolVoh Voh5_Y7 5.48 VolVoh Vol1_Y0 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol1_Y5 0.1 VolVoh Vol1_Y6 0.1 VolVoh Vol1_Y7 0.1 VolVoh Vol2_Y0 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol2_Y5 0.1 VolVoh Vol2_Y6 0.1 VolVoh Vol2_Y7 0.1 VolVoh Vol3_Y0 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol3_Y5 0.1 VolVoh Vol3_Y6 0.1 VolVoh Vol3_Y7 0.1 VolVoh Vol4_Y0 0.26 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol4_Y5 0.26 VolVoh Vol4_Y6 0.26 VolVoh Vol4_Y7 0.26 VolVoh Vol5_Y0 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VolVoh Vol5_Y5 0.26 VolVoh Vol5_Y6 0.26 VolVoh Vol5_Y7 0.26 VilVih * Vih1_G1 1.5 VilVih * Vih1_G2A\ 1.5 VilVih * Vih1_G2B\ 1.5 VilVih * Vih1_C 1.5 VilVih * Vih1_B 1.5 VilVih * Vih1_A 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_G1 3.15 VilVih * Vih2_G2A\ 3.15 VilVih * Vih2_G2B\ 3.15 VilVih * Vih2_C 3.15 VilVih * Vih2_B 3.15 VilVih * Vih2_A 3.15 VilVih * Vih3_G1 4.2 VilVih * Vih3_G2A\ 4.2 VilVih * Vih3_G2B\ 4.2 VilVih * Vih3_C 4.2 VilVih * Vih3_B 4.2 VilVih * Vih3_A 4.2 VilVih * Vil1_G1 0.3 VilVih * Vil1_G2A\ 0.3 VilVih * Vil1_G2B\ 0.3 VilVih * Vil1_C 0.3 VilVih * Vil1_B 0.3 VilVih * Vil1_A 0.3 VilVih * Vil2_G1 0.9 VilVih * Vil2_G2A\ 0.9 VilVih * Vil2_G2B\ 0.9 VilVih * Vil2_C 0.9 VilVih * Vil2_B 0.9 VilVih * Vil2_A 0.9 VilVih * Vil3_G1 1.2 VilVih * Vil3_G2A\ 1.2 VilVih * Vil3_G2B\ 1.2 VilVih * Vil3_C 1.2 VilVih * Vil3_B 1.2 VilVih * Vil3_A 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_G1 -1.00E-07 Iin Iil_G2A\ -1.00E-07 Iin Iil_G2B\ -1.00E-07 Iin Iil_C -1.00E-07 Iin Iil_B -1.00E-07 Iin Iil_A -1.00E-07 Iin Iih_G1 1.00E-07 Iin Iih_G2A\ 1.00E-07 Iin Iih_G2B\ 1.00E-07 Iin Iih_C 1.00E-07 Iin Iih_B 1.00E-07 Iin Iih_A 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC138 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23672J R1.0 070606

Customer: Texas Instruments Part Type Tested: Dual 2-Line to 4-Line Decoders/Demultiplexers Commercial Part Number: 54HC139 SMD Part Number: 5962-8409201VEA Customer Part Number: 7150024-16 TI Part Number: MPD23672J Lot Number/Date Code: 0720A Wafer Lot Number: 7096354SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23672J (54HC139)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input\ 1 kOhm 5.5V 1 Input\ 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Output N/A N/C 4 Output N/A N/C5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Output N/A N/C 9 Output N/A N/C10 Output N/A N/C 10 Output N/A N/C11 Output N/A N/C 11 Output N/A N/C12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Input\ 1 kOhm 5.5V 15 Input\ 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC139

Inputs High

TID Static Bias Conditions forPart Number 54HC139

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23672J (54HC139)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y0_1-1Y3_2) VolVoh Voh1_Y0_1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y0_1-2Y3_2) VolVoh Voh1_Y0_2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y0_1-3Y3_2) VolVoh Voh1_Y1_1 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y0_1-4Y3_2)VolVoh Voh1_Y1_2 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y0_1-5Y3_2)VolVoh Voh1_Y2_1 1.9 VolVoh Voh1_Y2_2 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1G\1-1A2) VolVoh Voh1_Y3_1 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2G\1-2A2) VolVoh Voh1_Y3_2 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3G\1-3A2) VolVoh Voh2_Y0_1 4.4 VolVoh Voh2_Y0_2 4.4 VolVoh Voh2_Y1_1 4.4 VolVoh Voh2_Y1_2 4.4 G\ = Inverse G VolVoh Voh2_Y2_1 4.4 VolVoh Voh2_Y2_2 4.4 VolVoh Voh2_Y3_1 4.4 NOTES VolVoh Voh2_Y3_2 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Y0_1 5.9 function for VOH and VOL tests. VolVoh Voh3_Y0_2 5.9 VolVoh Voh3_Y1_1 5.9 VolVoh Voh3_Y1_2 5.9 VolVoh Voh3_Y2_1 5.9 VolVoh Voh3_Y2_2 5.9 VolVoh Voh3_Y3_1 5.9 VolVoh Voh3_Y3_2 5.9 VolVoh Voh4_Y0_1 3.98 VolVoh Voh4_Y0_2 3.98 VolVoh Voh4_Y1_1 3.98 VolVoh Voh4_Y1_2 3.98 VolVoh Voh4_Y2_1 3.98 VolVoh Voh4_Y2_2 3.98 VolVoh Voh4_Y3_1 3.98 VolVoh Voh4_Y3_2 3.98 VolVoh Voh5_Y0_1 5.48 VolVoh Voh5_Y0_2 5.48 VolVoh Voh5_Y1_1 5.48 VolVoh Voh5_Y1_2 5.48 VolVoh Voh5_Y2_1 5.48 VolVoh Voh5_Y2_2 5.48 VolVoh Voh5_Y3_1 5.48 VolVoh Voh5_Y3_2 5.48 6 VolVoh Vol1_Y0_1 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_Y0_2 0.1 VolVoh Vol1_Y1_1 0.1 VolVoh Vol1_Y1_2 0.1 VolVoh Vol1_Y2_1 0.1 VolVoh Vol1_Y2_2 0.1 VolVoh Vol1_Y3_1 0.1 VolVoh Vol1_Y3_2 0.1 VolVoh Vol2_Y0_1 0.1 VolVoh Vol2_Y0_2 0.1 VolVoh Vol2_Y1_1 0.1 VolVoh Vol2_Y1_2 0.1 VolVoh Vol2_Y2_1 0.1 VolVoh Vol2_Y2_2 0.1 VolVoh Vol2_Y3_1 0.1 VolVoh Vol2_Y3_2 0.1 VolVoh Vol3_Y0_1 0.1 VolVoh Vol3_Y0_2 0.1 VolVoh Vol3_Y1_1 0.1 VolVoh Vol3_Y1_2 0.1 VolVoh Vol3_Y2_1 0.1 VolVoh Vol3_Y2_2 0.1 VolVoh Vol3_Y3_1 0.1 VolVoh Vol3_Y3_2 0.1 VolVoh Vol4_Y0_1 0.26 VolVoh Vol4_Y0_2 0.26 VolVoh Vol4_Y1_1 0.26 VolVoh Vol4_Y1_2 0.26 VolVoh Vol4_Y2_1 0.26 VolVoh Vol4_Y2_2 0.26 VolVoh Vol4_Y3_1 0.26 VolVoh Vol4_Y3_2 0.26 VolVoh Vol5_Y0_1 0.26 VolVoh Vol5_Y0_2 0.26 VolVoh Vol5_Y1_1 0.26 VolVoh Vol5_Y1_2 0.26 VolVoh Vol5_Y2_1 0.26 VolVoh Vol5_Y2_2 0.26 VolVoh Vol5_Y3_1 0.26 VolVoh Vol5_Y3_2 0.26 VilVih * Vih1_G\1 1.5 VilVih * Vih1_G\2 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_G\1 3.15 VilVih * Vih2_G\2 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih3_G\1 4.2 VilVih * Vih3_G\2 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vil1_G\1 0.3 VilVih * Vil1_G\2 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil2_G\1 0.9 VilVih * Vil2_G\2 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil3_G\1 1.2 VilVih * Vil3_G\2 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_G\1 -1.00E-07 Iin Iil_G\2 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iih_G\1 1.00E-07 Iin Iih_G\2 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC139 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23673J R1.0 070606

Customer: Texas Instruments Part Type Tested: Dual 4-Line to 1-Line Data Selectors/Multiplexers Commercial Part Number: 54HC153 SMD Part Number: 5962-8409301VEA Customer Part Number: 7150024-17 TI Part Number: MPD23673J Lot Number/Date Code: 0721A Wafer Lot Number: 7096355SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23673J (54HC153)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input\ 1 kOhm 5.5V 1 Input\ 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Output N/A N/C 9 Output N/A N/C

10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Input\ 1 kOhm 5.5V 15 Input\ 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC153

Inputs High

TID Static Bias Conditions forPart Number 54HC153

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23673J (54HC153)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y2) VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y2) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y2) VolVoh Voh2_Y1 4.4 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y1-4Y2)VolVoh Voh2_Y2 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y1-5Y2) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 Vil1, Vih1: Vcc=2.0 V (inputs 1B-1G\2) VolVoh Voh4_Y1 3.7 Vil2, Vih2: Vcc=4.5 V (inputs 2B-2G\2) VolVoh Voh4_Y2 3.7 Vil3, Vih3: Vcc=6.0 V (inputs 3B-3G\2) VolVoh Voh5_Y1 5.2 VolVoh Voh5_Y2 5.2 VolVoh Vol1_Y1 0.1 G\ = Inverse G VolVoh Vol1_Y2 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 NOTES VolVoh Vol3_Y1 0.1 * Tests shall be guaranteed if applied as a forcing VolVoh Vol3_Y2 0.1 function for VOH and VOL tests. VolVoh Vol4_Y1 0.4 VolVoh Vol4_Y2 0.4 VolVoh Vol5_Y1 0.4 VolVoh Vol5_Y2 0.4 VilVih * Vih1_B 1.5 VilVih * Vih1_A 1.5 VilVih * Vih1_C0_1 1.5 VilVih * Vih1_C0_2 1.5 VilVih * Vih1_C1_1 1.5 VilVih * Vih1_C1_2 1.5 VilVih * Vih1_C2_1 1.5 VilVih * Vih1_C2_2 1.5 VilVih * Vih1_C3_1 1.5 VilVih * Vih1_C3_2 1.5 VilVih * Vih1_G\1 1.5 VilVih * Vih1_G\2 1.5 VilVih * Vih2_B 3.15 VilVih * Vih2_A 3.15 VilVih * Vih2_CO_1 3.15 VilVih * Vih2_CO_2 3.15 VilVih * Vih2_C1_1 3.15 VilVih * Vih2_C1_2 3.15 VilVih * Vih2_C2_1 3.15 VilVih * Vih2_C2_2 3.15 VilVih * Vih2_C3_1 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_C3_2 3.15 VilVih * Vih2_G\1 3.15 VilVih * Vih2_G\2 3.15 VilVih * Vih3_B 4.2 VilVih * Vih3_A 4.2 VilVih * Vih3_CO_1 4.2 VilVih * Vih3_CO_2 4.2 VilVih * Vih3_C1_1 4.2 VilVih * Vih3_C1_2 4.2 VilVih * Vih3_C2_1 4.2 VilVih * Vih3_C2_2 4.2 VilVih * Vih3_C3_1 4.2 VilVih * Vih3_C3_2 4.2 VilVih * Vih3_G\1 4.2 VilVih * Vih3_G\2 4.2 VilVih * Vil1_B 0.3 VilVih * Vil1_A 0.3 VilVih * Vil1_C0_1 0.3 VilVih * Vil1_C0_2 0.3 VilVih * Vil1_C1_1 0.3 VilVih * Vil1_C1_2 0.3 VilVih * Vil1_C2_1 0.3 VilVih * Vil1_C2_2 0.3 VilVih * Vil1_C3_1 0.3 VilVih * Vil1_C3_2 0.3 VilVih * Vil1_G\1 0.3 VilVih * Vil1_G\2 0.3 VilVih * Vil2_B 0.9 VilVih * Vil2_A 0.9 VilVih * Vil2_C0_1 0.9 VilVih * Vil2_C0_2 0.9 VilVih * Vil2_C1_1 0.9 VilVih * Vil2_C1_2 0.9 VilVih * Vil2_C2_1 0.9 VilVih * Vil2_C2_2 0.9 VilVih * Vil2_C3_1 0.9 VilVih * Vil2_C3_2 0.9 VilVih * Vil2_G\1 0.9 VilVih * Vil2_G\2 0.9 VilVih * Vil3_B 1.2 VilVih * Vil3_A 1.2 VilVih * Vil3_C0_1 1.2 VilVih * Vil3_C0_2 1.2 VilVih * Vil3_C1_1 1.2 VilVih * Vil3_C1_2 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_C2_1 1.2 VilVih * Vil3_C2_2 1.2 VilVih * Vil3_C3_1 1.2 VilVih * Vil3_C3_2 1.2 VilVih * Vil3_G\1 1.2 VilVih * Vil3_G\2 1.2

Icc Icc_Vdd 1.60E-04 Icc Icc_Vss 1.60E-04 Iin Iil_B -1.00E-06 Iin Iil_A -1.00E-06 Iin Iil_C0_1 -1.00E-06 Iin Iil_C0_2 -1.00E-06 Iin Iil_C1_1 -1.00E-06 Iin Iil_C1_2 -1.00E-06 Iin Iil_C2_1 -1.00E-06 Iin Iil_C2_2 -1.00E-06 Iin Iil_C3_1 -1.00E-06 Iin Iil_C3_2 -1.00E-06 Iin Iil_G\1 -1.00E-06 Iin Iil_G\2 -1.00E-06 Iin Iih_B 1.00E-06 Iin Iih_A 1.00E-06 Iin Iih_C0_1 1.00E-06 Iin Iih_C0_2 1.00E-06 Iin Iih_C1_1 1.00E-06 Iin Iih_C1_2 1.00E-06 Iin Iih_C2_1 1.00E-06 Iin Iih_C2_2 1.00E-06 Iin Iih_C3_1 1.00E-06 Iin Iih_C3_2 1.00E-06 Iin Iih_G\1 1.00E-06 Iin Iih_G\2 1.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC153 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23680J R1.0 070606

Customer: Texas Instruments Part Type Tested: Quadruple 2-Line to 1-Line Data Selectors/Multiplexers Commercial Part Number: 54HC157 SMD Part Number: 5962-8606101VEA Customer Part Number: 7150024-24 TI Part Number: MPD23680J Lot Number/Date Code: 0720A Wafer Lot Number: 7096357SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23680J (54HC157)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Output N/A N/C 4 Output N/A N/C5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Output N/A N/C 9 Output N/A N/C

10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Input\ 1 kOhm 5.5V 15 Input\ 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC157

Inputs High

TID Static Bias Conditions forPart Number 54HC157

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23680J (54HC157) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4)

VolVoh Voh1_Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_Y3 1.9 Vol4, Voh4: Ioh=6.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4) VolVoh Voh1_Y4 1.9 Vol5, Voh5: Ioh=7.8 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh2_Y1 4.4 VolVoh Voh2_Y2 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1G\-1B4) VolVoh Voh2_Y3 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2G\-2B4) VolVoh Voh2_Y4 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3G\-3B4) VolVoh Voh3_Y1 5.9 VolVoh Voh3_Y2 5.9 G\ = Inverse G VolVoh Voh3_Y3 5.9 A\ = Inverse A VolVoh Voh3_Y4 5.9 VolVoh Voh4_Y1 3.98 NOTES VolVoh Voh4_Y2 3.98 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_Y3 3.98 function for VOH and VOL tests. VolVoh Voh4_Y4 3.98 VolVoh Voh5_Y1 5.48 VolVoh Voh5_Y2 5.48 VolVoh Voh5_Y3 5.48 VolVoh Voh5_Y4 5.48 VolVoh Vol1_Y1 0.1 VolVoh Vol1_Y2 0.1 VolVoh Vol1_Y3 0.1 VolVoh Vol1_Y4 0.1 VolVoh Vol2_Y1 0.1 VolVoh Vol2_Y2 0.1 VolVoh Vol2_Y3 0.1 VolVoh Vol2_Y4 0.1 VolVoh Vol3_Y1 0.1 VolVoh Vol3_Y2 0.1 VolVoh Vol3_Y3 0.1 VolVoh Vol3_Y4 0.1 VolVoh Vol4_Y1 0.26 VolVoh Vol4_Y2 0.26 VolVoh Vol4_Y3 0.26 VolVoh Vol4_Y4 0.26 VolVoh Vol5_Y1 0.26 VolVoh Vol5_Y2 0.26 VolVoh Vol5_Y3 0.26 VolVoh Vol5_Y4 0.26 VilVih * Vih1_G\ 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_A\ /B 1.5 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih2_G\ 3.15 VilVih * Vih2_A\ /B 3.15 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih3_G\ 4.2 VilVih * Vih3_A\ /B 4.2 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vil1_G\ 0.3 VilVih * Vil1_A\ /B 0.3 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil2_G\ 0.9 VilVih * Vil2_A\ /B 0.9 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil3_G\ 1.2 VilVih * Vil3_A\ /B 1.2 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_G\ -1.00E-07 Iin Iil_A\ /B -1.00E-07 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_A4 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iil_B4 -1.00E-07 Iin Iih_G\ 1.00E-07 Iin Iih_A\ /B 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC157 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23670J R1.0 070606

Customer: Texas Instruments Part Type Tested: 4-Bit Synchronous Binary Counters Commercial Part Number: 54HC161 SMD Part Number: 5962-8407501VEA Customer Part Number: 7150024-14 TI Part Number: MPD23670J Lot Number/Date Code: 0720A Wafer Lot Number: 7094001SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23670J (54HC161)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Clear\ 1 kOhm 5.5V 1 Clear\ 1 kOhm GND2 Clock 1 kOhm 5.5V 2 Clock 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Count-Enable ENP 1 kOhm 5.5V 7 Count-Enable ENP 1 kOhm GND8 GND Jumper GND 8 GND Jumper GND9 Load\ 1 kOhm 5.5V 9 Load\ 1 kOhm GND10 Count-Enable ENT 1 kOhm 5.5V 10 Count-Enable ENT 1 kOhm GND11 Output N/A N/C 11 Output N/A N/C12 Output N/A N/C 12 Output N/A N/C13 Output N/A N/C 13 Output N/A N/C14 Output N/A N/C 14 Output N/A N/C15 Ripple-Carry Output 1 kOhm 5.5V 15 Ripple-Carry Output 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC161

Inputs High

TID Static Bias Conditions forPart Number 54HC161

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23670J (54HC161)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1QA-1RCO) VolVoh Voh1_QA 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2QA-2RCO) VolVoh Voh1_QB 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3QA-3RCO) VolVoh Voh1_QC 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4QA-4RCO)VolVoh Voh1_QD 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5QA-5RCO)VolVoh Voh1_RCO 1.9 VolVoh Voh2_QA 4.4 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\-1D) VolVoh Voh2_QB 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2CLR\-2D) VolVoh Voh2_QC 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\-3D) VolVoh Voh2_QD 4.4 VolVoh Voh2_RCO 4.4 VolVoh Voh3_QA 5.9 VolVoh Voh3_QB 5.9 CLR\ = Inverse CLR VolVoh Voh3_QC 5.9 LOAD\ = Inverse LOAD VolVoh Voh3_QD 5.9 VolVoh Voh3_RCO 5.9 VolVoh Voh4_QA 3.98 NOTES VolVoh Voh4_QB 3.98 * Tests shall be guaranteed if applied as a forcing VolVoh Voh4_QC 3.98 function for VOH and VOL tests. VolVoh Voh4_QD 3.98 VolVoh Voh4_RCO 3.98 VolVoh Voh5_QA 5.48 VolVoh Voh5_QB 5.48 VolVoh Voh5_QC 5.48 VolVoh Voh5_QD 5.48 VolVoh Voh5_RCO 5.48 VolVoh Vol1_QA 0.1 VolVoh Vol1_QB 0.1 VolVoh Vol1_QC 0.1 VolVoh Vol1_QD 0.1 VolVoh Vol1_RCO 0.1 VolVoh Vol2_QA 0.1 VolVoh Vol2_QB 0.1 VolVoh Vol2_QC 0.1 VolVoh Vol2_QD 0.1 VolVoh Vol2_RCO 0.1 VolVoh Vol3_QA 0.1 VolVoh Vol3_QB 0.1 VolVoh Vol3_QC 0.1 VolVoh Vol3_QD 0.1 VolVoh Vol3_RCO 0.1 VolVoh Vol4_QA 0.26

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol4_QB 0.26 VolVoh Vol4_QC 0.26 VolVoh Vol4_QD 0.26 VolVoh Vol4_RCO 0.26 VolVoh Vol5_QA 0.26 VolVoh Vol5_QB 0.26 VolVoh Vol5_QC 0.26 VolVoh Vol5_QD 0.26 VolVoh Vol5_RCO 0.26 VilVih * Vih1_CLR\ 1.5 VilVih * Vih1_CLK 1.5 VilVih * Vih1_ENP 1.5 VilVih * Vih1_ENT 1.5 VilVih * Vih1_LOAD\ 1.5 VilVih * Vih1_A 1.5 VilVih * Vih1_B 1.5 VilVih * Vih1_C 1.5 VilVih * Vih1_D 1.5 VilVih * Vih2_CLR\ 3.15 VilVih * Vih2_CLK 3.15 VilVih * Vih2_ENP 3.15 VilVih * Vih2_ENT 3.15 VilVih * Vih2_LOAD\ 3.15 VilVih * Vih2_A 3.15 VilVih * Vih2_B 3.15 VilVih * Vih2_C 3.15 VilVih * Vih2_D 3.15 VilVih * Vih3_CLR\ 4.2 VilVih * Vih3_CLK 4.2 VilVih * Vih3_ENP 4.2 VilVih * Vih3_ENT 4.2 VilVih * Vih3_LOAD\ 4.2 VilVih * Vih3_A 4.2 VilVih * Vih3_B 4.2 VilVih * Vih3_C 4.2 VilVih * Vih3_D 4.2 VilVih * Vil1_CLR\ 0.3 VilVih * Vil1_CLK 0.3 VilVih * Vil1_ENP 0.3 VilVih * Vil1_ENT 0.3 VilVih * Vil1_LOAD\ 0.3 VilVih * Vil1_A 0.3 VilVih * Vil1_B 0.3 VilVih * Vil1_C 0.3 VilVih * Vil1_D 0.3

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil2_CLR\ 0.9 VilVih * Vil2_CLK 0.9 VilVih * Vil2_ENP 0.9 VilVih * Vil2_ENT 0.9 VilVih * Vil2_LOAD\ 0.9 VilVih * Vil2_A 0.9 VilVih * Vil2_B 0.9 VilVih * Vil2_C 0.9 VilVih * Vil2_D 0.9 VilVih * Vil3_CLR\ 1.2 VilVih * Vil3_CLK 1.2 VilVih * Vil3_ENP 1.2 VilVih * Vil3_ENT 1.2 VilVih * Vil3_LOAD\ 1.2 VilVih * Vil3_A 1.2 VilVih * Vil3_B 1.2 VilVih * Vil3_C 1.2 VilVih * Vil3_D 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_CLR\ -1.00E-07 Iin Iil_CLK -1.00E-07 Iin Iil_ENP -1.00E-07 Iin Iil_ENT -1.00E-07 Iin Iil_LOAD\ -1.00E-07 Iin Iil_A -1.00E-07 Iin Iil_B -1.00E-07 Iin Iil_C -1.00E-07 Iin Iil_D -1.00E-07 Iin Iih_CLR\ 1.00E-07 Iin Iih_CLK 1.00E-07 Iin Iih_ENP 1.00E-07 Iin Iih_ENT 1.00E-07 Iin Iih_LOAD\ 1.00E-07 Iin Iih_A 1.00E-07 Iin Iih_B 1.00E-07 Iin Iih_C 1.00E-07 Iin Iih_D 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC161 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23678J R1.0 070606

Customer: Texas Instruments Part Type Tested: 8-Bit Parallel-Out Serial Shift Registers Commercial Part Number: 54HC164 SMD Part Number: 4962-8416201VCA Customer Part Number: 7150024-22 TI Part Number: MPD23678J Lot Number/Date Code: 0720A Wafer Lot Number: 7094007SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23678J (54HC164)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Output N/A N/C 4 Output N/A N/C5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 GND Jumper GND 7 GND Jumper GND8 Clock 1 kOhm 5.5V 8 Clock 1 kOhm GND9 Clear\ 1 kOhm 5.5V 9 Clear\ 1 kOhm GND10 Output N/A N/C 10 Output N/A N/C11 Output N/A N/C 11 Output N/A N/C12 Output N/A N/C 12 Output N/A N/C13 Output N/A N/C 13 Output N/A N/C14 VCC Jumper 5.5V 14 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC164

Inputs High

TID Static Bias Conditions forPart Number 54HC164

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23678J (54HC164)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1QA-1QH) VolVoh Voh1_QA 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2QA-2QH) VolVoh Voh1_QB 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3QA-3QH) VolVoh Voh1_QC 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4QA-4QH) VolVoh Voh1_QD 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5QA-5QH) VolVoh Voh1_QE 1.9 VolVoh Voh1_QF 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\-1B) VolVoh Voh1_QG 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2CLR\-2B) VolVoh Voh1_QH 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\-3B) VolVoh Voh2_QA 4.4 VolVoh Voh2_QB 4.4 VolVoh Voh2_QC 4.4 VolVoh Voh2_QD 4.4 CLK\ = Inverse CLK VolVoh Voh2_QE 4.4 VolVoh Voh2_QF 4.4 VolVoh Voh2_QG 4.4 NOTES VolVoh Voh2_QH 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_QA 5.9 function for VOH and VOL tests. VolVoh Voh3_QB 5.9 VolVoh Voh3_QC 5.9 VolVoh Voh3_QD 5.9 VolVoh Voh3_QE 5.9 VolVoh Voh3_QF 5.9 VolVoh Voh3_QG 5.9 VolVoh VoH3_QH 5.9 VolVoh Voh4_QA 3.98 VolVoh Voh4_QB 3.98 VolVoh Voh4_QC 3.98 VolVoh Voh4_QD 3.98 VolVoh Voh4_QE 3.98 VolVoh Voh4_QF 3.98 VolVoh Voh4_QG 3.98 VolVoh Voh4_QH 3.98 VolVoh Voh5_QA 5.48 VolVoh Voh5_QB 5.48 VolVoh Voh5_QC 5.48 VolVoh Voh5_QD 5.48 VolVoh Voh5_QE 5.48 VolVoh Voh5_QF 5.48 VolVoh Voh5_QG 5.48 VolVoh Voh5_QH 5.48 VolVoh Vol1_QA 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_QB 0.1 VolVoh Vol1_QC 0.1 VolVoh Vol1_QD 0.1 VolVoh Vol1_QE 0.1 VolVoh Vol1_QF 0.1 VolVoh Vol1_QG 0.1 VolVoh Vol1_QH 0.1 VolVoh Vol2_QA 0.1 VolVoh Vol2_QB 0.1 VolVoh Vol2_QC 0.1 VolVoh Vol2_QD 0.1 VolVoh Vol2_QE 0.1 VolVoh Vol2_QF 0.1 VolVoh Vol2_QG 0.1 VolVoh Vol2_QH 0.1 VolVoh Vol3_QA 0.1 VolVoh Vol3_QB 0.1 VolVoh Vol3_QC 0.1 VolVoh Vol3_QD 0.1 VolVoh Vol3_QE 0.1 VolVoh Vol3_QF 0.1 VolVoh Vol3_QG 0.1 VolVoh Vol3_QH 0.1 VolVoh Vol4_QA 0.26 VolVoh Vol4_QB 0.26 VolVoh Vol4_QC 0.26 VolVoh Vol4_QD 0.26 VolVoh Vol4_QE 0.26 VolVoh Vol4_QF 0.26 VolVoh Vol4_QG 0.26 VolVoh Vol4_QH 0.26 VolVoh Vol5_QA 0.26 VolVoh Vol5_QB 0.26 VolVoh Vol5_QC 0.26 VolVoh Vol5_QD 0.26 VolVoh Vol5_QE 0.26 VolVoh Vol5_QF 0.26 VolVoh Vol5_QG 0.26 VolVoh Vol5_QH 0.26 VilVih * Vih1_CLR\ 1.5 VilVih * Vih1_CLK 1.5 VilVih * Vih1_A 1.5 VilVih * Vih1_B 1.5 VilVih * Vih2_CLR\ 3.15 VilVih * Vih2_CLK 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_A 3.15 VilVih * Vih2_B 3.15 VilVih * Vih3_CLR\ 4.2 VilVih * Vih3_CLK 4.2 VilVih * Vih3_A 4.2 VilVih * Vih3_B 4.2 VilVih * Vil1_CLR\ 0.3 VilVih * Vil1_CLK 0.3 VilVih * Vil1_A 0.3 VilVih * Vil1_B 0.3 VilVih * Vil2_CLR\ 0.9 VilVih * Vil2_CLK 0.9 VilVih * Vil2_A 0.9 VilVih * Vil2_B 0.9 VilVih * Vil3_CLR\ 1.2 VilVih * Vil3_CLK 1.2 VilVih * Vil3_A 1.2 VilVih * Vil3_B 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_CLR\ -1.00E-07 Iin Iil_CLK -1.00E-07 Iin Iil_A -1.00E-07 Iin Iil_B -1.00E-07 Iin Iih_CLR\ 1.00E-07 Iin Iih_CLK 1.00E-07 Iin Iih_A 1.00E-07 Iin Iih_B 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC164 to Show Part Markings

Page 124: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23681J R1.0 070606

Customer: Texas Instruments Part Type Tested: 8-Bit Parallel-Load Shift Registers Commercial Part Number: 54HC166 SMD Part Number: 5962-9050101VEA Customer Part Number: 7150024-25 TI Part Number: MPD23681J Lot Number/Date Code: 0721A Wafer Lot Number: 7096358SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

Page 125: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23681J (54HC166)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Serial 1 kOhm 5.5V 1 Serial 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Clock INH 1 kOhm 5.5V 6 Clock INH 1 kOhm GND7 Clock 1 kOhm 5.5V 7 Clock 1 kOhm GND8 GND Jumper GND 8 GND Jumper GND9 Clear\ 1 kOhm 5.5V 9 Clear\ 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Output N/A N/C 13 Output N/A N/C14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Shift/Load\ 1 kOhm 5.5V 15 Shift/Load\ 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC166

Inputs High

TID Static Bias Conditions forPart Number 54HC166

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23681J (54HC166)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs QH) VolVoh Voh1_QH 1.9 2 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs QH) VolVoh Voh2_QH 4.4 4.5 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs QH) VolVoh Voh3_QH 5.9 6 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs QH) VolVoh Voh4_QH 3.98 4.5 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs QH) VolVoh Voh5_QH 5.48 6 VolVoh Vol1_QH 0 0.1 Vil1=0.3V, Vih1=1.5: Vcc=2.0 V (inputs 1CLR\-1H) VolVoh Vol2_QH 0 0.1 Vil2=0.9V, Vih2=3.15: Vcc=4.5 V (inputs 2CLR\-2H) VolVoh Vol3_QH 0 0.1 Vil3=1.2V, Vih3=4.2: Vcc=6.0 V (inputs 3CLR\-3H) VolVoh Vol4_QH 0 0.26 VolVoh Vol5_QH 0 0.26 LD\ = Inverse LD

IilIih Iih_CLR\ 0 1.00E-07 IilIih Iih_SH/LD\ 0 1.00E-07 IilIih Iih_CLKINH 0 1.00E-07 IilIih Iih_CLK 0 1.00E-07 IilIih Iih_SER 0 1.00E-07 IilIih Iih_A 0 1.00E-07 IilIih Iih_B 0 1.00E-07 IilIih Iih_C 0 1.00E-07 IilIih Iih_D 0 1.00E-07 IilIih Iih_E 0 1.00E-07 IilIih Iih_F 0 1.00E-07 IilIih Iih_G 0 1.00E-07 IilIih Iih_H 0 1.00E-07 IilIih Iil_CLR\ 0 -1.00E-07 IilIih Iil_SH/LD\ 0 -1.00E-07 IilIih Iil_CLKINH 0 -1.00E-07 IilIih Iil_CLK 0 -1.00E-07 IilIih Iil_SER 0 -1.00E-07 IilIih Iil_A 0 -1.00E-07 IilIih Iil_B 0 -1.00E-07 IilIih Iil_C 0 -1.00E-07 IilIih Iil_D 0 -1.00E-07 IilIih Iil_E 0 -1.00E-07 IilIih Iil_F 0 -1.00E-07 IilIih Iil_G 0 -1.00E-07 IilIih Iil_H 0 -1.00E-07 Icc Icch 0 8.00E-06 Icc Iccl 0 8.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC166 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23669J R1.0 070606

Customer: Texas Instruments Part Type Tested: Hex D-Type Flip-Flops with Clear Commercial Part Number: 54HC174 SMD Part Number: 5962-8407301VEA Customer Part Number: 7150024-13 TI Part Number: MPD23669J Lot Number/Date Code: 0720A Wafer Lot Number: 7094999SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23669J (54HC174)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Clear\ 1 kOhm 5.5V 1 Clear\ 1 kOhm GND2 Output N/A N/C 2 Output N/A N/C3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Output N/A N/C 7 Output N/A N/C8 GND Jumper GND 8 GND Jumper GND9 Clock 1 kOhm 5.5V 9 Clock 1 kOhm GND10 Output N/A N/C 10 Output N/A N/C11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Output N/A N/C 15 Output N/A N/C16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC174

Inputs High

TID Static Bias Conditions forPart Number 54HC174

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23669J (54HC174) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Q1-1Q6)

VolVoh Voh1_Q1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Q1-2Q6) VolVoh Voh1_Q2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Q1-3Q6) VolVoh Voh1_Q3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Q1-4Q6)VolVoh Voh1_Q4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Q1-5Q6)VolVoh Voh1_Q5 1.9 VolVoh Voh1_Q6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\-1D6) VolVoh Voh2_Q1 4.4 Vil2, Vih2: Vcc=4.5 V (inputs 2CLR\-2D6) VolVoh Voh2_Q2 4.4 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\-3D6) VolVoh Voh2_Q3 4.4 VolVoh Voh2_Q4 4.4 VolVoh Voh2_Q5 4.4 VolVoh Voh2_Q6 4.4 CLR\ = Inverse CLR VolVoh Voh3_Q1 5.9 VolVoh Voh3_Q2 5.9 VolVoh Voh3_Q3 5.9 NOTES VolVoh Voh3_Q4 5.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Q5 5.9 function for VOH and VOL tests. VolVoh Voh3_Q6 5.9 VolVoh Voh4_Q1 3.7 VolVoh Voh4_Q2 3.7 VolVoh Voh4_Q3 3.7 VolVoh Voh4_Q4 3.7 VolVoh Voh4_Q5 3.7 VolVoh Voh4_Q6 3.7 VolVoh Voh5_Q1 5.2 VolVoh Voh5_Q2 5.2 VolVoh Voh5_Q3 5.2 VolVoh Voh5_Q4 5.2 VolVoh Voh5_Q5 5.2 VolVoh Voh5_Q6 5.2 VolVoh Vol1_Q1 0.1 VolVoh Vol1_Q2 0.1 VolVoh Vol1_Q3 0.1 VolVoh Vol1_Q4 0.1 VolVoh Vol1_Q5 0.1 VolVoh Vol1_Q6 0.1 VolVoh Vol2_Q1 0.1 VolVoh Vol2_Q2 0.1 VolVoh Vol2_Q3 0.1 VolVoh Vol2_Q4 0.1 VolVoh Vol2_Q5 0.1 VolVoh Vol2_Q6 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol3_Q1 0.1 VolVoh Vol3_Q2 0.1 VolVoh Vol3_Q3 0.1 VolVoh Vol3_Q4 0.1 VolVoh Vol3_Q5 0.1 VolVoh Vol3_Q6 0.1 VolVoh Vol4_Q1 0.4 VolVoh Vol4_Q2 0.4 VolVoh Vol4_Q3 0.4 VolVoh Vol4_Q4 0.4 VolVoh Vol4_Q5 0.4 VolVoh Vol4_Q6 0.4 VolVoh Vol5_Q1 0.4 VolVoh Vol5_Q2 0.4 VolVoh Vol5_Q3 0.4 VolVoh Vol5_Q4 0.4 VolVoh Vol5_Q5 0.4 VolVoh Vol5_Q6 0.4 VilVih * Vih1_CLR\ 1.5 VilVih * Vih1_CLK 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih1_D3 1.5 VilVih * Vih1_D4 1.5 VilVih * Vih1_D5 1.5 VilVih * Vih1_D6 1.5 VilVih * Vih2_CLR\ 3.15 VilVih * Vih2_CLK 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih2_D3 3.15 VilVih * Vih2_D4 3.15 VilVih * Vih2_D5 3.15 VilVih * Vih2_D6 3.15 VilVih * Vih3_CLR\ 4.2 VilVih * Vih3_CLK 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vih3_D3 4.2 VilVih * Vih3_D4 4.2 VilVih * Vih3_D5 4.2 VilVih * Vih3_D6 4.2 VilVih * Vil1_CLR\ 0.3 VilVih * Vil1_CLK 0.3 VilVih * Vil1_D1 0.3

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil1_D2 0.3 VilVih * Vil1_D3 0.3 VilVih * Vil1_D4 0.3 VilVih * Vil1_D5 0.3 VilVih * Vil1_D6 0.3 VilVih * Vil2_CLR\ 0.9 VilVih * Vil2_CLK 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil2_D3 0.9 VilVih * Vil2_D4 0.9 VilVih * Vil2_D5 0.9 VilVih * Vil2_D6 0.9 VilVih * Vil3_CLR\ 1.2 VilVih * Vil3_CLK 1.2 VilVih * Vil3_D1 1.2 VilVih * Vil3_D2 1.2 VilVih * Vil3_D3 1.2 VilVih * Vil3_D4 1.2 VilVih * Vil3_D5 1.2 VilVih * Vil3_D6 1.2

Icc Icc_Vdd 1.60E-04 Icc Icc_Vss 1.60E-04 Iin Iil_CLR\ -1.00E-06 Iin Iil_CLK -1.00E-06 Iin Iil_D1 -1.00E-06 Iin Iil_D2 -1.00E-06 Iin Iil_D3 -1.00E-06 Iin Iil_D4 -1.00E-06 Iin Iil_D5 -1.00E-06 Iin Iil_D6 -1.00E-06 Iin Iih_CLR\ 1.00E-06 Iin Iih_CLK 1.00E-06 Iin Iih_D1 1.00E-06 Iin Iih_D2 1.00E-06 Iin Iih_D3 1.00E-06 Iin Iih_D4 1.00E-06 Iin Iih_D5 1.00E-06 Iin Iih_D6 1.00E-06

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC174 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23674J R1.0 070606

Customer: Texas Instruments Part Type Tested: Octal Buffers and Line Drivers with 3-State Outputs Commercial Part Number: 54HC244 SMD Part Number: 5962-8409601VRA Customer Part Number: 7150024-18 TI Part Number: MPD23674J Lot Number/Date Code: 0721A Wafer Lot Number: 7093857SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23674J (54HC244)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 1 Output Enable\ 1 kOhm 5.5V 1 1 Output Enable\ 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Output N/A N/C 3 Output N/A N/C4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Output N/A N/C 7 Output N/A N/C8 Input 1 kOhm 5.5V 8 Input 1 kOhm GND9 Output N/A N/C 9 Output N/A N/C

10 GND Jumper GND 10 GND Jumper GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Output N/A N/C 14 Output N/A N/C15 Input 1 kOhm 5.5V 15 Input 1 kOhm GND16 Output N/A N/C 16 Output N/A N/C17 Input 1 kOhm 5.5V 17 Input 1 kOhm GND18 Output N/A N/C 18 Output N/A N/C19 2 Output Enable\ 1 kOhm 5.5V 19 2 Output Enable\ 1 kOhm GND20 VCC Jumper 5.5V 20 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC244

Inputs High

TID Static Bias Conditions forPart Number 54HC244

Inputs Low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23674J (54HC244)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y1-1Y4) VolVoh Voh1_1Y1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y1-2Y4) VolVoh Voh1_1Y2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y1-3Y4) VolVoh Voh1_1Y3 1.9 Vol4, Voh4: Ioh=6.0 mA, Vcc=4.5 V (outputs 4Y1-4Y4) VolVoh Voh1_1Y4 1.9 Vol5, Voh5: Ioh=7.8 mA, Vcc=6.0 V (outputs 5Y1-5Y4) VolVoh Voh1_2Y1 1.9 VolVoh Voh1_2Y2 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1OE\-1-2A4) VolVoh Voh1_2Y3 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2OE\1-2-2A4) VolVoh Voh1_2Y4 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3OE\1-3-2A4) VolVoh Voh2_1Y1 4.4 Vi3: Vcc=6.0 V VolVoh Voh2_1Y2 4.4 VolVoh Voh2_1Y3 4.4 VolVoh Voh2_1Y4 4.4 OE\ = Inverse OE VolVoh Voh2_2Y1 4.4 VolVoh Voh2_2Y2 4.4 NOTES VolVoh Voh2_2Y3 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh2_2Y4 4.4 function for VOH and VOL tests. VolVoh Voh3_1Y1 5.9 VolVoh Voh3_1Y2 5.9 VolVoh Voh3_1Y3 5.9 VolVoh Voh3_1Y4 5.9 VolVoh Voh3_2Y1 5.9 VolVoh Voh3_2Y2 5.9 VolVoh Voh3_2Y3 5.9 VolVoh Voh3_2Y4 5.9 VolVoh Voh4_1Y1 3.98 VolVoh Voh4_1Y2 3.98 VolVoh Voh4_1Y3 3.98 VolVoh Voh4_1Y4 3.98 VolVoh Voh4_2Y1 3.98 VolVoh Voh4_2Y2 3.98 VolVoh Voh4_2Y3 3.98 VolVoh Voh4_2Y4 3.98 VolVoh Voh5_1Y1 5.48 VolVoh Voh5_1Y2 5.48 VolVoh Voh5_1Y3 5.48 VolVoh Voh5_1Y4 5.48 VolVoh Voh5_2Y1 5.48 VolVoh Voh5_2Y2 5.48 VolVoh Voh5_2Y3 5.48 VolVoh Voh5_2Y4 5.48 VolVoh Vol1_1Y1 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_1Y2 0.1 VolVoh Vol1_1Y3 0.1 VolVoh Vol1_1Y4 0.1 VolVoh Vol1_2Y1 0.1 VolVoh Vol1_2Y2 0.1 VolVoh Vol1_2Y3 0.1 VolVoh Vol1_2Y4 0.1 VolVoh Vol2_1Y1 0.1 VolVoh Vol2_1Y2 0.1 VolVoh Vol2_1Y3 0.1 VolVoh Vol2_1Y4 0.1 VolVoh Vol2_2Y1 0.1 VolVoh Vol2_2Y2 0.1 VolVoh Vol2_2Y3 0.1 VolVoh Vol2_2Y4 0.1 VolVoh Vol3_1Y1 0.1 VolVoh Vol3_1Y2 0.1 VolVoh Vol3_1Y3 0.1 VolVoh Vol3_1Y4 0.1 VolVoh Vol3_2Y1 0.1 VolVoh Vol3_2Y2 0.1 VolVoh Vol3_2Y3 0.1 VolVoh Vol3_2Y4 0.1 VolVoh Vol4_1Y1 0.26 VolVoh Vol4_1Y2 0.26 VolVoh Vol4_1Y3 0.26 VolVoh Vol4_1Y4 0.26 VolVoh Vol4_2Y1 0.26 VolVoh Vol4_2Y2 0.26 VolVoh Vol4_2Y3 0.26 VolVoh Vol4_2Y4 0.26 VolVoh Vol5_1Y1 0.26 VolVoh Vol5_1Y2 0.26 VolVoh Vol5_1Y3 0.26 VolVoh Vol5_1Y4 0.26 VolVoh Vol5_2Y1 0.26 VolVoh Vol5_2Y2 0.26 VolVoh Vol5_2Y3 0.26 VolVoh Vol5_2Y4 0.26 VilVih * Vih1_OE\1 1.5 VilVih * Vih1_OE\2 1.5 VilVih * Vih1_1A1 1.5 VilVih * Vih1_1A2 1.5 VilVih * Vih1_1A3 1.5 VilVih * Vih1_1A4 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_2A1 1.5 VilVih * Vih1_2A2 1.5 VilVih * Vih1_2A3 1.5 VilVih * Vih1_2A4 1.5 VilVih * Vih2_OE\1 3.15 VilVih * Vih2_OE\2 3.15 VilVih * Vih2_1A1 3.15 VilVih * Vih2_1A2 3.15 VilVih * Vih2_1A3 3.15 VilVih * Vih2_1A4 3.15 VilVih * Vih2_2A1 3.15 VilVih * Vih2_2A2 3.15 VilVih * Vih2_2A3 3.15 VilVih * Vih2_2A4 3.15 VilVih * Vih3_OE\1 4.2 VilVih * Vih3_OE\2 4.2 VilVih * Vih3_1A1 4.2 VilVih * Vih3_1A2 4.2 VilVih * Vih3_1A3 4.2 VilVih * Vih3_1A4 4.2 VilVih * Vih3_2A1 4.2 VilVih * Vih3_2A2 4.2 VilVih * Vih3_2A3 4.2 VilVih * Vih3_2A4 4.2 VilVih * Vil1_OE\1 0.3 VilVih * Vil1_OE\2 0.3 VilVih * Vil1_1A1 0.3 VilVih * Vil1_1A2 0.3 VilVih * Vil1_1A3 0.3 VilVih * Vil1_1A4 0.3 VilVih * Vil1_2A1 0.3 VilVih * Vil1_2A2 0.3 VilVih * Vil1_2A3 0.3 VilVih * Vil1_2A4 0.3 VilVih * Vil2_OE\1 0.9 VilVih * Vil2_OE\2 0.9 VilVih * Vil2_1A1 0.9 VilVih * Vil2_1A2 0.9 VilVih * Vil2_1A3 0.9 VilVih * Vil2_1A4 0.9 VilVih * Vil2_2A1 0.9 VilVih * Vil2_2A2 0.9 VilVih * Vil2_2A3 0.9 VilVih * Vil2_2A4 0.9 VilVih * Vil3_OE\1 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_OE\2 1.2 VilVih * Vil3_1A1 1.2 VilVih * Vil3_1A2 1.2 VilVih * Vil3_1A3 1.2 VilVih * Vil3_1A4 1.2 VilVih * Vil3_2A1 1.2 VilVih * Vil3_2A2 1.2 VilVih * Vil3_2A3 1.2 VilVih * Vil3_2A4 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_OE\1 -1.00E-07 Iin Iil_OE\2 -1.00E-07 Iin Iil_1A1 -1.00E-07 Iin Iil_1A2 -1.00E-07 Iin Iil_1A3 -1.00E-07 Iin Iil_1A4 -1.00E-07 Iin Iil_2A1 -1.00E-07 Iin Iil_2A2 -1.00E-07 Iin Iil_2A3 -1.00E-07 Iin Iil_2A4 -1.00E-07 Iin Iih_OE\1 1.00E-07 Iin Iih_OE\2 1.00E-07 Iin Iih_1A1 1.00E-07 Iin Iih_1A2 1.00E-07 Iin Iih_1A3 1.00E-07 Iin Iih_1A4 1.00E-07 Iin Iih_2A1 1.00E-07 Iin Iih_2A2 1.00E-07 Iin Iih_2A3 1.00E-07 Iin Iih_2A4 1.00E-07 Ioz Iozl_1Y1 -5.00E-07 Ioz Iozl_1Y2 -5.00E-07 Ioz Iozl_1Y3 -5.00E-07 Ioz Iozl_1Y4 -5.00E-07 Ioz Iozl_2Y1 -5.00E-07 Ioz Iozl_2Y2 -5.00E-07 Ioz Iozl_2Y3 -5.00E-07 Ioz Iozl_2Y4 -5.00E-07 Ioz Iozh_1Y1 5.00E-07 Ioz Iozh_1Y2 5.00E-07 Ioz Iozh_1Y3 5.00E-07 Ioz Iozh_1Y4 5.00E-07 Ioz Iozh_2Y1 5.00E-07 Ioz Iozh_2Y2 5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Ioz Iozh_2Y3 5.00E-07 Ioz Iozh_2Y4 5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC244 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23671J R1.0 070606

Customer: Texas Instruments Part Type Tested: Octal Bus Transceivers with 3-State Outputs Commercial Part Number: 54HC245 SMD Part Number: 5962-8408501VRA Customer Part Number: 7150024-15 TI Part Number: MPD23671J Lot Number/Date Code: 0721A Wafer Lot Number: 7094004SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23671J (54HC245)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Direction Control 1 kOhm 5.5V 1 Direction Control 1 kOhm 5.5V2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Input 1 kOhm 5.5V 5 Input 1 kOhm GND6 Input 1 kOhm 5.5V 6 Input 1 kOhm GND7 Input 1 kOhm 5.5V 7 Input 1 kOhm GND8 Input 1 kOhm 5.5V 8 Input 1 kOhm GND9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 GND Jumper GND 10 GND Jumper GND11 Output N/A N/C 11 Output N/A N/C12 Output N/A N/C 12 Output N/A N/C13 Output N/A N/C 13 Output N/A N/C14 Output N/A N/C 14 Output N/A N/C15 Output N/A N/C 15 Output N/A N/C16 Output N/A N/C 16 Output N/A N/C17 Output N/A N/C 17 Output N/A N/C18 Output N/A N/C 18 Output N/A N/C19 Output Enable\ 1 kOhm GND 19 Output Enable\ 1 kOhm GND20 VCC Jumper 5.5V 20 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC245

Inputs High

TID Static Bias Conditions forPart Number 54HC245

Inputs Low

Direction Control set High setting A as input and B as output for both bias conditions (See Figure 3 in the SMD)

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23671J (54HC245)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1A1-1B8) VolVoh Voh1_A1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2A1-2B8) VolVoh Voh1_A2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3A1-3B8) VolVoh Voh1_A3 1.9 Vol4, Voh4: Ioh=6.0 mA, Vcc=4.5 V (outputs 4A1-4B8) VolVoh Voh1_A4 1.9 Vol5, Voh5: Ioh=7.8 mA, Vcc=6.0 V (outputs 5A1-5B8) VolVoh Voh1_A5 1.9 VolVoh Voh1_A6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1DIR-1B8) VolVoh Voh1_A7 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2DIR-2B8) VolVoh Voh1_A8 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3DIR-3B8) VolVoh Voh1_B1 1.9 VolVoh Voh1_B2 1.9 VolVoh Voh1_B3 1.9 OE\ = Inverse OE VolVoh Voh1_B4 1.9 VolVoh Voh1_B5 1.9 NOTES VolVoh Voh1_B6 1.9 * Tests shall be guaranteed if applied as a forcing VolVoh Voh1_B7 1.9 function for VOH and VOL tests. VolVoh Voh1_B8 1.9 VolVoh Voh2_A1 4.4 VolVoh Voh2_A2 4.4 VolVoh Voh2_A3 4.4 VolVoh Voh2_A4 4.4 VolVoh Voh2_A5 4.4 VolVoh Voh2_A6 4.4 VolVoh Voh2_A7 4.4 VolVoh Voh2_A8 4.4 VolVoh Voh2_B1 4.4 VolVoh Voh2_B2 4.4 VolVoh Voh2_B3 4.4 VolVoh Voh2_B4 4.4 VolVoh Voh2_B5 4.4 VolVoh Voh2_B6 4.4 VolVoh Voh2_B7 4.4 VolVoh Voh2_B8 4.4 VolVoh Voh3_A1 5.9 VolVoh Voh3_A2 5.9 VolVoh Voh3_A3 5.9 VolVoh Voh3_A4 5.9 VolVoh Voh3_A5 5.9 VolVoh Voh3_A6 5.9 VolVoh Voh3_A7 5.9 VolVoh Voh3_A8 5.9 VolVoh Voh3_B1 5.9

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Voh3_B2 5.9 VolVoh Voh3_B3 5.9 VolVoh Voh3_B4 5.9 VolVoh Voh3_B5 5.9 VolVoh Voh3_B6 5.9 VolVoh Voh3_B7 5.9 VolVoh Voh3_B8 5.9 VolVoh Voh4_A1 3.98 VolVoh Voh4_A2 3.98 VolVoh Voh4_A3 3.98 VolVoh Voh4_A4 3.98 VolVoh Voh4_A5 3.98 VolVoh Voh4_A6 3.98 VolVoh Voh4_A7 3.98 VolVoh Voh4_A8 3.98 VolVoh Voh4_B1 3.98 VolVoh Voh4_B2 3.98 VolVoh Voh4_B3 3.98 VolVoh Voh4_B4 3.98 VolVoh Voh4_B5 3.98 VolVoh Voh4_B6 3.98 VolVoh Voh4_B7 3.98 VolVoh Voh4_B8 3.98 VolVoh Voh5_A1 5.48 VolVoh Voh5_A2 5.48 VolVoh Voh5_A3 5.48 VolVoh Voh5_A4 5.48 VolVoh Voh5_A5 5.48 VolVoh Voh5_A6 5.48 VolVoh Voh5_A7 5.48 VolVoh Voh5_A8 5.48 VolVoh Voh5_B1 5.48 VolVoh Voh5_B2 5.48 VolVoh Voh5_B3 5.48 VolVoh Voh5_B4 5.48 VolVoh Voh5_B5 5.48 VolVoh Voh5_B6 5.48 VolVoh Voh5_B7 5.48 VolVoh Voh5_B8 5.48 VolVoh Vol1_A1 0.1 VolVoh Vol1_A2 0.1 VolVoh Vol1_A3 0.1 VolVoh Vol1_A4 0.1 VolVoh Vol1_A5 0.1 VolVoh Vol1_A6 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_A7 0.1 VolVoh Vol1_A8 0.1 VolVoh Vol1_B1 0.1 VolVoh Vol1_B2 0.1 VolVoh Vol1_B3 0.1 VolVoh Vol1_B4 0.1 VolVoh Vol1_B5 0.1 VolVoh Vol1_B6 0.1 VolVoh Vol1_B7 0.1 VolVoh Vol1_B8 0.1 VolVoh Vol2_A1 0.1 VolVoh Vol2_A2 0.1 VolVoh Vol2_A3 0.1 VolVoh Vol2_A4 0.1 VolVoh Vol2_A5 0.1 VolVoh Vol2_A6 0.1 VolVoh Vol2_A7 0.1 VolVoh Vol2_A8 0.1 VolVoh Vol2_B1 0.1 VolVoh Vol2_B2 0.1 VolVoh Vol2_B3 0.1 VolVoh Vol2_B4 0.1 VolVoh Vol2_B5 0.1 VolVoh Vol2_B6 0.1 VolVoh Vol2_B7 0.1 VolVoh Vol2_B8 0.1 VolVoh Vol3_A1 0.1 VolVoh Vol3_A2 0.1 VolVoh Vol3_A3 0.1 VolVoh Vol3_A4 0.1 VolVoh Vol3_A5 0.1 VolVoh Vol3_A6 0.1 VolVoh Vol3_A7 0.1 VolVoh Vol3_A8 0.1 VolVoh Vol3_B1 0.1 VolVoh Vol3_B2 0.1 VolVoh Vol3_B3 0.1 VolVoh Vol3_B4 0.1 VolVoh Vol3_B5 0.1 VolVoh Vol3_B6 0.1 VolVoh Vol3_B7 0.1 VolVoh Vol3_B8 0.1 VolVoh Vol4_A1 0.26 VolVoh Vol4_A2 0.26 VolVoh Vol4_A3 0.26

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol4_A4 0.26 VolVoh Vol4_A5 0.26 VolVoh Vol4_A6 0.26 VolVoh Vol4_A7 0.26 VolVoh Vol4_A8 0.26 VolVoh Vol4_B1 0.26 VolVoh Vol4_B2 0.26 VolVoh Vol4_B3 0.26 VolVoh Vol4_B4 0.26 VolVoh Vol4_B5 0.26 VolVoh Vol4_B6 0.26 VolVoh Vol4_B7 0.26 VolVoh Vol4_B8 0.26 VolVoh Vol5_A1 0.26 VolVoh Vol5_A2 0.26 VolVoh Vol5_A3 0.26 VolVoh Vol5_A4 0.26 VolVoh Vol5_A5 0.26 VolVoh Vol5_A6 0.26 VolVoh Vol5_A7 0.26 VolVoh Vol5_A8 0.26 VolVoh Vol5_B1 0.26 VolVoh Vol5_B2 0.26 VolVoh Vol5_B3 0.26 VolVoh Vol5_B4 0.26 VolVoh Vol5_B5 0.26 VolVoh Vol5_B6 0.26 VolVoh Vol5_B7 0.26 VolVoh Vol5_B8 0.26 VilVih * Vih1_DIR 1.5 VilVih * Vih1_OE\ 1.5 VilVih * Vih1_A1 1.5 VilVih * Vih1_A2 1.5 VilVih * Vih1_A3 1.5 VilVih * Vih1_A4 1.5 VilVih * Vih1_A5 1.5 VilVih * Vih1_A6 1.5 VilVih * Vih1_A7 1.5 VilVih * Vih1_A8 1.5 VilVih * Vih1_B1 1.5 VilVih * Vih1_B2 1.5 VilVih * Vih1_B3 1.5 VilVih * Vih1_B4 1.5 VilVih * Vih1_B5 1.5 VilVih * Vih1_B6 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_B7 1.5 VilVih * Vih1_B8 1.5 VilVih * Vih2_DIR 3.15 VilVih * Vih2_OE\ 3.15 VilVih * Vih2_A1 3.15 VilVih * Vih2_A2 3.15 VilVih * Vih2_A3 3.15 VilVih * Vih2_A4 3.15 VilVih * Vih2_A5 3.15 VilVih * Vih2_A6 3.15 VilVih * Vih2_A7 3.15 VilVih * Vih2_A8 3.15 VilVih * Vih2_B1 3.15 VilVih * Vih2_B2 3.15 VilVih * Vih2_B3 3.15 VilVih * Vih2_B4 3.15 VilVih * Vih2_B5 3.15 VilVih * Vih2_B6 3.15 VilVih * Vih2_B7 3.15 VilVih * Vih2_B8 3.15 VilVih * Vih3_DIR 4.2 VilVih * Vih3_OE\ 4.2 VilVih * Vih3_A1 4.2 VilVih * Vih3_A2 4.2 VilVih * Vih3_A3 4.2 VilVih * Vih3_A4 4.2 VilVih * Vih3_A5 4.2 VilVih * Vih3_A6 4.2 VilVih * Vih3_A7 4.2 VilVih * Vih3_A8 4.2 VilVih * Vih3_B1 4.2 VilVih * Vih3_B2 4.2 VilVih * Vih3_B3 4.2 VilVih * Vih3_B4 4.2 VilVih * Vih3_B5 4.2 VilVih * Vih3_B6 4.2 VilVih * Vih3_B7 4.2 VilVih * Vih3_B8 4.2 VilVih * Vil1_DIR 0.3 VilVih * Vil1_OE\ 0.3 VilVih * Vil1_A1 0.3 VilVih * Vil1_A2 0.3 VilVih * Vil1_A3 0.3 VilVih * Vil1_A4 0.3 VilVih * Vil1_A5 0.3

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil1_A6 0.3 VilVih * Vil1_A7 0.3 VilVih * Vil1_A8 0.3 VilVih * Vil1_B1 0.3 VilVih * Vil1_B2 0.3 VilVih * Vil1_B3 0.3 VilVih * Vil1_B4 0.3 VilVih * Vil1_B5 0.3 VilVih * Vil1_B6 0.3 VilVih * Vil1_B7 0.3 VilVih * Vil1_B8 0.3 VilVih * Vil2_DIR 0.9 VilVih * Vil2_OE\ 0.9 VilVih * Vil2_A1 0.9 VilVih * Vil2_A2 0.9 VilVih * Vil2_A3 0.9 VilVih * Vil2_A4 0.9 VilVih * Vil2_A5 0.9 VilVih * Vil2_A6 0.9 VilVih * Vil2_A7 0.9 VilVih * Vil2_A8 0.9 VilVih * Vil2_B1 0.9 VilVih * Vil2_B2 0.9 VilVih * Vil2_B3 0.9 VilVih * Vil2_B4 0.9 VilVih * Vil2_B5 0.9 VilVih * Vil2_B6 0.9 VilVih * Vil2_B7 0.9 VilVih * Vil2_B8 0.9 VilVih * Vil3_DIR 1.2 VilVih * Vil3_OE\ 1.2 VilVih * Vil3_A1 1.2 VilVih * Vil3_A2 1.2 VilVih * Vil3_A3 1.2 VilVih * Vil3_A4 1.2 VilVih * Vil3_A5 1.2 VilVih * Vil3_A6 1.2 VilVih * Vil3_A7 1.2 VilVih * Vil3_A8 1.2 VilVih * Vil3_B1 1.2 VilVih * Vil3_B2 1.2 VilVih * Vil3_B3 1.2 VilVih * Vil3_B4 1.2 VilVih * Vil3_B5 1.2 VilVih * Vil3_B6 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_B7 1.2 VilVih * Vil3_B8 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_DIR -1.00E-07 Iin Iil_OE\ -1.00E-07 Iin Iil_A1 -1.00E-07 Iin Iil_A2 -1.00E-07 Iin Iil_A3 -1.00E-07 Iin Iil_A4 -1.00E-07 Iin Iil_A5 -1.00E-07 Iin Iil_A6 -1.00E-07 Iin Iil_A7 -1.00E-07 Iin Iil_A8 -1.00E-07 Iin Iil_B1 -1.00E-07 Iin Iil_B2 -1.00E-07 Iin Iil_B3 -1.00E-07 Iin Iil_B4 -1.00E-07 Iin Iil_B5 -1.00E-07 Iin Iil_B6 -1.00E-07 Iin Iil_B7 -1.00E-07 Iin Iil_B8 -1.00E-07 Iin Iih_DIR 1.00E-07 Iin Iih_OE\ 1.00E-07 Iin Iih_A1 1.00E-07 Iin Iih_A2 1.00E-07 Iin Iih_A3 1.00E-07 Iin Iih_A4 1.00E-07 Iin Iih_A5 1.00E-07 Iin Iih_A6 1.00E-07 Iin Iih_A7 1.00E-07 Iin Iih_A8 1.00E-07 Iin Iih_B1 1.00E-07 Iin Iih_B2 1.00E-07 Iin Iih_B3 1.00E-07 Iin Iih_B4 1.00E-07 Iin Iih_B5 1.00E-07 Iin Iih_B6 1.00E-07 Iin Iih_B7 1.00E-07 Iin Iih_B8 1.00E-07 Ioz Iozl_A1 -5.00E-07 Ioz Iozl_A2 -5.00E-07 Ioz Iozl_A3 -5.00E-07 Ioz Iozl_A4 -5.00E-07 Ioz Iozl_A5 -5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Ioz Iozl_A6 -5.00E-07 Ioz Iozl_A7 -5.00E-07 Ioz Iozl_A8 -5.00E-07 Ioz Iozl_B1 -5.00E-07 Ioz Iozl_B2 -5.00E-07 Ioz Iozl_B3 -5.00E-07 Ioz Iozl_B4 -5.00E-07 Ioz Iozl_B5 -5.00E-07 Ioz Iozl_B6 -5.00E-07 Ioz Iozl_B7 -5.00E-07 Ioz Iozl_B8 -5.00E-07 Ioz Iozh_A1 5.00E-07 Ioz Iozh_A2 5.00E-07 Ioz Iozh_A3 5.00E-07 Ioz Iozh_A4 5.00E-07 Ioz Iozh_A5 5.00E-07 Ioz Iozh_A6 5.00E-07 Ioz Iozh_A7 5.00E-07 Ioz Iozh_A8 5.00E-07 Ioz Iozh_B1 5.00E-07 Ioz Iozh_B2 5.00E-07 Ioz Iozh_B3 5.00E-07 Ioz Iozh_B4 5.00E-07 Ioz Iozh_B5 5.00E-07 Ioz Iozh_B6 5.00E-07 Ioz Iozh_B7 5.00E-07 Ioz Iozh_B8 5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC245 to Show Part Markings

Page 153: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23679J R1.0 070606

Customer: Texas Instruments Part Type Tested: Data Selectors/Multiplexers with 3-State Outputs Commercial Part Number: 54HC251 SMD Part Number: 5962-8512501VEA Customer Part Number: 7150024-23 TI Part Number: MPD23679J Lot Number/Date Code: 0721A Wafer Lot Number: 7096356SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

Page 154: Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for … · 2008. 4. 16. · Radiation Lot Acceptance Testing (RLAT) Of 54HCxx Devices for Texas Instruments 1.0. Overview

Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23679J (54HC251)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Input 1 kOhm 5.5V 1 Input 1 kOhm GND2 Input 1 kOhm 5.5V 2 Input 1 kOhm GND3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 Output-Enable\ 1 kOhm 5.5V 7 Output-Enable\ 1 kOhm GND8 GND Jumper GND 8 GND Jumper GND9 Input 1 kOhm 5.5V 9 Input 1 kOhm GND10 Input 1 kOhm 5.5V 10 Input 1 kOhm GND11 Input 1 kOhm 5.5V 11 Input 1 kOhm GND12 Input 1 kOhm 5.5V 12 Input 1 kOhm GND13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Input 1 kOhm 5.5V 15 Input 1 kOhm GND16 VCC Jumper 5.5V 16 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC251

Inputs High

TID Static Bias Conditions forPart Number 54HC251

Inputs low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23679J (54HC251)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Y-1W) VolVoh Voh1_Y 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Y-2W) VolVoh Voh1_W 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Y-3W) VolVoh Voh2_Y 4.4 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Y-4W) VolVoh Voh2_W 4.4 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Y-5W) VolVoh Voh3_Y 5.9 VolVoh Voh3_W 5.9 Vil1, Vih1: Vcc=2.0 V (inputs 1OE\-1D8) VolVoh Voh4_Y 3.7 Vil2, Vih2: Vcc=4.5 V (inputs 2OE\-2D8) VolVoh Voh4_W 3.7 Vil3, Vih3: Vcc=6.0 V (inputs 3OE\-3D8) VolVoh Voh5_Y 5.2 VolVoh Voh5_W 5.2 OE\ = Inverse OE VolVoh Vol1_Y 0.1 VolVoh Vol1_W 0.1 NOTES VolVoh Vol2_Y 0.1 * Tests shall be guaranteed if applied as a forcing VolVoh Vol2_W 0.1 function for VOH and VOL tests. VolVoh Vol3_Y 0.1 VolVoh Vol3_W 0.1 VolVoh Vol4_Y 0.4 VolVoh Vol4_W 0.4 VolVoh Vol5_Y 0.4 VolVoh Vol5_W 0.4 VilVih * Vih1_OE\ 1.5 VilVih * Vih1_A 1.5 VilVih * Vih1_B 1.5 VilVih * Vih1_C 1.5 VilVih * Vih1_D0 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih1_D3 1.5 VilVih * Vih1_D4 1.5 VilVih * Vih1_D5 1.5 VilVih * Vih1_D6 1.5 VilVih * Vih1_D7 1.5 VilVih * Vih2_OE\ 3.15 VilVih * Vih2_A 3.15 VilVih * Vih2_B 3.15 VilVih * Vih2_C 3.15 VilVih * Vih2_D0 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih2_D3 3.15 VilVih * Vih2_D4 3.15

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih2_D5 3.15 VilVih * Vih2_D6 3.15 VilVih * Vih2_D7 3.15 VilVih * Vih3_COE\ 4.2 VilVih * Vih3_A 4.2 VilVih * Vih3_B 4.2 VilVih * Vih3_C 4.2 VilVih * Vih3_D0 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vih3_D3 4.2 VilVih * Vih3_D4 4.2 VilVih * Vih3_D5 4.2 VilVih * Vih3_D6 4.2 VilVih * Vih3_D7 4.2 VilVih * Vil1_OE\ 0.3 VilVih * Vil1_A 0.3 VilVih * Vil1_B 0.3 VilVih * Vil1_C 0.3 VilVih * Vil1_D0 0.3 VilVih * Vil1_D1 0.3 VilVih * Vil1_D2 0.3 VilVih * Vil1_D3 0.3 VilVih * Vil1_D4 0.3 VilVih * Vil1_D5 0.3 VilVih * Vil1_D6 0.3 VilVih * Vil1_D7 0.3 VilVih * Vil2_OE\ 0.9 VilVih * Vil2_A 0.9 VilVih * Vil2_B 0.9 VilVih * Vil2_C 0.9 VilVih * Vil2_D0 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil2_D3 0.9 VilVih * Vil2_D4 0.9 VilVih * Vil2_D5 0.9 VilVih * Vil2_D6 0.9 VilVih * Vil2_D7 0.9 VilVih * Vil3_OE\ 1.2 VilVih * Vil3_A 1.2 VilVih * Vil3_B 1.2 VilVih * Vil3_C 1.2 VilVih * Vil3_D0 1.2 VilVih * Vil3_D1 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_D2 1.2 VilVih * Vil3_D3 1.2 VilVih * Vil3_D4 1.2 VilVih * Vil3_D5 1.2 VilVih * Vil3_D6 1.2 VilVih * Vil3_D7 1.2

Icc Icc_Vdd 1.60E-04 Icc Icc_Vss 1.60E-04 Iin Iil_OE\ -1.00E-06 Iin Iil_A -1.00E-06 Iin Iil_B -1.00E-06 Iin Iil_C -1.00E-06 Iin Iil_D0 -1.00E-06 Iin Iil_D1 -1.00E-06 Iin Iil_D2 -1.00E-06 Iin Iil_D3 -1.00E-06 Iin Iil_D4 -1.00E-06 Iin Iil_D5 -1.00E-06 Iin Iil_D6 -1.00E-06 Iin Iil_D7 -1.00E-06 Iin Iih_OE\ 1.00E-06 Iin Iih_A 1.00E-06 Iin Iih_B 1.00E-06 Iin Iih_C 1.00E-06 Iin Iih_D0 1.00E-06 Iin Iih_D1 1.00E-06 Iin Iih_D2 1.00E-06 Iin Iih_D3 1.00E-06 Iin Iih_D4 1.00E-06 Iin Iih_D5 1.00E-06 Iin Iih_D6 1.00E-06 Iin Iih_D7 1.00E-06 Ioz Iozl_Y -1.00E-05 Ioz Iozl_W -1.00E-05 Ioz Iozh_Y 1.00E-05 Ioz Iozh_W 1.00E-05

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC251 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23676J R1.0 070606

Customer: Texas Instruments Part Type Tested: Octal D-Type Flip-Flops with Clear Commercial Part Number: 54HC273 SMD Part Number: 5962-8409901VRA Customer Part Number: 7150024-20 TI Part Number: MPD23676J Lot Number/Date Code: 0720A Wafer Lot Number: 7095091SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23676J (54HC273)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Clear\ 1 kOhm 5.5V 1 Clear\ 1 kOhm GND2 Output N/A N/C 2 Output N/A N/C3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 Input 1 kOhm 5.5V 7 Input 1 kOhm GND8 Input 1 kOhm 5.5V 8 Input 1 kOhm GND9 Output N/A N/C 9 Output N/A N/C

10 GND Jumper GND 10 GND Jumper GND11 Clock 1 kOhm 5.5V 11 Clock 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Output N/A N/C 15 Output N/A N/C16 Output N/A N/C 16 Output N/A N/C17 Input 1 kOhm 5.5V 17 Input 1 kOhm GND18 Input 1 kOhm 5.5V 18 Input 1 kOhm GND19 Output N/A N/C 19 Output N/A N/C20 VCC Jumper 5.5V 20 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC273

Inputs High

TID Static Bias Conditions forPart Number 54HC273

Inputs Low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23676J (54HC273)

TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Q1-1Q8) VolVoh Voh1_Q1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Q1-2Q8) VolVoh Voh1_Q2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Q1-3Q8) VolVoh Voh1_Q3 1.9 Vol4, Voh4: Ioh=4.0 mA, Vcc=4.5 V (outputs 4Q1-4Q8) VolVoh Voh1_Q4 1.9 Vol5, Voh5: Ioh=5.2 mA, Vcc=6.0 V (outputs 5Q1-5Q8) VolVoh Voh1_Q5 1.9 VolVoh Voh1_Q6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1CLR\-1D8) VolVoh Voh1_Q7 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2CLR\-2D8) VolVoh Voh1_Q8 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3CLR\-3D8) VolVoh Voh2_Q1 4.4 VolVoh Voh2_Q2 4.4 VolVoh Voh2_Q3 4.4 VolVoh Voh2_Q4 4.4 CLR\ = Inverse CLR VolVoh Voh2_Q5 4.4 VolVoh Voh2_Q6 4.4 VolVoh Voh2_Q7 4.4 NOTES VolVoh Voh2_Q8 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Q1 5.9 function for VOH and VOL tests. VolVoh Voh3_Q2 5.9 VolVoh Voh3_Q3 5.9 VolVoh Voh3_Q4 5.9 VolVoh Voh3_Q5 5.9 VolVoh Voh3_Q6 5.9 VolVoh Voh3_Q7 5.9 VolVoh Voh3_Q8 5.9 VolVoh Voh4_Q1 3.98 VolVoh Voh4_Q2 3.98 VolVoh Voh4_Q3 3.98 VolVoh Voh4_Q4 3.98 VolVoh Voh4_Q5 3.98 VolVoh Voh4_Q6 3.98 VolVoh Voh4_Q7 3.98 VolVoh Voh4_Q8 3.98 VolVoh Voh5_Q1 5.48 VolVoh Voh5_Q2 5.48 VolVoh Voh5_Q3 5.48 VolVoh Voh5_Q4 5.48 VolVoh Voh5_Q5 5.48 VolVoh Voh5_Q6 5.48 VolVoh Voh5_Q7 5.48 VolVoh Voh5_Q8 5.48 VolVoh Vol1_Q1 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_Q2 0.1 VolVoh Vol1_Q3 0.1 VolVoh Vol1_Q4 0.1 VolVoh Vol1_Q5 0.1 VolVoh Vol1_Q6 0.1 VolVoh Vol1_Q7 0.1 VolVoh Vol1_Q8 0.1 VolVoh Vol2_Q1 0.1 VolVoh Vol2_Q2 0.1 VolVoh Vol2_Q3 0.1 VolVoh Vol2_Q4 0.1 VolVoh Vol2_Q5 0.1 VolVoh Vol2_Q6 0.1 VolVoh Vol2_Q7 0.1 VolVoh Vol2_Q8 0.1 VolVoh Vol3_Q1 0.1 VolVoh Vol3_Q2 0.1 VolVoh Vol3_Q3 0.1 VolVoh Vol3_Q4 0.1 VolVoh Vol3_Q5 0.1 VolVoh Vol3_Q6 0.1 VolVoh Vol3_Q7 0.1 VolVoh Vol3_Q8 0.1 VolVoh Vol4_Q1 0.26 VolVoh Vol4_Q2 0.26 VolVoh Vol4_Q3 0.26 VolVoh Vol4_Q4 0.26 VolVoh Vol4_Q5 0.26 VolVoh Vol4_Q6 0.26 VolVoh Vol4_Q7 0.26 VolVoh Vol4_Q8 0.26 VolVoh Vol5_Q1 0.26 VolVoh Vol5_Q2 0.26 VolVoh Vol5_Q3 0.26 VolVoh Vol5_Q4 0.26 VolVoh Vol5_Q5 0.26 VolVoh Vol5_Q6 0.26 VolVoh Vol5_Q7 0.26 VolVoh Vol5_Q8 0.26 VilVih * Vih1_CLR\ 1.5 VilVih * Vih1_CLK 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih1_D3 1.5 VilVih * Vih1_D4 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_D5 1.5 VilVih * Vih1_D6 1.5 VilVih * Vih1_D7 1.5 VilVih * Vih1_D8 1.5 VilVih * Vih2_CLR\ 3.15 VilVih * Vih2_CLK 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih2_D3 3.15 VilVih * Vih2_D4 3.15 VilVih * Vih2_D5 3.15 VilVih * Vih2_D6 3.15 VilVih * Vih2_D7 3.15 VilVih * Vih2_D8 3.15 VilVih * Vih3_CLR\ 4.2 VilVih * Vih3_CLK 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vih3_D3 4.2 VilVih * Vih3_D4 4.2 VilVih * Vih3_D5 4.2 VilVih * Vih3_D6 4.2 VilVih * Vih3_D7 4.2 VilVih * Vih3_D8 4.2 VilVih * Vil1_CLR\ 0.3 VilVih * Vil1_CLK 0.3 VilVih * Vil1_D1 0.3 VilVih * Vil1_D2 0.3 VilVih * Vil1_D3 0.3 VilVih * Vil1_D4 0.3 VilVih * Vil1_D5 0.3 VilVih * Vil1_D6 0.3 VilVih * Vil1_D7 0.3 VilVih * Vil1_D8 0.3 VilVih * Vil2_CLR\ 0.9 VilVih * Vil2_CLK 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil2_D3 0.9 VilVih * Vil2_D4 0.9 VilVih * Vil2_D5 0.9 VilVih * Vil2_D6 0.9 VilVih * Vil2_D7 0.9 VilVih * Vil2_D8 0.9 VilVih * Vil3_CLR\ 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_CLK 1.2 VilVih * Vil3_D1 1.2 VilVih * Vil3_D2 1.2 VilVih * Vil3_D3 1.2 VilVih * Vil3_D4 1.2 VilVih * Vil3_D5 1.2 VilVih * Vil3_D6 1.2 VilVih * Vil3_D7 1.2 VilVih * Vil3_D8 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_CLR\ -1.00E-07 Iin Iil_CLK -1.00E-07 Iin Iil_D1 -1.00E-07 Iin Iil_D2 -1.00E-07 Iin Iil_D3 -1.00E-07 Iin Iil_D4 -1.00E-07 Iin Iil_D5 -1.00E-07 Iin Iil_D6 -1.00E-07 Iin Iil_D7 -1.00E-07 Iin Iil_D8 -1.00E-07 Iin Iih_CLR\ 1.00E-07 Iin Iih_CLK 1.00E-07 Iin Iih_D1 1.00E-07 Iin Iih_D2 1.00E-07 Iin Iih_D3 1.00E-07 Iin Iih_D4 1.00E-07 Iin Iih_D5 1.00E-07 Iin Iih_D6 1.00E-07 Iin Iih_D7 1.00E-07 Iin Iih_D8 1.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC273 to Show Part Markings

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Radiation Lot Acceptance Testing MPD23668J R1.0 070606

Customer: Texas Instruments Part Type Tested: Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs Commercial Part Number: 54HC374 SMD Part Number: 5962-8407101VRA Customer Part Number: 7150024-12 TI Part Number: MPD23668J Lot Number/Date Code: 0721A Wafer Lot Number: 7094003SHE Quantity of Parts Received: 12 devices, 5 parts to be irradiated with inputs high, 5 parts to be irradiated with inputs low and 2 control units. Dose Rate and Maximum Total Dose: 50rad(Si)/s to 10krad(Si) total ionizing dose Test Increments: · Pre-Irradiation and 10krad(Si), no intermediate test points Overtest and Post-Irradiation Anneal: None Disposition of Irradiated Samples: Return to Texas Instruments Test Standard: MIL-STD-883G, Method 1019.7, Condition A Facility: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO Radiation Source: Co60 Irradiation Temperature: Ambient, room temperature Electrical Test Conditions: Pre-irradiation, and within one hour following the radiation exposure. Electrical Test Temperature: Ambient, room temperature. Deliverables: Summarized Data (including P90/90 Ktl Statistics) and Final Report Customer TPOC: Don Noble Phone Number: (903) 868-6217

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Bias Diagram- MPD23668J (54HC374)

Pin Number Function Via Bias Condition Pin Number Function Via Bias Condition1 Output-Enable\ 1 kOhm 5.5V 1 Output-Enable\ 1 kOhm GND2 Output N/A N/C 2 Output N/A N/C3 Input 1 kOhm 5.5V 3 Input 1 kOhm GND4 Input 1 kOhm 5.5V 4 Input 1 kOhm GND5 Output N/A N/C 5 Output N/A N/C6 Output N/A N/C 6 Output N/A N/C7 Input 1 kOhm 5.5V 7 Input 1 kOhm GND8 Input 1 kOhm 5.5V 8 Input 1 kOhm GND9 Output N/A N/C 9 Output N/A N/C10 GND Jumper GND 10 GND Jumper GND11 Clock 1 kOhm 5.5V 11 Clock 1 kOhm GND12 Output N/A N/C 12 Output N/A N/C13 Input 1 kOhm 5.5V 13 Input 1 kOhm GND14 Input 1 kOhm 5.5V 14 Input 1 kOhm GND15 Output N/A N/C 15 Output N/A N/C16 Output N/A N/C 16 Output N/A N/C17 Input 1 kOhm 5.5V 17 Input 1 kOhm GND18 Input 1 kOhm 5.5V 18 Input 1 kOhm GND19 Output N/A N/C 19 Output N/A N/C20 VCC Jumper 5.5V 20 VCC Jumper 5.5V

TID Static Bias Conditions forPart Number 54HC374

Inputs High

TID Static Bias Conditions forPart Number 54HC374

Inputs Low

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Tested Parameters and Limits- MPD23668J (54HC374) TestGroup Parameter LSL USL Vol1, Voh1: Ioh=20 µA, Vcc=2.0 V (outputs 1Q1-1Q8)

VolVoh Voh1_Q1 1.9 Vol2, Voh2: Ioh=20 µA, Vcc=4.5 V (outputs 2Q1-2Q8) VolVoh Voh1_Q2 1.9 Vol3, Voh3: Ioh=20 µA, Vcc=6.0 V (outputs 3Q1-3Q8) VolVoh Voh1_Q3 1.9 Vol4, Voh4: Ioh=6.0 mA, Vcc=4.5 V (outputs 4Q1-4Q8)VolVoh Voh1_Q4 1.9 Vol5, Voh5: Ioh=7.8 mA, Vcc=6.0 V (outputs 5Q1-5Q8)VolVoh Voh1_Q5 1.9 VolVoh Voh1_Q6 1.9 Vil1, Vih1: Vcc=2.0 V (inputs 1OE\-1D8) VolVoh Voh1_Q7 1.9 Vil2, Vih2: Vcc=4.5 V (inputs 2OE\-2D8) VolVoh Voh1_Q8 1.9 Vil3, Vih3: Vcc=6.0 V (inputs 3OE\-3D8) VolVoh Voh2_Q1 4.4 VolVoh Voh2_Q2 4.4 VolVoh Voh2_Q3 4.4 VolVoh Voh2_Q4 4.4 OE\ = Inverse OE VolVoh Voh2_Q5 4.4 VolVoh Voh2_Q6 4.4 VolVoh Voh2_Q7 4.4 NOTES VolVoh Voh2_Q8 4.4 * Tests shall be guaranteed if applied as a forcing VolVoh Voh3_Q1 5.9 function for VOH and VOL tests. VolVoh Voh3_Q2 5.9 VolVoh Voh3_Q3 5.9 VolVoh Voh3_Q4 5.9 VolVoh Voh3_Q5 5.9 VolVoh Voh3_Q6 5.9 VolVoh Voh3_Q7 5.9 VolVoh Voh3_Q8 5.9 VolVoh Voh4_Q1 3.98 VolVoh Voh4_Q2 3.98 VolVoh Voh4_Q3 3.98 VolVoh Voh4_Q4 3.98 VolVoh Voh4_Q5 3.98 VolVoh Voh4_Q6 3.98 VolVoh Voh4_Q7 3.98 VolVoh Voh4_Q8 3.98 VolVoh Voh5_Q1 5.48 VolVoh Voh5_Q2 5.48 VolVoh Voh5_Q3 5.48 VolVoh Voh5_Q4 5.48 VolVoh Voh5_Q5 5.48 VolVoh Voh5_Q6 5.48 VolVoh Voh5_Q7 5.48 VolVoh Voh5_Q8 5.48 VolVoh Vol1_Q1 0.1 VolVoh Vol1_Q2 0.1

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VolVoh Vol1_Q3 0.1 VolVoh Vol1_Q4 0.1 VolVoh Vol1_Q5 0.1 VolVoh Vol1_Q6 0.1 VolVoh Vol1_Q7 0.1 VolVoh Vol1_Q8 0.1 VolVoh Vol2_Q1 0.1 VolVoh Vol2_Q2 0.1 VolVoh Vol2_Q3 0.1 VolVoh Vol2_Q4 0.1 VolVoh Vol2_Q5 0.1 VolVoh Vol2_Q6 0.1 VolVoh Vol2_Q7 0.1 VolVoh Vol2_Q8 0.1 VolVoh Vol3_Q1 0.1 VolVoh Vol3_Q2 0.1 VolVoh Vol3_Q3 0.1 VolVoh Vol3_Q4 0.1 VolVoh Vol3_Q5 0.1 VolVoh Vol3_Q6 0.1 VolVoh Vol3_Q7 0.1 VolVoh Vol3_Q8 0.1 VolVoh Vol4_Q1 0.26 VolVoh Vol4_Q2 0.26 VolVoh Vol4_Q3 0.26 VolVoh Vol4_Q4 0.26 VolVoh Vol4_Q5 0.26 VolVoh Vol4_Q6 0.26 VolVoh Vol4_Q7 0.26 VolVoh Vol4_Q8 0.26 VolVoh Vol5_Q1 0.26 VolVoh Vol5_Q2 0.26 VolVoh Vol5_Q3 0.26 VolVoh Vol5_Q4 0.26 VolVoh Vol5_Q5 0.26 VolVoh Vol5_Q6 0.26 VolVoh Vol5_Q7 0.26 VolVoh Vol5_Q8 0.26 VilVih * Vih1_OE\ 1.5 VilVih * Vih1_CLK 1.5 VilVih * Vih1_D1 1.5 VilVih * Vih1_D2 1.5 VilVih * Vih1_D3 1.5 VilVih * Vih1_D4 1.5 VilVih * Vih1_D5 1.5

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vih1_D6 1.5 VilVih * Vih1_D7 1.5 VilVih * Vih1_D8 1.5 VilVih * Vih2_OE\ 3.15 VilVih * Vih2_CLK 3.15 VilVih * Vih2_D1 3.15 VilVih * Vih2_D2 3.15 VilVih * Vih2_D3 3.15 VilVih * Vih2_D4 3.15 VilVih * Vih2_D5 3.15 VilVih * Vih2_D6 3.15 VilVih * Vih2_D7 3.15 VilVih * Vih2_D8 3.15 VilVih * Vih3_OE\ 4.2 VilVih * Vih3_CLK 4.2 VilVih * Vih3_D1 4.2 VilVih * Vih3_D2 4.2 VilVih * Vih3_D3 4.2 VilVih * Vih3_D4 4.2 VilVih * Vih3_D5 4.2 VilVih * Vih3_D6 4.2 VilVih * Vih3_D7 4.2 VilVih * Vih3_D8 4.2 VilVih * Vil1_OE\ 0.3 VilVih * Vil1_CLK 0.3 VilVih * Vil1_D1 0.3 VilVih * Vil1_D2 0.3 VilVih * Vil1_D3 0.3 VilVih * Vil1_D4 0.3 VilVih * Vil1_D5 0.3 VilVih * Vil1_D6 0.3 VilVih * Vil1_D7 0.3 VilVih * Vil1_D8 0.3 VilVih * Vil2_OE\ 0.9 VilVih * Vil2_CLK 0.9 VilVih * Vil2_D1 0.9 VilVih * Vil2_D2 0.9 VilVih * Vil2_D3 0.9 VilVih * Vil2_D4 0.9 VilVih * Vil2_D5 0.9 VilVih * Vil2_D6 0.9 VilVih * Vil2_D7 0.9 VilVih * Vil2_D8 0.9 VilVih * Vil3_OE\ 1.2 VilVih * Vil3_CLK 1.2

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

VilVih * Vil3_D1 1.2 VilVih * Vil3_D2 1.2 VilVih * Vil3_D3 1.2 VilVih * Vil3_D4 1.2 VilVih * Vil3_D5 1.2 VilVih * Vil3_D6 1.2 VilVih * Vil3_D7 1.2 VilVih * Vil3_D8 1.2

Icc Icc_Vdd 8.00E-06 Icc Icc_Vss 8.00E-06 Iin Iil_OE\ -1.00E-07 Iin Iil_CLK -1.00E-07 Iin Iil_D1 -1.00E-07 Iin Iil_D2 -1.00E-07 Iin Iil_D3 -1.00E-07 Iin Iil_D4 -1.00E-07 Iin Iil_D5 -1.00E-07 Iin Iil_D6 -1.00E-07 Iin Iil_D7 -1.00E-07 Iin Iil_D8 -1.00E-07 Iin Iilh_OE\ 1.00E-07 Iin Iih_CLK 1.00E-07 Iin Iih_D1 1.00E-07 Iin Iih_D2 1.00E-07 Iin Iih_D3 1.00E-07 Iin Iih_D4 1.00E-07 Iin Iih_D5 1.00E-07 Iin Iih_D6 1.00E-07 Iin Iih_D7 1.00E-07 Iin Iih_D8 1.00E-07 Ioz Iozl_Q1 -5.00E-07 Ioz Iozl_Q2 -5.00E-07 Ioz Iozl_Q3 -5.00E-07 Ioz Iozl_Q4 -5.00E-07 Ioz Iozl_Q5 -5.00E-07 Ioz Iozl_Q6 -5.00E-07 Ioz Iozl_Q7 -5.00E-07 Ioz Iozl_Q8 -5.00E-07 Ioz Iozh_Q1 5.00E-07 Ioz Iozh_Q2 5.00E-07 Ioz Iozh_Q3 5.00E-07 Ioz Iozh_Q4 5.00E-07 Ioz Iozh_Q5 5.00E-07 Ioz Iozh_Q6 5.00E-07 Ioz Iozh_Q7 5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Ioz Iozh_Q8 5.00E-07

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Final Report

An ISO 9001:2000 Certified Company

Radiation Assured Devices4775 Centennial Blvd. Suite 130 Colorado Springs, CO 80919 (719) 531-0800

Photograph of HC374 to Show Part Markings

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Parameter vol20ua6v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 1.000E-03 1.000E-03 Inputs high408 0.000E+00 1.000E-03 1.000E-03 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 1.000E-03 1.000E-03 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 4.000E-04Std Dev 0.000E+00 5.477E-04Ps90%/90% (+KTL) 0.000E+00 1.902E-03Ps90%/90% (-KTL) 0.000E+00 -1.102E-03Un-Biased StatisticsAverage 0.000E+00 2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.426E-03Ps90%/90% (-KTL) 0.000E+00 -1.026E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua6v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 1.000E-03 1.000E-03 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.426E-03Ps90%/90% (-KTL) 0.000E+00 -1.026E-03Un-Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua6v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Un-Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua6v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Un-Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua6v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Un-Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua6v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 1.000E-03 1.000E-03 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 1.000E-03 1.000E-03 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.426E-03Ps90%/90% (-KTL) 0.000E+00 -1.026E-03Un-Biased StatisticsAverage 0.000E+00 2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.426E-03Ps90%/90% (-KTL) 0.000E+00 -1.026E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 -1.000E-03 0.000E+00 1.000E-03 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 -1.000E-03 -1.000E-03 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -2.000E-04 0.000E+00Std Dev 4.472E-04 0.000E+00Ps90%/90% (+KTL) 1.026E-03 0.000E+00Ps90%/90% (-KTL) -1.426E-03 0.000E+00Un-Biased StatisticsAverage 0.000E+00 -2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.026E-03Ps90%/90% (-KTL) 0.000E+00 -1.426E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 0.000E+00 0.000E+00 0.000E+00 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 -1.000E-03 -1.000E-03 Inputs low414 0.000E+00 -1.000E-03 -1.000E-03 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 -1.000E-03 0.000E+00 1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 -2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.026E-03Ps90%/90% (-KTL) 0.000E+00 -1.426E-03Un-Biased StatisticsAverage 0.000E+00 -4.000E-04Std Dev 0.000E+00 5.477E-04Ps90%/90% (+KTL) 0.000E+00 1.102E-03Ps90%/90% (-KTL) 0.000E+00 -1.902E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 -1.000E-03 -1.000E-03 Inputs high407 -1.000E-03 -1.000E-03 0.000E+00 Inputs high408 -1.000E-03 -1.000E-03 0.000E+00 Inputs high409 -1.000E-03 0.000E+00 1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 -1.000E-03 -1.000E-03 0.000E+00 Inputs low412 -1.000E-03 -1.000E-03 0.000E+00 Inputs low413 -1.000E-03 0.000E+00 1.000E-03 Inputs low414 0.000E+00 -1.000E-03 -1.000E-03 Inputs low415 -1.000E-03 0.000E+00 1.000E-03 Inputs low416 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure417 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -6.000E-04 -6.000E-04Std Dev 5.477E-04 5.477E-04Ps90%/90% (+KTL) 9.019E-04 9.019E-04Ps90%/90% (-KTL) -2.102E-03 -2.102E-03Un-Biased StatisticsAverage -8.000E-04 -6.000E-04Std Dev 4.472E-04 5.477E-04Ps90%/90% (+KTL) 4.263E-04 9.019E-04Ps90%/90% (-KTL) -2.026E-03 -2.102E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 -1.000E-03 -1.000E-03 Inputs high407 -1.000E-03 -1.000E-03 0.000E+00 Inputs high408 0.000E+00 -1.000E-03 -1.000E-03 Inputs high409 -1.000E-03 0.000E+00 1.000E-03 Inputs high410 -1.000E-03 0.000E+00 1.000E-03 Inputs high411 -1.000E-03 0.000E+00 1.000E-03 Inputs low412 -1.000E-03 -1.000E-03 0.000E+00 Inputs low413 -1.000E-03 -1.000E-03 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 -1.000E-03 -1.000E-03 0.000E+00 Inputs low416 0.000E+00 -1.000E-03 -1.000E-03 Control unit - no radiation exposure417 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -6.000E-04 -6.000E-04Std Dev 5.477E-04 5.477E-04Ps90%/90% (+KTL) 9.019E-04 9.019E-04Ps90%/90% (-KTL) -2.102E-03 -2.102E-03Un-Biased StatisticsAverage -8.000E-04 -6.000E-04Std Dev 4.472E-04 5.477E-04Ps90%/90% (+KTL) 4.263E-04 9.019E-04Ps90%/90% (-KTL) -2.026E-03 -2.102E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 -1.000E-03 0.000E+00 1.000E-03 Inputs high407 -1.000E-03 0.000E+00 1.000E-03 Inputs high408 -1.000E-03 0.000E+00 1.000E-03 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 -1.000E-03 0.000E+00 1.000E-03 Inputs low412 -1.000E-03 0.000E+00 1.000E-03 Inputs low413 -1.000E-03 0.000E+00 1.000E-03 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 -1.000E-03 -1.000E-03 0.000E+00 Inputs low416 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure417 0.000E+00 -1.000E-03 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage -6.000E-04 -2.000E-04Std Dev 5.477E-04 4.472E-04Ps90%/90% (+KTL) 9.019E-04 1.026E-03Ps90%/90% (-KTL) -2.102E-03 -1.426E-03Un-Biased StatisticsAverage -8.000E-04 -2.000E-04Std Dev 4.472E-04 4.472E-04Ps90%/90% (+KTL) 4.263E-04 1.026E-03Ps90%/90% (-KTL) -2.026E-03 -1.426E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua4p5v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 -1.000E-03 0.000E+00 1.000E-03 Inputs high409 -1.000E-03 0.000E+00 1.000E-03 Inputs high410 -1.000E-03 0.000E+00 1.000E-03 Inputs high411 -1.000E-03 -1.000E-03 0.000E+00 Inputs low412 -1.000E-03 0.000E+00 1.000E-03 Inputs low413 -1.000E-03 0.000E+00 1.000E-03 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 -1.000E-03 -1.000E-03 0.000E+00 Inputs low416 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure417 -1.000E-03 -1.000E-03 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -6.000E-04 0.000E+00Std Dev 5.477E-04 0.000E+00Ps90%/90% (+KTL) 9.019E-04 0.000E+00Ps90%/90% (-KTL) -2.102E-03 0.000E+00Un-Biased StatisticsAverage -8.000E-04 -4.000E-04Std Dev 4.472E-04 5.477E-04Ps90%/90% (+KTL) 4.263E-04 1.102E-03Ps90%/90% (-KTL) -2.026E-03 -1.902E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 -1.000E-03 -1.000E-03 Inputs high408 0.000E+00 -1.000E-03 -1.000E-03 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 -6.000E-04Std Dev 0.000E+00 5.477E-04Ps90%/90% (+KTL) 0.000E+00 9.019E-04Ps90%/90% (-KTL) 0.000E+00 -2.102E-03Un-Biased StatisticsAverage 0.000E+00 0.000E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 0.000E+00 0.000E+00Ps90%/90% (-KTL) 0.000E+00 0.000E+00Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 -1.000E-03 0.000E+00 1.000E-03 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 -1.000E-03 0.000E+00 1.000E-03 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 -1.000E-03 -1.000E-03 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -4.000E-04 0.000E+00Std Dev 5.477E-04 0.000E+00Ps90%/90% (+KTL) 1.102E-03 0.000E+00Ps90%/90% (-KTL) -1.902E-03 0.000E+00Un-Biased StatisticsAverage 0.000E+00 -2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.026E-03Ps90%/90% (-KTL) 0.000E+00 -1.426E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 0.000E+00 0.000E+00 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 -1.000E-03 0.000E+00 1.000E-03 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 -1.000E-03 -1.000E-03 Inputs low413 -1.000E-03 -1.000E-03 0.000E+00 Inputs low414 0.000E+00 -1.000E-03 -1.000E-03 Inputs low415 0.000E+00 -1.000E-03 -1.000E-03 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -2.000E-04 -2.000E-04Std Dev 4.472E-04 4.472E-04Ps90%/90% (+KTL) 1.026E-03 1.026E-03Ps90%/90% (-KTL) -1.426E-03 -1.426E-03Un-Biased StatisticsAverage -2.000E-04 -8.000E-04Std Dev 4.472E-04 4.472E-04Ps90%/90% (+KTL) 1.026E-03 4.263E-04Ps90%/90% (-KTL) -1.426E-03 -2.026E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 -1.000E-03 -1.000E-03 Inputs high407 -1.000E-03 -1.000E-03 0.000E+00 Inputs high408 0.000E+00 -1.000E-03 -1.000E-03 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 -1.000E-03 -1.000E-03 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 -1.000E-03 -1.000E-03 Inputs low413 0.000E+00 0.000E+00 0.000E+00 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 0.000E+00 0.000E+00 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 -1.000E-03 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage -2.000E-04 -1.000E-03Std Dev 4.472E-04 0.000E+00Ps90%/90% (+KTL) 1.026E-03 -1.000E-03Ps90%/90% (-KTL) -1.426E-03 -1.000E-03Un-Biased StatisticsAverage 0.000E+00 -2.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 1.026E-03Ps90%/90% (-KTL) 0.000E+00 -1.426E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 -1.000E-03 0.000E+00 1.000E-03 Inputs high407 0.000E+00 0.000E+00 0.000E+00 Inputs high408 0.000E+00 -1.000E-03 -1.000E-03 Inputs high409 0.000E+00 -1.000E-03 -1.000E-03 Inputs high410 0.000E+00 0.000E+00 0.000E+00 Inputs high411 0.000E+00 0.000E+00 0.000E+00 Inputs low412 0.000E+00 0.000E+00 0.000E+00 Inputs low413 0.000E+00 -1.000E-03 -1.000E-03 Inputs low414 0.000E+00 0.000E+00 0.000E+00 Inputs low415 -1.000E-03 -1.000E-03 0.000E+00 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage -2.000E-04 -4.000E-04Std Dev 4.472E-04 5.477E-04Ps90%/90% (+KTL) 1.026E-03 1.102E-03Ps90%/90% (-KTL) -1.426E-03 -1.902E-03Un-Biased StatisticsAverage -2.000E-04 -4.000E-04Std Dev 4.472E-04 5.477E-04Ps90%/90% (+KTL) 1.026E-03 1.102E-03Ps90%/90% (-KTL) -1.426E-03 -1.902E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol20ua2v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 0.000E+00 -1.000E-03 -1.000E-03 Inputs high407 0.000E+00 -1.000E-03 -1.000E-03 Inputs high408 0.000E+00 -1.000E-03 -1.000E-03 Inputs high409 0.000E+00 0.000E+00 0.000E+00 Inputs high410 0.000E+00 -1.000E-03 -1.000E-03 Inputs high411 -1.000E-03 0.000E+00 1.000E-03 Inputs low412 0.000E+00 -1.000E-03 -1.000E-03 Inputs low413 -1.000E-03 -1.000E-03 0.000E+00 Inputs low414 0.000E+00 -1.000E-03 -1.000E-03 Inputs low415 0.000E+00 -1.000E-03 -1.000E-03 Inputs low416 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure417 0.000E+00 0.000E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 0.000E+00 -8.000E-04Std Dev 0.000E+00 4.472E-04Ps90%/90% (+KTL) 0.000E+00 4.263E-04Ps90%/90% (-KTL) 0.000E+00 -2.026E-03Un-Biased StatisticsAverage -4.000E-04 -8.000E-04Std Dev 5.477E-04 4.472E-04Ps90%/90% (+KTL) 1.102E-03 4.263E-04Ps90%/90% (-KTL) -1.902E-03 -2.026E-03Specification 1.000E-01 1.000E-01Status PASS PASS

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Parameter vol5p2ma6v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.200E-01 1.170E-01 -3.000E-03 Inputs high407 1.180E-01 1.160E-01 -2.000E-03 Inputs high408 1.200E-01 1.180E-01 -2.000E-03 Inputs high409 1.190E-01 1.180E-01 -1.000E-03 Inputs high410 1.200E-01 1.190E-01 -1.000E-03 Inputs high411 1.190E-01 1.180E-01 -1.000E-03 Inputs low412 1.180E-01 1.170E-01 -1.000E-03 Inputs low413 1.170E-01 1.170E-01 0.000E+00 Inputs low414 1.180E-01 1.190E-01 1.000E-03 Inputs low415 1.170E-01 1.170E-01 0.000E+00 Inputs low416 1.180E-01 1.180E-01 0.000E+00 Control unit - no radiation exposure417 1.200E-01 1.200E-01 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 1.194E-01 1.176E-01Std Dev 8.944E-04 1.140E-03Ps90%/90% (+KTL) 1.219E-01 1.207E-01Ps90%/90% (-KTL) 1.169E-01 1.145E-01Un-Biased StatisticsAverage 1.178E-01 1.176E-01Std Dev 8.367E-04 8.944E-04Ps90%/90% (+KTL) 1.201E-01 1.201E-01Ps90%/90% (-KTL) 1.155E-01 1.151E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol5p2ma6v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.120E-01 1.090E-01 -3.000E-03 Inputs high407 1.120E-01 1.080E-01 -4.000E-03 Inputs high408 1.120E-01 1.090E-01 -3.000E-03 Inputs high409 1.130E-01 1.100E-01 -3.000E-03 Inputs high410 1.140E-01 1.100E-01 -4.000E-03 Inputs high411 1.130E-01 1.100E-01 -3.000E-03 Inputs low412 1.120E-01 1.090E-01 -3.000E-03 Inputs low413 1.110E-01 1.090E-01 -2.000E-03 Inputs low414 1.130E-01 1.100E-01 -3.000E-03 Inputs low415 1.120E-01 1.090E-01 -3.000E-03 Inputs low416 1.130E-01 1.110E-01 -2.000E-03 Control unit - no radiation exposure417 1.140E-01 1.120E-01 -2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.126E-01 1.092E-01Std Dev 8.944E-04 8.367E-04Ps90%/90% (+KTL) 1.151E-01 1.115E-01Ps90%/90% (-KTL) 1.101E-01 1.069E-01Un-Biased StatisticsAverage 1.122E-01 1.094E-01Std Dev 8.367E-04 5.477E-04Ps90%/90% (+KTL) 1.145E-01 1.109E-01Ps90%/90% (-KTL) 1.099E-01 1.079E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol5p2ma6v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.070E-01 1.040E-01 -3.000E-03 Inputs high407 1.060E-01 1.030E-01 -3.000E-03 Inputs high408 1.070E-01 1.040E-01 -3.000E-03 Inputs high409 1.080E-01 1.050E-01 -3.000E-03 Inputs high410 1.090E-01 1.060E-01 -3.000E-03 Inputs high411 1.080E-01 1.050E-01 -3.000E-03 Inputs low412 1.060E-01 1.040E-01 -2.000E-03 Inputs low413 1.060E-01 1.040E-01 -2.000E-03 Inputs low414 1.080E-01 1.050E-01 -3.000E-03 Inputs low415 1.070E-01 1.050E-01 -2.000E-03 Inputs low416 1.080E-01 1.070E-01 -1.000E-03 Control unit - no radiation exposure417 1.090E-01 1.070E-01 -2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.074E-01 1.044E-01Std Dev 1.140E-03 1.140E-03Ps90%/90% (+KTL) 1.105E-01 1.075E-01Ps90%/90% (-KTL) 1.043E-01 1.013E-01Un-Biased StatisticsAverage 1.070E-01 1.046E-01Std Dev 1.000E-03 5.477E-04Ps90%/90% (+KTL) 1.097E-01 1.061E-01Ps90%/90% (-KTL) 1.043E-01 1.031E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol5p2ma6v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.190E-01 1.140E-01 -5.000E-03 Inputs high407 1.180E-01 1.130E-01 -5.000E-03 Inputs high408 1.190E-01 1.140E-01 -5.000E-03 Inputs high409 1.190E-01 1.160E-01 -3.000E-03 Inputs high410 1.200E-01 1.160E-01 -4.000E-03 Inputs high411 1.200E-01 1.160E-01 -4.000E-03 Inputs low412 1.180E-01 1.150E-01 -3.000E-03 Inputs low413 1.170E-01 1.140E-01 -3.000E-03 Inputs low414 1.190E-01 1.160E-01 -3.000E-03 Inputs low415 1.170E-01 1.150E-01 -2.000E-03 Inputs low416 1.200E-01 1.180E-01 -2.000E-03 Control unit - no radiation exposure417 1.200E-01 1.180E-01 -2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.190E-01 1.146E-01Std Dev 7.071E-04 1.342E-03Ps90%/90% (+KTL) 1.209E-01 1.183E-01Ps90%/90% (-KTL) 1.171E-01 1.109E-01Un-Biased StatisticsAverage 1.182E-01 1.152E-01Std Dev 1.304E-03 8.367E-04Ps90%/90% (+KTL) 1.218E-01 1.175E-01Ps90%/90% (-KTL) 1.146E-01 1.129E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol5p2ma6v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.100E-01 1.070E-01 -3.000E-03 Inputs high407 1.100E-01 1.060E-01 -4.000E-03 Inputs high408 1.110E-01 1.070E-01 -4.000E-03 Inputs high409 1.110E-01 1.080E-01 -3.000E-03 Inputs high410 1.120E-01 1.080E-01 -4.000E-03 Inputs high411 1.110E-01 1.090E-01 -2.000E-03 Inputs low412 1.100E-01 1.070E-01 -3.000E-03 Inputs low413 1.090E-01 1.070E-01 -2.000E-03 Inputs low414 1.110E-01 1.090E-01 -2.000E-03 Inputs low415 1.100E-01 1.080E-01 -2.000E-03 Inputs low416 1.110E-01 1.100E-01 -1.000E-03 Control unit - no radiation exposure417 1.120E-01 1.100E-01 -2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.108E-01 1.072E-01Std Dev 8.367E-04 8.367E-04Ps90%/90% (+KTL) 1.131E-01 1.095E-01Ps90%/90% (-KTL) 1.085E-01 1.049E-01Un-Biased StatisticsAverage 1.102E-01 1.080E-01Std Dev 8.367E-04 1.000E-03Ps90%/90% (+KTL) 1.125E-01 1.107E-01Ps90%/90% (-KTL) 1.079E-01 1.053E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol5p2ma6v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.120E-01 1.090E-01 -3.000E-03 Inputs high407 1.120E-01 1.090E-01 -3.000E-03 Inputs high408 1.120E-01 1.090E-01 -3.000E-03 Inputs high409 1.130E-01 1.100E-01 -3.000E-03 Inputs high410 1.140E-01 1.110E-01 -3.000E-03 Inputs high411 1.130E-01 1.110E-01 -2.000E-03 Inputs low412 1.120E-01 1.090E-01 -3.000E-03 Inputs low413 1.120E-01 1.100E-01 -2.000E-03 Inputs low414 1.130E-01 1.110E-01 -2.000E-03 Inputs low415 1.120E-01 1.090E-01 -3.000E-03 Inputs low416 1.130E-01 1.120E-01 -1.000E-03 Control unit - no radiation exposure417 1.130E-01 1.120E-01 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.126E-01 1.096E-01Std Dev 8.944E-04 8.944E-04Ps90%/90% (+KTL) 1.151E-01 1.121E-01Ps90%/90% (-KTL) 1.101E-01 1.071E-01Un-Biased StatisticsAverage 1.124E-01 1.100E-01Std Dev 5.477E-04 1.000E-03Ps90%/90% (+KTL) 1.139E-01 1.127E-01Ps90%/90% (-KTL) 1.109E-01 1.073E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.120E-01 1.080E-01 -4.000E-03 Inputs high407 1.100E-01 1.050E-01 -5.000E-03 Inputs high408 1.110E-01 1.080E-01 -3.000E-03 Inputs high409 1.110E-01 1.080E-01 -3.000E-03 Inputs high410 1.120E-01 1.100E-01 -2.000E-03 Inputs high411 1.110E-01 1.080E-01 -3.000E-03 Inputs low412 1.100E-01 1.070E-01 -3.000E-03 Inputs low413 1.090E-01 1.080E-01 -1.000E-03 Inputs low414 1.110E-01 1.090E-01 -2.000E-03 Inputs low415 1.090E-01 1.080E-01 -1.000E-03 Inputs low416 1.110E-01 1.100E-01 -1.000E-03 Control unit - no radiation exposure417 1.120E-01 1.120E-01 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 1.112E-01 1.078E-01Std Dev 8.367E-04 1.789E-03Ps90%/90% (+KTL) 1.135E-01 1.127E-01Ps90%/90% (-KTL) 1.089E-01 1.029E-01Un-Biased StatisticsAverage 1.100E-01 1.080E-01Std Dev 1.000E-03 7.071E-04Ps90%/90% (+KTL) 1.127E-01 1.099E-01Ps90%/90% (-KTL) 1.073E-01 1.061E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.050E-01 1.010E-01 -4.000E-03 Inputs high407 1.050E-01 1.000E-01 -5.000E-03 Inputs high408 1.050E-01 1.010E-01 -4.000E-03 Inputs high409 1.060E-01 1.020E-01 -4.000E-03 Inputs high410 1.070E-01 1.030E-01 -4.000E-03 Inputs high411 1.060E-01 1.020E-01 -4.000E-03 Inputs low412 1.050E-01 1.010E-01 -4.000E-03 Inputs low413 1.040E-01 1.010E-01 -3.000E-03 Inputs low414 1.060E-01 1.030E-01 -3.000E-03 Inputs low415 1.050E-01 1.010E-01 -4.000E-03 Inputs low416 1.060E-01 1.040E-01 -2.000E-03 Control unit - no radiation exposure417 1.070E-01 1.060E-01 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.056E-01 1.014E-01Std Dev 8.944E-04 1.140E-03Ps90%/90% (+KTL) 1.081E-01 1.045E-01Ps90%/90% (-KTL) 1.031E-01 9.827E-02Un-Biased StatisticsAverage 1.052E-01 1.016E-01Std Dev 8.367E-04 8.944E-04Ps90%/90% (+KTL) 1.075E-01 1.041E-01Ps90%/90% (-KTL) 1.029E-01 9.915E-02Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.020E-01 9.700E-02 -5.000E-03 Inputs high407 1.010E-01 9.600E-02 -5.000E-03 Inputs high408 1.020E-01 9.700E-02 -5.000E-03 Inputs high409 1.030E-01 9.800E-02 -5.000E-03 Inputs high410 1.040E-01 9.900E-02 -5.000E-03 Inputs high411 1.030E-01 9.900E-02 -4.000E-03 Inputs low412 1.010E-01 9.800E-02 -3.000E-03 Inputs low413 1.000E-01 9.800E-02 -2.000E-03 Inputs low414 1.030E-01 9.900E-02 -4.000E-03 Inputs low415 1.020E-01 9.800E-02 -4.000E-03 Inputs low416 1.030E-01 1.010E-01 -2.000E-03 Control unit - no radiation exposure417 1.040E-01 1.030E-01 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.024E-01 9.740E-02Std Dev 1.140E-03 1.140E-03Ps90%/90% (+KTL) 1.055E-01 1.005E-01Ps90%/90% (-KTL) 9.927E-02 9.427E-02Un-Biased StatisticsAverage 1.018E-01 9.840E-02Std Dev 1.304E-03 5.477E-04Ps90%/90% (+KTL) 1.054E-01 9.990E-02Ps90%/90% (-KTL) 9.822E-02 9.690E-02Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.110E-01 1.050E-01 -6.000E-03 Inputs high407 1.100E-01 1.040E-01 -6.000E-03 Inputs high408 1.110E-01 1.050E-01 -6.000E-03 Inputs high409 1.100E-01 1.060E-01 -4.000E-03 Inputs high410 1.120E-01 1.070E-01 -5.000E-03 Inputs high411 1.120E-01 1.070E-01 -5.000E-03 Inputs low412 1.100E-01 1.060E-01 -4.000E-03 Inputs low413 1.090E-01 1.060E-01 -3.000E-03 Inputs low414 1.110E-01 1.070E-01 -4.000E-03 Inputs low415 1.100E-01 1.060E-01 -4.000E-03 Inputs low416 1.120E-01 1.100E-01 -2.000E-03 Control unit - no radiation exposure417 1.110E-01 1.100E-01 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.108E-01 1.054E-01Std Dev 8.367E-04 1.140E-03Ps90%/90% (+KTL) 1.131E-01 1.085E-01Ps90%/90% (-KTL) 1.085E-01 1.023E-01Un-Biased StatisticsAverage 1.104E-01 1.064E-01Std Dev 1.140E-03 5.477E-04Ps90%/90% (+KTL) 1.135E-01 1.079E-01Ps90%/90% (-KTL) 1.073E-01 1.049E-01Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.040E-01 9.900E-02 -5.000E-03 Inputs high407 1.030E-01 9.900E-02 -4.000E-03 Inputs high408 1.040E-01 9.900E-02 -5.000E-03 Inputs high409 1.050E-01 1.010E-01 -4.000E-03 Inputs high410 1.060E-01 1.010E-01 -5.000E-03 Inputs high411 1.050E-01 1.010E-01 -4.000E-03 Inputs low412 1.040E-01 1.000E-01 -4.000E-03 Inputs low413 1.030E-01 1.000E-01 -3.000E-03 Inputs low414 1.050E-01 1.020E-01 -3.000E-03 Inputs low415 1.040E-01 1.000E-01 -4.000E-03 Inputs low416 1.050E-01 1.040E-01 -1.000E-03 Control unit - no radiation exposure417 1.060E-01 1.040E-01 -2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.044E-01 9.980E-02Std Dev 1.140E-03 1.095E-03Ps90%/90% (+KTL) 1.075E-01 1.028E-01Ps90%/90% (-KTL) 1.013E-01 9.680E-02Un-Biased StatisticsAverage 1.042E-01 1.006E-01Std Dev 8.367E-04 8.944E-04Ps90%/90% (+KTL) 1.065E-01 1.031E-01Ps90%/90% (-KTL) 1.019E-01 9.815E-02Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vol4ma4p5v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.050E-01 1.010E-01 -4.000E-03 Inputs high407 1.050E-01 1.000E-01 -5.000E-03 Inputs high408 1.050E-01 1.010E-01 -4.000E-03 Inputs high409 1.060E-01 1.020E-01 -4.000E-03 Inputs high410 1.070E-01 1.020E-01 -5.000E-03 Inputs high411 1.060E-01 1.030E-01 -3.000E-03 Inputs low412 1.050E-01 1.010E-01 -4.000E-03 Inputs low413 1.050E-01 1.020E-01 -3.000E-03 Inputs low414 1.060E-01 1.030E-01 -3.000E-03 Inputs low415 1.050E-01 1.010E-01 -4.000E-03 Inputs low416 1.060E-01 1.050E-01 -1.000E-03 Control unit - no radiation exposure417 1.060E-01 1.050E-01 -1.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.056E-01 1.012E-01Std Dev 8.944E-04 8.367E-04Ps90%/90% (+KTL) 1.081E-01 1.035E-01Ps90%/90% (-KTL) 1.031E-01 9.891E-02Un-Biased StatisticsAverage 1.054E-01 1.020E-01Std Dev 5.477E-04 1.000E-03Ps90%/90% (+KTL) 1.069E-01 1.047E-01Ps90%/90% (-KTL) 1.039E-01 9.926E-02Specification 2.600E-01 2.600E-01Status PASS PASS

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Parameter vohm20ua6v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.992E+00 5.992E+00 0.000E+00 Inputs high407 5.992E+00 5.992E+00 0.000E+00 Inputs high408 5.992E+00 5.992E+00 0.000E+00 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.992E+00 5.992E+00 0.000E+00 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.992E+00 5.988E+00 -4.000E-03 Inputs low414 5.992E+00 5.992E+00 0.000E+00 Inputs low415 5.992E+00 5.992E+00 0.000E+00 Inputs low416 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure417 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.992E+00 5.992E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 5.992E+00 5.992E+00Ps90%/90% (-KTL) 5.992E+00 5.992E+00Un-Biased StatisticsAverage 5.992E+00 5.991E+00Std Dev 0.000E+00 1.789E-03Ps90%/90% (+KTL) 5.992E+00 5.996E+00Ps90%/90% (-KTL) 5.992E+00 5.986E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua6v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.996E+00 5.992E+00 -4.000E-03 Inputs high407 5.992E+00 5.992E+00 0.000E+00 Inputs high408 5.992E+00 5.992E+00 0.000E+00 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.992E+00 5.992E+00 0.000E+00 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.992E+00 5.992E+00 0.000E+00 Inputs low414 5.992E+00 5.992E+00 0.000E+00 Inputs low415 5.992E+00 5.992E+00 0.000E+00 Inputs low416 5.996E+00 5.996E+00 0.000E+00 Control unit - no radiation exposure417 5.996E+00 5.992E+00 -4.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 5.993E+00 5.992E+00Std Dev 1.789E-03 0.000E+00Ps90%/90% (+KTL) 5.998E+00 5.992E+00Ps90%/90% (-KTL) 5.988E+00 5.992E+00Un-Biased StatisticsAverage 5.992E+00 5.992E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 5.992E+00 5.992E+00Ps90%/90% (-KTL) 5.992E+00 5.992E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua6v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.992E+00 5.992E+00 0.000E+00 Inputs high407 5.996E+00 5.992E+00 -4.000E-03 Inputs high408 5.996E+00 5.992E+00 -4.000E-03 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.992E+00 5.992E+00 0.000E+00 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.992E+00 5.992E+00 0.000E+00 Inputs low414 5.992E+00 5.992E+00 0.000E+00 Inputs low415 5.996E+00 5.992E+00 -4.000E-03 Inputs low416 5.996E+00 5.992E+00 -4.000E-03 Control unit - no radiation exposure417 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.994E+00 5.992E+00Std Dev 2.191E-03 0.000E+00Ps90%/90% (+KTL) 6.000E+00 5.992E+00Ps90%/90% (-KTL) 5.988E+00 5.992E+00Un-Biased StatisticsAverage 5.993E+00 5.992E+00Std Dev 1.789E-03 0.000E+00Ps90%/90% (+KTL) 5.998E+00 5.992E+00Ps90%/90% (-KTL) 5.988E+00 5.992E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua6v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.992E+00 5.992E+00 0.000E+00 Inputs high407 5.992E+00 5.992E+00 0.000E+00 Inputs high408 5.992E+00 5.992E+00 0.000E+00 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.992E+00 5.992E+00 0.000E+00 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.996E+00 5.992E+00 -4.000E-03 Inputs low414 5.996E+00 5.992E+00 -4.000E-03 Inputs low415 5.992E+00 5.992E+00 0.000E+00 Inputs low416 5.992E+00 5.996E+00 4.000E-03 Control unit - no radiation exposure417 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.992E+00 5.992E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 5.992E+00 5.992E+00Ps90%/90% (-KTL) 5.992E+00 5.992E+00Un-Biased StatisticsAverage 5.994E+00 5.992E+00Std Dev 2.191E-03 0.000E+00Ps90%/90% (+KTL) 6.000E+00 5.992E+00Ps90%/90% (-KTL) 5.988E+00 5.992E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua6v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.992E+00 5.992E+00 0.000E+00 Inputs high407 5.992E+00 5.992E+00 0.000E+00 Inputs high408 5.996E+00 5.992E+00 -4.000E-03 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.992E+00 5.996E+00 4.000E-03 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.992E+00 5.992E+00 0.000E+00 Inputs low414 5.992E+00 5.992E+00 0.000E+00 Inputs low415 5.992E+00 5.992E+00 0.000E+00 Inputs low416 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure417 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.993E+00 5.992E+00Std Dev 1.789E-03 0.000E+00Ps90%/90% (+KTL) 5.998E+00 5.992E+00Ps90%/90% (-KTL) 5.988E+00 5.992E+00Un-Biased StatisticsAverage 5.992E+00 5.993E+00Std Dev 0.000E+00 1.789E-03Ps90%/90% (+KTL) 5.992E+00 5.998E+00Ps90%/90% (-KTL) 5.992E+00 5.988E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua6v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.992E+00 5.992E+00 0.000E+00 Inputs high407 5.992E+00 5.992E+00 0.000E+00 Inputs high408 5.992E+00 5.992E+00 0.000E+00 Inputs high409 5.992E+00 5.992E+00 0.000E+00 Inputs high410 5.992E+00 5.992E+00 0.000E+00 Inputs high411 5.996E+00 5.996E+00 0.000E+00 Inputs low412 5.992E+00 5.992E+00 0.000E+00 Inputs low413 5.992E+00 5.992E+00 0.000E+00 Inputs low414 5.992E+00 5.992E+00 0.000E+00 Inputs low415 5.992E+00 5.992E+00 0.000E+00 Inputs low416 5.996E+00 5.996E+00 0.000E+00 Control unit - no radiation exposure417 5.992E+00 5.992E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.992E+00 5.992E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 5.992E+00 5.992E+00Ps90%/90% (-KTL) 5.992E+00 5.992E+00Un-Biased StatisticsAverage 5.993E+00 5.993E+00Std Dev 1.789E-03 1.789E-03Ps90%/90% (+KTL) 5.998E+00 5.998E+00Ps90%/90% (-KTL) 5.988E+00 5.988E+00Specification 5.900E+00 5.900E+00Status PASS PASS

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Parameter vohm20ua4p5v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.488E+00 4.492E+00 4.000E-03 Inputs high407 4.488E+00 4.488E+00 0.000E+00 Inputs high408 4.492E+00 4.492E+00 0.000E+00 Inputs high409 4.492E+00 4.488E+00 -4.000E-03 Inputs high410 4.488E+00 4.488E+00 0.000E+00 Inputs high411 4.488E+00 4.492E+00 4.000E-03 Inputs low412 4.488E+00 4.492E+00 4.000E-03 Inputs low413 4.488E+00 4.492E+00 4.000E-03 Inputs low414 4.492E+00 4.488E+00 -4.000E-03 Inputs low415 4.488E+00 4.488E+00 0.000E+00 Inputs low416 4.488E+00 4.488E+00 0.000E+00 Control unit - no radiation exposure417 4.492E+00 4.492E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.490E+00 4.490E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 4.496E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Un-Biased StatisticsAverage 4.489E+00 4.490E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.494E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua4p5v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.488E+00 4.492E+00 4.000E-03 Inputs high407 4.492E+00 4.488E+00 -4.000E-03 Inputs high408 4.488E+00 4.492E+00 4.000E-03 Inputs high409 4.492E+00 4.492E+00 0.000E+00 Inputs high410 4.492E+00 4.492E+00 0.000E+00 Inputs high411 4.492E+00 4.488E+00 -4.000E-03 Inputs low412 4.492E+00 4.492E+00 0.000E+00 Inputs low413 4.488E+00 4.488E+00 0.000E+00 Inputs low414 4.492E+00 4.488E+00 -4.000E-03 Inputs low415 4.492E+00 4.492E+00 0.000E+00 Inputs low416 4.492E+00 4.492E+00 0.000E+00 Control unit - no radiation exposure417 4.492E+00 4.488E+00 -4.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 4.490E+00 4.491E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 4.496E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.486E+00Un-Biased StatisticsAverage 4.491E+00 4.490E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.496E+00 4.496E+00Ps90%/90% (-KTL) 4.486E+00 4.484E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua4p5v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.492E+00 4.492E+00 0.000E+00 Inputs high407 4.488E+00 4.492E+00 4.000E-03 Inputs high408 4.492E+00 4.488E+00 -4.000E-03 Inputs high409 4.492E+00 4.492E+00 0.000E+00 Inputs high410 4.492E+00 4.488E+00 -4.000E-03 Inputs high411 4.488E+00 4.492E+00 4.000E-03 Inputs low412 4.492E+00 4.492E+00 0.000E+00 Inputs low413 4.488E+00 4.492E+00 4.000E-03 Inputs low414 4.488E+00 4.488E+00 0.000E+00 Inputs low415 4.488E+00 4.488E+00 0.000E+00 Inputs low416 4.488E+00 4.492E+00 4.000E-03 Control unit - no radiation exposure417 4.488E+00 4.488E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.491E+00 4.490E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.496E+00 4.496E+00Ps90%/90% (-KTL) 4.486E+00 4.484E+00Un-Biased StatisticsAverage 4.489E+00 4.490E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.494E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua4p5v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.488E+00 4.488E+00 0.000E+00 Inputs high407 4.492E+00 4.488E+00 -4.000E-03 Inputs high408 4.492E+00 4.492E+00 0.000E+00 Inputs high409 4.492E+00 4.488E+00 -4.000E-03 Inputs high410 4.492E+00 4.488E+00 -4.000E-03 Inputs high411 4.488E+00 4.492E+00 4.000E-03 Inputs low412 4.492E+00 4.488E+00 -4.000E-03 Inputs low413 4.488E+00 4.488E+00 0.000E+00 Inputs low414 4.492E+00 4.488E+00 -4.000E-03 Inputs low415 4.492E+00 4.488E+00 -4.000E-03 Inputs low416 4.488E+00 4.492E+00 4.000E-03 Control unit - no radiation exposure417 4.492E+00 4.488E+00 -4.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 4.491E+00 4.489E+00Std Dev 1.789E-03 1.789E-03Ps90%/90% (+KTL) 4.496E+00 4.494E+00Ps90%/90% (-KTL) 4.486E+00 4.484E+00Un-Biased StatisticsAverage 4.490E+00 4.489E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 4.496E+00 4.494E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua4p5v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.492E+00 4.488E+00 -4.000E-03 Inputs high407 4.488E+00 4.488E+00 0.000E+00 Inputs high408 4.488E+00 4.492E+00 4.000E-03 Inputs high409 4.488E+00 4.488E+00 0.000E+00 Inputs high410 4.488E+00 4.492E+00 4.000E-03 Inputs high411 4.488E+00 4.488E+00 0.000E+00 Inputs low412 4.492E+00 4.488E+00 -4.000E-03 Inputs low413 4.492E+00 4.488E+00 -4.000E-03 Inputs low414 4.492E+00 4.488E+00 -4.000E-03 Inputs low415 4.488E+00 4.488E+00 0.000E+00 Inputs low416 4.488E+00 4.492E+00 4.000E-03 Control unit - no radiation exposure417 4.488E+00 4.488E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.489E+00 4.490E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.494E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Un-Biased StatisticsAverage 4.490E+00 4.488E+00Std Dev 2.191E-03 0.000E+00Ps90%/90% (+KTL) 4.496E+00 4.488E+00Ps90%/90% (-KTL) 4.484E+00 4.488E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua4p5v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.488E+00 4.492E+00 4.000E-03 Inputs high407 4.492E+00 4.492E+00 0.000E+00 Inputs high408 4.492E+00 4.488E+00 -4.000E-03 Inputs high409 4.492E+00 4.488E+00 -4.000E-03 Inputs high410 4.488E+00 4.488E+00 0.000E+00 Inputs high411 4.492E+00 4.488E+00 -4.000E-03 Inputs low412 4.492E+00 4.488E+00 -4.000E-03 Inputs low413 4.492E+00 4.492E+00 0.000E+00 Inputs low414 4.488E+00 4.488E+00 0.000E+00 Inputs low415 4.488E+00 4.488E+00 0.000E+00 Inputs low416 4.492E+00 4.488E+00 -4.000E-03 Control unit - no radiation exposure417 4.492E+00 4.492E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.490E+00 4.490E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 4.496E+00 4.496E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Un-Biased StatisticsAverage 4.490E+00 4.489E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 4.496E+00 4.494E+00Ps90%/90% (-KTL) 4.484E+00 4.484E+00Specification 4.400E+00 4.400E+00Status PASS PASS

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Parameter vohm20ua2v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.996E+00 1.998E+00 2.000E-03 Inputs high407 1.996E+00 1.996E+00 0.000E+00 Inputs high408 1.996E+00 1.998E+00 2.000E-03 Inputs high409 1.996E+00 1.996E+00 0.000E+00 Inputs high410 1.996E+00 1.996E+00 0.000E+00 Inputs high411 1.998E+00 1.996E+00 -2.000E-03 Inputs low412 1.998E+00 1.996E+00 -2.000E-03 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.996E+00 1.996E+00 0.000E+00 Inputs low415 1.998E+00 1.996E+00 -2.000E-03 Inputs low416 1.996E+00 1.996E+00 0.000E+00 Control unit - no radiation exposure417 1.996E+00 1.996E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 1.996E+00 1.997E+00Std Dev 0.000E+00 1.095E-03Ps90%/90% (+KTL) 1.996E+00 2.000E+00Ps90%/90% (-KTL) 1.996E+00 1.994E+00Un-Biased StatisticsAverage 1.998E+00 1.996E+00Std Dev 8.944E-04 8.944E-04Ps90%/90% (+KTL) 2.000E+00 1.999E+00Ps90%/90% (-KTL) 1.995E+00 1.994E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm20ua2v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.998E+00 1.998E+00 0.000E+00 Inputs high407 1.996E+00 1.998E+00 2.000E-03 Inputs high408 1.998E+00 1.998E+00 0.000E+00 Inputs high409 1.996E+00 1.998E+00 2.000E-03 Inputs high410 1.998E+00 1.998E+00 0.000E+00 Inputs high411 1.998E+00 1.998E+00 0.000E+00 Inputs low412 1.998E+00 1.998E+00 0.000E+00 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.998E+00 1.998E+00 0.000E+00 Inputs low415 1.998E+00 1.998E+00 0.000E+00 Inputs low416 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure417 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 1.997E+00 1.998E+00Std Dev 1.095E-03 0.000E+00Ps90%/90% (+KTL) 2.000E+00 1.998E+00Ps90%/90% (-KTL) 1.994E+00 1.998E+00Un-Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 1.998E+00 1.998E+00Ps90%/90% (-KTL) 1.998E+00 1.998E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm20ua2v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.996E+00 1.996E+00 0.000E+00 Inputs high407 1.998E+00 1.998E+00 0.000E+00 Inputs high408 1.998E+00 1.998E+00 0.000E+00 Inputs high409 1.998E+00 1.998E+00 0.000E+00 Inputs high410 1.998E+00 1.998E+00 0.000E+00 Inputs high411 1.998E+00 1.998E+00 0.000E+00 Inputs low412 1.998E+00 1.998E+00 0.000E+00 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.998E+00 1.998E+00 0.000E+00 Inputs low415 1.998E+00 1.998E+00 0.000E+00 Inputs low416 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure417 1.996E+00 1.998E+00 2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 8.944E-04 8.944E-04Ps90%/90% (+KTL) 2.000E+00 2.000E+00Ps90%/90% (-KTL) 1.995E+00 1.995E+00Un-Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 1.998E+00 1.998E+00Ps90%/90% (-KTL) 1.998E+00 1.998E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm20ua2v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.998E+00 1.998E+00 0.000E+00 Inputs high407 1.998E+00 1.998E+00 0.000E+00 Inputs high408 1.998E+00 1.996E+00 -2.000E-03 Inputs high409 1.996E+00 1.998E+00 2.000E-03 Inputs high410 1.998E+00 1.998E+00 0.000E+00 Inputs high411 1.998E+00 1.998E+00 0.000E+00 Inputs low412 1.998E+00 1.998E+00 0.000E+00 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.998E+00 1.998E+00 0.000E+00 Inputs low415 1.998E+00 1.998E+00 0.000E+00 Inputs low416 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure417 1.996E+00 1.998E+00 2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 8.944E-04 8.944E-04Ps90%/90% (+KTL) 2.000E+00 2.000E+00Ps90%/90% (-KTL) 1.995E+00 1.995E+00Un-Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 0.000E+00 0.000E+00Ps90%/90% (+KTL) 1.998E+00 1.998E+00Ps90%/90% (-KTL) 1.998E+00 1.998E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm20ua2v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.998E+00 1.998E+00 0.000E+00 Inputs high407 1.998E+00 1.998E+00 0.000E+00 Inputs high408 1.996E+00 1.996E+00 0.000E+00 Inputs high409 1.998E+00 1.998E+00 0.000E+00 Inputs high410 1.998E+00 1.998E+00 0.000E+00 Inputs high411 1.998E+00 1.996E+00 -2.000E-03 Inputs low412 1.998E+00 1.998E+00 0.000E+00 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.998E+00 1.998E+00 0.000E+00 Inputs low415 1.998E+00 1.998E+00 0.000E+00 Inputs low416 1.998E+00 1.996E+00 -2.000E-03 Control unit - no radiation exposure417 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 8.944E-04 8.944E-04Ps90%/90% (+KTL) 2.000E+00 2.000E+00Ps90%/90% (-KTL) 1.995E+00 1.995E+00Un-Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 0.000E+00 8.944E-04Ps90%/90% (+KTL) 1.998E+00 2.000E+00Ps90%/90% (-KTL) 1.998E+00 1.995E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm20ua2v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 1.998E+00 1.998E+00 0.000E+00 Inputs high407 1.998E+00 1.998E+00 0.000E+00 Inputs high408 1.998E+00 1.996E+00 -2.000E-03 Inputs high409 1.998E+00 1.998E+00 0.000E+00 Inputs high410 1.998E+00 1.998E+00 0.000E+00 Inputs high411 1.996E+00 1.998E+00 2.000E-03 Inputs low412 1.998E+00 1.998E+00 0.000E+00 Inputs low413 1.998E+00 1.998E+00 0.000E+00 Inputs low414 1.998E+00 1.998E+00 0.000E+00 Inputs low415 1.996E+00 1.996E+00 0.000E+00 Inputs low416 1.998E+00 1.998E+00 0.000E+00 Control unit - no radiation exposure417 1.996E+00 1.998E+00 2.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 1.998E+00 1.998E+00Std Dev 0.000E+00 8.944E-04Ps90%/90% (+KTL) 1.998E+00 2.000E+00Ps90%/90% (-KTL) 1.998E+00 1.995E+00Un-Biased StatisticsAverage 1.997E+00 1.998E+00Std Dev 1.095E-03 8.944E-04Ps90%/90% (+KTL) 2.000E+00 2.000E+00Ps90%/90% (-KTL) 1.994E+00 1.995E+00Specification 1.900E+00 1.900E+00Status PASS PASS

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Parameter vohm5p2ma6v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.820E+00 5.820E+00 0.000E+00 Inputs high407 5.820E+00 5.820E+00 0.000E+00 Inputs high408 5.820E+00 5.820E+00 0.000E+00 Inputs high409 5.820E+00 5.816E+00 -4.000E-03 Inputs high410 5.820E+00 5.816E+00 -4.000E-03 Inputs high411 5.820E+00 5.820E+00 0.000E+00 Inputs low412 5.820E+00 5.824E+00 4.000E-03 Inputs low413 5.824E+00 5.824E+00 0.000E+00 Inputs low414 5.820E+00 5.820E+00 0.000E+00 Inputs low415 5.820E+00 5.820E+00 0.000E+00 Inputs low416 5.820E+00 5.820E+00 0.000E+00 Control unit - no radiation exposure417 5.820E+00 5.816E+00 -4.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 5.820E+00 5.818E+00Std Dev 0.000E+00 2.191E-03Ps90%/90% (+KTL) 5.820E+00 5.824E+00Ps90%/90% (-KTL) 5.820E+00 5.812E+00Un-Biased StatisticsAverage 5.821E+00 5.822E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 5.826E+00 5.828E+00Ps90%/90% (-KTL) 5.816E+00 5.816E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm5p2ma6v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.836E+00 5.832E+00 -4.000E-03 Inputs high407 5.836E+00 5.832E+00 -4.000E-03 Inputs high408 5.832E+00 5.832E+00 0.000E+00 Inputs high409 5.832E+00 5.828E+00 -4.000E-03 Inputs high410 5.832E+00 5.828E+00 -4.000E-03 Inputs high411 5.832E+00 5.832E+00 0.000E+00 Inputs low412 5.836E+00 5.832E+00 -4.000E-03 Inputs low413 5.836E+00 5.836E+00 0.000E+00 Inputs low414 5.832E+00 5.832E+00 0.000E+00 Inputs low415 5.832E+00 5.836E+00 4.000E-03 Inputs low416 5.832E+00 5.836E+00 4.000E-03 Control unit - no radiation exposure417 5.832E+00 5.832E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.834E+00 5.830E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 5.840E+00 5.836E+00Ps90%/90% (-KTL) 5.828E+00 5.824E+00Un-Biased StatisticsAverage 5.834E+00 5.834E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 5.840E+00 5.840E+00Ps90%/90% (-KTL) 5.828E+00 5.828E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm5p2ma6v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.828E+00 5.824E+00 -4.000E-03 Inputs high407 5.828E+00 5.828E+00 0.000E+00 Inputs high408 5.828E+00 5.820E+00 -8.000E-03 Inputs high409 5.828E+00 5.820E+00 -8.000E-03 Inputs high410 5.828E+00 5.824E+00 -4.000E-03 Inputs high411 5.828E+00 5.828E+00 0.000E+00 Inputs low412 5.828E+00 5.824E+00 -4.000E-03 Inputs low413 5.832E+00 5.828E+00 -4.000E-03 Inputs low414 5.828E+00 5.824E+00 -4.000E-03 Inputs low415 5.828E+00 5.828E+00 0.000E+00 Inputs low416 5.828E+00 5.824E+00 -4.000E-03 Control unit - no radiation exposure417 5.828E+00 5.828E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.828E+00 5.823E+00Std Dev 0.000E+00 3.347E-03Ps90%/90% (+KTL) 5.828E+00 5.832E+00Ps90%/90% (-KTL) 5.828E+00 5.814E+00Un-Biased StatisticsAverage 5.829E+00 5.826E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 5.834E+00 5.832E+00Ps90%/90% (-KTL) 5.824E+00 5.820E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm5p2ma6v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.836E+00 5.832E+00 -4.000E-03 Inputs high407 5.832E+00 5.832E+00 0.000E+00 Inputs high408 5.836E+00 5.832E+00 -4.000E-03 Inputs high409 5.832E+00 5.828E+00 -4.000E-03 Inputs high410 5.832E+00 5.832E+00 0.000E+00 Inputs high411 5.832E+00 5.832E+00 0.000E+00 Inputs low412 5.836E+00 5.836E+00 0.000E+00 Inputs low413 5.840E+00 5.836E+00 -4.000E-03 Inputs low414 5.832E+00 5.832E+00 0.000E+00 Inputs low415 5.836E+00 5.832E+00 -4.000E-03 Inputs low416 5.832E+00 5.836E+00 4.000E-03 Control unit - no radiation exposure417 5.832E+00 5.832E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.834E+00 5.831E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 5.840E+00 5.836E+00Ps90%/90% (-KTL) 5.828E+00 5.826E+00Un-Biased StatisticsAverage 5.835E+00 5.834E+00Std Dev 3.347E-03 2.191E-03Ps90%/90% (+KTL) 5.844E+00 5.840E+00Ps90%/90% (-KTL) 5.826E+00 5.828E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm5p2ma6v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.832E+00 5.832E+00 0.000E+00 Inputs high407 5.836E+00 5.832E+00 -4.000E-03 Inputs high408 5.836E+00 5.832E+00 -4.000E-03 Inputs high409 5.832E+00 5.832E+00 0.000E+00 Inputs high410 5.832E+00 5.828E+00 -4.000E-03 Inputs high411 5.836E+00 5.836E+00 0.000E+00 Inputs low412 5.836E+00 5.832E+00 -4.000E-03 Inputs low413 5.832E+00 5.836E+00 4.000E-03 Inputs low414 5.832E+00 5.832E+00 0.000E+00 Inputs low415 5.836E+00 5.832E+00 -4.000E-03 Inputs low416 5.832E+00 5.832E+00 0.000E+00 Control unit - no radiation exposure417 5.832E+00 5.832E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.834E+00 5.831E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 5.840E+00 5.836E+00Ps90%/90% (-KTL) 5.828E+00 5.826E+00Un-Biased StatisticsAverage 5.834E+00 5.834E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 5.840E+00 5.840E+00Ps90%/90% (-KTL) 5.828E+00 5.828E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm5p2ma6v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 5.828E+00 5.832E+00 4.000E-03 Inputs high407 5.836E+00 5.832E+00 -4.000E-03 Inputs high408 5.832E+00 5.828E+00 -4.000E-03 Inputs high409 5.832E+00 5.824E+00 -8.000E-03 Inputs high410 5.828E+00 5.828E+00 0.000E+00 Inputs high411 5.828E+00 5.832E+00 4.000E-03 Inputs low412 5.832E+00 5.832E+00 0.000E+00 Inputs low413 5.832E+00 5.832E+00 0.000E+00 Inputs low414 5.828E+00 5.828E+00 0.000E+00 Inputs low415 5.832E+00 5.828E+00 -4.000E-03 Inputs low416 5.832E+00 5.828E+00 -4.000E-03 Control unit - no radiation exposure417 5.828E+00 5.828E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 5.831E+00 5.829E+00Std Dev 3.347E-03 3.347E-03Ps90%/90% (+KTL) 5.840E+00 5.838E+00Ps90%/90% (-KTL) 5.822E+00 5.820E+00Un-Biased StatisticsAverage 5.830E+00 5.830E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 5.836E+00 5.836E+00Ps90%/90% (-KTL) 5.824E+00 5.824E+00Specification 5.480E+00 5.480E+00Status PASS PASS

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Parameter vohm4ma4p5v_6_3YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.328E+00 4.324E+00 -4.000E-03 Inputs high407 4.328E+00 4.324E+00 -4.000E-03 Inputs high408 4.324E+00 4.320E+00 -4.000E-03 Inputs high409 4.328E+00 4.324E+00 -4.000E-03 Inputs high410 4.324E+00 4.320E+00 -4.000E-03 Inputs high411 4.328E+00 4.328E+00 0.000E+00 Inputs low412 4.328E+00 4.328E+00 0.000E+00 Inputs low413 4.328E+00 4.328E+00 0.000E+00 Inputs low414 4.324E+00 4.324E+00 0.000E+00 Inputs low415 4.328E+00 4.324E+00 -4.000E-03 Inputs low416 4.324E+00 4.324E+00 0.000E+00 Control unit - no radiation exposure417 4.320E+00 4.328E+00 8.000E-03 Control unit - no radiation exposure

Biased StatisticsAverage 4.326E+00 4.322E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 4.332E+00 4.328E+00Ps90%/90% (-KTL) 4.320E+00 4.316E+00Un-Biased StatisticsAverage 4.327E+00 4.326E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.332E+00 4.332E+00Ps90%/90% (-KTL) 4.322E+00 4.320E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter vohm4ma4p5v_4_2YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.336E+00 4.332E+00 -4.000E-03 Inputs high407 4.336E+00 4.332E+00 -4.000E-03 Inputs high408 4.336E+00 4.332E+00 -4.000E-03 Inputs high409 4.336E+00 4.332E+00 -4.000E-03 Inputs high410 4.332E+00 4.332E+00 0.000E+00 Inputs high411 4.336E+00 4.336E+00 0.000E+00 Inputs low412 4.340E+00 4.336E+00 -4.000E-03 Inputs low413 4.340E+00 4.340E+00 0.000E+00 Inputs low414 4.332E+00 4.332E+00 0.000E+00 Inputs low415 4.340E+00 4.336E+00 -4.000E-03 Inputs low416 4.332E+00 4.336E+00 4.000E-03 Control unit - no radiation exposure417 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.335E+00 4.332E+00Std Dev 1.789E-03 0.000E+00Ps90%/90% (+KTL) 4.340E+00 4.332E+00Ps90%/90% (-KTL) 4.330E+00 4.332E+00Un-Biased StatisticsAverage 4.338E+00 4.336E+00Std Dev 3.578E-03 2.828E-03Ps90%/90% (+KTL) 4.347E+00 4.344E+00Ps90%/90% (-KTL) 4.328E+00 4.328E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter vohm4ma4p5v_12_6YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.332E+00 4.328E+00 -4.000E-03 Inputs high407 4.332E+00 4.332E+00 0.000E+00 Inputs high408 4.332E+00 4.324E+00 -8.000E-03 Inputs high409 4.328E+00 4.324E+00 -4.000E-03 Inputs high410 4.332E+00 4.324E+00 -8.000E-03 Inputs high411 4.332E+00 4.328E+00 -4.000E-03 Inputs low412 4.332E+00 4.332E+00 0.000E+00 Inputs low413 4.336E+00 4.332E+00 -4.000E-03 Inputs low414 4.332E+00 4.328E+00 -4.000E-03 Inputs low415 4.336E+00 4.332E+00 -4.000E-03 Inputs low416 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure417 4.328E+00 4.328E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.331E+00 4.326E+00Std Dev 1.789E-03 3.578E-03Ps90%/90% (+KTL) 4.336E+00 4.336E+00Ps90%/90% (-KTL) 4.326E+00 4.317E+00Un-Biased StatisticsAverage 4.334E+00 4.330E+00Std Dev 2.191E-03 2.191E-03Ps90%/90% (+KTL) 4.340E+00 4.336E+00Ps90%/90% (-KTL) 4.328E+00 4.324E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter vohm4ma4p5v_10_5YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.336E+00 4.336E+00 0.000E+00 Inputs high407 4.340E+00 4.336E+00 -4.000E-03 Inputs high408 4.336E+00 4.332E+00 -4.000E-03 Inputs high409 4.336E+00 4.332E+00 -4.000E-03 Inputs high410 4.336E+00 4.332E+00 -4.000E-03 Inputs high411 4.332E+00 4.336E+00 4.000E-03 Inputs low412 4.336E+00 4.336E+00 0.000E+00 Inputs low413 4.340E+00 4.340E+00 0.000E+00 Inputs low414 4.332E+00 4.336E+00 4.000E-03 Inputs low415 4.336E+00 4.336E+00 0.000E+00 Inputs low416 4.332E+00 4.336E+00 4.000E-03 Control unit - no radiation exposure417 4.336E+00 4.336E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.337E+00 4.334E+00Std Dev 1.789E-03 2.191E-03Ps90%/90% (+KTL) 4.342E+00 4.340E+00Ps90%/90% (-KTL) 4.332E+00 4.328E+00Un-Biased StatisticsAverage 4.335E+00 4.337E+00Std Dev 3.347E-03 1.789E-03Ps90%/90% (+KTL) 4.344E+00 4.342E+00Ps90%/90% (-KTL) 4.326E+00 4.332E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter vohm4ma4p5v_2_1YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.336E+00 4.332E+00 -4.000E-03 Inputs high407 4.340E+00 4.336E+00 -4.000E-03 Inputs high408 4.336E+00 4.332E+00 -4.000E-03 Inputs high409 4.332E+00 4.332E+00 0.000E+00 Inputs high410 4.332E+00 4.332E+00 0.000E+00 Inputs high411 4.336E+00 4.332E+00 -4.000E-03 Inputs low412 4.336E+00 4.336E+00 0.000E+00 Inputs low413 4.336E+00 4.336E+00 0.000E+00 Inputs low414 4.336E+00 4.332E+00 -4.000E-03 Inputs low415 4.336E+00 4.336E+00 0.000E+00 Inputs low416 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure417 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.335E+00 4.333E+00Std Dev 3.347E-03 1.789E-03Ps90%/90% (+KTL) 4.344E+00 4.338E+00Ps90%/90% (-KTL) 4.326E+00 4.328E+00Un-Biased StatisticsAverage 4.336E+00 4.334E+00Std Dev 0.000E+00 2.191E-03Ps90%/90% (+KTL) 4.336E+00 4.340E+00Ps90%/90% (-KTL) 4.336E+00 4.328E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter vohm4ma4p5v_8_4YTotal Dose

Device 0 10 Delta Exposure Bias Conditions406 4.336E+00 4.332E+00 -4.000E-03 Inputs high407 4.336E+00 4.336E+00 0.000E+00 Inputs high408 4.336E+00 4.332E+00 -4.000E-03 Inputs high409 4.332E+00 4.328E+00 -4.000E-03 Inputs high410 4.332E+00 4.328E+00 -4.000E-03 Inputs high411 4.332E+00 4.332E+00 0.000E+00 Inputs low412 4.336E+00 4.336E+00 0.000E+00 Inputs low413 4.336E+00 4.332E+00 -4.000E-03 Inputs low414 4.332E+00 4.332E+00 0.000E+00 Inputs low415 4.336E+00 4.332E+00 -4.000E-03 Inputs low416 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure417 4.332E+00 4.332E+00 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 4.334E+00 4.331E+00Std Dev 2.191E-03 3.347E-03Ps90%/90% (+KTL) 4.340E+00 4.340E+00Ps90%/90% (-KTL) 4.328E+00 4.322E+00Un-Biased StatisticsAverage 4.334E+00 4.333E+00Std Dev 2.191E-03 1.789E-03Ps90%/90% (+KTL) 4.340E+00 4.338E+00Ps90%/90% (-KTL) 4.328E+00 4.328E+00Specification 3.980E+00 3.980E+00Status PASS PASS

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Parameter iinlo6v_1_1ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 3.250E-08 3.500E-08 2.500E-09 Inputs high407 3.250E-08 3.500E-08 2.500E-09 Inputs high408 3.250E-08 3.250E-08 0.000E+00 Inputs high409 3.250E-08 3.250E-08 0.000E+00 Inputs high410 3.000E-08 3.250E-08 2.500E-09 Inputs high411 3.250E-08 3.250E-08 0.000E+00 Inputs low412 3.250E-08 3.250E-08 0.000E+00 Inputs low413 3.000E-08 3.250E-08 2.500E-09 Inputs low414 3.000E-08 3.250E-08 2.500E-09 Inputs low415 3.250E-08 3.500E-08 2.500E-09 Inputs low416 3.250E-08 3.500E-08 2.500E-09 Control unit - no radiation exposure417 3.250E-08 3.250E-08 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 3.200E-08 3.350E-08Std Dev 1.118E-09 1.369E-09Ps90%/90% (+KTL) 3.507E-08 3.725E-08Ps90%/90% (-KTL) 2.893E-08 2.975E-08Un-Biased StatisticsAverage 3.150E-08 3.300E-08Std Dev 1.369E-09 1.118E-09Ps90%/90% (+KTL) 3.525E-08 3.607E-08Ps90%/90% (-KTL) 2.775E-08 2.993E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo6v_3_2ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.500E-08 0.000E+00 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.250E-08 2.750E-08 5.000E-09 Inputs high409 2.250E-08 2.500E-08 2.500E-09 Inputs high410 2.500E-08 2.750E-08 2.500E-09 Inputs high411 2.500E-08 2.750E-08 2.500E-09 Inputs low412 2.500E-08 2.500E-08 0.000E+00 Inputs low413 2.500E-08 2.500E-08 0.000E+00 Inputs low414 2.500E-08 2.250E-08 -2.500E-09 Inputs low415 2.250E-08 2.500E-08 2.500E-09 Inputs low416 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure417 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.400E-08 2.600E-08Std Dev 1.369E-09 1.369E-09Ps90%/90% (+KTL) 2.775E-08 2.975E-08Ps90%/90% (-KTL) 2.025E-08 2.225E-08Un-Biased StatisticsAverage 2.450E-08 2.500E-08Std Dev 1.118E-09 1.768E-09Ps90%/90% (+KTL) 2.757E-08 2.985E-08Ps90%/90% (-KTL) 2.143E-08 2.015E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo6v_5_3ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.750E-08 2.750E-08 0.000E+00 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.500E-08 2.500E-08 0.000E+00 Inputs high409 2.500E-08 2.500E-08 0.000E+00 Inputs high410 2.750E-08 2.500E-08 -2.500E-09 Inputs high411 2.500E-08 2.750E-08 2.500E-09 Inputs low412 2.500E-08 2.500E-08 0.000E+00 Inputs low413 2.500E-08 2.750E-08 2.500E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.750E-08 2.500E-09 Inputs low416 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure417 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 2.600E-08 2.550E-08Std Dev 1.369E-09 1.118E-09Ps90%/90% (+KTL) 2.975E-08 2.857E-08Ps90%/90% (-KTL) 2.225E-08 2.243E-08Un-Biased StatisticsAverage 2.500E-08 2.650E-08Std Dev 0.000E+00 1.369E-09Ps90%/90% (+KTL) 2.500E-08 3.025E-08Ps90%/90% (-KTL) 2.500E-08 2.275E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo6v_9_4ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.500E-08 0.000E+00 Inputs high407 2.750E-08 2.750E-08 0.000E+00 Inputs high408 2.500E-08 2.750E-08 2.500E-09 Inputs high409 2.500E-08 2.750E-08 2.500E-09 Inputs high410 2.500E-08 2.500E-08 0.000E+00 Inputs high411 2.500E-08 2.500E-08 0.000E+00 Inputs low412 2.750E-08 2.500E-08 -2.500E-09 Inputs low413 2.750E-08 2.750E-08 0.000E+00 Inputs low414 2.750E-08 2.750E-08 0.000E+00 Inputs low415 2.750E-08 2.750E-08 0.000E+00 Inputs low416 2.500E-08 2.750E-08 2.500E-09 Control unit - no radiation exposure417 2.750E-08 2.750E-08 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 2.550E-08 2.650E-08Std Dev 1.118E-09 1.369E-09Ps90%/90% (+KTL) 2.857E-08 3.025E-08Ps90%/90% (-KTL) 2.243E-08 2.275E-08Un-Biased StatisticsAverage 2.700E-08 2.650E-08Std Dev 1.118E-09 1.369E-09Ps90%/90% (+KTL) 3.007E-08 3.025E-08Ps90%/90% (-KTL) 2.393E-08 2.275E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo6v_11_5ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.500E-08 0.000E+00 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.500E-08 2.750E-08 2.500E-09 Inputs high409 2.500E-08 2.750E-08 2.500E-09 Inputs high410 2.500E-08 2.000E-08 -5.000E-09 Inputs high411 2.750E-08 2.000E-08 -7.500E-09 Inputs low412 2.500E-08 2.750E-08 2.500E-09 Inputs low413 2.500E-08 2.750E-08 2.500E-09 Inputs low414 2.500E-08 2.750E-08 2.500E-09 Inputs low415 2.750E-08 2.000E-08 -7.500E-09 Inputs low416 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure417 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 2.500E-08 2.500E-08Std Dev 0.000E+00 3.062E-09Ps90%/90% (+KTL) 2.500E-08 3.340E-08Ps90%/90% (-KTL) 2.500E-08 1.660E-08Un-Biased StatisticsAverage 2.600E-08 2.450E-08Std Dev 1.369E-09 4.108E-09Ps90%/90% (+KTL) 2.975E-08 3.576E-08Ps90%/90% (-KTL) 2.225E-08 1.324E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo6v_13_6ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.750E-08 2.750E-08 0.000E+00 Inputs high407 2.250E-08 2.750E-08 5.000E-09 Inputs high408 2.750E-08 2.500E-08 -2.500E-09 Inputs high409 2.500E-08 2.750E-08 2.500E-09 Inputs high410 2.500E-08 2.750E-08 2.500E-09 Inputs high411 2.750E-08 2.500E-08 -2.500E-09 Inputs low412 2.750E-08 2.500E-08 -2.500E-09 Inputs low413 2.500E-08 2.500E-08 0.000E+00 Inputs low414 2.500E-08 2.750E-08 2.500E-09 Inputs low415 2.750E-08 2.500E-08 -2.500E-09 Inputs low416 2.500E-08 2.750E-08 2.500E-09 Control unit - no radiation exposure417 2.500E-08 2.250E-08 -2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.550E-08 2.700E-08Std Dev 2.092E-09 1.118E-09Ps90%/90% (+KTL) 3.124E-08 3.007E-08Ps90%/90% (-KTL) 1.976E-08 2.393E-08Un-Biased StatisticsAverage 2.650E-08 2.550E-08Std Dev 1.369E-09 1.118E-09Ps90%/90% (+KTL) 3.025E-08 2.857E-08Ps90%/90% (-KTL) 2.275E-08 2.243E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_5_3ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.250E-08 2.250E-08 0.000E+00 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.500E-08 2.500E-08 0.000E+00 Inputs high409 2.500E-08 2.500E-08 0.000E+00 Inputs high410 2.250E-08 2.500E-08 2.500E-09 Inputs high411 2.500E-08 2.750E-08 2.500E-09 Inputs low412 2.500E-08 2.500E-08 0.000E+00 Inputs low413 2.500E-08 2.750E-08 2.500E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.750E-08 2.500E-09 Inputs low416 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure417 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.400E-08 2.450E-08Std Dev 1.369E-09 1.118E-09Ps90%/90% (+KTL) 2.775E-08 2.757E-08Ps90%/90% (-KTL) 2.025E-08 2.143E-08Un-Biased StatisticsAverage 2.500E-08 2.650E-08Std Dev 0.000E+00 1.369E-09Ps90%/90% (+KTL) 2.500E-08 3.025E-08Ps90%/90% (-KTL) 2.500E-08 2.275E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_3_2ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.250E-08 -2.500E-09 Inputs high407 2.250E-08 2.250E-08 0.000E+00 Inputs high408 2.500E-08 2.500E-08 0.000E+00 Inputs high409 2.250E-08 2.500E-08 2.500E-09 Inputs high410 2.250E-08 2.500E-08 2.500E-09 Inputs high411 2.500E-08 2.250E-08 -2.500E-09 Inputs low412 2.250E-08 2.250E-08 0.000E+00 Inputs low413 2.250E-08 2.250E-08 0.000E+00 Inputs low414 2.500E-08 2.250E-08 -2.500E-09 Inputs low415 2.250E-08 2.250E-08 0.000E+00 Inputs low416 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure417 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.350E-08 2.400E-08Std Dev 1.369E-09 1.369E-09Ps90%/90% (+KTL) 2.725E-08 2.775E-08Ps90%/90% (-KTL) 1.975E-08 2.025E-08Un-Biased StatisticsAverage 2.350E-08 2.250E-08Std Dev 1.369E-09 0.000E+00Ps90%/90% (+KTL) 2.725E-08 2.250E-08Ps90%/90% (-KTL) 1.975E-08 2.250E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_11_5ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.250E-08 2.000E-08 -2.500E-09 Inputs high407 2.250E-08 2.000E-08 -2.500E-09 Inputs high408 2.250E-08 2.500E-08 2.500E-09 Inputs high409 2.250E-08 2.250E-08 0.000E+00 Inputs high410 2.500E-08 2.500E-08 0.000E+00 Inputs high411 2.250E-08 2.500E-08 2.500E-09 Inputs low412 2.500E-08 2.250E-08 -2.500E-09 Inputs low413 2.000E-08 2.500E-08 5.000E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.250E-08 -2.500E-09 Inputs low416 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure417 2.000E-08 2.500E-08 5.000E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.300E-08 2.250E-08Std Dev 1.118E-09 2.500E-09Ps90%/90% (+KTL) 2.607E-08 2.936E-08Ps90%/90% (-KTL) 1.993E-08 1.565E-08Un-Biased StatisticsAverage 2.350E-08 2.400E-08Std Dev 2.236E-09 1.369E-09Ps90%/90% (+KTL) 2.963E-08 2.775E-08Ps90%/90% (-KTL) 1.737E-08 2.025E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_9_4ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.500E-08 0.000E+00 Inputs high407 2.750E-08 2.500E-08 -2.500E-09 Inputs high408 2.750E-08 2.500E-08 -2.500E-09 Inputs high409 2.500E-08 2.250E-08 -2.500E-09 Inputs high410 2.500E-08 2.750E-08 2.500E-09 Inputs high411 2.250E-08 2.500E-08 2.500E-09 Inputs low412 2.750E-08 2.500E-08 -2.500E-09 Inputs low413 2.500E-08 2.250E-08 -2.500E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.500E-08 0.000E+00 Inputs low416 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure417 2.750E-08 2.500E-08 -2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.600E-08 2.500E-08Std Dev 1.369E-09 1.768E-09Ps90%/90% (+KTL) 2.975E-08 2.985E-08Ps90%/90% (-KTL) 2.225E-08 2.015E-08Un-Biased StatisticsAverage 2.500E-08 2.450E-08Std Dev 1.768E-09 1.118E-09Ps90%/90% (+KTL) 2.985E-08 2.757E-08Ps90%/90% (-KTL) 2.015E-08 2.143E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_13_6ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.750E-08 2.500E-08 -2.500E-09 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.750E-08 2.500E-08 -2.500E-09 Inputs high409 2.500E-08 2.500E-08 0.000E+00 Inputs high410 2.750E-08 2.500E-08 -2.500E-09 Inputs high411 2.500E-08 2.500E-08 0.000E+00 Inputs low412 2.500E-08 2.500E-08 0.000E+00 Inputs low413 2.500E-08 2.250E-08 -2.500E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.750E-08 2.500E-09 Inputs low416 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure417 2.500E-08 2.500E-08 0.000E+00 Control unit - no radiation exposure

Biased StatisticsAverage 2.650E-08 2.500E-08Std Dev 1.369E-09 0.000E+00Ps90%/90% (+KTL) 3.025E-08 2.500E-08Ps90%/90% (-KTL) 2.275E-08 2.500E-08Un-Biased StatisticsAverage 2.500E-08 2.500E-08Std Dev 0.000E+00 1.768E-09Ps90%/90% (+KTL) 2.500E-08 2.985E-08Ps90%/90% (-KTL) 2.500E-08 2.015E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iinlo0v_1_1ATotal Dose

Device 0 10 Delta Exposure Bias Conditions406 2.500E-08 2.500E-08 0.000E+00 Inputs high407 2.500E-08 2.500E-08 0.000E+00 Inputs high408 2.750E-08 2.500E-08 -2.500E-09 Inputs high409 2.250E-08 2.500E-08 2.500E-09 Inputs high410 2.500E-08 2.750E-08 2.500E-09 Inputs high411 2.500E-08 2.500E-08 0.000E+00 Inputs low412 2.500E-08 2.500E-08 0.000E+00 Inputs low413 2.500E-08 2.250E-08 -2.500E-09 Inputs low414 2.500E-08 2.500E-08 0.000E+00 Inputs low415 2.500E-08 2.500E-08 0.000E+00 Inputs low416 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure417 2.250E-08 2.500E-08 2.500E-09 Control unit - no radiation exposure

Biased StatisticsAverage 2.500E-08 2.550E-08Std Dev 1.768E-09 1.118E-09Ps90%/90% (+KTL) 2.985E-08 2.857E-08Ps90%/90% (-KTL) 2.015E-08 2.243E-08Un-Biased StatisticsAverage 2.500E-08 2.450E-08Std Dev 0.000E+00 1.118E-09Ps90%/90% (+KTL) 2.500E-08 2.757E-08Ps90%/90% (-KTL) 2.500E-08 2.143E-08Specification 1.000E-07 1.000E-07Status PASS PASS

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Parameter iccllow6p0v_1Total Dose

Device 0 10 Delta Exposure Bias Conditions406 3.500E-07 4.500E-07 1.000E-07 Inputs high407 3.500E-07 9.000E-07 5.500E-07 Inputs high408 4.000E-07 2.500E-06 2.100E-06 Inputs high409 4.000E-07 7.500E-07 3.500E-07 Inputs high410 3.500E-07 3.500E-07 0.000E+00 Inputs high411 3.500E-07 3.500E-07 0.000E+00 Inputs low412 3.500E-07 4.000E-07 5.000E-08 Inputs low413 4.000E-07 3.500E-07 -5.000E-08 Inputs low414 3.000E-07 3.500E-07 5.000E-08 Inputs low415 3.000E-07 4.000E-07 1.000E-07 Inputs low416 3.000E-07 3.500E-07 5.000E-08 Control unit - no radiation exposure417 4.000E-07 3.500E-07 -5.000E-08 Control unit - no radiation exposure

Biased StatisticsAverage 3.700E-07 9.900E-07Std Dev 2.739E-08 8.728E-07Ps90%/90% (+KTL) 4.451E-07 3.383E-06Ps90%/90% (-KTL) 2.949E-07 -1.403E-06Un-Biased StatisticsAverage 3.400E-07 3.700E-07Std Dev 4.183E-08 2.739E-08Ps90%/90% (+KTL) 4.547E-07 4.451E-07Ps90%/90% (-KTL) 2.253E-07 2.949E-07Specification 2.000E-06 2.500E-04Status PASS PASS

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Parameter icchlow6p0v_1Total Dose

Device 0 10 Delta Exposure Bias Conditions406 4.500E-07 4.000E-07 -5.000E-08 Inputs high407 4.000E-07 4.000E-07 0.000E+00 Inputs high408 4.000E-07 4.500E-07 5.000E-08 Inputs high409 4.500E-07 4.000E-07 -5.000E-08 Inputs high410 3.500E-07 4.000E-07 5.000E-08 Inputs high411 4.000E-07 4.000E-07 0.000E+00 Inputs low412 3.500E-07 6.000E-07 2.500E-07 Inputs low413 4.500E-07 4.000E-07 -5.000E-08 Inputs low414 4.000E-07 4.500E-07 5.000E-08 Inputs low415 4.000E-07 4.500E-07 5.000E-08 Inputs low416 4.000E-07 4.000E-07 0.000E+00 Control unit - no radiation exposure417 4.000E-07 3.500E-07 -5.000E-08 Control unit - no radiation exposure

Biased StatisticsAverage 4.100E-07 4.100E-07Std Dev 4.183E-08 2.236E-08Ps90%/90% (+KTL) 5.247E-07 4.713E-07Ps90%/90% (-KTL) 2.953E-07 3.487E-07Un-Biased StatisticsAverage 4.000E-07 4.600E-07Std Dev 3.536E-08 8.216E-08Ps90%/90% (+KTL) 4.969E-07 6.853E-07Ps90%/90% (-KTL) 3.031E-07 2.347E-07Specification 2.000E-06 2.500E-04Status PASS PASS

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