rffc5071/5072 - farnell

1 of 20

Optimum Technology Matching ® Applied

GaAs HBT

InGaP HBTGaAs MESFET

SiGe BiCMOSSi BiCMOSSiGe HBT

GaAs pHEMTSi CMOSSi BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2010, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

BiFET HBTLDMOS

RFFC5071/5072WIDEBAND SYNTHESIZER/VCO WITH

INTEGRATED 6 GHz MIXER

The RFFC5071 and RFFC5072 are reconfigurable frequency conversion deviceswith integrated fractional-N phased locked loop (PLL) synthesizer, voltage con-trolled oscillator (VCO) and either one or two high linearity mixers. The fractional-Nsynthesizer takes advantage of an advanced sigma-delta modulator that deliversultra-fine step sizes and low spurious products. The PLL/VCO engine combined withan external loop filter allows the user to generate local oscillator (LO) signals from85 MHz to 4200 MHz. The LO signal is buffered and routed to the integrated RF mix-ers which are used to convert frequencies ranging from 30 MHz to 6000 MHz. Themixer bias current is programmable and can be reduced for applications requiringlower power consumption.

Both devices can be configured to work as signal sources by bypassing the inte-grated mixers. Device programming is achieved via a simple 3-wire serial interface.In addition, a unique programming mode allows up to four devices to be controlledfrom a common serial bus. This eliminates the need for separate chip-select controllines between each device and the host controller. Up to six general purpose out-puts are provided, which can be used to access internal signals (e.g. the LOCK sig-nal) or to control front end components. Both devices operate with a 2.7 V to 3.3 Vpower supply.

Features 85 MHz to 4200 MHz LO

Frequency Range

Fractional-N Synthesizer with Very Low Spurious Levels

Typical Step Size 1.5 Hz

Fully Integrated Low Phase Noise VCO and LO Buffers

High Linearity RF Mixer(s)

30 MHz to 6000 MHz Mixer Frequency Range

Input IP3 +23 dBm

Mixer Bias Adjustable for Low Power Operation

Full Duplex Mode (RFFC5071)

2.7 V to 3.3 V Power Supply

Low Current Consumption

3- or 4-Wire Serial Interface

Applications Diversity Receivers

Software Defined Radios

Wideband Radios

Frequency Band Shifters

Point-to-Point Radios

WiMax/LTE Infrastructure

Satellite Communications

Prelim DS101020

Proposed

Package: QFN, 32-Pin, 5 mm x 5 mm

RFFC5071/5072 Wideband Synthe-sizer/VCO with Integrated 6 GHz Mixer

2 of 20

RFFC5071/5072 Proposed

Prelim DS1010207628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected].

Absolute Maximum Ratings

Parameter Rating UnitSupply Voltage (VDD) -0.5 to +3.6 V

Input Voltage (VIN) any pin -0.3 to VDD + 0.3 V

RF/IF mixer input power +15 dBm

Operating Temperature Range -40 to +85 °C

Storage Temperature Range -40 to +150 °C

ParameterSpecification

Unit ConditionMin. Typ. Max.

ESD RequirementslHuman Body Model 2000 V General

1000 V RF Pins

Machine Model 200 V General

100 V RF Pins

Operating ConditionsSupply voltage (VDD) 2.7 3.0 3.3 V

Temperature (TOP) -40 + 85 °C

Logic Inputs/Outputs (VDD=Supply to DIG_VDD pin)

Input low voltage -0.3 +0.5 V

Input high voltage 1.5 VDD V

Input low current -10 +10 A Input=0V

Input high current -10 +10 A Input=VDD

Output low voltage 0 0.2*VDD V

Output high voltage 0.8*VDD VDD V

Load resistance 10 kΩ

Load capacitance 20 pF

StaticSupply Current (IDD) with 1GHz LO 100 mA Low current, MIX_IDD=1, one mixer enabled.

125 mA High linearity, MIX_IDD=6, one mixer enabled.

Standby 2 mA Reference oscillator and bandgap only.

Power Down Current 300 A ENBL=0 and REF_STBY=0

Mixer 1/2 (Mixer output driving 4:1 balun)Gain -2 dB Not including balun losses

Noise Figure 10 dB Low current setting

13 dB High linearity setting

IIP3 +10 dBm Low current setting

+23 dBm High linearity setting

Input port frequency range 30 6000 MHz

Mixer input return loss 10 dB 100Ω differential

Output port frequency range 30 4500 MHz

Reference OscillatorExternal reference frequency 10 104 MHz

Reference divider ratio 1 7

External reference input level 500 800 1500 mVp-p AC-coupled

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor-mance or functional operation of the device under Absolute Maximum Rating condi-tions is not implied.

RoHS status based on EU Directive 2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli-cation circuitry and specifications at any time without prior notice.

3 of 20

RFFC5071/5072Proposed


ParameterSpecification

Unit ConditionMin. Typ. Max.

Synthesizer (Loop bandwidth of 200 KHz, 52MHz reference)Synthesizer output frequency 85 4200 MHz

Phase detector frequency 52 MHz

Phase noise (LO=1GHz) -108 dBc/Hz 10 kHz offset

-108 dBc/Hz 100 kHz offset

-135 dBc/Hz 1 MHz offset

0.19 ° RMS integrated from 1 kHz to 40 MHz

Phase noise (LO=2GHz) -102 dBc/Hz 10 kHz offset

-102 dBc/Hz 100 kHz offset

-130 dBc/Hz 1 MHz offset

0.32 ° RMS integrated from 1kHz to 40 MHz

Normalized phase noise floor -214 dBc/Hz Measured at 20 kHz to 30 kHz offset

4 of 20



Note 1: An RC low-pass filter could be used on this line to reduce digital noise.

Note 2: If the device is under software control this input can be configured as a general purpose output (GPO).

Note 3: Connect a 51 K resistor from this pin to ground. This pin is sensitive to low frequency noise injection.

Note 4: DC voltage should not be applied to this pin. Use either an AC coupling capacitor as part of lumped element matchingnetwork or a transformer (see evaluation board schematic).

Note 5: This pin must be connected to ANA_VDD2 using an RF choke or center-tapped transformer (see evaluation board schematic).

Pin Function Description1 ENBL/GPO5 Device Enable pin. See note 1 and 2.

2 EXT_LO External local oscillator input.

3 EXT_LO_DEC Decoupling pin for external local oscillator.

4 REXT External bandgap bias resistor. See note 3.

5 ANA_VDD1 Analog supply. Use good RF decoupling.

6 LFILT1 Phase detector output. Low-frequency noise-sensitive node.

7 LFILT2 Loop filter op-amp output. Low-frequency noise-sensitive node.

8 LFILT3 VCO control input. Low-frequency noise-sensitive node.

9 MODE/GPO6 Mode select pin. See note 1 and 2.

10 REF_IN Reference input. Use AC coupling capacitor.

11 NC12 TM Connect to ground.

13 MIX1_IPN Differential input 1 (see note 4). On RFFC5072 this pin is NC.

14 MIX1_IPP Differential input 1 (see note 4). On RFFC5072 this pin is NC.

15 GPO1/ADD1 General purpose output / MultiSlice address bit.

16 GPO2/ADD2 General purpose output / MultiSlice address bit.

17 MIX1_OPN Differential output 1 (see note 5). On RFFC5072 this pin is NC.

18 MIX1_OPP Differential output 1 (see note 5). On RFFC5072 this pin is NC.

19 DIG_VDD Digital supply. Should be decoupled as close to the pin as possible.

20 NC21 NC22 ANA_VDD2 Analog supply. Use good RF decoupling.

23 MIX2_IPP Differential input 2 (see note 4).

24 MIX2_IPN Differential input 2 (see note 4).

25 GPO3/FM General purpose output / frequency control input.

26 GPO4/LD/DO General purpose output / Lock detect output / serial data out.

27 MIX2_OPN Differential output 2 (see note 5).

28 MIX2_OPP Differential output 2 (see note 5).

29 RESETX Chip reset (active low). Connect to DIG_VDD if asynchronous reset is not required.

30 ENX Serial interface select (active low). See note 1.

31 SCLK Serial interface clock. See note 1.

32 SDATA Serial interface data. See note 1.

Exposed paddle Ground reference, should be connected to PCB ground through a low impedance path.

5 of 20



Detailed Functional Block Diagram

6 of 20



RFFC5071 Pin Out

RFFC5072 Pin Out

7 of 20



Wideband Application Schematic

51K

R1

33pF

C1

33pF

C2

33pF

C3

33pF

C5

VD

DA

2

VD

DD

8.2p

FC8

180p

FC9

330p

FC1

0

22K

R3

470R

R2

VD

DA

2 VD

DA

2

100p

FC2

0

100p

FC

21

100p

FC2

3

100p

FC

24

100p

FC

26

100p

FC2

7

100p

FC2

8

100p

F

C29

100p

F

C30

1

2

J1 RF_O

P2

1

2

J2 RF_I

P2

1

2

J3 RF_O

P1

1

2

J4 RF_I

P1

VD

DA

1

33pF

C13

33pF

C14

33pF

C15

1nF

C16

330p

FC

17

470R

R6

100p

F

C6

RF_O

P2_P

RF_O

P2_N

RF_I

P2_P

RF_I

P2_N RF

_OP1

_N

RF_O

P1_P

RF_O

P1

RF_I

P2

RF_O

P2

RF_I

P1_N

RF_I

P1_P

10nF

C19

10nF

C18

43

612

T2 RFX

F950

3

4

36

12

T3 RFX

F855

3

43

612

T4 RFX

F950

3

4

36

12

T1 RFX

F855

3

50 O

HM

50 O

HM

50 O

HM

50 O

HM

RF_I

P1

10nF

C34

33pFC3

6

33pF

C35

LFIL

T3

LFIL

T3

LFIL

T1

LFIL

T1

LFIL

T2

LFIL

T2

Loop

Filt

er

470R

R9

GPI

O2

GPI

O1

GPIO4

GPI

O3

220R

R25

ENBL

SDA

TA

SCLK

ENX

RESE

TX

MO

DE

XTALP 10

ENBL

1

EXT_

LO2

EXT_

LO_D

EC3

REX

T4

AN

A_V

DD

15

LFIL

T16

LFIL

T27

LFIL

T38

MODE 9

XTALN 11

GPIO1 15

TM 12

MIX1_IO1N 13

MIX1_IO1P 14

GPIO2 16

AN

A_V

DD

222

MIX

1_IF

_IO

2N17

MIX

1_IF

_IO

2P18

DIG

_VD

D19

NC

20

NC

21

RESETX29

MIX

2_IF

_IO

2P23

MIX

2_IF

_IO

2N24

GPIO325

GPIO426

MIX2_IO1P27

MIX2_IO1N28

SDATA32

ENX30

SCLK31

GND 33

U1

RFF

C50

71_R

FFC

5072

10nF

C44

120R

R31

470R

R32

VD

DA

2

10nFC4

3

D1

GRE

EN

LOCK

DET

ECT

LED

VC

1

OU

T3

GN

D2

VCC

4

U2

VCT

CXO

+2.8

V

VD

DA

2

RFFC

5071

Onl

y

8 of 20



Narrowband 3.7 GHz Application Schematic

51K

R1

33pF

C1

33pF

C2

33pF

C3

33pF

C5

VD

DA

2

VD

DD

8.2p

FC8

180p

FC9

330p

FC1

0

22K

R3

470R

R2

VD

DA

2

100p

FC2

3

100p

FC

24

100p

FC

26

100p

FC2

7

100p

FC2

8

15pF

C29

15pF

C30

1

2

J1 RF_O

P2

1

2

J2 IF_I

P2

1

2

J3 IF_O

P1

1

2

J4 RF_I

P1

VD

DA

1

33pF

C13

33pF

C14

33pF

C15

1nF

C16

330p

FC

17

470R

R6

RF_O

P2_P

RF_O

P2_N

IF_I

P2_P

IF_I

P2_N IF

_OP1

_N

IF_O

P1_P

IF_O

P1IF_I

P2

RF_O

P2

RF_I

P1_N

RF_I

P1_P

10nF

C19

10nF

C18

43

612

T2 RFX

F950

3

4

36

12

T3 RFX

F855

3

50 O

HM

50 O

HM

50 O

HM

50 O

HM

RF_I

P1

10nF

C34

33pFC3

6

33pF

C35

LFIL

T3

LFIL

T3

LFIL

T1

LFIL

T1

LFIL

T2

LFIL

T2

Loop

Filt

er

470R

R9

GPI

O2

GPI

O1

GPIO4

GPI

O3

220R

R25

ENBL

SDA

TA

SCLK

ENX

RESE

TX

MO

DE

XTALP 10

ENBL

1

EXT_

LO2

EXT_

LO_D

EC3

REX

T4

AN

A_V

DD

15

LFIL

T16

LFIL

T27

LFIL

T38

MODE 9

XTALN 11

GPIO1 15

TM 12

MIX1_IO1N 13

MIX1_IO1P 14

GPIO2 16

AN

A_V

DD

222

MIX

1_IF

_IO

2N17

MIX

1_IF

_IO

2P18

DIG

_VD

D19

NC

20

NC

21

RESETX29

MIX

2_IF

_IO

2P23

MIX

2_IF

_IO

2N24

GPIO325

GPIO426

MIX2_IO1P27

MIX2_IO1N28

SDATA32

ENX30

SCLK31

GND 33

U1

RFF

C50

71_R

FFC

5072

10nF

C44

120R

R31

470R

R32

VD

DA

2

10nFC4

3

D1

GRE

EN

LOCK

DET

ECT

LED

VC

1

OU

T3

GN

D2

VCC

4

Y1

VCT

CXO

+2.8

V

VD

DA

2

RFFC

5071

Onl

y

JOH

AN

SON

3700

BL15

B050

123 4

56

U3

VD

DA

215

pFC2

1

JOH

AN

SON

3700

BL15

B200

123 4

56

U2

L1 2.2n

H

Mix

er 2

Up

Conv

ersio

n Ci

rcui

t

Mix

er 1

Dow

n Co

nver

sion

Circ

uit

9 of 20



Typical Performance Characteristics: SynthesizerVDD = +3 V and TA = +27 °C unless stated.

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dB

c/H

z)

Offset Frequency (KHz)

Synthesizer Phase Noise5200MHz VCO Frequency, 26MHz Crystal Oscillator

2600MHz

1300MHz

650MHz

325MHz

162.5MHz

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dB

c/H

z)



2600MHz

1300MHz

650MHz

325MHz

162.5MHz

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dB

c/H

z)



3000MHz

1500MHz

750MHz

375MHz

187.5MHz

93.75MHz

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dB

c/H

z)



3000MHz

1500MHz

750MHz

375MHz

187.5MHz

93.75MHz

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dB

c/H

z)



4000MHz

2000MHz

1000MHz

500MHz

250MHz

125MHz

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

1 10 100 1000 10000 100000

Phas

e N

oise

(dBc

/Hz)



4000MHz

2000MHz

1000MHz

500MHz

250MHz

125MHz

10 of 20



Typical Performance Characteristics: Synthesizer and VCOVDD = +3 V and TA = +27 °C unless stated.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 600 1200 1800 2400 3000 3600 4200

RM

S In

tegr

ated

Pha

se N

oise

(Deg

rees

)

LO Frequency (MHz)

Synthesiser RMS Integrated Phase NoiseIntegration Bandwidth 1KHz to 40MHz

26MHz TCXO

52MHz TCXO

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

10.0 100.0 1000.0 10000.0 100000.0

Phas

e N

oise

(dB

c/H

z)


VCO Phase NoiseWith LO Divide by 1

4000MHz VCO2

3500MHz VCO2

3000MHz VCO1

-160.0

-150.0

-140.0

-130.0

-120.0

-110.0

-100.0

-90.0

-80.0

-70.0

-60.0

10.0 100.0 1000.0 10000.0 100000.0

Phas

e N

oise

(dB

c/H

z)


VCO Phase NoiseWith LO Divide by 2

2500MHz VCO3

2000MHz VCO2

1500MHz VCO1

Note:

• 26 MHz Crystal Oscillator: NDK ENA3523A

• 52 MHz Crystal Oscillator: NDK ENA3560A

11 of 20



Typical Performance Characteristics: VCOVDD = +3 V and TA = +27 °C unless stated.

1200

1300

1400

1500

1600

1700

1800

0 20 40 60 80 100 120

VCO

Fre

quen

cy (M

Hz)

CT_CAL Word

VCO1 Frequency versus CT_CALVCO1 with LO Divide by 2

-40 Deg C

+27 Deg C

+85 Deg C

0

5

10

15

20

25

1200 1300 1400 1500 1600 1700 1800

Kvc

o (M

Hz/

V)

VCO Frequency /2 (MHz)

VCO1 Frequency versus KvcoLO Divide by 2

VCO1

2100

2200

2300

2400

2500

2600

2700

2800

2900

0 20 40 60 80 100 120

VCO

Fre

quen

cy (M

Hz)

CT_CAL Word


-40 Deg C

+27 Deg C

+85 Deg C

0

5

10

15

20

25

30

1600 1700 1800 1900 2000 2100 2200 2300

Kvc

o (M

Hz/

V)



VCO2

1600

1700

1800

1900

2000

2100

2200

2300

0 20 40 60 80 100 120

VCO

Fre

quen

cy (M

Hz)

CT_CAL Word


-40 Deg C

+27 Deg C

+85 Deg C

0

5

10

15

20

25

30

2200 2300 2400 2500 2600 2700 2800 2900

Kvc

o (M

Hz/

V)



VCO3

12 of 20



Typical Performance Characteristics: VCO VDD = +3 V and TA = +27 °C unless stated.

1475

1480

1485

1490

1495

1500

1505

0.0 0.5 1.0 1.5

VCO

1 F

requ

ency

/2

(MH

z)

Tuning Voltage (Volts)

VCO1 Frequency versus Tuning Voltage For the same coarse tune setting, LO divide by two

-40 Deg C

+27 Deg C

+85 Deg C

2465

2470

2475

2480

2485

2490

2495

2500

2505

2510

2515

0.0 0.5 1.0 1.5

VCO

3 F

requ

ency

/2

(MH

z)



-40 Deg C

+27 Deg C

+85 Deg C

1980

1985

1990

1995

2000

2005

2010

2015

2020

0.0 0.5 1.0 1.5

VCO

2 F

requ

ency

/2

(MH

z)



-40 Deg C

+27 Deg C

+85 Deg C

13 of 20



Typical Performance Characteristics: Supply Current VDD = +3 V and TA = +27 °C unless stated.Typical Performance Characteristics: RFMixer 2, RFFC5071 and RFFC5072

90.0

100.0

110.0

120.0

130.0

140.0

150.0

160.0

1 2 3 4 5 6 7

Curr

ent (

mA)

Mixer Bias Current Setting (MIX_IDD)

Total Supply Current versus Mixer Bias SettingOne Mixer Enabled, LO Frequency = 3500MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

80.0

90.0

100.0

110.0

120.0

130.0

140.0

1 2 3 4 5 6 7

Curr

ent (

mA

)

Mixer Bias Current Setting (MIX_IDD)

Total Supply Current versus Mixer Bias SettingOne Mixer Enabled, LO Frequency = 1000MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

RFFC5071 Typical Operating Current in mA

in Full Duplex Mode (both mixers enabled) with +3 V supply.

MIX2_IDD MIX1_IDD1 2 3 4 5 6 7

1 121 126 131 136 142 146 151

2 126 131 136 141 147 151 156

3 131 136 141 147 152 156 161

4 136 141 147 152 157 162 167

5 141 146 152 157 162 167 172

6 146 151 156 161 167 171 176

7 151 156 161 166 171 176 18160.0

70.0

80.0

90.0

100.0

110.0

120.0

130.0

140.0

150.0

160.0

100 600 1100 1600 2100 2600 3100 3600 4100

Supp

ly C

urre

nt (m

A)

LO Frequency (MHz)

Total Supply Current versus LO Frequency One Mixer Enabled, +3.0V Supply Voltage

MIX_IDD = 1

MIX_IDD = 2

MIX_IDD = 3

MIX_IDD = 4

MIX_IDD = 5

MIX_IDD = 6

MIX_IDD = 7

14 of 20



Typical Performance Characteristics: RF Mixer 1, RFFC5071 onlyVDD = +3 V and TA = +27 °C unless stated. As measured on RFFC5071 wideband evaluation board.

See application schematic on page 7.

-10.0

-9.0

-8.0

-7.0

-6.0

-5.0

-4.0

-3.0

-2.0

-1.0

0.0

400 600 800 1000 1200 1400 1600 1800 2000

Conv

ersi

on G

ain

(dB

)

RF Input Frequency (MHz)

Conversion Gain of Mixer 1IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

5.0

10.0

15.0

20.0

25.0

30.0

1 2 3 4 5 6 7

Inpu

t IP3

(dB

m)

Mixer Bias Current Setting (MIX1_IDD)

Mixer 1 Input IP3 versus Bias CurrentLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

1 2 3 4 5 6 7

Noi

se F

igur

e (d

B)


Mixer 1 Noise Figure versus Bias CurrentLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

500 750 1000 1250 1500 1750 2000

Noi

se F

igur

e (d

B)

LO Frequency (MHz)

Mixer 1 Noise Figure versus FrequencyIF Output = 100MHz

MIX_IDD = 1

MIX_IDD = 2

MIX_IDD = 3

MIX_IDD = 4

MIX_IDD = 5

MIX_IDD = 6

MIX_IDD = 7

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

1 2 3 4 5 6 7

Pin

1dB

(dB

m)


Mixer 1 Input Power for 1dB CompressionLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V0.0

5.0

10.0

15.0

20.0

25.0

30.0

0.0

5.0

10.0

15.0

20.0

25.0

30.0

500 750 1000 1250 1500 1750 2000 2250

Pin

1dB

(dBm

)

IIP3

(dBm

)


Mixer 1 Linearity PerformanceMIX_IDD = 5, +3.0V, IF Output = 100MHz

Input IP3

Pin 1dB

15 of 20



Typical Performance Characteristics: RF Mixer 2, RFFC5071 and RFFC5072VDD = +3 V and TA = +27 °C unless stated. As measured on RFFC5071/5072 wideband evaluation board.


-10.0

-9.0

-8.0

-7.0

-6.0

-5.0

-4.0

-3.0

-2.0

-1.0

0.0

400 600 800 1000 1200 1400 1600 1800 2000

Conv

ersi

on G

ain

(dB)


Conversion Gain of Mixer 2IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

5.0

10.0

15.0

20.0

25.0

30.0

1 2 3 4 5 6 7

Inpu

t IP3

(dBm

)


Mixer 2 Input IP3 versus Bias CurrentLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

1 2 3 4 5 6 7

Noi

se F

igur

e (d

B)


Mixer 2 Noise Figure versus Bias CurrentLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

500 750 1000 1250 1500 1750 2000

Noi

se F

igur

e (d

B)

LO Frequency (MHz)


MIX_IDD = 1

MIX_IDD = 2

MIX_IDD = 3

MIX_IDD = 4

MIX_IDD = 5

MIX_IDD = 6

MIX_IDD = 7

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

1 2 3 4 5 6 7

Pin

1dB

(dBm

)


Mixer 2 Input Power for 1dB CompressionLO Frequency = 1000MHz, IF Output = 100MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0.0

5.0

10.0

15.0

20.0

25.0

30.0

500 750 1000 1250 1500 1750 2000 2250

Pin

1dB

(dB

m)

IIP3

(dB

m)



Input IP3

Pin 1dB

16 of 20



Typical Performance Characteristics: RF Mixers, RFFC5071 and RFFC5072VDD = +3 V and TA = +27 °C unless stated. As measured on RFFC5071 wideband evaluation board.

See application schematic on page 7. Note: Mixer 1 plots only apply to RFFC5071.

-60.0

-50.0

-40.0

-30.0

-20.0

-10.0

0.0

400.0 600.0 800.0 1000.0 1200.0 1400.0 1600.0

Leve

l at M

ixer

1 O

utpu

t (dB

m)


LO & RF Leakage at Mixer 1 OutputRF Input Power 0dBm, MIX1_IDD = 4

IF Output at 100MHz

LO Leakage (High Side)

RF Leakage

-60.0

-50.0

-40.0

-30.0

-20.0

-10.0

0.0

400.0 600.0 800.0 1000.0 1200.0 1400.0 1600.0

Leve

l at M

ixer

2 O

utpu

t (dB

m)


LO & RF Leakage at Mixer 2 OutputRF Input Power 0dBm, MIX2_IDD = 4

IF Output at 100MHz

LO Leakage (High Side)

RF Leakage

-70.0

-60.0

-50.0

-40.0

-30.0

-20.0

-10.0

0.0

200 400 600 800 1000 1200 1400 1600 1800 2000

LO L

eaka

ge (d

Bm)

LO Frequency (MHz)

Typical LO Leakage at Mixer Output +3.0V Supply Voltage

Path 1, -40 Deg C

Path 1, +27 Deg C

Path 1, +85 Deg C

Path 2, -40 Deg C

Path 2, +27 Deg C

Path 2, +85 Deg C

40.0

50.0

60.0

70.0

80.0

90.0

100.0

0 500 1000 1500 2000 2500

Isol

atio

n (d

B)


Mixer to Mixer Isolation in Full Duplex ModeLO = RF input + 100MHz

MIX_IDD = 4

17 of 20



Typical Performance Characteristics: RF Mixers at 3.7 GHzVDD = +3 V and TA = +27 °C unless stated. As measured on 3.7 GHz narrowband evaluation board.


-10.0

-9.0

-8.0

-7.0

-6.0

-5.0

-4.0

-3.0

-2.0

-1.0

0.0

3300 3500 3700 3900 4100 4300 4500

Conv

ersi

on G

ain

(dB)


Conversion Gain of Mixer 1Down Conversion with IF Output = 200MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

0.0

5.0

10.0

15.0

20.0

25.0

30.0

1 2 3 4 5 6 7

Inpu

t IP3

(dBm

)


Mixer 1 Input IP3 versus Bias CurrentRF Frequency = 4000MHz, IF Output = 200MHz

-40 Deg C, +2.7V

-40 Deg C, +3.0V

-40 Deg C, +3.3V

+27 Deg C, +2.7V

+27 Deg C, +3.0V

+27 Deg C, +3.3V

+85 Deg C, +2.7V

+85 Deg C, +3.0V

+85 Deg C, +3.3V

-80.0

-70.0

-60.0

-50.0

-40.0

-30.0

-20.0

-10.0

3300.0 3500.0 3700.0 3900.0 4100.0 4300.0 4500.0

Leve

l at M

ixer

1 O

utpu

t (dB

m)


LO & RF Leakage at Mixer 1 OutputRF Input Power -10dBm, MIX1_IDD = 4

IF Output at 200MHz

LO Leakage (Low Side)

RF Leakage

-60.0

-50.0

-40.0

-30.0

-20.0

-10.0

0.0

3300 3500 3700 3900 4100 4300

LO L

eaka

ge (d

Bm)

LO Frequency (MHz)

Typical LO Leakage at Mixer 1 Output +3.0V Supply Voltage

-40 Deg C+27 Deg C+85 Deg C

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

3500 3600 3700 3800 3900 4000 4100 4200 4300 4400

Noi

se F

igur

e (d

B)



MIX_IDD = 1

MIX_IDD = 2

MIX_IDD = 3

MIX_IDD = 4

MIX_IDD = 5

MIX_IDD = 6

MIX_IDD = 7

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0.0

5.0

10.0

15.0

20.0

25.0

30.0

3300 3500 3700 3900 4100 4300 4500

Pin

1dB

(dBm

)

IIP3

(dBm

)



Input IP3

Pin 1dB

18 of 20



Programming InformationThe RFFC5071 and RFFC5072 share a common serial interface and control block. Please refer to the following documents for further details on programming and control:

Slice2 Register Map and Programming GuideSlice2 Mixer Programming Guide

These documents are available for download from the RFMD web-site following the link below:

http://rfmd.com/products/IntSynthMixer/

Evaluation BoardsThe evaluation boards for the RFFC5071 and RFFC5072 are provided as part of a design kit, along with the necessary cables and programming software tool to enable full evaluation of the device. The standard evaluation boards are configured with 3.7 GHz ceramic baluns on the RF ports, and wideband transformers on the IF ports.The design kits can be ordered from www.rfmd.com or from local RFMD sales offices and authorized sales channels. For ordering codes please refer to page 20.

19 of 20



Package DrawingQFN, 32-pin, 5 mm x 5 mm

20 of 20



Ordering Information

RFFC5071

RFFC5072

Part Number Description Devices/ContainerRFFC5071SB 32-pin QFN 5-piece sample bagRFFC5071SQ 32-pin QFN 25-piece sample bagRFFC5071SR 32-pin QFN 100-piece reel

RFFC5071TR7 32-pin QFN 750-piece reelRFFC5071TR13 32-pin QFN 2500-piece reel

DKFC5071 Complete Design Kit 1 box

Part Number Description Devices/ContainerRFFC5072SB 32-pin QFN 5-piece sample bagRFFC5072SQ 32-pin QFN 25-piece sample bagRFFC5072SR 32-pin QFN 100-piece reel

RFFC5072TR7 32-pin QFN 750-piece reelRFFC5072TR13 32-pin QFN 2500-piece reel

DKFC5072 Complete Design Kit 1 box

rffc5071/5072 - farnell

Documents