snp biochip with electrical detection and gold nanoparticles
DESCRIPTION
SNP Biochip with Electrical Detection and Gold Nanoparticles. 陳炳煇教授 Prof. Ping-hei Chen Department of Mechanical Engineering National Taiwan University. Array-Based Electrical Detection of DNA with Nanoparticle Probes. Single Nucleotide Polymorphism (SNP). NanoDevice. NanoDevice - PowerPoint PPT PresentationTRANSCRIPT
1 微機電熱流控制實驗室MEMSMEMS Thermal Control Lab. Thermal Control Lab.
SNP Biochip with Electrical Detection anSNP Biochip with Electrical Detection and Gold Nanoparticlesd Gold Nanoparticles
陳炳煇教授
Prof. Ping-hei Chen
Department of Mechanical Engineering
National Taiwan University
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Array-Based Electrical Detection of DNA wiArray-Based Electrical Detection of DNA with Nanoparticle Probesth Nanoparticle Probes
Single Nucleotide Polymorphism (SNP)
3 微機電熱流控制實驗室MEMSMEMS Thermal Control Lab. Thermal Control Lab.
NanoDevice
NanoDeviceNanoMaterial
Nanoparticles SNP Chip Self Assembly measurement
Integration Material Properties
Device
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PROCESS BY E-beam writer
100nm GAP
SNP ChipSNP Chip
100nm
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100nm
e-
Principle for electrical detection of Principle for electrical detection of
DNADNA
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SNP ChipSNP Chip
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Self-Assembly of AuNP MonolayerSelf-Assembly of AuNP Monolayer
Si substrate
Silicon Oxide
O OOSi Si Si Si
SH SH SH SH
Si
SH
Gold nanoparticle
O OOSiSi Si
S
Si
S S S
THMS
Silanization
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Self-Assembly of AuNP MultilayerSelf-Assembly of AuNP Multilayer
SiSiO
SiSiO O
S S S S
HS
cDNA
S S
pDNA
OSi
OSi
OSi Si
S S S S
HS
tDNA
5'
3'
S
HS
SiO
Si
SS
SiOO
Si
SS
S
S
Gold nanoparticle
Si SiSiO O
SiO
S S S S
alkanethiol-cDNA
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Single layer Multi-layer
Measurements are taken in atmosphere and at room temperature, but no solution between the electrodes
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-1.00 -0.50 0.00 0.50 1.00-3.00
-2.00
-1.00
0.00
1.00
Dra
in C
urre
nt (
pA)
D ra in Voltage (V )-1.00 -0.50 0.00 0.50 1.00
-0.02
-0.01
0.00
0.01
0.02
D rain Voltage (V )
Dra
in C
urre
nt (
A)
Monolayer Mutlilayer
No AuNP
DNA with AuNP
In atmosphere, but no solution in the gap
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A B
Fig: (A) Complementary tDNA hybridization before denatured (B) Complementary tDNA hybridization after denatured
FE-SEM images of the AuNPs before and after denatured
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Fig: (Left) IV curve for complementary tDNA hybridization before denatured (Right) IV curve for complementary tDNA hybridization after denatured
FE-SEM images of the AuNPs before and after denatured
-1 .00 -0.50 0.00 0.50 1.00-80
-40
0
40
80
Dra
in C
urre
nt (
uA)
D ra in Voltage (V )-1 .00 -0.50 0.00 0.50 1.00
-1.0
-0 .5
0.0
0.5
1.0
D ra in Voltage (V )
Dra
in C
urre
nt (
nA)
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FE-SEM images of the AuNPs multilayer by using different concentration of tDNA hybridization:
• Fig: (a) 0.1 μM, (b) 1 nM, (c) 10 pM, and (d) 1fM with the complementary cDNA and pDNA strands were assembled on the SiO2 substrates following the same procudure used for DNA detecti
on.
A B
C D
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The electronic measurement results of nano-gap measured by using different tDNA concentration
• Fig: I-V curves of the nano-gap electrode measured by using different tDNA concentration which detected in the (A) 0.1 μM, (B) 1 nM, (C) 10 pM, and (D) 1fM range. Here, tDNA were cohybridized to cDNA and pDNA in 0.3 M PBS for 2 hours in all experiments
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350nm
-1 .0 -0.5 0.0 0.5 1.0
-0.15
-0.05
0.05
0.15
-0.20
-0.10
0.00
0.10
0.20
Dra
in C
urre
nt (
nA)
G a te V o lta g e (V )
Results with 1 fM tDNA Concentration
Key: How to improve the area coverage with monolayer AuNP structure?
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FE-SEM images of the AuNPs multilayer for single-bp Mismatch:
a b
Fig. (a) FE-SEM image for multilayer of AuNPs for single-bp mismatch tDNA hybridization before denaturing. (b) FE-SEM image of AuNPs for Single-bp mismatch tDNA hybridization after denaturing. Here, the concentration of tDNA for hybridization is 1nM. The chip was immersed into a salt solution of 0.01 M NaCl and PBS buffer for 2 hours.
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FE-SEM images of the AuNPs multilayer for single-bp Mismatch:
(left) Current-voltage curve for multilayer of AuNPs with single-bp mismatch tDNA hybridization with a scanning rate of 10 mV/s.
(right) Current-voltage curve for AuNPs layer after the chip with the single-bp mismatch tDNA after denaturing.
-1 .00 -0.50 0.00 0.50 1.00-60
-20
20
60
-40
0
40D
rain
Cur
rent
(uA
)
D ra in Voltage (V )-1 .00 -0.50 0.00 0.50 1.00
-1.0
-0.5
0.0
0.5
1.0
D rain Voltage (V )
Dra
in C
urre
nt (
nA)
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CMOS processed SNPCMOS processed SNP
temperature sensor
post-process testkey
biosensor & microstructures
• 奈米粒子暨電極式微陣列生物晶片主要可分為三個部分:生物感測部分、微結構部分、溫度感測與控制機制及後製程 testkey
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CMOS processed SNPCMOS processed SNP
biosensor & microstructures
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CMOS processed SNPCMOS processed SNP
biosensor & microstructures
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CMOS processed SNPCMOS processed SNP
biosensor & microstructures
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CMOS processed SNPCMOS processed SNP
biosensor & microstructures
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CMOS processed SNPCMOS processed SNP
biosensor & microstructures
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Conclusions:
1. Electrical measurement for DNA detection is made possible through gold nanoparticles and nanogap electrodes.
2. A CMOS biochip using this electrical measurement for DNA detection is fabricated by TSMC. It proves that this biochip can be massively produced through a batch process. In future, this biochip can be used for a massive screening.
3. If the detection concentration of tDNA can be lowered to 1 fM, no PCR for tested sample is required for this biochip.
4. A single-bp mismatch between oligonucleotides can be detected by using the current technique.