solar inverters • chargers stgwa40h65fb • power factor
TRANSCRIPT
12
3
TO-24712
3
TO-3PF
TO-247 long leads1
23
G(1)
C(2, TAB)
E(3)G1C2TE3
Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A• Safe paralleling• Tight parameter distribution• Low thermal resistance
Applications• Welding• Power factor correction• UPS• Solar inverters• Chargers
DescriptionThese devices are IGBTs developed using an advanced proprietary trench gatefield-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
Product status link
STGFW40H65FB
STGW40H65FB
STGWA40H65FB
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Datasheet
DS9908 - Rev 8 - March 2021For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol ParameterValue
UnitTO-247, TO-247 long leads TO-3PF
VCES Collector-emitter voltage (VGE = 0 V) 650 V
ICContinuous collector current at TC = 25 °C 80
AContinuous collector current at TC = 100 °C 40
ICP (1) Pulsed collector current 160 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation at TC = 25 °C 283 98.6 W
VISO
Insulation withstand voltage (RMS) from all threeleads to external heat sink
(t = 1 s; TC = 25 °C)3.5 kV
TSTG Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol ParameterValue
UnitTO-247, TO-247 long leads TO-3PF
RthJC Thermal resistance, junction-to-case 0.53 1.52 °C/W
RthJA Thermal resistance, junction-to-ambient 50 °C/W
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical ratings
DS9908 - Rev 8 page 2/20
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 40 A 1.6 2
VVGE = 15 V, IC = 40 A, TJ = 125 °C 1.7
VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
- 5412 -
pFCoes Output capacitance - 198 -
Cres Reverse transfer capacitance - 107 -
Qg Total gate chargeVCC = 520 V, IC = 40 A, VGE = 0 to 15 V(see Figure 27. Gate charge test circuit)
- 210 -
nCQge Gate-emitter charge - 39 -
Qgc Gate-collector charge - 82 -
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics
DS9908 - Rev 8 page 3/20
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω (see Figure 26. Test circuit forinductive load switching)
- 40 -ns
tr Current rise time - 13 -
(di/dt)on Turn-on current slope - 2413 - A/µs
td(off) Turn-off delay time - 142 -ns
tf Current fall time - 27 -
Eon (1) Turn-on switching energy - 498 -
µJEoff (2) Turn-off switching energy - 363 -
Ets Total switching energy - 861 -
td(on) Turn-on delay time
VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω, TJ = 175 °C (seeFigure 26. Test circuit for inductive loadswitching)
- 38 -ns
tr Current rise time - 14 -
(di/dt)on Turn-on current slope - 2186 - A/µs
td(off) Turn-off delay time - 141 -ns
tf Current fall time - 61 -
Eon (1) Turn-on switching energy - 1417 -
µJEoff (2) Turn-off switching energy - 764 -
Ets Total switching energy - 2181 -
1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB.2. Including the tail of the collector current.
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics
DS9908 - Rev 8 page 4/20
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs. case temperature forTO-247 and TO-247 long leads
IGBT230216EWF6GPDT
250
200
150
100
50
00 25 50 75 100 125 150
PTOT (W)
TC (°C)
VGE = 15 V, TJ ≤ 175 °C
Figure 2. Collector current vs. case temperature forTO-247 and TO-247 long leads
IGBT230216EWF6GCCT
80
60
40
20
00 25 50 75 100 125 150
IC (A)
TC (°C)
VGE = 15 V, TJ ≤ 175 °C
Figure 3. Power dissipation vs. case temperature forTO-3PF
GADG250220211536MT
90
60
30
025 75 125 175
PTOT[W]
TC °[C]
VGE = 15 V, TJ ≤ 175 °C
Figure 4. Collector current vs. case temperature forTO-3PF
GADG250220211537MT
40
30
20
10
025 75 125 175
IC[A]
TC [°C]
VGE = 15 V, TJ ≤ 175 °C
Figure 5. Output characteristics (TJ = 25 °C)
IGBT230216EWF6GOC25
140
120
100
80
60
40
20
00 1 2 3 4
IC (A)
VCE (V)
VGE = 15 V13 V
11 V
9 V
Figure 6. Output characteristics (TJ = 175 °C)
IGBT230216EWF6GOC175
140
120
100
80
60
40
20
00 1 2 3 4
IC (A)
VCE (V)
VGE = 15 V
13 V
11 V
9 V
7 V
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)
DS9908 - Rev 8 page 5/20
Figure 7. VCE(sat) vs. junction temperature
IGBT230216EWF6GVCET
2.4
2.2
2.0
1.8
1.6
1.4
1.2-75 -25 25 75 125 175
VCE(SAT) (V)
TJ (°C)
VGE = 15 V IC = 80 A
IC = 40 A
IC = 20 A
Figure 8. VCE(sat) vs. collector current
IGBT230216EWF6GVCEC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.00 10 20 30 40 50 60 70
VCE(SAT) (V)
IC (A)
VGE = 15 VTJ = 175 °C
TJ = 25 °C
TJ = -40 °C
Figure 9. Collector current vs. switching frequency forTO-247 and TO-247 long leads
IGBT230216EWF6GCCS
100
80
60
40
20
010 0 10 1 10 2
IC (A)
f (kHz)
Rectangular current shape(duty cycle = 0.5, VCC = 400 VRG = 5 Ω, VGE = 0/15 V , TJ = 175 °C
TC = 80 °C
TC = 100 °C
Figure 10. Collector current vs. switching frequency forTO-3PF
GADG250220211539MT
50
40
30
10
010 0 10 1 10 2
IC[A]
f (kHz)
Rectangular current shape(duty cycle = 0.5, VCC = 400 V, RG = 5 Ω, VGE= 0/15 V , TJ = 175 °C
TC = 80 ºC
20TC = 100 ºC
Figure 11. Forward bias safe operating area for TO-247and TO-247 long leads
IGBT230216EWF6GFSOA
10 2
10 1
10 0
10 0 10 1 10 2
IC (A)
VCE (V)
single pulse, TC = 25°CTJ ≤ 175 °C, VGE = 15 V
tp = 10 µs
tp = 100 µs
tp = 1 ms
Figure 12. Forward bias safe operating area for TO-3PF
GADG250220211538SOA
10 2
10 1
10 0
10 -1
10 0 10 1 10 2
IC (A)
VCE (V)101
tp =10 µs
tp =100 µs
tp =1 mssingle pulse
TJ≤175 °CTC=25 °C
VGE=15 V
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)
DS9908 - Rev 8 page 6/20
Figure 13. Transfer characteristics
IGBT230216EWF6GTCH
140
120
100
80
60
40
20
06 7 8 9 10
IC (A)
VGE (V)
VCE = 5 V
TJ = 175 °C
TJ = 25 °C
TJ = 25 °C
TJ = 175 °C
Figure 14. Normalized VGE(th) vs. junction temperature
IGBT230216EWF6GNVGE
1.2
1.0
0.8
0.6
0.4-75 -25 25 75 125 175
VGE(th) (Norm.)
TJ (°C)
VCE = VGE , IC = 1 mA
Figure 15. Normalized V(BR)CES vs. junction temperature
IGBT230216EWF6GNVBR
1.12
1.08
1.04
1.00
0.96
0.92
0.88-75 -25 25 75 125 175
V(BR)CES (Norm.)
TJ (°C)
IC = 2 mA
Figure 16. Capacitance variation
IGBT230216EWF6GCVR
10 3
10 2
10 1
10 -1 10 0 10 1 10 2
C (pF)
VCE (V)
CRES
COES
CIES
Figure 17. Gate charge vs. gate-emitter voltage
IGBT230216EWF6GGCGE
15
10
5
00 40 80 120 160 200
VGE (V)
Qg (nC)
VCC = 520 V, IC = 40 A
Figure 18. Switching energy vs. collector current
IGBT230216EWF6GSLC
3000
2400
1800
1200
600
00 10 20 30 40 50 60 70
E (µJ)
IC (A)
VCC = 400 V, RG = 5 ΩVGE = 15 V, TJ = 175 °C
Eoff
Eon
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)
DS9908 - Rev 8 page 7/20
Figure 19. Switching energy vs. gate resistance
IGBT230216EWF6GSLG
2000
1600
1200
800
4000 4 8 12 16 20
E (µJ)
RG (Ω)
VCC = 400 V, IC = 40 AVGE = 15 V, TJ = 175 °C
Eoff
Eon
Figure 20. Switching energy vs. temperature
IGBT230216EWF6GSLT
1200
800
400
0-75 -25 25 75 125 175
E(μJ)
TJ (°C)
VCC = 400 V, IC = 40 ARG = 5 Ω, VGE = 15 V
Eoff
Eon
Figure 21. Switching energy vs. collector emitter voltage
IGBT230216EWF6GSLV
2000
1600
1200
800
400
0150 200 250 300 350 400 450 500
E (µJ)
VCE (V)
IC = 40 A, RG = 5 ΩVGE = 15 V, TJ = 175 °C
Eoff
Eon
Figure 22. Switching times vs. collector current
IGBT230216EWF6GSTC
10 2
10 1
10 00 10 20 30 40 50 60 70
t (ns)
IC (A)
VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C
t d(off)
t d(on)
tr
tf
Figure 23. Switching times vs. gate resistanceIGBT230216EWF6GSTR
10 2
10 10 4 8 12 16 20
t (ns)
RG (Ω)
VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C
tf
td(off)
tr
td(on)
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)
DS9908 - Rev 8 page 8/20
Figure 24. Thermal impedance for TO-247 and TO-247 long leads
ZthTO2T_A
10-1
10-2
10-5 10-4 10-3 10-2 10-1
K
tp (s)
δ = 0.5
δ = 0.2
δ = 0.1 δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
Figure 25. Thermal impedance for TO-3PF
10-5 10-4 10-3 tp(s)10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
δ=0.5
10-2
10-1
10
ZthTOF3T_A
Zth = k*RthJCδ = tp/t
tp
t
STGFW40H65FB, STGW40H65FB, STGWA40H65FBElectrical characteristics (curves)
DS9908 - Rev 8 page 9/20
3 Test circuits
Figure 26. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 27. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 28. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTest circuits
DS9908 - Rev 8 page 10/20
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3PF package information
Figure 29. TO-3PF package outline
7627132_6
STGFW40H65FB, STGW40H65FB, STGWA40H65FBPackage information
DS9908 - Rev 8 page 11/20
Table 6. TO-3PF mechanical data
Dim.mm
Min. Typ. Max.
A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10.00 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15.00
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-3PF package information
DS9908 - Rev 8 page 12/20
4.2 TO-247 package information
Figure 30. TO-247 package outline
aaa
0075325_10
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 package information
DS9908 - Rev 8 page 13/20
Table 7. TO-247 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
aaa 0.04 0.10
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 package information
DS9908 - Rev 8 page 14/20
4.3 TO-247 long leads package information
Figure 31. TO-247 long leads package outline
8463846_2_F
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 long leads package information
DS9908 - Rev 8 page 15/20
Table 8. TO-247 long leads package mechanical data
Dim.mm
Min. Typ. Max.
A 4.90 5.00 5.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25
STGFW40H65FB, STGW40H65FB, STGWA40H65FBTO-247 long leads package information
DS9908 - Rev 8 page 16/20
5 Ordering information
Table 9. Order codes
Order code Marking Package Packing
STGFW40H65FB GFW40H65FB TO-3PF
TubeSTGW40H65FB GW40H65FB TO-247
STGWA40H65FB GWA40H65FB TO-247 long leads
STGFW40H65FB, STGW40H65FB, STGWA40H65FBOrdering information
DS9908 - Rev 8 page 17/20
Revision history
Table 10. Document revision history
Date Revision Changes
30-Aug-2013 1 Initial release
11-Sep-2013 2 Document status changed from preliminary to production data. Inserted Section 2.1: Electricalcharacteristics (curves).
28-Feb-2014 3 Updated title and description in cover page.
05-Mar-2014 4 Updated units in Table 6: Switching characteristics (inductive load).
11-Apr-2014 5 Added part number and references for the device in a TO-3PF package.
03-Nov-2016 6
Added device in TO-247 long leads and updated the document accordingly.
Updated Section 2.1: Electrical characteristics (curves) and Section 4.3: TO-247 long leads,package information.
Minor text changes.
21-Mar-2017 7
Updated Table 1: "Device summary".
Added Figure 26: "Thermal impedance for TO-3PF".
Minor text changes
09-Mar-2021 8
The part number STGWT40H65FB has been removed and the document has been updatedaccordingly.
Updated title in cover page.
Updated Section 1 Electrical ratings and Section 2.1 Electrical characteristics (curves).
Minor text changes
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
DS9908 - Rev 8 page 18/20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
STGFW40H65FB, STGW40H65FB, STGWA40H65FBContents
DS9908 - Rev 8 page 19/20
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
DS9908 - Rev 8 page 20/20