STS AOE

Refer to the  page for information on materials compatible with this tool.Material and Process CompatibilityEquipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See   for more info.Problem Reporting Guide

Status Down

Issue Date and Description 1/28/2022

Estimated Fix Date and Comment The pump won't start.   We're replacing the pump and we hope to have an update on Monday Jan 31.

Responding Staff Francis

eLog: Submit eLog: View/Edit

STS AOE - Internal Resources

iLab Name: STS AOEiLab Kiosk: BRK Etch CoreFIC: Dimitrios PeroulisOwner: Jerry Shepard

Cleanroom - L BayLocation:4”/100 mmMaximum Wafer Size: 

1 Overview1.1 General Description1.2 Fluorine-to-Carbon Ratio Model

2 Specifications2.1 Available Chemistry2.2 RF Plasma Controls2.3 Available Standard Recipes2.4 Sample Requirements and Preparation2.5 Approved Mask Materials

3 Standard Operating Procedure3.1 Make Log Book Entry3.2 Verify there is no wafer in the chamber3.3 Vent the Load Lock3.4 Load your wafer into the load lock

3.5 Pump down the Load Lock3.6 Transfer the wafer to the Etch Chamber3.7 Edit / Load Process Recipe3.8 Run the Etch Process3.9 Transfer the wafer from the Etch Chamber to the load lock3.10 Vent the Load Lock to remove your sample

4 Properly Executing an O2 Plasma Chamber Clean5 Recipe Editor Instruction

5.1 Recipe Editor Screen5.2 Recipe Editor Screen Navigation Panel

6 Questions & Troubleshooting7 Process Library8 References

OverviewType Materials Restricted

MaterialsAvailable Gases

Max RF Power

Wafer Size

ICP RIE Silicon, Silicon Nitride, Silicon Oxide, Silicon Carbide / Photo Ni, Cr, and Alresist,

Au, Ag, Pt, Cu O , Ar, SF ,C F2 6 4

8

3000 ICP / 1200 Platen

4 inch (100 mm) SEMI Specification

General Description

The STS AOE Deep Reactive Ion Etch (DRIE) system is designed to provide high-aspect-ratio etching of dielectric films using an inductively coupled plasma (ICP) and reactive Fluorine chemistry.

Fluorine-to-Carbon Ratio Model

Specifications

Available Chemistry

Gas Min Recommended

Flow (sccm)

Max Recommended

Flow (sccm)

Mass Flow

Controller Specified

Max (sccm)

Notes

C F 4 8Lo

2 38 40 F/C ratio of 2. Used when recipes call for flow rates up to ~30 sccm of C F .4 8

O2 5 94 99.1 Addition of O increases fluorine concentration by combining with carbon to form CO and CO .2 2The carbon would otherwise bond to fluorine and lower concentration.

1.

CF4 2.2 40.8 43 F/C ratio of 4.

He 25 475 500 Helium is a noble gas that can be added to dilute a gas mixture for controlling etch rate or other aspects of the etch. Because it is inert, this does not effect the chemistry of the plasma. It is also added to increase ion bombardment which reduces passivization enough to etch oxide and achieve vertical sidewall. Concentrations range anywhere from 50% of the mixture to over 10x that of the reactive species.

C F 4 8High

10 190 200 F/C ratio of 2. Used when recipes call for flow rates between 30 and 190 sccm of C4F8.

SF6 25 475 500 SF6 etches Si much faster than SiO2 and is a good choice when using an oxide mask to etch Si. SF6 is also a good choice when etching SiN with an oxide etch stop layer.

Ar 3.6 67.4 71 Argon is a heavy gas that can be added to dilute a gas mixture for controlling etch rate or other aspects of the etch. Because it is inert, this does not effect the chemistry of the plasma. It is also added to increase ion bombardment which reduces passivization enough to etch oxide and achieve vertical sidewall. Concentrations range anywhere from 50% of the mixture to over 10x that of the reactive species.

Notes:

Mass flow controllers are not good at controlling flows at or near their design limits.  Trying to control within 5% of the gas flow limits will result in process interruptions and difficulty in repeating processes.  It is best practice to scale all gas flows so you are not operating within these limitations.  If you cannot do this, speak with staff for alternatives.

RF Plasma Controls

RF Source Max Power (watts)

ICP Coil Power 3000

Platen Power 1200

Available Standard Recipes

R RECIPENAME

CONTINUOUS PROCESS S1

APC AUTO S1

S1 DESCRIPTION

MINUTES S1

SECONDS S1

COIL LOAD CAP S1

COIL TUNE CAP S1

PLATEN LOAD CAP S1

PLATEN TUNE CAP S1

STRIKE PRESS S1

PRESS S1

1 O2 Cleaning OFF ON Sample Clean 20 0 50 75 31 54 10 4

2 SiOx PR STD OFF ON 200 SIO Etch 3 0 60 75 50 50 10 4

3 SiOx PR FAST OFF ON 1000 SIO Etch 3 0 60 75 50 50 10 4

4 SIOx Si STD OFF ON 5000 SIO Etch 3 0 60 75 50 50 10 4

5 SIOx MTL OFF ON 300 SIO Etch 3 0 60 75 50 50 10 4

6 Quartz MTL OFF ON 3000 Quartz Etch 3 0 60 75 50 50 10 6

7 SIN PR STD OFF ON 4000 SIN Etch 3 0 60 75 50 50 10 4

8 SIC MTL STD OFF ON ??? SIC Etch 3 0 50 60 40 54 20 15

9 Cham Clean OFF OFF Service 30 0 60 75 50 50 0 0

10 LIP BURN OFF ON Service 0 30 60 75 50 50 0 30

Sample Requirements and Preparation

Commonly used substrates include 300-700 um thick wafers in the following materials. (1-flat, 2-flat, no flat)SiliconFused SilicaBorofloat (Schott)

The tool's wafer handling robot is designed to fit  , therefore all samples must meet this form factor 100 mm Prime Silicon Wafersrequirement.  These wafers are kept in stock and can be purchased from the building supply room during office hours.Samples that are not full wafers must be securely mounted to a full wafer.  Samples must be bonded and not simply placed on carrier wafers, bonding aids in thermal transfer and prevents resist burning.  Recommended mounting adhesives include crystalbond 509, 555 HMP, and 590 .

Crystalbond 509 - (Bonding Temp 145 C / Viscosity 6,000 cps / Solvent Acetone)Crystalbond 555 HMP - (Bonding Temp 80 C / Viscosity 500 cps / Solvent Hot Water)

Gold (Au), Silver (Ag), Copper (Cu), and Platinum (Pt) are NOT allowed in the chamber in any amounts. Gold, silver, copper, and platinum do not have a vapor phase etch byproduct, and are therefore not allowed in the chamber. Contact the tool engineer for more information on permissible materials.

Crystalbond 590 - (Bonding Temp 180 C / Viscosity 9,000 cps / Solvent Methanol)

Photoresist (AZ 4620, AZ 9260) must be baked in a 120 C oven for at least 20 minutes.This system utilizes a weighted clamp which interferes with approximately 12 mm of the wafer perimeter. Uniformity is best achieved on the inside 3 inches (75 mm) of a 4 inch (100mm) wafer and so it is best to eliminate all patterning and on the outside 1/2 inch (12 mm) of the wafer.   Characterization of results in this region will be invalid due to the wide process variation that can be present. 

This clamp is made up of 8 ceramic "fingers" which bear down near the edge of the wafer and hold it down to the chuck.  Artifacts will be left around the perimeter of the wafer/carrier, see image below.  Sample geometry/features should avoid this area of the wafer.  The wafer rests on a lip seal, similar to an O-ring, which seals the backside for He cooling the wafer.  The wafer backside must be free of resist, debris, tape, or any other material that would interfere with the lip seal.  The lip seal is smaller than the wafer diameter by several mm, as a result the wafer will be etched from the top and bottom at the edges of the wafer.

The wafer heats up on the outside rim where cooling is less effective. The heat travels toward the center of the wafer where the wafer back side cooling removes the heat. The clamp fingers act as heat sinks and remove heat from the edge but to a lesser degree as longer process times occur. In addition to the basic process parameters, wafer temperature is a major factor in uniformity and etch rate. The higher the wafer temperature, the more aggressive the etch phase and the less resistive the masks.  This has the effect of creating a flower petal pattern outside the uniform zone.   The center area is the most uniform.  The white dots are where the wafer clamp contacts and are slightly cooler than the outside edge.  The hottest portion of the wafer is the outside edge at the midpoint between the wafers clamps. 

You must ensure there is no residue on the backside of your wafer.

Approved Mask Materials

Cured Photo ResistHigher coil powers can cause burning in resist. Plasma resistance (i.e. resistance to burning and selectivity) can be improved by curing the resist appropriately. UV baking andhard baking can give tough resist without reflow.  E-beam resist tends to have lower plasma resistance than photo-resist.

Chromium (Cr)Nickel (Ni)Silicon (Si)

Silicon masks tend to sputter at an angle near 45°, so that even when there is a substantial thickness of Si left, mask recession can cause a significant reduction in the etch profile angle.

Silicon Nitride (SiN)Silicon Oxide (SiO)Aluminum (Al)

Standard Operating ProcedureMake Log Book Entry

Use the kiosk to make your logbook entry

Log into iLab and start your reservation

Helium is delivered to the bottom of the wafer at about 10 torr of pressure. Coupled with the downward pressure of the clamp fingers, the wafer is subjected to high levels of stress. This stress needs to be kept in mind during deep etches, since thinner wafers are weaker.

Samples that will finish with less than 400 um of wafer thickness remaining must be bonded to a carrier wafer. Deep etches may require changing carrier wafer multiple times to complete the required etch depth.

Thoroughly rinse developed samples with UPW. The wafer must be free of resist developer as the chuck may be corroded by the developer.SU-8 is not allowed

Verify there is no wafer in the chamber

Generally, the previous user should have unloaded the wafer and left the chamber empty. However, the dummy wafer used for chamber cleaning does get left inside the chamber

frequently. Look for Red Unload Wafer Icon on the Operator screen, . If this icon is present for W1 or for W2, then there is a wafer inside the chamber.

If a wafer is present, skip to and unload the wafer.Unload the Wafer

*Note: When there is a transfer fault, the control sometimes is confused about the presence of the wafer in the chamber. If you unload the wafer, and nothing comes out of the chamber, you should try to load and unload a dummy wafer to make sure there is no obstruction inside the chamber. If the dummy wafer does not return, stop and contact engineering staff support, there is likely a lost wafer inside causing interference. If successful, the empty unload cycle will clear the confused condition and return the tool to normal.

Vent the Load Lock

From the Operator Screen, press the Vent Load Lock button, .

The load lock vent sequence will pump the pressure down, then purge with N , thus 2raising the pressure.This cycling of the pressure in the Load Lock Press display,

, will happen three times before fully venting the load lock. This is a purge cycle, which ensures no dangerous etch byproducts can get from the chamber during unload, and then expose the user when opening the load lock.

When the load lock is fully vented, the Load Lock Press display, , will show 750000 mTorr indicating atmospheric pressure (~760 Torr) is achieved. The lid to the load lock will sometimes open a few inches on its own, and sometimes the seal sticks enough that you have to lift it manually a bit. Lift the lid to it's full open position, it is held open with gas springs for loading and unloading the wafer.

Load your wafer into the load lock

Load the 4 inch(100 mm) wafer onto the carousel and align the wafer flat with the alignment marks on the carousel. The alignment does not need to be perfect, plus or minus 5 degrees should be sufficient. Make sure the wafer is sitting flat on the inner ledge of the carousel tray. Note the number located near the carousel tray indicating position 1 or 2.

Lower the load lock lid until it is completely closed. Pull the handle toward you to latch the lid down in preparation for pump down. Failure to do so will result in the lid springing back up a few inches with no possibility to pump down.

Note: Usually there is a dummy wafer located in the load lock in one of the two positions. This wafer is intended for you to use for running dummy processes or chamber cleans. You may leave this wafer in the load lock while performing your etch.

Note: If you bump or move the carousel out of alignment during wafer loading, this is acceptable and will not cause any problems. Simply load your wafer as described above,

when you press in the next step, the carousel will be realigned as needed.

Pump down the Load Lock

With the load lock lid latched closed, and from the Operators screen, press the Pump

Map button.

The load lid will be pulled down by the pressure difference, the latch will release on its own but lid will stay down, this is normal once the pump down has started. Looking through the window in the top of the load lock lid, you will see the carousel lift slightly, then rotate a couple of turns before finally coming to rest in the down position with carousel position one closest to the chamber. During this time, the tool is detecting which positions have wafers loaded onto them. It is also indexing the rotational position of the carousel to align with the chuck inside the chamber.

Note: If the Pump Map sequence does not complete and generates errors, press the

reset errors button. Return to the Operator screen and press again to see if the problem will self correct. If the problem persists, please stop and contact engineering support.

Transfer the wafer to the Etch Chamber

From the operator screen, click the load button corresponding to the carousel position

you loaded your sample onto. This process takes a few minutes, the load lock must be pumped down appropriately, then the transfer gate opens and you will see the carousel slide forward into the chamber. When the carousel returns to the load lock, visually check to ensure the wafer is no longer resting on the carousel tray as expected.

The backside of the wafer must be clean. Contaminants on the backside of the wafer will transfer to the chuck and lip seal causing helium leak up rate errors. This contamination can be difficult to recover from and require a significant amount of time.

If there is a wafer already loaded in the chamber, you must remove it first. See instructions here. This will be indicated by one of the Load icons being

displayed as red and will be labeled Unload.

Edit / Load Process Recipe

Navigate to the recipe editor. Scroll down to find the recipe you wish to edit / load. If necessary, edit the recipe as required.

Select the recipe and press the load button, .

Press OK at the prompt to write specified data . You will then see a

progress indicator counting up, , returning to the recipe editor screen when completed.

Press Close in the lower left corner of the screen, . The recipe that will be affected by the save prompt is indicated next to the Close button as shown. If you have made changes to the recipe, you will be presented with the traditional save prompt. Please answer NO for any standard recipes. Edits you made for time will be loaded into system memory from the step above, and your etch will run for the time you specified.

Click here for help with the recipe editor!

Run the Etch Process

From the Operator screen, click the blue start recipe button, to execute the recipe. The recipe name that is loaded into memory will be displayed on the button. In the example shown, the O2 Clean recipe will be executed when button is pressed. The blue

recipe button will change to an Abort button, , once recipe execution has started. Use this button to stop the recipe before completion.

During recipe execution, there is a status bar that displays the current status of the tool. This displays the current recipe name above the table, status in the table, and recipe name/sample name/date:time stamp below the table.

Seq Step - The current step of the overall sequence. This will advance until recipe is complete.

Start Time - Total step time will be displayed in this cell for steps that are timer based.

Time left - Shows remaining time for steps that are timer based.

Step Name - Shows a description/name for identified sequence step.

Some of the Seq Steps you will see as the recipe progresses (no user involvement is required after starting recipe):

1 - Checking Faults: Checking the system for any faults that will prevent recipe execution.

9 - Zeroing APC: References origin of VAT pressure control valve.

10 - Checking He LUR: Checking Helium leak up rate. This is a measure of how well the wafer is sealed against the chuck. Helium provides sample critical sample cooling during the etch. High leak up rates will stop recipe execution, and will dilute the etch chemistry affecting the etch process.

14 - Pumping: A set time for pumping the chamber down to base pressure before the etch process.

16 - Stabilization: Etch gas flows are activated, automatic pressure control activates, and stabilizes the chamber pressure at the recipe strike pressure setting.

17 - (Recipe Name): Execution of the etch recipe that was specified to be run. The full etch time should be displayed in the Start Time field, while a count down to completion is shown in the Time Left field.

1. 2. 3.

a. b.

i. c.

i. 4.

5.

Transfer the wafer from the Etch Chamber to the load lock

From the operator screen, click the unload button corresponding to the carousel position

that was loaded into the chamber.   This process takes a few minutes, the load lock must be pumped down appropriately, then the transfer gate opens and you will see the carousel slide forward into the chamber. When the carousel returns to the load lock, visually check to ensure the wafer is resting on the carousel tray as expected.

Vent the Load Lock to remove your sample

See instructions for venting here....

Properly Executing an O Plasma Chamber Clean2

Load a dummy wafer into the chamber.Load and start the CHAMBER CLEAN recipe.When the recipe reaches step 17, the etch recipe step, take note of the APC/Process pressure. A dirty chamber will have an APC pressure around 30 mTorr under initial conditions.

From the Operator screen, this pressure is shown as below

From the Main screen, this pressure is shown as below

As this recipe runs and the chamber is cleaned, the APC/Process pressure will decrease. This pressure will decrease to about 15 mTorr indicating the process was successful. This should take no more than 30 minutes.Following a chamber clean, a short 5 minute conditioning run, with the process conditions, is necessary to stabilize the chamber conditions for your process.

Recipe Editor Instruction

Recipe Editor Screen

Process parameters are listed across the top of the recipe table columns. Each table row is a separate recipe.

RECIPETYPE - Selecting this cell will highlight the entire row, selecting the entire recipe. This parameter cannot be edited.R RECIPENAME - The name of the process recipe.

If you are creating a new recipe, please select an unused row, indicated by "New" in R RECIPENAME column.

Use the following naming convention: Etch Mask AliasExample: " " (Silicon oxide etch with photo resist mask for Jerry SiO2 PR JSHEPARShepard)

CONTINUOUSPROCESS - Recommend . Disables the recipe timer so the process runs OFFindefinitely.

APC AUTO S1 - Recommended setting . Enables/disables pressure control.ONS1 DESCRIPTION - Step 1 process description.

If you are creating a new recipe use this field as you see fit.Total Step 1 Etch Time = MINUTES S1 + SECONDS S1

MINUTES S1 - Minutes of etching time, or plasma on time, for step 1.SECONDS S1 - Seconds of etching time for step 1.

COIL LOAD CAP S1 - Recommended . Starting position for coil load capacitor, range 0 to 100.60COIL TUNE CAP S1 - Recommended . Starting position for coil tune capacitor, range 0 to 100.70PLATEN LOAD CAP S1 - Recommended . Starting position for platen load capacitor, range 0 to 50100.PLATEN TUNE CAP S1 - Recommended . Starting position for platen tune capacitor, range 0 to 50100.STRIKE PRESS S1 - Recommend same a . Pressure at which plasma will be lit, in PRESS S1mTorr. Some plasma chemistries can be difficult to lite at low pressures, this setting can help overcome that problem. If different than PRESS S1 setting, system will stabilize on this pressure, then apply power to lite the plasma, and a few seconds later the system will move to PRESS S1 setting.PRESS S1 - Process pressure in the chamber during the etch, in mTorr.Position S1 - Default . Sets position of throttle valve when APC AUTO S1 is Off, otherwise not 0applicable, Range 0 to 100.COIL RF S1 - Maximum 3000. Process power for the plasma source, in Watts.PLATENRF S1 - Maximum 1200. Process power for the plasma bias, in Watts.C4F8 LO S1, O2 S1, CF4 S1, HE S1, C4F8 HI S1, SF6 S1, AR S1 - Gas flow settings for plasma source chemistry. See Available Chemistry here for more detail.

Note: If you continue to scroll to the right in the recipe table you will find the same set of columns as above, but all with be labeled with S2 instead of S1. Continuing to the right will repeat again up to S6. These are sequential process steps. So S1 will be executed in its entirety, then S2, and so on. Most people do not use these, and would simply create multiple one step recipes and then just manually execute them in order. This feature is geared toward repetitive, complex production type etch processes that we typically do not use.

If this is your first time here, see this first!

Setting this to ON requires a manual stop by the user!

Recipe Editor Screen Navigation Panel

In the lower right corner of the Recipe Editor screen you should see a navigation panel as shown to the

right. If you do not see this panel, click the panel expand button, in the lower right corner of the screen.

- This button will load your selected recipe into system memory so it can be ran by the tool. You must first select the entire recipe to activate this button. Do this by selecting the

cell in the first column of the recipe table, . The entire table row should be highlighted and the load button will turn red.

- Enter edit mode by clicking on the edit button. In order to change recipe values in the table cells, you must enter edit mode. When edit mode is active, the button will turn

white, . While edit mode is active, any click on the table cells will activate a pop up window for user input. If you have done this by accident, press the cancel button. Pressing Enter will change the value in the field to that displayed in the pop. Those values may or may not be the same.

- These buttons will increase and decrease the size of the font shown in the table cells. Useful if the full label is too long to be displayed in the cell.

- This button adjusts the grid pattern color scheme and progresses through a repeat cycle with multiple presses.

- Show or hide commas in large numbers.

- Page Up / Down / Left / Right on the recipe table.

- Scroll Up / Down / Left / Right on the recipe table.

Questions & TroubleshootingWhat happens if wafer unloading from the chamber fails?

First, hit the "ALARMS" button, "Reset Faults". The go back to the Operator tab and attempt to unload again.

Why can't I load a wafer?

Go to the operator screen, if a wafer is currently in the chamber there will be a red square that says UNLOAD W1(W2). This indicates a wafer is in the chamber. Unload the wafer, and proceed.

Process Library

ReferencesTypical Oxide Etch Tips and Trends (Internal Resource)

STS AOE DRIE Trends

STS AOE SOP (2007)

STS Quick Guide.pdf

VAT Controller

Recipe data gathering from other sources...

Recipe Name at the Tool Description Mask Flows (sccm) Platen RF (Watts)

Coil RF(W)

Pressure (mTorr)

Etch Rate (nm/min)

Etch/mask

CF4 O2

STD OX Etch Standard SiOx Etch Recipe

14 50 400 4

O Clean2 Oxygen Clean 50 10 2000 50

Proposed Recipes

Process Description Mask Flows (sccm) Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

C F4 8 He H2NA

Typical Process Si Mask / SiOx Etch Recipe

Si 18 300 500 1300 4 500/25

PR Mask/ SiOx Etch Recipe

PR 10 174 8 300 1000 4 300/75

Trends

Increases in values produce shown trend. More arrows indicate a stronger effect.

Profile Angle

Etch Rate

Selectivity

Non-Uniformity

STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results

Process Description Mask Flows (sccm) Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

C F4 8 O2

Metal Mask Process SiOx or Quartz Etch

Ni, Cr, Al 80 10 180 1800 6 500/10

Trends Profile Angle

Increases in values produce shown trend. More arrows indicate a stronger effect.

Etch Rate

Selectivity

Non-Uniformity

STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results

Process Description Mask Flows (sccm) Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

Pyrex/mask

C F4 8 O2 He

Metal Mask Process Pyrex Etch Cr, Al 80 10 600 1700 6 500/50

Trends

Increases in values produce shown trend. More arrows indicate a stronger effect.

Profile Angle

Etch Rate

Selectivity

Non-Uniformity

Trends with pyrex are less well defined than with other silica etches, because of the variation in composition of pyrex glasses. Also different masks respond differently to different process changes. Cr masks appear to have an optimum O2 concentration, above and below which selectivity drops. This is not generally observed with Al mask, where increasing O2 reduces selectivity.

STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results

Process Description Mask Flows (sccm) Platen RF (Watts)

Coil (W)

APC % Pressure trace

(~30 min)O2

Chamber Clean Plasma Clean / Condition

NA 99 100 1800 92 32 dirty / 20 clean

Typically after 30mm of etching, a plasma chamber clean is required. With highly polymeric processes, such as pyrex etches it is advisable to run a clean after each 20 mm of etching.

It is useful to monitor the Pressure trace on the datalog. This should have dropped, typically from around 32 to 20 for a 92% APC and 99 sccm flow after no more than about 30 minutes to a flat, stable value. If not the clean should be repeated until it has. Following a clean a short conditioning run, with the process conditions, is necessary. 20 minutes should be considered safe.

STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results

Process Description Mask O2

NA Oxygen Etch; Polymer Etch/Strip

Chamber Clean Process Chamber Chemical Clean

NA 40 20 800 40 mT Section 8.7.1 STS AOE operator manual

Chamber Clean Plasma Clean NA 50 50 1000 92% fixed APC (~30mins)

Aoest1-2.pdf

Reference Recipes

Recipe Name at the Tool Description Mask Flows (sccm)

Bias (V) needs conversion

? Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

NA PR CF (10), H (8), He (174)

700 1350 3 300/40

NA a-Si CF (15), He (300)

1200 1150 7 500/25

NA SU-8 CF (25), He (50)

1700 1100 8 700/300

NA Si CF (25), He (50), O (12)

1500 1050 7 600/180

NA Ni CF (80), O (10)

600 1200 6 550/25

NA AlO CF (17), SF(70)

250 800 30 150/1.5

*** data in table based on usual etch load of 10-15%

Handbook of Silicon Based MEMS Materials and Technologies (Second Edition); Section 21.3.3.3; Table 21.4

Recipe Name Etch Material Mask Flows (sccm) Platen RF Coil (W) Pressure Etch Rate

(Watts) (mTorr) (nm/min)O2 He CF4 C4F8 H2

O2 Cleaning NA 100 100 1500 4

SiO 1um SiO2 ?PR 174 2 8 200 1400 4 1 um

SIO 3000 SiO2 ?PR 174 10 8 200 1250 4 3000 A

SiOmetal mask SiO2 Metal 5 40 250 1250 4 3000 A

SiN 1000 SiN ?PR 250 2 8 200 1400 4 1000 A

SiN 2800 SiN ?PR 174 10 8 200 1250 4 2800 A

SiN 4000 SiN ?PR 4 20 20 200 1250 4 4000 A

SiN 1500 SiN ?PR 174 5 8 200 1250 4 1500 A

quartz Lens.set Glass ?PR 15 5 8 300 500 4 3000 A

BCB.set (Benzocyclo Butene) BCB ?PR 20 20 250 800 3 ?

STS_AOE - Instructions from Tom Lee.pdf

Recipe Name Etch Material Mask Flows (sccm) Platen RF (Watts)

Coil (W) Pressure (mTorr)

Etch Rate (nm/min)

Quartz/mask

O2 He CF4 C4F8 H2

Quartz Ni/Cr 10 80 300 1400 6 320 / 100:1 / 91.5 profile

STS AOE Quartz etch discussion.doc (notes on conversation with STS engineer)

Recipe Name Etch Material Mask Flows (sccm) Platen RF (Watts)

Coil (W) Pressure (mTorr)

Etch Rate (nm/min)

O2 He CF4 C4F8 H2

Standard Etch Rate Test SiO2 20 300 600-1800

2