24th International Conference on Defects in Semiconductors Albuquerque, NM, July 22-27, 2007

Summary of the scientific program updated May 7, 2007

SUMMARY: ORAL SESSIONS Sunday July 22, 2007 Grand Pavilion I-III 6:00 – 8:00 RECEPTION Plenary session: Grand Pavilion IV-VI SHS: Defects in Semiconductors: a historical perspective chair: George Watkins

8:00 – 8:30 Manuel Cardona and Werner Marx Defects in Semiconductors: Historical remarks and bibliometric highlights

8:30 – 9:00 David V. Lang Recollections on the origins of DLTS Monday July 23, 2007 Plenary session: Grand Pavilion IV-VI MPL: Defect engineering chair: Stefan K. Estreicher

8:30 – 9:15 Henryk Temkin Defects in semiconductor lasers

9:15 – 10:00 George K. Celler and Konstantin K. Bourdelle Splitting Materials with Implant-Induced Defects: A Path to Advanced Engineered Substrates

10:00 – 10:25 COFFEE BREAK (Pavilion court)

Parallel session: Grand Pavilion VI-V MO1: Defects in devices chair: Sam Myers

10:25 – 11:00 *N.A. Sobolev Point and extended defect engineering as a key to advancing technology of light-emitting diodes based on single crystal Si and SiGe layers

11:00 – 11:25 G. Moras, L. Colombi Ciacchi, A. De Vita Growth of (100) hydrogen-induced platelets in silicon: a multiscale molecular dynamics study

11:25 – 11:50 M. Nastasi and Lin Shao Role of stress in H-induced cleavage in Si

11:50 – 12:15 R. M. Fleming, C. H. Seager, D. V. Lang, E. Bielejec, J. M. Campbell Defect-Driven Gain Bi-Stability in Neutron-Damaged, Silicon Bipolar Transistors

Parallel session: Grand Pavilion VI MO2: Defects in oxides - 1 chair: Danie Auret

10:25 – 10:50 Chris G. Van de Walle, Anderson Janotti, Abhishek Singh, and M. Scheffler Substitutional hydrogen donor in oxides

10:50 – 11:15 M. A. Reshchikov, H. Morkoç, B. Nemeth, J. Nause, J. Xie, B. Hertog, A. Osinsky Luminescence properties of defects in ZnO

11:15 – 11:40 M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, K. Thonke, R. Sauer Acceptor-related luminescence at 3.314eV confined to crystallographic line defects in ZnO

11:40 – 12:15 *M. McCluskey and S.J. Jokela Hydrogen-related local vibrational modes in ZnO

12:20 – 1:30 LUNCH (Enchantment ballroom)

Parallel session: Grand Pavilion VI-V MO3: Isotopes chair: Eugene Haller

1:30 – 2:05 * M. L.W. Thewalt, M. Steger, A. Yang, M. Cardona, H. Riemann, N.V. Abrosimov, M. F. Churbanov, A.V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, and H.-J. Pohl

Well Resolved Hyperfine Structure in the Absorption Spectrum of 77Se in Highly Enriched 28Si

2:05 – 2:30 A. Yang, M. Steger, M.L.W. Thewalt, M. Cardona, H. Riemann, N.V. Abrasimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, J.W. Ager III, and E.E. Haller High resolution photoluminescence of sulfur- and copper-related isoelectronic bound excitons in highly enriched 28Si

2:30 – 2:55 Y. Yoshida, Y. Kobayashi, K. Yukihira, K. Hayakawa, K. Suzuki, A. Yoshida, H. Ueno, A. Yoshimi, K. Shimada, D. Nagae, K. Asahi, and G. Langouche 57Fe diffusion in n-type Si after GeV- implantation of 57Mn

Parallel session: Grand Pavilion VI MO4: Defects in oxides - 2 chair: Matt McCluskey

1:30 – 1:55 Stephan Lany, Jorge Osorio-Guillen, Hannes Raebiger, and Alex Zunger Theory of real materials properties in oxides: non-stoichiometry, dopability, and carrier densities

1:55 – 2:20 E.V. Lavrov, F. Börrnert, and J. Weber Hydrogen kinetics in ZnO

2:20 – 2:55 *Kevin R. Martin, Chao Peng, Suppawan Kleekajai, Philip Blaney, Eric Diamond, W. Beall Fowler, Michael Stavola, and Roberto González

Hindered rotation of OD-Li in MgO: IR absorption experiments and theory

Tuesday July 24, 2007 Parallel session: Grand Pavilion VI-V TO1: Defects in SiC chair: Bruno Meyer

8:30 – 9:05 *N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. Janzén Prominent defects in semi-insulating SiC substrates

9:05 – 9:30 S. Nigam, S.W. Huh, A.Y. Polyakov, P.B. Klein, M.A. Capano, J.J. Sumakeris, and M. Skowronski Defects limiting carrier lifetimes in 4H-SiC epilayers

9:30 – 9:55 M.E. ZvanutNitrogen-related point defect in 4H and 6H SiC

Parallel session: Grand Pavilion VI TO2: Defects at interfaces chair: Pat Mooney

8:30 – 8:55 A. Stegner, R. N. Pereira, R. Lechner, R. Dietmüller, H. Wiggers, M. S. Brandt, and M. Stutzmann Phosphorus doping of Si nanocrystals: charge compensation and interface states

8:55 – 9:20 Audrius Alkauskas and Alfredo Pasquarello Alignment of H-related defects at Si-SiO2 interfaces: implications for stress-induced leakage current

9:20 – 9:55 *A. Stesmans and V. V. Afanas’ev Probing defect states at interfaces and interlayers of low dimensional Si/insulator structures through electron spin resonance

10:00 – 10:25 COFFEE BREAK (Pavilion court)

Parallel session: Grand Pavilion VI-V TO3: Defects in Ge and SiGe chair: Bob Jones

10:25 – 11:00 *J. Coutinho, C. Janke, A. Carvalho, S. Öberg, V. J. B. Torres, R. Jones, P. R. Briddon Strong compensation of n-type Ge via formation of donor-vacancy and multi-vacancy complexes

11:00 – 11:25 H. Bracht, S. Brotzmann, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller, and E. Simoen Diffusion and reaction of n-type dopants and carbon in germanium

11:25 – 11:50 V.P. Markevich, A.R. Peaker, I. Capan, S.B. Lastovskii, L. Dobaczewski, V.V. Emtsev, N.V. Abrosimov Electrically active defects induced by irradiation with electrons, neutrons and ions in Ge-rich SiGe alloys

11:50 – 12:15 P. Clauws, J. Van Gheluwe, J. Lauwaert, E. Simoen, J. Vanhellemont and A. Theuwis Deep level transient spectroscopy of transition metal impurities in germanium

Parallel session: Grand Pavilion VI TO4: Defects in III-V’s (except nitrides) chair:Joerg Weber

10:25 – 10:50 V. J. B. Torres, J. Coutinho, P. R. Briddon Ab-initio modeling of Carbon and Carbon-Hydrogen defects in InAs

10:50 – 11:15 B. Clerjaud, D. Wasik, R. Bouanani-Rahbi, G. Strzelecka, A. Hruban, M. Kaminska

Manganese hydrogen complex in GaP

11:15 – 11:40 Y. Ohnoa, T. Taishia, I. Yonenagaa, and S. Takeda Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional STM

11:40 – 12:15 * Y. Fujiwara, S.Takemoto, M.Suzuki, K.Shimada, K.Hidaka, Y.Terai, M.Tonouchi Ultrafast carrier-trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe transmission technique

12:20 – 1:30 LUNCH (Enchantment ballroom)

Parallel session: Grand Pavilion VI-V TO5: Defects in diamond chair: Filip Tuomisto

1:30 – 2:05 * M.-A. Pinault, J. Barjon, T. Kociniewski, F. Jomard, J. Chevallier N-type doping of diamond: present status and pending questions

2:05 – 2:30 J.-M. Mäki, F. Tuomisto, C. Kelly, D. Fisher, P. Martineau, D. Twitchen, and S. Woollard

Effects of high temperature annealing on optically active vacancy clusters in natural and CVD diamond

2:30 – 2:55 E. B. Lombardi, Alison Mainwood, and K. Osuch Lithium and Sodium in Diamond: A Comparison of Different DFT Models

Parallel session: Grand Pavilion VI TO6: Defects in organic semiconductors chair: Anna Cavallini

1:30 – 1:55 B. Fraboni, R. DiPietro, A. Cavallini, A. Fraleoni Morgera, L. Setti, I. Mencarelli, and C. Femoni Anisotropic transport properties of organic single crystals

1:55 – 2:20 Laura Zoppi, Arrigo Calzolari, Andrea Ferretti, Alice Ruini, and Marilia J. CaldasTheoretical Study of Hydrogen and Oxygen Impurities in PPV

2:20 – 2:55 * Byoungnam Park, Jodi Zwickey, Insik In, Peerasak Paoprasert, Padma Gopalan, and Paul G. EvansDefects and Charge Transfer in Monolayer-Scale Organic Field Effect Transistors

Wednesday July 25, 2007 Plenary session: Grand Pavilion IV-VI WPL: Microscopic studies of defects chair: Hans J. Queisser

8:30 – 9:15 Arne Nylandsted Larsen and Abdelmajid Mesli The hidden secrets of the E-center in Si and Ge

9:15 – 10:00 J. Weber, M. Hiller, and E.V. Lavrov Hydrogen molecules in semiconductors

10:00 – 10:25 COFFEE BREAK (Pavilion court)

Parallel session: Grand Pavilion VI-V WO1: Positrons and muons chair: Mike Stavola

10:25 – 11:00 *Filip Tuomisto Defect studies in electron irradiated ZnO and GaN

11:00 – 11:25 N. Yu. Arutyunova and V.V. Emtsev Atomic environment of e+ trapped by Group-V impurity-vacancy complexes in γ-irradiated Ge

11:25 – 11:50 P.J.C. King, R.L. Lichti, B.R. Carroll, Y.G. Celebi, K.H. Chow, I. Yonenaga Muonium defect statesand ionization energies in Sige alloys

11:50 – 12:15 A. I. Mansour, Z. Salman, P.J.C. King, B. Hitti, S.P. Cottrell, J. Jung, K.H. ChowStability, Diffusion and Reactivity of positively charged muonium in Si:B

Parallel session: Grand Pavilion VI WO2: New methods chair: Normand Modine

10:25 – 10:50 Ben HourahineQuantum hydrogens in silicon

10:50 – 11:15 D. West and S.B. Zhang Stochastically accelerated molecular dynamics

11:15 – 11:40 Igor Konovalov, Liudmila Makhova, Rüdiger Mitdank Defect spectroscopy with local excitation from core levels

11:40 – 12:15 *Jun-ichi Nishizawa, Tetsuo Sasaki, Yutaka Oyama and Tadao Tanabe Aspects of Point Defects in Coherent Terahertz-Wave Spectroscopy

12:15 – 6:30 EXCURSION

Thursday July 26, 2007 Parallel session: Grand Pavilion VI-V XO1: Defects in Si chair: Arne Larsen

8:30 – 9:05 *Martin S. BrandtPhosphorus in strained Si and Sige alloys

9:05 – 9:30 M. Hiller, E.V. Lavrov, and J. Weber A Raman scattering study of H2 trapped near O in Si

9:30 – 9:55 M. Sanati and S.K. Estreicher First-principles study of interstitial Fe, substitutional Fe, and Fe pairs in Si

Parallel session: Grand Pavilion VI XO2: Magnetic impurities chair: Andrzej Wysmolek

8:30 – 8:55 A. Debernardi and M. Fanciulli The magnetic interaction of Fe doped ZnO with intrinsic defects: a first principles study

8:55 – 9:20 R. Farshchi, D.J. Hwang, P.D. Ashby, K.M. Yu, C.P. Grigoropoulos, and O.D. Dubon Laser Patterning of Hydrogenated Ga1-xMnxAs

9:20 – 9:55 * Oleg Makarovsky Probing the electron eigenstates and the chemical potential in GaMnAs/GaAs heterostructures by magnetotunneling and photocurrent spectroscopy

10:00 – 10:25 COFFEE BREAK (Pavilion court)

Parallel session: Grand Pavilion VI-V XO3: Defects in III-nitrides chair: Alan Wright

10:25 – 11:00 * M. J. Kappers, R. A. Oliver, M. A. Moram, C. J. HumphreysNovel methods for reducing the dislocation density in gallium nitride

11:00 – 11:25 G. Pozina, B. Monemar, P.P Paskov, C. Hemmingsson, L. Hultman, H. Amano, I Akasaki, A.Usui Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

11:25 – 11:50 I. A. Buyanova, W. M. Chen, S. J. Pearton, C. Bihler, M. S. Brandt, Y. G. Hong, and C. W. Tu Efficiency of hydrogen passivation of nitrogen in GaAsN and GaNP alloys

11:50 – 12:15 S. Kleekajai, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, K. Washer, M. Capizzi,A. Polimeni, H. P. Xin,C. W. Tu, G. Bais, F. Martelli, and S. Rubini Vibrational spectroscopy of the N-H2 complex in dilute III-N-V alloys

Parallel session: Grand Pavilion VI XO4: Spintronics chair: Maria Kaminska

10:25 – 10:50 T. Itahashi, H. Hayashi, K.M. Itoh, L.S. Vlasenko, M.P. Vlasenko, D.S. Poloskin and R.Laiho Dynamic and optical nuclear polarization of 29Si nuclei via the photoexcited triplet states of radiation defects in isotopically controlled silicon

10:50 – 11:15 A.I.Veinger and A.G.ZabrodskiiAntiferromagnetic spin glass formation in the doped semiconductor near the insulator-metal transition

11:15 – 11:40 Peter R. Stone, Jeffrey W. Beeman, Kin M. Yu, and Oscar D. Dubon Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

11:40 – 12:15 * A. Wysmolek, R. Stępniewski, and M. Potemski Magneto-spectroscopy of donor-bound excitons in GaN

12:20 – 1:30 LUNCH (Enchantment ballroom)

Parallel session: Grand Pavilion VI-V XO5: Defects in irradiated Si chair: Brian Bech Nielsen

1:30 – 2:05 * Terutaka Goto, Hiroshi Yamada-Kaneta, Koji Sato, Masatoshi Hikin, Yuichi Nemoto, and Shintaro Nakamura Observation of vacancy in crystalline silicon using low-temperature ultrasonic measurements

2:05 – 2:30 K. Hayama, K. Takakura, H. Ohyama, E. Simoen , A. Mercha and C. Claeys Dose rate dependence of radiation-induced lattice defect and property degradation in npn Si bipolar transistors by 2-MeV electron irradiation

2:30 – 2:55 S. M. Myers, W. R. Wampler, P. J. Cooper, and D. B. King Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devices

Parallel session: Grand Pavilion VI XO6: Defects in nanostructures chair: Zuzanna Liliental-Weber

1:30 – 1:55 N. Fukata, S. Matsushita, N. Okada, T. Tsurui, J. Chen, T. Sekiguchi, N. Uchida, and K. Murakami H passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

1:55 – 2:20 A. Stegner, R. N. Pereira, R. Lechner, R. Dietmüller, H. Wiggers, M. S. Brandt, and M. Stutzmann Carrier transport through Si nanocrystal films: Spin-dependent conductivity studies

2:20 – 2:55 * James R. ChelikowskyNew Algorithms for Predicting the Properties of Doped Nanostructures

Friday July 27, 2007 Plenary session: Grand Pavilion IV-VI FPL: Interfaces and nanostructures chair: Alan F. Wright

8:30 – 9:15 Masashi UematsuDefect studies for the development of nano-scale silicon diffusion simulators

9:15 – 10:00 S.C. Erwin, L. Zu, M.I. Haftel, Al.L. Efros, T.A. Kennedy, and D.J. Norris New perspectives on doping semiconductor nanostructures

10:00 – 10:25 COFFEE BREAK (Pavilion court)

Parallel session: Grand Pavilion VI-V FO1: Microscopy chair: Kohei Itoh

10:25 – 11:00 *T.P. Bartel, P. Specht, C. Kisielowski From Extended Defects and Interfaces to Point Defects in 3D

11:00 – 11:25 Z. Liliental-Weber, R.E. Jones, H.C.M. van Genuchten, K.M. Yu, W. Walukiewicz, J.W. Ager III, E.E. Haller, H. Lu and W.J. Schaff

TEM studies of as-grown, irradiated and annealed InN films

11:25 – 11:50 P. Pongratz, G. Otto, G. Hobler, L. Palmetshofer Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations of Collision Cascades in Silicon

Parallel session: Grand Pavilion VI FO2: Photovoltaics chair: Eicke Weber

10:25 – 10:50 A. Cavallini, D. Cavalcoli, M. Rossi, A. Tomasi, S. Pizzini, D. Chrastina and G. Isella Defect analysis of hydrogenated nanocrystalline Si thin films

10:50 – 11:15 Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangBistability-mediated carrier recombination at light-induced boron-oxygen complexes in silicon

11:15 – 11:50 * Yanfa Yan, C.S. Jiang, X. Wu, R. Noufi, and M.M. Al-Jassim Towards the understanding of grain boundary physics in polycrystalline photovoltaic materials

11:55 – 12:15 CLOSING SESSION: Grand Pavilion VI-V

SUMMARY: POSTER SESSIONS

Monday, Tuesday, and Thursday, 3:00 – 6:00, Grand Pavilion I-III and Foyer The Corbett Award finalists (CA-1 through CA-4) are interviewed by the Jury during the Monday session, but their posters remain on display throughout the conference. CA-1: Fedwa El-Mellouhi and Normand Mousseau Ab-initio simulations of self-diffusion mechanisms in semiconductors

CA-2: Y. Shimizu, A. Takano, M. Uematsu, and K. M. Itoh Simultaneous observation of the behavior of impurities and silicon atoms in Si isotope superlattices

CA-3: A. Carvalho, R. Jones, J. Goss, C. Janke, J. Coutinho, S. Oberg and P.R. Briddon Self-interstitials and Frenkel pairs in electron-irradiated germanium

CA-4: Gianluca Savinia, Malcolm I Heggiea, Sven Öberg

Anomaly Enhancement of the Dislocation velocity in SiC

MPo: Monday July 23, 2007 1. Investigation of deep level defects in copper irradiated bipolar junction transistor K.V. Madhu, Ravi Kumar, M. Ravindra and R. Damle 2. Performance degradation mechanism of irradiated GaAlAs LED H. Ohyama, K. Takakura, H. Shitogiden, S. Kuboyama, E. Simoen and C. Claeys 3. Effect of gate interface on performance degradation of irradiated SiC-MESFET H. Ohyama, K. Takakura, M. Yoneoka, K. Uemura, M. Arai, S. Kuboyama, E. Simoen, C. Claeys 4. The Impact of Surface Morphology on C- and Si-Face 4H-SiC Schottky Barrier Diodes Kung-Yen Lee, Wenzhou Chen, Michael A. Capano 5. Cobalt clusters in Cu2O: Magnetic interaction without partially filled levels, independent of charge carriers Hannes Raebiger, Stephan Lany, and Alex Zunger 6. Correlationship of the electrical, optical and structural properties of P-doped ZnO films grown by magnetron sputtering Cheol Hyoun Ahn, Young Yi Kim, Si Woo Kang, Bo Hyun Kong, and Hyung Koun Cho 7. Anomalous shifts of blue and yellow luminescence bands in MBE-grown ZnO films M. A. Reshchikov, Avrutin, N. Izyumskaya, R. Shimada, and H. Morkoç 8. Structural and optical characterization of ternary MgxZn1-xO films grown on GaN by co-sputtering Si Woo Kang, Young Yi Kim, Cheol Hyoun Ahn, Bo Hyun Kong, and Hyung Koun Cho 9. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy Y. Ohno, R. Hirai, S. Ichikawa, T. Taishi, I. Yonenaga, and S. Takeda

10. Negative and positive magnetoresistance behaviors at very low temperatures in the variable range hopping regime in insulating CdSe and localized magnetic moments A. El kaaouachi, K. Bourma, R. Abdia, A. Nafidi, and G. Biskupski 11. Electron statistics and cluster formation in CdF2 semiconductors with DX-centers S.A.Kazanskii, A.S.Shcheulin, A.I.Ryskin, D.Hilger, and W.W.Warren, Jr. 12. Thermodynamic properties of defects in CdTe as derived by diffusion experiments F. Wagner, H. Wolf, J. Kronenberg, Th. Wichert and ISOLDE Collaboration 13. Electrical and Optical Properties of In-doped CdTe Thin Films P.K.Shishodia, Gayatri Shishodia, and R.M.Mehra 14. Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman method T.Taishi, T. Hayashi, N. Bamba, Y.Ohno, I.Yonenaga and K. Hoshikawa 15. Optical, electrical and X-ray-structural studies on Verneuil-grown SrTiO3 single crystals Shosuke Mochizuki, Fumito Fujishiro, Kohei Shibata, Aya Ogi, Takayuki Konya 16. Interaction of Oxygen Vacancy with He and H2 molecule in ZnO Yong-Sung Kim 17. Electrical characterization of defects in ZnO grown by pulsed-laser deposition F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, H. von Wenckstern, H. Schmidt, H. Frenzel, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann 18. The structure of charge compensated Fe3+ centres in ZnO studied by EPR D. V. Azamat, M. Fanciulli 18. Donor codoping of Co-doped TiO2 magnetic semiconductor: an ab initio study F. Filippone, A. Amore Bonapasta, G. Mattioli

20. High temperature Mössbauer Spectroscopy of Magnetic Defects in ZnO H. P. Gunnlaugsson, G. Weyer, R. Mantovan, D. Naidoo, R. Sielemann, K. Bharuth-Ram, M. Fanciulli, K. Johnston, S. Olafsson, G. Langouche 21. Electrical and Optical Properties of ZnO(P) and ZnMgO(P) Films Grown by Pulsed Laser Deposition A.I. Belogorokhov, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, A.V. Markov, H.S. Kim, D.P. Norton, J.S. Wright and S.J. Pearton 22. Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metalorganic chemical vapor deposition Dong Chan Kim, Won Suk Han, Bo Hyun Kong, Hyung Koun Cho, Jeong Yong Lee, Dong Jun Park 23. Fabrication of ZnO Films by PLD Method with Bias Voltage Hiroyuki Yamaguchi, Minoru Yamada, Takao Komiyama, Kotaro Sato and Takashi Aoyama

24. Photoelectrical properties of undoped and nitrogen doped ZnO layers grown by MOVPE on GaN/sapphire templates H.Witte, S.Tiefenau, A.Krtschil, S.Heinze, A.Dadgar, A.Krost 25. Magnetic resonance studies of defects in electron-irradiated ZnO substrates N. T. Son, I. G. Ivanov, A. Yu. Kuznetsov, B. G. Svensson, Q.X. Zhao, M. Willander, M. N. Morishita, T. Ohshima, H. Itoh, J. Isoya, E. Janzén and R. Yakimova 26. Impurities and dopants in commercially-available and CVT-grown ZnO S.J. Jokela and M.D. McCluskey 27. Shallow Nitrogen Acceptor in TiO2 Studied by β-NMR Spectroscopy M. Mihara, R. Matsumiya, K. Shimomura, K. Matsuta, M. Fukuda, D. Ishikawa, J. Komurasaki, D. Nishimura, T. Nagasawa, T. Izumikawa, and T. Minamisono 28. Temperature dependence of localized deep-level emissions in BeZnO layers grown by hybrid beam method T. S. Jeong, J. H. Kim, S. J. Bae, M. S. Han, and C. J. Youn 29. Photo-induced defects of metal oxides Shosuke Mochizuki, Fumito Fujishiro, Iino Akihiro, Kohei Shibata and Hiroshi Yamamoto 30. Structural and Optical Characterization of ZnO Thin Films P.K.Shishodia, Gayatri Shishodia, H.J.Kim, Akira Yoshida, and R.M.Mehra 31. Optical and structural properties of ZnO thin films grown on various substrates by metalorganic chemical vapor deposition Bo Hyun Kong, Dong Chan Kim, Hyung Koun Cho 32. Selective local impurity incorporation in high-quality ZnO epilayers F. Bertram, J. Christen, N. Oleynik, A. Dadgar, and A. Krost 33. Growth and investigate of ZnO layers obtained by RBQE L. Trapaidze, T. Butkhuzi, M. Sharvashidze, E. Kekelidze, N. Gaphishvili, G. Natsvlishvili, L. Aptsiauri 34. 35. Characterization of donor states in ZnO D. Seghier and H.P. Gislason 36. Epitaxial growth of high-temperature ZnO layers on sapphire substrate by magnetron sputtering Young Yi Kim, Si Woo Kang, Cheol Hyoun Ahn, Bo Hyun Kong, and Hyung Koun Cho 37. Optically detected magnetic resonance studies of intrinsic defects in ZnO epilayers grown by molecular-beam epitaxy X. J. Wang, I. A. Buyanova, W. M. Chen, C. J. Pan, and C. W. Tu

38. Theoretical and experimental studies on oxygen vacancy in p-type ZnO Zhi Gen Yu, Ping Wu, Hao Gong

39. Fabrication of Sb-doped p-type ZnO by PLD Method Hiroyuki Yamaguchi, Minoru Yamada, Takao Komiyama, Kotaro Sato and Takashi Aoyama 40. Si-related defects in InGaP/GaAs heterojunction bipolar transistors Hisashi Yamada, Noboru Fukuhara and Masahiko Hata 41. Anomalous photocurrent observed in a Fe/Zn0.96Fe0.04S Schottky diode B.K. Li, C. Wang, I.K. Sou, W.K. Ge, and J.N. Wang 42. Mechanism of Radiation-enhanced Superdiffusion at Room Temperature Takao Wada and Hiroshi Fujimoto 43. Athermal Annealing of Residual Defects in GaAs by Radiation-Enhanced Superdiffusion Takao Wada and Hiroshi Fujimoto 44. Valence control and metallization of boron by electronic doping H. Dekura, K. Shirai, and H. Katayama-Yoshida 45. Electronic Transport in Semiconductors with Extended Defects and High Magnetic Fields Alejandro Mayorga and Chumin Wang 46. Mobility gap and defect states in amorphous silica from first principles: many-body contributions L. Martin-Samos, G. Bussi, A. Ruini, M. Caldas, E. Molinari 47. Rattling “Guest” Impurities in Si and Ge Clathrate Semiconductors harles W. Myles, Koushik Biswas, and Emmanuel Nenghabi 48. Plastic strain field caused by dislocations Grzegorz Maciejewski 49. Diffusion and Trapping of Positively-Charged Muonium in Indium Arsenide R.L. Lichti, J.E. Vernon, B.R. Carroll, P.J.C. King, and S.F.J. Cox 50. Charge-State Transitions of Muonium in 6H Silicon Carbide H.N. Bani-Salameh, A.G. Meyer, B.R. Carroll, R.L. Lichti, Y.G. Celebi, K.H. Chow, P.J.C. King, and S.F.J. Cox 51. Photo-induced processes and their effects on the muonium precession signals in Si I. Fan, K.H. Chow, B. Hitti, B.E. Schultz, R. Scheuermann, W.A. MacFarlane, J. Jung, R.L. Lichti 52. Hydrogen plasma induced defects in germanium investigated by slow positron beam analysis J. De Baerdemaeker, J. Lauwaert, C. Dauwe and P. Clauws

53. Development of the 8Li cross-relaxation technique: applications for defects in semiconductors and other condensed matter systems A. I. Mansour, K.H. Chow, J. Jung, I. Fan, G.D. Morris, W.A. MacFarlane, R.F. Kiefl(, Z. Salman, T.J. Parolin, H. Saadaoui, D. Wang, M. D. Hossain, Q. Song, M. Smadella, O. Mosendz, B. Kardasz, and B. Heinrich 54. Application of DLTS and Laplace-DLTS to Defect Characterization in High Resistivity Semiconductors L.F. Makarenko and J. H. Evans-Freeman 55. Effect of the band-gap problem of density functional theory on calculated defect energy levels Audrius Alkauskas and Alfredo Pasquarello 56. Supercell-size dependences in density-functional-theory results for defects in silicon A. F. Wright, N. A. Modine, and R. R. Wixom 57. Probing defect dynamics in semiconductors: an on-the-fly kinetic Monte-Carlo algorithm with the activation-relaxation technique Fedwa El-Mellouhi, Michel Côté, Laurent J. Lewis and Normand Mousseau 58. Density functional theory and defect levels in semiconductors Peter A. Schultz 59. Surface effects in semiconductor interstitial formation energies Ann E. Mattsson, Ryan Wixom, and Rickard Armiento 60. Quantitative Modeling of Self-Interstitial Diffusion in Silicon N. A. Modine 61. “Learn On The Fly”: a multi-scale hybrid atomistic simulation method for material systems G. Moras, J. R. Kermode, T. Albaret, G. Csanyi, M. C. Payne, and A. De Vita 62. Characterization of high dose implanted SiC layers by analytical electron microscopy A.A. Suvorova and A.V. Suvorov 63. Title Author TPo: Tuesday July 24, 2007 1. First-principles theoretical study of the surface-molecule interaction in a metal oxide-phtalocyanine system G. Mattioli, F. Filippone, A. Amore Bonapasta 2. Dislocation structures in tetragonal hen egg-white lysozyme crystals using synchrotron white-beam X-ray topography H. Koizumi, M. Tachibana, K. Kojima, I. Yonenaga

3. Carbon-Related Point Defects at the 4H(0001)-SiC/SiO2 Interface Fabien Devynck and Alfredo Pasquarello 4. Role of defects on direct electron tunneling through ultra-thin SiO2 layers Joongoo Kang, Junhyeok Bang, Yong-Hoon Kim, and K. J. Chang

5. Interface states in thermally oxidized and nitrided SiO2/4H-SiC X.D. Chen, S. Dhar, T. Isaacs-Smith, J.R. Williams, L.C. Feldman, and P.M. Mooney 6. The Apparent Effect of Sample Surface Damage on the Dielectric Parameters of GaAs J.A.A. Engelbrecht, N.G. Hashe, K.T. Hillie and C. H. Claassens 7. Electronic properties of twin boundaries in AlGaAs Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, K. Shoda and S. Takeda 8. Thermal annealing study of as-grown n-type MOCVD GaAs Nazir A. Naz, Umar S. Qurashi and M. Zafar Iqbal 9. Influence of boron on the point defect equilibrium in highly n-doped GaAs single crystals U. Kretzer, F. Börner, T. Bünger, S. Eichler

10. Doubly-charged state of EL2 defect in MOCVD grown GaAs Nazir A. Naz, Umar S. Qurashi, Abdul Majid and M. Zafar Iqbal 11. Deep levels in alpha-irradiated p-type MOCVD GaAs Nazir A. Naz, Umar S. Qurashi and M. Zafar Iqbal 12. Defect reactions in gallium antimonide studied by zinc diffusion Hartmut Bracht and Kirsten Sunder 13. Electrical and structural characterization of Fe implanted GaInP B. Fraboni, T. Cesca, A. Gasparotto, G. Mattei, F. Boscherini, G.Impellizzeri, F.Priolo, M. Longo, L. Tarricone

14. Origin of n-type conduction in carbon doped InAs S. Najmi, M.X. Chen, M.L.W. Thewalt, S.P. Watkins 15. Effect of growth conditions on grown-in defects in Ga(In)NP alloys D. Dagnelund, X.J. Wang, I. P. Vorona, I. A. Buyanova, W. M. Chen, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu 16. Anisotropic Spatial Structure of Acceptor States in III-V Cubic Semiconductors C. Çelebi, P. M. Koenraad, A. Yu. Silov, J. -M. Tang, M. E. Flatté, and A. M. Monakhov 17. 8Li in GaAs studied with β-NMR T. Dunlop, A.I. Mansour, Z. Salman , K.H. Chow, I. Fan, R.F. Kiefl, S.R. Kreitzman, C.D.P. Levy, R.C. Ma, W.A. MacFarlane, G.D. Morris, and T.J. Parolin

18. Defect states of p-type InMnP:Zn implanted with Mn ion J. S. Kim, Y.-I. Lee, L. Ha, E. K. Kim, Y. Shon, S. J. Lee, and T.W. Kang 19. Ni-related complexes centers involving dopants in diamond R. Larico, W.V.M. Machado , J.F. Justo and L.V.C. Assali 20. Cobalt-nitrogen-related centers in diamond R. Larico, J. F. Justo, W. V. M. Machado, and L. V. C. Assali 21. Deep Defect States in Narrow Band-gap Semiconductors S. D. Mahanti, Khang Hoang, and Salameh Ahmad 22. Elimination of the Z1/2 defect in 4H-SiC epilayers by carbon implantation/annealing process Liutauras Storasta and Hidekazu Tsuchida 23. Behavior of Defects in Semi-Insulating 4H-SiC after Ultra-High Temperature Anneal Treatments N.Y. Garces, E.R. Glaser, W.E. Carlos, and M.A. Fanton

24. Investigation of Electrically Active Defects of Silicon Carbide using Atomistic Scale Modeling and Simulation Aveek Chatterjee, Asha Bhat and Kevin Matocha 25. Magneto- and piezo-luminescence studies of silicon vacancy in 6H-SiC K. Wardak, A. Wysmolek, R. Stępniewski, J. M. Baranowski, M. Potemski, W. Hofman, E. Tymicki, and K. Grasza 26. Misfit strain control at seed/crystal interface for hetero-seeding crystal growth I. Yonenaga, T. Taishi, Y. Ohno 27. Identification of stable and metastable forms of VO2 centers in germanium A. Carvalho, V.J.B. Torres, J. Coutinho, V.V. Litvinov, V.P. Markevich, A.R. Peaker, R. Jones and P.R. Briddon

28. Electrical characterization of ion implanted Ge P.J. Janse van Rensburg, F.D. Auret, S. Decoster, A. Vantomme

29. Retardation of boron diffusion in SiGe alloy Junhyeok Bang, Hanchul Kim, Joongoo Kang, Woo-Jin Lee, and K. J. Chang

30. Proton- and alpha-particle irradiation-induced defects in p-type germanium Vl. Kolkovsky, M. Christian Petersen, A. Mesli, and A. Nylandsted Larsen

31. Structural and electrical defects in Ge after ion implantation S. Decoster, F. D. Auret, P. J. Janse van Rensburg and A. Vantomme

32. Interstitial carbon related defects in Si1-xGex alloys L.I.Khirunenko, Yu.V.Pomozov, M.G.Sosnin, A.Duvanskii, V. J. B. Torres, J. Coutinho, R. Jones, P. R. Briddon, N.V.Abrosimov, H.Riemann

33. Ab initio calculation of formation and migration energies of charged intrinsic point defects in germanium P. Śpiewak, K. Sueoka, J. Vanhellemont, K.J. Kurzydłowski, K. Młynarczyk, P. Wabiński, I. Romandic

34. Influence of Ge on the acceptor level(s) of the E center in SiGe K. Kuitunen, J. Slotte, and F. Tuomisto 35. Electrical passivation by hydrogen of substitutional cobalt in monocrystaline germanium J.Lauwaert, J. Van Gheluwe and P. Clauws 36. Radiotracer Study of Cobalt Diffusion and Solubility in Electronic-Grade Germanium Wafers Ludmila Lerner and Nicolaas Stolwijk 37. Acceptor formation in SiGe/p-Si episystem by remote-hydrogen plasma treatment Y. Yamashita, Y. Sakamoto, Y. Kamiura, and T. Ishiyama 38. Carrier lifetime dependence on doping and excitation density in Ge and Si Eugenijus Gaubas and Jan Vanhellemont 39. Quantitative analysis of complexes in electron irradiated CZ silicon by IR N. Inoue, H. Ohyama, Y. Goto, T. Sugiyama 40. Recombination activity of nickel in nitrogen-doped Czochralski silicon Weiyan Wang, Deren Yang, Duanlin Que 41. Distribution of Electrically Active Nickel Atoms in Silicon Crystals Measured by Means of Deep Level Transient Spectroscopy Shuji Tanaka and Hajime Kitagawa 42. Influence of seed/crystal interface shape on dislocation generation due to thermal shock in Czochralski Si crystal growth T.Taishi, Y.Ohno, I.Yonenaga and K. Hoshikawa 43. Iron impurities in multicrystalline silicon studied by Mössbauer spectroscopy Y. Yoshida, S. Aoki, K. Sakata, Y. Suzuki, M. Adachi, and K. Suzuki. 44. Single Vacancies in Slowly Cooled Silicon Crystals M. Suezawa and I. Yonenaga 45. A fine structure of IR absorption spectrum of bistable donors in hydrogen-implanted silicon Kh.A. Abdullin, A.T. Issova, S.Zh. Tokmoldin 46. An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification G. Kissinger, A. Sattler, T. Müller, W. von Ammon

47. Chemical composition of nitrogen-oxygen shallow donor complexes in silicon H. Ch. Alt, H. E. Wagner, W. v. Ammon, F. Bittersberger and A. Huber

48. Defect-related photoluminescence in indium-implanted silicon Koichi Terashima and Mitsuhiro Horikawa 49. Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition C. Nyamhere, A. Chawanda, A. G. Das, F. D Auret, M. Hayes

50. Vacancies in CZ silicon crystals observed by low-temperature ultrasonic measurements Hiroshi Yamada-Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masatoshi Hikin, Yasuhiro Saito, and Shintaro Nakamura 51. The stability and diffusion of small arsenic interstitial complexes in crystalline silicon: first-principle studies Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Larry Larson, and Sanjay K. Banerjee 52. Influence of High-Magnetic-Field on Dislocation-Oxygen Interaction in Silicon I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno 53. Diffusion of TM impurities in silicon K. Matsukawa, K. Shirai, H. Yamaguchi, and H. Katayama-Yoshida 54. Effects of annealing on the electrical properties of highly resistive float zone p-type silicon V. Vankova and A.I. Kingon 55. Theoretical study on nitrogen-related defects in silicon N. Fujita, R. Jones, S. Oberg, P.R. Briddon

56. Vacancy-related defects in silicon irradiated at 80 K Kh.A. Abdullin, Yu.V. Gorelkinskii, and B.N. Mukashev 57. Properties and identification of an oxygen-related radiation defect in silicon N. Yarykin and J. Weber 58. Investigation of Electrically Active Defects of Silicon Carbide using Atomistic Scale Modeling and Simulation Aveek Chatterjee, Asha Bhat and Kevin Matocha 59. Passivation of Hybrid-Orientation Direct Silicon Bonding Interfaces M.C. Wagener, M. Seacrist, M. Ries, and G.A. Rozgonyi 60. A study of electron induced defects in n-type germanium by deep level transient spectroscop C. Nyamhere, F. D Auret, A. G. Das, A. Chawanda 61. In-adlayers on InN surfaces T.D. Veal, P.D.C. King, P.H. Jefferson, L.F.J. Piper, C.F. McConville, H. Lu, W. J. Schaff, P.A. Anderson, S.M. Durbin, D. Muto, H. Naoi and Y. Nanishi

62. IR studies of oxygen-vacancy defects in electron irradiated Ge-doped Si C.A. Londos, A. Andrianakis, D. Aliprantis, H. Ohyama

XPo: Thursday July 26, 2007 1. Epitaxial Lateral Overgrowth of Off-basal GaN Thin-film Growth Orientations J.L. Hollander, M.J. Kappers, C. McAleese, C.J. Humphreys 2. Magneto-optical studies of iron impurity in HVPE GaN A. Niedźwiadek, A. Wysmolek D. Wasik, M. Potemski, J. Szczytko, M. Kamińska, A. Twardowski, B. Clerjaud, M.L. Sadowski, B. Pastuszka, B. Łucznik, and I. Grzegory 3. Magnetooptical studies of bulk GaN doped with gadolinium Z. Lipińska, A. Wysmolek, M. Pawłowski, M. Palczewska, M. Kamińska, A. Twardowski, M. Potemski, M. Boćkowski, and I. Grzegory

4. Visualization of defect reduction in high quality bulk-like GaN using spectrally resolved cathodoluminescence microscopy B. Bastek, F. Bertram, J. Christen, Ch. Hennig, E. Richter, M Weyers, and G. Tränkle

5. Investigations on 40 MeV Lithium ions irradiated Gallium Nitride epilayers V. Suresh Kumar, J. Kumar, D. Kanjilal, K. Asokan, M. Fontana

6. Impact of defects on the electrical and optical properties of AlGaN devicesitle D. Seghier and H.P. Gislason 7. p-type doping of InN and InGaN: the importance of surface electronic properties T.D. Veal, P.D.C. King, P.H. Jefferson, C.F. McConville, Hai Lu and W.J. Schaff

8. Oxygen defect clustering in AlN/GaN and in AlGaN Andrew Pineda, Arthur H. Edwards, Peter A. Schultz

9. Multiple-charged defects in GaN studied by photoluminescence M. A. Reshchikov 10. Characterization of interface fluctuations and excitonic resonance mechanisms in InGaN/AlGaN multiple quantum well heterostructures with graded AlGaN barrier Chia-Hui Fang, Jiunn-Chyi Lee, Ya-Fen Wu, Yeu-Jent Hu, Jen-Cheng Wang and Tzer-En Nee

11. Uneven silicon delta doping in GaN barrier of InGaN/GaN multiple quantum wells for light emitting diodes T. J. Chung, G. M. Wu, D. C. Kuo, T. Ru, Z. J. Cai, N. C. Chen,C. C. Ke, C. W. Hung, J. C. Wang and T. E. Nee 12. Investigation of defect structures in InGaN/GaN multiple quantum wells grown on Si(111) substrate by metalorganic vapor phase epitaxy G. M. Wu*, Y. L. Kao, Z. J. Cai and T. Ru 13. Luminescence characterization of stacking faults and defect in a-plane GaN F. Bertram, B. Bastek, J. Christen, M. Noltemeyer, T. Hempel, A. Franke, M. Wieneke, A. Dadgar, and A. Krost

14. Cathodoluminescence of point defects in high quality AlN MOVPE epilayers Barbara Bastek, Juergen Christen, Frank Bertram, Thomas Hempel, Armin Dadgar, and Alois Krost

15. Different quenching behavior of deep defects in undoped GaN layers H.Witte, A.Krtschil, C.Baer, A.Dadgar, and A. Krost 16. Deep electronic states associated with a meta-stable hole trap in n-type GaN D Emiroglu, J H Evans-Freeman, M J Kappers, C McAleese, C J Humphreys

17. Electrical and Recombination Non-uniformities in Selectively Re-Grown GaN Films and Neutron Radiation Effects A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.B. Yakimov, P.S. Vergeles, I-H. Lee, L.F.Voss,S.J. Pearton, N.G. Kolin, D.I. Merkurisov, V.M. Boiko 18. Radiation-produced defects in n-GaN V.V. Emtsev, V.Yu. Davydov, V.V. Kozlovskii, G.A. Oganesyan, D.S. Poloskin, A.N. Smirnov

19. Stability of the cubic phase in GaN doped with 3d-transition metal ions Eun-Ae Choi and K. J. Chang 20. Identification of the local vibrational modes of small nitrogen clusters in dilute GaAsN A. Carvalho, R. Jones, S. J. Barker, R. S. Williams, M. J. Ashwin, R. C. Newman, P. N. Stavrinou, T. S. Jones, G. Parry, S. Öberg and P. R. Briddon

21. Recombination dynamics of free and bound excitons in bulk GaN B. Monemar, P.P. Paskov, J.P. Bergman, G. Pozina, A.A .Toropov, T.V. Shubina, and A. Usui 22. Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy E.R. Glaser, M. Murthy, J.A. Freitas, Jr., and D.F. Storm

23. Compensating defects in Si-doped AlN bulk crystals K. Irmscher, T. Schulz, M. Albrecht, C. Hartmann, J. Wollweber, and R. Fornari 24. Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment Y. Kamiura, M. Ogasawara, K. Fukutani, J. Tamura, T. Ishiyama, Y. Yamashita, T. Mitani and T. Mukai 25. Electrical properties of GaAsN film grown by chemical beam epitaxy K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, and M. Yamaguchi 26. Rare Earth Clustering and the Magnetic Moment of Gd Ben Hourahine, Iman Roqan, Simone Sanna, Patrick Briddon

27. Growth of embedded silicon nanocrystals Luciano Colombo and Alessandro Mattoni

28. Luminescent defect study in SiC nano-crystallites M. Morales Rodriges, A. Díaz Cano, T. V. Torchynska and S. Ostapenko 29. Deep-level transient spectroscopy studies of Wannier-Stark effect in Ge/Si quantum dot superlattices M.M.Sobolev , G.E. Cirlin and A. A. Tonkikh 30. Stress relaxation in buried quantum dots V.V. Chaldyshev, N.A. Bert, A.L. Kolesnikova, A.E. Romanov

31. Effect of electric and magnetic fields on the binding energy of the Coulomb impurity bound polaron in quantum dot Arshak L Vartanian, Lyudvig A Vardanyan, Eduard M Kazaryan 32. Molecular dynamics simulations of the diffusion process of carbon vacancies in carbon nanotubes Tae Kyung Lee, Byungki Ryu, In-Ho Lee, and K. J. Chang

33. Electron- and hole-related electrical activity of InAs/GaAs quantum dots P. Kruszewski, L. Dobaczewski, V.P. Markevich, C. Mitchell, M. Missous, and A. R. Peaker 34. Microstructure of quantum dots ensembles by EXAFS spectroscopy S.B.Erenburg, N.V.Bausk, A.I.Nikiforov, A.V.Dvurechenskii, V.G.Mansurov, K.S.Zhuravlev, S.Nikitenko

35. Ge quantum dots: from amorphous to crystalline three-dimensional superlattices in glass silica matrix UU.V. Desnica, M. Buljan, I.D. Desnica-Frankovic, N. Radic, P. Dubcek, S. Bernstorff

36. Lithium Intercalation in Molybdenum Trioxide Nanoparticles Yong-Hyun Kim, Se-Hee Lee, A. C. Dillon, and S. B. Zhang 37. Correlation between electronic band structure and magneto-transport properties in HgTe/CdTe Superlattice A. El Abidi, A. Nafidi, A. El kaaouachi and H. Chaib 38. Deep levels in GaAs/Al0.78Ga0.22As heterostructures M. Naeem Khan, Umar S. Qurashi, Nasim Zafar, Nazir A. Naz, M. Zafar Iqbal, P. Krispin and R. Hey 39. Manifestation of an intrinsic interface state in electronic band Structure of HgTe/CdTe Superlattice A. El Abidi, A. Nafidi, A. El kaaouachi and H. Chaib 40. The structure and properties of vacancies in Si nano-crystals from real space pseudopotentials S. P. Beckman and James R. Chelikowsky 41. Diamond Spintronics: Ferromagnetic Ordering of Cobalt in Diamond E. B. Lombardi

42. Anisotropic band-edge absorption and magnetic circular dichroism is Europium chalcogenides M. A. Manfrini and A. B. Henriques 43. Electronic structure of 3d impurities and magnetism in bulk and films ZnS, ZnO, and GaAs semiconductors doped with Mn, Co, and Cr T. P. Surkova, V. R. Galakhov, E. Z. Kurmaev, and L. D. Finkelstein 44. Diffusion of substitutional Mn and evolution of ferromagnetism in (Ga,Mn)As Teemu Hynninen, Hannes Raebiger, Maria Ganchenkova, and Juhani von Boehm 45. First-principles Design of Half-Heusler type Dilute Magnetic Semiconductors T. Fukushima, K. Sato, H. Katayama-Yoshida and P. H. Dederichs 46. First-Principles Study and Monte Carlo Simulations for Curie Temperatures in CuAlO2 Based Dilute Magnetic Semiconductors Hidetoshi Kizaki, Kazunori Sato and Hiroshi Katayama-Yoshida 47. Self-organization and super-paramagnetism in dilute magnetic semiconductors K. Sato, T. Fukushima and H. Katayama-Yoshida 48. Dynamic Nuclear Polarization of 29Si Nuclei in Ps-Doped Isotopically Controlled Silicon H. Hayashi, T. Itahashi, K. M. Itoh, L. S. Vlasenko, and M. P. Vlasenko

49. Quantitative analysis of vacancy clusters induced by ion-beam processing I.D. Desnica-Frankovic, P. Dubcek, M. Buljan, V. Desnica, S Bernstorff, M.C. Ridgway and C.J. Glover

50. Control of impurity diffusion by IR excitations K. Shirai, H. Yamaguchi, and H. Katayama-Yoshida 51. Theoretical study of the {I,Ci,Oi} defect in silicon Daniel J. Backlund and Stefan K. Estreicher 52. Impurity Absorption Spectroscopy of the Deep Double Donor Sulfur in Isotopically Enriched Silicon M. Steger, A. Yang, M.L.W. Thewalt, M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.-J. Pohl, J.W. Ager III, and E.E. Haller

53. Fermi level dependence of Mössbauer spectroscopic components corresponding to iron interstitials and their clusters in silicon Y. Yoshida, K. Sakata, Y. Suzuki, K. Suzuki, 54. Minority carrier lifetime in as-grown germanium doped Czochralski silicon Xin Zhu, Deren Yang, Ming Li, Duanlin Que 55. Passivation and reactivation of carrier in B- and P-doped Si treated with atomic hydrogen N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, S. Hishita, and K. Murakami

56. Theoretical Study of Transition Metal Point Defects Trapped at Dislocations in Silicon N. Fujita, R. Jones, A.T. Blumenau, S. Oberg, P.R. Briddon

57. First principle investigations of iron-hydrogen interactions in silicon N. Gonzalez Szwacki and S. K. Estreicher 58. Effects of Clustering on the Properties of Defects in Irradiated Silicon C. H. Seager, R. M. Fleming, D. V. Lang, P. J. Cooper, E. Bielejec and J. M. Campbell 59. Localization of defects in InAs QD asymmetric InGaAs/GaAs DWELL structures J. L. Casas Espínola, T. V. Torchynska, G. Polupan, S. Ostapenko, A. Stintz and K. J. Malloy

60. Structure features of semiconductor nano-structures by Raman spectroscopy Shu-Lin Zhang 61. Title Author