trenchstoptm current rapid 1 anti parallel diode · datasheet please read the important notice and...

Datasheet Please�read�the�Important�Notice�and�Warnings�at�the�end�of�this�document V�2.1www.infineon.com 2018-01-11

IKB15N65EH5

High�speed�switching�series�5th�generation

TRENCHSTOPTM�5�high�speed�switching�IGBT�copacked�with�full�ratedcurrent�RAPID�1�anti�parallel�diode�Features�and�Benefits:

High�speed�H5�technology�offering•�Best-in-Class�efficiency�in�hard�switching�and�resonanttopologies•�650V�breakdown�voltage•�Low�QG•�IGBT�copacked�with�full�rated�current�RAPID�1�fast�antiparalleldiode•�Maximum�junction�temperature�175°C•�Pb-free�lead�plating;�RoHS�compliant•�Complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/igbt/

Potential�Applications:

•�Energy�Generation��-�Solar�String�Inverter��-�Solar�Micro�Inverter•�Industrial�Power�Supplies��-�Industrial�SMPS��-�Industrial�UPS•�Metal�Treatment��-�Welding•�Energy�Distribution��-�Energy�Storage•�Infrastructure�–�Charge��-�Charger

Product�Validation:

Qualified�for�industrial�applications�according�to�the�relevant�testsof�JEDEC47/20/22

G

C

E

G

E

C

Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIKB15N65EH5 650V 15A 1.65V 175°C K15EEH5 PG-TO263-3

Datasheet 2 V�2.12018-01-11

IKB15N65EH5


Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V�2.12018-01-11

IKB15N65EH5


Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.

Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 650 VDC�collector�current,�limited�by�TvjmaxTc�=�25°CTc�=�100°C

IC 30.018.0

A

Pulsed�collector�current,�tp�limited�by�Tvjmax ICpuls 45.0 ATurn off safe operating areaVCE�≤�650V,�Tvj�≤�175°C,�tp�=�1µs - 45.0 A

Diode�forward�current,�limited�by�TvjmaxTc�=�25°CTc�=�100°C

IF 32.021.0

A

Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 45.0 AGate-emitter voltageTransient�Gate-emitter�voltage�(tp�≤�10µs,�D�

Datasheet 4 V�2.12018-01-11

IKB15N65EH5


Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static�Characteristic

Collector-emitter breakdown voltage V(BR)CES VGE�=�0V,�IC�=�0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE�=�15.0V,�IC�=�15.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE�=�0V,�IF�=�15.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.451.421.39

1.70--

V

Gate-emitter threshold voltage VGE(th) IC�=�0.15mA,�VCE�=�VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE�=�650V,�VGE�=�0VTvj�=�25°CTvj�=�175°C

--

-1400

50-

µA

Gate-emitter leakage current IGES VCE�=�0V,�VGE�=�20V - - 100 nATransconductance gfs VCE�=�20V,�IC�=�15.0A - 22.0 - S

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.


Dynamic�Characteristic

Input capacitance Cies - 930 -Output capacitance Coes - 24 -Reverse transfer capacitance Cres - 4 -

VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF

Gate charge QG VCC�=�520V,�IC�=�15.0A,VGE�=�15V - 38.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 7.0 - nH

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 16 - nsRise time tr - 17 - nsTurn-off delay time td(off) - 145 - nsFall time tf - 22 - nsTurn-on energy Eon - 0.40 - mJTurn-off energy Eoff - 0.08 - mJTotal switching energy Ets - 0.48 - mJ

Tvj�=�25°C,VCC�=�400V,�IC�=�15.0A,VGE�=�0.0/15.0V,RG(on)�=�39.0Ω,�RG(off)�=�39.0Ω,Lσ�=�30nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V�2.12018-01-11

IKB15N65EH5


Turn-on delay time td(on) - 15 - nsRise time tr - 10 - nsTurn-off delay time td(off) - 145 - nsFall time tf - 27 - nsTurn-on energy Eon - 0.18 - mJTurn-off energy Eoff - 0.03 - mJTotal switching energy Ets - 0.21 - mJ


Diode�Characteristic,�at�Tvj�=�25°C

Diode reverse recovery time trr - 70 - nsDiode reverse recovery charge Qrr - 0.50 - µCDiode peak reverse recovery current Irrm - 10.0 - ADiode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -600 - A/µs

Tvj�=�25°C,VR�=�400V,IF�=�15.0A,diF/dt�=�600A/µs



Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�150°CTurn-on delay time td(on) - 16 - nsRise time tr - 18 - nsTurn-off delay time td(off) - 160 - nsFall time tf - 20 - nsTurn-on energy Eon - 0.53 - mJTurn-off energy Eoff - 0.10 - mJTotal switching energy Ets - 0.63 - mJ


Turn-on delay time td(on) - 14 - nsRise time tr - 10 - nsTurn-off delay time td(off) - 160 - nsFall time tf - 28 - nsTurn-on energy Eon - 0.27 - mJTurn-off energy Eoff - 0.04 - mJTotal switching energy Ets - 0.31 - mJ


Datasheet 6 V�2.12018-01-11

IKB15N65EH5


Diode�Characteristic,�at�Tvj�=�150°C





Datasheet 7 V�2.12018-01-11

IKB15N65EH5


Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�PO

WER

�DISSIPA

TION�[W

]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

110

Figure 2. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IC,�C

OLLEC

TOR�CURREN

T�[A]

25 50 75 100 125 150 1750

5

10

15

20

25

30

Figure 3. Typical�output�characteristic(Tvj=25°C)

VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

0 1 2 3 4 50

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

Figure 4. Typical�output�characteristic(Tvj=150°C)


IC,�C

OLLEC

TOR�CURREN

T�[A]

0 1 2 3 4 50

5

10

15

20

25

30

35

40

45

VGE=20V

18V

12V

10V

8V

7V

6V

5V

4V

Datasheet 8 V�2.12018-01-11

IKB15N65EH5


Figure 5. Typical�transfer�characteristic(VCE=20V)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50

5

10

15

20

25

30

35

40

45Tj=25°CTj=150°C

Figure 6. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)

Tvj,�JUNCTION�TEMPERATURE�[°C]

VCEs

at,�C

OLLEC

TOR-EMITTE

R�SAT

URAT

ION�[V

]

25 50 75 100 125 150 1750.75

1.00

1.25

1.50

1.75

2.00

2.25IC=3,8AIC=7,5AIC=15A

Figure 7. Typical�switching�times�as�a�function�ofcollector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�RG=39Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

t,�SW

ITCHING�TIMES

�[ns]

0 5 10 15 20 25 30 35 40 45 501

10

100

td(off)tftd(on)tr

Figure 8. Typical�switching�times�as�a�function�of�gateresistor(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�IC=15A,�Dynamic�test�circuit�inFigure E)

rG,�GATE�RESISTOR�[Ω]

t,�SW

ITCHING�TIMES

�[ns]

10 20 30 40 50 60 70 80 90 100 110 1201

10

100

1000td(off)tftd(on)tr

Datasheet 9 V�2.12018-01-11

IKB15N65EH5


Figure 9. Typical�switching�times�as�a�function�ofjunction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=15A,�rG=39Ω,�Dynamic�test�circuit�inFigure E)


t,�SW

ITCHING�TIMES

�[ns]

25 50 75 100 125 1501

10

100 td(off)tftd(on)tr

Figure 10. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.15mA)


VGE(th) ,�GAT

E-EM

ITTE

R�THRES

HOLD

�VOLT

AGE�[V]

0 25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0typ.

Figure 11. Typical�switching�energy�losses�as�afunction�of�collector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�RG=39Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

0 5 10 15 20 25 30 35 40 450.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50EoffEonEts

Figure 12. Typical�switching�energy�losses�as�afunction�of�gate�resistor(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�IC=15A,�Dynamic�test�circuit�inFigure E)

RG,�GATE�RESISTOR�[Ω]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

10 20 30 40 50 60 70 80 90 100 110 1200.0

0.2

0.4

0.6

0.8

1.0

1.2EoffEonEts

Datasheet 10 V�2.12018-01-11

IKB15N65EH5


Figure 13. Typical�switching�energy�losses�as�afunction�of�junction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=15A,�RG=39Ω,Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

25 50 75 100 125 1500.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7EoffEonEts

Figure 14. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(inductive�load,�Tvj=150°C,�VGE=15/0V,IC=15A,�rG=39Ω,�Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

200 250 300 350 400 450 5000.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8EoffEonEts

Figure 15. Typical�gate�charge(IC=15A)

QGE,�GATE�CHARGE�[nC]

VGE ,�GAT

E-EM

ITTE

R�VOLT

AGE�[V]

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

14

16130V520V

Figure 16. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)


C,�C

APAC

ITAN

CE�[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4CiesCoesCres

Datasheet 11 V�2.12018-01-11

IKB15N65EH5


Figure 17. IGBT�transient�thermal�impedance(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�IMPE

DAN

CE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0503534.7E-5

20.5774464.8E-4

30.6309793.4E-3

40.1211420.022142

50.0189320.19328

Figure 18. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�IMPE

DAN

CE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0674154.2E-5

20.7820384.8E-4

30.7885733.3E-3

40.1461260.022253

50.0228370.192244

Figure 19. Typical�reverse�recovery�time�as�a�functionof�diode�current�slope(VR=400V)

diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]

trr,�R

EVER

SE�REC

OVE

RY�TIME�[ns]

400 450 500 550 600 650 7000

15

30

45

60

75

90

105

120

135

150Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 20. Typical�reverse�recovery�charge�as�afunction�of�diode�current�slope(VR=400V)


Qrr ,�REV

ERSE

�REC

OVE

RY�CHAR

GE�[µC]

400 450 500 550 600 650 7000.0

0.2

0.4

0.6

0.8

1.0

1.2Tj=25°C, IF = 15ATj=150°C, IF = 15A

Datasheet 12 V�2.12018-01-11

IKB15N65EH5


Figure 21. Typical�peak�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)


Irrm,�R

EVER

SE�REC

OVE

RY�CURREN

T�[A]

400 450 500 550 600 650 7000.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 22. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)


dIrr /dt,�diode�peak�rate�of�fall�of�I

rr �[A/µs]

400 450 500 550 600 650 700-700

-650

-600

-550

-500

-450

-400

-350

-300Tj=25°C, IF = 15ATj=150°C, IF = 15A

Figure 23. Typical�diode�forward�current�as�a�functionof�forward�voltage

VF,�FORWARD�VOLTAGE�[V]

IF ,�FORWAR

D�CURREN

T�[A]

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.250

5

10

15

20

25

30

35

40

45Tj=25°CTj=150°C

Figure 24. Typical�diode�forward�voltage�as�a�functionof�junction�temperature


VF ,�FO

RWAR

D�VOLT

AGE�[V]

25 50 75 100 125 150 1750.75

1.00

1.25

1.50

1.75

2.00IF=7,5AIF=15AIF=30A

Datasheet 13 V�2.12018-01-11

IKB15N65EH5


01

30-08-2007

Z8B00003324

0.039

0.000

0.026

0.335

0.013

0.037

MIN

0.169

0.046

0.280

0.090

0.386

8.60 0.3390.256

0.575

0.632

0.366

0.177

0.421

0.049

0.144

5.08

2.54

1.00

7.10

2.29

9.80

6.50

9.30

4.50

14.61

16.05

10.70

1.25

3.65

0.70

2

0.00

0.65

0.33

8.51

0.95

4.30

MIN

1.17

1.60

1.78

7.90

10.31

3.00

15.88

16.25

9.50

4.70

10.90

1.45

3.85

MAX

4.57

0.25

1.15

0.65

9.45

0.85

1.40

0.200

0.100

0.028

2

0.063

0.070

0.311

0.406

0.118

0.625

0.640

0.374

0.185

0.429

0.057

0.152

0.010

0.180

0.033

0.026

0.372

0.045

MAX

0.055

0

7.5mm

55

0

Package Drawing PG-TO263-3

Datasheet 14 V�2.12018-01-11

IKB15N65EH5


t

a b

td(off)

tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V�2.12018-01-11

IKB15N65EH5


Revision�History

IKB15N65EH5

Revision:�2018-01-11,�Rev.�2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2018-01-11 Final data sheet

Trademarks

All�referenced�product�or�service�names�and�trademarks�are�the�property�of�their�respective�owners.��

Published�byInfineon�Technologies�AG81726�München,�Germany©�Infineon�Technologies�AG�2018.All�Rights�Reserved.

Important�NoticeThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics(“Beschaffenheitsgarantie”).�With�respect�to�any�examples,�hints�or�any�typical�values�stated�herein�and/or�anyinformation�regarding�the�application�of�the�product,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�andliabilities�of�any�kind,�including�without�limitation�warranties�of�non-infringement�of�intellectual�property�rights�of�any�thirdparty.

In�addition,�any�information�given�in�this�document�is�subject�to�customer’s�compliance�with�its�obligations�stated�in�thisdocument�and�any�applicable�legal�requirements,�norms�and�standards�concerning�customer’s�products�and�any�use�ofthe�product�of�Infineon�Technologies�in�customer’s�applications.

The�data�contained�in�this�document�is�exclusively�intended�for�technically�trained�staff.�It�is�the�responsibility�ofcustomer’s�technical�departments�to�evaluate�the�suitability�of�the�product�for�the�intended�application�and�thecompleteness�of�the�product�information�given�in�this�document�with�respect�to�such�application.

For�further�information�on�the�product,�technology,�delivery�terms�and�conditions�and�prices�please�contact�your�nearestInfineon�Technologies�office�(www.infineon.com).

Please�note�that�this�product�is�not�qualified�according�to�the�AEC�Q100�or�AEC�Q101�documents�of�the�AutomotiveElectronics�Council.

WarningsDue�to�technical�requirements�products�may�contain�dangerous�substances.�For�information�on�the�types�in�questionplease�contact�your�nearest�Infineon�Technologies�office.

Except�as�otherwise�explicitly�approved�by�Infineon�Technologies�in�a�written�document�signed�by�authorizedrepresentatives�of�Infineon�Technologies,�Infineon�Technologies’�products�may�not�be�used�in�any�applications�where�afailure�of�the�product�or�any�consequences�of�the�use�thereof�can�reasonably�be�expected�to�result�in�personal�injury.

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HeaddataTable of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

trenchstoptm current rapid 1 anti parallel diode · datasheet please read the important notice and...

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