trenchstoptm current rapid 1 fast and soft anti parallel diode · datasheet please read the...

Datasheet Please�read�the�Important�Notice�and�Warnings�at�the�end�of�this�document V�2.1www.infineon.com 2019-01-25

IKP28N65ES5

High�speed�switching�series�5�th�generation

TRENCHSTOPTM�5�high�speed�soft�switching�IGBT�copacked�with�full�ratedcurrent�RAPID�1�fast�and�soft�anti�parallel�diode�Features�and�Benefits:

High�speed�S5�technology�offering•�High�speed�smooth�switching�device�for�hard�&�soft�switching•�Very�Low�VCEsat•�650V�breakdown�voltage•�Low�QG•�IGBT�copacked�with�full�rated�current�RAPID�1�fast�antiparalleldiode•�Maximum�junction�temperature�175°C•�Pb-free�lead�plating;�RoHS�compliant•�Complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/igbt/

Potential�Applications:

•�Drives•�Industrial�Power�Supplies��-�Industrial�SMPS��-�Industrial�UPS•�Metal�Treatment��-�Welding•�Energy�Distribution��-�Energy�Storage•�Infrastructure�–�Charge��-�Charger

Product�Validation:

Qualified�for�industrial�applications�according�to�the�relevant�testsof�JEDEC47/20/22

G

C

E

GCE

C

Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIKP28N65ES5 650V 28A 1.5V 175°C K28EES5 PG-TO220-3

Datasheet 2 V�2.12019-01-25

IKP28N65ES5


Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V�2.12019-01-25

IKP28N65ES5


Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.

Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 650 VDC�collector�current,�limited�by�TvjmaxTc�=�25°CTc�=�100°C

IC 38.028.0

A

Pulsed�collector�current,�tp�limited�by�Tvjmax ICpuls 90.0 ATurn off safe operating areaVCE�≤�650V,�Tvj�≤�175°C,�tp�=�1µs - 90.0 A

Diode�forward�current,�limited�by�TvjmaxTc�=�25°C�value�limited�by�bondwireTc�=�100°C

IF 40.027.0

A

Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 90.0 AGate-emitter voltageTransient�Gate-emitter�voltage�(tp�≤�10µs,�D�

Datasheet 4 V�2.12019-01-25

IKP28N65ES5


Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static�Characteristic

Collector-emitter breakdown voltage V(BR)CES VGE�=�0V,�IC�=�0.20mA 650 - - V

Collector-emitter saturation voltage VCEsat

VGE�=�15.0V,�IC�=�28.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.501.721.85

1.90--

V

Diode forward voltage VF

VGE�=�0V,�IF�=�28.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C

---

1.591.601.56

1.95--

V

Gate-emitter threshold voltage VGE(th) IC�=�0.28mA,�VCE�=�VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE�=�650V,�VGE�=�0VTvj�=�25°CTvj�=�175°C

--

-1400

50-

µA

Gate-emitter leakage current IGES VCE�=�0V,�VGE�=�20V - - 100 nATransconductance gfs VCE�=�20V,�IC�=�28.0A - 29.0 - S

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.


Dynamic�Characteristic

Input capacitance Cies - 1200 -Output capacitance Coes - 38 -Reverse transfer capacitance Cres - 5 -

VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF

Gate charge QG VCC�=�520V,�IC�=�28.0A,VGE�=�15V - 50.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 7.0 - nH

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 27 - nsRise time tr - 28 - nsTurn-off delay time td(off) - 184 - nsFall time tf - 34 - nsTurn-on energy Eon - 0.53 - mJTurn-off energy Eoff - 0.40 - mJTotal switching energy Ets - 0.93 - mJ

Tvj�=�25°C,VCC�=�400V,�IC�=�28.0A,VGE�=�0.0/15.0V,RG(on)�=�34.0Ω,�RG(off)�=�34.0Ω,Lσ�=�30nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V�2.12019-01-25

IKP28N65ES5


Turn-on delay time td(on) - 25 - nsRise time tr - 16 - nsTurn-off delay time td(off) - 193 - nsFall time tf - 27 - nsTurn-on energy Eon - 0.25 - mJTurn-off energy Eoff - 0.15 - mJTotal switching energy Ets - 0.40 - mJ


Diode�Characteristic,�at�Tvj�=�25°C

Diode reverse recovery time trr - 73 - nsDiode reverse recovery charge Qrr - 0.60 - µCDiode peak reverse recovery current Irrm - 15.5 - ADiode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -324 - A/µs

Tvj�=�25°C,VR�=�400V,IF�=�28.0A,diF/dt�=�1020A/µs



Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�150°CTurn-on delay time td(on) - 26 - nsRise time tr - 28 - nsTurn-off delay time td(off) - 200 - nsFall time tf - 36 - nsTurn-on energy Eon - 0.65 - mJTurn-off energy Eoff - 0.50 - mJTotal switching energy Ets - 1.15 - mJ


Turn-on delay time td(on) - 25 - nsRise time tr - 16 - nsTurn-off delay time td(off) - 220 - nsFall time tf - 48 - nsTurn-on energy Eon - 0.35 - mJTurn-off energy Eoff - 0.25 - mJTotal switching energy Ets - 0.60 - mJ


Datasheet 6 V�2.12019-01-25

IKP28N65ES5


Diode�Characteristic,�at�Tvj�=�150°C





Datasheet 7 V�2.12019-01-25

IKP28N65ES5


Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�PO

WER

�DISSIPA

TION�[W

]

25 50 75 100 125 150 1750

20

40

60

80

100

120

140

Figure 2. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IC,�C

OLLEC

TOR�CURREN

T�[A]

25 50 75 100 125 150 1750

5

10

15

20

25

30

35

40

Figure 3. Typical�output�characteristic(Tvj=25°C)

VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80VGE = 20V

18V

15V

14V

12V

10V

8V

6V

4V

Figure 4. Typical�output�characteristic(Tvj=150°C)


IC,�C

OLLEC

TOR�CURREN

T�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80VGE = 20V

18V

15V

14V

12V

10V

8V

6V

4V

Datasheet 8 V�2.12019-01-25

IKP28N65ES5


Figure 5. Typical�transfer�characteristic(VCE=20V)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

3 4 5 6 7 8 90

10

20

30

40

50

60

70

80Tvj = 25°CTvj = 175°C

Figure 6. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)

Tvj,�JUNCTION�TEMPERATURE�[°C]

VCEs

at,�C

OLLEC

TOR-EMITTE

R�SAT

URAT

ION�[V

]

25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50IC = 7.5AIC = 14AIC = 28A

Figure 7. Typical�switching�times�as�a�function�ofcollector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�rG=34Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

t,�SW

ITCHING�TIMES

�[ns]

0 10 20 30 40 50 60 70 80 901

10

100

1000td(off)tftd(on)tr

Figure 8. Typical�switching�times�as�a�function�of�gateresistor(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�IC=28A,�Dynamic�test�circuit�inFigure E)

rG,�GATE�RESISTOR�[Ω]

t,�SW

ITCHING�TIMES

�[ns]

5 15 25 35 45 55 65 75 851

10

100


Datasheet 9 V�2.12019-01-25

IKP28N65ES5


Figure 9. Typical�switching�times�as�a�function�ofjunction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=28A,�rG=34Ω,�Dynamic�test�circuit�inFigure E)


t,�SW

ITCHING�TIMES

�[ns]

25 50 75 100 125 150 1751

10

100


Figure 10. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.28mA)


VGE(th) ,�GAT

E-EM

ITTE

R�THRES

HOLD

�VOLT

AGE�[V]

25 50 75 100 125 1500

1

2

3

4

5

6typ.

Figure 11. Typical�switching�energy�losses�as�afunction�of�collector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�rG=34Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

0 10 20 30 40 50 60 70 80 900

1

2

3

4

5

6

7EoffEonEts

Figure 12. Typical�switching�energy�losses�as�afunction�of�gate�resistor(inductive�load,�Tvj=150°C,�VCE=400V,VGE=15/0V,�IC=28A,�Dynamic�test�circuit�inFigure E)

rG,�GATE�RESISTOR�[Ω]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

5 15 25 35 45 55 65 75 850.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00EoffEonEts

Datasheet 10 V�2.12019-01-25

IKP28N65ES5


Figure 13. Typical�switching�energy�losses�as�afunction�of�junction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=28A,�rG=34Ω,�Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

25 50 75 100 125 150 1750.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6EoffEonEts

Figure 14. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(inductive�load,�Tvj=150°C,�VGE=15/0V,IC=28A,�rG=34Ω,�Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

200 250 300 350 400 450 5000.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00EoffEonEts

Figure 15. Typical�gate�charge(IC=28A)

QGE,�GATE�CHARGE�[nC]

VGE ,�GAT

E-EM

ITTE

R�VOLT

AGE�[V]

0 10 20 30 40 50 600

2

4

6

8

10

12

14

16

18VCC�=�130VVCC�=�520V

Figure 16. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)


C,�C

APAC

ITAN

CE�[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4CiesCoesCres

Datasheet 11 V�2.12019-01-25

IKP28N65ES5


Figure 17. IGBT�transient�thermal�resistance(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�RES

ISTA

NCE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0380312.9E-5

20.3478613.0E-4

30.5311612.6E-3

40.2195160.012777

50.0141730.205304

62.0E-32.82131

Figure 18. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�RES

ISTA

NCE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0490643.1E-5

20.4347673.1E-4

30.6112412.5E-3

40.2306290.012964

50.0154350.2095

62.2E-32.750175

Figure 19. Typical�reverse�recovery�time�as�a�functionof�diode�current�slope(VR=400V)

diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]

trr,�R

EVER

SE�REC

OVE

RY�TIME�[ns]

500 750 1000 1250 1500 1750 2000 2250 25000

20

40

60

80

100

120

140Tvj = 25°C, IF = 28ATvj = 150°C, IF = 28A

Figure 20. Typical�reverse�recovery�charge�as�afunction�of�diode�current�slope(VR=400V)


Qrr ,�REV

ERSE

�REC

OVE

RY�CHAR

GE�[µC]

500 750 1000 1250 1500 1750 2000 2250 25000.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6Tvj = 25°C, IF = 28ATvj = 150°C, IF = 28A

Datasheet 12 V�2.12019-01-25

IKP28N65ES5


Figure 21. Typical�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)


Irr,�R

EVER

SE�REC

OVE

RY�CURREN

T�[A]

500 750 1000 1250 1500 1750 2000 2250 25000

5

10

15

20

25

30

35Tvj = 25°C, IF = 28ATvj = 150°C, IF = 28A

Figure 22. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)


dIrr /dt,�diode�peak�rate�of�fall�of�I

rr �[A/µs]

500 750 1000 1250 1500 1750 2000 2250 2500-700

-600

-500

-400

-300

-200

-100

0Tvj = 25°C, IF = 28ATvj = 150°C, IF = 28A

Figure 23. Typical�diode�forward�current�as�a�functionof�forward�voltage

VF,�FORWARD�VOLTAGE�[V]

IF ,�FORWAR

D�CURREN

T�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80Tvj = 25°CTvj = 175°C

Figure 24. Typical�diode�forward�voltage�as�a�functionof�junction�temperature


VF ,�FO

RWAR

D�VOLT

AGE�[V]

25 50 75 100 125 150 1750.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00IF = 7.5AIF = 14AIF = 28A

Datasheet 13 V�2.12019-01-25

IKP28N65ES5


Package Drawing PG-TO220-3

Datasheet 14 V�2.12019-01-25

IKP28N65ES5


t

a b

td(off)

tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V�2.12019-01-25

IKP28N65ES5


Revision�History

IKP28N65ES5

Revision:�2019-01-25,�Rev.�2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2019-01-25 Final data sheet

Trademarks

All�referenced�product�or�service�names�and�trademarks�are�the�property�of�their�respective�owners.��

Published�byInfineon�Technologies�AG81726�München,�Germany©�Infineon�Technologies�AG�2019.All�Rights�Reserved.

Important�NoticeThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics(“Beschaffenheitsgarantie”).�With�respect�to�any�examples,�hints�or�any�typical�values�stated�herein�and/or�anyinformation�regarding�the�application�of�the�product,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�andliabilities�of�any�kind,�including�without�limitation�warranties�of�non-infringement�of�intellectual�property�rights�of�any�thirdparty.

In�addition,�any�information�given�in�this�document�is�subject�to�customer’s�compliance�with�its�obligations�stated�in�thisdocument�and�any�applicable�legal�requirements,�norms�and�standards�concerning�customer’s�products�and�any�use�ofthe�product�of�Infineon�Technologies�in�customer’s�applications.

The�data�contained�in�this�document�is�exclusively�intended�for�technically�trained�staff.�It�is�the�responsibility�ofcustomer’s�technical�departments�to�evaluate�the�suitability�of�the�product�for�the�intended�application�and�thecompleteness�of�the�product�information�given�in�this�document�with�respect�to�such�application.

For�further�information�on�the�product,�technology,�delivery�terms�and�conditions�and�prices�please�contact�your�nearestInfineon�Technologies�office�(www.infineon.com).

Please�note�that�this�product�is�not�qualified�according�to�the�AEC�Q100�or�AEC�Q101�documents�of�the�AutomotiveElectronics�Council.

WarningsDue�to�technical�requirements�products�may�contain�dangerous�substances.�For�information�on�the�types�in�questionplease�contact�your�nearest�Infineon�Technologies�office.

Except�as�otherwise�explicitly�approved�by�Infineon�Technologies�in�a�written�document�signed�by�authorizedrepresentatives�of�Infineon�Technologies,�Infineon�Technologies’�products�may�not�be�used�in�any�applications�where�afailure�of�the�product�or�any�consequences�of�the�use�thereof�can�reasonably�be�expected�to�result�in�personal�injury.

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HeaddataTable of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

trenchstoptm current rapid 1 fast and soft anti parallel diode · datasheet please read the...

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