UCSB and Teledyne

(37 years)

Bobby Brar

0

Teledyne Technologies – Four Segments – $2.3B in FY 2015

April 2017 1

• RF & Microwave Components

• Digital Flight Data Systems

• Satcom Amplifiers and Modems

• Jamming & Electronic Warfare

• Offshore Energy

• Ocean Health & Climatology

• Aging U.S. Infrastructure

• Air & Water Quality

• Military & Space System

Development and Integration

• Radiological Analysis

• Energy Systems

Engineered Systems

Aerospace and Defense

Electronics Instrumentation Digital Imaging

• Visible & Infrared

Sensors and Cameras

• LIDAR

• Signal/Image

Processing

• Optics

Teledyne’s Acquisition History(a)

2

Teledyne

Scientific &

Imaging

TDY Financial Metrics Excellent ROI Track Record

$37 $43 $47

$67

$101

$125

$162

$189

$166

$179

$227

$243 $240

$295

$282

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1.00

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0

50

100

150

200

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350

2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

EBIT $M EPS $

$M

4.9% 5.6% 5.6% 6.6% 8.3% 8.7% 10.0% 10.0% 9.4% 10.9% 11.7% 11.4% 10.3% 12.3% 12.3% EBIT %

April 2017 3

Teledyne Central Research Laboratory

A Unique Asset

April 2017 4

Government, Customer and Teledyne funded R&D

Our Business Model

Government funding supports early stages of novel, high-risk technology development

Researchers work jointly with Teledyne’s operating businesses, their customers, and strategic partners to commercialize technology

Established in 1962 100 technical staff ~ 45% PhDs Over 300 active patents

History of Teledyne and UCSB = People

April 2017 5

• Robert Mehrabian

• Larry Coldren

• John Bowers

• Mark Rodwell

• Scott Grafton

• Brad Chmelka

• Umesh Mishra

• Herb Kroemer

• Art Gossard

• David Awschalom

• Elliot Brown

• Steve Long

• Pochi Yeh

• David Clarke

• Fred Lange

• Miguel Urteaga

• Zach Griffith

• Adam Young

• Chanh Nguyen

• Bobby Brar

• Olivier Sudre

• Sergio Lucato

• Janet Davis

• Sid Bhargava

• Liz Rangel

• Andy Carter

• Andrea Arias

• Bo Shojaei

• Gerry Sullivan

• Richard Blank

• Dan Denninghoff

• Mark Field

• Dennis Scott

• Devin Leonard

• Mason Thomas Recent

GaAs Electronics

Grew out of DoD funding in mid-70’s & SC’s Si Valley entreprenurial spirit

Assembled world’s strongest technical team > 100 researchers at SC in mid-70s

> 30 years of DoD funding with diverse applications

Co-invested with DARPA to establish GaAs “Pilot Line” (‘85)

Seeded many GaAs-based companies Gigabit Logic, Vitesse (1st gen tech)

Rockwell Semiconductor > Connexant - Skyworks - Mindspeed

SC technology in every iPhone! (produced at the “pilot line”)

Licensing success with MOCVD Generated > $75 M in royalty income

From Derek Cheung

High Level Capabilities

April 2017 7

R&D Business – Impact to Tdy

Semiconductor Fab

RF/mmWave MMICs (Design/Pkg)

Gsps ADC/DAC (Design/Pkg)

MEMS

Chip-Scale Atomic Clocks

Resonators for Gyros

Thermal analysis/design

Signal Processing/Algorithms

Materials

Failure Analysis / Test

New Materials

Ceramics

Coatings In Partnership with UCSB

mmWave is as much an integration/packaging challenge as a

device/circuit challenge

April 2017 8

Device, Circuit

mmWave “Package”

ADC

Low-loss 2.5D

interconnect

Heterogeneous

3D Integration

InP

GaN

SiGe

InP Started with Mark Rodwell (DARPA TFAST)

Key scaling challenges

emitter & base contact resistivity

current density→ device heating

collector-base junction width scaling

& Yield !

key fig

ure

s o

f merit

for lo

gic

speed

Rodwell 2002: InP HBT Scaling Roadmaps

2002 2012

“THz” CPW-G Common-Base Amplifier Designs

130nm InP Technology

April 2017 10

CPW-G Common Base amplifier designs used for tracking process yield and

performance

8-stage (550GHz) and 9-stage (670GHz) amplifier designs with separate emitter and

collector bias supplies

550GHz Amp Design 670GHz Amp Design

Integrated 580GHz PLL receiver with Differential

Common-base Amplifier

April 2017 11

• Functional testing of PLL-RX and PLL-TX components underway

• Receiver with a 6-stage stacked differential common-base amplifier with an

integrated 190GHz Phase Locked Loop driving a 3rd order sub-harmonic mixer

• Chip dimensions: 1.95x0.7mm2

• DC power dissipation ~0.7W

Chip Photograph

195GHz PLL

LO Buffer

Amp

SH

Mixer

PLL

REF

IF

Input RF

Output

Differential Low Noise Amplifier

UCSB Low-power mm-wave transceiver study

Phase Shifter

VGA

PA_V

PA_H

LNA Phase Shifter

VGA

V_Antenna

H_Antenna

Rx_V Output/ Tx Inpout

Rx_H Output

V/H Switch

InputT/Rx Switch

OutputT/Rx Switch

• Designed at UCSB • Fabricated at Teledyne in 130 nm InP • Tested at Teledyne by UCSB • Excellent fidelity between

measurement and simulations • Validates path to higher efficiency

transceivers at mmWave

-30

-20

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10

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10

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75 80 85 90 95 100 105 110

S(2,1), VS(2,1), HS(1,1), V

S(2,2), VS(1,1), H

S(2,2), H

S(2

,1)

(dB

)

S(1

,1), S

(2,2

) (dB

)

Frequency (GHz)

Tx, 1.5 V

-30

-20

-10

0

10

20

30

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-20

-10

0

10

20

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75 80 85 90 95 100 105 110

S(2,1), VS(2,1), HS(1,1), VS(2,2), VS(1,1), HS(2,2), H

S(2

,1)

(dB

)

S(1

,1), S

(2,2

) (dB

)

Frequency (GHz)

Tx, 1 V

@ ICtrl = 0.4 mA, QCtrl = 0.3 mA (Phase shifter gain: -5 dB)

14

16

18

20

22

24

-15

-10

-5

0

5

-40 -35 -30 -25 -20 -15 -10

Gain, VGain, HPout, VPout, H

Gain

(d

B)

Ou

tpu

t Po

wer (d

Bm

)

Input Power (dBm)

Tx, 1.5 V

8

10

12

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20

22

24

-15

-10

-5

0

5

-40 -35 -30 -25 -20 -15 -10

Gain, VGain, H

Pout, VPout, H

Ga

in (

dB

)

Ou

tpu

t Po

wer (d

Bm

)

Input Power (dBm)

Tx, 1 V

-30

-20

-10

0

10

20

30

-30

-20

-10

0

10

20

30

75 80 85 90 95 100 105 110

S(2,1), VS(2,1), HS(1,1), V

S(2,2), VS(1,1), H

S(2,2), H

S(2

,1)

(dB

)

S(1

,1), S

(2,2

) (dB

)

Frequency (GHz)

Rx, 1 V

@ ICtrl = 0.4 mA, QCtrl = 0.3 mA (Phase shifter gain: -5 dB)

-30

-20

-10

0

10

20

30

-30

-20

-10

0

10

20

30

75 80 85 90 95 100 105 110

S(2,1), VS(2,1), HS(1,1), V

S(2,2), VS(1,1), H

S(2,2), H

S(2

,1)

(dB

)

S(1

,1), S

(2,2

) (dB

)

Frequency (GHz)

Rx, 1.5 V

14

16

18

20

22

24

-20

-15

-10

-5

0

5

-40 -35 -30 -25 -20 -15

Gain, VGain, HPout, VPout, H

Gain

(d

B)

Ou

tpu

t Po

wer (d

Bm

)

Input Power (dBm)

Rx, 1.5 V

10

15

20

25

-15

-10

-5

0

-40 -35 -30 -25 -20 -15

Gain, VGain, H

Pout, VPout, H

Ga

in (

dB

)

Ou

tpu

t Po

wer (d

Bm

)

Input Power (dBm)

Rx, 1 V

Transmit

Receive

InP HBT ICs

• 250 nm 350/600GHz Ft/Fmax, 4.5V process

– mmWave amps, samplers, edge-generators

– Design and Fab

13

250 nm InP HBT

4-level Interconnect 14-bit RF RZ-DAC

235 GHz Power Amplifier

Track-and-Hold with 40 – 50GHz

100GHz

InP Amplifier Products 14

200GHz PA Product

http://www.teledyne-si.com/ps-mmic-power-amplifier.html

Chart 15

InP switch product

40 Gbps 48 Gbps 56 Gbps

N-polar GaN with Umesh Mishra

April 2017 16

• Very promising technology

for higher output power at

mmWave frequencies

Chart 17

mmWave Experience: SiGe RFIC Design Services

20/30GHz

44-50GHz

94GHz

4-20GHz

Chart 18 The future of mmWave Packaging

2.5D On-Wafer Heterogeneous Integration