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NMI1'ZOase goveimat or other drawimg.,so a.figations or other data, ane wed for may purposeOther than in CAonnetiOn With A defiuitel.y wslAtfdgovrmitt procumismnt operation, the Us 5.Goveimsnt thereby incurs no reupnsibilityp nor myob2Jgation *atsoevrl ad the ftot that the GOver.ment my hae" famA]Ato41 forsked, or in ay nysupplied the inMd &mnin,# apaifloatima, or otherdata to not to be regarde by iupliaation or other.vise as in any manner ioessing the holder or syother persom or corporatica, or ocveyinS my ri&%tsor pezuission to msmfteture, use or sell eqpeteated imvstion that my in eq may be melted%onu'to.

W*t

1 An L.Band Tunnel Diode Osillator

Report No. 3W9

en. Third Quarterly Progress Report

1 December 1962 through 21 Pebruary 1962

Contract No. DA36.039 SC.90773DA Project No. 3A99.21.002

for

US. Army Electronics Researchand Development Laboratory

cFort Monmouth, New Jersey

CO b-RADIO CORPORATION OF AMERICA0 ; Electron Tube Division

Microwave Tube OperationsHARRISON, N. J.,1,

* 1! X

ANTIA AVAILABILITY NOTIM~ Qualified j'uquestorp may obtaincopies of this report fr~om AITIA, AITIA release to OTS not

authoised

I

y

An L.hnd Tumid Dode Osclhws

Report No. 3I Third Quarterly Progreus Report

1 December 1%N2 through 21 February 193'

I The obloctli' of this program Is to develop a tunable tunne.diedesslilator giving 25 mlliwutti eutput In the frquenty rawl160 to I= molsyelk, = is to be deosin fminimum preduetlon aest end shell be edepteble to redlesendeepp!!eetions,

Contract No, DA36-039 SC.90773

Signal Corps Technical Requirements

No. SCL.7662 Datod I1 December 1961

DA Project No 3A99.21.002

Report Prepared By Report Approved by

D. 1, Nelson Frank U. Vaccwo

I. T Ceatedilne

]

I;

I!

ZZ Abtast

vI 1aea Data

=mtwatLim

Faggue 2. y.'. U.d E~se U1

Film' I v.24 oeaud Peles1

Figus Oubeff "towunm To Peak Commst

Rpgm 4 @liwt fo ea fw k.A w e% oi.2@n.912w 3

Figs' 5 Ptm' ad 1u'.qw.qTovs tuuwv! 2

11gm 6 Puma od "rsqmn Yu nom 15

11'. 7 *dUta*WmYt 2A

I! Pa'.p' ferled kItw" iseva

YZ noimtlsatifm of tar 1.,.1

1.

I. The objective of this proram is the development of a tunnel-diode

oeoillat oapable of a power output of 25 millivatt. over the tunable

frequenoy range of 1660 to 1700 megaoles. Other requiremente include

a minim production cost desiin develont of mold state modulator

oirouitry and oapabilty of meting varin enviomental requixuemto

The prop'm will include the followingi

1. Development and fabrication of suitable tunnel diodes.

2. Development of tunable oscillator circuts.

3. Development of modulation teohniques and oiruoite.

14. Toting of tunnel-diode oscillator units to eleotrical and

environmental upeoifoatione.

C. onstruction for delivery of 1 breadboard oscillator unit,

3 prototype oeaillatos, 6 developmental model oecillatose and

I 1I breadboard modulator unit.

I,

II

3.IIle Abstaot

A breadboard model oscillator was delivered (Item Um on the oontraot).

Twnel diodes were fabricated from a more highly doped oarstal having

peak currents of 500 ma with outoff frequenoies in excess of 9 lotto

Several of the diodes made from the highly doped orstal. were tested

in stripline oscillator@ and gave powers of 24 to 28 am at 1700 Vi.

Preliminary tests wee on a tunnel diode awrent regulater and also

en the mplituio modulation of the striplim. oscillato.

I

1 3,

Mn. Publications, Lectures, Reports and Conferences

There were no publications. lectures or reports during this report

period. The following conference was holdo

I General Discuusion ad Review of Contraot, Janary 240, 1963 at ACA

Lab4ratories, Princeton# No Jo

Presentl bvan L. Chas - U.,$oAoSR.DoL.

o. Kinbleton - U.5.A.o.R.D.L.

g. MoCormiok - U.o.AI.R.DL.

D. Xelaon - RCA Microwave Tube Operations

F. Steruor - RCA Microwaey Tube Operations

1. Vacoaro - RCA Microwave Tube Operations

0. J. a was - RCA Zleootrn Tube Division

R. H. Bisemns - RA 3leotron Tube Division

The breadboard oscillator unit (Item 3a under the Contract) was

demonstrated and delivered to W', eablton. The di cusion covered

general progress under the contraot as wll as battery requirements,

modulation considerations and environmental requirments. It was apeed

that RCA will make AN modulation t-ts using the RCA transistor modulator

and that the breadboard umit wvil be tosted with a Signal Co e modulator

at the Signal Corps Laborstories.

IT. lotual Data

A. Introduction

The overall effort during this quarter ws approximtely at the pro-

jeoted rate.

The major effort on the proiam was directed toward improvement of

diodes anid the fabrication and teot of a breadboard oscillator for deli-

very under the contract (Iten 3a). Other areas receiving attention were

oiouit development and preliminary amplitude modulation test.

3. Tunnel Dioes

1. Packaging

The tunnel diodes fabricated during this quarter 'were mounted

in the reduced height strip-lrn type diode package as described in the

previous reports, with two modifications. Firmtp the configuration of

the maren used to contact the alloy dot to the top surface of the washer

was changed from a stripp which contacted the washer at only 2 points, to

a disk large enough to cover the I.D, of the washer aod make contact to

moet of the surface of the washer. Secondly, the maroon disk was coated

with a layer of conducting milver filled epmio Theme changes should

serve to lower the inductance of the unit and inoroao its moohaniosi

stability.

Twelve units of this trpe were subjected to a 750 oentrifuge test,

after which all the -unit were found to be intact with little or no change

at all in their electrical parmeterso The value of this teohnique as fa a

a induotanse lamvaoemet is oonoerned has yet to be determined.

oil

I

2. Diode Development

It was pointed out in the loat report that higher 1pi0 ration and

therefore higher cutoff frequencies could best be obtained by fabricating

tunmel diodes from crystal with an impurity ooncentration of 8-9 x 1019

atoms/co or higher. Some material of this type has been grown but it haa

provd to be extremely hard to reproduce. Moet of the orystal availabl

in in the range of 6 x 1019 atom/oo and attempts to fabricate diodes with

it ha" yielded low Z/O ratios and high series re istance valum. In an

attempt to increase the impurity ooncentration to the desird level# a

grown OaAs wafer war placed into an evacuated ampoule along with 4Ong of

In, The mpoule ws plaoed n a furnace at 975°0 for 18 hours and the n

allowed t~o diffuse ito the wfe, The intil result@ were poor, for the

surface of the crystal was alloyed with Zn which could not be etched off.

It seen that the method of quenching and the mine of the ampoule may be

important in determining the surfaoe oondition after diffusion. Different

quenching methods wi.ll be studied# and smaler mpoule@ w11 aLso be

evaluated.

From the equation for the cutoff frequeWm

where R im the diode negative resistance, r. im the seriem re i tanoe and 0

is the junction oapacitancep it can be seen that dooreaming the seriam re-

sistanoo will increame fom Thus, an attempt was made to reduce the series

resistance of the uits made with the material on hand to a minimum. One

mthod mployed was the etching of a hole in the pellet on the opposite side

of the junotion (see ViLM 1) aod then alloying a mtal into it. *line the

A

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resistance of a metal i less than that of a semiconductor, the resistance

1 through the unit should be lse,' Thm method failed to produce a notioeable

difference in ro.

ILapping the wfoers vO7 thinp ev 1.5 mill before alloying and proOssing

has given lower initial valus of rif o15 ohm for lo5 Nil crystal vs .165 ohm

for ) mil thick crystal, but there does not seem to be much difference after

1the units are etched.

Another approach used was to place a laver of nckel and gold on the top

surface of the pellet very close to the contact dot so that the distance from

the contact dot to the gold liqer is loom than the thickness of the wafer

(see Ft4gue 2). If contact i then made between the dot and the gold layer

the resistoice should be less than if contact was made, as usual, through

the mofor to the back of the pellet, partiou.arly at microwave frequnciese.

Results ware poor due to poeling of the film and diff iculty in making

a good ohmic contact to the pellet surface. Although good contaots probably

could be made to the topo it is not certain that there would be any distinot

advantage to much a geometry. ?hr is becausne the skin depth at 2 kso is

about 10 mile, whereas typical semicondwtor pellets are only 1 mil thick#

ecause of the greater importance of obtaining an adequate su2py of highly

doped orystal, this approach will not be pusued further.

The 2nd Quarterly Report dicused the variation of f0 o a e diode

to etched to produce a desired peak current. During this quarters this

variation was investigated for the crystal used for fabricating the micro-

wave tunnel diodes. Three diodes, having approximately the sawe initial

Ip (950 ma), which had been fabricated from the ame crystal were etched

to 25 ma in nall inorements and the diode paramters were maweod at each

I

1!

increment. Tim results we plotted in Figure 3. Zn the electroltic etch

procesos Zp decreases directly with the area# while the series resistanoe

r. increases inversely with the -square root of the area. Then as Zp is de-

creased# the product of Xp ro also decreases and the f., must increase.

iguwe 3 shows this tc be true, for as each ci? the units is etched, the

ouboff-frequency increases. It is interesting to note that each of the

nmite exhibits a maximuu at 150 ma rp. The reason for this is not quite

olear, but is being studied further.

It must be pointed out that the tunnel diodes selected for this test

were fabricated from crystal whose impurity concmtration was in the ranp

of 8.0 X 1019 atomm/o but whose initial Ip values were soma t lower than

that normally used for 600 ma diodes. This was done deliberately mines the

measuremnt of units with Ip'Is greater than 900 ma in owr present oapacitaoe

test set will most likely damage it.

The results indicated in Figure 3 point oA the possibility of shifting

the maximum f0o point to the 6no ma level through the use of the proper

combination of material and alloying cycle. This is precisely udiat we

attempt to do when fabricating units of that type.

During this quarter, 2$ tunnel diodes were produced for circuit evolua-

tion and testing, Of these, five had superior electrical characteristics

due to the high doping loyal (08 x 1019 atoms/cm3) of the starting crystal

and the use of an optimum alloy cycle (to produce a very high ourenmt

density), butoff frequency for three of these diodes (Ip * 500 ma) W

greeter than 9 kmo. Several of these diodes gave power outputs of 24 to

28 milliwtts at 1700 m. This represents a marked lmprovaeft over pr vio

reoults (17 w at 1680 no).

1,

]* a.

a. Oosillator circuit Investigation

A breadboard omaillaterp 0116 serial No. 001, was fabricated, tested

and delivered as itm 3a under the oontract. The oscillator employed a

circular reentrant striplins circuit. A sketch of the circuit is shown in

Figure 4, Tuning was accompliahed by mans of 10 pt variable ondenser.

The tunnel diode was a gallim-arsenlds' triplin. padcage unit having the

following oharacteristics

Peak Current 5 a.

Series Remeitaie o.3 ohm.

Oapacitance 29 p.f.

Ourves of power output and frequency of the oscillator versus tmer turns

are shown in Figwe 5. imila, curveus veruss bias voltage are given in

Flgie 6. The pulling figure of the oscillator at a 1.5 U wis vs No,,

A 10 db isolator placed at the output of the eillaterp reduced this

value to 7 No.

The five diodes Wode from a cryital doped to a higher lewIv* discumed

at the and of Section IV 3.21 were tested in a reentrant stripline oscillator

circuit similar to that of Figre 4. The three diodes hating peak oawrents

of 500 ma were very consistent, giving power oitputs of about 25 a, at about

1700 o. The 110 ma and 400 ma peak current diodes were lower' in both power

output and frequency of operation. The reason for this is not obviou frm

the diode heoraoterietes, The ehiracertsittoe and t e t results are tabulated

bolow,

I 9.

Table z

No r~o pax 9 IO~o Output hOerNo. ourent pf lmeqm, y* to aw

485-1 500 30 7.Li $80 1800 23 1690 No

58o 1830 g6 1716 Iap

485.32 510 '36 9.5 1490 1160 18 I~il No

485 170 21 1576 Ye

I48540 500 20 11.0 515 2250 26 162%I N$40 100 28 1735 yes

316-18 500 39 9.9 V$ 1270 22 1520 No

560 1270 24 1710 yes

W8-9 i400 26 669 140 1230 1%5 1583 NO

_ 475 1260 16 1632 yes

The revised quarter-wave ooaxial oscillator described i r the Soond

Quarterly Progress Report wis fabricated and tested. The frequency of

operation was below 1000 M and the power output loe than 1 w, This

is believed to be due to the bias input oircuit; however, due to the

prmising results with stripline ol illators, furter wrk on the oeaial

oscillator will be givon low priority.

D. Power Supp3y and odulator OirouitYr,

Preliminary testa were made of a current regulator consisting of a

low speed germanium tiunel diode with a utabiliming resistor painted on

the outside of the diode package. This combination gives a flat current

Versua voltage clhraoteristic over a voltage range of 100 to 150 m. It

is connected in series with the tunnel diodo .eoillatir and thus redmos

II

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10.

the voltage variation Appearing across the oscillator when the bias oup3

voltage is varied, When teted with a TD oscillator the regulator reduced

the frequenoy variation of the oscillator due to a + bias voltage varia-

tion from 30 4 to 4 VA. There was modulation of the oscillator, however,

dim to low frequency oscillations of the regulator, A simple filter

elmiatoed much of the modulation but soma modulation still remaimd at

oegse4a~ "lwo. of bias voltage. Frther -fork is required to inorease the

pit e; o he regulator and to elitinate the remainins modulation,

The tranuistor blooking oeoillAtor modulator described in the FiSrst

Qurterly Report vaa used to modulate a TD osoillator. The oscillator was

operated at a peak power of 1, aw and a frequency of 1670 No. The pulse

width of the modulator was 33 mioroeconds. The modulator required an

Input voltage of 12 volts end the current input varied from 100 m at

5 p.p.e, pulse repetition rate to 500 a at 8300 p.p.s. The control

resitanoc which determines the pulse repetition rate wu 3S#000 ohms

for $7 pps and 0 ohms at 0300 pps. Figure 7& shown the wavefom of the

modulator output and Figure 7b that of the rectified output of the twmel

diode oscillator. The rf spectrum of the oscillator Is shown in Figure 7.

In general the results nom reasonaby promising except for the control

resietance raige of the modulator vhich is mudh low than desired.

I

I

ALLOY DOT

I FIG. I REVARSE ETCHED DIODE

PELLET

I FIG.2 GOLD COATED PELLET

IL

0g46

I CAIvmowom AIi..n

TUNNEL DIODE

.030 STRIP LINE IIREu, ?uCrIPUTRANSFORMER

MICA TUNNEL DIODE

I CIRCUIT

R JUT UT UTTUNING CONDENSER

FIG 4 CIRCUIT FOR BREADBOARD MODELOSCILLATOR 88 116 SER. NO. 001

34

116

log PFRIQUIENCY60

BIAS Vo 441m RN 1o2

It- 1770

14J.. 1750

17 1770

11 FMCQUENC - 1670

BIA %.. 710

1 to710-,w50mA 11go

AIs -

l~bS-1700

155 POW IIIog

145- 0l0OGO6FR90UENCY

13.5 -1640

35 - -1630

11. op- -1600

IQ 4TNER, TURNS(3jCc-W) 19

16 -1700

.1660

10 oe 1640 0:

FTEUNCYo 00-10

POWE 1660

0 -1640TUNER TURNS(4ih CCW)

I i I I - -- 1630400 430 440 460 400 500 530 540 NO

BIAS VQLTAGE(mV)

FIGS6 POWER AND FREQUENCY vs. BIAS(88116 8CR. NO. 001)

16

(a) OUTPUT OF MODULATOR (b) RECTIFIED OUTPUT OFHORIZONTAL SCALE TD OSCILLATORSOMuSEC/CM HORIZONTAL SCALE

20p 8EC/CM

(C) RF SPECTRUM OFTOOSCILLATOR HORIZONTALSCALE BOKC/CM

FIG. 7 MODULATOR WAVEFORMS

I

tg 0t to inareae the otoff frequno7 of 500 mA peak cwent #lUim

arsenide tumnel diodes through reduction of series resLmtanhoo have been un-

musoemiful to date. Howeverp t rough the use of highly doped Orytals

(a x 1019 atomm/os 3) a niaber of 500 m diodes hae been made wit euteff

frequencmes greater than P DI,

I Poor output of 24 to 28 w at 1700 N were obtained frm then diedem

operated in reentrant riq stripl cimo o s.

A breadboard model ooillateo r titoe 3& mieo the o o a ert) was delivered.

?he osoillator gave a power output of to 34 w over the required 1"0 to

1700 me tuning ranwe

Prelimina7 toe t wor mde on the use of a tmml diode current rol-

later to reduce oeoillator frequency ohnges as the bia yam variod, The

tmahod ism promiuing although frther improvement is required.

A twml diode oscillator was aulitude modulated uing ih transistor

msuate described in the PFirt Quarterly Proeso Iport,

I,

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TZ tWAm for Next Interval

Techniques for increasing diode cutoff frequenoM and self.e emt

frequency will be inwestigated fwther.

The study of diff tmion methods, fr obtulning high3v doped crystal wll

be continued#

Tests of strtplins oscillator circuits wll be continued and the desigp

of output circuits to reduoe frequenoy pu Wll vill be inveetigated.

Use of nonlinear etabilising eiste rse to redfes t1m do p wr require

mts will be attemtede

The tunnel.-diod curent regulator development will be continued.

Develoment of modulators fw the TO oscillator will be ontinued.

11

19.

VIZ. Identiftoation of ey Personnel

Robert D. Oold 3insertng Leader 27 how

Chester Ouraoe - Wginser 16 how.

Dona2d 3. Nelson - Mumber of Toohntal Saff 201 how

Adam J. PIko. - nginewr 195 hour

Pred toer - 3hginnerag leader 19 how.

Aigr T. Castorlino - Ingior 71 hours

W. Castorlino wan born on Muoh 14#, 193 in Now York 0ity. He rooeived

his B.S. dopee in Chemistry from Manhattan CollegO in 196. Mo 8u owrenty

puruing a coure of study for an Xoio in Phvical Chemistry at Stewns Zn-

stituto of Tsohnology.

tI'oa 1956 to 1991, he was euplpl by the Veetmn l.eotiri O.pq, as

an nalytioal Ohemist.

Ho entered the US. Military Servoe in 1957 and was auiped to the

U.S. rWjr Signal Roeoarh and Developmmt laboratoz7 at Fort Nomouth, N w

Tohue7 where he spent two years engaged in work on thin film resistors and

) eapecitore, and ther aoeotr£io cooling devioo,

In 19590 ho joined the Nioramodule group of the ROA Iomioondu tor and

Mtrial. Division where ho worked chiofly on the development of thin film

reoitore and mioromodule.,

Zn 1960, he joined the Oomputer roup. His work conmisted mainly of

reseah and doelopment on tunnol. diodes, One of his main responsibilities

we the development oan tunnel diodes, No was also responeible for the

dewelopment of gerwm ant. tmo. reotifiere f the fLtnt N peoject.

in e b"'-ru , 1963# he was asmsined to the Industrial Products PIqp

wihe heli onti.nuing his work an the devlomnt ofboth Cam and O@

tunnel diodes.

Xoward Bertram - Angineer 10 hours

W. Bertrum studied oourses leading to an A.. degroe in Chemistry at

Rutgers University College, Wron isig too m 19$0 to 1904.

Trom 19%0 to 197p, Mr. Bertra was with the .. Atomio rg" Omsuslmon

u a Process Development Ohemist. While there# he made sgniioant oontrbu-

tiona to the development o a continuous gas-olid reactor@

In 19,p 1, Bertram joined the RGA Imulaonduotor an 1Daterials Divlsonp

osrvlloep N. J, where his assignments have been in the rea of devie

ohemistry arki tabrtoation. His major oon tbution hae inclod the develop-

ment of a batch-type oannector soldering process for the m nufactie o allay

juiotion translmtorm which slgniflant .y reduoed the proalllagl cost of this

operation, and the developient ot a process for automatic dot-pressing and

alloying which permitted the oontinuou. mnufaoture of alloyed transistors

in strip form. UInce Ootober, 1960 Mr. Bertram has been actively engaged In

6he development of single Orystal growth f gallium arsenide, gie has done

extensive work on vertioal growth by the Osoohralski method and the pilot

line production of gallium arsenide orstal by the horisontal Bridllan teoh-

nique.

Pr. Bertram has authored papers in the teohnoal literatue. Me has

been issued a U,.. patent*

I,

Pap I

DA6-039 IC-90778 Ird Quarterly ReportRadio Corporation of America I December 1941 - 13 February 196I

OAAD (Rhq), Rm3Blo65Attni Technical LibraryThe PentagonWashington 135 D. C, I

Chief of Research & DevelopmentOCI, Department of the ArmyWashington as, D, C.

Commanding OfficerU, S, Army Electronics CommandAttnt AMIEL-ADFort Monmouth, New Jersey 3

DirectorU. 5. Naval Research LaboratoryAttni Code 2097Washington 25, D. 0, 1

Commanding Officer & DirectorU, B, Navy Eleatronics LaboratorySan Diego 52 California I

CommanderAeronautical Systems DivisionAttni ASAPRLWright-Patterson Air Force Base, Ohio

CommanderAir Force Cambridge Research LaboratoriesAttn: CRXL-RL. C, Kanscom FieldBedford, Masuachusetts I

CommanderAir Force Command & Control Development DivisionAttni CRZCL. 0, Hanscom FieldBedford, Massachusetts 1

CommanderRome Air Development CenterAttni RAALDGriffies Air Force Use, New York

Pap a

DABe-039 00-90773 Ird Quarterly ReportRadio Corporation of America 1 December 103 - II February INS

Commanding GeneralU. U, Army Material CommandAttn R&D DirectorateWashington a5, D, C. I

Commanding OfficerU. 1, Army Communications & Electronics Combat Development AgencyFort Huachuca, Arimona I

CommanderArmed Norvices Technical Information AgenoyAttna TIIIAArlington Hall RationArlington 13, Virginia 10

ChiefU, 5, Army Security AgencyArlington Hall StationArlington 12, Virginia I

Deputy PreidentU, S. Army Security Agency BoardArlington Hall StationArlington 12, Virginia

Commanding OfficerHarry Diamond LaboratoriesAttn: Library, Rur, 11, Bldg. 93WAehington 25, D. C.

Commanding OfficerU, 0, Army Electronics Mteriel dupport AgencyAttnt UELMI-ADJFort Monmouth, New Jersey

Corps of Engineers Liaison OfficeU. I, Army Electronice R&D LaboratoryFort Monmouth, Now Jersey I

AFIC kientific/Teohnlcal Liaison OfficeU, S. Naval Air Development CenterJohnsville, Pennsylvania

Pap 3

DA36-039 30-90773 Ard Quarterly ReportRadio Corporation of America I December 1I1 - 28 February 19U

Advisory Group on Electron Devices340 BroadwayNew York 13, New York

Marine Corps Liaison OfficeU. 1, Army Electronics R&D LaboratoryFort Monmouth, New Jersey

Commanding GeneralU. 0, Army Combat Developments CommandAttni CDCMR-EPort Belvoir, Virginia

HeadquartersElectronic Systems DivisionAttni hOATL. G. Hanscom FieldRedford, Massachusetts

Commanding OfficerU. I. Army Electronics Research UnitP. 0. Box 205Mountain View, California

Commanding OfficerFrankford ArsenalAttni ORDBA-FELPhiladelphia 37, Pennsylvania

Commanding GeneralRedstone ArsenalAttn: Techftibal LibraryHuntsville, Alabama

Commanding OfficerWatertown ArsenalAttn: OMROWatertown, Massachusetts

Rome Air Development CenterAttni Mr. Lester Oubbins (RANOGRGriffism Air Force BaseRome, New York

Pap 4

DA36-039 OC-90773 3rd Quarterly ReportRadio Corporation of America I December iN - go February 1068

i Distribution-List

Microwave Associates, Inc,Northwest Industrial ParkAttn Mr, M, HinesBurlington, Massachusetts

General Electric Electronics LaboratoryAttni C. Lolyraouse, New York

General Telephone A Electronics LaboratoryAttnt W. HauerBayside, New York

Motorola, Inc,Attni F. Kemmeris0201 East McDowell RoadBcottsdale, Arimona

Bell Telephone LaboratoriesAttn: R, RyderMurray Hill, New Jersey

Aircraft ArmaimetsAttni Dick BauerBaltimore, Maryland

Commanding OfficerU. S, Army Electronic Materiel AgencyAtt BELMA-RobIndustrial Preparedness Activity295 South 18th trectPhiladelphia 3, Pennsylvania

DirectorFort Monmouth OfficeU. I, Army Communications & Electronic.

Combat Development AgencyFort Monmouth, New Jersey

Mr, A, H, YoungCode SAIAoemiconductor Group

Bureau of sihpsDepartment of the NavyWashington 15, D C,

IPage 5

DA34-039 3rd Quarterly ReportRadio Corpoation of America I December 106 - Sl February 1908

Commanding Offlool'U. 0, Army Electronico R&D LaboratoryFort Monmouth, New JerseyAttni Director of Remarch/ Engineering 1Attni Technical Documents Center 1Attns Technical Information Division 3Attni Rpto Dist Unit, Solid State & Freq Cont Div (Record Cy) IAttni Ch, N&M Br., Solid State & Frequency Control Division IAttns Ch, M&QE Br,, Solid State & Frequency Control Division IAttni Director, Solid State & Frequency Control Division IAttn: Mr. Matthel, Solid State & Frequency Control Division IAttnt Met Div., Met Sys Br, p Mr. Edward Doweki 1Attn1 I. Chase, Solid State & Frequency Control Division 3

IMicrb StateAttn: Aaron Kestenbaum153 Floral AvenueMurray Hill, Long Island, New York I

USAELRDL Liaison OfficerRome Air Development CenterAttni RAOLOriffis Air Force Base, New York I

Total number of copies to be distributed 68

I This contract is supervised by the Solid State & Frequency Control Division,Electronic Components Department, UNAELRDL, Fort Monmouth, New Jersey,For further technical information contact Mr, I. Chase Project Engoner.Telephone 53-5n35,

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