unipolar hall switch - infineon technologies

Unipolar Hall SwitchHigh Precision Automotive Unipolar Hall Effect Switch

TLE4964-5M

SP000997958

TLE4964-5M

Sense & Control

Data SheetRevision 1.2, 2019-12-20

TLE4964-5M

Data Sheet 2 Revision 1.2, 2019-12-20

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

List of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1 Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51.3 Target applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61.4 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2 Pin configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.5 Functional block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92.6 Default start-up behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

3 Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123.3 Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133.4 Electrical and magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143.5 Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184.1 Package outline PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184.2 Packing information PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184.3 Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194.4 PG-SOT23-3-15 distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194.5 Package marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

5 Graphs of the magnetic parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Graphs of the electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table of contents

TLE4964-5M


Table 1 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Table 2 Pin description PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 3 Absolute maximum rating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 4 ESD protection (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5 Operating conditions parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 6 General electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 7 Magnetic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 8 Magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 9 Electro magnetic compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

List of tables

TLE4964-5M


Figure 1 TLE4964-5M in the PG-SOT23-3-15 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Figure 2 Pin configuration and center of sensitive area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Figure 3 Functional block diagram TLE4964-5M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Figure 4 Timing diagram TLE4964-5M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 5 Output signal TLE4964-5M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 6 Start-up behavior of the TLE4964-5M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 7 Basic application circuit #1: only pull-up resistor is necessary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 8 Enhanced application circuit #2: for extended ESD robustness. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 9 Definition of magnetic field direction PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Figure 10 EMC test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Figure 11 PG-SOT23-3-15 package outline (all dimensions in mm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 12 Packing of the PG-SOT23-3-15 in a tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 13 Footprint PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 14 Distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 15 Marking of TLE4964-5M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 16 Operating point (BOP) of the TLE4964-5M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 17 Release point (BRP) of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 18 Hysteresis (BHys) of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 19 Power on time tPON of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 20 Signal delay time of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 21 Supply current of the TLE4964-5M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 22 Supply current of the TLE4964-5M over supply voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 23 Output current limit of the TLE4964-5M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 24 Output current limit of the TLE4964-5M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . 22Figure 25 Output fall time of the TLE4964-5M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 26 Output fall time of the TLE4964-5M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 27 Output rise time of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 28 Output rise time of the TLE4964-5M over applied pull-up voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 29 Output leakage current of the TLE4964-5M over temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 30 Saturation voltage of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 31 Saturation voltage of the TLE4964-5M over output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Figure 32 Effective noise of the TLE4964-5M thresholds over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Figure 33 Output signal jitter of the TLE4964-5M over temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

List of figures


TLE4964-5M

Product description

1 Product description

1.1 Overview

Figure 1 TLE4964-5M in the PG-SOT23-3-15 package

1.2 Features• 3.0 V to 32 V operating supply voltage• Operation from unregulated power supply• Reverse polarity protection (-18 V)• Overvoltage capability up to 42 V without external resistor• Output overcurrent and overtemperature protection• Active error compensation• High stability of magnetic thresholds• Low jitter (typ. 0.35 μs)• High ESD performance• Small SMD package PG-SOT23-3-15

Characteristic Supply Voltage Supply Current Sensitivity Interface Temperature

Unipolar HallEffect Switch

3.0 V ~ 32 V 1.6 mA HighBOP: 7.5 mTBRP: 5 mT

Open Drain Output

-40°C to 170°C

Table 1 Ordering informationProduct name Product type Ordering code PackageTLE4964-5M Unipolar Hall Switch SP000997958 PG-SOT23-3-15


TLE4964-5M

Product description

1.3 Target applicationsTarget applications for the TLE496x Hall Switch family are all applications which require a high precisionHall Switch with an operating temperature range from -40°C to 170°C. Its superior supply voltage range from3.0 V to 32 V with overvoltage capability (e.g. load-dump) up to 42 V without external resistor makes it ideallysuited for automotive and industrial applications.The TLE4964-5M is a unipolar switch with a typical operating point BOP = 7.5 mT and a hysteresis ofBHYS = 2.5 mT. It is ideally suited for various position detection applications.

1.4 Product validationQualified for automotive applications. Product validation according to AEC-Q100.


TLE4964-5M

Functional description

2 Functional description

2.1 GeneralThe TLE4964-5M is an integrated Hall effect switch designed specifically for highly accurate applications withsuperior supply voltage capability, operating temperature range and temperature stability of the magneticthresholds.

2.2 Pin configuration (top view)

Figure 2 Pin configuration and center of sensitive area

2.3 Pin description

Table 2 Pin description PG-SOT23-3-15Pin no. Symbol Function1 VDD Supply voltage

2 Q Output

3 GND Ground

1

1.45± 0.1

0.65± 0.1

2

3

SOT23

Center ofSensitive Area


TLE4964-5M


2.4 Block diagram

Figure 3 Functional block diagram TLE4964-5M

Voltage Regulator

Bias and Compensation

Circuits

Oscillator and Sequencer

To All Subcircuits

Spinning Hall Probe

Cho

pper

M

ultip

lexe

r

Amplifier

Dem

odul

ator

Low Pass Filter

Comparator with

Hysteresis

Control

Overtemperature & overcurrent

protection

GND

Q

VDD

Reference


TLE4964-5M


2.5 Functional block descriptionThe chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator andoutput transistor.The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilizethe temperature behavior and reduce influence of technology variations.The active error compensation (chopping technique) rejects offsets in the signal path and the influence ofmechanical stress to the Hall probe caused by molding and soldering processes and other thermal stress inthe package. The chopped measurement principle together with the threshold generator and the comparatorensures highly accurate and temperature stable magnetic thresholds.The output transistor has an integrated overcurrent and overtemperature protection.

Figure 4 Timing diagram TLE4964-5M

Figure 5 Output signal TLE4964-5M

AppliedMagneticField

90%

10%

VQ

tf

td

tr

td

BOP

BRP

VQ

BOPBRP0B


TLE4964-5M


2.6 Default start-up behaviorThe magnetic thresholds exhibit a hysteresis BHYS = BOP - BRP. In case of a power-on with a magnetic field Bwithin hysteresis (BOP > B > BRP) the output of the sensor is set to the pull up voltage level (VQ) per default. Afterthe first crossing of BOP or BRP of the magnetic field the internal decision logic is set to the correspondingmagnetic input value.VDDA is the internal supply voltage which is following the external supply voltage VDD.This means for B > BOP the output is switching, for B < BRP and BOP > B > BRP the output stays at VQ.

Figure 6 Start-up behavior of the TLE4964-5M

t

3V

t

tVQ

t

B > BOP

B < BRP

BOP > B > BRP

Magnetic field above threshold

Magnetic field below threshold

Magnetic field in hysteresis

Power on ramp The device always appliesVQ level at start -up

independent from the applied magnetic field !

VQ

VQ

VDDA tPon


TLE4964-5M

Specification

3 Specification

3.1 Application circuitThe following Figure 7 shows the basic option of an application circuit. Only a pull-up resistor RQ is necessary.An external series resistor for VS is not needed. The resistor RQ has to be in a dimension to match the appliedVS to keep IQ limited to the operating range of maximum 25 mA.e.g.: VS = 12 V and RQ = 1200 Ω gives IQ = 12 V/1200 Ω = 10 mA

Figure 7 Basic application circuit #1: only pull-up resistor is necessary

Figure 8 Enhanced application circuit #2: for extended ESD robustness

With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustnessof 15 kV on system level is achieved (Figure 8). If an increased robustness for e.g. testpulse 1 is required,a serial resistor in the supply needs to be added (see also Chapter 3.5).

TLE4

963-

1M

GND

Vs

RQ = 1.2kΩVDD

Q

TLE4

96x

TLE4

96x

GND

Vs

RQ = 1.2kΩ

CDD = 47nF

VDD

Q

TVS diodee.g. ESD24VS2U


TLE4964-5M

Specification

3.2 Absolute maximum ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mAPower dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mWTemperature ∆T = RthJA x PDIS = 300 K/W x 40 mW = 12 KFor TA = 150°C: TJ = TA + ∆T = 150°C + 12 K = 162°C

Table 3 Absolute maximum rating parametersParameter Symbol Values Unit Note or Test Condition

Min. Typ. Max.Supply voltage1)

1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime statement shall in no event extend the agreed warranty period.

VDD -18 – 3242

V –10h, no external resistor required

Output voltage VQ -0.5 – 32 V –

Reverse output current IQ -70 – – mA –

Junction temperature1) TJ -40 – 155165175195

°C for 2000h (not additive)for 1000h (not additive)for 168h (not additive)for 3 x 1h (additive)

Storage temperature TS -40 – 150 °C –

Thermal resistanceJunction ambient

RthJA – – 300 K/W for PG-SOT23-3-15 (2s2p)

Thermal resistanceJunction lead

RthJL – – 100 K/W for PG-SOT23-3-15


TLE4964-5M

Specification

3.3 Operating rangeThe following operating conditions must not be exceeded in order to ensure correct operation ofthe TLE4964-5M.All parameters specified in the following sections refer to these operating conditions unless otherwisementioned.The maximum tested magnetic field is 600 mT.

Table 4 ESD protection1) (TA = 25°C)

1) Characterization of ESD is carried out on a sample basis, not subject to production test.

Parameter Symbol Values Unit Note or Test ConditionMin. Typ. Max.

ESD voltage (HBM)2)

2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.

VESD -7 – 7 kV R = 1.5 kΩ, C = 100 pF

ESD voltage (CDM)3)

3) Charge device model (CDM) tests according to JESD22-C101.

VESD -1 – 1 kV –

ESD voltage (system level)4)

4) Gun test (2 kΩ / 330 pF or 330 Ω / 150 pF) according to ISO 10605-2008.

VESD -15 – 15 kV with circuit shown in

Table 5 Operating conditions parametersParameter Symbol Values Unit Note or

Test ConditionMin. Typ. Max.Supply voltage VDD 3.0 – 321)

1) Latch-up test with factor 1.5 is not covered. Please see max ratings also.

V –

Output voltage VQ -0.3 – 32 V –

Junction temperature TJ -40 – 170 °C –

Output current IQ 0 – 25 mA –

Magnetic signal input frequency2)

2) For operation at the maximum switching frequency the magnetic input signal must be 1.4 times higher than for static fields.This is due to the -3 dB corner frequency of the internal low-pass filter in the signal path.

fSW 0 – 10 kHz –


TLE4964-5M

Specification

3.4 Electrical and magnetic characteristicsProduct characteristics involve the spread of values guaranteed within the specified voltage and ambienttemperature range. Typical characteristics are the median of the production and correspond to VDD = 12 V andTA = 25°C. The below listed specification is valid in combination with the application circuit shown in Figure 7and Figure 8.

Table 6 General electrical characteristicsParameter Symbol Values Unit Note or Test Condition

Min. Typ. Max.Supply current IS 1.1 1.6 2.5 mA –

Reverse current ISR – 0.05 1 mA for VDD = -18 V

Output saturation voltage VQSAT – 0.2 0.5 V IQ = 20 mA

– 0.24 0.6 V IQ = 25 mA

Output leakage current IQLEAK – – 10 μA –

Output current limitation IQLIMIT 30 56 70 mA internally limited and thermal shutdown

Output fall time1)

1) Not subject to production test, verified by design/characterization.

tf 0.17 0.4 1 μs 1.2 kΩ / 50 pF, see Figure 4Output rise time1) tr 0.4 0.5 1 μs 1.2 kΩ / 50 pF, see Figure 4Output jitter1)2)

2) Output jitter is the 1 σ value of the output switching distribution.

tQJ – 0.35 1 μs for square wave signal with 1 kHz

Delay time1)3)

3) Systematic delay between magnetic threshold reached and output switching.

td 12 15 30 μs see Figure 4Power-on time1)4)

4) Time from applying VDD = 3.0 V to the sensor until the output is valid.

tPON – 80 150 μs VDD = 3 V, B ≤ BRP - 0.5 mT orB ≥ BOP + 0.5 mT

Chopper frequency1) fOSC – 350 kHz –


TLE4964-5M

Specification

Field direction definitionPositive magnetic fields are defined with the south pole of the magnet to the branded side of package.

Figure 9 Definition of magnetic field direction PG-SOT23-3-15

Table 7 Magnetic characteristicsParameter Symbol T (°C) Values Unit Note / Test

ConditionMin. Typ. Max.Operating point BOP -40 5.4 8.5 11.6 mT –

25 4.6 7.5 10.4

170 3.0 5.3 7.7

Release point BRP -40 3.2 5.7 8.0 mT –

25 2.7 5.0 7.3

170 1.7 3.6 5.4

Hysteresis BHYS -40 1.7 2.8 3.9 mT –

25 1.5 2.5 3.5

170 1.0 1.9 2.7

Effective noise value of the magnetic switching points1)

1) The magnetic noise is normal distributed and can be assumed as nearly independent to frequency without sampling noise or digital noise effects. The typical value represents the rms-value and corresponds therefore to a 1 σ probability of normal distribution. Consequently a 3 σ value corresponds to 99.7% probability of appearance.

BNeff 25 – 62 – μT –

Temperature compensation of magnetic thresholds2)

2) Not subject to production test, verified by design/characterization.

TC – – -2000 – ppm/K –

Branded Side

N

S


TLE4964-5M

Specification

3.5 Electro magnetic compatibilityCharacterization of electro magnetic compatibility is carried out on a sample basis from one qualification lot.Not all specification parameters have been monitored during EMC exposure.

Figure 10 EMC test circuit

Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (with external resistor, RS = 100 Ω)

Table 8 Magnetic compatibility Parameter Symbol Level / Type StatusTestpulse 1Testpulse 2a1)

Testpulse 2bTestpulse 3aTestpulse 3bTestpulse 42)

Testpulse 5b3)

1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V.3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V.

VEMC -100 V60 V/110 V10 V-150 V100 V-7 V / -5.5 VUS = 86.5 V / US* = 28.5 V

CA/CCAAAA

TLE

496x

GND

Vs

RQ = 1.2kΩ

CDD = 10nF

Rs

VDD

Q

CQ = 10nF

+5V


TLE4964-5M

Specification

Ref: ISO 7637-2 (Version 2004), test circuit Figure 10 (without external resistor, RS = 0 Ω)

Table 9 Electro magnetic compatibility Parameter Symbol Level / Type StatusTestpulse 1Testpulse 2a1)

Testpulse 2bTestpulse 3aTestpulse 3bTestpulse 42)

Testpulse 5b3)

1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V ±0.2 V.3) A central load dump protection of 42 V is used. Us* = 42 V - 13.5 V.

VEMC -50 V50 V10 V-150 V100 V-7 V / 5.5 VUS = 86.5 V / US* = 28.5 V

CACAAAA


TLE4964-5M

Package information

4 Package informationThe TLE4964-5M is available in the small halogen-free SMD package PG-SOT23-3-15.

4.1 Package outline PG-SOT23-3-15

Figure 11 PG-SOT23-3-15 package outline (all dimensions in mm)

4.2 Packing information PG-SOT23-3-15

Figure 12 Packing of the PG-SOT23-3-15 in a tape

0.25 M B C

1.9

-0.05+0.10.4

±0.12.9

0.95C

B

0...8°

0.2 A

0.1 MAX.

10° M

AX.

0.08...0.15

1.3±

0.1

10° M

AX.

M2.

4±0

.15

±0.11

A

0.15

MIN

.

1)

1) Lead width can be 0.6 max. in dambar area

1 2

3

SOT23-TP V02

3.15

4

2.65

2.13

0.9

8

0.2

1.15Pin 1


TLE4964-5M

Package information

4.3 Footprint PG-SOT23-3-15

Figure 13 Footprint PG-SOT23-3-15

4.4 PG-SOT23-3-15 distance between chip and package

Figure 14 Distance between chip and package

4.5 Package marking

Figure 15 Marking of TLE4964-5M

Reflow Soldering Wave Soldering

0.8

0.8

1.20.

91.

30.

9

0.8

0.8

1.2

1.6

1.4

min

1.4

min

Year (y) = 0...9Month (m) = 1...9,

o - Octobern - Novemberd - December

y mM45


TLE4964-5M

Graphs of the magnetic parameters

5 Graphs of the magnetic parameters

Figure 16 Operating point (BOP) of the TLE4964-5M over temperature

Figure 17 Release point (BRP) of the TLE4964-5M over temperature

Figure 18 Hysteresis (BHys) of the TLE4964-5M over temperature

4

6

8

10

12

14

B OP[mT]

Typ

Min

0

2

4

�50,00 0,00 50,00 100,00 150,00TA[°C]

Max

3

4

5

6

7

8

9

B RP[mT]

Typ

Min

0

1

2

�50,00 0,00 50,00 100,00 150,00TA[°C]

Max

1,5

2

2,5

3

3,5

4

B Hys[m

T]

Typ

Min

0

0,5

1

�50,00 0,00 50,00 100,00 150,00TA[°C]

Max


TLE4964-5M

Graphs of the electrical parameters

6 Graphs of the electrical parameters

Figure 19 Power on time tPON of the TLE4964-5M over temperature

Figure 20 Signal delay time of the TLE4964-5M over temperature

Figure 21 Supply current of the TLE4964-5M over temperature

60

65

70

75

80

t PON_m

ax[μs]

3V

50

55

60

�50 �30 �10 10 30 50 70 90 110 130 150

T�[°C]

14

14,5

15

15,5

t D[µ

s]

3V 12V

12,5

13

13,5

-50 -30 -10 10 30 50 70 90 110 130 150

T [°C]

1,4

1,5

1,6

1,7

1,8

1,9

2

I S[m

A]

Vs=3V

Vs=12V

Vs=32V

1

1,1

1,2

1,3

-50 -30 -10 10 30 50 70 90 110 130 150

T [°C]

Vs=42V


TLE4964-5M


Figure 22 Supply current of the TLE4964-5M over supply voltage

Figure 23 Output current limit of the TLE4964-5M over temperature

Figure 24 Output current limit of the TLE4964-5M over applied pull-up voltage

1,4

1,5

1,6

1,7

1,8

1,9

2I S

[mA]

-40°C

25°C

150°C

1

1,1

1,2

1,3

0 5 10 15 20 25 30 35 40 45

VS [V]

57,0

58,0

59,0

60,0

61,0

62,0

63,0

I QLIMIT[m

A] 5V

12V

32V

54,0

55,0

56,0

�50 �30 �10 10 30 50 70 90 110 130 150

T[°C]

57,0

58,0

59,0

60,0

61,0

62,0

63,0

I QLIMIT[m

A] �40°C

25°C

150°C

54,0

55,0

56,0

0 5 10 15 20 25 30 35

VQ [V]


TLE4964-5M


Figure 25 Output fall time of the TLE4964-5M over temperature

Figure 26 Output fall time of the TLE4964-5M over applied pull-up voltage

Figure 27 Output rise time of the TLE4964-5M over temperature

400

500

600

700t f

[ns]

3V

12V

100

200

300

-50 -30 -10 10 30 50 70 90 110 130 150

T [°C]

32V

400

500

600

700

t f[n

s]

-40°C

25°C

100

200

300

0 5 10 15 20 25 30 35

VQ [V]

150°C

500

600

700

t r[n

s]

3V

12V

300

400

-50 -30 -10 10 30 50 70 90 110 130 150

T [°C]

32V


TLE4964-5M


Figure 28 Output rise time of the TLE4964-5M over applied pull-up voltage

Figure 29 Output leakage current of the TLE4964-5M over temperature

Figure 30 Saturation voltage of the TLE4964-5M over temperature

400

500

600

700t f

[ns]

-40°C

25°C

100

200

300

0 5 10 15 20 25 30 35

VQ [V]

150°C

0,1

1

10

I QLE

AK

[µA

]

32V

0,001

0,01

80 90 100 110 120 130 140 150 160 170 180

I

T [°C]

150

200

250

300

350

400

VQ

SA

T[m

V]

10mA

15mA

20mA

0

50

100

-50 -30 -10 10 30 50 70 90 110 130 150

T [°C]

25mA


TLE4964-5M


Figure 31 Saturation voltage of the TLE4964-5M over output current

Figure 32 Effective noise of the TLE4964-5M thresholds over temperature

Figure 33 Output signal jitter of the TLE4964-5M over temperature

150

200

250

300

350

400V

QS

AT

[mV

] -40°C

25°C

150°C

0

50

100

8 10 12 14 16 18 20 22 24 26

IQ [mA]

60

70

80

90

100

110

120

Neff

[µT(

rms)

]

12V

20

30

40

50

-50 -30 -10 10 30 50 70 90 110 130 150

BN

T [°C]

0 3

0,4

0,5

0,6

0,7

0,8

t QJ

[µs(

rms)

]

12V

0

0,1

0,2

0,3

-50 -30 -10 10 30 50 70 90 110 130 150

t

T [°C]

Data Sheet 26 Revision 1.2 2019-12-20

TLE4964-5M

Revision history

7 Revision history

Revision Date ChangesRevision 1.2 2019-12-20 Updated text and figure in Chapter 2.6

Updated standards in Table 4Added maximum tested magnetic field in Chapter 3.3Editorial changes

Revision 1.0 2013-01-15 Initial release

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2019-12-20Published by Infineon Technologies AG81726 Munich, Germany

© 2019 Infineon Technologies AG.All Rights Reserved.

Do you have a question about any aspect of this document?Email: [email protected]

Document reference

Legal DisclaimerThe information given in this document shall inno event be regarded as a guarantee ofconditions or characteristics. With respect to anyexamples or hints given herein, any typicalvalues stated herein and/or any informationregarding the application of the device, InfineonTechnologies hereby disclaims any and allwarranties and liabilities of any kind, includingwithout limitation, warranties of non-infringement of intellectual property rights ofany third party.InformationFor further information on technology, deliveryterms and conditions and prices, please contactthe nearest Infineon Technologies Office(www.infineon.com).

WarningsDue to technical requirements, componentsmay contain dangerous substances. Forinformation on the types in question, pleasecontact the nearest Infineon TechnologiesOffice. Infineon Technologies components maybe used in life-support devices or systems onlywith the express written approval of InfineonTechnologies, if a failure of such componentscan reasonably be expected to cause the failureof that life-support device or system or to affectthe safety or effectiveness of that device orsystem. Life support devices or systems areintended to be implanted in the human body orto support and/or maintain and sustain and/orprotect human life. If they fail, it is reasonable toassume that the health of the user or otherpersons may be endangered.

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