ald precursor supply and demand for the semiconductor and ... · ald precursor supply and demand...

ALD Precursor Supply and Demand for the Semiconductor and Competing Industries

CMC 2017 Conference

Jonas Sundqvist, Ph.D.Fraunhofer IKTS Senior Scientist / TECHCET LLC Senior Technology Analyst

May [email protected]

http://www.techcet.com/

OutlineHigh-k Dielectrics for Memory & Logic

ALD Precursor Patent Filing

ALD/CVD for 3D-NAND

ALD Multiple Patterning

Dielectric Precursor Demand

High-k & metal precursor demand

Competing Markets

ALD Equipment Trends

Future [email protected]

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Disclaimer This presentation represents the interpretation and analysis of information

generally available to the public or released by responsible agencies or individuals. Data was obtained from sources considered reliable. However, accuracy or completeness is not guaranteed. This report contains information generated by Techcet by way of primary and secondary market research methods.

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High-k Dielectrics for Memory & Logic

2003 2004

2005

2007

2011


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HfO2, Al2O3

HfSiOx, TiN, TaNZrO2, TiAl, La2O3, …

Ta2O5 CVD

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ALD Precuror supplier IP filing


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IP Filing has been dominated by Air Liquide, Air Products, Entegris (ATMI), Adeka and MERCK (SAFC, Epichem)

BASF started high filing activity in 2013

2003 Air LiquideEntegris

2001 Air Products

2013 BASF

2000 MERCK

2008 Adeka

Dielectric Deposition IP Filing


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05001000150020002500300035004000

0%

20%

40%

60%

80%

100%

Num

ner o

f App

licat

ions

Rela

tive

Year

Dielectric & High-k IP Applications

CVD PECVD ALD SOD PVD Total Dielectric Deposition

Cooperative Patent Classification (CPC ) H01L21/02271 CVDH01L21/02274 PECVDH01L21/0228 ALDH01L21/02282 SODH01L21/02266 PVD

• Patent applications for dielectrics (including low-k, SiO2 & SiN)

• Two Growth cycles• ALD is growing on expense

of thermal CVD and Spin on Dielectrics

ALD

PECVD

Thermal CVD

Spin on Dielectrics

PVD

Dielectric Precursor IP Filing


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0%

20%

40%

60%

80%

100%

16-20 years 11-15 years 6-10 years 0-5 years

Age distribution of patent families

BDEASBTBASHCDSDIPAS3DMASi4MS3MSTSA

BDEAS has grown to have more emergent and young IP than medium and old IP due to its market penetration for PEALD SiO2 used since multiple patterning and some spacer and liner applications

BTBAS is involved in fewer and fewer new inventions filed during the development of todays leading edge technologies like multiple patterning.

Both HCDS and TSA have a revival in emergent IP filing which may be related to the NAND to 3DNAND transition (Dielectric multilayer stack).

29%

19%

15%

11%

6%

5%

5%

4%3% 2%

1%0% 0% 0%

0%Chemical Suppliers

Air LiquideAir ProductsBASFSumitomo Chemical CoEvonikDOW CorningWackerDOWATMIJSRAdekaDNFUpichemDenka CO ltdTOSOH

High-k Dielectrics IP Filing


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020040060080010001200

0%

20%

40%

60%

80%

100%19

9319

9419

9519

9619

9719

9819

9920

0020

0120

0220

0320

0420

0520

0620

0720

0820

0920

1020

1120

1220

1320

1420

1520

1620

17

High-k Historical IP Applications (PatBase)

Al2O3 TiO2 HfO2 ZrO2

REO STO, BST etc. Ta2O5 Total

0

200

400

600

800

1000

1200

0%10%20%30%40%50%60%70%80%90%

100%

1993

1994

1995

1996

1997

1998

1999

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

High-k Historical IP Applications (PatBase)

Al2O3 TiO2 HfO2 ZrO2 REO STO, BST etc. Ta2O5 Total

Hf

Al

Sr, Ba, PZT

Ti

Zr

Ta

Patent applications for High-k dielectrics only

Sr, Ba & PZT for super high-k and ferroelectric pervoskites is a dying field

Today main filing for Al, Ti, Hf, Zr and Ta based high-k

HfO2 is more interesting than ZrO2 due to more applications in Logic and memory

Rare Earth

ALD/CVD for 3D-NAND

PECVD for the Dielectric layer stack

PEALD for multiple patterning

TiN ALD barries & W ALD for word line & gate contacts

ALD for ONO (SiO2, SiNx) & blocking oxide (Al2O3)[email protected]

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0.00

5.00

10.00

15.00

20.00

25.00

2015 2016 2017 2018 2019 2020 2021

300m

m W

afer

Sta

rts

/ Mill

ion

Year

2D to 3D NAND Transition (TECHCET)

3D NAND G2

3D NAND G1

1x-z NV

2x-z NV2D 3D

ALD Multiple Patterning


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Otption A: 2X PEALD Spacer

Otption B: 2X PEALD Spacer

11 August 2016, SPIE Newsroom: Angélique Raley, Sophie Thibaut, Nihar Mohanty, Kal Subhadeep, Satoru Nakamura, Akiteru Ko, David O'Meara, Kandabara Tapily, Steve Consiglio, Peter Biolsi, TEL Technology Center, America, LLC Albany, NY

High-k & metal precursor demand


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Competing MarketsFlexible Enbcapsulation for AMOLED Display – ramping at Samsung Display, LG Display and Chinese manufacturers flexible encapsulation

MEMS – ALD is in HVM at Robert Bosch (200 mm)

Photovoltaic – in HVM for PERC Cell

Lithium Batteries – emerging market


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Photovoltaic


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For the last decade, screen-printed Al-back surface field cells (Al-BSF) have dominated the photovoltaic (PV) cell technology market

A transition to PERC cells using Al2O3 passivation is taking place

Al2O3 film by PECVD (Centrotherm, Manz, Meyer Burger, Semco, Singulus) or ALD using TMA as precursor and water, ozone or plasma activated oxygen as co reactant.

Due to the low cost product a lower spec. “solar grade” TMA is used and the ALD tools are either large batch furnaces (Beneq, NCD, Semco, Picosun) or Spatial ALD (Solaytech, Levitech).


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Photovoltaic

”TMA consumption is only about 2 to 3.3 mg per wafer for ALD tools, 9 to 10 mg for PECVD, while APCVD requires 15 mg per wafer to deposit a film with the required passivation quality”

Lithium batteriesCompetion for Cobalt (See Umicore presentation)

New Powder ALD Technologies for barriers are in Pilot Production


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22%

10%

29%

29%

10%

Break down of Lithium batteries by type

Lithium Iron Phosphate(LFP)

Lithium ManganeseOxide (LMO)

Lithium NickelManganese Cobalt Oxide(NMC)

Lithium Cobalt Oxide(LCO)

Lithium Nickel CobaltAluminium Oxide (NCA)

(Research in China 2015)ALD NanoSolutions we have completed modeling that indicates scaled up cost on the order of $1/kg to production. Currently offering batch or fully continuous scale up solutions

www.aldnanosolutions.com

Cobalt


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41%

16%

10%

7%

7%

6%

5%4% 4%

Global Cobalt Demand by Industry

Batteries

Super Alloys

Carbide/diamond drills

Steel

Catalysis

Colors

Magnets

Tires

Biotech

(Palisade 2016)

Cobalt is a technology enabling substance

energy storage systems catalytic processes enabling greater efficiencies in the operation of gas

turbines and chemical processes

important for the global green agenda basis of many established and new biotech applications

crucial for human health and diagnostics.

Cobalt is so important for industrial development that the EU has recognised that it is a ‘critical’ metal for the EU in its ”Raw Materials Initiative”

ALD Equipment Trends


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J A van Delft et al 2012 Semicond. Sci. Technol. 27 074002

Large Batch

Single Wafer Multi Wafer

Spatial ALD

Reactor Types

ALD OEM news 2016/2017


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• ALD Equipment market shrunk slightly 2016 due to reduction in cyclic DRAM spending

• ASM lost market shares to Jusung and Applied Materials• 1Q/2017 shows sign of recovery and return to growth• Investment in 10 nm and 3DNAND is strong• EUV insertion at 7nm may affect multiple patterning• ALD encapsulation is ramping in Korea and China Gen-6 AMOLED

Fabs• R&D Market was flat overall – Growth for Picosun• Veeco buying Ultratech Merging of two ALD business units in

2017?• Hitachi High-Technologies Joint development with Picosun

ALD OEM news 2016/2017


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87%

2% 6%

2% 3%

Semi 300mm

Non-Semi (MEMS,LED)

AMOLED

PV

R&D

Rank# OEM1 ASM International

2 Hitachi Kokusai

3 Tokyo Electron

4 Applied Materials

5 Jusung Engineering

7 Lam Research

8 Wonik IPS

9 Aixtron

10 Picosun

11 Beneq Oy

12 Ultratech

2016 ALD Equipment marketUSD 1.3 Billion

Future OutlookExpectected coninued growth in Si-precursors for Logic & Memory Patterning (SADP, SAQP) and 3DNAND (dielectric stack)

High-k is dominated by Zr and Hf dominate HKMG and many applications using Hf on the horizon (FRAM, RRAM)

Metal is dominated by W and Co is starting to grow now

Competing industries in HVM (MEMS, PV, AMOLED) are mainly consumiung Al (TMA)


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Thank you!www.TECHCET.com

ww.cmcfabs.org

[email protected]+1-480-382-8336, x 101

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