mos inverter: static characteristics

MOS Inverter: Static Characteristics

• The inverter is the most fundamental logic gate that performs a Boolean operation on a single input variable.

• Many basic principles employed in the design and analysis of MOS inverters can be directly applied to more complex circuits such as NAND, NOR and XOR, XNOR gates.

• The inverter operation is such that, for very low input voltage levels the output voltage Vout is equal to a high value VOH (output high voltage).

•In this case the nMOS device is in Cut-off and hence conducts no current.

•The pMOS is in linear region and acts as a resistor, the voltage drop across this resistor is very small in magnitude and the output voltage level is high.

•As Vin is increased the fall in the output voltage is not abrupt but gradual (refer to the inverter VTC curve) and has a finite slope.

•The two critical voltage points on the VTC are when the slope of the Vout(Vin) charateristic becomes –1.

MOS INVERTER

• The smaller input voltage satisfying dVout/dVin=-1 is called the input low voltage VIL and the larger input voltage satisfying this condition is called the input high voltage VIH.

• Both these voltages play significant roles in determining the Noise Margins of inverter circuits.

• As the input voltage is further increased, the output voltage continues to drop and reaches a value of VOL (output low voltage) when the input voltage is equal to VOH.

• We can now define the inverter threshold voltage as the point where Vin=Vout on the voltage transfer characteristic (VTC) curve.

• From this analysis of inverter operation we come up with five critical voltages, which characterize the behavior of the inverter circuit. These are VOL, VOH, VIL, VIH and Vth and are defined as follows:

– VOH: maximum output voltage; “1”.

– VOL: Minimum output voltage; “0”.

– VIL: Maximum input voltage which can be interpreted as a logic 0.

– VIH: Minimum input voltage which can be interpreted as a logic 1.

MOS INVERTER VTC & Ids

• Ids Vs Time

NOISE MARGIN

• Noise Margin is a parameter closely related to the input-output voltage characteristics.

• Noise Margin allows us to determine the allowable noise voltage on the input of a gate so that the output will not be affected.

• Noise Margin is usually defined in terms of Low Noise Margin (NML) and High Noise Margin (NMH).

• NML is the difference in magnitude between the maximum low output voltage of the driving gate and the maximum input low voltage recognized by the driven gate.

• NMH is the difference in magnitude between the minimum high output voltage of the driving gate and the minimum input high voltage recognized by the receiving gate.

• The ideal operating point with regard to NOISE MARGIN is to have the minimum High input voltage (VIH) be equal to the maximum Low input voltage (VIL).

IHVOH

VHNMOL

VILVLNM

NOISE MARGINS HIGH & LOW DEFINITIONS

• Shaded areas represent valid regions of the input and output voltages.

• With Idsn = Idsp =0, implying that n-type device is in saturation while p-device is in linear region we have that:

• If the pMOS transistor is turned off that is, the input voltage exceeds VDD + Vtp, with the nMOS device operating in linear region, but with Idsn=Idsp=0 then we have that:VIL

VIH

NML

NMH

VIN Vout

VOH

VOL

Transition Region

DDVOH

VoutV

0OL

VoutV

Noise Margins

• How much noise can a gate input see before it does not recognize the input?

IndeterminateRegion

NML

NMH

Input CharacteristicsOutput Characteristics

VOH

VDD

VOL

GND

VIH

VIL

Logical HighInput Range

Logical LowInput Range

Logical HighOutput Range

Logical LowOutput Range

Logic Levels

• To maximize noise margins, select logic levels at

– unity gain point of DC transfer characteristic

VDD

Vin

Vout

VOH

VDD

VOL

VIL VIHVtn

Unity Gain PointsSlope = -1

VDD-|Vtp|

p/n > 1

Vin Vout

0

Transient Response

• DC analysis tells us Vout if Vin is constant

• Transient analysis tells us Vout(t) if Vin(t) changes

– Requires solving differential equations

• Input is usually considered to be a step or ramp

– From 0 to VDD or vice versa

Inverter Step Response

• Ex: find step response of inverter driving load cap

0

0

( )

( )

( )

(

(

)

)

DD

DD

loa

d

ou

i

d

t

o

n

ut sn

V

V

u t t V

t t

V t

V

d

dt C

t

I t

0

2

2

0

2)

)

( ( )

( DD DD t

DD

out

outout out D t

n

t

ds

D

I V

t t

V V V V

V V V VV

t

V t V t

Vout(t)

Vin(t)

t0t

Vin(t) Vout(t)Cload

Idsn(t)

Delay Definitions

• tpdr: rising propagation delay

– From input to rising output crossing VDD/2

• tpdf: falling propagation delay

– From input to falling output crossing VDD/2

• tpd: average propagation delay

– tpd = (tpdr + tpdf)/2

• tr: rise time

– From output crossing 0.2 VDD to 0.8 VDD

• tf: fall time

– From output crossing 0.8 VDD to 0.2 VDD

Delay Definitions

• tcdr: rising contamination delay

– From input to rising output crossing VDD/2

• tcdf: falling contamination delay

– From input to falling output crossing VDD/2

• tcd: average contamination delay

– tpd = (tcdr + tcdf)/2

Simulated Inverter Delay

• Solving differential equations by hand is too hard

• SPICE simulator solves the equations numerically

– Uses more accurate I-V models too!

• But simulations take time to write

(V)

0.0

0.5

1.0

1.5

2.0

t(s)0.0 200p 400p 600p 800p 1n

tpdf = 66ps tpdr = 83psVin Vout

Delay Estimation

• We would like to be able to easily estimate delay– Not as accurate as simulation– But easier to ask “What if?”

• The step response usually looks like a 1st order RC response with a decaying exponential.

• Use RC delay models to estimate delay– C = total capacitance on output node– Use effective resistance R– So that tpd = RC

• Characterize transistors by finding their effective R– Depends on average current as gate switches

RC Delay Models

• Use equivalent circuits for MOS transistors

– Ideal switch + capacitance and ON resistance

– Unit nMOS has resistance R, capacitance C

– Unit pMOS has resistance 2R, capacitance C

• Capacitance proportional to width

• Resistance inversely proportional to width

kg

s

d

g

s

d

kCkC

kCR/k

kg

s

d

g

s

d

kC

kC

kC

2R/k

Example: 3-input NAND

• Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

Example: 3-input NAND

• Sketch a 3-input NAND with transistor widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

3

3

222

3

3-input NAND Caps

• Annotate the 3-input NAND gate with gate and diffusion capacitance.

2 2 2

3

3

33C

3C

3C

3C

2C

2C

2C

2C

2C

2C

3C

3C

3C

2C 2C 2C

3-input NAND Caps

• Annotate the 3-input NAND gate with gate and diffusion capacitance.

9C

3C

3C3

3

3

222

5C

5C

5C

Elmore Delay• ON transistors look like resistors

• Pullup or pulldown network modeled as RC ladder

• Elmore delay of RC ladder

R1 R2 R3 RN

C1 C2 C3 CN

nodes

1 1 1 2 2 1 2... ...

pd i to source ii

N N

t R C

R C R R C R R R C

Example: 2-input NAND

• Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies6C

2C2

2

22

4hC

B

Ax

Y

R

(6+4h)CY 6 4pdrt h RC

Example: 2-input NAND

• Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies

6C

2C2

2

22

4hC

B

Ax

Y

Example: 2-input NAND

• Estimate rising and falling propagation delays of a 2-input NAND driving h identical gates.

h copies6C

2C2

2

22

4hC

B

Ax

Y

2 2 22 6 4

7 4

R R Rpdft C h C

h RC

(6+4h)C2CR/2

R/2x Y

Delay Components

• Delay has two parts– Parasitic delay

• 6 or 7 RC

• Independent of load – Effort delay

• 4h RC

• Proportional to load capacitance

Contamination Delay

• Best-case (contamination) delay can be substantially less than propagation delay.

• Ex: If both inputs fall simultaneously

6C

2C2

2

22

4hC

B

Ax

Y

R

(6+4h)CYR

3 2cdrt h RC

7C

3C

3C3

3

3

222

3C

2C2C

3C3C

IsolatedContactedDiffusionMerged

UncontactedDiffusion

SharedContactedDiffusion

Diffusion Capacitance

• we assumed contacted diffusion on every s / d.

• Good layout minimizes diffusion area

• Ex: NAND3 layout shares one diffusion contact– Reduces output capacitance by 2C

– Merged uncontacted diffusion might help too

Layout Comparison

• Which layout is better?

AVDD

GND

B

Y

AVDD

GND

B

Y