application of diamond sensors at flash
DESCRIPTION
Application of Diamond Sensors at FLASH. M.-E. Castro- Carballo , H. Henschel , A. Ignatenko , W. Lange, O. Novgorodova , W. Lohmann , R. Schmidt, S. Schuwalow. DESY, Zeuthen June 29, 2009. Overview. FLASH overview Motivation for BHM placement BHM Outlook Sensors Test at PITZ - PowerPoint PPT PresentationTRANSCRIPT
Application of Diamond Sensors Application of Diamond Sensors at FLASHat FLASH
M.-E. Castro-Carballo, H. Henschel, M.-E. Castro-Carballo, H. Henschel, A. IgnatenkoA. Ignatenko, W. , W. Lange, O. Novgorodova, W. Lohmann, R. Schmidt, S. Lange, O. Novgorodova, W. Lohmann, R. Schmidt, S.
SchuwalowSchuwalow
DESY, Zeuthen
June 29, 2009
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OverviewOverview
FLASH overviewFLASH overviewMotivation for BHM placementMotivation for BHM placementBHMBHM
Outlook Outlook SensorsSensors
Test at PITZTest at PITZResultsResults
SummarySummary
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FLASH overviewFLASH overview
1GeV maximum electron beam energy
Wavelength down to 6.5 nm10 fs pulses
Peak current 1-2 kA
High-gain Free Electron LaserVUV and soft X-ray regime
Self-Amplified Spontaneous Emission (SASE) mode
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Motivation for BHM placementMotivation for BHM placement
BPM9Stripline
BPM15Button
WINDOW withTi-chamber SWEEPER
RD13 (HSK)QUAD
Q10 (QC)QUAD
Q11 (QC)
Chamber withpump port & bellow
DUMP
Dump Vacuum Section
2879mm 2879mm
STEERER, H7 to bend plane (CV)
DIPOLE + TrimD6 (TDC)
FLASH beam dump line
Vacuum leak
New beam position diagnostic tools are needed
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55
OutlookOutlook
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Beam Halo MonitorBeam Halo Monitor
Electron beam pipe
BHM sensors
Air BPM
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SensorsSensors
1. pCVD diamond produced by Diamond Detectors Ltd. Dimensions 10×10×0.3 mm3
Metallization: 50/50/200 nm Ti/Pt/Au
2. Single crystal sapphire (Al2O3) produced by CRYSTAL GmbH Dimensions 10×10×0.3 mm3
Metallization: 50/50/200 nm Al/Ti/Au
The sensors will be operated like solid-state ionization chambers
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Test at PITZTest at PITZ pCVD diamond Dimensions 12×12×0.5 mm3
Metallization: 10×10 mm2 Ti/Pt/Au
WS2
0.5 m
3 m 25 m
45 m
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Plan of measurements
1. Electromagnetic Impact (EMI) investigation
Sensor without bias. Scan over different bunch charges at parking position; x-position scans at certain bunch intensity.
2. Signal size measurements
Biased sensor in the beam center. Measurements of the signal size over bunch intensity at different bias voltages. Scans of the beam profile (focused and unfocused beam).
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No bias, parking position No bias, x=-5mm
100V bias voltage, parking positionBunch charge 100pC
ResultsResults
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Beam profile on High2scr1
Imain=295A Imain=345A
xRMS=0.93 mmyRMS=1.30 mm
xRMS=3.36 mmyRMS=3.29 mm
appr. position and dimensions of the diamond sensor
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Imain=295A Imain=345A
Signal from the diamond sensor
Bunch train trigger
Signal
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1313
Expected charge produced in diamond by 10 pC beam
~ 230 nC
1 a.u. ~ 1 nC
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Summary
1. Tests with 1 pCVD diamond sensor were carried out at PITZ (Photo Injector Test facility Zeuthen).
2. The diamond was operated in the bunch charge range 1 pC to 1 nC
3. Clear dependence of the signal on the bunch charge was observed
4. Beam profiles for defocused and focused beam were measured
5. EMI signals for unbiased sensor were small in comparison with the signals from biased sensor
6. 4 pCVD diamonds and 4 artificial sapphires will be operated in real accelerator conditions at FLASH