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Datasheet Ver. BEF Page 1 of 14 Established: 2012-11-21 Revised: 2013-05-30 Applications ■ WCDMA handset ■ HSDPA ■ HSUPA ■ LTE Type ■ Hybrid Integrated Circuit Features ■ High efficiency operation 45% @ 28.5dBm ■ Small, low profile LGA package 3mm x 3mm x 0.85mm (1mm Max) ■ Low Voltage Positive Bias Supply (3.2V to 4.35V) ■ 2-Mode Power States with Digital Control Interface ■ Optimized for DC/DC converter operation ■ Integrated Power Coupler ■ Integrated Blocking capacitors UMTS Band 8 Power Amplifier IC (880MHz to 915MHz) UN06B08 Vcc1 RF in Vmode NC Ven Vcc2 RF out CP in GND CP out 1 5 4 3 2 6 7 8 9 Bias Circuit 10

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Datasheet

Ver. BEF Page 1 of 14 Established: 2012-11-21 Revised: 2013-05-30

Applications WCDMA handset HSDPA HSUPA LTE

Type Hybrid Integrated Circuit

Features High efficiency operation 45% @ 28.5dBm Small, low profile LGA package 3mm x 3mm x 0.85mm (1mm Max) Low Voltage Positive Bias Supply (3.2V to 4.35V) 2-Mode Power States with Digital Control Interface Optimized for DC/DC converter operation Integrated Power Coupler Integrated Blocking capacitors

UMTS Band 8 Power Amplifier IC(880MHz to 915MHz)

UN06B08

Vcc1

RF in

Vmode

NC

Ven

Vcc2

RF out

CP in

GND

CP out

1

5

4

3

2

6

7

8

9

BiasCircuit

10

Datasheet

Ver. BEF Page 2 of 14 Established: 2012-11-21 Revised: 2013-05-30

Pin AssignmentPin No. Pin Name

TOP VIEW1 Vcc1

2 RF in

3 NC

4 Vmode

5 Ven

6 CP out

7 GND

8 CP in

9 RF out

10 Vcc2

11 GND

Recommended Circuit

C1 :1000pF to 0.1uF (Set up C1 from the terminal Vcc1 to the distance within 1mm.)C2 :1000pF to 0.1uF (Set up C2 from the terminal Vcc2 to the distance within 1mm.)C3 :1uF to 4.7uF (Set up C3 from the terminal Vcc2 to the distance within 30mm.)R1 : 50 ohm

Note :Pin No.11 shows the central terminal at thebottom package.

1

2

3

4

5

10

9

8

7

611

3

4

5

10

9

8

7

6

1

2

Vcc1

RF in

Vmode

Ven

Vcc2

RF out

CP in

CP out

C11000pF

C34.7uF

C21000pF

R150 ohm

11

Datasheet

Ver. BEF Page 3 of 14 Established: 2012-11-21 Revised: 2013-05-30

Low Low

LTEPmax

High-power mode(HPM) High Low ≤

Parameter Ven Vmode HSPA

85

0.5Mode Control Voltage

Low 0

High

UMTS / LTE -30Ambient Temperature

Rel99

1.35

0.5V

V1.8 3.1

Enable VoltageLow 0

High 1.35 1.8 3.1

Supply Voltage 2 0.4 3.4 4.35 V

915 MHz

Supply Voltage 1 3.2 3.4 4.35 V

Operating Frequency 880

Typ NotesParameter Condit ion Symbol Min Max Unit

Storage temperature Tstg -35 to +150

Input RF power Pin 10 dBm

1,2

1,3

1

1

Supply voltage Vcc1,2 6 V

Control voltage Ven,Vmode 4.2 V

14

-

15

-

-

14≤ ≤Low-power mode(LPM) High High

Shut down mode

27.25 ≤ 27.2528.5 ≤

SymbolParameter Rating Unit Notes

Absolute Maximum Ratings

Operating Ranges

Modes of operation

f

Vcc1

Vcc2

Ven

Vmode

Ta

Datasheet

Ver. BEF Page 4 of 14 Established: 2012-11-21 Revised: 2013-05-30

Vcc1=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz Signal Condition:Rel99 Pmax: refer to Page.4.

Vcc1=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz Signal Condition:HSPA

Electrical performance-1

4

4

mA

dBc

µA

mA

4

Symbol UnitParameter

Max

11.0

40LPM, Pout=15Bm,Vcc2=1.1V

Condition Min Typ Max

466 540100 mA

HPM, Pout=28.5dBm,Vcc2=3.4V

5MHz offset

125

-41

3045

HPM, Pout=28.5dBm,Vcc2=3.4V

25.0

-36

-41

1.3:1

dBc

dBc

dBc

Unit

3rd harmonic and higher

Leakage Current

ACLR2

HPM:Vcc2=3.4V,LPM:Vcc2=1.14VACLR3

5MHz offset

Ioff

HPM, Pout=Pmax

Vcc=3.4V, Pin=off,Ven=0V

30

-57 -46

28

mA

-36

dBc

-33

0.1

-46

dBc

HPM, Pout=Pmax

HPM, Pout=Pmax

0.1

Parameter

Adjacent channelleakage power ratio3

Adjacent channelleakage power ratio4

10

Typ

5

Min

Electrical performance-2

Input impedance VSWR ρIN

Notes

dB27.516.5Gain

HPM, Pout=28.5dBm,Vcc2=3.4V

LPM_Pout=-30dBm,Vcc2=0.4VTotal Supply Current Ict

G LPM, Pout=15Bm,Vcc2=1.1V

Vcc2=0.5V, Pin=off,Ven=1.8V

Condition

Imode

Symbol

Vmode=1.8V Iidle

3f0

Mode control current

Adjacent channelleakage power ratio1

Adjacent channelleakage power ratio2

2f0

Quiescent current

Enable current Ien

2nd harmonic

ACLR1

Notes

4-36

-37

2.5:1

LPM_Pout=-30dBm,Vcc2=0.4V

HPM, Pout=28.5dBm,Vcc2=3.4V

LPM_Pout=-30dBm,Vcc2=0.4VLPM, Pout=15Bm,Vcc2=1.1V

10MHz offset

LPM, Pout=15Bm,Vcc2=1.1V

-41

-57Pout = Pmax-MPRHPM:Vcc2=3.4V,LPM:Vcc2=1.14V

10MHz offset

Pout = Pmax-MPR

ACLR4

%LPM, Pout=15Bm,Vcc2=1.1VPower Added Efficiency PAEHPM, Pout=28.5dBm,Vcc2=3.4V 38

22

Datasheet

Ver. BEF Page 5 of 14 Established: 2012-11-21 Revised: 2013-05-30

Vcc1=Vcc2=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz Signal Condition:LTE

Vcc1=Vcc2=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz

Vcc1=Vcc2=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz

f=880 to 915MHz

Electrical performance-4

19 21

-134-137 dBm/Hz

dBm/Hz-133

-70

Unit

-135ISM noise NP3

NP1

all phase

4,5

Max

8:1

Min

dBc

Pout ≤ Pmax

Pout ≤ Pmax

-33HPM:Vcc2=3.4V,LPM:Vcc2=1.14V

E-UTRA_ACLR

-135

Pout ≤ Pmax

45 MHz offset from Tx

NotesTyp Max Unit

dBc

Notes

dBcHPM:Vcc2=3.4V,LPM:Vcc2=1.14V

4,5

Electrical performance-3

dBc 4,5

-39

-36-40

Condition

Pout = Pmax-MPR

UTRA_ACLR1

HPM:Vcc2=3.4V,LPM:Vcc2=1.14V

-38

Min

-47

Coupler factor 20

-142

dB

dBm/Hz

CF

Pout ≤ Pmax2400 to 2483.5 MHz

GPS noise NP2

NotesTyp Unit

Electrical performance-6

Min

1574 to 1577 MHz

Max

698 to 2620 MHz,

stabil ity, spurious levels SVSWR ≤ 5:1, all phasePout ≤ Pmax

Daisy-chain insertion loss dBCPL_IN to CPL_OUT ports,

Enable = low0.250.1

Min Typ Max Unit Notes

Ruggedness R

ACLR6

Adjacent channelleakage power ratio7

ACLR7

ACLR5

Parameter Symbol

UTRA_ACLR2

Pout = Pmax-MPR

TypCondition

Parameter Symbol Condition

Pout = Pmax-MPRAdjacent channelleakage power ratio5

RX noise

Parameter

Adjacent channelleakage power ratio6

Parameter Symbol Condition

DCil

Symbol

Electrical performance-5

Datasheet

Ver. BEF Page 6 of 14 Established: 2012-11-21 Revised: 2013-05-30

Vcc1=3.4V, Ven=1.8V, Ta=-30 to +85 , ZS=ZL=50Ωf=880 to 915MHz

Vcc1=Vcc2=3.4V, Ven=1.8V, Ta=-30 to +85 , ZS=ZL=50Ωf=880 to 915MHz

Vcc=3.4V, Ven=1.8V, Ta=+25, ZS=ZL=50Ωf=880 to 915MHz

Notes

Electrical performance-7

Notes

-10Phase discontinuity variation Pdv

HPM:Vcc2=3.4V,LPM:Vcc2=1.14V-31 dBc

Signal Condit ion:Rel99, HSPAParameter Symbol Condition Min Notes

dBc 4

Max UnitMin

Unit

Signal Condition:Rel99

MaxTyp

E-UTRA_ACLR

Typ

4,5Pout = Pmax-MPR-0.3dBACLR

10

Pout = Pmax-MPR-0.3dB

Electrical performance-9

10

Parameter Symbol Condition

Part to part variation deg

Adjacent channelleakage power ratio10

Adjacent channelleakage power ratio11

UTRA_ACLR1

HPM:Vcc2=3.4V,LPM:Vcc2=1.14VPout = Pmax-MPR-0.3dB

Notes

4,5

-37 dBc 4,5

-34 dBc

HPM:Vcc2=3.4V,LPM:Vcc2=1.1V

Adjacent channelleakage power ratio8 ACLR8

5MHz offsetPout = Pmax-MPR-0.3dB

Adjacent channelleakage power ratio9 ACLR9

10MHz offset

Condition Min

ACLR11

-34

Typ Max

Electrical performance-8

Unit

dBc

Adjacent channelleakage power ratio12

UTRA_ACLR2ACLR12 HPM:Vcc2=3.4V,LPM:Vcc2=1.14V

4Pout = Pmax-MPR-0.3dBHPM:Vcc2=3.4V,LPM:Vcc2=1.1V

-46

Signal Condition:LTEParameter Symbol

1: The backside ground of the package should be soldered to cellular phone P.C.B.2: Ven=0V3: Vcc1=Vcc2=3.4V, Ven=2.9V, Vmode=0V, RL=50Ω4: RF measurements shall be made with 3GPP TS25.101 (UTRA/FDD UE) and TS36.101 (LTE) specif ication compliant waveforms. a. MPR is the maximum power reduction, as defined by the 3GPP specifications. In case of using waveforms with a higher peak-to-average ratio, MPR shall be applied. (ranging from 0 to 2.5 dB) b. The worst-case MPR = 0 dB waveforms across the 3GPP specif ications are required to meet a 1.25 dB lower maximum power than 3GPP TS25.101 Rel99 case.5: The LTE ACLR test is as defined in TS36.101, Section 6.6.2.3. a. The minimum requirement of E-UTRAACLR is defined in Section 6.6.2.3.1. b. The minimum requirement of UTRAACLR is defined in Section 6.6.2.3.2.

Datasheet

Ver. BEF Page 7 of 14 Established: 2012-11-21 Revised: 2013-05-30

Vcc [V] (HPM , LPM)

-20 0.47 0.47-15 0.48 0.48-10 0.50 0.50-5 0.52 0.540 0.57 0.601 0.59 0.612 0.60 0.633 0.62 0.654

2726

0.64 0.67

28.2528

Pout[dBm]

22 1.89 2.16

3.323.01 3.402.73 3.16

24 2.26 2.61

3.4028.5 3.40

2.49 2.87

23 2.07 2.37

21 1.74 1.98

1.47 1.6720 1.60 1.81

1.4218 1.36 1.54

1.0614 1.03 1.14

1.3115 1.10 1.22

12 0.91

25

13 0.97

16 1.1817 1.27

19

HSPA / LTER99

0.82 0.8911 0.86 0.94

0.809 0.78 0.84

0.70

0.76

5

8 0.75

Look-up Table for Vcc Optimization

0.73

1.00

0.666 0.697 0.71

10

Datasheet

Ver. BEF Page 8 of 14 Established: 2012-11-21 Revised: 2013-05-30

(1) Pin No.1

(2) Product Name

(3) Lot No.

A: 1 to 9, A to Z and the top and bottom bar are jointly used. (However, neither I, O nor Q are used)B: A to Z are jointly used. (However, neither I, O nor Q are used)

(4)Product YearProduct year is shown by an upper and lower bar.

It uses after 2016 repeatedly from the Upper and lower bar.

Marking

XX : XX shows UN06B01

AB without bar 2014

AB Upper bar 2013

XX

year2012

barUpper and lower bar

A B

AB Lower bar 2015

AB

A B(1) (3)(4)

(4)

(2)

Datasheet

Ver. BEF Page 9 of 14 Established: 2012-11-21 Revised: 2013-05-30

Terminal Finish Method : Electroless Au plating

Outline Drawing

Substrate Material : Halogen Free Organic Substrate

Body Material : Epoxy Resin

PAMP09-N2

Unit:mm

Datasheet

Ver. BEF Page 10 of 14 Established: 2012-11-21 Revised: 2013-05-30

Recommended land patternPackage and PCB Metal mask of solder

0.35

0.35

2.80

0.60

0.60

0.60

0.60

1.50

2.10

C0.30 0.35

0.35

2.60

0.60

0.60

0.60

0.60

1.30

2.10

C0.25

0.75

0.80

0.75

Datasheet

Ver. BEF Page 11 of 14 Established: 2012-11-21 Revised: 2013-05-30

1) Taping form

2) Reel form

Reel, Carrier Tape and Covered Tape is antistatic treatment.The lack of the product is not permitted.

Packing figure

リール/Reel キャリアテープ/Carrier tape

カバーテープ/Cover tape

ラベル/Label

LabelEIAJ C-3

Label工程管理用

ラベル/Label

Datasheet

Ver. BEF Page 12 of 14 Established: 2012-11-21 Revised: 2013-05-30

Note1 : Specified temperature is package surface temperature.Note2 : N2 reflow is available.Note3 : Available solder is Sn-3.0Ag-0.5Cu.

Fig2 Solder heat resistance line

Cooling time T2 Over 2minutes. (natural neglect in normal temperature)Reflow soldering times 2 times

Cooling time T2 Over 2minutes. (natural neglect in normal temperature)

Fig1 Solder wettability line

Heating time tp Below 10sec.(over 230)Storage time in high temp tw Over 30sec.(over 220)

Pre-heating temp T1 160 to 180, 1 to 2 minutesPeak temp Tp Below 235

Storage time in high temp tw 30 to 70sec.(over 225)

Pre-heating temp T1 150 to 190, 1 to 3 minutesPeak temp Tp Below 260Heating time

In reflow soldering process, exact temperature-cycle management is essential. Werecommend pre-heating before soldering, so that you can prevent not only packagedamages or stains but also damages on a printed circuit board, and your processbecomes stable.

The following shows our recommended reflow temperature profile.

tp Below 10sec.(over 255)

Recommended reflow temperature profile in lead-free soldering

()235

220

200

150

100

Tp

T1T2tw

tp

()260

225

200

150

100

Tp

T1

T2tw

tp

Datasheet

Ver. BEF Page 13 of 14 Established: 2012-11-21 Revised: 2013-05-30

1 Please, be fully careful of sudden heat, rapid cooling, and local heating, because this productis made by the resin board and the epoxy resin on structure. Please don't use the productdropped from higher place, because there is a risk of damage about the resin used in lowelastic modulus by fall, a shock and so on.

2

3

Please, don't touch Au plating area of product by bare hand, and don't hurt, because Au isplated on the product electrode as exterior plating.

You must finish mount and reflow soldering within seven days after opening the dry pack inorder to prevent exposure of moisture. Please keep the product at the atmosphere of thetemperature from 5 to 30 and the humidity from 30%RH to 70%RH. Please keep theproduct in stable place of temperature and humidity without corrosive gas. I f you keep product inthat stable place, you may mount and reflow soldering in three months.

4 Please prevent product from an excessive stress when you mount to a print board, Moreover,please avoid the mechanical chucking of a product.

5 Although it is impossible to use the strong acid as the solder flux, it is possible to use the oneof a rosin material. The method of reflow soldering is our recommendation. Please refer atemperature profile of reflow soldering as shown in Fig. 1 at the page 15 of this document. Inaddition, please refer a recommendation of land pattern as shown in the figure of the page 13of this document.

6 Please don’t carry out washing using a solvent after reflow soldering. also by ultrasonic wavecleaning.

7 Please be careful not to expose product static electricity, serge, etc.

Notes on handling

Datasheet

Ver. BEF Page 14 of 14 Established: 2012-11-21 Revised: 2013-05-30

1. Adaptation In order to realize stable soldering, We ship this product with dry packing. Please take carewith the following point, when you use dry packed products.

2. The storage conditions of a productBe careful enough of storage environment irrespective of opening or un-opening. Theproduct storage should avoid getting wet, corrosive gas, and f ire.

In order to avoid the moisture absorption to a product, after opening dry packing should f inishmounting and reflow soldering altogether within regulation time.

3. Handling after opening dry packing

4. Low-temperature baking conditionsPlease carry out product re-dryness in the taping state on the following conditions.

Handling of dry packed products

[Recommended storage environment] Temperature : 5 to 30 Humidity : 30 to 70%RH Period : Less than 1 year (Within 1 year after the manufacture date code of C3 label)

[The period which can be after opening dry packing] Period : 7 + 7 days In the case of storage in recommended storage environment

<Attention>Packing specif ication of this product is taping.Taping material is not heat-resistant materials.Therefore, you must f inish mount and reflow soldering within regulation time.Unavoidably If you can’t finish within regulation time, you must bake the products bylow-temperature baking conditions.

[Low-temperature baking conditions] Temperature : 40±5 Humidity : Less than 25%RH Time : 192 hours Number of times : 1 time

Request for your special attention and precautions in using the technical information andsemiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

Caution for Safety

DANGER¢ This product contains Gallium Arsenide (GaAs).

GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage.

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