flcc seminar 1/29/07 arn 1 flcc kickoff seminar january 29,...

FLCC Seminar 1/29/07 ARN1

Copyright 2007, Regents of University of California

FLCC Kickoff SeminarJanuary 29, 2007Andy Neureuther

Tribute to Richard NewtonSeminar/Workshop Schedule for SpringYear 4 Proposal Status: Approval, ODP Opportunity, Last Call on Masks and Si WafersBusiness Climate Changes

Can We Deliver Benefits?Optical Digital Profilometry and OpportunitiesTrends in DFM and Simulation



Tribute to Richard Newton

Generated the Philosophy on which FLCC Operates

Research Leader: SPICE, CAD, GSRCAcademic Leader: EECS Chair, College DeanVisionary Collaborator: Internal and External

CITRIS BuildingCommonwealth Club Speech Sep. 9, 2006 http://flcc.berkeley.edu/newton_CommClub_9-21-06.pdf



The Industry Team

17 Supporters2 Contributors3 Former

SVTC



The Faculty Team

Jane Chang ChE UCLA Plasma mechanisms and feature modelingCheung, Nathan EECS UCB Plasma modeling, diagnostics, surface interactionsDornfeld, David ME UCB Chemical-Mechanical PlanarizationDoyle, Fiona MatSci UCB Chemical-Mechanical PlanarizationKomvopoulos, K. MatSci UCB Chemical-Mechanical PolishingGraves, David ChE UCB Plasma modeling, diagnostics, surface interactionsHaller, Eugene MatSci UCB Dopant and Self-Diffusion in Si and SiGe AlloysKing, Tsu-Jae EECS UCB Novel Electron DevicesLieberman, Michael EECS UCB RF sources and E&M plasma modelingNeureuther, Andrew EECS UCB Pattern Transfer Modeling/SimulationPoolla, Kameshwar ME UCB AEC/APC and MetrologySpanos, Costas EECS UCB IC Process Metrology, Diagnosis and ControlTalbot, Jan CE UCSD Chemical-Mechanical Planarization



The Student TeamCAMPUS STUDENT AREA ADVISOR

Berkeley Jeffrey Hartnett CMP Dornfeld

Berkeley Shantanu Tripathi CMP Doyle

Berkeley Huaming Xu CMP Komvopoulos

Berkeley Chaohao Wang (UG) Sensors & Control Spanos

Berkeley Vorrada Loryuenyong Process Integration Cheung

Berkeley Marshal Miller Lithography Neureuther

Berkeley Jing Xue Sensors & Control Spanos

Berkeley Emi Kawamura (Post Doc) Plasma Technology Lieberman

Berkeley Qun Kian Sensors & Control Spanos/Poolla

Berkeley John Gerling Process Integration Cheung

Berkeley Christopher Liao Process Integration Haller

Berkeley Xin Sun Process Integration King

Berkeley Juliet Holwill Lithography Neureuther

Berkeley Eric Chin / Lynn Wang Lithography Neureuther

Berkeley Kedar Patel Sensors & Control Spanos

San Diego Robin Ihnfeldt CMP Talbot

Los Angeles John Hoang Plasma Technology Chang

Berkeley Alan Wu Plasma Technology Lieberman

Berkeley (Mark Nierode) Plasma Technology Graves

Berkeley Insook Lee (Post Doc) Plasma Technology Graves

Jason Cain PhD, Tanuja Gopal PhD, Edward Hwang PhD, Mark Nierode M.S., Garth Robins, PhD, Hugh Silvestri PhD and 2 UG Joe Chien and Hideaki Oshima



The Staff TeamPrincipal InvestigatorAndrew Neureuther510 Cory Hall, ERLphone: (510) 642-4590fax: (510) [email protected]

System SupportChangrui Yin550 Cory Hall,phone: (510) 643-7542fax: (510) [email protected]

Contract ManagementFarah Pranawahadi545D Cory Hall, ERLphone: (510) 643-9705fax: (510) [email protected]

Administrative SupportCharlotte Jones558 Cory Hall, ERLphone: (510) 642-1818fax: (510) [email protected]

Teleconference1-888-446-3559code: 510-643-2834

http://flcc.berkeley.eduAccess restricted by password



FLCC Operational Plan Sp 06Date Time Activity Speaker

Jan 23 M, 2-3PM Kick-Off Neureuther

Feb 12 M, 2-3 PM Seminar

Feb 26 M, 2-3 PM Seminar

Mar 12 M, 2-3 PM Seminar

Mar 20 M, 2-3 PM Seminar

Apr 4(Alt. 11 MRS)

W, 1-6 PMSite TBA SV

Workshop All

Apr 16 Seminar

Apr 30 Seminar



Reading of Key Papers: M 2PM Wang Room Start 2/5

General LithographyVan den Brink, ASML BACUS 06

Double Patterning:Arnold/Dusa IEEE; Other

Mask Edge EffectsProgler SPIE06; att-PSM Yoshizawa Photomask Japan best paper; ALT-PSM Gleason BACUS 06;

Focus EffectsBrunner SPIE 06;

Illumination EffectsDusa SPIE 06

Litho: AndyDevice: Tsu-Jae KingCMP: Dave DornfeldEtching: Jane Chang



FLCC Year 4 Proposal Starts Feb 1

Approved and Funded as Written; goes to Jan 31, 2008Required to file alternative research plan just in case part of the photomask donations do not materializeSince approved Cypress semiconductor has had to drop out as the process development group for 65 nm was dissolved.Thanks to Bert Bruggeman of the Silicon Valley Technology Center and Mircea Dusa of ASML we will be able to conduct silicon wafer processing experimentsThe Silicon Valley Technology Center will also participate as a regular FLCC Participating Company.



Special Opportunity: Optical Digital Profilometry

TEL/Timbre plans to donate ODP System to UC BerkeleyODP TeraGen 2048 system including

TeraGen Server Farm (8 servers) Aether Station for ODP modeling

This library generation and searching capability will be fed data from our Sopra Ellipsometer

The data taking will be slow but the science will be greatKey is flexibility: transmission, goniometer for diffracted orders

ODP System to be used for:Development of advanced applications of scatterometryGeneral CD and profilometry measurements to support UC Berkeley research

Intellectual Property Considerations on Tool modification and software off-limits



Last Call on Silicon and Photomasksfor FLCC 4 Year Vision

Final Year Multi-Student Contributions of test structure for supporting Berkeley lab experiments, testing on production processing equipment, and wafer processDevice variabilityOptical Digital ProfilometryPSM as Precision InstrumentsPattern MatchingCMP ModelingEtch ModelingStressOther collaboratorsOther low hanging fruit for FLCC

SCHEDULEFeb 2 email requestFeb 9 plan draft & dialogFeb 16 finalize requests to SVTC, Toppan and Photronics



FLCC Adapt to Business Conditions“Companies won’t be the big paternal parent

anymore”

“The new model is to stay lean and contract out for everything, find specialists who are really good at one thing and pay them a lot of money to do it. It’s happening throughout Silicon Valley”

Russell Hancock, of Joint Venture: Silicon Valley Network in discussing their 2007 Silicon Valley Index. SF Chronicle 1/28



FLCC Adapt to Business Conditions (Cont.)

Industry is extremely focused on the job that they have to do and to be successful in University Research we have to deliver mutual benefits to their job related current needs. Rapid Changes: Even at the Corporate Level

AMD => Spun off SpansionKLA-Tencor bought BrionTI announces going fabless < 45 nmCypress likely go fabless for 65 nm => Created Silicon Valley Technology Center as an independent company

FLCC ChangesFaculty/Students collaborations adapt to be relevant to these changesKeep sanity by investing long term in relationships with technologists and identify overarching industry needs



IP Gordian KnotIntellectual Property is a major concern for teaming in research

with industry.FLCC Companies like working on pre-competitive ideas on an industry wide basis.Students are encouraged to invent and broaden their experience by make Invention Disclosures, working with Lawyers on filing patents.We had success,

received a patent, university gave an option on an exclusive license to a 3rd party, 3rd party does not do business with our collaborator, and ccollaborator believes that they have subsidized their competitor!

SolutionsLook at IP way up-frontParticipating Companies participate in cost of patent applicationInclude patent application costs in budget and give non-exclusive license



Concept of ODP1) ODP employs spectroscopic ellipsometry to measure intensity and phase of the 0th order diffraction at a fixed incident angle in wavelength from deep UV to infrared

Fig2. Specular spectroscopic scatterometryfor 1D grating [2];

Fig 3. a simple grating structure forevaluating scatterometry [2]

The ratio of the 0th-order complex TE and TM reflectivity is measured;The real part of the phase difference is used for the analysis



Concept of ODP (cont.)2) A Rigorous Coupled-Wave Analysis (RCWA) grating simulator

(gtk) implemented- Periodic structures

3) A library of spectral responses created- The profiles obtained by a random profile generator, e.g. Monte Carlo method- Profile information: rounding, footing, T-topping, material thickness

variation, wide range of sidewall angles, as well as CD4) Generated profiles used as inputs to the RCWA simulator to

generate the simulated diffraction responses [3]. The diffraction results in the form of are calculated over a range of wavelengths

5) The diffraction responses measured from in situ/in-line specularspectroscopic scatterometry are measured and compared with those in the library



Concept of ODP (cont.)

Fig 4. A library-based methodology for CD profile extraction [2]



Applications of ODP (cont.)• Example II: shallow trench isolation structure

ODP measured shallow trench isolation structure profile afteretch and clean as compared to cross-sectional SEM of the samegrating structure [1]



Advantages of ODPI. ODP extendable beyond 70nm nodes by using conventional

spectroscopic ellipsometry (no additional hardware needed)- CD-SEM become bottleneck in CD measurement under 100nm

Fig 1. Grating measurement using spectroscopicellipsometer. A unique set of tanψ and cos∆spectra corresponds to a specific geometry(CD, pitch, profile, film thickness) combination of device structure

II.ODP generate digital cross-sectional information in real time; It provides non-destructive metrology for device profiles- CD-SEM cannot extract thickness and topographic information- SEM, AFM destructive, very expensive; AFM very slow



EM Topography Effects

Build on work of Kostas Adam on photomasksand Dan Ceperely on pupil plane masks Marshal Miller

ALT-PSM and ATT-PSM Edge Effects and Cross-TalkUse TEMPEST time-evolution to visualize edge effects and cross-talk as they occur among masks openingsIntroduced reduced parameter edge and line source modelsUse Optical Digital Profilometry directly on masks to validate models and explore masks edge effect qualification



Edge Effect Analysis MethodologyDeveloped by Dan Ceperley for JPL-TPF

• Investigated 50um thick Si masks at 630nm and 785nm.

– With and without 200nm Cr film.– 96um period.– TE and TM polarizations.– Refractive index of Silicon:

• n = 3.88 + j0.2160 at 630nm wavelength.• n = 3.6932 + j0.06 at 785nm wavelength.

– Refractive Index of Chrome:• n = 3.562 + j4.356 at 630nm wavelength.• n = 4.118 + j4.362 at 785nm wavelength.

Si Si

Ligh

t

Si Si

Ligh

t

CrFilm

200nm

Spike Locations

20°96um

50um

• Same cell spacing used for all simulations (dx = 11.9nm).• Small simulation errors: vertical sidewall masks at

630nm had incorrect Cr films. – The Cr refractive index from 785nm was used. – Small errors – results shown with incorrect Cr.– Correct simulations in progress.



Edge-Spikes Represent Difference from Ideal

• Intensity plots for 630nm wavelength case shown on the right.

• Undercutting by 20° reduces spike intensity by 5x.

• Film has little effect in these simulations.– Film is very important for leakage straight

through the Si.– This leakage is not caught by the simulations

(below the noise floor).

TE

TM

VerticalSidewalls

20°UndercutSidewalls



0.099 λ, -160.4°0.078 λ, -154.9°2.46 λ, -51.5°2.46 λ, -51.4°TM0.20 λ, 9.1°0.175 λ, 7.7°2.71 λ, -45.5°2.72 λ, -45.5°TE

FilmNo FilmFilmNo FilmSidewalls20 degreeSidewallsVertical630nm

0.099 λ, -160.4°0.078 λ, -154.9°2.46 λ, -51.5°2.46 λ, -51.4°TM0.20 λ, 9.1°0.175 λ, 7.7°2.71 λ, -45.5°2.72 λ, -45.5°TE


0.031 λ, 3.1°0.023 λ, 34.3°2.18 λ, 114.4°2.18 λ, 114.5°TM0.26 λ, 170.5°0.23 λ, 169.1°2.55 λ, 121.9°2.55 λ, 121.8°TE


0.031 λ, 3.1°0.023 λ, 34.3°2.18 λ, 114.4°2.18 λ, 114.5°TM0.26 λ, 170.5°0.23 λ, 169.1°2.55 λ, 121.9°2.55 λ, 121.8°TE


Single Box-Car Approx.

Boxcars for a single spike

• Strenth of effects (strongest to weakest):1. Undercut angle.2. Polarization.3. Wavelength.4. Film.

• Put a 20 wavelength window around each spike.• Approximated area under spike as boxcar with

height = 1.



Experimental Validation of Vector SimUse bar gratings with sequence of duty cylcles near 50%Opening => Sin(x)/x; Boxcars => Cos(x)Plot sqrt(2nd Order) versus duty cycleShift in minimum gives 2/P(Real part boxcar)Min dip gives 2/P(Imy part boxcar)

50% RealImy

Sqrt(I2)

0.01

50% RealImy

Sqrt(I2)

0.01

Duty Cycle



Novel Guided-Wave MonitorsHigh Q guided wave resonator structure

Changes in duty cycle affect couplingVariations in CD affect QLER produces out of plane scatter

Guided-wave Monitors for CD’s and LERIdentify high Q optical guiding structures as test vehiclesEvaluate sensitivity of angle and bandwidth (Q) of optical coupling into guides to duty cycle, duty cycle spread, and LER



Novel Experiments: Optical Digital Profilometry

Highly sensitive focus targets based on inserting +90 and -90 slivers in periodic arraysMonitoring all aberrationsDirect monitoring of photomask edge effectsPotential for verifying and calibrating models for out of phase photomask edge contributions for both Alternating and Attenuating Phase-Shifting MasksNovel Guided-Wave Monitors



Human/Computer Division of Labor

Late 1960’sCDC 6400, 1 MHz, $500/hr Technologist $30/hr vs 15K FLOPS x 1hr

Early 2000’sPC, 2 GHz, $0.10/hrTechnologist $50/hr vs 1T FLOPS x 1hr

StrategyNeed Technologists understanding and creativityNeed Computers to integrate complexityBalance nature of needs and costs



Simulation is Moving to 6th and 7th Gear

EducationDiagnostics (focus vs. Dose)Process set-pointEquipment Planning (what if)Photomask pre-compensation (Diffraction Limited)Foundation for DFM (Litho, CMP, Etch, Stress)Equipment recognize and tune to goal of design



Physical Models for DFM DFM Goal:

Make chips more manufacturable by linking physical understanding during design.

DFM Importance: At 45 nm a 25% parametric yield loss is anticipated.Every Fab needs high quality DFM models for Designers

DFM Physics:80-90% of the value of physical characterization and modeling is in the first 10-20% of physical understanding.

DFM Efficiency:Knowledge of the dominant phenomena adds critical efficiency in system integration.



Matching Physical Models to DFM Needs Requirements by Nickhil Jakatdar

Design evolves during designLarge volume of first-cut estimates Careful systematic assessment of the last possible gotcha

Early design stage physical requirementsSupport 100,000 queries per secondEasy and simple to calibrate to the fabGive up 5 to 10% accuracy



Modeling and Simulation Evolution Early 1980’s

“Those that can do. Those who cannot, simulate,” Gino Addiego, UCB“Yesterday’s technology Simulated Tomorrow” sign by Mark Law, Stanford“Has Simulation ever found anything first?” Hank Smith, MIT

Early 1990’sAlfred Wong discovers phase-shifting mask imbalanceBell Labs simulate every device experiment first

Early 2000’sSimulate printing of every feature in final layoutInteroperability of simulation with design

flcc seminar 1/29/07 arn 1 flcc kickoff seminar january 29,...

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