generated by intellisuite cleanroom mumps beam 09-09-14
TRANSCRIPT
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Generated by IntelliSuite CleanRoomGenerated by IntelliSuite CleanRoom
MUMPS Beam09-09-1409-09-14
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IntelliSuite
1. Substrate Si Czochralski (100)Substrate thickness: 50 (µm)
Comments:
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IntelliSuite
2. Deposition Si3N4 PECVD (Ar)Film Thickness: 600 nm (Conformal)
Comments:
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IntelliSuite
3. Deposition PolySi LPCVD (SiH4)Film Thickness: 500 nm (Conformal)
Comments:Deposit GND POLY
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IntelliSuite
4. Lithography UV Contact (Suss)POLY0(GDS#13);Leave Photoresist Inside
Comments:Pattern ground plane
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IntelliSuite
5. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 500 nm (Etch Through)
Comments:
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IntelliSuite
6. Lithography UV Contact (Suss)(GDS#41);Leave Photoresist Outside
Comments:provide holes for POLY0
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IntelliSuite
7. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 500 nm (Etch Through)
Comments:
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IntelliSuite
8. Deposition PSG LPCVD (Generic)Film Thickness: 2000 nm (Conformal)
Comments:First Sacrificial PSG
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IntelliSuite
9. Lithography UV Contact (Suss)DIMPLE(GDS#50);Leave Photoresist Outside
Comments:Dimples mask
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IntelliSuite
10. Etch PSG Generic (Generic)Etch Thickness: 750 nm (Partial Etch)
Comments:
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IntelliSuite
11. Lithography UV Contact (Suss)ANCHOR1(GDS#43);Leave Photoresist Outside
Comments:Anchor 1 mask
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IntelliSuite
12. Etch PSG Generic (Generic)Etch Thickness: 2000 nm (Etch Through)
Comments:
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IntelliSuite
13. Deposition PolySi LPCVD (SiH4)Film Thickness: 2000 nm (Conformal)
Comments:Deposition of second poly (POLY1)
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IntelliSuite
14. Lithography UV Contact (Suss)POLY1(GDS#45);Leave Photoresist Inside
Comments:Define POLY1, first structural layer
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IntelliSuite
15. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 2000 nm (Etch Through)
Comments:
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IntelliSuite
16. Lithography UV Contact (Suss)(GDS#0);Leave Photoresist Outside
Comments:provide holes for POLY1
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IntelliSuite
17. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 2000 nm (Etch Through)
Comments:
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IntelliSuite
18. Deposition PSG Generic (Generic)Film Thickness: 750 nm (Conformal)
Comments:Deposition of second sacrificial PSG
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IntelliSuite
19. Lithography UV Contact (Suss)POLY1_POLY2_VIA(GDS#47);Leave Photoresist Outside
Comments:P1P2VIA, Provide structural via to connect POLY1 and POLY2
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IntelliSuite
20. Etch PSG Generic (Generic)Etch Thickness: 750 nm (Etch Through)
Comments:
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IntelliSuite
21. Lithography UV Contact (Suss)ANCHOR2(GDS#52);Leave Photoresist Outside
Comments:ANCHOR2: Provide Anchors for second structural POLY
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IntelliSuite
22. Etch PSG Generic (Generic)Etch Thickness: 750 nm (Etch Through)
Comments:
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IntelliSuite
23. Deposition PolySi LPCVD (SiH4)Film Thickness: 1500 nm (Conformal)
Comments:Deposition of second strucutral POLY (POLY2)
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IntelliSuite
24. Lithography UV Contact (Suss)POLY2(GDS#49);Leave Photoresist Inside
Comments:Define second structural level (POLY2)
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IntelliSuite
25. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 1500 nm (Etch Through)
Comments:
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IntelliSuite
26. Lithography UV Contact (Suss)(GDS#1);Leave Photoresist Outside
Comments:provide holes for POLY2
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IntelliSuite
27. Etch PolySi Dry (SF6-Plasma)Etch Thickness: 1500 nm (Etch Through)
Comments:
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IntelliSuite
28. Deposition PR-S3800 Spin (S3810)Film Thickness: 500 nm (Conformal)
Comments:
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IntelliSuite
29. Lithography UV Contact (Suss)(GDS#51);Leave Photoresist Outside
Comments:pattern METAL level for Lift-off
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IntelliSuite
30. Etch PR-S3800 Wet (1112A)Etch Thickness: 500 nm (Etch Through)
Comments:
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IntelliSuite
31. Deposition Al Sputter (Ar-Ambient)Film Thickness: 1000 nm (Conformal)
Comments:
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IntelliSuite
32. Lithography UV Contact (Suss)(GDS#48);Leave Photoresist Outside
Comments:pattern HOLES in METAL
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IntelliSuite
33. Etch Al Wet (PAN)Etch Thickness: 1000 nm (Etch Through)
Comments:
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IntelliSuite
34. Etch PR-S3800 Wet (Lift-off)Etch Thickness: Lift off
Comments:
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IntelliSuite
35. Etch PSG Generic (Generic)Etch Thickness: Sacrificial Etch
Comments:
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IntelliSuite
Color KeyMaterial Step Transparency Color
Si3N4 2 194
PolySi 3 255
PSG 8 32
PolySi 13 255
PSG 18 32
PolySi 23 255
PR-S3800 28 128
Al 31 128
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IntelliSuite
Summary (1-1)Lithography: 12 Mask Levels
Layer NameLayer Number
SideLeavePhotoresist
Comments
POLY0 13 Top Inside Pattern ground plane
41 Top Outside provide holes for POLY0
DIMPLE 50 Top Outside Dimples mask
ANCHOR1 43 Top Outside Anchor 1 mask
POLY1 45 Top Inside Define POLY1, first structural layer
0 Top Outside provide holes for POLY1
POLY1_POLY2_VIA 47 Top OutsideP1P2VIA, Provide structural via to connect POLY1 and POLY2
ANCHOR2 52 Top OutsideANCHOR2: Provide Anchors for second structural POLY
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IntelliSuite
Summary (1-2)Lithography: 12 Mask Levels
Layer NameLayer Number
SideLeavePhotoresist
Comments
POLY2 49 Top Inside Define second structural level (POLY2)
1 Top Outside provide holes for POLY2
51 Top Outside pattern METAL level for Lift-off
48 Top Outside pattern HOLES in METAL
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IntelliSuite
Summary (2)Depositions/Implants: 8
Material Process Process ID SideThickness(nm)
Comments
Si3N4 PECVD Ar Top 600
PolySi LPCVD SiH4 Top 500 Deposit GND POLY
PSG(Sacrifice) LPCVD Generic Top 2000 First Sacrificial PSG
PolySi LPCVD SiH4 Top 2000Deposition of second poly (POLY1)
PSG(Sacrifice) Generic Generic Top 750Deposition of second sacrificial PSG
PolySi LPCVD SiH4 Top 1500Deposition of second strucutral POLY (POLY2)
PR-S3800 Spin S3810 Top 500
Al Sputter Ar-Ambient Top 1000
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IntelliSuite
Summary (3-1)Etches: 14
Material Process Process ID Side Etch depth (nm) Comments
PolySi Dry SF6-Plasma Top 500(Etch Through)
PolySi Dry SF6-Plasma Top 500(Etch Through)
PSG Generic Generic Top 750(Partial Etch)
PSG Generic Generic Top 2000(Etch Through)
PolySi Dry SF6-Plasma Top 2000(Etch Through)
PolySi Dry SF6-Plasma Top 2000(Etch Through)
PSG Generic Generic Top 750(Etch Through)
PSG Generic Generic Top 750(Etch Through)
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IntelliSuite
Summary (3-2)Etches: 14
Material Process Process ID Side Etch depth (nm) Comments
PolySi Dry SF6-Plasma Both 1500(Etch Through)
PolySi Dry SF6-Plasma Both 1500(Etch Through)
PR-S3800 Wet 1112A Top 500(Etch Through)
Al Wet PAN Top 1000(Etch Through)
PR-S3800 Wet Lift-off Top Lift off
PSG Generic Generic Top Sacrificial Etch
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