malvino
DESCRIPTION
SIXTH EDITION. MALVINO. Electronic. PRINCIPLES. Emitter Followers. Chapter 12. v out. The common-collector or emitter follower amplifier. +V CC. R 1. ac ground. v in. R 2. R E. R L. r e. A =. r e + r e ’. r e = R E R L. T model of the emitter follower amplifier. r e ’. - PowerPoint PPT PresentationTRANSCRIPT
MALVINOElectronic
PRINCIPLESSIXTH EDITION
Chapter 12
Emitter Followers
+VCC
RER2
R1
RL
vin
The common-collector or emitter follower amplifier
vout
ac ground
re’R2R1vin
Tmodel of the emitter follower amplifier
vout = ierere
re = RE RL
vin= ie(re + re’)
re
re + re’
A =
reR2R1vin
model of the emitter follower amplifier
vout(re + re’)
zin(stage) = R1 R2 (re + re’)
RC RL
RC
RLvth
The output side of a common-emitter amplifier
Applying Thevenin’s theorem:
The output impedance is equal to RC.
re’R2R1RG
Tmodel of the emitter follower amplifier
RE RL
A
vth
zout
RL
A
Apply Thevenin’s theorem to point A:
Output impedance of the emitter follower amplifier
re’ +
R1 R2 RG
( )zout = RE
The current gain of the amplifier steps down the impedance of the base circuit. Thus, theoutput impedance of this amplifier is small.
0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A80 A
60 A
40 A
IC(sat) =VCC RE
The dc load line VCE(cutoff) = VCC
Q
The ac load line has a higher slope: re = RE RL
Large signal operation• When the Q point is at the center of the dc load
line, the signal cannot use all of the ac load line without clipping.
• MPP < VCC
• MP = ICQre or VCEQ (whichever is smaller)• MPP = 2MP• When the Q point is at the center of the ac load
line: ICQre = VCEQ
Darlington connection
Q1
Q2
=
Darlington transistor
Push-pull emitter follower
Q1
Q2
RLvout
R4
R1
vin
R3
R2
+VCC
When Q1 is on,the capacitor
charges.
When Q2 is on,the capacitordischarges.
Class B push-pull emitter follower
• ICQ = 0• VCEQ = VCC/2• MPP = VCC
• A 1• zin(base) = RL
• PD(max) = MPP2/40RL (each transistor)• pout(max) = MPP2/8RL
Crossover distortion in class B
Q1
Q2
RLvout
R4
R1
vin
R3
R2
+VCC
Class AB
• Crossover distortion is caused by the barrier potential of the emitter diodes.
• ICQ must be increased to 1 to 5 percent of IC(sat) to eliminate crossover distortion.
• The new operating point is between class A and B but is much closer to B.
Thermal runaway
• When temperature increases, collector current increases.
• More current produces more heat.• Compensating diodes that match the VBE
curves of the transistors are often used.• Any increase in temperature reduces the
bias developed across the diodes.
Diode bias
RL
R
R
vin
+VCC
2VBE
Ibias =VCC - 2VBE
2R
ICQ Ibias
IC(sat) =VCC
2RL
Iav =IC(sat)
Idc(total) = ICQ + Iav
Pdc(in) = VCCIdc(total)
pout(max) =VCC
2
8RL
pout
Pdc
x 100% =
RL
R1
vin
+VCC
R2
R3
R4
Direct-coupled common emitter driver
Q1
Q3
Q2
AQ1 R3
R4
vin
+VCC
R2
R1
Two-stage negative feedback
Q1
Q3
Q2R2 provides both dc and
ac negative feedbackto stabilize the bias and the voltage gain.
+VCC
RL
RS
Zener follower
VoutVZ
Vout = VZ - VBE
IB =Iout
dc
zout = re’ +
dc
RZ
R1
Two-transistor voltage regulator
VZ
R2
Q1
Q2
R3
R4
RL
+Vin
Vout
Vout =R3 + R4
R4
(VZ + VBE)