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Lasers

Lecture

25-03-2020

Semiconductor lasers

2

bull Semiconductors play an important role in optoelectronics as sources (LEDs lasers) and photodetectors

bull Semiconductor lasers are the most numerous of all lasers

bull Widespread applications optical fiber communications barcode scanners laser printers compact disc players pumps for other types of lasers etc hellip

bull Many valuable properties

ndash High efficiency (EO) typically 30-50

ndash Very small size (micrometers millimeters)

ndash Mostly electrical pumping require very modest power supplies also optical pumping

ndash Low voltages (few volts) currents from mA to tens of A

ndash High modulation frequencies (up to 20 GHz)

ndash Many different wavelengths available (from VIS to IRMIR)

ndash Good beam quality possible

bull Ideal lasers Why do we need other lasers


3

Semiconductors

ldquoBonding in Metals and Semiconductorsrdquo section 126 Principles of General Chemistry (v 10)

Conduction band

Valence band

4

Semiconductors

Taken from [10] SM Sze Semiconductor Devices Physics and Technology John Wiley amp Sons New York1992

5

Semiconductors

conduction band

valence band

E

k

Eg

2 2 2

0 02 2

p kE

m m

The allowed kinetic energies of an electron

p ndash particle momentum

m0 ndash effective mass of the electron

k ndash wave vector

h ndash Planck constant

6

Direct indirect bandgap In order to achieve electroluminescence it is necessary to select an appropriate

semiconductors material The most useful material for this purpose are so-called

DIRECT BANDGAP SEMICONDUCTORS

Direct bandgap semiconductors Indirect bandgap semiconductors

electron photon

or momentum p = 2πhk

valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7

Intrinsic semiconductor An intrinsic semiconductor is one that contains relatively small amounts of

impurities At finite temperatures determines the excitation of electrons from the

valence band to the conduction band and levels an equal number of holes in the

valence band

The electron density n(E) (number of electrons per unit volume) in an

semiconductor is given by

toptop EE

dEEFENdEEnn )()()(

where N(E) - density of allowed energy states per unit volume

Etop - the top of the conduction band Etop

kTEE FeEF

)(1

1)(

k ndash the Boltzman constant

T ndash the absolute temperature

- Fermi-Dirac

distribution function

8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac


Fermi energy (EF) ndash is that energy value for which the probability of the state

being occupied is frac12

At T = 0 all energy states below EF are completely filled and above EF are

completely empty

Concentration of the electrons in the conduction band

32

( )

2

22 FE E kTe

e

m kTn e

h

Concentration increases when EF moves closer to conduction band

9

Intrinsic semiconductor

FERMI DISTRIBUTION F(E)

VERSUS (E ndash EF ) FOR

VARIOUS TEMPERATURES

The Fermi distribution function can be approximated by simpler expressions

kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11

Doping bull The energy band

structure may be

modified by introducing

impurity atoms to the

crystal lattice (doping)

bull Eg silicon group IV

from the periodic table

4 outer electrons

bull Donor impurity atom

from the V group (eg

nitrogen phosphorus)

with 5 outer electrons ndash

the one free electron can

be easily lost to the

conduction band

bull Acceptor impurity

atom from the III group

(eg boron) ndash three outer

electrons contributes a

hole to the valence band We can modify the Fermi level by doping

12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13

Semiconductors Part of the Periodic Table Related to Semiconductors


14

Semiconductors Typical compounds


15

Electroluminescence (LED)

16

p-n junction laser (homojunction)

Taken from [4] JT Verdeyen Laser Electronics Prentice Hall Englewood Cliffs 1995

Edge-emitting laser

17

Typical semiconductor laser

The ideal output power

against current

characteristic

Taken from [11] JM Senior Optical Fiber Communications Prentice Hall New York 1992

18

Threshold gaincurrent

Lets introduce threshold gain coefficient thg

depending on current density

threshold

thth Jg

where β is a constant appropriate to specific devices

Fractional loss Fl of the Fabry ndashPerot cavity is

LRRloss

2exp21

where

- single loss coefficient per unit round trip

Fractional gain of the Fabry ndashPerot cavity is

Lggain

2exp

where g

- single gain coefficient per unit round trip

19

Threshold gaincurrent The threshold case requires

12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg

by transformation we can find the threshold value for current density

21

1ln

2

11

RRLJ th

20

Threshold gaincurrent Example

A GaAs injection laser has an optical cavity of length L = 250 μm and widh

w = 100 μm At normal operating temperature the gain factor

β = 21 10-3 [Acm-3] and the loss coefficient

= 10 refractive index n = 36

Assuming R1 = 1 and reflection of mirror 2 3201

12

2

n

nR

The threshold current may be obtain from the equation from the previous slide

2

3

21

106521

ln2

11

cm

A

RRLJ th

The threshold current

mAcavityopticaltheofareaJI thth 663


21

Efficiency

Below the threshold laser acts like a LED

Above the threshold stimulated emission

dominates the spontaneous emission

causing laser emission

Formal definition of the efficiency η

For a laser with drive current I and a threshold

current Ithr the output power of the laser at

wavelength λ is

( )thr

hcP I I

e

22

bull More efficient diode lasers are based on heterojunctions

bull Heterojunction is formed between two different semiconductors with different bangap energies

bull Typical materials eg GaAs and AlGaAs

bull One semiconductor is sandwiched between two cladding layers of another semiconductor

Heterojunction lasers

23

Heterojunction laser

AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode

Power vs Current Spectral width

25

Materials amp wavelengths

Taken from Optics and Photonics an introduction 2nd edition Wiley

26

bull Fabry-Perot

bull Distributed Feedback (DFB)

bull Distributed Bragg Reflector (DBR)

bull Grating-stabilized laser

bull External cavity laser (ECL)

Cavities

27

Modes

Taken from [9] F Tragger Ed Springer Handbook of Lasers and Optics Springer New York 2007

28

bull Incorporates the grating within the laser diode structure itself

bull The Bragg grating selects only one mode

bull single-frequency operation over broad temperature and current ranges

bull Tuning 2-4 nm

bull Linewidth 1 ndash 10 MHz

Distributed feedback laser

29

bull The reflector is outsite the active section

bull Broad tuning range possible (up to 40 nm)

bull Mode hopping possible

Distributed Bragg Reflector

30

bull The grating stabilizes the wavelength of the laser (provides a small feedback)

bull Grating is outside the laser (it is not a laser mirror)

bull Might be placed on a fiber

Grating-stabilized lasers

31

External cavity lasers

bull A grating inside allows

wavelength tuning in a

broad range

bull The linewidths are very

narrow

bull bdquoBulkrdquo construction long

resonator

32

bull VCSEL

Surface emitting laser

bull Limited output power

bull Very small resonator

length (few micrometers)

bull Easy achievable single-

frequency operation

bull High modulation

frequency (useful in

telecom)

bull Most common emission

750 ndash 980 nm

33

bull VECSEL (Vertical External-cavity Surface-emitting Laser)

External cavity

34

VECSELs VECSELs enable optical pumping

35

bull TO can

Housings

36

bull C-mount

Housings

37

bull 14-pin Butterfly

Housings

38

Butterfly - types

Type 1 ndash pump laser Type 2 ndash signal laser

39

Butterfly with bias-T

Function

generator

40

bull Diodes might be coupled with single-mode or multi-mode fibers

bull The fiber type limits the available output power

bull For single-mode fibers up to 1 W

bull Multimode fibers hundreds of watts

Multimode amp singlemode lasers

41

Mid-infrared lasers

bull Quantum Cascade Lasers (QCLs)

bull Interband Cascade Lasers (ICLs)

bull Usually DFB resonator

bull Single-mode operation

bull Custom wavelengths

bull Emission from 6000 nm to 15000 nm

bull Used in sensing spectroscopy

42

Quantum Cascade Laser

Taken from the lecture of Jerome Faist Europhoton Conference Lozanna 2004

43

QCLs

44

QCL example

Nanoplus GmbH

45

bull Stable current sources for driving laser diodes and thermoelectric coolers

bull Tabletop devices available on the market (up to 20A)

Laser diode drivers

46

OEM modules

Example Thorlabs MLD203CHB

bull 200 mA current

bull 3 V voltage

bull Soft-start

bull 17x10mm package

Example Wavelength Electronics FL500

bull 500 mA current

bull 2 V voltage

bull Soft-start

bull 500 kHz modulation

bull 15x12 mm size

47

OEM driver module

2

bull Semiconductors play an important role in optoelectronics as sources (LEDs lasers) and photodetectors

bull Semiconductor lasers are the most numerous of all lasers

bull Widespread applications optical fiber communications barcode scanners laser printers compact disc players pumps for other types of lasers etc hellip

bull Many valuable properties

ndash High efficiency (EO) typically 30-50

ndash Very small size (micrometers millimeters)

ndash Mostly electrical pumping require very modest power supplies also optical pumping

ndash Low voltages (few volts) currents from mA to tens of A

ndash High modulation frequencies (up to 20 GHz)

ndash Many different wavelengths available (from VIS to IRMIR)

ndash Good beam quality possible

bull Ideal lasers Why do we need other lasers


3

Semiconductors


Conduction band

Valence band

4

Semiconductors


5

Semiconductors

conduction band

valence band

E

k

Eg

2 2 2

0 02 2

p kE

m m




k ndash wave vector


6





electron photon


valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

3

Semiconductors


Conduction band

Valence band

4

Semiconductors


5

Semiconductors

conduction band

valence band

E

k

Eg

2 2 2

0 02 2

p kE

m m




k ndash wave vector


6





electron photon


valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

4

Semiconductors


5

Semiconductors

conduction band

valence band

E

k

Eg

2 2 2

0 02 2

p kE

m m




k ndash wave vector


6





electron photon


valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

5

Semiconductors

conduction band

valence band

E

k

Eg

2 2 2

0 02 2

p kE

m m




k ndash wave vector


6





electron photon


valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

6





electron photon


valence band

wave vector k

conduction band

conduction band

k p = 2πhk

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

7




valence band



toptop EE

dEEFENdEEnn )()()(



kTEE FeEF

)(1

1)(



- Fermi-Dirac


8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

8

Fermi level

kTEE FeEF

)(1

1)(

- Fermi-Dirac





completely empty


32

( )

2

22 FE E kTe

e

m kTn e

h


9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

9






kTEEforeEF F

kTEE F 3)(

kTEEforeEF F

kTEE F 31)(


10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

10



(a) band

diagram

(b) density

of state (c) fermi

distribution

function

(d) Carrier

concentration

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

11


structure may be






4 outer electrons







conduction band






12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

12

p-n junction E

nerg

y

Ec

EV

Ec

EV

Ec

EV

EF EF

EF

p n

eV0

EF

p n

+

+

+

+

-

-

-

-

Energ

y

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

13



14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

14



15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

15


16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

16



Edge-emitting laser

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

17



against current

characteristic


18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

18




threshold

thth Jg



LRRloss

2exp21

where



Lggain

2exp

where g


19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

19


12exp2exp 21 LRRLg

12exp21 LgRR

Hence

21

1ln

2

1

RRLg th

the gain threshold

So we can write

thth Jg


21

1ln

2

11

RRLJ th

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

20







12

2

n

nR


2

3

21

106521

ln2

11

cm

A

RRLJ th




21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

21

Efficiency








wavelength λ is

( )thr

hcP I I

e

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

22






23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

23


AlGaAs (n)

GaAs

Substrate n (GaAs)

AlGaAs (p) 1 μm

1 μm

015 μm

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

24

LED vs Laser diode


25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

25



26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

26

bull Fabry-Perot





Cavities

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

27

Modes


28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

28




bull Tuning 2-4 nm



29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

29





30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

30





31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

31




broad range


narrow


resonator

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

32

bull VCSEL






frequency operation



telecom)


750 ndash 980 nm

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

33


External cavity

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

34


35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

35

bull TO can

Housings

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

36

bull C-mount

Housings

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

37


Housings

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

38

Butterfly - types


39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

39


Function

generator

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

40






41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

41

Mid-infrared lasers








42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

42



43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

43

QCLs

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

44

QCL example

Nanoplus GmbH

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

45



Laser diode drivers

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

46

OEM modules


bull 200 mA current

bull 3 V voltage

bull Soft-start



bull 500 mA current

bull 2 V voltage

bull Soft-start


bull 15x12 mm size

47

OEM driver module

47

OEM driver module

prezentacja programu powerpoint · prezentacja programu powerpoint author: aleksander Łukowicz...

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