texas instruments james f. salzman distinguished member technical staff director of technology,...

Texas Instruments

James F. SalzmanDistinguished Member Technical Staff

Director of Technology, Radiation [email protected]

Radiation Effects, and Solutions

for

Space, & HiRel Applications

AMICSA 2010Third International Workshop on Analogue and Mixed Signal Integrated Circuits for Space Applications

5-7 September 2010 Noordwijk, The Netherlands

James F. Salzman

Agenda

• TI HiRel Division Overview

• TI Fabrication Overview

– Freising Wafer Fab - BiCOM

• ELDRS & Mitigation

• The Need for Reliable Space Products

– Satellite Failures

– Product Up-Screening issues

• Understanding Reliability for Space Products

– Bathtub Reliability Curve

– Extrinsic & Intrinix mechanisms

• Space Product Examples

• Summary

AMICSA 2010

James F. Salzman AMICSA 2010

HiRel Products Life Cycle

IntroPhase

OutDeclineMaturityGrowth

ConsumerLife Cycle

As short as 9 months

As long as 30 years

ProductLongevityAssured

ProductLongevityAssured

Extended product life cycles• Obsolescence mitigation • Supply beyond commercial availability• Product resurrection

Leading-edge technology and manufacturing• HiRel approved fabs (certified by Defense &

Aerospace standards)• Access to latest process technologies (HPA07, BiCom, etc.)• Broad packaging capabilities

Market expertise• Baseline control and qualification per unique

market requirements: TID, SEU, high-temp, ceramic, QML –Q/V, EP, die solutions, etc.

Commitment

Overview of TI HiRel Division

• 30+ years of experience working with HiRel customers • Largest dedicated organization in the industry • Worldwide sales and support infrastructure


DMOS 5

• 200mm wafers• CMOS & BiCMOS• Dallas, Texas• 180, 130 nm

DMOS 6

• 300mm wafers Advanced CMOS

• Dallas, Texas• 90, 65 & 45nm

MIHO 5 & 6

• 200mm wafers• CMOS• Miho, Japan

• 200mm wafers• CMOS• Buchon, Korea

ANAM

Advanced, Reliable, Worldwide Production Supply

FFAB

• 200mm wafers• CMOS and BiCMOS• Freising, Germany

• 200mm wafers• CMOS & BiCMOS• Military HiRel• Sherman, Texas

TI Sherman SFAB

• 200mm wafers• CMOS• DSP Headquarters• Houston, Texas

TI Stafford, Houston

DMOS 4• 200mm wafers• CMOS• Dallas, Texas• 250, 180 & 130nm

RFAB• 300mm wafers

Advanced BiCMOS• Dallas, Texas• 2.25X vs. 200mm


Hi-Rel COT Wafer Foundry Model

Over 50 process flows available for COT Engagements

Multiple Entry and Exit points for Customers


Year of foundation: 996 A.D. Oldest brewery in the world Approximately 47,000 inhabitants

City of FreisingCity of Freising

Texas Instruments DeutschlandTexas Instruments DeutschlandEstablished in Germany: 1961Start of Wafer Fab: 1976ISO 9001 / TS 16949 / ISO 14001/EMAS / OHSAS 18001 certified Major regional employer ~ 700 Employees450,000 W/year45% SiGe ( BiCOM )


BiCOM-3XX Technology Overview

• Technology Features:• Complementary SiGe BiCMOS• 0.35 & 0.18um Class• SiGe on SOI• Triple Metal• 5V & 3.3V CMOS• Isolated CMOS• 5V SiGe NPN• 5V SiGe PNP• TFR: NiCrAl 50 Ω/sq• C: 0.7 fF/um2 MIM• R: Poly 290 Ω/sq• Bipolar 3X Performance:

NPN PNP

HFE 200 100

VA 150 100

BVCEO 7.0 6.0

fT 25 25

• 200mm Wafers• Status: In Production• Process Extensions:

• 3X: 25 GHz • 3XL: 50 GHz • 3XHV: 36V

High-Speed & Performance

• Latch up Free• TID > 150K Rad(si)• ELDRS Free• Easy Photo Compensation


BaseEmitter Collector

ELDRS Effects in Bipolar

SiO2 + + +

Total dose radiation causes charge yield in SiO2, and allows interface trap generation under low dose rate conditions. Effect is same as base emitter leakage causing a drop in transistor Gain. i.e. more base current is needed for same collector current. Typically lateral PNP gains are low to begin with, and will drop rapidly under low dose rate.

SiGe uses a totally different type of structure with no base oxide, thus no hole trapping at high or low doses.

+ + +


ELDRS: Interface Trap Yield – Hfe reduction

Under high dose rate there is a high generation of electron-hole pairs (charge yield). The holes are forced to the interface by positive gate voltage, while the electrons are swept away into the gate. The buildup of holes at the interface form a positive charge barrier and repel the generated protons (hydrogen), keeping them from the interface and forming interface states. They typically will recombine.

Under lose dose rates there is low generation of electron-hole pairs. The holes are forced to the interface by positive gate voltage, while the electrons are swept away, in the same way under high dose rate, but the trapped hold buildup is much lower. The repelling force of the trapped holes is low enough to allow the generated protons (hydrogen) to migrate to the interface forming interface states.


Lateral PNP

Transistor HFE

10

20

30

40

50

60

70

5 10 15 20 25 30 35 40 45 50 55 60 65 70

Total Irradiated Dose Krads (si)

80

90

E-Test Limits

Device Design Limits

PNP HFE Dose Rate Effects

Enhanced Low Dose Rate Sensitivity

50 Rads/sec

10 mRads/sec


After J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 34, 1152 (1987)

DVit Increases With the Amount of Hydrogen used in Processing

Process

A B C

Vit

(V)

0.0

0.5

1.0

1.5

tox = 101 nm

Dose = 100 krad(SiO2)

Increasing H

Process

A B C

Vit

(V)

0.0

0.5

1.0

1.5

tox = 101 nm


Increasing H

The Effects of Hydrogen in Analog IC Processing

Devices subject to 100% H2

Test transistors and circuits subjected to small amounts of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics.

Ronald L. Pease, IEEE Transactions on Nuclear Science, December 2004

8 Krad 35 Krad 60 Krad

Final Passivation (hydrogen injection) can greatly effect ELDRS performance in Bipolar Circuits

NH4 Used in producingCompressive Nitride Overcoat

Little Hydrogen present in Passivation Process


Unitrode & Bipolar Product Improvement

• Legacy Unitrode & Bipolar ELDRS performance from SFAB/MFAB ~ 8KRad

• SFAB process adjustment made: Improved Reliability and Hardness

• SFAB Bipolar process now passes 40KRAD @ 10mRad/sec(si) on following devices:– UC1825– UC1825A– UC1846– UC1843A– UC1525B

– UC1637W– UC19432JG

Device Function Package Old SMD # Old TI Part# New SMD # New TI Part#

UC1825 J (16-CDIP)

FK (20-LCCC)

5962-8768101VEA

5962-8768101V2A

UC1825JQMLV

UC1825LQMLV

5962-8768104VEA

5962-8768104V2A

UC1825J-SP

UC1825FK-SP

UC1825A J (16-CDIP) 5962-8768102VEA UC1825AJQMLV 5962-8768105VEA UC1825AJ-SP

UC1525B FK (20-LCCC) 5962-8951105V2A UC1525BLQMLV 5962-8951106V2A UC1525BFK-SP

UC1846 J (16-CDIP)

FK (20-LCCC)

5962-8680601VEA

5962-8680601V2A

UC1846JQMLV

UC1846LQMLV

5962-8680603VEA

5962-8680603V2A

UC1846J-SP

UC1846FK-SP

UC1843A JG (8-CDIP) 5962-8670406VPA UC1843AJQMLV 5962-8670409VPA UC1843AJG-SP

More devices to follow in 2010 & Customers can always drive new releases

In Qualification

Available Now !! – See new Standard Microcircuit Drawing numbers below.

In Qualification– SE555– AM26LS33


P - substrate

P+ Base PolySiGe EpiBase

Silicided Emitter Poly

Base Silicide

Intrinsic Epi

L-Spacer

InterpolyDielectric

SCI

Buried N+ Layer

BOX – Buried Oxide - ( Bonded Wafer Oxide ) – 0.4um

CollectorSilicide

Deep Trench

Charge Collection in BiCOM

Charge Collection Volume

NPN

Heavy Ion

++

+

-

--+

+

--

+-

+

+

ChargeTrack

Space craftparticle penetration

N+


JC-13 Government Liaison – TI ChairmanJC-13.4 Rad Hard – TI Participation• JC-13.1 Discrete Devices• JC-13.2 Microelectronics• JC-13.4 Rad Hard - TI Active• JC-13.5 Hybrids, RF/Microwave, MCM

JC-14 Quality & Reliability – TI Active

US Government Liaisons

• US Army• US Navy• US Air Force • NASA• DSCC• DMEA• GIDEP

Teaming

Europe/Japan/Asia

• JAXA - Japan Aerospace Exploration Agency

• ESA - European Space

Agency • CNES – French Space

Agency• DLR - Deutsches Zentrum für

Luft- und Raumfahrt e.V• BSNC - British National

Space Centre • DSO – Singapore Defense

Science Org• DOS/ISRO – India

Department of Space & Research

Collaborative Relationships


MIL-STD 883H Method 1019.8 Changes

Co60

Radiation Facilities

Updated MIL-STD 883H, Method 1019.8

Parts must be tested within one Hour after Radiation Exposure

1 Hour Max Time

Portable Test Equipment

This means you either have radiation sources at your company close to your testers, or you take a lot of test equipment to the Radiation Facilities. $$$$ !!!

Previous MIL-STD 883G, Method 1019.7

Co60

Radiation Facilities

20 Lbs Dry Ice

Barrier Foam Layer

Anti-Stat Styro Peanuts Fill

Tray with DUTs

-78.5 C

-37 C

-60 to -70 C

Styrofoam Liner

Styrofoam Top LidParts are exposed to Radiation and placed on Dry Ice and shipped to OEM

Parts now have up to 72 hours before testing must occur.( FedEx )

Dry Ice prevents annealing

This means you can ship parts for radiation exposure, and have them shipped back to your production test facilities for standard re-test….

TI ProductionTest Equipment

DRY ICE


Newspaper Headlines

Jan 15, 2009 - Engineers are trying to determine what happened to the telecommunications satellite Astra 5A, which inexplicably failed on Jan. 15 after 12 years of operation. The satellite has since been adrift in space, moving out of its geostationary position about 22,300 miles (35,888 km) above Earth and is moving eastward along its orbital arc.

Mar 7, 2009 - The reason for the loss of the satellite, experts confirmed, was a failure of its electronic components. And the so-called electronic-component base constituted the basis of this spacecraft. The loss of the satellite reminded specialists of a two-year-old story. ... Low-quality components said to be the cause of Russian satellite failure -

Mar 20, 2009 - ... ... the in-orbit satellite failure of the Coast Guard demonstration or the quick-launch satellites, satellite launch and construction delays and cost overruns and in-orbit satellite failures or reduced performance; the failure of our system or reductions in levels of service due to faulty components ...

Satellite Failure Rate ~ 20/year

Sept 1, 2009 The Indian space agency has announced that it lost contact with its lunar orbiter Chandrayaan-1 on Saturday last week. The mission, which has achieved most of its scientific objectives, carried three European instruments. Radio contact with Chandrayaan-1 was lost at 22:00 CEST on 28 August

Aug 08, 2009 NASA’s Mars Reconnaissance Orbiter is in safe mode, a precautionary standby status, and in communications with Earth after unexpectedly switching to its backup computer on Thurs. Aug. 6. This is the fourth computer shutdown on the Mar’s Reconnaissance Orbiter this year

Satellite Grim Reaper


KNOWN SEMICONDUCTOR FAILURE MECHANISMS

• Electromigration (leads, contacts, vias)• Stress Migration (notching, voiding)• Dielectric Leakage / Time-Dependent Dielectric Breakdown• Antenna Charging• Mobile Ions (surface inversion)• Corrosion• Channel Hot Carriers (parametric degradation, NMOS, PMOS)• NBTI (Negative Bias Temperature Instability)• Gate Oxide Integrity (GOI) Time Dependent Dielectric Breakdown TDDB• Thermo-Mechanical Stresses (shear, tensile, fillers, etc.)• Bonding (intermetallic voiding, chip-outs)• Heat Dissipation (impact on failure rate)• Radiation Effects


Typical Up Screening to QMLV flow by some Suppliers

Obtain die fromvarious sources

Radiation Test &Ceramic package

Up-Screening as Required

Sell to end User

• Typically Fab less• No process information• Unknown design rules• Unknown heritage• Unknown future

• Unknown FIT Mechanisms• NBTI• TDDB• CHC• Metal Migration• Etc.

• Out sourced to 3rd Party• May use several vendors• Relies on 3rd party quality• Lack of process information• Lack of Wafer Level Reliability• Lack of package Thermal Analysis

• Typical Lack of experience• Limited product information• Limited Destructive Physical Analysis Size• Lack of full time reliability Engineer• Commercial die reliability ~ 10 years

• Questionable Product• Lack of Ownership


The Reliability Bath Tub Curve

Time

Fa

ilure

Ra

te

Time

Fa

ilure

Ra

te

Extrinsic failures - caused by some type of processing or material defects

Intrinsic failures - happen as a result of wearout

The “bathtub curve” is really the addition of two curves.


No reliability discussion can be complete without mentioning the bathtub curve.

TYPICAL TIME (log scale)

Fai

lure

Rat

e

Infant MortalityExtrinsic Failures

Useful Lifetime

Wear outIntrinsic Failures

EFR Testing/Outlier Process Quals/WLRProduct Quals

6 months – 1 year 10 years

Burn-in 24 hrs

FIT

DPPM to Customer

EFRDPPM

Random Failures

The Reliability Bath Tub Curve

Defects Parts Per Million


The total intrinsic failure curve is the sum of the failure rate of allpossible wearout mechanisms.

Time

Fa

ilure

Rat

e

Total

Gate OxideTDDB

Electromigration

Channel Hot Carriers

A Closer Look at Intrinsic Failures

RadiationNBTI

Radiation is just one of many FIT mechanisms, and often is not the Major mechanism !!!

SmallRandom

FIT’s

Useful Life


DAC5670 2.4GSPS 14bit• 14-bit resolution• 2.4 GSPS maximum update rate DAC

– Dual differential input ports– Maximum 1.2 GSPS each port

• Selectable 2x Interpolation with Fs/2 mixing

• LVDS and HypertransportTM voltage level compatible

• Even/Odd demultiplexed data• DDR output clock• DLL optimized clock timing synchronized

to toggling• input reference bit• On-chip termination resistors• 3.3 V Analog Supply Operation• On-Chip 1.2V Reference• Differential Scalable Current Outputs: 2 to

20 mA• Power Dissipation: 1.5W @ max op

conditions• 192-pin Ball Ceramic BGA

Point to Point Microwave Telecommunication Transceiver Direct Synthesis Modems

EXTIO

EXTLO1.2 V

Reference

BIASJ

IOUTP

IOUTN14-b DAC

DAREFP

DAREFN

InputRCVR

DA[13:0]P

DA[13:0]N

x2

SIF

SC

LK

SD

EN

B

SD

O

SD

IO

InputFormatter

RESETB

TxENABLE

AVDD

AGND

DV

DD

DG

ND

Control

MO

DE

[7:0

]

DB[13:0]N

DB[13:0]P

CLK_OUTP

CLK_OUTN

CL

KP

CL

KN

IOG

ND

IOV

DD

DL

LL

OC

K

DL

LR

ES

ET

DLL

÷ 2

÷ 1÷ 2÷ 4

• Passed 100Krad(Si) TID• No SEL @ 85Mev• QMLV Qualified and Released


QML-V Data Converter Roadmap

2007 - 09 2010 2011 2012

DAC5670

14b 2.4 GHz

ADS5424

14b 105 MHz

ADS5400

12b 1GSPS

In Development

ADS5444

13b 250 MHz

ADS1278

8 Ch 24b 128KHz

DAC5675

14b 400 MHz

Released

ADS5463

12b 500 MHz

ADS6445

Quad 14b 125MSPS


TPS50601-SP6A Monolithic QMLV Point of Load DC-DC Converter

• -55oC to 210oC Operating Temp• Vin = 4.5V to 8V• Min Output Voltage to 0.9V• Integrated Power MOSFETS• TID performance – 100K Rad• No SEL @ > 85MeV• 6A Output Current

– 1A @ 210oC Operation • Synchronous operation

– 300kHz to 1.4MHz Switching Frequency • Power Good, Enable, Adjustable Slow-

start, Current Limit• Adjustable Under voltage Lockout• Cold Sparing capable• 20 Pin Ceramic Flatpack• Known Good Die (KGD) Options

• Start-up Inrush Current Limited

• Reduced External Components

• Easy On/Off Control

• Self-Protected from Fault Conditions

• Low Power Consumption when Switched Off

• Small with Good Thermal Performance

• Customers can use standard TI design software

Product Preview


TI Rad Hard SRAM Releases


• Strong technology/product portfolio for HiRel applications – New devices being QMLV and RHA qualified– Customer & Internal driven roadmaps

• TI-owned Wafer Fabs, Processes and Designs– Third party designs validated against TI design rules and processes

• Established QML-V qualification and production flows– Fully support New Technology requirements of MIL-PRF-38535– All optimizations approved through DSCC, Aerospace, and NASA

• Investments being made to enhance radiation tolerance and reliability– Addresses the needs of multiple market segments, DHD, Medical, Space -– Based on commercial high volume processes– 3rd party IP partnerships for radiation improvements– Specific devices may be ported to commercial rad-tolerant processes– Total dose radiation testing is performed at qualification on all new QML-V product

releases– Custom radiation test options are available for SEE & ELDRS characterization

-

TI Space Products and QML-V Strategies


For More Information

• The TI HiRel, Defense & Aerospace Internet Site

• http://www.ti.com/hirel

• The TI Product Information Center

• 1-800-477-8924

• support.ti.com/sc/pic/americas.htm


Thank You


Down Hole Drilling Harsh Environments

• Environmental Operating Issues– Shock and vibration– Temperature and pressure– High reliability over target lifetime

Seismic applications -40°C to +125°C 1 year

Logging while drilling -40°C to +150°C 1000 hours-40°C to +175°C 200 hours

Wireline -40°C to +175°C 400 hours

Reservoir monitoring +150°C to +225°C 6 months

Permanent applications +150°C 5 years

NBTI, hot carrier, device leakage and latchup are main issues

The same techniques used to harden against radiation effects, improve NBTI, device leakage, and latchup in high temperature applications !!


Targets• 1000MSPS sample rate • 12-Bit resolution• Total Power Dissipation: 2.2W• 72dBc SFDR at 1.25GHz IF and 1GSPS• 57.5dBFS SNR at 1.25GHz IF and 1GSPS• 2.1GHz -3dB Input Bandwidth• 2.0 Vpp Differential Input Voltage

– Adjustable from 1.5-2.0Vpp• DDR LVDS Outputs (1 or 2 Bus option)• Inter-leaving Trim Adjustments provided on-chip to achieve >1GSPS

– For gain: range 1.5-2.0Vpp, resolution 120uV– For offset: range +/-20mV, resolution 120uV– For clock phase: range +/-50ps, resolution 200fs

• 100 pin CQFP package• Temperature Range = -55°C to +125°C• Currently accepting pre-production sample orders!

ADS5400 - 12b 1GSPS ADC


Radiation Hardened 16M SRAM

The C05HA512K32 is a high performance CMOS SRAM organized as 524,288 words by 32 bits.

20ns read, 10ns write maximum access time

Asynchronous functionally compatible with commercial 512Kx32 SRAM’s

Built-in EDAC (Error Detection and Correction) to mitigate soft errors

Built-in Scrub Engine for autonomous correction (scrub frequency and delay is user defined user)

CMOS compatible input and output level, three state bidirectional data bus

3.3 +/- 0.3V I/O, 1.8 +/- 0.15V CORE

68 Lead Ceramic Quad Flat Pack

Qualified Product Release 3Q 2011


Passivation Can Drive Interface Trap Generation Under Radiation

After J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 34, 1152 (1987)

Process

A B C

Vit

(V)

0.0

0.5

1.0

1.5

tox = 101 nm


Increasing H

Process

A B C

Vit

(V)

0.0

0.5

1.0

1.5

tox = 101 nm


Increasing H

The Interface Trap Generation Increases with the Amount of Hydrogen used in Processing

Metal 1SiO2 (TEOS)

Metal 2

SiO2 (TEOS)

Nitride

Active Components

MFAB

Metal 1SiO2 (TEOS)

Metal 2

SiO2 (TEOS)

SiO2 (TEOS)

Active Components

SFAB

Nitride passivation is produced using Ammonia NH3, +

Silane SiH4 where 11 hydrogen atoms are released to

form a single molecule of Si3NH4 ( Nitride ) passivation.

TEOS ( Tetraethylorthosilicate ) does not use Ammonia and has no hydrogen generation in the formation of

SiO2. It is used as interlevel dielectric. This step is

simply repeated for final passivation as a replacement for Nitride. Si(OC2H5)4 → SiO2 + 2O(C2H5)2

Trapped Hydrogen from Nitride Production SFAB TID ELDRS Level = 40-50K rads

MFAB TID ELDRS Level = 6-8K rads

Interface Traps Reduces Transistor Gain in Bipolar Transistors !!!


BiCOM3ZL – Technology Overview

• Technology Features:• SiGe BiCMOS ( 1833BiCOM3ZL)• DT / STI Isolation• 0.18 um 5LM• Gox = 75 /38 A• 50 GHz 3.3V NPN / PNP• 3.3V CMOS• 1.8V CMOS• Isolated NMOS• 15V DECMOS

• EEPROM• Poly Fuse• Varactors• C: 2.0 fF/um2 TIN• HSR: Poly 310Ω/sq• LSR: Poly 10Ω/sq• TFR: SiCr:C 50Ω/sq• Thick 6um Cu Inductors

• Q~15 @ 2 GH

• 200mm Wafers• 30% Shrink over 3XL• Status: Qualified Release 2Q10

NPN PNP

texas instruments james f. salzman distinguished member technical staff director of technology,...

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