vdd and gnd power analysis

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    Slide 1© W. Rhett Davis NC State University ECE 720 Spring 2013

    ECE 720 – ESL & Physical Design

    Lecture 25:

    Power Rail AnalysisSpring 2013

    W. Rhett Davis

    NC State University

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    Slide 2© W. Rhett Davis NC State University ECE 720 Spring 2013

    Announcements

    Homework #8 Due Today

    Project 2 Introduction Monday

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    Slide 3© W. Rhett Davis NC State University ECE 720 Spring 2013

    Today’s Lecture

    Power Rail Failure Modes

    Rail Analysis with EPS/Voltage Storm

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    Slide 4© W. Rhett Davis NC State University ECE 720 Spring 2013

    The Power Rail Problem

    Every time a gate switches, current flows

    from the VDD rail or into the VSS/GND rail

    Where does this current come from?

    Vin Vout

    CL

    Vdd 

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    Slide 5© W. Rhett Davis NC State University ECE 720 Spring 2013

    A Typical Off-Chip I/O Plan

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    Slide 6© W. Rhett Davis NC State University ECE 720 Spring 2013

    Simplified Power Rail Model

    J(s) is a time-varying current source to model aggregatecurrent of many gates

    Cd models wire capacitance, transistor source

    capacitances, and added decoupling capacitance ("decap")

    Quarter 

     power pad 

    4Lp

    Vdd 

    Quarter 

    ground pad 

    d C x y

    ( ) J s x y

     Rs Rs

     Rs Rs

     Rs Rs Rs

     Rs

     

    4Lp

    Source:

    Huang, et al,

    Elec. Comp.

    & Tech. Conf.

    2007

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    Slide 7© W. Rhett Davis NC State University ECE 720 Spring 2013

    Simplified Power Rail Model

    Inductors model bond wires Typically very difficult to analyze by hand, due to large

    number of resistors

    Large matrix solvers or coarse analytical models needed

    Quarter 

     power pad 

    4Lp

    Vdd 

    Quarter 

    ground pad 

    d C x y

    ( ) J s x y

     Rs Rs

     Rs Rs

     Rs Rs Rs

     Rs

     

    4Lp

    Source:

    Huang, et al,

    Elec. Comp.

    & Tech. Conf.

    2007

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    Slide 8© W. Rhett Davis NC State University ECE 720 Spring 2013

    Problem 1: IR-Drop

     Also called "Voltage Droop"

    Change in local supply voltage

    Can cause intermittenttiming failures

    Should static or dynamic analysis be used?

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    Slide 9© W. Rhett Davis NC State University ECE 720 Spring 2013

    Voltage Storm Static Analysis

    Source: Cadence Encounter Power System

    User Guide (wrapper for Voltage Storm and

    other tools)

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    Slide 10© W. Rhett Davis NC State University ECE 720 Spring 2013

    Problem 2: Ldi/dt Noise

     Also called "Simultaneous Switching Noise (SSN)"

    or "Ground Bounce"

    Bond-wire inductance causes

    global ringing in the rail, which

    can significantly increasethe change in rail voltage

    Dynamic analysis needed

    in Cadence Voltage Stormto see these effects

    Cadence claims this is necessary for sub 130nm techs

    Source: Gary Charles

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    Slide 11© W. Rhett Davis NC State University ECE 720 Spring 2013

    Cell-Based Analysis w/ VCD Files

    Experiments show reasonably

    good prediction of SSN using

    currents from cell-based powerestimates from VCD files

    Source: van Heijningen, Badaroglu.et al

    , JSSC 2002

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    Slide 12© W. Rhett Davis NC State University ECE 720 Spring 2013

    Problem 3: Electromigration

    Mean Time to Failure

    (Black's Equation: IEEE

    Trans. Elec. Dev. 1969)

    »

     j – current density» Ea – activation energy

    » T – temperature

    » k – Boltzmann's const.

    Static or Dynamic Analysis?

     

      

     

      kT  Ea

    n

    m

    e j

     AT  MTTF 

    Caused by collisions of

    electrons with metalatoms

    Important to control

    current density

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    Slide 13© W. Rhett Davis NC State University ECE 720 Spring 2013

    Today’s Lecture

    Power Rail Failure Modes

    Rail Analysis with EPS/Voltage Storm

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    Slide 14© W. Rhett Davis NC State University ECE 720 Spring 2013

    Power Pad Location Files

    Needed as input to specify where the power comes in

    from off-chip

    VDD.ppl

    VSS.ppl

    VDD VSS

     VDD 6.0 100.0 metal6

     VSS 188.0 100.0 metal6

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    Slide 15© W. Rhett Davis NC State University ECE 720 Spring 2013

    VDD Rail IR-Drop Analysis

    Results for ir (linear filters):

    ================================

    *

    * Data filtering results for IR drop:* Overall data minimum: 0.949664V 

    * Overall data average: 0.949806V 

    * Overall data maximum: 0.95V 

    *

    * Filter 1: 39791 of 39791 data values fell into this filter.

    * filtered data range: 0.949664V - 0.95V  

    * filtered data average: 0.949806V 

    * 366 values were in range 1: 0.949664V - 0.949706V  

    * 9060 values were in range 2: 0.949706V - 0.949748V 

    * 17298 values were in range 3: 0.949748V - 0.94979V 

    * 2837 values were in range 4: 0.94979V - 0.949832V 

    * 542 values were in range 5: 0.949832V - 0.949874V  

    * 1405 values were in range 6: 0.949874V - 0.949916V 

    * 4748 values were in range 7: 0.949916V - 0.949958V 

    * 3535 values were in range 8: 0.949958V - 0.95V  

    worst-case IR-drop of

    0.336 mV

    number of nodes

    in extracted RC network

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    Slide 16© W. Rhett Davis NC State University ECE 720 Spring 2013

    IR Drop Analysis Plots

    Plots are "zoomed out" so that rails cover layout

    completely

    Why are the areas of greatest IR drop toward

    the center?

    VSS

    rail

    VDDrail

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    Slide 17© W. Rhett Davis NC State University ECE 720 Spring 2013

    Useful Debugging Plots

    Instance Total Power Plot (ip) – 100-1000 nW

     – 10-100 nW – 1-10 nW

    » show highest power towards

    center and bottom

    Instance Switching Power

    Density (W/cm2) (ipd_s)

    » shows more switching towards

    the center of chip

    » May be the cause of large IR-

    drop towards center 

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    Slide 18© W. Rhett Davis NC State University ECE 720 Spring 2013

    VDD Rail Effective Resistance

    Results for reff:

    ===============

    ** Data filtering results for effective resistance:

    * Overall data minimum: 16.7789Ohm 

    * Overall data average: 44.6578Ohm 

    * Overall data maximum: 91.6936Ohm 

    *

    * Filter 1: 9194 of 9194 data values fell into this filter.* filtered data range: 16.7789Ohm - 91.6936Ohm 

    * filtered data average: 44.6578Ohm 

    * 158 values were in range 1: 82.3293Ohm - 91.6936Ohm  

    * 577 values were in range 2: 72.9649Ohm - 82.3293Ohm  

    * 1179 values were in range 3: 63.6006Ohm - 72.9649Ohm 

    * 977 values were in range 4: 54.2362Ohm - 63.6006Ohm  

    * 1410 values were in range 5: 44.8719Ohm - 54.2362Ohm 

    * 1480 values were in range 6: 35.5075Ohm - 44.8719Ohm 

    * 1511 values were in range 7: 26.1432Ohm - 35.5075Ohm 

    * 1902 values were in range 8: 16.7789Ohm - 26.1432Ohm 

    worst-case IR-drop of

    0.336 mV

    number of instances

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    Slide 19© W. Rhett Davis NC State University ECE 720 Spring 2013

    Effective Resistance Plots

    Effective Resistance of rail, from instance to pad

    Instance power not considered

    Helps to identify locations where decap can help

    » Decap can help up to a point, but adding additional

    decap doesn’t help if resistance is too high.

    VSS

    rail

    VDDrail

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    Slide 20© W. Rhett Davis NC State University ECE 720 Spring 2013

    Other Useful Plots

    Electromigration Risk (er)

    » Gaussian distribution assumed

    around MTTF

    » Electromigration Models

    not generated

    » Results appear to show areasof large current density

    Tap Current (er)» Current at each instance's

    supply pin

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    Slide 21© W. Rhett Davis NC State University ECE 720 Spring 2013

    Notes

    Dynamic Analysis not supported by this flow

    Switching activity saved as a TCF (Toggle

    Count File – Cadence's version of SAIF)

    » TCF file used instead of VCD if it exists

    » allows discarding of VCD

    No Decaps exist in our standard cell library

    » Power pad position, rail number/width are the only

    things that we can change, currently