current topics in solid State physics

Editorial Board

Martin S. Brandt, Garching Marilia J. Caldas, Saö Paulo Axel Hoffmann, Berlin Michio Kondo, Tsukuba Shuit-Tong Lee, Hong Kong A n d r e w R. Leitch, Port Elizabeth

Anita Lloyd-Spetz, Unköping Pab lo O r d e j ö n , Barcelona

Pedro P. Prieto, Cali John Robertson, Cambridge

Michael S. Shur, Troy Tadeusz Suski, warsaw Martin Stutzmann, Garching Maria C. Tamargo, New York John I. B. W i l s o n , Edinburgh

Martin N. Wybourne, Hanover

Editor-in-Chief

Martin Stutzmann Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany Fax: +49 (0) 89-28 91-27 37; e-mail: stutz@wsi.tum.de

Regional Editors

Martin S. Brandt Walter-Schottky-Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany Fax: +49 (0) 89-28 91-27 37; e-mail: mbrandt@physik.tu-muenchen.de

Shuit-Tong Lee Centre of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR Fax: +8 52-27 84 46 96; e-mail: st.lee@cityu.edu.hk

Pablo Ordejön Institut de Ciencia de Materials de Barcelona - CSIC Campus de la U.A.B., 08193 Bellaterra, Barcelona, Spain Fax: +34 93-5 80 57 29; e-mail: ordejon@icmab.es

Michael S. Shur Electrical, Computer, and Systems Engineering Department and Physics Department, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA Fax: +1 518-276 2990; e-mail: shurm@rpi.edu

John I. B.Wilson Department of Physics, Heriot Watt University, Riccarton, Edinburgh EH14 4AS, UK Fax: +44 (0) 1 31 - 4 51 31 36; e-mail: j.i.b.wilson@hw.ac.uk

4 1 2007

)WILEY-VCH

Managing Editor

Stefan Hildebrandt Editorial Office, WILEY-VCH Verlag GmbH & Co. KGaA, Bühringstraße 10, 13086 Berlin, Germany Fax: +49 (0) 30-47 03 13 34; e-mail: pss@wiley-vch.de

Contents

Füll text on our homepage at: http://www.pss-c.com

Editorial

It's time to celebrate! Martin Stutzmann 7-8

Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006) Montpellier, France, 15-19 May 2006

Guest Editors: Thierry Bretagnon, Sandra Ruffenach, and Olivier Briot

Light emitting diodes

The quantum efficiency of green GalnN/GaN light emitting diodes W. Zhao, Y. Li, T. Detchprohm, and C. Wetzel 9-12

Quantum well-free nitride-based UV LEDs emitting at 380 nm Philippe de Mierry, Frank Tinjod, Sebastien Chenot, and David Lancefield 13-16

High brightness GaN vertical light emitting diodes on metal alloyed Substrate for general lighting application

Chen-Fu Chu, Chao-Chen Cheng, Wen-Huan Liu, Jiunn-Yi Chu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen, Chuong Anh Tran, and Trung Doan 17-20

Imprint lithography advances in LED manufacturing Robert Hershey, Gary Doyle, Chris Jones, Dwayne LaBrake, and Mike Miller 21-24

Fabrication and optical properties of blue LEDs with silica microsphere coating K. Kusakabe, S. Funazaki, K. Okamoto, S.Nishizawa, andK. Ohkawa 25-28

Fabrication of SAG-AlGaN/InGaN/AlGaN LEDs by mixed-source HVPE with multi-sliding boat System

K. H. Kim, K. S. Jang, S. L. Hwang, H. S. Jeon, W. J. Choi, M. Yang, H. S. Ahn, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike 29-32

Improvement of surface light extraction from flip-chip GaN-based LED by embossing of thermoset-ting polymers

Kui Bao, Bei Zhang, ZhiMin Wang, Tao Dai, XiangNing Kang, ZhiZhong Chen, Ke Xu, Hang Ji, Yong Chen, and ZiZhao Gan 33-36

Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee, and T. Yao. . . . 37-40

Blue light emitting diodes on Si(001) grown by MOVPE F. Schulze, A. Dadgar, F. Bertram, J. Bläsing, A. Diez, P. Veit, R. Clos, J. Christen, andA. Krost 41-44

4 Contents

Current spreading and thermal effects in blue LED dice K. A. Bulashevich, I. Yu. Evstratov, V. F. Myrnrin, and S. Yu. Karpov 45-48

Efficiency enhancement of 400 nm violet LEDs utilizing island-like GaN thick film by HVPE technology

Jenq-Dar Tsay, Po Chun Liu, Yih-Der Guo, Jing-Mei Wang, Wen-Yueh Liu, Shyi-Ming Pan, Liang-Wen Wu, and Michael Heuken 49-52

Fabrication of GaN-based electrolummescent devices on AI Substrates and their application to red, green and blue pixels for flat-panel displays

Koichi Sugimoto, Shinichi Egawa, Masatoshi Arai, and Tohru Honda 53-56

Monolithic white light emitting diodes with a broad emission spectrum A. Dussaigne, J. Brault, B. Damilano, and J. Massies 57-60

GaN-based Schottky-type UV light-emitting diodes and their Integration for flat-panel displays Toshiaki Kobayashi, Shinichi Egawa, Masaru Sawada, and Tohru Honda 61-64

Sol-gel based YAG: Ce3+ powders for applications in LED devices A. Potdevin, G. Chadeyron, D. Boyer, and R. Mahiou 65-69

Laser diodes

Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. K. Son, J. H. Chae, K. S. Kim, K. K. Choi, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park 70-73

Homoepitaxial laser diodes emitting at 390 nm and the influence of Substrate quality Stephan Figge, Jens Dennemarck, and Detlef Hommel 74-77

Deep ridge GaN cw-laser diodes J. Dennemarck, C. Tessarek, S. Figge, and D. Hommel 78-81

Optical gain and Saturation behavior in homoepitaxially grown InGaN/GaN/AIGaN laser structures T. Swietlik, P. Perlin, T. Suski, M. Leszczynski, R. Czernecki, I. Grzegory, and S. Porowski 82-85

Photo detectors and novel devices

M-plane GaN-based dichroic photodetectors C. Rivera, P. Misra, J. L. Pau, E. Mufioz, O. Brandt, H T. Grahn, and K. H. Ploog 86-89

Fabrication and optical characterization of III-nitride air-bridge photonic crystal with GaN quantum dots

Ning Li, M. Arita, S. Kako, M. Kitamura, S. Iwamoto, and Y. Arakawa 90-94

Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids D. Coquillat, M. Le Vassor d'Yerville, S. A. Boubanga Tombet, C. Liu, K. Bejtka, I. M. Watson, P. R Edwards, R. W. Martin, H. M. H. Chong, and R. M. De La Rue 95-99

Spatial mapping on surface light extraction from 2D photonic quasicrystals patterned GaN-based light emitters

ZhenSheng Zhang, Bei Zhang, Tao Dai, Kui Bao, Dan Liu, Xiao Wang, XiangNing Kang, Jun Xu, DaPeng Yu, and Xing Zhu 100-103

Photonic circuits writing with UV pulsed laser K. R. Kribich, S. Gatti, J. Jabbour, G. Pille, S. Calas, T. Mazingue, P. Etienne, R. Legros, andY. Moreau 104-107

Contents 5

Streng coupling in bulk GaN microcavities grown on Silicon F. Reveret, I. R. Seilers, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, andJ. Massies 108-111

Growth and characterization

Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition

Hee Jin Kim, Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Yoori Shin, Keon-Hun Lee, Ho-Sang Kwak, Yong Hoon Cho, Jung Won Yoon, Hyeonsik Cheong, and EuijoonYoon . . . 112-115

Growth of thick GaN layers on c-plane sapphire Substrates using stress absorbing layer (SAL) H. Goto, S. W. Lee, J. Kinomoto, S. T. Kim, H. C. Ko, M. W. Cho, and T. Yao 116-119

Improved A1N buffer layer technologies for UV-LEDs F. Ranalli, P. J. Parbrook, T. Wang, J. Bai, K. B. Lee, R. J. Airey, G. Hill, A. Tahraoui, and A. G. Cullis 120-124

Growth of InGaN layer on GaN templated A1203 (0001) and Si(l 11) Substrates by mixed-source HVPE

S. L. Hwang, K. S. Jang, K. H. Kim, H. S. Jeon, H. S. Ahn, M. Yang, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike 125-128

GaN property evolution at all stages of MOVPE Si/N treatment growth I. Halidou, Z. Benzarti, H. Fitouri, W. Fathallah, and B. El Jani 129-132

Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, and M. Koike 133-136

High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennegues, and L. Hirsch 137-140

Surface modifications and optical properties of blue InGaN Single quantum well by in-situ thermal treatments

Sung-Nam Lee, H. S. Paek, J. K. Son, T. Sakong, Y. N. Kwon, O. H. Nam, and Y. Park . . . . 141-144

Analysis of GaN decomposition in an atmospheric MOVPE vertical reactor W. Fathallah, T. Boufaden, and B. El Jani 145-149

Initial growth stages of MOVPE InN studied by AFM and specular reflectivity A. van der Lee, F. Salah, B. Harzallah, S. Ruffenach, and O. Briot 150-153

Growth kinetics and properties of ZnO/ZnMgO hetero-structures grown by radical-source molecular beam epitaxy

S. V Ivanov, A. El-Shaer, T. V. Shubina, S. B. Listoshin, A. Bakin, and A. Waag 154-157

ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs A. Bakin, A. El-Shaer, A. C. Mofor, M. Al-Suleiman, E. Schlenker, and A. Waag 158-161

ZnO films fabricated by spin coating and their application to UV electroluminescent devices K. Yoshioka, S. Egawa, T. Kobayashi, T. Baba, K. Sugimoto, M. Arai, H. Nomura, M. Sato, and T.Honda 162-165

Materials characterization

Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off technique Rui Li, Weihua Chen, Xiangning Kang, Ke Xu, Jun Xu, Zhijian Yang, Ruijuan Nie, Tongjun Yu, Zhizhong Chen, Zhixin Qin, Guoyi Zhang, Zizhao Gan, and Xiaodong Hu . . . . 166-169

6 Contents

Phonons in strained AlGaN/GaN superlattices V. Darakchieva, B. Monemar, T. Paskova, S. Einfeldt, D. Hommel, and S. Lourdudoss . . . . 170-174

Fast time behavior of the polarization filtering in anisotropically strained M-plane GaN films T. Flissikowski, P. Misra, O. Brandt, and H. T. Grahn 175-178

Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures

C. Vierheilig, H. Braun, U. T. Schwarz, W. Wegscheider, E. Baur, U. Strauß, and V. Härle . . 179-182

Radiative lifetime in wurtzite GaN/AlN quantum dots R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies 183-186

A comparative study of the internal quantum efficiency for the green MQWs grown on sapphire and FS-GaN Substrates

Yong-Hee Jeong, Hae-Yong Lee, Jae-Young Park, Jong-Pil Jeong, Chang-Hee Hong, and Eun-Kyung Suh 187-191

Investigation of internal field effect and blue-shift in InGaN-based blue laser diodes by time-resolved optical technique

J. K. Son, T. Sakong, J. S. Hwang, S. N. Lee, H. S. Paek, H. Y. Ryu, K. H. Ha, Y. H. Cho, O. Nam, and Y. Park 192-195

Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes

Tao Dai, Bei Zhang, ZhenSheng Zhang, Jun Xu, WeiHua Chen, Rui Li, Kui Bao, QiYuan Wei, Ke Xu, XiaoDong Hu, ZhiJian Yang, XiangNing Kang, YaoBo Pan, Min Lu, GuoYi Zhang, andZiZhaoGan 196-199

Dry etching of N-face GaN using two high-density plasma etch techniques F. Rizzi, K. Bejtka, F. Semond, E. Gu, M. D. Dawson, I. M. Watson, and R. W. Martin . . . . 200-203

Elastic constants of aluminum nitride M. Kazan, E. Moussaed, R. Nader, and P. Masri 204-207

Effects of lattice-mismatch induced built-in strain on the valence band properties of wurtzite ZnO/Zni ^Mg^O quantum well heterostructures

K. Zitouni and A. Kadri 208-211

On the use of the thermal step method as a tool for study of space Charge in semiconductor gallium nitride: GaN

M. S. Bergaoui, A. Matoussi, N. Chaabane, S. Guermazi, A. Toureille, and B. El Jani 212-215

Further papers of Conference ISBLLED 2006 are published in physica Status solidi (a) 204, No. 1 (2007).

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