mr-nil210 - a new pdms-compatible photo-curable...

mr-NIL210 - A New PDMS-Compatible Photo-Curable Nanoimprint Resist ls.15.11.10.03 mr-NIL210 is a purely organic, photo-curable NIL resist featuring excellent curing and nanoimprint performance in combination with PDMS soft stamp materials. The most important industrial key parameters like its optimizied PDMS compatibility (i.e. extended stamp longevity), increased dry etching resistance in demanding plasma processes (i.e. manufacturing of patterned sapphire substrates PSS), and excellent reproducibility enabling high volume production are unprecedentedly addressed. 1 UV-PDMS was provided by Shin-Etsu Silicones and UV-PDMS X-34-4184 A/B was used for the fabrication of all mentioned NIL stamp copies. The work presented herein was achieved in close cooperation with Shin-Etsu Silicones, Japan. The etching performance was determined in cooperation with Sentech Instruments GmbH, Germany and the Ferdinand-Braun Institut, Germany. Example 2 Large area imprint (50 x 50 mm) of sub micron pillars (500 nm in diameter, 1.12 μm in height) into mr-NIL210 using a UV-PDMS 1 stamp. Example 1 Imprint of miscellaneous nano- and micrometer test structures into mr-NIL210 using a UV-PDMS 1 stamp. Ø 100 nm Ø 100 nm h 200 nm h 200 nm Imprint Parameters Photo-NIL resist: mr-NIL210 Stamp material: UV-PDMS X-34-4184-A/B 1 Substrate: 2 inch Si wafer (w/o Primer) Imprint: 1000 mJ cm -2 Hg bulb (365 nm) radiation, no applied pressure Initial layer thickness: 1.8 μm (w/o optimization of the residual layer) Resolution: smallest resolution presented herein are 100 nm pillars 500 nm Pillars, AR>2 Film characteristics – Brilliant film forming characteristics, film stability, film thickness uniformity, and storage stability over several hours – Film thickness freely adjustable from sub 100 nm rage up to several microns Photo-Nanoimprinting – Excellent imprint and photo-curing performance under ambient conditions as well as in the presence of air – Outstanding compatibility to PDMS soft NIL stamps – Suitable for the fabrication of micro- and nanoimprinted structures – Enables high volume production by extended PDMS stamp longevity – Photo-curing enabled also for LED (up to 405 nm) beside Hg bulp Dry etching characteristics and stripping – Excellent etching characteristics for many demanding substrates like sapphire, silica, etc. – Facile removal of residual cured resist material by wet-chemical stripping or by oxygen plasma stripping Etching Performance in Sapphire 0.00 0.25 0.50 0.75 1.00 Relative etch rate [normalized] Etch rate of mr-NIL210 is 1.35 fold low- er compared to sapphire (versus conven- tional photoresist SPR955 0.93). mr-NIL210 is especially developed as an etch mask for sapphire etching. Figure Comparison of the dry etching rate between sapphire and mr-NIL210. sapphire mr-NIL210 XP Etch tool: ICP-RIE Plasma Etcher - SI 500 from Sentech, Germany Etching parameters: chamber pressure 0.5 Pa, ICP 800 W, RF 300 W, bias voltage -240V, Cl 2 /BCl 3 plasma, He-backside cooling (25 °C), 2-inch sapphire wafer micro resist technology GmbH Köpenicker Straße 325 12555 Berlin Germany Tel.: +49 (0) 30 641670100 Fax: +49 (o) 30 641670200 [email protected] www.microresist.com

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Page 1: mr-NIL210 - A New PDMS-Compatible Photo-Curable ...microchem.com/products/images/uploads/PI_mrNIL210.pdfmr-NIL210 - A New PDMS-Compatible Photo-Curable Nanoimprint Resist ls.15.11.10.03

mr-NIL210 - A New PDMS-Compatible Photo-Curable Nanoimprint Resist

ls.15.11.10.03

mr-NIL210 is a purely organic, photo-curable NIL resist featuring excellent curing and nanoimprint performance

in combination with PDMS soft stamp materials. The most important industrial key parameters like its optimizied

PDMS compatibility (i.e. extended stamp longevity), increased dry etching resistance in demanding plasma processes

(i.e. manufacturing of patterned sapphire substrates PSS), and excellent reproducibility enabling high volume

production are unprecedentedly addressed.

1 UV-PDMS was provided by Shin-Etsu Silicones

and UV-PDMS X-34-4184 A/B was used for the

fabrication of all mentioned NIL stamp copies.

The work presented he-

rein was achieved in close

cooperation with Shin-Etsu

Silicones, Japan.

The etching performance was determined in

cooperation with Sentech Instruments GmbH,

Germany and the Ferdinand-Braun Institut,

Germany.

Example 2 Large area imprint (50 x 50 mm) of sub micron pillars (500 nm in diameter, 1.12 µm in height) into mr-NIL210 using a UV-PDMS1 stamp.

Example 1 Imprint of miscellaneous nano- and micrometer test structures into mr-NIL210 using a UV-PDMS1 stamp.

Ø 100 nm

h 200 nm

Imprint Parameters

Photo-NIL resist: mr-NIL210

Stamp material: UV-PDMS X-34-4184-A/B1

Substrate: 2 inch Si wafer (w/o Primer)

Imprint: 1000 mJ cm-2 Hg bulb (365 nm) radiation, no applied pressure

Initial layer thickness: 1.8 µm (w/o optimization of the residual layer)

Resolution: smallest resolution presented herein are 100 nm pillars

500 nm Pillars, AR>2

Film characteristics– Brilliant film forming characteristics, film stability, film thickness

uniformity, and storage stability over several hours– Film thickness freely adjustable from sub 100 nm rage up to

several microns

Photo-Nanoimprinting– Excellent imprint and photo-curing performance under ambient

conditions as well as in the presence of air– Outstanding compatibility to PDMS soft NIL stamps– Suitable for the fabrication of micro- and nanoimprinted structures– Enables high volume production by extended PDMS stamp longevity– Photo-curing enabled also for LED (up to 405 nm) beside Hg bulp

Dry etching characteristics and stripping– Excellent etching characteristics for many demanding substrates like

sapphire, silica, etc.– Facile removal of residual cured resist material by wet-chemical

stripping or by oxygen plasma stripping

Etching Performance in Sapphire

sapphiremr-NIL210 XP0.00

0.25

0.50

0.75

1.00

Rel

ativ

e et