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The top documents tagged [nm eot]
18 July 2001 Work In Progress – Not for Publication 2001 ITRS Front End Process July 18, 2001 San Francisco, CA
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2001 ITRS Front End Process November 29, 2001 Santa Clara, CA
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Institute of Microelectronics, PKU SINANO Workshop, Montreux, Switzerland Sept. 12~16, 2006 Reliability Degradation Characteristics of Ultra-thin Gate
213 views
DRC 2009 1 0.37 mS/ m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg
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Radiation induced charge trapping in ultra-thin HfO 2 based MOSFETs
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III-V FET Channel Designs for High Current Densities and Thin Inversion Layers
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805-893-3244, 805-893-5705 fax Mark Rodwell University
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Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
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Radiation induced charge trapping in ultra-thin HfO 2 based MOSFETs
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1 In 0.53 Ga 0.47 As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti PhD Defense Aug 21, 2009 *
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213 views