scalability of plasma-enhanced cvd and ald towards … 3 450m… · © 2005 asm scalability of...

© 2005 ASM

Scalability of Plasma-enhanced CVD and ALD towards 450mm

Nobuyoshi KobayashiDirector, R&D

ASM

June 22nd, 2011

Front-End Operations

© 2005 ASM 2

Contents

• Introduction for ASM Tool Line-up

• Plasma-enhanced CVD and ALD Roadmap

• Scalability towards 450mm

• Conclusions

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© 2005 ASM 3

Scaling will increasingly be enabled by Materials and 3D Technologies

1995 2000 2005 2010 20151990 2025

Scaling enabled by Litho

Scaling enabled by Materials

Scaling enabled by 3D

2020

Low-k

Strained Si

High-k

FinFET

3D Memory

IEDM 2002

IEDM 2003

IEDM 2007

3D SIC

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© 2005 ASM 4

ASM ProductsThin Film Deposition Solutions

Pulsar®

ALD

Cross-Flow

High-kAlO Apps.

Eagle®

Dragon®

PECVD/UV Cure/(PE)ALD

Showerhead

Low-kSpacer

PMD, IMD

EmerALD®

(PE)ALD

Showerhead

Metal Gate

MFLR

(PE)ALD

Cross-Flow

DPT

A412™ A400™

CVD/ALD/ Diffusion

Vertical Batch

Ox./AnnealPoly Si

Oxide/NitrideTiN Apps.

Epsilon®

Epitaxy

Cross-Flow

Epi Wfrs HBT’sStrain

XP Common Single Wafer Platform (2007 ~ 2011 ����)

New Products

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© 2005 ASM 5

ALD Technology Platform and Organization

Product Development, Product Engineering, Product Marketing and NPI Support

Process Development

Process Integration 32 - 22 nm

(A412) Demo Lab 300 mm

Bilateral and IIAP Projects

Pre-cursor Exploration and Feasibility

Materials R&D

Thin Film Characterization

ASM Belgium

ASM Europe

ASM Microchemistry (Finland)

AL

D

ASM America ASM Japan ASM Korea

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© 2005 ASM 6

Contents

• Introduction for ASM tool line-up

• Plasma-enhanced CVD and ALD Roadmap

• Scalability towards 450mm

• Conclusions

Front-End Operations

© 2005 ASM 72012-10-01Confidential and Proprietary Information 7

Aurora® Low-k & UVC RoadmapPECVD

2.00

2.25

2.50

2.75

3.00

3.25

3.50

0 5 10 15 20 25 30 35

Porosity (%)

Die

lec

tric

co

ns

tan

t

Aurora®Lowk

Aurora®ULK

Aurora®ELK

+ UV

65nm ~ 45nm

k = 2.7

UV assisted

Non-porogen

32/22 nm node k<2.6 UV assisted

Porogen

15nm node k<2.3

10nm node k<2.0

Aurora®ELK

+ Advance UV

90nm node

k = 2.95~3.1

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© 2005 ASM 8

Radical, Ion

ASM Patented Plasma-enhanced ALD

Precursor Pulse & Reactant Flow

Purge & Reactant Flow

RF ON & Reactant Flow

Plasma

Reactant Flow

Conformal Films

Low Temperature

Stress Tuning

Thx Control

PEALD SiO2 on SOC

By Courtesy of CASMAT* (Material Supplier Consortia in Japan)

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© 2005 ASM 9

Enabling Solution for BEOL low-k (k<2.2)Restoration and Pore sealing by PEALD/CVD

Porous SiOCH (k<2.2)

Pore sealing by PEALD

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© 2005 ASM 10

Contents

• Introduction for ASM tool line-up

• Plasma-enhanced CVD and ALD roadmap

• Scalability towards 450mm

• Conclusions

Front-End Operations

© 2005 ASM 11

450mm Tool ConceptPECVD and PEALD

• High-productivity SW tool with a scalability towards 450mm

• Small footprint/throughput, and small width/throughput.

• Common platform and highly standardized RC

covers PECVD, PEALD and UVC applications

• HVM oriented HW configuration enables easy

and flexible process control

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© 2005 ASM 12

Wafer Transfer

Exhaust

Gas In

RF

• Most of the RC parts are COMMON for all the processes,

PECVD, PEALD and UVC.

• Symmetrical plasma distribution for excellent uniformity

• Upper chamber-unit change for the applications

PECVD - Basic Design

PEALD + Switching Valves.

+ Minimize SHD

inside-space

UVC + UV lamp unit

Commonality of Reactor Chamber (RC)

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Easy adjustment of film properties:

• All film property effective parameters can be adjusted independently.

• Enabling easy and precise film tuning.

Independent tuning nobs Effects

• RF Power (2RF) GR, Stress, Thx unif

• Susceptor Temperature WER, Stress, RI

• Precursor flow GR, WER, Stress,

Composition

• Process Time Thx

Process flexibility with independent tuning nobs

Low High

RF Power

Film

Str

ess

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© 2005 ASM 14

Conclusions

• ASM has provided leading-edge 300mm deposition tools for HVM, such as ALD high-k and epitaxy for FEOL, TEOS oxide and Low-k carbon doped oxide for BEOL, and very low-temperature Plasma-enhanced ALD SiO2 for advanced litho applications.

• Common platform with Plasma-enhanced CVD and ALD provides various enabling solutions for advanced litho, FEOL and BEOL.

• We succeeded in the development of the new 300mm platform for PECVD and ALD which had the highest productivity with

small footprint.

• “Intelligent scaling” can be used to scale the current platform and its productivity to 450mm.

Intelligent scale-up – low technical risk approach while keeping ASM’s unique innovative power that is proven in 300mm.

ASM continues providing systems and process

solutions to meet the needs of the customer