scalability of plasma-enhanced cvd and ald towards … 3 450m… · © 2005 asm scalability of...

© 2005 ASM

Scalability of Plasma-enhanced CVD and ALD towards 450mm

Nobuyoshi KobayashiDirector, R&D

ASM

June 22nd, 2011

Front-End Operations

© 2005 ASM 2

Contents

• Introduction for ASM Tool Line-up

• Plasma-enhanced CVD and ALD Roadmap

• Scalability towards 450mm

• Conclusions


© 2005 ASM 3

Scaling will increasingly be enabled by Materials and 3D Technologies

1995 2000 2005 2010 20151990 2025

Scaling enabled by Litho

Scaling enabled by Materials

Scaling enabled by 3D

2020

Low-k

Strained Si

High-k

FinFET

3D Memory

IEDM 2002

IEDM 2003

IEDM 2007

3D SIC


© 2005 ASM 4

ASM ProductsThin Film Deposition Solutions

Pulsar®

ALD

Cross-Flow

High-kAlO Apps.

Eagle®

Dragon®

PECVD/UV Cure/(PE)ALD

Showerhead

Low-kSpacer

PMD, IMD

EmerALD®

(PE)ALD

Showerhead

Metal Gate

MFLR

(PE)ALD

Cross-Flow

DPT

A412™ A400™

CVD/ALD/ Diffusion

Vertical Batch

Ox./AnnealPoly Si

Oxide/NitrideTiN Apps.

Epsilon®

Epitaxy

Cross-Flow

Epi Wfrs HBT’sStrain

XP Common Single Wafer Platform (2007 ~ 2011 ��)

New Products


© 2005 ASM 5

ALD Technology Platform and Organization

Product Development, Product Engineering, Product Marketing and NPI Support

Process Development

Process Integration 32 - 22 nm

(A412) Demo Lab 300 mm

Bilateral and IIAP Projects

Pre-cursor Exploration and Feasibility

Materials R&D

Thin Film Characterization

ASM Belgium

ASM Europe

ASM Microchemistry (Finland)

AL

D

ASM America ASM Japan ASM Korea


© 2005 ASM 6

Contents

• Introduction for ASM tool line-up

• Plasma-enhanced CVD and ALD Roadmap


• Conclusions


© 2005 ASM 72012-10-01Confidential and Proprietary Information 7

Aurora® Low-k & UVC RoadmapPECVD

2.00

2.25

2.50

2.75

3.00

3.25

3.50

0 5 10 15 20 25 30 35

Porosity (%)

Die

lec

tric

co

ns

tan

t

Aurora®Lowk

Aurora®ULK

Aurora®ELK

+ UV

65nm ~ 45nm

k = 2.7

UV assisted

Non-porogen

32/22 nm node k<2.6 UV assisted

Porogen

15nm node k<2.3

10nm node k<2.0

Aurora®ELK

+ Advance UV

90nm node

k = 2.95~3.1


© 2005 ASM 8

Radical, Ion

ASM Patented Plasma-enhanced ALD

Precursor Pulse & Reactant Flow

Purge & Reactant Flow

RF ON & Reactant Flow

Plasma

Reactant Flow

Conformal Films

Low Temperature

Stress Tuning

Thx Control

PEALD SiO2 on SOC

By Courtesy of CASMAT* (Material Supplier Consortia in Japan)


© 2005 ASM 9

Enabling Solution for BEOL low-k (k<2.2)Restoration and Pore sealing by PEALD/CVD

Porous SiOCH (k<2.2)

Pore sealing by PEALD


© 2005 ASM 11

450mm Tool ConceptPECVD and PEALD

• High-productivity SW tool with a scalability towards 450mm

• Small footprint/throughput, and small width/throughput.

• Common platform and highly standardized RC

covers PECVD, PEALD and UVC applications

• HVM oriented HW configuration enables easy

and flexible process control


© 2005 ASM 12

Wafer Transfer

Exhaust

Gas In

RF

• Most of the RC parts are COMMON for all the processes,

PECVD, PEALD and UVC.

• Symmetrical plasma distribution for excellent uniformity

• Upper chamber-unit change for the applications

PECVD - Basic Design

PEALD + Switching Valves.

+ Minimize SHD

inside-space

UVC + UV lamp unit

Commonality of Reactor Chamber (RC)


© 2005 ASM 13

Easy adjustment of film properties:

• All film property effective parameters can be adjusted independently.

• Enabling easy and precise film tuning.

Independent tuning nobs Effects

• RF Power (2RF) GR, Stress, Thx unif

• Susceptor Temperature WER, Stress, RI

• Precursor flow GR, WER, Stress,

Composition

• Process Time Thx

Process flexibility with independent tuning nobs

Low High

RF Power

Film

Str

ess


© 2005 ASM 14

Conclusions

• ASM has provided leading-edge 300mm deposition tools for HVM, such as ALD high-k and epitaxy for FEOL, TEOS oxide and Low-k carbon doped oxide for BEOL, and very low-temperature Plasma-enhanced ALD SiO2 for advanced litho applications.

• Common platform with Plasma-enhanced CVD and ALD provides various enabling solutions for advanced litho, FEOL and BEOL.

• We succeeded in the development of the new 300mm platform for PECVD and ALD which had the highest productivity with

small footprint.

• “Intelligent scaling” can be used to scale the current platform and its productivity to 450mm.

Intelligent scale-up – low technical risk approach while keeping ASM’s unique innovative power that is proven in 300mm.

ASM continues providing systems and process

solutions to meet the needs of the customer

scalability of plasma-enhanced cvd and ald towards … 3 450m… · © 2005 asm scalability of...

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