datasheet ikd10n60rc2 · 2021. 1. 20. · datasheet 3 v 2.1 2020-09-28 ikd10n60rc2 trenchstoptm...

Datasheet Please�read�the�Important�Notice�and�Warnings�at�the�end�of�this�document V�2.1www.infineon.com 2020-09-28

IKD10N60RC2

TRENCHSTOPTM�RC-Series�for�hard�switching�applications

Cost�effective�monolithically�integrated�IGBT�with�Diode�Features:

TRENCHSTOPTM�Reverse�Conducting�(RC)�technology�for�600Vapplications�offering•�Very�tight�parameter�distribution•�Operating�range�up�to�20kHz•�Maximum�junction�temperature�175°C•�Short�circuit�capability�of�3µs•�Humidity�robust�design•�Pb-free�lead�plating;�RoHS�compliant•�Complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/rc-d2

Potential�Applications:

•�Major�Home�Appliances��-�Air�Conditioning��-�Refrigerators•�Drives��-�GPD�(General�Purpose�Drives)

Product�Validation:

Qualified�for�industrial�applications�according�to�the�relevant�testsof�JEDEC47/20/22

G

C

E

G

E

C

Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIKD10N60RC2 600V 10A 2V 175°C K10DRC2 PG-TO252-3

Datasheet 2 V�2.12020-09-28

IKD10N60RC2


Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 3 V�2.12020-09-28

IKD10N60RC2


Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.

Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 600 VDC�collector�current,�limited�by�TvjmaxTc�=�25°CTc�=�100°C

IC 18.812.6

A

Pulsed�collector�current,�tp�limited�by�Tvjmax ICpuls 30.0 ATurn off safe operating areaVCE�≤�600V,�Tvj�≤�175°C,�tp�=�1µs - 30.0 A

Diode�forward�current,�limited�by�TvjmaxTc�=�25°CTc�=�100°C

IF 8.94.6

A

Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 30.0 AGate-emitter voltageTransient�Gate-emitter�voltage�(tp�≤�10µs,�D�

Datasheet 4 V�2.12020-09-28

IKD10N60RC2


Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static�Characteristic

Collector-emitter saturation voltage VCEsatVGE�=�15.0V,�IC�=�10.0ATvj�=�25°CTvj�=�175°C

--

2.002.40

2.30-

V

Diode forward voltage VFVGE�=�0V,�IF�=�10.0ATvj�=�25°CTvj�=�175°C

--

1.901.95

2.20-

V

Gate-emitter threshold voltage VGE(th) IC�=�0.11mA,�VCE�=�VGE 4.3 5.0 5.7 V

Zero gate voltage collector current ICESVCE�=�600V,�VGE�=�0VTvj�=�25°CTvj�=�175°C

--

--

252500

µA

Gate-emitter leakage current IGES VCE�=�0V,�VGE�=�20V - - 100 nATransconductance gfs VCE�=�20V,�IC�=�10.0A - 4.5 - SIntegrated gate resistor rG none Ω

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.


Dynamic�Characteristic

Input capacitance Cies - 400 -Output capacitance Coes - 20 -Reverse transfer capacitance Cres - 15 -

VCE�=�25V,�VGE�=�0Vf�=�1000kHz pF

Gate charge QG VCC�=�480V,�IC�=�10.0A,VGE�=�15V - 48.0 - nC

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 14 - nsRise time tr - 13 - nsTurn-off delay time td(off) - 250 - nsFall time tf - 21 - nsTurn-on energy Eon - 0.32 - mJTurn-off energy Eoff - 0.17 - mJTotal switching energy Ets - 0.49 - mJ

Tvj�=�25°C,VCC�=�400V,�IC�=�10.0A,VGE�=�0.0/15.0V,RG(on)�=�49.0Ω,�RG(off)�=�49.0Ω,Lσ�=�30nH,�Cσ�=�32pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V�2.12020-09-28

IKD10N60RC2


Diode�Characteristic,�at�Tvj�=�25°C

Diode reverse recovery time trr - 104 - nsDiode reverse recovery charge Qrr - 337.00 - nC Diode peak reverse recovery current Irrm - 9.5 - ADiode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -190 - A/µs

Tvj�=�25°C,VR�=�400V,IF�=�10.0A,diF/dt�=�758A/µs

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�175°CTurn-on delay time td(on) - 9 - nsRise time tr - 17 - nsTurn-off delay time td(off) - 270 - nsFall time tf - 16 - nsTurn-on energy Eon - 0.42 - mJTurn-off energy Eoff - 0.20 - mJTotal switching energy Ets - 0.62 - mJ

Tvj�=�175°C,VCC�=�400V,�IC�=�10.0A,VGE�=�0.0/15.0V,RG(on)�=�49.0Ω,�RG(off)�=�49.0Ω,Lσ�=�30nH,�Cσ�=�32pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery.

Diode�Characteristic,�at�Tvj�=�175°C

Diode reverse recovery time trr - 157 - nsDiode reverse recovery charge Qrr - 631.00 - nC Diode peak reverse recovery current Irrm - 11.5 - ADiode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -109 - A/µs

Tvj�=�175°C,VR�=�400V,IF�=�10.0A,diF/dt�=�673A/µs

Datasheet 6 V�2.12020-09-28

IKD10N60RC2


Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�PO

WER

�DISSIPA

TION�[W

]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

Figure 2. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IC,�C

OLLEC

TOR�CURREN

T�[A]

25 50 75 100 125 150 1750

2

4

6

8

10

12

14

16

18

20

Figure 3. Typical�output�characteristic(Tvj=25°C)

VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

0 1 2 3 4 50

5

10

15

20

25

30VGE=20V

17V

15V

13V

11V

9V

7V

Figure 4. Typical�output�characteristic(Tvj=175°C)


IC,�C

OLLEC

TOR�CURREN

T�[A]

0 1 2 3 4 50

5

10

15

20

25

30VGE=20V

17V

15V

13V

11V

9V

7V

Datasheet 7 V�2.12020-09-28

IKD10N60RC2


Figure 5. Typical�transfer�characteristic(VCE=20V)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC,�C

OLLEC

TOR�CURREN

T�[A]

2 4 6 8 10 12 140

5

10

15

20

25

30Tj=25°CTj=175°C

Figure 6. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)

Tvj,�JUNCTION�TEMPERATURE�[°C]

VCEs

at,�C

OLLEC

TOR-EMITTE

R�SAT

URAT

ION�[V

]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5IC=5AIC=10AIC=20A

Figure 7. Typical�switching�times�as�a�function�ofcollector�current(inductive�load,�Tvj=175°C,�VCE=400V,VGE=15/0V,�RG=49Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

t,�SW

ITCHING�TIMES

�[ns]

4 6 8 10 12 14 16 18 201

10

100

1000td(off)tftd(on)tr

Figure 8. Typical�switching�times�as�a�function�of�gateresistor(inductive�load,�Tvj=175°C,�VCE=400V,VGE=15/0V,�IC=10A,�Dynamic�test�circuit�inFigure E)

RG,�GATE�RESISTOR�[Ω]

t,�SW

ITCHING�TIMES

�[ns]

0 10 20 30 40 50 60 70 801

10

100


Datasheet 8 V�2.12020-09-28

IKD10N60RC2


Figure 9. Typical�switching�times�as�a�function�ofjunction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=10A,�RG=49Ω,�Dynamic�test�circuit�inFigure E)


t,�SW

ITCHING�TIMES

�[ns]

25 50 75 100 125 150 1751

10

100


Figure 10. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.11mA)


VGE(th) ,�GAT

E-EM

ITTE

R�THRES

HOLD

�VOLT

AGE�[V]

25 50 75 100 125 1500

1

2

3

4

5

6typ.

Figure 11. Typical�switching�energy�losses�as�afunction�of�collector�current(inductive�load,�Tvj=175°C,�VCE=400V,VGE=15/0V,�RG=49Ω,�Dynamic�test�circuit�inFigure E)

IC,�COLLECTOR�CURRENT�[A]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

4 6 8 10 12 14 16 18 200.00

0.25

0.50

0.75

1.00

1.25

1.50EoffEonEts

Figure 12. Typical�switching�energy�losses�as�afunction�of�gate�resistor(inductive�load,�Tvj=175°C,�VCE=400V,VGE=15/0V,�IC=10A,�Dynamic�test�circuit�inFigure E)

RG,�GATE�RESISTOR�[Ω]

E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

0 10 20 30 40 50 60 70 800.0

0.2

0.4

0.6

0.8

1.0EoffEonEts

Datasheet 9 V�2.12020-09-28

IKD10N60RC2


Figure 13. Typical�switching�energy�losses�as�afunction�of�junction�temperature(inductive�load,�VCE=400V,�VGE=15/0V,IC=10A,�RG=49Ω,�Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7EoffEonEts

Figure 14. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(inductive�load,�Tvj=175°C,�VGE=15/0V,IC=10A,�RG=49Ω,�Dynamic�test�circuit�inFigure E)


E,�S

WITCHING�ENER

GY�LO

SSES

�[mJ]

200 250 300 350 400 450 5000.0

0.2

0.4

0.6

0.8

1.0EoffEonEts

Figure 15. Typical�gate�charge(IC=10A)

QGE,�GATE�CHARGE�[nC]

VGE ,�GAT

E-EM

ITTE

R�VOLT

AGE�[V]

0 10 20 30 40 500

2

4

6

8

10

12

14

16VCC�=�120VVCC�=�480V

Figure 16. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)


C,�C

APAC

ITAN

CE�[pF]

0 5 10 15 20 25 301

10

100

1000CiesCoesCres

Datasheet 10 V�2.12020-09-28

IKD10N60RC2


Figure 17. Typical�short�circuit�collector�current�as�afunction�of�gate-emitter�voltage(VCE≤400V,�Tvj≤150°C)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC(SC) ,�SH

ORT�CIRCUIT�COLLEC

TOR�CURREN

T�[A]

12 13 14 15 16 17 180

10

20

30

40

50

60

70

80

90

100

Figure 18. IGBT�transient�thermal�resistance(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�RES

ISTA

NCE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.010.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.205921.6E-4

21.37157.2E-4

30.255973.5E-3

40.019110.117109

58.5E-43.637676

Figure 19. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIEN

T�TH

ERMAL

�RES

ISTA

NCE�[K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.010.001

0.01

0.1

1

10

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.452925.6E-5

24.552.7E-4

31.039481.7E-3

40.0561470.04327206

58.7E-43.67377

Figure 20. Typical�reverse�recovery�time�as�a�functionof�diode�current�slope(VR=400V)

diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]

trr,�R

EVER

SE�REC

OVE

RY�TIME�[ns]

500 1000 1500 2000 2500 30000

25

50

75

100

125

150

175

200Tj=25°C, IF = 10ATj=175°C, IF = 10A

Datasheet 11 V�2.12020-09-28

IKD10N60RC2


Figure 21. Typical�reverse�recovery�charge�as�afunction�of�diode�current�slope(VR=400V)


Qrr ,�REV

ERSE

�REC

OVE

RY�CHAR

GE�[µC]

500 1000 1500 2000 2500 30000

100

200

300

400

500

600

700

800Tj=25°C, IF = 10ATj=175°C, IF = 10A

Figure 22. Typical�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)


Irr,�R

EVER

SE�REC

OVE

RY�CURREN

T�[A]

500 1000 1500 2000 2500 30000

5

10

15

20

25Tj=25°C, IF = 10ATj=175°C, IF = 10A

Figure 23. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)


dIrr /dt,�diode�peak�rate�of�fall�of�I

rr �[A/µs]

500 1000 1500 2000 2500 3000-600

-500

-400

-300

-200

-100

0Tj=25°C, IF = 10ATj=175°C, IF = 10A

Figure 24. Typical�diode�forward�current�as�a�functionof�forward�voltage

VF,�FORWARD�VOLTAGE�[V]

IF ,�FORWAR

D�CURREN

T�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

5

10

15

20

25

30Tj=25°CTj=175°C

Datasheet 12 V�2.12020-09-28

IKD10N60RC2


Figure 25. Typical�diode�forward�voltage�as�a�functionof�junction�temperature


VF ,�FO

RWAR

D�VOLT

AGE�[V]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5IF=5AIF=10AIF=20A

Datasheet 13 V�2.12020-09-28

IKD10N60RC2


2.5

REVISION

06

05-02-2016ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

0

2.5

DOCUMENT NO.

Z8B00003328MILLIMETERS

4.57 (BSC)2.29 (BSC)

L4

D

N

H

E1

e1

e

E

D1

L3

1.18

0.51

0.89

5.02

9.40

6.354.32

5.97

3

b3

A

DIM

b2

c

b

c2

A1

4,95

MIN2.16

0.64

0.46

0.65

0.40

0.00

1.78

1.02

5.21

5.846.22

6.73

1.27

10.48

5.50

MAX2.41

0.15

1.15

0.61

0.89

0.98

L

Package Drawing PG-TO252-3

Datasheet 14 V�2.12020-09-28

IKD10N60RC2


t

a b

td(off)

tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 15 V�2.12020-09-28

IKD10N60RC2


Revision�History

IKD10N60RC2

Revision:�2020-09-28,�Rev.�2.1Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2020-09-28 Final data sheet

Trademarks

All�referenced�product�or�service�names�and�trademarks�are�the�property�of�their�respective�owners.��

Published�byInfineon�Technologies�AG81726�München,�Germany©�Infineon�Technologies�AG�2020.All�Rights�Reserved.

Important�NoticeThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics(“Beschaffenheitsgarantie”).�With�respect�to�any�examples,�hints�or�any�typical�values�stated�herein�and/or�anyinformation�regarding�the�application�of�the�product,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�andliabilities�of�any�kind,�including�without�limitation�warranties�of�non-infringement�of�intellectual�property�rights�of�any�thirdparty.

In�addition,�any�information�given�in�this�document�is�subject�to�customer’s�compliance�with�its�obligations�stated�in�thisdocument�and�any�applicable�legal�requirements,�norms�and�standards�concerning�customer’s�products�and�any�use�ofthe�product�of�Infineon�Technologies�in�customer’s�applications.

The�data�contained�in�this�document�is�exclusively�intended�for�technically�trained�staff.�It�is�the�responsibility�ofcustomer’s�technical�departments�to�evaluate�the�suitability�of�the�product�for�the�intended�application�and�thecompleteness�of�the�product�information�given�in�this�document�with�respect�to�such�application.

For�further�information�on�the�product,�technology,�delivery�terms�and�conditions�and�prices�please�contact�your�nearestInfineon�Technologies�office�(www.infineon.com).

Please�note�that�this�product�is�not�qualified�according�to�the�AEC�Q100�or�AEC�Q101�documents�of�the�AutomotiveElectronics�Council.

WarningsDue�to�technical�requirements�products�may�contain�dangerous�substances.�For�information�on�the�types�in�questionplease�contact�your�nearest�Infineon�Technologies�office.

Except�as�otherwise�explicitly�approved�by�Infineon�Technologies�in�a�written�document�signed�by�authorizedrepresentatives�of�Infineon�Technologies,�Infineon�Technologies’�products�may�not�be�used�in�any�applications�where�afailure�of�the�product�or�any�consequences�of�the�use�thereof�can�reasonably�be�expected�to�result�in�personal�injury.

HeaddataTable of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

datasheet ikd10n60rc2 · 2021. 1. 20. · datasheet 3 v 2.1 2020-09-28 ikd10n60rc2 trenchstoptm...

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